JP6971931B2 - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
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- JP6971931B2 JP6971931B2 JP2018140858A JP2018140858A JP6971931B2 JP 6971931 B2 JP6971931 B2 JP 6971931B2 JP 2018140858 A JP2018140858 A JP 2018140858A JP 2018140858 A JP2018140858 A JP 2018140858A JP 6971931 B2 JP6971931 B2 JP 6971931B2
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- 239000004065 semiconductor Substances 0.000 title claims description 56
- 239000004020 conductor Substances 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 229910000679 solder Inorganic materials 0.000 description 18
- 239000000463 material Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L23/02—Containers; Seals
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- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inverter Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
しなしながら、パワー半導体装置の短絡保護発生時における信頼性を更に向上させることが求められている。
Claims (6)
- 低電位側電極と高電位側電極とセンス電極を有するパワー半導体素子と、
前記高電位側電極と電気的に繋がる高電位側導体と、
前記低電位側電極と電気的に繋がる低電位側導体と、
前記センス電極と電気的に繋がるセンス配線と、
前記センス配線を挟んで前記低電位側導体又は前記低電位側導体と対向する第1金属部と、を備え、
前記第1金属部は、前記センス配線と前記第1金属部の配列方向から見た場合、
前記センス配線は、前記高電位側導体または前記低電位側導体と対向する対向部を有し、
前記第1金属部は、前記対向部と重なる部分に凹部を形成し、
前記凹部の深さは、当該凹部の底部と前記センス配線の距離が当該センス配線と前記高電位側導体または前記低電位側導体との距離よりも大きくなるように形成されるパワー半導体装置。 - 請求項1にパワー半導体装置であって、
前記第1金属部の前記凹部の幅が、前記センス配線の幅よりも大きくなるように形成されるパワー半導体装置。 - 請求項1または2に記載のパワー半導体装置であって、
前記センス配線と前記低電位側電極を挟んで前記第1金属部と互いに対向する第2金属部を備えたパワー半導体装置。 - 請求項3に記載のパワー半導体装置であって、
前記第2金属部は、前記センス配線の前記対向部と重なる部分に凹部を形成し、
前記凹部の深さは、当該凹部の底面と前記センス配線の距離が当該センス配線と前記低電位側導体の距離よりも大きくなるように形成されるパワー半導体装置。 - 請求項4に記載のパワー半導体装置であって、
前記第2金属部の前記凹部の幅が、前記センス配線の幅よりも大きくなるように形成されるパワー半導体装置。 - 請求項1ないし5に記載のいずれかのパワー半導体装置であって、
前記センス配線は、負極センス配線により構成され、
前記負極センス配線とは異なる正極センス配線を備え、
前記センス配線と前記第1金属部の配列方向から見た場合、
前記負極センス配線は、前記凹部と重なり、
前記正極センス配線は凹部に重ならないように設けられるパワー半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018140858A JP6971931B2 (ja) | 2018-07-27 | 2018-07-27 | パワー半導体装置 |
PCT/JP2019/027447 WO2020022074A1 (ja) | 2018-07-27 | 2019-07-11 | パワー半導体装置 |
DE112019003258.5T DE112019003258T5 (de) | 2018-07-27 | 2019-07-11 | Leistungshalbleitervorrichtung |
CN201980047905.5A CN112567619B (zh) | 2018-07-27 | 2019-07-11 | 功率半导体装置 |
US17/262,916 US11848245B2 (en) | 2018-07-27 | 2019-07-11 | Power semiconductor apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018140858A JP6971931B2 (ja) | 2018-07-27 | 2018-07-27 | パワー半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2020018137A JP2020018137A (ja) | 2020-01-30 |
JP6971931B2 true JP6971931B2 (ja) | 2021-11-24 |
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JP2018140858A Active JP6971931B2 (ja) | 2018-07-27 | 2018-07-27 | パワー半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11848245B2 (ja) |
JP (1) | JP6971931B2 (ja) |
DE (1) | DE112019003258T5 (ja) |
WO (1) | WO2020022074A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023044542A (ja) * | 2021-09-17 | 2023-03-30 | 株式会社 日立パワーデバイス | パワー半導体モジュールおよび電力変換装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013038848A (ja) * | 2011-08-04 | 2013-02-21 | Honda Motor Co Ltd | 半導体装置 |
JP2013258387A (ja) * | 2012-05-15 | 2013-12-26 | Rohm Co Ltd | パワーモジュール半導体装置 |
JP6065744B2 (ja) * | 2013-05-20 | 2017-01-25 | 株式会社デンソー | 半導体モジュール |
JP6215151B2 (ja) * | 2014-08-01 | 2017-10-18 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
-
2018
- 2018-07-27 JP JP2018140858A patent/JP6971931B2/ja active Active
-
2019
- 2019-07-11 WO PCT/JP2019/027447 patent/WO2020022074A1/ja active Application Filing
- 2019-07-11 US US17/262,916 patent/US11848245B2/en active Active
- 2019-07-11 DE DE112019003258.5T patent/DE112019003258T5/de active Pending
Also Published As
Publication number | Publication date |
---|---|
DE112019003258T5 (de) | 2021-03-11 |
US11848245B2 (en) | 2023-12-19 |
WO2020022074A1 (ja) | 2020-01-30 |
US20210280483A1 (en) | 2021-09-09 |
JP2020018137A (ja) | 2020-01-30 |
CN112567619A (zh) | 2021-03-26 |
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