JP4775327B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JP4775327B2 JP4775327B2 JP2007150425A JP2007150425A JP4775327B2 JP 4775327 B2 JP4775327 B2 JP 4775327B2 JP 2007150425 A JP2007150425 A JP 2007150425A JP 2007150425 A JP2007150425 A JP 2007150425A JP 4775327 B2 JP4775327 B2 JP 4775327B2
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- semiconductor device
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- manufacturing
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- Engineering & Computer Science (AREA)
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Description
2 コレクタ銅箔
3 エミッタ銅箔
4 IGBTチップ
6 FWDチップ
8〜11、24 はんだ
12 裏面銅箔
15、28 レーザ光
16 リードフレーム
17、29、30 貫通孔
18、18a、20、20a、22、22a、33〜35 金属ブロック
19、21、23、36〜38 凸部
25〜27、25a〜27a、25b〜27b、41〜43 レーザ溶接部
Claims (6)
- 半導体チップ上に放熱用の金属ブロックが配置され、該金属ブロック上に配線用の金属板が配置される半導体装置の製造方法において、前記金属ブロックの上面に凸部が形成され、前記金属板に貫通孔が形成され、該貫通孔と前記凸部を嵌合し、前記凸部の表面に焦点が合うレーザ光を前記凸部の表面に照射し、該凸部を溶融し、該凸部と前記貫通孔の側壁をレーザ溶接することを特徴とする半導体装置の製造方法。
- 半導体チップ上に放熱用の金属ブロックが配置され、該金属ブロック上に配線用の金属板が配置される半導体装置の製造方法において、前記金属ブロックの上面に凸部が形成され、前記金属板に貫通孔が形成され、該貫通孔と前記凸部を嵌合し、前記凸部の表面から焦点位置を上方にずらしたレーザ光を前記凸部と前記貫通孔の周囲の表面に照射し、前記凸部と前記貫通孔の周囲を溶融し、前記凸部と前記貫通孔の側壁をレーザ溶接することを特徴とする半導体装置の製造方法。
- 前記凸部の高さが、前記貫通孔の深さの50%以上で、前記貫通孔上部より飛び出る量が2mm以下であることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記凸部と前記貫通孔の側壁との隙間が100μm以上で、500μm以下であることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記金属ブロックおよび前記金属板の材質が、銅、銅合金およびアルミニウ ムのいずれかであることを特徴とする請求項1または2に記載の半導体装置の製造方法 。
- 前記レーザ光の波長が、532nm〜1064nmであることを特徴とする請求項1または2に記載の半導体装置の製造方法。
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JP2007150425A JP4775327B2 (ja) | 2007-06-06 | 2007-06-06 | 半導体装置の製造方法 |
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JP5633581B2 (ja) * | 2011-01-07 | 2014-12-03 | 富士電機株式会社 | 半導体装置およびその製造方法 |
DE102011088418B4 (de) | 2011-12-13 | 2023-06-22 | Robert Bosch Gmbh | Bondverbindung |
DE102012222791A1 (de) * | 2012-12-11 | 2014-06-12 | Robert Bosch Gmbh | Verfahren zur Kontaktierung eines Halbleiters und Halbleiterbauelement mit erhöhter Stabilität gegenüber thermomechanischen Einflüssen |
US10217690B2 (en) * | 2015-11-30 | 2019-02-26 | Kabushiki Kaisha Toshiba | Semiconductor module that have multiple paths for heat dissipation |
JP2017168596A (ja) * | 2016-03-15 | 2017-09-21 | 株式会社東芝 | 半導体装置 |
JP6945418B2 (ja) | 2017-10-24 | 2021-10-06 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN113491010B (zh) * | 2019-03-05 | 2024-05-03 | 罗姆股份有限公司 | 半导体装置以及接合方法 |
JP2021144984A (ja) * | 2020-03-10 | 2021-09-24 | 富士電機株式会社 | 製造方法、製造装置、治具アセンブリ、半導体モジュールおよび車両 |
JP7491071B2 (ja) | 2020-06-08 | 2024-05-28 | スズキ株式会社 | レーザスポット溶接方法 |
EP4080563A1 (de) * | 2021-04-22 | 2022-10-26 | Siemens Aktiengesellschaft | Auf einen schaltungsträger aufbringbares schaltungselement, elektrischer verbinder sowie verfahren zum herstellen einer elektrischen verbindung |
WO2024101202A1 (ja) * | 2022-11-09 | 2024-05-16 | 三菱電機株式会社 | 半導体装置、電力変換装置、および、半導体装置の製造方法 |
JP2024077805A (ja) | 2022-11-29 | 2024-06-10 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
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JPS58107291A (ja) * | 1981-12-18 | 1983-06-25 | Fujitsu Ltd | レ−ザ−溶接方法 |
JPH11144774A (ja) * | 1997-11-10 | 1999-05-28 | Harness Syst Tech Res Ltd | レーザ溶接構造 |
JP2000307058A (ja) * | 1999-04-19 | 2000-11-02 | Mitsubishi Electric Corp | パワー半導体モジュール |
JP2001071162A (ja) * | 1999-09-09 | 2001-03-21 | Fuji Xerox Co Ltd | 鋼板のレーザ溶接方法 |
JP3739091B2 (ja) * | 2003-04-03 | 2006-01-25 | 株式会社東芝 | 半導体装置の製造方法 |
JP2006140403A (ja) * | 2004-11-15 | 2006-06-01 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法および製造装置 |
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