CN106664011A - 电压产生电路 - Google Patents
电压产生电路 Download PDFInfo
- Publication number
- CN106664011A CN106664011A CN201480081451.0A CN201480081451A CN106664011A CN 106664011 A CN106664011 A CN 106664011A CN 201480081451 A CN201480081451 A CN 201480081451A CN 106664011 A CN106664011 A CN 106664011A
- Authority
- CN
- China
- Prior art keywords
- signal
- voltage
- circuit
- mark
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2014/072282 WO2016030962A1 (ja) | 2014-08-26 | 2014-08-26 | 電圧発生回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106664011A true CN106664011A (zh) | 2017-05-10 |
CN106664011B CN106664011B (zh) | 2019-06-11 |
Family
ID=55398906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480081451.0A Active CN106664011B (zh) | 2014-08-26 | 2014-08-26 | 电压产生电路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9985519B2 (zh) |
CN (1) | CN106664011B (zh) |
SG (1) | SG11201701477QA (zh) |
WO (1) | WO2016030962A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107992151A (zh) * | 2017-12-12 | 2018-05-04 | 鄂尔多斯市源盛光电有限责任公司 | 电压控制电路及其方法、面板和显示装置 |
CN109842292A (zh) * | 2017-11-24 | 2019-06-04 | 北京兆易创新科技股份有限公司 | 一种电荷泵电路及nor flash |
CN112037828A (zh) * | 2020-11-09 | 2020-12-04 | 深圳市芯天下技术有限公司 | 电荷泵输出电压稳定检测方法、电路及非易失型存储器 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107294376B (zh) * | 2016-03-30 | 2020-08-07 | 中芯国际集成电路制造(上海)有限公司 | 电荷泵稳压器及存储器、物联网设备 |
KR102548611B1 (ko) | 2018-09-21 | 2023-06-28 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 전압 검출 시스템 |
CN108877696B (zh) * | 2018-09-28 | 2020-05-01 | 京东方科技集团股份有限公司 | 像素电路及其驱动方法、显示面板及显示装置 |
CN109272962B (zh) * | 2018-11-16 | 2021-04-27 | 京东方科技集团股份有限公司 | 像素内存储单元、像素内数据存储方法以及像素阵列 |
KR102611781B1 (ko) * | 2019-06-19 | 2023-12-08 | 에스케이하이닉스 주식회사 | 차지 펌프 회로를 포함하는 반도체 장치 |
IT202100002798A1 (it) * | 2021-02-09 | 2022-08-09 | St Microelectronics Srl | Circuito regolatore, sistema e procedimento corrispondenti |
KR20230020797A (ko) | 2021-08-04 | 2023-02-13 | 에스케이하이닉스 주식회사 | 차지 펌프 회로를 포함하는 반도체 장치 |
CN116382409B (zh) * | 2023-06-06 | 2023-08-15 | 上海灵动微电子股份有限公司 | 一种线性稳压电路系统及其控制方法 |
Citations (7)
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US20050168263A1 (en) * | 2003-12-25 | 2005-08-04 | Kabushiki Kaisha Toshiba | Semiconductor device and driving method of semiconductor device |
CN1700572A (zh) * | 2004-05-21 | 2005-11-23 | 罗姆股份有限公司 | 具备调整功能的电源装置 |
US20060012354A1 (en) * | 2004-07-13 | 2006-01-19 | Fujitsu Limited | Step-down circuit |
JP2006054959A (ja) * | 2004-08-11 | 2006-02-23 | Sony Corp | 電圧変換回路 |
US20060146583A1 (en) * | 2003-03-27 | 2006-07-06 | Device Engineering Co., Ltd. | Stabilized power supply circuit |
CN1893245A (zh) * | 2005-07-05 | 2007-01-10 | 恩益禧电子股份有限公司 | 包括具不同放电时间常数的电荷泵型升压电路的电源设备 |
JP2011253217A (ja) * | 2010-05-31 | 2011-12-15 | Renesas Electronics Corp | 電源装置及び液晶パネルドライバic |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3705842B2 (ja) | 1994-08-04 | 2005-10-12 | 株式会社ルネサステクノロジ | 半導体装置 |
US6617832B1 (en) * | 2002-06-03 | 2003-09-09 | Texas Instruments Incorporated | Low ripple scalable DC-to-DC converter circuit |
JP3733122B2 (ja) * | 2003-03-27 | 2006-01-11 | 株式会社ディーブイイー | 安定化電源回路 |
JP4181441B2 (ja) * | 2003-04-14 | 2008-11-12 | 株式会社リコー | Dc−dcコンバータ |
JP4717458B2 (ja) * | 2004-03-30 | 2011-07-06 | ローム株式会社 | 電圧生成装置 |
KR100748553B1 (ko) | 2004-12-20 | 2007-08-10 | 삼성전자주식회사 | 리플-프리 고전압 발생회로 및 방법, 그리고 이를 구비한반도체 메모리 장치 |
KR100680441B1 (ko) | 2005-06-07 | 2007-02-08 | 주식회사 하이닉스반도체 | 안정적인 승압 전압을 발생하는 승압 전압 발생기 |
US7710193B2 (en) | 2005-09-29 | 2010-05-04 | Hynix Semiconductor, Inc. | High voltage generator and word line driving high voltage generator of memory device |
KR100764740B1 (ko) | 2006-05-16 | 2007-10-08 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 위한 고전압 발생회로 |
KR100733953B1 (ko) | 2006-06-15 | 2007-06-29 | 삼성전자주식회사 | 플래시 메모리 장치의 전압 레귤레이터 |
JP4855153B2 (ja) | 2006-06-16 | 2012-01-18 | ローム株式会社 | 電源装置、レギュレータ回路、チャージポンプ回路およびそれらを用いた電子機器 |
KR100809071B1 (ko) | 2006-09-25 | 2008-03-03 | 삼성전자주식회사 | 고전압 발생 회로를 구비하는 반도체 장치 및 그 전압 발생방법 |
JP2008086165A (ja) | 2006-09-28 | 2008-04-10 | Toshiba Corp | 電源装置 |
TWI357543B (en) * | 2008-03-24 | 2012-02-01 | Novatek Microelectronics Corp | Apparatus of dynamic feed-back control charge pump |
JP5072731B2 (ja) | 2008-06-23 | 2012-11-14 | 株式会社東芝 | 定電圧昇圧電源 |
KR101511160B1 (ko) | 2009-01-06 | 2015-04-13 | 삼성전자주식회사 | 차지 펌프 회로 및 이를 이용한 전압 변환 장치 |
KR101080208B1 (ko) | 2010-09-30 | 2011-11-07 | 주식회사 하이닉스반도체 | 내부전압 발생회로 및 그를 이용한 반도체 장치 |
JP5087670B2 (ja) | 2010-11-01 | 2012-12-05 | 株式会社東芝 | 電圧発生回路 |
US9154027B2 (en) * | 2013-12-09 | 2015-10-06 | Sandisk Technologies Inc. | Dynamic load matching charge pump for reduced current consumption |
-
2014
- 2014-08-26 CN CN201480081451.0A patent/CN106664011B/zh active Active
- 2014-08-26 WO PCT/JP2014/072282 patent/WO2016030962A1/ja active Application Filing
- 2014-08-26 SG SG11201701477QA patent/SG11201701477QA/en unknown
-
2017
- 2017-02-23 US US15/440,255 patent/US9985519B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060146583A1 (en) * | 2003-03-27 | 2006-07-06 | Device Engineering Co., Ltd. | Stabilized power supply circuit |
US20050168263A1 (en) * | 2003-12-25 | 2005-08-04 | Kabushiki Kaisha Toshiba | Semiconductor device and driving method of semiconductor device |
CN1700572A (zh) * | 2004-05-21 | 2005-11-23 | 罗姆股份有限公司 | 具备调整功能的电源装置 |
US20060012354A1 (en) * | 2004-07-13 | 2006-01-19 | Fujitsu Limited | Step-down circuit |
JP2006054959A (ja) * | 2004-08-11 | 2006-02-23 | Sony Corp | 電圧変換回路 |
CN1893245A (zh) * | 2005-07-05 | 2007-01-10 | 恩益禧电子股份有限公司 | 包括具不同放电时间常数的电荷泵型升压电路的电源设备 |
JP2011253217A (ja) * | 2010-05-31 | 2011-12-15 | Renesas Electronics Corp | 電源装置及び液晶パネルドライバic |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109842292A (zh) * | 2017-11-24 | 2019-06-04 | 北京兆易创新科技股份有限公司 | 一种电荷泵电路及nor flash |
CN107992151A (zh) * | 2017-12-12 | 2018-05-04 | 鄂尔多斯市源盛光电有限责任公司 | 电压控制电路及其方法、面板和显示装置 |
CN112037828A (zh) * | 2020-11-09 | 2020-12-04 | 深圳市芯天下技术有限公司 | 电荷泵输出电压稳定检测方法、电路及非易失型存储器 |
Also Published As
Publication number | Publication date |
---|---|
US9985519B2 (en) | 2018-05-29 |
US20170163146A1 (en) | 2017-06-08 |
SG11201701477QA (en) | 2017-03-30 |
CN106664011B (zh) | 2019-06-11 |
WO2016030962A1 (ja) | 2016-03-03 |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
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TA01 | Transfer of patent application right |
Effective date of registration: 20170720 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220112 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right |