SG11201701477QA - Voltage generation circuit - Google Patents
Voltage generation circuitInfo
- Publication number
- SG11201701477QA SG11201701477QA SG11201701477QA SG11201701477QA SG11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA
- Authority
- SG
- Singapore
- Prior art keywords
- generation circuit
- voltage generation
- voltage
- circuit
- generation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2014/072282 WO2016030962A1 (en) | 2014-08-26 | 2014-08-26 | Voltage generation circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201701477QA true SG11201701477QA (en) | 2017-03-30 |
Family
ID=55398906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201701477QA SG11201701477QA (en) | 2014-08-26 | 2014-08-26 | Voltage generation circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US9985519B2 (en) |
CN (1) | CN106664011B (en) |
SG (1) | SG11201701477QA (en) |
WO (1) | WO2016030962A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107294376B (en) * | 2016-03-30 | 2020-08-07 | 中芯国际集成电路制造(上海)有限公司 | Charge pump voltage stabilizer, memory and Internet of things equipment |
CN109842292A (en) * | 2017-11-24 | 2019-06-04 | 北京兆易创新科技股份有限公司 | A kind of charge pump circuit and NOR FLASH |
CN107992151B (en) * | 2017-12-12 | 2020-07-31 | 鄂尔多斯市源盛光电有限责任公司 | Voltage control circuit and method thereof, panel and display device |
CN109313225B (en) * | 2018-09-21 | 2019-10-01 | 长江存储科技有限责任公司 | Voltage detecting system |
CN108877696B (en) * | 2018-09-28 | 2020-05-01 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, display panel and display device |
CN109272962B (en) * | 2018-11-16 | 2021-04-27 | 京东方科技集团股份有限公司 | In-pixel storage unit, in-pixel data storage method and pixel array |
KR102611781B1 (en) * | 2019-06-19 | 2023-12-08 | 에스케이하이닉스 주식회사 | Semiconductor device including charge pump circuit |
CN112037828A (en) * | 2020-11-09 | 2020-12-04 | 深圳市芯天下技术有限公司 | Charge pump output voltage stability detection method, circuit and nonvolatile memory |
IT202100002798A1 (en) * | 2021-02-09 | 2022-08-09 | St Microelectronics Srl | REGULATOR CIRCUIT, CORRESPONDING SYSTEM AND PROCEDURE |
CN116382409B (en) * | 2023-06-06 | 2023-08-15 | 上海灵动微电子股份有限公司 | Linear voltage stabilizing circuit system and control method thereof |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3705842B2 (en) | 1994-08-04 | 2005-10-12 | 株式会社ルネサステクノロジ | Semiconductor device |
US6617832B1 (en) * | 2002-06-03 | 2003-09-09 | Texas Instruments Incorporated | Low ripple scalable DC-to-DC converter circuit |
JP3733122B2 (en) * | 2003-03-27 | 2006-01-11 | 株式会社ディーブイイー | Stabilized power circuit |
US7142040B2 (en) * | 2003-03-27 | 2006-11-28 | Device Engineering Co., Ltd. | Stabilized power supply circuit |
JP4181441B2 (en) * | 2003-04-14 | 2008-11-12 | 株式会社リコー | DC-DC converter |
JP4257196B2 (en) * | 2003-12-25 | 2009-04-22 | 株式会社東芝 | Semiconductor device and driving method of semiconductor device |
JP4717458B2 (en) * | 2004-03-30 | 2011-07-06 | ローム株式会社 | Voltage generator |
JP4704099B2 (en) | 2004-05-21 | 2011-06-15 | ローム株式会社 | Power supply device and electronic device using the same |
JP4199706B2 (en) * | 2004-07-13 | 2008-12-17 | 富士通マイクロエレクトロニクス株式会社 | Buck circuit |
JP2006054959A (en) * | 2004-08-11 | 2006-02-23 | Sony Corp | Voltage conversion circuit |
KR100748553B1 (en) | 2004-12-20 | 2007-08-10 | 삼성전자주식회사 | Apparatus and method for generating ripple-free high voltage and semiconductor memory device having the same |
KR100680441B1 (en) | 2005-06-07 | 2007-02-08 | 주식회사 하이닉스반도체 | VPP voltage generator for generating stable VPP voltage |
JP4791094B2 (en) * | 2005-07-05 | 2011-10-12 | ルネサスエレクトロニクス株式会社 | Power circuit |
US7710193B2 (en) | 2005-09-29 | 2010-05-04 | Hynix Semiconductor, Inc. | High voltage generator and word line driving high voltage generator of memory device |
KR100764740B1 (en) | 2006-05-16 | 2007-10-08 | 삼성전자주식회사 | Flash memory device and high voltage generator for the same |
KR100733953B1 (en) | 2006-06-15 | 2007-06-29 | 삼성전자주식회사 | Voltage regulator for flash memory device |
JP4855153B2 (en) | 2006-06-16 | 2012-01-18 | ローム株式会社 | POWER SUPPLY DEVICE, REGULATOR CIRCUIT, CHARGE PUMP CIRCUIT AND ELECTRONIC DEVICE USING THEM |
KR100809071B1 (en) | 2006-09-25 | 2008-03-03 | 삼성전자주식회사 | Semiconductor device having high voltage generation circuit and method there-of |
JP2008086165A (en) | 2006-09-28 | 2008-04-10 | Toshiba Corp | Power supply unit |
TWI357543B (en) * | 2008-03-24 | 2012-02-01 | Novatek Microelectronics Corp | Apparatus of dynamic feed-back control charge pump |
JP5072731B2 (en) | 2008-06-23 | 2012-11-14 | 株式会社東芝 | Constant voltage boost power supply |
KR101511160B1 (en) | 2009-01-06 | 2015-04-13 | 삼성전자주식회사 | Charge pump circuit and voltage converting apparatus using the same |
JP2011253217A (en) * | 2010-05-31 | 2011-12-15 | Renesas Electronics Corp | Power supply device and liquid crystal panel driver ic |
KR101080208B1 (en) | 2010-09-30 | 2011-11-07 | 주식회사 하이닉스반도체 | Internal voltage generator and semiconductor apparatus using the same |
JP5087670B2 (en) | 2010-11-01 | 2012-12-05 | 株式会社東芝 | Voltage generation circuit |
US9154027B2 (en) * | 2013-12-09 | 2015-10-06 | Sandisk Technologies Inc. | Dynamic load matching charge pump for reduced current consumption |
-
2014
- 2014-08-26 SG SG11201701477QA patent/SG11201701477QA/en unknown
- 2014-08-26 CN CN201480081451.0A patent/CN106664011B/en active Active
- 2014-08-26 WO PCT/JP2014/072282 patent/WO2016030962A1/en active Application Filing
-
2017
- 2017-02-23 US US15/440,255 patent/US9985519B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170163146A1 (en) | 2017-06-08 |
WO2016030962A1 (en) | 2016-03-03 |
CN106664011A (en) | 2017-05-10 |
US9985519B2 (en) | 2018-05-29 |
CN106664011B (en) | 2019-06-11 |
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