CN106531709B - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
- Publication number
- CN106531709B CN106531709B CN201610239696.2A CN201610239696A CN106531709B CN 106531709 B CN106531709 B CN 106531709B CN 201610239696 A CN201610239696 A CN 201610239696A CN 106531709 B CN106531709 B CN 106531709B
- Authority
- CN
- China
- Prior art keywords
- lead
- signal
- power supply
- signal lead
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 25
- 229920005989 resin Polymers 0.000 claims abstract description 25
- 238000007789 sealing Methods 0.000 claims abstract description 24
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000011049 filling Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- -1 copper Chemical compound 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910188128.8A CN110034086B (zh) | 2015-09-15 | 2016-04-18 | 引线架 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015181478A JP6352876B2 (ja) | 2015-09-15 | 2015-09-15 | 半導体装置の製造方法 |
JP2015-181478 | 2015-09-15 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910188128.8A Division CN110034086B (zh) | 2015-09-15 | 2016-04-18 | 引线架 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106531709A CN106531709A (zh) | 2017-03-22 |
CN106531709B true CN106531709B (zh) | 2019-04-05 |
Family
ID=58358048
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610239696.2A Active CN106531709B (zh) | 2015-09-15 | 2016-04-18 | 半导体装置的制造方法 |
CN201910188128.8A Active CN110034086B (zh) | 2015-09-15 | 2016-04-18 | 引线架 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910188128.8A Active CN110034086B (zh) | 2015-09-15 | 2016-04-18 | 引线架 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6352876B2 (zh) |
CN (2) | CN106531709B (zh) |
TW (1) | TWI581349B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1213175A (zh) * | 1997-09-29 | 1999-04-07 | 株式会社日立制作所 | 半导体器件及其制造方法 |
CN101312176A (zh) * | 2007-05-25 | 2008-11-26 | 富士通株式会社 | 半导体器件、引线框以及半导体器件的安装结构 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4916519A (en) * | 1989-05-30 | 1990-04-10 | International Business Machines Corporation | Semiconductor package |
JPH0750764B2 (ja) * | 1989-07-05 | 1995-05-31 | 株式会社三井ハイテック | リードフレームの製造方法 |
JP2504232B2 (ja) * | 1989-11-09 | 1996-06-05 | 日本電気株式会社 | 半導体装置用リ―ドフレ―ム |
JP3119544B2 (ja) * | 1992-07-08 | 2000-12-25 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路装置 |
JPH0714976A (ja) * | 1993-06-24 | 1995-01-17 | Shinko Electric Ind Co Ltd | リードフレーム及び半導体装置 |
JPH07307428A (ja) * | 1994-05-11 | 1995-11-21 | Toppan Printing Co Ltd | リードフレーム |
JPH08148634A (ja) * | 1994-11-21 | 1996-06-07 | Hitachi Ltd | リードフレームならびにそれを用いた半導体装置およびその製造方法 |
JPH08162585A (ja) * | 1994-12-06 | 1996-06-21 | Hitachi Constr Mach Co Ltd | リードフレームの加工方法及びリードフレーム並びに半導体装置 |
JPH1140721A (ja) * | 1997-07-15 | 1999-02-12 | Matsushita Electron Corp | リードフレーム、半導体装置およびそれらの製造方法 |
US6515359B1 (en) * | 1998-01-20 | 2003-02-04 | Micron Technology, Inc. | Lead frame decoupling capacitor semiconductor device packages including the same and methods |
JPH11340405A (ja) * | 1998-05-22 | 1999-12-10 | Fujitsu Quantum Devices Kk | リードフレーム、半導体装置およびその製造方法 |
KR100369393B1 (ko) * | 2001-03-27 | 2003-02-05 | 앰코 테크놀로지 코리아 주식회사 | 리드프레임 및 이를 이용한 반도체패키지와 그 제조 방법 |
US6812580B1 (en) * | 2003-06-09 | 2004-11-02 | Freescale Semiconductor, Inc. | Semiconductor package having optimized wire bond positioning |
JP4489100B2 (ja) * | 2007-06-18 | 2010-06-23 | 株式会社東芝 | 半導体パッケージ |
TW201019450A (en) * | 2008-11-04 | 2010-05-16 | Powertech Technology Inc | Inner-connecting structure of lead frame and its connecting method |
US7875963B1 (en) * | 2008-11-21 | 2011-01-25 | Amkor Technology, Inc. | Semiconductor device including leadframe having power bars and increased I/O |
JP2013016666A (ja) * | 2011-07-05 | 2013-01-24 | Renesas Electronics Corp | 半導体装置 |
-
2015
- 2015-09-15 JP JP2015181478A patent/JP6352876B2/ja active Active
-
2016
- 2016-03-02 TW TW105106357A patent/TWI581349B/zh active
- 2016-04-18 CN CN201610239696.2A patent/CN106531709B/zh active Active
- 2016-04-18 CN CN201910188128.8A patent/CN110034086B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1213175A (zh) * | 1997-09-29 | 1999-04-07 | 株式会社日立制作所 | 半导体器件及其制造方法 |
CN101312176A (zh) * | 2007-05-25 | 2008-11-26 | 富士通株式会社 | 半导体器件、引线框以及半导体器件的安装结构 |
Also Published As
Publication number | Publication date |
---|---|
CN110034086A (zh) | 2019-07-19 |
TW201711115A (zh) | 2017-03-16 |
TWI581349B (zh) | 2017-05-01 |
JP6352876B2 (ja) | 2018-07-04 |
CN110034086B (zh) | 2024-03-01 |
CN106531709A (zh) | 2017-03-22 |
JP2017059613A (ja) | 2017-03-23 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170808 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220210 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |