CN106505045A - 具有可路由囊封的传导衬底的半导体封装及方法 - Google Patents

具有可路由囊封的传导衬底的半导体封装及方法 Download PDF

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Publication number
CN106505045A
CN106505045A CN201610571284.9A CN201610571284A CN106505045A CN 106505045 A CN106505045 A CN 106505045A CN 201610571284 A CN201610571284 A CN 201610571284A CN 106505045 A CN106505045 A CN 106505045A
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resin bed
trim layer
conductive pattern
conductive
encapsulated
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CN201610571284.9A
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CN106505045B (zh
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班文贝
金本吉
金锦雄
权杰督
江详烨
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Anrely Technology Singapore Holdings Pte Ltd
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Imark Technology Co
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Abstract

一种具有可路由囊封的传导衬底的半导体封装及方法。在一个实施例中，所述可路由的模制引线框架结构包含第一层压层，所述第一层压层包含所述表面修整层、连接到所述表面修整层的导通孔，及覆盖所述导通孔从而使所述表面修整层的顶部表面暴露的第一树脂层。第二层压层包含连接到所述导通孔的第二传导图案、连接到所述第二传导图案的凸块垫，及覆盖所述第一树脂层的一个侧、所述第二传导图案及所述凸块垫的第二树脂层。半导体裸片电连接到所述表面修整层，且囊封物覆盖所述半导体裸片及所述第一树脂层的另一侧。所述表面修整层提供用于将所述半导体裸片连接到所述可路由的模制引线框架结构的可定制且经改进的接合结构。

Description

具有可路由囊封的传导衬底的半导体封装及方法
技术领域
本发明涉及电子元件，并且更具体地说，涉及具有可路由囊封的传导衬底的半导体封装及方法。
背景技术
一般来说，半导体封装经设计以保护集成电路或芯片免于物理损害及外部应力。并且，半导体封装可提供热导路径以有效地移除半导体芯片中产生的热，且可进一步将电连接提供到其它组件，例如印刷电路板。用于半导体封装的材料通常包含陶瓷及/或塑料，且封装技术已从陶瓷扁平封装及双列直插式封装发展为引脚栅阵列及无引线芯片载体封装，以及其它封装。由于对小型化和较高性能的经封装半导体装置的持续需求，需要较精细节距的传导衬底；尤其是支持各种外部互连结构的传导衬底。
相应地，希望具有形成包含可路由囊封的传导衬底结构的经封装半导体装置的结构和方法，所述结构例如可路由的微引线框架结构，其支持对小型化和较高性能电子装置的需求。还希望在完成经封装半导体装置的组装之前制造可路由囊封的传导衬底结构或其部分以缩减制造周期时间。另外，使所述结构及方法支持多个外部互连结构将更为有益。另外，还希望使所述结构及方法容易地并入到制造流程中并且使两者具成本效益。
发明内容
本发明包含一种经封装半导体装置及其制造方法，以及其它特征，所述经封装半导体装置包含具有传导表面修整层的可路由囊封的传导衬底(例如，可路由的模制引线框架)。更具体地说，本文中所描述的实施例促进封装级传导图案的有效路由且在表面修整层与半导体裸片之间提供增强的连接可靠性。对于可路由囊封的传导衬底的一个实施例，表面修整层可在制造过程的初始阶段形成。在可路由囊封的传导衬底的另一实施例中，表面修整层既可在制造过程的初始阶段又可在最后阶段形成。
在一些实施例中，传导球在表面修整层于制造过程的初始阶段形成时直接形成于不具有表面修整层的凸块垫上、连接到所述凸块垫或毗邻所述凸块垫以提供球栅阵列封装。另外，当表面修整层于可路由囊封的传导衬底的制造过程的初始及最后阶段中各个阶段形成时，形成于最后阶段的表面修整层可用作输入/输出终端以提供栅格阵列封装。
在一些优选实施例中，用于形成可路由的模制引线框架的第一树脂层及第二树脂层的材料以及用于形成囊封半导体裸片的封装体的材料为相同的，或具有相似的热膨胀系数以及其它相似材料属性，进而在装置的制造过程或操作期间有效地抑制翘曲。
更具体地说，在一个实施例中，一种半导体装置包括第一层压层，所述第一层压层包含：第一表面修整层；第一传导图案，其包括连接到第一表面修整层的第一部分及与第一表面修整层侧向隔开的第二部分；传导导通孔，其连接到第一传导图案；及第一树脂层，其覆盖第一传导图案、传导导通孔，及第一表面修整层的一部分，其中第一表面修整层暴露于第一树脂层的第一表面中且传导导通孔暴露于第一树脂层的第二表面中。第二层压层邻近于第一层压层而安置，且包含连接到传导导通孔的第二传导图案、连接到第二传导图案的传导垫，及覆盖第一树脂层、第二传导图案及传导垫的至少一部分的第二树脂层，其中传导垫暴露于第二树脂层的第一表面中。半导体裸片电连接到第一表面修整层，囊封物覆盖第一层压层及半导体裸片的至少一部分。
在另一实施例中，一种经封装半导体装置包含可路由囊封的传导衬底，其包括囊封在第一树脂层内的第一传导结构、电耦合到第一传导结构且囊封在第二树脂层内的第二传导结构，及安置在第一传导结构的至少部分上的第一表面修整层。第一表面修整层暴露于第一树脂层中且第二传导结构的至少部分暴露于第二树脂层中。半导体裸片电连接到第一表面修整层，囊封物囊封半导体裸片及第一表面修整层。
在另一实施例中，制造半导体装置的方法包含提供可路由囊封的传导衬底，可路由囊封的传导衬底包括囊封在第一树脂层内的第一传导结构、电耦合到第一传导结构且囊封在第二树脂层内的第二传导结构，及安置在第一传导结构的至少部分上的第一表面修整层，其中第一表面修整层暴露在第一树脂层中且第二传导结构的至少部分暴露在第二树脂层中。所述方法包含将半导体裸片电连接到第一表面修整层，及形成覆盖半导体裸片及第一表面修整层的囊封物。
附图说明
通过参考附图详细描述其示例性实施例，本发明的上述以及其它特征将变得更加显而易见，在附图中：
为了说明的简单和清楚起见，图中的元件未必按比例绘制，并且相同参考数字在不同图中表示相同元件。另外，为了描述的简单起见省略众所周知的步骤和元件的描述和细节。如本文中所使用，术语“及/或”包含相关联的所列项目中的一种或多种的任何及所有组合。另外，本文中所使用的术语仅仅是出于描述特定实施例的目的而并不意图限制本发明。如本文中所使用，除非上下文另外明确指示，否则单数形式也意图包含复数形式。将进一步理解术语“包括(comprises/comprising)”及/或“包含(includes/including)”在用于本说明书时规定所陈述的特征、数目、步骤、操作、元件及/或组件的存在，但是并不排除一个或多个其它特征、数目、步骤、操作、元件、组件及/或其群组的存在或添加。将理解，尽管术语“第一”、“第二”等可在本文中使用以描述各个部件、元件、区、层及/或区段，但这些部件、元件、区、层及/或区段应不受这些术语限制。这些术语仅用于区分一个部件、元件、区、层及/或区段与另一部件、元件、区、层及/或区段。因此，举例来说，下文论述的第一部件、第一元件、第一区、第一层及/或第一区段可被称为第二部件、第二元件、第二区、第二层及/或第二区段而不脱离本发明的教示。参考“一个实施例”或“实施例”意味着结合实施例描述的特定特征、结构或特性包含于本发明的至少一个实施例中。因此，在本说明书通篇的各个位置中短语“在一个实施例中”或“在实施例中”的出现未必全部是指同一实施例，但是在一些情况下可以指同一实施例。此外，特定特征、结构或特性可以任何合适方式组合，如在一或多个实施例中将对于所属领域的一般技术人员是显而易见的。另外，术语“在……时”是指某一动作至少出现在起始动作的持续时间的某一部分内。词语“大约”、“近似”或“基本上”的使用是指元件的值预期为接近一种状态值或位置。然而，众所周知，在本领域中总是存在妨碍值或位置恰好如所陈述的一般的轻微变化。除非另外规定，否则如本文中所使用，词语“在……上面”或“在……上”包含所规定的元件可直接或间接物理接触的定向、放置或关系。应进一步理解，下文中所说明及描述的实施例适当地可具有实施例及/或可在无本文中确切地揭示的任何元件存在的情况下实践。
图1A为根据本发明的实施例的说明经封装半导体装置的横截面图；
图1B为说明图1A的区的放大横截面图；
图2A为根据本发明的另一实施例的说明经封装半导体装置的横截面图；
图2B为说明图2A的区的放大横截面图；
图2C为根据替代性实施例的说明图2A的区的放大横截面图；
图3为根据本发明的另一实施例的说明经封装半导体装置的横截面图；
图4为根据本发明的又一实施例的说明经封装半导体装置的横截面图；
图5A为说明由(N×M)个单元构成的载体的平面图；
图5B为说明由N个单元构成的载体的平面图；
图6A到图6J为根据本发明的实施例的依序说明经封装半导体装置的制造方法的横截面图；
图7A到图7C为根据本发明的另一个实施例的依序说明经封装半导体装置的制造方法的横截面图；
图8A到图8I为根据本发明的另一实施例的依序说明经封装半导体装置的制造方法的横截面图；且
图9A到图9C为根据本发明的又一实施例的依序说明经封装半导体装置的制造方法的横截面图。
具体实施方式
本申请案主张名为“具有可路由囊封的传导衬底的半导体封装及方法(SEMICONDUCTOR PACKAGE HAVING ROUTABLE ENCAPSULATEDCONDUCTIVE SUBSTRATE AND METHOD)”的2016年6月3日在美国专利局申请的美国专利申请案第15/173,379号及2015年9月8日在韩国知识产权局申请的韩国专利申请案第10-2015-0126935号的优先权，且所有权益是依据35U.S.C.§119而从所述专利申请案得到，其全部内容以引用的方式并入本文中。
图1A为根据第一实施例的说明具有表面修整层的半导体装置100或经封装半导体装置100的横截面图，且图1B为说明图1A的区的放大横截面图。如图1A中所说明，半导体装置100包含第一层压层110或第一囊封层110、第二层压层120或第二囊封层120、半导体裸片130、传导连接结构140(例如导线140)、囊封物150或封装体150、传导凸块122或凸块垫122，及传导凸块160。根据本实施例，第一层压层110及第二层压层120可被称作可路由的模制引线框架101或可路由囊封的传导衬底101。
在一个实施例中，第一层压层110包含第一表面修整层111、第一接合层111或第一可线接合修整层111、第一传导图案112、导通孔113、传导导通孔113，或传导柱113，及第一树脂层114。在一些实施例中，第一表面修整层111可为金属材料，例如镍/金(Ni/Au)、银(Ag)、铜(Cu)、其组合，及其等效物，但本实施例的方面不限于此。在一个实施例中，第一传导图案112可安置在第一表面修整层111上或毗邻所述第一表面修整层111，及/或可与第一表面修整层111隔开而安置。第一传导图案112可由金属制成，例如铜(Cu)及其等效物，但本实施例的方面不限于此。在一个实施例中，导通孔113形成于第一传导图案112上、连接到所述第一传导图案112，或毗邻所述第一传导图案112，且可相较于第一传导图案112具有较小宽度及较大厚度。导通孔113也可由金属制成，例如铜(Cu)及其等效物，但本实施例的方面不限于此。第一树脂层114可覆盖第一表面修整层111、第一传导图案112及导通孔113。然而，第一表面修整层111及第一传导图案112的顶部表面可不由第一树脂层114覆盖。并且，导通孔113的底部表面可不由第一树脂层114覆盖。第一树脂层114可由聚合物材料制成，例如一或多种聚酰亚胺(PI)、苯并环丁烯(BCB)、聚苯并恶唑(PBO)、双马来酰亚胺三嗪(BT)、酚系树脂、环氧模制化合物及其等效物，但本实施例的方面不限于此。在一些实施例中，导通孔113连接到第一传导图案112的仅第一部分，从而使第一传导图案112的第二部分至少部分地嵌入在第一树脂层114内，如图1A中大体上所说明。
在一个实施例中，第二层压层120包含第二传导图案121、凸块垫122或传导垫122，及第二树脂层123。在一个实施例中，第二传导图案121可安置在导通孔113上或毗邻所述导通孔113，且可定位成邻近于第一树脂层114的底部表面。在一些实施例中，第二传导图案121可安置在第一树脂层114的底部表面上或毗邻所述第一树脂层114的所述底部表面。另外，第二传导图案121可为金属，例如铜(Cu)及其等效物，但本实施例的方面不限于此。在一个实施例中，凸块垫122可形成于第二传导图案121上，连接到所述第二传导图案121，或毗邻所述第二传导图案121，且可相较于第二传导图案121具有较小宽度及较大厚度。凸块垫122也可为金属，例如铜(Cu)及其等效物，但本实施例的方面不限于此。第二树脂层123可覆盖第一树脂层114、第二传导图案121及凸块垫122的至少部分。然而，第二传导图案121的顶部表面可不由第二树脂层123覆盖。并且，凸块垫122的底部表面可不由第二树脂层123覆盖且可暴露于外部。第二树脂层123可由聚合物材料制成，例如一或多种聚酰亚胺(PI)、苯并环丁烯(BCB)、聚苯并恶唑(PBO)、双马来酰亚胺三嗪(BT)、酚系树脂、环氧模制化合物及其等效物，但本实施例的方面不限于此。
根据本实施例，包含第一层压层110及第二层压层120的堆叠结构可被称作可路由囊封的传导衬底101或可路由的模制引线框架101，所述可路由囊封的传导衬底101或所述可路由的模制引线框架101可在制造半导体装置100的过程中作为单个单元处置。
在一个实施例中，半导体裸片130连接到可路由的模制引线框架101。在一些实施例中，半导体裸片130使用(例如)粘附剂135附接到第一层压层110，且进一步电连接到第一层压层110。根据一个实施例，半导体裸片130可使用导线140电连接到第一表面修整层111。在一个实施例中，导线140包括金线，且第一表面修整层111包括镍/金(Ni/Au)或银(Ag)。在此实施例中，导线140及第一表面修整层111可较容易地彼此连接。在一些实施例中，半导体裸片130可包含电路，其包含(例如)数字信号处理器(DSP)、网络处理器、功率管理单元、音频处理器、RF电路、无线基带芯片上系统(SoC)处理器、传感器、专用集成电路(ASIC)，及/或所属领域的技术人员已知的其它有源及/或无源电子装置。
在一个实施例中，囊封物150囊封、覆盖或模制可路由的模制引线框架101，所述可路由的模制引线框架101包含(例如)半导体裸片130及导线140，以及第一层压层110的至少部分。在一些实施例中，囊封物150可覆盖第一表面修整层111及第一传导图案112。囊封物150可为聚合物复合材料，例如，用于通过模制过程执行囊封的环氧模制化合物、用于通过分配器执行囊封的液体囊封部件，或其等效物，但本实施例的方面不限于此。在一个优选实施例中，当第一树脂层114、第二树脂层123及囊封物150使用同一材料形成时，其可具有相同热膨胀系数，进而在半导体装置100的制造过程或操作期间最小化翘曲。
在一个实施例中，传导凸块160可连接到凸块垫122。在一个实施例中，传导凸块160可熔接或附接到凸块垫122，所述凸块垫122不由第二树脂层123覆盖。传导凸块160可为导柱、具有焊盖的导柱、传导球、焊球及其等效物，但本实施例的方面不限于此。在所说明的实施例中，传导凸块160作为一个实例展示为传导球。
根据本实施例，半导体装置100经配置为经线接合的可路由的模制引线框架封装，其经进一步配置为球栅阵列类型封装。
根据本实施例，包含(例如)第一层压层110及第二层压层120的可路由的模制引线框架101及囊封物150的侧表面通过在制造半导体装置100的过程中分离而经配置为彼此共面。在一个实施例中，以下各结构的侧表面基本上彼此共面：第一层压层110的第一树脂层114、第二层压层120的第二树脂层123，及囊封物150。在一个优选的实施例中，第一层压层110的第一传导图案112不通过第一树脂层114的侧表面暴露于外部，且第二层压层120的第二传导图案121不通过第二树脂层123的侧表面暴露于外部。因此，有可能防止第一传导图案112及第二传导图案121与外部装置之间的不必要的电短路。另外，因为第一表面修整层111形成于第一传导图案112上，因此导线140可容易地连接到第一表面修整层111。
如图1B中所说明，在一个实施例中，第一表面修整层111的顶部表面基本上与第一树脂层114的顶部表面共面。然而，与第一表面修整层111水平或侧向隔开的第一传导图案112的顶部表面可低于第一树脂层114的顶部表面或相对于所述第一树脂层114的所述顶部表面凹陷。此外，每个凸块垫122的底部表面均高于第二树脂层123的底部表面或相对于所述第二树脂层123的所述底部表面凹陷。换句话说，每个第一传导图案112的顶部表面均在形成于第一树脂层114中的第一开口114a内部凹陷。同样地，每一凸块垫122的底部表面均在形成于第二树脂层123中的第二开口123a内部凹陷。
根据本实施例，此类配置特征可由制造过程所造成。举例来说，当对第一树脂层114执行移除步骤(例如研磨及/或蚀刻)时，第一表面修整层111充当掩模，且每个第一传导图案112的顶部表面均可比第一树脂层114略微多地过度蚀刻以使得第一传导图案112中的顶部表面可定位在第一开口114a内部或在所述第一开口114a内凹陷。另外，当对第二树脂层123执行移除步骤(例如，研磨及/或蚀刻)时，每个第二传导图案121的底部表面均相对于第二树脂层123过度蚀刻，以使得第二传导图案121的底部表面可定位在第二开口123a内部或在所述第二开口123a内凹陷。
因此，根据本实施例，形成于第一树脂层114中的第一开口114a改进囊封物150与第一树脂层114之间的耦合力，且形成于第二树脂层123中的第二开口123a改进传导凸块160、凸块垫122及第二树脂层123之间的耦合力。在一些实施例中，导通孔113及第一传导图案112及/或第二传导图案121以及凸块垫122的部分于如在图1B中大体上所说明的横截面图中形成如同“T”的形状。在一些实施例中，第一传导图案112及导通孔113为第一传导结构的实例，且第二传导图案121及凸块垫122为第二传导结构的实例。换句话说，第一传导结构可包括第一传导图案112及导通孔113，且第二传导结构可包括第二传导图案121及凸块垫122。
图2A为根据另一实施例的说明具有表面修整层的半导体装置200或经封装半导体装置200的横截面图；图2B为说明图2A的区的放大横截面图；且图2C为根据替代性实施例的说明不具有表面修整层的区的放大横截面图。
如图2A中所说明，代替使用传导凸块，可路由的模制引线框架101可替代地包含形成于第二层压层120的凸块垫122上或连接到所述第二层压层120的所述凸块垫122的第二表面修整层224或第二接合层224。在一些实施例中，第二表面修整层224可包括金属材料，例如镍/金(Ni/Au)、银(Ag)、锡(Sn)、其组合及其等效物，但本发明的实施例的方面不限于此。根据本实施例，半导体装置200经配置为经线接合的可路由的模制引线框架封装，其经进一步配置为栅格阵列类型封装。在另一实施例中，传导凸块可连接到第二表面修整层224。
如图2B中所说明，在一个实施例中，第一表面修整层111的顶部表面基本上与第一树脂层114的顶部表面共面，且第二表面修整层224的底部表面基本上与第二树脂层123的底部表面共面。然而，与第一表面修整层111水平或侧向隔开的每个第一传导图案的顶部表面均可低于第一树脂层114的顶部表面或相对于所述第一树脂层114的所述顶部表面凹陷。换句话说，所有第一传导图案112的顶部表面在形成于第一树脂层114中的第一开口114a内部凹陷。
根据本实施例，此类配置特征可由制造过程所造成。举例来说，当对第一树脂层114及/或第二树脂层123执行移除步骤(例如，研磨及/或蚀刻)时，第一表面修整层111及/或第二树脂层123充当掩模，且第一传导图案112的顶部表面可比第一树脂层114略微多地过度蚀刻，以使得第一传导图案112的顶部表面定位在形成于第一树脂层114中的第一开口114a内部或在所述第一开口114a内凹陷。
如图2C中所说明，当第一传导图案112'上无第一表面修整层形成且凸块垫122'上无第二表面修整层形成时，第一传导图案112'的顶部表面可定位成低于第一树脂层114'的顶部表面或相对于所述第一树脂层114'的所述顶部表面凹陷，且凸块垫122'的底部表面可定位成高于第二树脂层123'的底部表面或相对于所述第二树脂层123'的所述底部表面凹陷。在一个实施例中，当在不存在掩模层的情况下对第一树脂层114'及/或第二树脂层123'执行移除步骤(例如，研磨及/或蚀刻)时，第一传导图案112'的顶部表面及/或凸块垫122'的底部表面可相较于第一树脂层114'及/或第二树脂层123'过度蚀刻。因此，第一传导图案112'定位在第一树脂层114'的第一开口114a'内部或在所述第一树脂层114'的所述第一开口114a'内凹陷，且凸块垫122'的底部表面定位在第二树脂层123'的第二开口123a'内部或在所述第二树脂层123'的所述第二开口123a'内凹陷。
图3为根据另一实施例的说明具有表面修整层的半导体装置300或经封装半导体装置300的横截面图。如图3中所说明，第一表面修整层311、第一接合层311或第一可线接合修整层311包括金属材料，例如银(Ag)，且由铜(Cu)制成的导通孔113可形成于第一表面修整层311上，连接到所述第一表面修整层311，或毗邻所述第一表面修整层311。根据本实施例，在半导体装置300中，导线140可较容易地接合到由银(Ag)制成的第一表面修整层311。另外，根据本实施例，半导体装置300经配置为经线接合的可路由的模制引线框架封装，其经进一步配置为球栅阵列类型封装。此外，根据本实施例，第一表面修整层311还可经配置为用于半导体装置300的第一传导图案。在一些实施例中，导通孔113为第一传导结构的实例，且第二传导图案121及凸块垫122为第二传导结构的实例。
图4为根据又一实施例的说明具有表面修整层的半导体装置400或经封装半导体装置400的横截面图。如图4中所说明，第一表面修整层411、第一接合层411或第一可线接合修整层411可包括金属材料，例如铜(Cu)，且由铜(Cu)制成的导通孔113可形成于第一表面修整层411上，连接到所述第一表面修整层411，或毗邻所述第一表面修整层411。根据本实施例，因为半导体裸片130不通过线接合直接连接到第一表面修整层411，因此其可通过其它类型的传导连接结构(例如，微凸块435)连接到第一表面修整层411。在一个实施例中，半导体裸片130以倒装芯片型配置电连接到第一表面修整层411。另外，囊封物150插入在半导体裸片130与第一层压层110之间，进而允许半导体裸片130及第一层压层110彼此机械地整合。另外，由金属材料(例如，镍/金(Ni/Au)、银(Ag)或锡(Sn))制成的第二表面修整层224或第二接合层224可形成于凸块垫122上而非传导凸块上。根据本实施例，半导体装置400经配置为倒装芯片可路由的模制引线框架封装，其经进一步配置为栅格阵列类型封装。根据本实施例，第一表面修整层411还可经配置为用于半导体装置400的第一传导图案。在一替代性实施例中，传导凸块可形成于第二表面修整层224上。在一些实施例中，导通孔113为第一传导结构的实例，且第二传导图案121及凸块垫122为第二传导结构的实例。应理解，图4中用于半导体裸片130的附接配置可用于本文中所描述的任一实施例中。
图5A为说明由经封装单元的N×M矩阵或阵列构成的载体171的平面图，且图5B为说明由1xM个单元构成的载体172的平面图。如图5A中所说明，于其上制造(例如)半导体装置100到400的载体171形成于由N×M个单元构成的矩阵中。在一个实施例中，N及M优选地可为大于或等于2的整数。如上文所描述，由于载体171以矩阵类型形成，因此可大批量地制造根据本发明的实施例的半导体装置100到半导体装置400。如图5B中所说明，载体172可作为1xM个单元的条带形成。在一个实施例中，M优选地可为大于1的整数。
图6A到图6J为依序说明具有第一表面修整层111的半导体装置100或经封装半导体装置100的制造方法的实施例的横截面图。如图6A到图6J中所说明，半导体装置100的制造方法包含以下步骤：提供载体170及形成第一表面修整层111；形成第一传导图案112；形成导通孔113；提供第一树脂层114；首先移除(例如，研磨)第一树脂层114的一部分；形成第二传导图案121；形成凸块垫122；提供第二树脂层123；移除载体170；连接半导体裸片130；形成囊封物150；以及形成传导凸块160。
如图6A中所说明，在提供载体170及形成第一表面修整层111的步骤中，制备具有(例如)基本上扁平板状形状的载体170，且多个第一表面修整层111形成于载体170的主表面上或邻近于所述载体170的所述主表面形成。在一个实施例中，载体170可由传导材料(例如，铜(Cu))、绝缘材料(例如，聚酰亚胺)及/或陶瓷材料(例如，氧化铝)，或所属领域的技术人员已知的其它材料制成。在载体170由传导材料制成的一些实施例中，第一表面修整层111可形成于载体170的表面上，连接到所述载体170的所述表面，或毗邻所述载体170的所述表面。在载体170由绝缘材料或陶瓷材料制成的其它实施例中，传导晶种层(由(例如)钨或钨钛制成)可首先形成，且第一表面修整层111接着可形成于传导晶种层上，连接到所述传导晶种层，或毗邻所述传导晶种层。另外，第一表面修整层111可通过物理气相沉积(PVD)、化学气相沉积(CVD)、金属溅镀、金属蒸镀、电解或无电镀敷或所属领域的技术人员已知的其它形成技术形成。根据本实施例，第一表面修整层111包括较容易地接合到传导连接结构(例如，连接线或凸块)或与所述传导连接结构形成接合的材料。另外，第一表面修整层111优选地包括相对于第一传导图案112选择性地蚀刻的材料。在一些实施例中，第一表面修整层111可由镍/金(Ni/Au)或银(Ag)制成，但本实施例的方面不限于此。在一个实施例中，第一表面修整层111具有在从大约0.1微米到15微米的范围内的厚度。
如图6B中所说明，在形成第一传导图案112的步骤中，第一传导图案112形成于第一表面修整层111及载体170的表面上，连接到所述第一表面修整层111及所述载体170的表面，或毗邻所述第一表面修整层111及所述载体170的表面。更具体地说，第一传导图案经配置为经路由的第一传导图案112，且可形成于第一表面修整层111及载体170的表面上。第一传导图案112可通过PVD、CVD、金属溅镀、金属蒸镀、电解或无电镀敷或所属领域的技术人员已知的其它形成技术形成。另外，第一传导图案112可由传导材料制成，例如铜(Cu)。在一个实施例中，第一传导图案112具有在从大约3微米到30微米的范围内的厚度。
如图6C中所说明，在形成导通孔113、传导导通孔113或传导柱113的步骤中，形状为相对厚的导柱的导通孔113形成于第一传导图案112上，连接到所述第一传导图案112，或毗邻所述第一传导图案112。导通孔113可通过无电镀敷及/或电镀形成且可由铜(Cu)制成。在一个实施例中，导通孔113具有在从大约20微米到100微米的范围内的厚度。
如图6D中所说明，在形成第一树脂层114的步骤中，第一树脂层114形成或被涂布到载体170上，进而允许第一树脂层114覆盖载体170、第一表面修整层111、第一传导图案112及导通孔113。在一些实施例中，第一树脂层114可通过(例如)旋涂、喷涂或深涂接着通过UV及/或热固化而形成于载体170上。第一树脂层114可由聚合物材料制成，例如一或多种聚酰亚胺(PI)、苯并环丁烯(BCB)、聚苯并恶唑(PBO)、双马来酰亚胺三嗪(BT)、酚系树脂、环氧模制化合物及其等效物，但本实施例的方面不限于此。在一个实施例中，第一树脂层114与囊封物150相似可由普通环氧模制化合物制成。在此实施例中，第一树脂层114可通过压缩模塑或传递模塑形成。
如图6E中所说明，在第一次移除的步骤中，使用(例如)研磨及/或蚀刻工艺部分地移除第一树脂层114直到导通孔113暴露于第一树脂层114外部为止。以此方式，导通孔113的顶部表面变得基本上与第一树脂层114的顶部表面共面。
根据本实施例，第一表面修整层111、第一传导图案112、导通孔113及第一树脂层114可集体地界定为第一层压层110。
如图6F中所说明，在形成第二传导图案121的步骤中，第二传导图案121形成于通过第一树脂层114暴露于外部的导通孔113上，毗邻所述导通孔113，或连接到所述导通孔113。在一个实施例中，第二传导图案121于第二树脂层123上路由同时电连接到导通孔113。第二传导图案121可通过PVD、CVD、金属溅镀、金属蒸镀、电解或无电镀敷或所属领域的技术人员已知的其它形成技术形成。另外，第二传导图案121可由传导材料制成，例如铜(Cu)。在一个实施例中，第二传导图案121具有在从大约3微米到15微米的范围内的厚度。
如图6G中所说明，在形成凸块垫122的步骤中，凸块垫122形成于第二传导图案121上，连接到所述第二传导图案121，或毗邻或连接到所述第二传导图案121。凸块垫122可通过PVD、CVD、金属溅镀、金属蒸镀、电解或无电镀敷或所属领域的技术人员已知的其它形成技术形成。另外，凸块垫122可由传导材料制成，例如铜(Cu)。在一个实施例中，凸块垫122具有在从大约20微米到100微米的范围内的厚度。
如图6H中所说明，在形成第二树脂层123的步骤中，第二树脂层123形成或被涂布到第一层压层110上，进而允许第二树脂层123覆盖第一树脂层114、第二传导图案121及凸块垫122。在一些实施例中，第二树脂层123可以与第一树脂层114相同的方法且使用与第一树脂层114相同的材料涂布。另外，在涂布以及固化第二树脂层123之后，可进一步执行第二次移除步骤。在第二次移除步骤中，使用(例如)研磨及/或蚀刻工艺部分地移除第二树脂层123直到凸块垫122暴露于第二树脂层123外部为止。以此方式，凸块垫122的顶部表面变得基本上与第二树脂层123的顶部表面共面。在一个实施例中，如果凸块垫122上无掩模层形成，那么凸块垫122的表面在如图1B中所说明的蚀刻工艺之后定位在第二树脂层123的第二开口内部或在所述第二树脂层123的所述第二开口内部凹陷。
根据本实施例，第二传导图案121、凸块垫122及第二树脂层123可集体地界定为第二层压层120。另外，第一层压层110及第二层压层120可集体地界定为可路由的模制引线框架101。
如图6I中所说明，在移除载体170的步骤中，从第一层压层110移除载体170。更具体地说，从第一表面修整层111、第一传导图案112及第一树脂层114移除载体170，进而允许第一表面修整层111、第一传导图案112及第一树脂层114暴露于外部。在一个实施例中，可使用研磨及/或蚀刻工艺移除载体170。在一个实施例中，不具有第一表面修整层111的第一传导图案112的表面可过度蚀刻以定位在如图1B中所说明的第一树脂层114的第一开口内部或在所述第一树脂层114的所述第一开口内凹陷。
如图6J中所说明，在连接半导体裸片130、形成囊封物150及形成传导凸块160的步骤中，半导体裸片130可使用(例如)粘附剂135附接到第一层压层110。并且，半导体裸片130可使用传导连接结构(例如，导线140)电连接到第一表面修整层111。接下来，半导体裸片130及导线140使用囊封物150加以囊封。囊封物150可为聚合物复合材料，例如，用于通过模制过程执行囊封的环氧模制化合物、用于通过分配器执行囊封的液体囊封部件，或其等效物，但本实施例的方面不限于此。在一个实施例中，传导凸块160形成于通过第二层压层120暴露于外部的凸块垫122上或连接到所述凸块垫122。传导凸块160可选自由以下组成的群组：导柱、具有焊盖的导柱、传导球、焊球，及其等效物，但本实施例的方面不限于此。在图6J的所说明的实施例中，传导凸块160作为一实例实施例展示为传导球。
另外，如上文所描述，由于本实施例的过程可以N×M矩阵或1xM个条带的形式执行，因此可接着执行分离过程(例如，锯切过程)以产生个别半导体装置100。
根据本实施例，提供用于制造半导体装置100的制造方法，其中第一表面修整层111首先形成且结构及组件的其余部分可随后形成。具体地说，本实施例提供经线接合的可路由的模制引线框架球栅阵列类型封装。
图7A到图7C为依序说明用于具有第二表面修整层224的半导体装置200或经封装半导体装置200的制造方法的实施例的横截面图。在本实施例中，可使用结合图6A到图6H说明的制造步骤，且将不在此处再次重复其细节。
如图7A中所说明，在形成(例如，涂布以及固化)第二树脂层123以及部分地移除(例如，研磨及/或蚀刻)第二树脂层123的步骤之后，第二表面修整层224可进一步形成于通过第二树脂层123暴露于外部的凸块垫122上，连接到所述凸块垫122，或毗邻所述凸块垫122。在一个实施例中，第二表面修整层224可通过PVD、CVD、金属溅镀、金属蒸镀、电解或无电镀敷或所属领域的技术人员已知的其它形成技术形成。根据本实施例，第二表面修整层224包括较容易地接合到安置在组装的下一级上的传导结构(例如，印刷电路板)或与所述传导结构形成接合。在一些实施例中，第二表面修整层224可由镍/金(Ni/Au)、银(Ag)、锡(Sn)及其等效物制成，但本实施例的方面不限于此。
如图7B中所说明，由于移除载体170，因此提供可路由的模制引线框架101，所述可路由的模制引线框架101具有通过第一层压层110暴露于外部的第一表面修整层111及第一传导图案112，以及通过第二层压层120暴露于外部的第二表面修整层224。根据本实施例，第一表面修整层111在可路由的模制引线框架101的制造过程的初始阶段形成，且第二表面修整层224在可路由的模制引线框架101的制造过程的最后阶段形成。
如图7C中所说明，半导体裸片130使用(例如)粘附剂135附接到可路由的模制引线框架101，且半导体裸片130由传导连接结构(例如，导线140)电连接到第一表面修整层111。另外，半导体裸片130及导线140可使用如先前所描述的囊封物150加以囊封或模制。
根据本实施例，传导凸块可不包含在凸块垫122上，且先前形成的第二表面修整层224暴露于外部。因此，本实施例提供经线接合的可路由的模制引线框架栅格阵列封装。在一替代性实施例中，传导凸块也可形成于第二表面修整层224上。
图8A到图8I为根据另一实施例的依序说明具有表面修整层的半导体装置300或经封装半导体装置300的制造方法的横截面图。如图8A到图8I中所说明，半导体装置300的制造方法可包含以下步骤：提供载体170及形成第一表面修整层311；形成导通孔113；提供第一树脂层114；首先移除(例如，研磨)；形成第二传导图案121；形成凸块垫122；提供第二树脂层123；移除载体170；连接半导体裸片130；形成囊封物150；以及形成传导凸块160。
如图8A中所说明，在提供载体170及形成第一表面修整层111的步骤中，制备如先前所描述的载体170，且第一表面修整层311形成于载体170上。在一个实施例中，第一表面修整层311可基本上充当第一传导图案。根据本实施例，第一表面修整层311包括较容易地接合到传导连接结构(例如，连接线或凸块)或与所述传导连接结构形成接合的材料。在一些实施例中，第一表面修整层311可由银(Ag)制成。另外，第一表面修整层311可通过PVD、CVD、金属溅镀、金属蒸镀、电解或无电镀敷或所属领域的技术人员已知的其它形成技术形成。在一个实施例中，第一表面修整层311具有在从大约3微米到15000微米的范围内的厚度。
如图8B中所说明，在形成导通孔113的步骤中，形状为相对厚的导柱的导通孔113形成于第一表面修整层311上，连接到所述第一表面修整层311，或毗邻所述第一表面修整层311。导通孔113可由铜(Cu)制成且如先前所描述而形成。
如图8C中所说明，在提供第一树脂层114的步骤中，第一树脂层114形成或被涂布到如先前所描述的载体170上，进而允许第一树脂层114覆盖载体170、第一表面修整层311及导通孔113。
如图8D中所说明，在第一次移除的步骤中，使用(例如)研磨及/或蚀刻工艺部分地移除第一树脂层114直到导通孔113暴露于第一树脂层114外部为止。根据本实施例，第一表面修整层311、导通孔113及第一树脂层114可集体地界定为第一层压层110。
如图8E中所说明，在形成第二传导图案121的步骤中，第二传导图案121形成于通过第一树脂层114暴露于外部的导通孔113上，连接到所述导通孔113，或毗邻所述导通孔113。根据本实施例，第二传导图案121于第二树脂层123上路由同时电连接到导通孔113。第二传导图案121可如先前所描述而形成且可由铜(Cu)或所属领域的技术人员已知的其它材料制成。
如图8F中所说明，在形成凸块垫122的步骤中，凸块垫122形成于第二传导图案121上或连接到所述第二传导图案121。凸块垫122可如先前所描述而形成且可由铜(Cu)或所属领域的技术人员已知的其它材料制成。
如图8G中所说明，在提供第二树脂层123的步骤中，第二树脂层123形成或被涂布到第一层压层110上，进而安置第二树脂层123以覆盖第一树脂层114、第二传导图案121及凸块垫122。另外，在涂布以及固化第二树脂层123之后，可进一步执行第二次移除步骤。在第二次移除步骤中，使用(例如)研磨及/或蚀刻工艺部分地移除第二树脂层123直到凸块垫122暴露于第二树脂层123外部为止。在一个实施例中，如果凸块垫122上无掩模层形成，那么凸块垫122的表面可在蚀刻步骤之后定位在第二树脂层123的第二开口内部或在所述第二树脂层123的所述第二开口内凹陷。
根据本实施例，第二传导图案121、凸块垫122及第二树脂层123可集体地界定为第二层压层120。
如图8H中所说明，在移除载体170的步骤中，从第一层压层110移除载体170。更具体地说，从第一表面修整层311及第一树脂层114移除载体170，进而允许第一表面修整层311及第一树脂层114暴露于外部。在一个实施例中，可使用研磨及/或蚀刻工艺移除载体170。根据本实施例，包含银(Ag)的第一表面修整层311充当掩模，第一表面修整层311的表面变得基本上与第一树脂层114的表面共面。
如图8I中所说明，在连接半导体裸片130、形成囊封物150及形成传导凸块160的步骤中，半导体裸片130可使用(例如)粘附剂135附接到第一层压层110。并且，半导体裸片130使用传导连接结构(例如，导线140)电连接到第一表面修整层311。接下来，半导体裸片130及导线140使用如先前所描述的囊封物150加以囊封。在一个实施例中，传导凸块160形成于通过第二层压层120暴露于外部的凸块垫122上或连接到所述凸块垫122。
如上文所描述，本实施例提供半导体装置300的制造方法，其中可包括银(Ag)的第一表面修整层311首先形成且结构及组件的其余部分可随后形成。另外，本实施例提供经线接合的可路由的模制引线框架球栅阵列封装。
图9A到图9C为根据又一实施例的依序说明具有表面修整层的半导体装置400或经封装半导体装置400的制造方法的横截面图。在本实施例中，可使用结合图8A到图8G说明的制造步骤，且将不在此处再次重复其细节。然而，半导体装置400的制造方法不同于半导体装置300的制造方法。确切地说，第一表面修整层411由不同材料制成。在一个实施例中，第一表面修整层411由铜(Cu)而不是银(Ag)制成。
如图9A中所说明，在形成及固化第二树脂层123以及研磨及/或蚀刻第二树脂层123的步骤之后，第二表面修整层224可进一步形成于暴露于第二树脂层123外部的凸块垫122上或连接到所述凸块垫122。在一个实施例中，第二表面修整层224可如先前所描述而制成且可包括镍/金(Ni/Au)、银(Ag)、锡(Sn)及其等效物中的一种或多种，但本实施例的方面不限于此。
如图9B中所说明，在移除载体170之后，提供可路由的模制引线框架101，其包含具有以下各结构的引线框架101：通过第一层压层110暴露于外部的第一表面修整层411(如上文所描述，其还充当传导图案)；以及通过第二层压层120暴露于外部的第二表面修整层224。根据本实施例，第一表面修整层411在可路由的模制引线框架101的制造过程的初始阶段形成，且第二表面修整层224在可路由的模制引线框架101的制造过程的最后阶段形成。
如图9C中所说明，半导体裸片130定位于可路由的模制引线框架101上且由传导凸块结构(例如，微凸块435)电连接到由铜(Cu)制成的第一表面修整层411。更具体地说，在可路由的模制引线框架101中，半导体裸片130以倒装芯片型配置连接到第一层压层110的第一表面修整层411。在一些实施例中，半导体裸片130及微凸块435使用如先前所描述的囊封物150加以囊封。
在一些实施例中，传导凸块并不分离地形成于凸块垫122上，且先前形成的第二表面修整层224暴露于外部。因此，本实施例提供倒装芯片可路由的模制引线框架栅格阵列封装。在一替代性实施例中，传导凸块还可形成于第二表面修整层224上。
根据所有上述内容，所属领域的技术人员可确定，根据一个实施例，半导体装置包含：第一层压层，其包含第一表面修整层、连接到第一表面修整层或与第一表面修整层隔开的第一传导图案、形成于第一传导图案上的导通孔，及覆盖第一表面修整层、第一传导图案及导通孔的第一树脂层；第二层压层，其包含形成于导通孔中的第二传导图案、形成于第二传导图案上的凸块垫，及覆盖第一树脂层、第二传导图案及凸块垫的第二树脂层；半导体裸片，其连接到第一层压层的第一表面修整层；及囊封物，其覆盖第一层压层及半导体裸片。
根据所有上述内容，所属领域的技术人员可确定，根据另一实施例，半导体装置的制造方法包含：在载体上形成第一表面修整层；在载体及第一表面修整层上形成第一传导图案；在第一传导图案上形成导通孔且在载体、第一表面修整层、第一传导图案及导通孔上涂布第一树脂层；在导通孔上形成第二传导图案及凸块垫且在第一树脂层、第二传导图案及凸块垫上涂布第二树脂层；从第一表面修整层、第一传导图案及第一树脂层移除载体；以及将半导体裸片连接到第一表面修整层且使用囊封物囊封半导体裸片。
根据所有上述内容，所属领域的技术人员可确定，根据另一实施例，经封装半导体装置可进一步包括连接到第二传导结构且暴露于第二树脂层外部的第二表面修整层，其中第一表面修整层包括镍/金(Ni/Au)、银(Ag)或铜(Cu)中的一种或多种；且第二表面修整层包括镍/金(Ni/Au)、银(Ag)或锡(Sn)中的一种或多种。在经封装半导体装置的另一实施例中，半导体裸片可通过传导凸块以倒装芯片配置电耦合到第一表面修整层。在经封装半导体装置的又一实施例中，半导体裸片附接到可路由囊封的传导衬底且通过连接线电耦合到第一表面修整层。
根据所有上述内容，所属领域的技术人员可确定，根据另一实施例，在制造具有可路由囊封的传导衬底的半导体装置的方法中，提供可路由囊封的传导衬底可包括提供包括铜的第一表面修整层；且电耦合半导体裸片可包括以倒装芯片配置与传导凸块耦合。在另一实施例中，电耦合半导体裸片可包括以倒装芯片配置与传导凸块耦合。
鉴于所有上述内容，显而易见，已揭示制造使用可路由囊封的传导衬底以及结构的半导体封装的新颖方法。包含可路由囊封的传导衬底以及其它特征包含囊封在第一树脂层内的第一传导结构、囊封在第二树脂层内的第二传导结构，及安置在第一传导结构的至少部分上的表面修整层。表面修整层暴露在第一树脂层中，第一传导结构电连接到第二传导结构，且第二传导结构的至少部分暴露于第二树脂层外部。半导体裸片电耦合到表面修整层，且囊封物覆盖半导体裸片及第一表面修整层。可路由囊封的传导衬底促进封装级嵌入式传导图案的有效路由，且表面修整层在可路由囊封的传导衬底与半导体裸片之间提供增强的连接可靠性。另外，可路由囊封的传导衬底支持对小型化及较高性能的电子装置的需求，针对组装的下一级支持各种互连方案，可在进一步组装步骤之前制造以缩短制造周期时间，可容易地并入到制造流程中，且具成本效益。
虽然已特定地参考本发明的示例性实施例展示且描述了本发明，但所属领域的技术人员将理解，可进行形式及细节上的多种改变，而不脱离所附权利要求书所界定的本发明的精神及范围。
如所附权利要求书所反映，本发明的方面可在于单个前述揭示的实施例的不到全部的特征。因此，所附权利要求书在此明确地并入到此具体实施方式中，其中每一权利要求本身独立地作为本发明的单独实施例。此外，虽然本文中所描述的一些实施例包含其它实施例中所包含的一些但非全部其它特征，但如所属领域的技术人员将理解，不同实施例的特征的组合意图在本发明的范围内且意图形成不同的实施例。

Claims (12)

1.一种半导体装置，其特征在于，其包括：
第一层压层，其包括：
第一表面修整层；
第一传导图案，其包括连接到所述第一表面修整层的第一部分及与所述第一表面修整层侧向地隔开的第二部分；
传导导通孔，其连接到所述第一传导图案；及
第一树脂层，其覆盖所述第一传导图案、所述传导导通孔，及所述第一表面修整层的一部分，其中所述第一表面修整层暴露在所述第一树脂层的第一表面中且所述传导导通孔暴露在所述第一树脂层的第二表面中；
第二层压层，其邻近于所述第一层压层且包括：
第二传导图案，其连接到所述传导导通孔；
传导垫，其连接到所述第二传导图案；及
第二树脂层，其覆盖所述第一树脂层、所述第二传导图案及所述传导垫的至少一部分，其中所述传导垫暴露在所述第二树脂层的第一表面中；
半导体裸片，其电耦合到所述第一表面修整层；及
囊封物，其覆盖所述第一层压层及所述半导体裸片的至少一部分。
2.根据权利要求1所述的半导体装置，其特征在于，
所述传导垫的表面在所述第二树脂层中的开口内凹陷；且
所述半导体装置进一步包括连接到所述传导垫的传导凸块。
3.根据权利要求1所述的半导体装置，其特征在于，
所述第一表面修整层包括镍/金(Ni/Au)、银(Ag)或铜(Cu)中的一种或多种；
所述第一表面修整层及所述半导体裸片由导线电耦合；
所述半导体装置进一步包括连接到所述传导垫的第二表面修整层；且
所述第二表面修整层包括镍/金(Ni/Au)、银(Ag)或锡(Sn)中的一种或多种。
4.根据权利要求1所述的半导体装置，其特征在于，
所述第一表面修整层包括铜(Cu)；且
所述第一表面修整层及所述半导体裸片由传导凸块电耦合；且
所述第一树脂层、所述第二树脂层及所述囊封物包括模制化合物材料。
5.根据权利要求1所述的半导体装置，其特征在于，
所述第一树脂层、所述第二树脂层及所述囊封物包括具有相似热膨胀系数的模制化合物材料；
所述第一表面修整层基本上与所述第一树脂层共面；且
所述第一传导图案的所述第二部分的表面在所述第一树脂层的所述第一表面下方凹陷。
6.一种经封装半导体装置，其特征在于，其包括：
可路由囊封的传导衬底，其包括：
第一传导结构，其囊封在第一树脂层内；
第二传导结构，其电耦合到所述第一传导结构且囊封在第二树脂层内；及
第一表面修整层，其安置在所述第一传导结构的至少部分上，其中：
所述第一表面修整层暴露在所述第一树脂层中；且
所述第二传导结构的至少部分暴露在所述第二树脂层中；
半导体裸片，其电耦合到所述第一表面修整层；及
囊封物，其囊封所述半导体裸片及所述第一表面修整层。
7.根据权利要求6所述的经封装半导体装置，其特征在于，
所述第一传导结构包括连接到第一传导图案的传导导通孔；
所述第二传导结构包括连接到传导凸块的第二传导图案；且
所述第一表面修整层连接到所述第一传导图案的至少部分。
8.根据权利要求6所述的经封装半导体装置，其特征在于，
所述第一传导结构包括传导导通孔；
所述第一表面修整层经配置为第一传导图案；
所述第一传导图案的至少一部分连接到所述传导导通孔；
所述第一表面修整层包括银(Ag)或铜(Cu)中的一种或多种；且
所述经封装半导体装置进一步包括连接到所述第二传导结构的传导凸块。
9.一种制造具有可路由囊封的传导衬底的半导体装置的方法，其特征在于，
提供可路由囊封的传导衬底；所述可路由囊封的传导衬底包括以下结构：
第一传导结构，其囊封在第一树脂层内；
第二传导结构，其电耦合到所述第一传导结构且囊封在第二树脂层内；及
第一表面修整层，其安置在所述第一传导结构的至少部分上，其中：
所述第一表面修整层暴露在所述第一树脂层中；且
所述第二传导结构的至少部分暴露在所述第二树脂层中；
将半导体裸片电耦合到所述第一表面修整层；及
形成覆盖所述半导体裸片及所述第一表面修整层的囊封物。
10.根据权利要求9所述的方法，其特征在于，提供可路由囊封的传导衬底包括：
在载体上提供所述第一表面修整层；
提供在所述载体及所述第一表面修整层中均包括的第一传导图案，且在所述第一传导图案的至少部分上包括传导导通孔的所述第一传导结构；
提供覆盖所述载体、所述第一表面修整层、所述第一传导图案及所述传导导通孔的所述第一树脂层；
提供包括连接到所述传导导通孔的第二传导图案及传导垫的所述第二传导结构；
提供覆盖所述第一树脂层、所述第二传导图案及所述传导垫的所述第二树脂层；及
移除所述载体。
11.根据权利要求10所述的方法，其特征在于，进一步包括：
在提供所述第二传导结构之前移除所述第一树脂层的一部分，以将所述传导导通孔暴露于外部；及
将传导凸块连接到所述传导垫，其中：
所述第一表面修整层包括镍/金(Ni/Au)、银(Ag)或铜(Cu)中的一种或多种；
在横截面图中所述第一传导图案的至少部分的表面在所述第一树脂层的主表面下方凹陷；且
所述第一表面修整层基本上与所述第一树脂层的所述主表面共面。
12.根据权利要求10所述的方法，其特征在于，进一步包括：
移除所述第二树脂层的一部分以将所述传导垫暴露于外部；及
形成连接到所述传导垫的第二表面修整层，其中：
所述第二表面修整层包括镍/金(Ni/Au)、银(Ag)或锡(Sn)中的一种或多种；且
所述第二表面修整层基本上与所述第二树脂层的主表面共面。
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