CN105940609B - 缓冲器电路和方法 - Google Patents

缓冲器电路和方法 Download PDF

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Publication number
CN105940609B
CN105940609B CN201580006128.1A CN201580006128A CN105940609B CN 105940609 B CN105940609 B CN 105940609B CN 201580006128 A CN201580006128 A CN 201580006128A CN 105940609 B CN105940609 B CN 105940609B
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China
Prior art keywords
terminal
transistor
voltage
power transformation
voltage shift
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Active
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CN201580006128.1A
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English (en)
Chinese (zh)
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CN105940609A (zh
Inventor
N·Y·何
沈梁国
刘兵
V·F·佩卢索
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Qualcomm Inc
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Qualcomm Inc
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements
    • H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/575—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/618—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series and in parallel with the load as final control devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
CN201580006128.1A 2014-02-03 2015-02-03 缓冲器电路和方法 Active CN105940609B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/171,538 2014-02-03
US14/171,538 US9354649B2 (en) 2014-02-03 2014-02-03 Buffer circuit for a LDO regulator
PCT/US2015/014253 WO2015117130A1 (en) 2014-02-03 2015-02-03 Buffer circuits and methods

Publications (2)

Publication Number Publication Date
CN105940609A CN105940609A (zh) 2016-09-14
CN105940609B true CN105940609B (zh) 2018-12-04

Family

ID=52463240

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580006128.1A Active CN105940609B (zh) 2014-02-03 2015-02-03 缓冲器电路和方法

Country Status (6)

Country Link
US (1) US9354649B2 (enExample)
EP (1) EP3103196B1 (enExample)
JP (1) JP6545692B2 (enExample)
KR (1) KR102277392B1 (enExample)
CN (1) CN105940609B (enExample)
WO (1) WO2015117130A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9354649B2 (en) * 2014-02-03 2016-05-31 Qualcomm, Incorporated Buffer circuit for a LDO regulator
US9893728B2 (en) * 2015-06-09 2018-02-13 Mediatek Inc. Wideband highly-linear low output impedance D2S buffer circuit
GB2557222A (en) * 2016-11-30 2018-06-20 Nordic Semiconductor Asa Voltage regulator
US10013010B1 (en) * 2017-01-05 2018-07-03 Qualcomm Incorporated Voltage droop mitigation circuit for power supply network
US10256813B2 (en) * 2017-04-26 2019-04-09 Qualcomm Incorporated Fast transient high-side gate driving circuit
CN108153372A (zh) * 2018-01-10 2018-06-12 德淮半导体有限公司 调节器
US11550349B2 (en) * 2018-10-31 2023-01-10 Rohm Co., Ltd. Linear power supply circuit
US10359796B1 (en) * 2018-12-17 2019-07-23 Novatek Microelectronics Corp. Buffer circuit for enhancing bandwidth of voltage regulator and voltage regulator using the same
WO2022054192A1 (ja) * 2020-09-10 2022-03-17 三菱電機株式会社 増幅回路、および、複合回路
US11687104B2 (en) * 2021-03-25 2023-06-27 Qualcomm Incorporated Power supply rejection enhancer
TWI831244B (zh) * 2022-06-15 2024-02-01 瑞昱半導體股份有限公司 低壓差穩壓器及其運作方法
CN115903984B (zh) * 2022-12-21 2023-08-04 桂林海纳德半导体科技有限公司 一种自适应型超级源跟随电路及ldo稳压芯片
TWI879130B (zh) * 2023-10-04 2025-04-01 瑞昱半導體股份有限公司 低壓差穩壓器及電容補償方法
CN119225461B (zh) * 2024-09-24 2025-09-19 上海概伦电子股份有限公司 适用于大压差的数字ldo电路及其稳压方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201527594U (zh) * 2009-05-03 2010-07-14 南京微盟电子有限公司 一种超低压差以及大驱动能力的线性稳压器
CN103618543A (zh) * 2013-11-25 2014-03-05 苏州贝克微电子有限公司 一种ttl电平输入的高速cmos缓冲器

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782306A (en) * 1987-03-18 1988-11-01 Zdzislaw Gulczynski Power amplifier
US4825174A (en) * 1988-06-20 1989-04-25 American Telephone And Telegraph Company, At&T Bell Laboratories Symmetric integrated amplifier with controlled DC offset voltage
JPH0379121A (ja) 1989-08-23 1991-04-04 Hitachi Ltd 半導体集積回路装置
JPH03196670A (ja) 1989-12-26 1991-08-28 Fujitsu Ltd 出力回路
US5861736A (en) * 1994-12-01 1999-01-19 Texas Instruments Incorporated Circuit and method for regulating a voltage
US5955893A (en) * 1996-12-16 1999-09-21 Macronix International Co., Ltd. Power saving buffer circuit buffer bias voltages
US6046577A (en) * 1997-01-02 2000-04-04 Texas Instruments Incorporated Low-dropout voltage regulator incorporating a current efficient transient response boost circuit
JP4087540B2 (ja) * 1998-12-28 2008-05-21 富士通株式会社 プッシュプル型増幅回路
JP3801412B2 (ja) * 2000-03-27 2006-07-26 松下電器産業株式会社 Ｍｏｓレギュレータ回路
US6246221B1 (en) 2000-09-20 2001-06-12 Texas Instruments Incorporated PMOS low drop-out voltage regulator using non-inverting variable gain stage
US6501305B2 (en) 2000-12-22 2002-12-31 Texas Instruments Incorporated Buffer/driver for low dropout regulators
JP3675371B2 (ja) * 2001-06-27 2005-07-27 株式会社デンソー 電圧レギュレータ
EP1376867A1 (en) 2002-06-19 2004-01-02 Alcatel Differential high speed cmos to ecl logic converter
US7656224B2 (en) 2005-03-16 2010-02-02 Texas Instruments Incorporated Power efficient dynamically biased buffer for low drop out regulators
KR20070076173A (ko) * 2006-01-18 2007-07-24 엘지이노텍 주식회사 드롭퍼 회로
JP4174531B2 (ja) * 2006-06-28 2008-11-05 エルピーダメモリ株式会社 レベル変換回路及びこれを有する半導体装置
TW200903988A (en) * 2007-07-03 2009-01-16 Holtek Semiconductor Inc Low drop-out voltage regulator with high-performance linear and load regulation
US7755338B2 (en) * 2007-07-12 2010-07-13 Qimonda North America Corp. Voltage regulator pole shifting method and apparatus
KR100865852B1 (ko) 2007-08-08 2008-10-29 주식회사 하이닉스반도체 레귤레이터 및 고전압 발생기
EP2328056B1 (en) * 2009-11-26 2014-09-10 Dialog Semiconductor GmbH Low-dropout linear regulator (LDO), method for providing an LDO and method for operating an LDO
US8390491B2 (en) * 2011-01-14 2013-03-05 Analog Devices, Inc. Buffer to drive reference voltage
JP5487131B2 (ja) * 2011-02-02 2014-05-07 株式会社東芝 差動出力バッファ
US8841943B2 (en) * 2011-05-27 2014-09-23 Texas Instruments Incorporated Current driver damping circuit
JP5799826B2 (ja) * 2012-01-20 2015-10-28 トヨタ自動車株式会社 ボルテージレギュレータ
US9354649B2 (en) * 2014-02-03 2016-05-31 Qualcomm, Incorporated Buffer circuit for a LDO regulator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201527594U (zh) * 2009-05-03 2010-07-14 南京微盟电子有限公司 一种超低压差以及大驱动能力的线性稳压器
CN103618543A (zh) * 2013-11-25 2014-03-05 苏州贝克微电子有限公司 一种ttl电平输入的高速cmos缓冲器

Also Published As

Publication number Publication date
KR102277392B1 (ko) 2021-07-13
EP3103196A1 (en) 2016-12-14
JP2017506032A (ja) 2017-02-23
CN105940609A (zh) 2016-09-14
KR20160115947A (ko) 2016-10-06
WO2015117130A1 (en) 2015-08-06
US20150220094A1 (en) 2015-08-06
EP3103196B1 (en) 2021-11-17
US9354649B2 (en) 2016-05-31
JP6545692B2 (ja) 2019-07-17

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