CN105873881A - 氧化物烧结体、该烧结体的制造方法及溅射靶 - Google Patents

氧化物烧结体、该烧结体的制造方法及溅射靶 Download PDF

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Publication number
CN105873881A
CN105873881A CN201480070391.2A CN201480070391A CN105873881A CN 105873881 A CN105873881 A CN 105873881A CN 201480070391 A CN201480070391 A CN 201480070391A CN 105873881 A CN105873881 A CN 105873881A
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sintered body
oxide
thin film
phase
powder
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Chinese (zh)
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笘井重和
井上吉
井上一吉
江端晃
江端一晃
柴田雅敏
宇都野太
霍间勇辉
石原悠
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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Priority to CN202211043880.1A priority Critical patent/CN115340360B/zh
Publication of CN105873881A publication Critical patent/CN105873881A/zh
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CN201480070391.2A 2013-12-27 2014-12-18 氧化物烧结体、该烧结体的制造方法及溅射靶 Pending CN105873881A (zh)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109279893A (zh) * 2018-08-22 2019-01-29 吉林建筑大学 钬铥双掺钆镓石榴石激光透明陶瓷制备方法
CN109641757A (zh) * 2016-08-31 2019-04-16 出光兴产株式会社 新型石榴石型化合物、含有该化合物的烧结体以及溅射靶
CN110536876A (zh) * 2017-04-17 2019-12-03 信越化学工业株式会社 顺磁性石榴石型透明陶瓷、磁光材料和磁光器件
CN110678433A (zh) * 2017-03-30 2020-01-10 出光兴产株式会社 石榴石化合物、氧化物烧结体、氧化物半导体薄膜、薄膜晶体管、电子设备以及图像传感器
CN113195434A (zh) * 2018-12-28 2021-07-30 出光兴产株式会社 烧结体

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017546A1 (ja) * 2014-08-01 2016-02-04 住友金属鉱山株式会社 酸化インジウム系酸化物焼結体とその製造方法
KR102530123B1 (ko) * 2015-07-30 2023-05-08 이데미쓰 고산 가부시키가이샤 결정질 산화물 반도체 박막, 결정질 산화물 반도체 박막의 제조 방법 및 박막 트랜지스터
JP2017178740A (ja) * 2016-03-31 2017-10-05 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
CN109311756B (zh) * 2016-06-17 2022-07-22 出光兴产株式会社 氧化物烧结体以及溅射靶
WO2018066547A1 (ja) * 2016-10-04 2018-04-12 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
WO2018143073A1 (ja) * 2017-02-01 2018-08-09 出光興産株式会社 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置
JP6397592B1 (ja) 2017-10-02 2018-09-26 住友化学株式会社 スパッタリングターゲットの製造方法およびスパッタリングターゲット
US12205992B2 (en) * 2019-03-28 2025-01-21 Idemitsu Kosan Co., Ltd. Crystalline oxide thin film, multilayer body and thin film transistor
TWI719820B (zh) * 2020-01-31 2021-02-21 光洋應用材料科技股份有限公司 銦鋯氧化物靶材及其製法及銦鋯氧化物薄膜
CN113072091B (zh) * 2021-03-25 2022-05-20 南昌航空大学 一种五元铈钕钇基高熵稀土氧化物及其制备方法
KR20240073052A (ko) 2021-10-14 2024-05-24 이데미쓰 고산 가부시키가이샤 결정 산화물 박막, 적층체 및 박막 트랜지스터
KR20250165360A (ko) * 2023-03-29 2025-11-25 이데미쓰 고산 가부시키가이샤 산화물 소결체, 스퍼터링 타깃, 산화물 박막, 박막 트랜지스터, 및 전자 기기

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102159517A (zh) * 2008-09-19 2011-08-17 出光兴产株式会社 氧化物烧结体及溅射靶材
JP2011222557A (ja) * 2010-04-02 2011-11-04 Idemitsu Kosan Co Ltd 酸化物半導体の成膜方法
JP2013129566A (ja) * 2011-12-21 2013-07-04 Tosoh Corp 複合酸化物焼結体、ターゲット、酸化物透明導電膜及びその製法
JP2013147423A (ja) * 2008-06-06 2013-08-01 Idemitsu Kosan Co Ltd 酸化物薄膜用スパッタリングターゲットおよびその製造法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3806521B2 (ja) * 1998-08-27 2006-08-09 旭硝子セラミックス株式会社 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体
JP4611198B2 (ja) * 2003-03-04 2011-01-12 Jx日鉱日石金属株式会社 光情報記録媒体用の非晶質性保護膜を形成するためのスパッタリングターゲット、光情報記録媒体用の非晶質性保護膜及びその製造方法
JP4628685B2 (ja) * 2004-02-17 2011-02-09 Jx日鉱日石金属株式会社 光情報記録媒体用スパッタリングターゲット及び光情報記録媒体
JP5089386B2 (ja) 2005-07-15 2012-12-05 出光興産株式会社 In・Sm酸化物系スパッタリングターゲット
JP4944408B2 (ja) * 2005-08-09 2012-05-30 キヤノン株式会社 酸化物蛍光体、発光素子及び表示装置
JP5016831B2 (ja) * 2006-03-17 2012-09-05 キヤノン株式会社 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置
JP5237558B2 (ja) 2007-01-05 2013-07-17 出光興産株式会社 スパッタリングターゲット及び酸化物半導体膜
JP5237557B2 (ja) 2007-01-05 2013-07-17 出光興産株式会社 スパッタリングターゲット及びその製造方法
JP5244327B2 (ja) 2007-03-05 2013-07-24 出光興産株式会社 スパッタリングターゲット
CN101680081B (zh) * 2007-03-20 2012-10-31 出光兴产株式会社 溅射靶、氧化物半导体膜及半导体器件
CN103030381B (zh) * 2007-07-06 2015-05-27 住友金属矿山株式会社 氧化物烧结体及其制造方法、靶、使用该靶得到的透明导电膜以及透明导电性基材
JP2009115916A (ja) * 2007-11-02 2009-05-28 Fdk Corp 磁気光学デバイス
JP2010047829A (ja) * 2008-08-20 2010-03-04 Toyoshima Seisakusho:Kk スパッタリングターゲットおよびその製造方法
JP5438011B2 (ja) * 2008-08-27 2014-03-12 出光興産株式会社 スパッタリングターゲット及びそれからなる酸化物半導体薄膜
CN103204674A (zh) * 2008-12-15 2013-07-17 出光兴产株式会社 氧化铟系烧结体及溅射靶
WO2010140548A1 (ja) * 2009-06-05 2010-12-09 Jx日鉱日石金属株式会社 酸化物焼結体、その製造方法及び酸化物焼結体製造用原料粉末
EP2952493B1 (en) * 2009-08-05 2017-03-15 Sumitomo Metal Mining Co., Ltd. Oxide sintered body, production method therefor, target, and transparent conductive film
JP5817327B2 (ja) * 2010-09-29 2015-11-18 東ソー株式会社 酸化物焼結体、その製造方法、それを用いて得られる酸化物透明導電膜及び太陽電池
JP2012144410A (ja) 2011-01-14 2012-08-02 Kobelco Kaken:Kk 酸化物焼結体およびスパッタリングターゲット
KR20140003315A (ko) * 2011-06-08 2014-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
JP5327282B2 (ja) * 2011-06-24 2013-10-30 住友金属鉱山株式会社 透明導電膜製造用焼結体ターゲット
CN109311756B (zh) * 2016-06-17 2022-07-22 出光兴产株式会社 氧化物烧结体以及溅射靶

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013147423A (ja) * 2008-06-06 2013-08-01 Idemitsu Kosan Co Ltd 酸化物薄膜用スパッタリングターゲットおよびその製造法
CN102159517A (zh) * 2008-09-19 2011-08-17 出光兴产株式会社 氧化物烧结体及溅射靶材
JP2011222557A (ja) * 2010-04-02 2011-11-04 Idemitsu Kosan Co Ltd 酸化物半導体の成膜方法
JP2013129566A (ja) * 2011-12-21 2013-07-04 Tosoh Corp 複合酸化物焼結体、ターゲット、酸化物透明導電膜及びその製法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109641757A (zh) * 2016-08-31 2019-04-16 出光兴产株式会社 新型石榴石型化合物、含有该化合物的烧结体以及溅射靶
US11447398B2 (en) 2016-08-31 2022-09-20 Idemitsu Kosan Co., Ltd. Garnet compound, sintered body and sputtering target containing same
US11987504B2 (en) 2016-08-31 2024-05-21 Idemitsu Kosan Co., Ltd. Garnet compound, sintered body and sputtering target containing same
CN110678433A (zh) * 2017-03-30 2020-01-10 出光兴产株式会社 石榴石化合物、氧化物烧结体、氧化物半导体薄膜、薄膜晶体管、电子设备以及图像传感器
US11447421B2 (en) 2017-03-30 2022-09-20 Idemitsu Kosan Co., Ltd. Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor
TWI803487B (zh) * 2017-03-30 2023-06-01 日本商出光興產股份有限公司 氧化物燒結體、濺鍍靶、氧化物半導體薄膜、薄膜電晶體、及電子機器
CN110536876A (zh) * 2017-04-17 2019-12-03 信越化学工业株式会社 顺磁性石榴石型透明陶瓷、磁光材料和磁光器件
CN110536876B (zh) * 2017-04-17 2022-06-14 信越化学工业株式会社 顺磁性石榴石型透明陶瓷、磁光材料和磁光器件
CN109279893A (zh) * 2018-08-22 2019-01-29 吉林建筑大学 钬铥双掺钆镓石榴石激光透明陶瓷制备方法
CN113195434A (zh) * 2018-12-28 2021-07-30 出光兴产株式会社 烧结体
CN113195434B (zh) * 2018-12-28 2023-08-08 出光兴产株式会社 烧结体

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