CN105789120A - Tft基板的制作方法及tft基板 - Google Patents

Tft基板的制作方法及tft基板 Download PDF

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Publication number
CN105789120A
CN105789120A CN201610345315.9A CN201610345315A CN105789120A CN 105789120 A CN105789120 A CN 105789120A CN 201610345315 A CN201610345315 A CN 201610345315A CN 105789120 A CN105789120 A CN 105789120A
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China
Prior art keywords
grid
active layer
tft
hole
gate insulator
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Granted
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CN201610345315.9A
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CN105789120B (zh
Inventor
周志超
夏慧
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201610345315.9A priority Critical patent/CN105789120B/zh
Priority to PCT/CN2016/086849 priority patent/WO2017201791A1/zh
Priority to US15/115,914 priority patent/US10297692B2/en
Publication of CN105789120A publication Critical patent/CN105789120A/zh
Priority to US16/278,718 priority patent/US11114567B2/en
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Publication of CN105789120B publication Critical patent/CN105789120B/zh
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Abstract

本发明提供一种TFT基板的制作方法及TFT基板。本发明的TFT基板的制作方法，采用双栅极结构，所述双栅极在有源层两侧对称分布，能有效防止TFT阈值电压的变动，提升TFT的开关特性；同时通过先制作有源层后制作栅极绝缘层，使栅极绝缘层直接生长于有源层上，改善了栅极绝缘层与有源层的接触界面，进一步提升TFT的开关特性。本发明的TFT基板，区别于传统的底栅或顶栅结构的TFT基板，使栅极在竖直方向上位于源极和像素电极之间，并且采用对称于有源层的双栅极结构，能有效防止TFT阈值电压的变动，提升TFT的开关特性；同时改善了栅极绝缘层与有源层的接触界面，进一步提升TFT的开关特性。

Description

TFT基板的制作方法及TFT基板
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板的制作方法及TFT基板。
背景技术
随着显示技术的发展，液晶显示器(LiquidCrystalDisplay，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlightmodule)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜(CF，ColorFilter)基板、薄膜晶体管(TFT，ThinFilmTransistor)基板、及夹设于彩膜基板与薄膜晶体管基板之间的液晶(LC，LiquidCrystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)、及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
在液晶显示面板工业中，目前的TFT基板常采用单一栅极结构，而单一栅极结构的TFT基板在较长时间的工作后其载流子运输特性会发生变化，具体体现在其阈值电压会随工作时间的延长而发生正向偏移或是负向偏移，从而影响TFT的开关特性。
发明内容
本发明的目的在于提供一种TFT基板的制作方法，能有效防止TFT阈值电压的变动，并改善栅极绝缘层与有源层的接触界面，提升TFT的开关特性。
本发明的目的还在于提供一种TFT基板，能有效防止TFT阈值电压的变动，并改善栅极绝缘层与有源层的接触界面，提升TFT的开关特性。
为实现上述目的，本发明首先提供一种TFT基板的制作方法，包括如下步骤：
步骤1、提供一衬底基板，在所述衬底基板上形成数据线、及与数据线相连的源极；
步骤2、形成有源层，所述有源层至少部分位于所述源极上；
步骤3、在所述有源层、源极、及衬底基板上形成栅极绝缘层，对所述栅极绝缘层进行图形化处理，在所述栅极绝缘层上形成对应于所述有源层的第一通孔；
步骤4、形成第一栅极、第二栅极、及漏极，所述第一栅极、及第二栅极均位于栅极绝缘层上，且分别对应于所述有源层的两侧，所述漏极至少部分位于所述第一通孔内并通过第一通孔与所述有源层相连；
步骤5、在所述漏极、第一栅极、第二栅极、及栅极绝缘层上形成钝化层，对所述钝化层进行图形化处理，在所述钝化层上形成对应于漏极的第二通孔；
步骤6、形成像素电极，所述像素电极至少部分位于所述第二通孔内并通过第二通孔与漏极相连。
所述步骤1包括：采用物理气相沉积方法在所述衬底基板上沉积第一金属层，采用一道光刻制程对所述第一金属层进行图形化处理后得到数据线、及与数据线相连的源极；所述光刻制程包括涂光阻、曝光、显影、及湿蚀刻制程；
所述步骤2包括：采用化学或物理气相沉积方法在所述衬底基板、数据线、及源极上沉积半导体层，采用一道光刻制程对所述半导体层进行图形化处理后得到对应于源极上方的有源层；所述光刻制程包括涂光阻、曝光、显影、及蚀刻制程；
所述数据线、及源极的材料包括钼、钛、铝、铜中的一种或多种；
所述有源层的材料为非晶硅、多晶硅、或金属氧化物半导体。
所述步骤3包括：采用化学气相沉积方法在所述有源层、源极、数据线、及衬底基板上沉积第一绝缘层，采用一道光刻制程对所述第一绝缘层进行图形化处理后得到对应于有源层的第一通孔，形成栅极绝缘层；所述光刻制程包括涂光阻、曝光、显影、及干蚀刻制程；
所述栅极绝缘层的材料包括氧化硅、氮化硅中的一种或多种。
所述步骤4包括：采用物理气相沉积方法在所述栅极绝缘层上沉积第二金属层，采用一道光刻制程对所述第二金属层进行图形化处理后得到漏极、第一栅极、及第二栅极；所述光刻制程包括涂光阻、曝光、显影、及湿蚀刻制程；
所述漏极、及第一、第二栅极的材料包括钼、钛、铝、铜中的一种或多种。
本发明还提供一种阵列基板，包括：衬底基板、设于所述衬底基板上的源极、以及设于所述源极上方的有源层、栅极绝缘层、第一栅极、第二栅极、漏极、钝化层和像素电极，其中，
所述栅极绝缘层上开设有第一通孔，所述漏极至少部分位于所述第一通孔内并通过所述第一通孔与所述有源层相连；所述栅极绝缘层与所述钝化层之间设置有第一栅极和第二栅极，所述第一栅极和第二栅极分设于所述有源层两侧；
所述钝化层上开设有第二通孔，所述像素电极通过所述第二通孔与漏极相连。
所述衬底基板上设有数据线，所述数据线与所述源极相连并与所述源极同层设置。
所述第一通孔位于所述有源层上方，所述漏极在衬底基板上的正投影完全覆盖所述有源层在衬底基板上的正投影。
所述第一栅极和所述第二栅极在竖直方向上的位置与所述有源层在竖直方向上的位置至少部分重叠。
所述第二通孔位于所述漏极上方，所述像素电极在衬底基板上的正投影完全覆盖所述漏极与有源层在衬底基板上的正投影。
所述第一栅极和第二栅极的形状、尺寸相同，在竖直方向上的位置相同，在水平方向上与有源层的间隔距离相同。
本发明的有益效果：本发明提供的TFT基板的制作方法，采用双栅极结构，所述双栅极在有源层两侧对称分布，能有效防止TFT阈值电压的变动，提升TFT的开关特性；同时通过先制作有源层后制作栅极绝缘层，使栅极绝缘层直接生长于有源层上，改善了栅极绝缘层与有源层的接触界面，进一步提升TFT的开关特性。本发明提供的TFT基板，区别于传统的底栅或顶栅结构的TFT基板，使栅极在竖直方向上位于源极和像素电极之间，并且采用对称于有源层的双栅极结构，能有效防止TFT阈值电压的变动，提升TFT的开关特性；同时改善了栅极绝缘层与有源层的接触界面，进一步提升TFT的开关特性。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的TFT基板的制作方法的流程图；
图2A-2B为本发明的TFT基板的制作方法的步骤1的示意图；
图2C为图2B的俯视示意图；
图3A-3B为本发明的TFT基板的制作方法的步骤2的示意图；
图3C为图3B的俯视示意图；
图4A-4B为本发明的TFT基板的制作方法的步骤3的示意图；
图4C为图4B的俯视示意图；
图5A-5B为本发明的TFT基板的制作方法的步骤4的示意图；
图5C为图5B的俯视示意图；
图6A-6B为本发明的TFT基板的制作方法的步骤5的示意图；
图6C为图6B的俯视示意图；
图7A-7B为本发明的TFT基板的制作方法的步骤6的示意图；
图7C为图7B的俯视示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤1、如图2A-2C所示，提供一衬底基板10，在所述衬底基板10上形成数据线21、及与数据线21相连的源极22。
具体的，所述步骤1包括：采用物理气相沉积方法(PhysicalVaporDeposition，PVD)在所述衬底基板10上沉积第一金属层15，采用一道光刻制程对所述第一金属层15进行图形化处理后得到数据线21、及与数据线21相连的源极22；所述光刻制程包括涂光阻、曝光、显影、及湿蚀刻制程。
具体的，所述数据线21、及源极22的材料包括钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种。
步骤2、如图3A-3C所示，形成有源层30，所述有源层30至少部分位于所述源极22上。
具体的，所述步骤2包括：采用化学气相沉积方法(ChemicalVaporDeposition，CVD)或物理气相沉积方法在所述衬底基板10、数据线21、及源极22上沉积半导体层25，采用一道光刻制程对所述半导体层25进行图形化处理后得到对应于源极22上方的有源层30；所述光刻制程包括涂光阻、曝光、显影、及蚀刻制程。
具体的，所述有源层30的材料为非晶硅、多晶硅、或金属氧化物半导体。优选的，所述金属氧化物半导体可以为铟镓锌氧化物(IndiumGalliumZincOxide,IGZO)。
所述有源层30的材料为非晶硅或多晶硅时，采用化学气相沉积方法沉积半导体层25，所述光刻制程中的蚀刻制程为干蚀刻制程。
所述有源层30的材料为金属氧化物半导体时，采用物理气相沉积方法沉积半导体层25，所述光刻制程中的蚀刻制程为湿蚀刻制程。
步骤3、如图4A-4C所示，在所述有源层30、源极22、数据线21、及衬底基板10上形成栅极绝缘层40，对所述栅极绝缘层40进行图形化处理，在所述栅极绝缘层40上形成对应于所述有源层30的第一通孔41。
具体的，所述步骤3包括：采用化学气相沉积方法在所述有源层30、源极22、数据线21、及衬底基板10上沉积第一绝缘层35，采用一道光刻制程对所述第一绝缘层35进行图形化处理后得到对应于有源层30的第一通孔41，形成栅极绝缘层40；所述光刻制程包括涂光阻、曝光、显影、及干蚀刻制程。
具体的，所述栅极绝缘层40的材料包括氧化硅(SiOx)、氮化硅(SiNx)中的一种或多种。
步骤4、如图5A-5C所示，形成第一栅极52、第二栅极53、及漏极51，所述第一栅极52、及第二栅极53均位于栅极绝缘层40上，且分别对应于所述有源层30的两侧，所述漏极51至少部分位于所述第一通孔41内并通过第一通孔41与所述有源层30相连。
具体的，所述第一栅极52和第二栅极53在竖直方向上的位置与所述有源层30在竖直方向上的位置至少部分重叠。
优选的，所述第一栅极52与第二栅极53在竖直方向上的位置与所述有源层30在竖直方向上的位置完全重叠。
优选的，所述第一栅极52、第二栅极53的形状、尺寸相同，在竖直方向上的位置相同，在水平方向上与有源层30的间隔距离相同。
优选的，所述漏极51在衬底基板10上的正投影完全覆盖所述有源层30在衬底基板10上的正投影。
具体的，所述步骤4包括：采用物理气相沉积方法在所述栅极绝缘层40上沉积第二金属层45，采用一道光刻制程对所述第二金属层45进行图形化处理后得到漏极51、第一栅极52、及第二栅极53。所述光刻制程包括涂光阻、曝光、显影、及湿蚀刻制程。
具体的，所述漏极51、及第一、第二栅极52、53的材料包括钼、钛、铝、铜中的一种或多种。
步骤5、如图6A-6C所示，在所述漏极51、第一栅极52、第二栅极53、及栅极绝缘层40上形成钝化层60，对所述钝化层60进行图形化处理，在所述钝化层60上形成对应于漏极51上方的第二通孔61。
具体的，所述步骤5包括：采用化学气相沉积方法在所述漏极51、第一栅极52、第二栅极53、及栅极绝缘层40上沉积第二绝缘层55，采用一道光刻制程对所述第二绝缘层55进行图形化处理后得到对应于漏极51的第二通孔61，形成钝化层60。所述光刻制程包括涂光阻、曝光、显影、及干蚀刻制程。
具体的，所述钝化层60的材料包括氧化硅、氮化硅中的一种或多种。
步骤6、如图7A-7C所示，形成像素电极70，所述像素电极70至少部分位于所述第二通孔61内并通过第二通孔61与漏极51相连。
具体的，所述像素电极70在衬底基板10上的正投影完全覆盖所述漏极51与有源层30在衬底基板10上的正投影。
至此，完成TFT基板的制作。
具体的，所述步骤6包括：采用物理气相沉积方法在所述钝化层60上沉积导电层65，采用一道光刻制程对所述导电层65进行图形化处理后得到像素电极70。所述光刻制程包括涂光阻、曝光、显影、及湿蚀刻制程。
具体的，所述像素电极70的材料为金属或导电金属氧化物，所述金属包括钼、钛、铝、铜中的一种或多种，所述导电金属氧化物优选为氧化铟锡(IndiumTinQxide，ITO)。
上述TFT基板的制作方法，采用双栅极结构，所述双栅极在有源层两侧对称分布，使得双栅极对有源层施加电压时，有源层内的电场分布均匀，能有效防止TFT阈值电压的变动，提升TFT的开关特性；同时通过先制作有源层后制作栅极绝缘层，使栅极绝缘层直接生长于有源层上，改善了栅极绝缘层与有源层的接触界面，进一步提升TFT的开关特性。
请参阅图7B-7C，本发明还提供一种TFT基板，包括：衬底基板10、设于所述衬底基板10上的源极22、以及设于所述源极22上方的有源层30、栅极绝缘层40、第一栅极52、第二栅极53、漏极51、钝化层60和像素电极70，其中，
所述栅极绝缘层40上开设有第一通孔41，所述漏极51至少部分位于所述第一通孔41内并通过所述第一通孔41与所述有源层30相连；所述栅极绝缘层40与所述钝化层60之间设置有第一栅极52和第二栅极53，所述第一栅极52和第二栅极53分设于所述有源层30两侧；
所述钝化层60上开设有第二通孔61，所述像素电极70通过所述第二通孔61与漏极51相连。
具体的，所述衬底基板10上设有数据线21，所述数据线21与所述源极22相连并与所述源极22同层设置。
具体的，所述第一通孔41位于所述有源层30上方，所述漏极51在衬底基板10上的正投影完全覆盖所述有源层30在衬底基板10上的正投影。
具体的，所述第一栅极52和所述第二栅极53在竖直方向上的位置与所述有源层30在竖直方向上的位置至少部分重叠。
优选的，所述第一栅极52和所述第二栅极53在竖直方向上的位置与所述有源层30在竖直方向上的位置完全重叠。
具体的，所述第二通孔51位于所述漏极51上方，所述像素电极70在衬底基板10上的正投影完全覆盖所述漏极51与有源层30在衬底基板10上的正投影。
优选的，所述第一栅极52、第二栅极53的形状、尺寸相同，在竖直方向上的位置相同，在水平方向上与有源层30的间隔距离相同。
具体的，所述数据线21、及源极22的材料包括钼、钛、铝、铜中的一种或多种。
具体的，所述有源层30的材料为非晶硅或多晶硅。
具体的，所述栅极绝缘层40的材料包括氧化硅、氮化硅中的一种或多种。
具体的，所述漏极51、及第一、第二栅极53的材料包括钼、钛、铝、铜中的一种或多种。
具体的，所述钝化层60的材料包括氧化硅、氮化硅中的一种或多种。
具体的，所述像素电极70的材料为金属或导电金属氧化物，所述金属包括钼、钛、铝、铜中的一种或多种，所述导电金属氧化物优选为氧化铟锡。
上述TFT基板，区别于传统的底栅或顶栅结构的TFT基板，使栅极在竖直方向上位于源极和像素电极之间，并且采用双栅极结构，所述双栅极在有源层两侧对称分布，使得双栅极对有源层施加电压时，有源层内的电场分布均匀，能有效防止TFT阈值电压的变动，提升TFT的开关特性；同时通过先制作有源层后制作栅极绝缘层的方法，使栅极绝缘层生长于有源层上，改善了栅极绝缘层与有源层的接触界面，进一步提升TFT的开关特性。
综上所述，本发明提供一种TFT基板的制作方法及TFT基板。本发明的TFT基板的制作方法，采用双栅极结构，所述双栅极在有源层两侧对称分布，能有效防止TFT阈值电压的变动，提升TFT的开关特性；同时通过先制作有源层后制作栅极绝缘层，使栅极绝缘层直接生长于有源层上，改善了栅极绝缘层与有源层的接触界面，进一步提升TFT的开关特性。本发明的TFT基板，区别于传统的底栅或顶栅结构的TFT基板，使栅极在竖直方向上位于源极和像素电极之间，并且采用对称于有源层的双栅极结构，能有效防止TFT阈值电压的变动，提升TFT的开关特性；同时改善了栅极绝缘层与有源层的接触界面，进一步提升TFT的开关特性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种TFT基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一衬底基板(10)，在所述衬底基板(10)上形成数据线(21)、及与数据线(21)相连的源极(22)；
步骤2、形成有源层(30)，所述有源层(30)至少部分位于所述源极(22)上；
步骤3、在所述有源层(30)、源极(22)、数据线(21)、及衬底基板(10)上形成栅极绝缘层(40)，对所述栅极绝缘层(40)进行图形化处理，在所述栅极绝缘层(40)上形成对应于所述有源层(30)的第一通孔(41)；
步骤4、形成第一栅极(52)、第二栅极(53)、及漏极(51)，所述第一栅极(52)、及第二栅极(53)均位于栅极绝缘层(40)上，且分别对应于所述有源层(30)的两侧，所述漏极(51)至少部分位于所述第一通孔(41)内并通过第一通孔(41)与所述有源层(30)相连；
步骤5、在所述漏极(51)、第一栅极(52)、第二栅极(53)、及栅极绝缘层(40)上形成钝化层(60)，对所述钝化层(60)进行图形化处理，在所述钝化层(60)上形成对应于漏极(51)的第二通孔(61)；
步骤6、形成像素电极(70)，所述像素电极(70)至少部分位于所述第二通孔(61)内并通过第二通孔(61)与漏极(51)相连。
2.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤1包括：采用物理气相沉积方法在所述衬底基板(10)上沉积第一金属层(15)，采用一道光刻制程对所述第一金属层(15)进行图形化处理后得到数据线(21)、及与数据线(21)相连的源极(22)；所述光刻制程包括涂光阻、曝光、显影、及湿蚀刻制程；
所述步骤2包括：采用化学或物理气相沉积方法在所述衬底基板(10)、数据线(21)、及源极(22)上沉积半导体层(25)，采用一道光刻制程对所述半导体层(25)进行图形化处理后得到对应于源极(22)上方的有源层(30)；所述光刻制程包括涂光阻、曝光、显影、及蚀刻制程；
所述数据线(21)、及源极(22)的材料包括钼、钛、铝、铜中的一种或多种；
所述有源层(30)的材料为非晶硅、多晶硅、或金属氧化物半导体。
3.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤3包括：采用化学气相沉积方法在所述有源层(30)、源极(22)、数据线(21)、及衬底基板(10)上沉积第一绝缘层(35)，采用一道光刻制程对所述第一绝缘层(35)进行图形化处理后得到对应于有源层(30)的第一通孔(41)，形成栅极绝缘层(40)；所述光刻制程包括涂光阻、曝光、显影、及干蚀刻制程；
所述栅极绝缘层(40)的材料包括氧化硅、氮化硅中的一种或多种。
4.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤4包括：采用物理气相沉积方法在所述栅极绝缘层(40)上沉积第二金属层(45)，采用一道光刻制程对所述第二金属层(45)进行图形化处理后得到漏极(51)、第一栅极(52)、及第二栅极(53)；所述光刻制程包括涂光阻、曝光、显影、及湿蚀刻制程；
所述漏极(51)、及第一、第二栅极(52、53)的材料包括钼、钛、铝、铜中的一种或多种。
5.一种阵列基板，其特征在于，包括：衬底基板(10)、设于所述衬底基板(10)上的源极(22)、以及设于所述源极(22)上方的有源层(30)、栅极绝缘层(40)、第一栅极(52)、第二栅极(53)、漏极(51)、钝化层(60)和像素电极(70)，其中，
所述栅极绝缘层(40)上开设有第一通孔(41)，所述漏极(51)至少部分位于所述第一通孔(41)内并通过所述第一通孔(41)与所述有源层(30)相连；所述栅极绝缘层(40)与所述钝化层(60)之间设置有第一栅极(52)和第二栅极(53)，所述第一栅极(52)和第二栅极(53)分设于所述有源层(30)两侧；
所述钝化层(60)上开设有第二通孔(61)，所述像素电极(70)通过所述第二通孔(61)与漏极(51)相连。
6.如权利要求5所述的阵列基板，其特征在于，所述衬底基板(10)上设有数据线(21)，所述数据线(21)与所述源极(22)相连并与所述源极(22)同层设置。
7.如权利要求5所述的阵列基板，其特征在于，所述第一通孔(41)位于所述有源层(30)上方，所述漏极(51)在衬底基板(10)上的正投影完全覆盖所述有源层(30)在衬底基板(10)上的正投影。
8.如权利要求5所述的阵列基板，其特征在于，所述第一栅极(52)和第二栅极(53)在竖直方向上的位置与所述有源层(30)在竖直方向上的位置至少部分重叠。
9.如权利要求5所述的阵列基板，其特征在于，所述第二通孔(51)位于所述漏极(51)上方，所述像素电极(70)在衬底基板(10)上的正投影完全覆盖所述漏极(51)与有源层(30)在衬底基板(10)上的正投影。
10.如权利要求8所述的TFT基板，其特征在于，所述第一栅极(52)和所述第二栅极(53)的形状、尺寸相同，在竖直方向上的位置相同，在水平方向上与有源层(30)的间隔距离相同。
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