CN104952792A - Tft基板结构的制作方法 - Google Patents
Tft基板结构的制作方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 84
- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 239000010409 thin film Substances 0.000 title abstract description 4
- 238000002161 passivation Methods 0.000 claims abstract description 48
- 238000000576 coating method Methods 0.000 claims description 42
- 239000011248 coating agent Substances 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 19
- 239000012212 insulator Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 3
- 238000001035 drying Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 17
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
本发明提供一种TFT基板结构的制作方法,在依次形成第一钝化层、平坦层、及第一透明导电膜之后,先对第一透明导电膜进行图案化处理,形成第一像素电极,之后再采用黄光制程在平坦层上对应漏极上方曝光出第一过孔,然后以平坦层为自对准光罩,采用干法蚀刻制程在第一钝化层上对应第一过孔蚀刻出第二过孔,从而有效防止第一透明导电膜在第一、第二过孔处的残留,提高了生产良率,同时减少一道光罩,避免了由于对位不准造成的开口率降低,提高了生产效率,降低了生产成本,提高了产品价格的竞争力。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种TFT基板结构的制作方法。
背景技术
液晶显示器(Liquid Crystal Display,LCD)包括壳体、设于壳体内的液晶面板及设于壳体内的背光模组。通常液晶面板由一彩色滤光片基板(ColorFilter,CF)、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate,TFT Array Substrate)以及一填充于两基板间的液晶层(Liquid CrystalLayer)所构成。CF基板和TFT基板的相对内侧设有透明电极。液晶显示器通过电场对液晶分子的取向进行控制,改变光的偏振状态,并藉由偏光板实现光路的穿透与阻挡,达到显示的目的。
边缘场开关(Fringe Field Switching,FFS)技术是近年来出现的改善LCD画质的技术之一,能同时实现高穿透性和大视角的要求。图1所示为一种现有FFS型液晶显示面板的TFT基板的剖面结构示意图,其包括基板100、设于所述基板100上的缓冲层200、设于所述缓冲层200上的栅极300、设于所述缓冲层200上覆盖所述栅极300的栅极绝缘层400、设于所述栅极绝缘层400上的岛状导体层500、设于所述栅极绝缘层400上分别与所述岛状导体层500的两侧相接触的源极600与漏极700、设于所述栅极绝缘层400、岛状半导体层500、源极600与漏极700上的第一钝化层800、设于所述第一钝化层800上的平坦层900、设于所述平坦层900上的第一像素电极1000、设于所述平坦层900与第一像素电极1000上的第二钝化层1100、及设于所述第二钝化层1100上的第二像素电极1200;所述第二钝化层1100、平坦层900、及第一钝化层800上对应所述漏极700的上方形成有过孔1300,所述第二像素电极1200经由所述过孔1300与所述漏极700相接触。
请参阅图2至图9,现有FFS型液晶显示面板的TFT基板结构的制作方法包括如下步骤;
步骤1、如图2所示,提供基板100,在所述基板100上沉积缓冲层200;在所述缓冲层200上沉积第一金属层,并对所述第一金属层进行图案化处理,形成栅极300;
步骤2、如图3所示,在所述缓冲层200、及栅极300上沉积栅极绝缘层400;在所述栅极绝缘层400上沉积氧化物半导体层,并对所述氧化物半导体层进行图案化处理,形成岛状半导体层500;
步骤3、如图4所示,在所述栅极绝缘层400、及岛状半导体层500上沉积第二金属层,并对所述第二金属层进行图案化处理,得到源极600、及漏极700;
步骤4、如图5所示,在所述栅极绝缘层400、岛状半导体层500、源极600、及漏极700上沉积第一钝化层800,并在所述第一钝化层800上对应所述漏极700上方形成第一过孔810;
步骤5、如图6所示,在所述第一钝化层800上形成平坦层900,并在所述平坦层900上对应所述第一过孔810上方形成第二过孔910;
步骤6、如图7所示,在所述平坦层900上沉积第一透明导电膜,并在所述第一透明导电膜上涂布光阻层1101;
由于第一、第二过孔810、910较深,因此光阻层1101容易在所述第一、第二过孔810、910内堆积;
步骤7、如图8所示,对所述光阻层1101进行曝光、显影;
具体的,在曝光、显影时,堆积在所述第一、第二过孔810、910内的光阻层1101容易显影不完全,造成光阻层1101在第一、第二过孔810、910处残留;
步骤8、如图9所示,以所述光阻层1101为遮蔽层,对没有被所述光阻层1101遮挡的第一透明导电膜进行蚀刻处理,得到第一像素电极1000;
由于位于所述第一、第二过孔810、910内的第一透明导电膜上覆盖有残留光阻,因此在蚀刻过程中无法被完全蚀刻掉,从而造成所述第一透明导电膜在第一、第二过孔810、910处残留,因而会影响后续制程,对TFT基板的品质造成不良影响。
因此,基于现有制作方法中存在的问题和缺陷,有必要提供一种改进的TFT基板结构的制作方法,以解决现有技术所存在的问题。
发明内容
本发明的目的在于提供一种TFT基板结构的制作方法,能有效防止第一透明导电膜在过孔处的残留,提高TFT基板的生产良率。
为实现上述目的,本发明提供一种TFT基板的制作方法,包括如下步骤;
步骤1、提供基板,在所述基板上沉积缓冲层;在所述缓冲层上沉积第一金属层,并对所述第一金属层进行图案化处理,形成栅极;
步骤2、在所述缓冲层、及栅极上沉积栅极绝缘层;在所述栅极绝缘层上沉积氧化物半导体层,并对所述氧化物半导体层进行图案化处理,形成岛状半导体层;
步骤3、在所述栅极绝缘层、及岛状半导体层上沉积第二金属层,并对所述第二金属层进行图案化处理,得到源极、及漏极;
步骤4、在所述栅极绝缘层、岛状半导体层、源极、及漏极上沉积第一钝化层;
步骤5、在所述第一钝化层上形成平坦层;
步骤6、在所述平坦层上沉积第一透明导电膜,并对所述第一透明导电膜进行图案化处理,形成第一像素电极;
步骤7、在所述第一钝化层、及平坦层上对应所述漏极的上方依次形成第一过孔、及第二过孔,所述第一过孔、及第二过孔暴露出部分漏极;
步骤8、在所述第一像素电极及平坦层上沉积第二钝化层,并对所述第二钝化层进行图案化处理,在所述第二钝化层上形成一对应于所述第一过孔与第二过孔的第三过孔;
步骤9、在所述第二钝化层上沉积第二透明导电膜,并对所述第二透明导电膜进行图案化处理,形成第二像素电极,所述第二像素电极经由第一、第二、第三过孔与漏极相连。
所述氧化物半导体层的材料为IGZO。
所述步骤4采用化学气相沉积法沉积所述第一钝化层。
所述步骤5采用涂布制程形成所述平坦层;所述平坦层的材料为PFA。
所述步骤6采用物理气相沉积法沉积所述第一透明导电膜;采用湿法蚀刻制程形成所述第一像素电极。
所述步骤7先采用黄光制程在所述平坦层上对应所述漏极上方曝光出第一过孔,然后以所述平坦层为自对准光罩,采用干法蚀刻制程在所述第一钝化层上对应所述第一过孔蚀刻出第二过孔。
所述栅极的材料为钼、钛、铝和铜中的一种或多种的堆栈组合。
所述源极与漏极的材料为钼、钛、铝和铜中的一种或多种的堆栈组合。
所述栅极绝缘层、第一钝化层、及第二钝化层的材料为氧化硅、氮化硅、或二者的堆栈组合。
所述第一像素电极、及第二像素电极的材料均为ITO。
本发明的有益效果:本发明的TFT基板结构的制作方法,在依次形成第一钝化层、平坦层、及第一透明导电膜之后,先对第一透明导电膜进行图案化处理,形成第一像素电极,之后再采用黄光制程在平坦层上对应漏极上方曝光出第一过孔,然后以平坦层为自对准光罩,采用干法蚀刻制程在第一钝化层上对应第一过孔蚀刻出第二过孔,从而有效防止第一透明导电膜在第一、第二过孔处的残留,提高了生产良率,同时减少一道光罩,避免了由于对位不准造成的开口率降低,提高了生产效率,降低了生产成本,提高了产品价格的竞争力。
附图说明
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图中,
图1为一种现有的TFT基板的剖面结构示意图;
图2为现有的TFT基板结构的制作方法的步骤1的示意图;
图3为现有的TFT基板结构的制作方法的步骤2的示意图;
图4为现有的TFT基板结构的制作方法的步骤3的示意图;
图5为现有的TFT基板结构的制作方法的步骤4的示意图;
图6为现有的TFT基板结构的制作方法的步骤5的示意图;
图7为现有的TFT基板结构的制作方法的步骤6的示意图;
图8为现有的TFT基板结构的制作方法的步骤7的示意图;
图9为现有的TFT基板结构的制作方法的步骤8的示意图;
图10为本发明的TFT基板结构的制作方法的流程图;
图11为本发明的TFT基板结构的制作方法的步骤1的示意图;
图12为本发明的TFT基板结构的制作方法的步骤2的示意图;
图13为本发明的TFT基板结构的制作方法的步骤3的示意图;
图14为本发明的TFT基板结构的制作方法的步骤4的示意图;
图15为本发明的TFT基板结构的制作方法的步骤5的示意图;
图16至图17为本发明的TFT基板结构的制作方法的步骤6的示意图;
图18为本发明的TFT基板结构的制作方法的步骤7的示意图;
图19为本发明的TFT基板结构的制作方法的步骤8的示意图;
图20为本发明的TFT基板结构的制作方法的步骤9的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图10,本发明提供一种TFT基板结构的制作方法,包括如下步骤;
步骤1、如图11所示,提供基板1,在所述基板1上沉积缓冲层2;在所述缓冲层2上沉积第一金属层,并对所述第一金属层进行图案化处理,形成栅极3。
优选的,所述栅极3的材料为钼、钛、铝和铜中的一种或多种的堆栈组合。
步骤2、如图12所示,在所述缓冲层2、及栅极3上沉积栅极绝缘层4;在所述栅极绝缘层4上沉积氧化物半导体层,并对所述氧化物半导体层进行图案化处理,形成岛状半导体层5。
优选的,所述栅极绝缘层4的材料为氧化硅、氮化硅、或二者的堆栈组合。
具体的,所述岛状半导体层5的材料为IGZO(Indium Gallium ZincOxide,氧化铟镓锌)。
步骤3、如图13所示,在所述栅极绝缘层4、及岛状半导体层5上沉积第二金属层,并对所述第二金属层进行图案化处理,得到源极6、及漏极7。所述源极6、及漏极7分别与所述岛状半导体层5的两侧相接触。
优选的,所述源极6与漏极7的材料为钼、钛、铝和铜中的一种或多种的堆栈组合。
步骤4、如图14示,在所述栅极绝缘层4、岛状半导体层5、源极6、及漏极7上沉积第一钝化层8。
具体的,采用化学气相沉积法(CVD)沉积所述第一钝化层8。
优选的,所述第一钝化层8的材料为氧化硅、氮化硅、或二者的堆栈组合。
步骤5、如图15所示,在所述第一钝化层8上形成平坦层9。
具体的,采用涂布制程(Coating)形成所述平坦层9;所述平坦层9的材料为PFA(可溶性聚四氟乙烯)。
步骤6、如图16、图17所示,在所述平坦层9上沉积第一透明导电膜,并对所述第一透明导电膜进行图案化处理,形成第一像素电极10。
具体的,采用物理气相沉积法(PVD)沉积所述第一透明导电膜;采用湿法蚀刻(Wet Etch)制程形成所述第一像素电极10;所述第一像素电极10的材料为ITO(氧化铟锡)。
步骤7、如图18所示,在所述第一钝化层8、及平坦层9上对应所述漏极7的上方依次形成第一过孔91、及第二过孔92,所述第一过孔91、及第二过孔92暴露出部分漏极7。
具体的,先采用黄光制程在所述平坦层9上对应所述漏极7上方曝光出第一过孔91,然后以所述平坦层9为自对准光罩,采用干法蚀刻(DryEtch)制程在所述第一钝化层8上对应所述第一过孔91蚀刻出第二过孔92。
步骤8、如图19所示,在所述第一像素电极10及平坦层9上沉积第二钝化层11,并对所述第二钝化层11进行图案化处理,在所述第二钝化层11上形成一对应于所述第一过孔91与第二过孔92的第三过孔93。
优选的,所述第二钝化层11的材料为氧化硅、氮化硅、或二者的堆栈组合。
步骤9、如图20所示,在所述第二钝化层11上沉积第二透明导电膜,并对所述第二透明导电膜进行图案化处理,形成第二像素电极12,所述第二像素电极12经由第一、第二、第三过孔91、92、93与漏极7相连。
优选的,所述第一像素电极12的材料为ITO(氧化铟锡)。
综上所述,本发明的TFT基板结构的制作方法,在依次形成第一钝化层、平坦层、及第一透明导电膜之后,先对第一透明导电膜进行图案化处理,形成第一像素电极,之后再采用黄光制程在平坦层上对应漏极上方曝光出第一过孔,然后以平坦层为自对准光罩,采用干法蚀刻制程在第一钝化层上对应第一过孔蚀刻出第二过孔,从而有效防止第一透明导电膜在第一、第二过孔处的残留,提高了生产良率,同时减少一道光罩,避免了由于对位不准造成的开口率降低,提高了生产效率,降低了生产成本,提高了产品价格的竞争力。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (10)
1.一种TFT基板结构的制作方法,其特征在于,包括如下步骤;
步骤1、提供基板(1),在所述基板(1)上沉积缓冲层(2);在所述缓冲层(2)上沉积第一金属层,并对所述第一金属层进行图案化处理,形成栅极(3);
步骤2、在所述缓冲层(2)、及栅极(3)上沉积栅极绝缘层(4);在所述栅极绝缘层(4)上沉积氧化物半导体层,并对所述氧化物半导体层进行图案化处理,形成岛状半导体层(5);
步骤3、在所述栅极绝缘层(4)、及岛状半导体层(5)上沉积第二金属层,并对所述第二金属层进行图案化处理,得到源极(6)、及漏极(7);
步骤4、在所述栅极绝缘层(4)、岛状半导体层(5)、源极(6)、及漏极(7)上沉积第一钝化层(8);
步骤5、在所述第一钝化层(8)上形成平坦层(9);
步骤6、在所述平坦层(9)上沉积第一透明导电膜,并对所述第一透明导电膜进行图案化处理,形成第一像素电极(10);
步骤7、在所述第一钝化层(8)、及平坦层(9)上对应所述漏极(7)的上方依次形成第一过孔(91)、及第二过孔(92),所述第一过孔(91)、及第二过孔(92)暴露出部分漏极(7);
步骤8、在所述第一像素电极(10)及平坦层(9)上沉积第二钝化层(11),并对所述第二钝化层(11)进行图案化处理,在所述第二钝化层(11)上形成一对应于所述第一过孔(91)与第二过孔(92)的第三过孔(93);
步骤9、在所述第二钝化层(11)上沉积第二透明导电膜,并对所述第二透明导电膜进行图案化处理,形成第二像素电极(12),所述第二像素电极(12)经由第一、第二、第三过孔(91、92、93)与漏极(7)相连。
2.如权利要求1所述的TFT基板结构的制作方法,其特征在于,所述氧化物半导体层(5)的材料为IGZO。
3.如权利要求1所述的TFT基板结构的制作方法,其特征在于,所述步骤4采用化学气相沉积法沉积所述第一钝化层(8)。
4.如权利要求1所述的TFT基板结构的制作方法,其特征在于,所述步骤5采用涂布制程形成所述平坦层(9);所述平坦层(9)的材料为PFA。
5.如权利要求1所述的TFT基板结构的制作方法,其特征在于,所述步骤6采用物理气相沉积法沉积所述第一透明导电膜;采用湿法蚀刻制程形成所述第一像素电极(10)。
6.如权利要求1所述的TFT基板结构的制作方法,其特征在于,所述步骤7先采用黄光制程在所述平坦层(9)上对应所述漏极(7)上方曝光出第一过孔(91),然后以所述平坦层(9)为自对准光罩,采用干法蚀刻制程在所述第一钝化层(8)上对应所述第一过孔(91)蚀刻出第二过孔(92)。
7.如权利要求1所述的TFT基板结构的制作方法,其特征在于,所述栅极(3)的材料为钼、钛、铝和铜中的一种或多种的堆栈组合。
8.如权利要求1所述的TFT基板结构的制作方法,其特征在于,所述源极(6)与漏极(7)的材料为钼、钛、铝和铜中的一种或多种的堆栈组合。
9.如权利要求1所述的TFT基板结构的制作方法,其特征在于,所述栅极绝缘层(4)、第一钝化层(8)、及第二钝化层(11)的材料为氧化硅、氮化硅、或二者的堆栈组合。
10.如权利要求1所述的TFT基板结构的制作方法,其特征在于,所述第一像素电极(10)、及第二像素电极(12)的材料均为ITO。
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US10838294B2 (en) * | 2017-10-31 | 2020-11-17 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Method for improving residual TITO on the periphery of panel and mask |
WO2019109445A1 (zh) * | 2017-12-05 | 2019-06-13 | 深圳市华星光电半导体显示技术有限公司 | Tft 阵列基板的制作方法及显示装置的制作方法 |
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US20170018579A1 (en) | 2017-01-19 |
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WO2017008333A1 (zh) | 2017-01-19 |
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