CN105580126A - 基板处理装置 - Google Patents

基板处理装置 Download PDF

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CN105580126A
CN105580126A CN201480052654.7A CN201480052654A CN105580126A CN 105580126 A CN105580126 A CN 105580126A CN 201480052654 A CN201480052654 A CN 201480052654A CN 105580126 A CN105580126 A CN 105580126A
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CN105580126B (zh
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玄俊镇
宋炳奎
金劲勋
金龙基
申良湜
金仓乭
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Eugene Technology Co Ltd
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Abstract

根据本发明的一实施例，基板处理装置包括：腔本体，该腔本体的上部和下部开放，并通过形成于一侧的通道运送基板；内部反应管，该内部反应管具有下部开放的形状，并设置在上述腔本体的上部而提供对上述基板实施工序的工序空间；基板支架，配置在上述腔的开放的下部，可以将通过上述通道运送的上述基板转换到沿着上下方向装载的装载位置、及朝向上述工序空间上升而对被装载的上述基板实施工序的工序位置；遮断板，连接在上述基板支架的下部而与上述基板支架一起升降，在上述工序位置封闭上述内部反应管的开放的下部；连接气缸，竖立设置在上述遮断板的下部而与上述遮断板一起升降；及遮断部件，被连接在上述腔本体的开放的下部表面和上述连接气缸之间，将开放的上述腔本体的下部与外部隔离。

Description

基板处理装置
技术领域
本发明涉及基板处理装置，更详细地涉及批量式基板处理装置，在对基板实施工序时，利用可伸缩的遮断部件控制装载空间的体积来最小化对基板的污染，从而可以提升质量及生产率。
背景技术
用于半导体、平板显示器及太阳能电池的制造的基板处理装置是包括用于对蒸镀在如硅晶片或玻璃那样的基板上的预定的薄膜实施结晶化、相变等工序所必须的热处理步骤的装置。
作为代表性的，在制造液晶显示器或薄膜型结晶硅太阳能电池的情况下，具有将蒸镀在玻璃基板上的非晶硅结晶化为聚合硅的硅结晶装置。为了实施这种结晶工序，必须能够对形成有预定的薄膜的基板进行加热，例如，用于非晶硅的结晶化的工序温度最小需要550度至600度的温度。
这种基板处理装置，包括可以对一个基板执行对基板的工序的单片式(singlewafertype)和可对多个基板执行基板处理的批量式(batchtype)。单片式具有装置结构简单的优点，但是由于生产率下降的缺点，作为最近的大量生产用途，批量式受到关注。
发明内容
技术课题
本发明的目的在于，在遮断工序空间和装载空间的状态下对基板实施工序。
本发明的其它目的在于，在基板支架的工序位置最小化装载空间的体积。
本发明的其它目的将从下面的详细说明和附图会更加清楚。
课题解决方案
根据本发明的一实施例，基板处理装置包括：腔本体，该腔本体的上部和下部开放，并通过形成于一侧的通道运送基板；内部反应管，该内部反应管具有下部开放的形状，并设置在上述腔本体的上部而提供对上述基板实施工序的工序空间；基板支架，配置在上述腔的开放的下部，可以将通过上述通道运送的上述基板转换到沿着上下方向装载的装载位置、及朝向上述工序空间上升而对被装载的上述基板实施工序的工序位置；遮断板，连接在上述基板支架的下部而与上述基板支架一起升降，在上述工序位置封闭上述内部反应管的开放的下部；连接气缸，竖立设置在上述遮断板的下部而与上述遮断板一起升降；及遮断部件，被连接在上述腔本体的开放的下部表面和上述连接气缸之间，将开放的上述腔本体的下部与外部隔离。
上述遮断部件在上述基板支架的装载位置提供与上述工序空间连通的装载空间；在上述基板支架的工序位置可以减少上述装载空间。
上述遮断部件可以随着上述遮断板的升降而伸缩。
上述连接气缸的下部具有朝向外侧突出的突出部，上述遮断部件可以连接在上述腔本体的被开放的下部表面和上述突出部之间。
上述连接气缸可以在上述基板支架的装载位置位于上述腔本体的下部，在上述基板支架的工序位置位于上述腔本体的内部。
上述基板处理装置还包括设置于上述腔本体的上部的歧管；上述内部反应管可以被上述歧管支承。
上述遮断板可以在上述工序位置与上述歧管抵接配置而形成上述工序空间。
上述歧管形成有：第1供给口，用于向上述工序空间供给工序气体；排气口，形成在上述工序气体供给口的相反侧而排放被供给到上述工序空间的上述工序气体；及第2供给口，形成在上述第1供给口的下部而向上述腔本体的内部供给驰放气，其中，上述第2供给口可以在上述基板支架的工序位置与上述遮断板相互并排配置。
上述基板处理装置还可以包括插入到沿着上述遮断板的上表面形成的设置槽的密封部件。
上述基板处理装置还可以包括形成于上述遮断板的内部并流过从外部供给的冷媒的冷却流路。
上述基板处理装置还可以包括插入到沿着上述遮断板的上表面形成的设置槽的密封部件，并且上述冷却流路可以沿着上述密封部件邻接配置。
上述基板处理装置还可以具备：升降轴，竖立设置在上述遮断部件的外侧；升降电机，连接在上述升降轴而绕着上述升降轴旋转；支承环，连接在上述连接气缸的下部；及托架，分别连接在上述支承环和上述升降轴，随着上述升降轴的旋转与上述支承环一起升降。
发明效果
根据本发明的一实施例，批量式基板处理装置中，可以在容易遮断装载空间和工序空间的状态下对基板实施工序。另外，可以在最小化装载空间的体积的状态下对基板实施工序，从而最小化对基板的污染并提升质量及生产率。
附图说明
图1是简要地表示根据本发明的一实施例的基板处理装置的图。
图2及图3是表示图1所示的基板处理装置的工作过程的图。
图4是放大图3的A的图。
图5是表示图3所示的基板处理装置的驰放气流动状态的图。
具体实施方式
下面，参照图1至图5更详细地说明本发明的优选实施例。本发明的实施例可以变形成各种方式，本发明的范围不可解释为由下面说明的实施例限定。本实施例是为了对本发明所属技术领域的普通技术人员更详细地说明本发明而提供的。因此，为了强调更清楚的说明，附图中出现的各要素的形状可能被夸张。
另外，对于本领域的普通技术人员而言当然可以应用于除实施例中说明的基板W以外的多样的被处理体。例如，本发明中可处理的基板的种类不特别受限制。因此，整个半导体工序中普遍使用的玻璃、塑料、聚合物、硅晶片、不锈钢、蓝宝石等多种材质的基板可以在本发明的基板处理装置中处理。另外，在本发明中处理基板可以理解为不仅是处理基板本身，还包括对形成于基板上的预定的膜或图案等进行处理的情况。
不仅如此，本发明的基板处理装置的用途也不特别受限制。因此，利用本发明的基板处理装置可以进行整个半导体工序，例如蒸镀工序、蚀刻工序、表面改质工序等。而且，以下仅对发明的主要构成要素进行说明，根据所使用的目的，不同的多种构成要素可以追加包括在本发明的基板处理装置中是显而易见的。
图1是简要地表示根据本发明的一实施例的基板处理装置的图。如图1所示，基板处理装置100包括：上部及下部开放的形状的腔本体30；对开放的腔本体的30的上部进行封闭的腔盖5；以及可以从外部隔离所开放的腔本体30的下部的遮断部件70。通过形成于腔本体30的一侧的通道32，基板W被运送到腔本体30的内部，闸式阀(未图示)设置在通道32的外侧，因此通道32可以由闸式阀开放或封闭。另外，排气口34形成在通道的相反侧，可以通过排气口34向外部排放后述的驰放气。
歧管40设置在腔本体30的上部，内部反应管10可以被歧管30支承。内部反应管10封闭腔本体30的开放的上部而提供对基板W实施工序的工序空间(图3的2)，可以具有下部开放的形状。在歧管40的内面可以分别形成第1供给口13、第2供给口14及排气口19，第1供给口13形成在第2供给口14的上部。喷嘴15与第1供给口13连接，从外部供给的工序气体通过第1供给口13供给到喷嘴15并通过喷嘴15向基板供给工序气体。
喷嘴15可以沿着内部反应管10的内壁插入设置，沿着圆周方向可以配置在相互不同的高度。从喷嘴15供给的工序气体朝向形成于相反侧的排气孔17流动，由此可以确保工序气体和基板W的表面反应的充足的时间。这时，工序中产生的未反应气体及反应副产物通过排气孔17被吸入到排气口19而向外部排放，驰放气通过第2供给口14供给到基板处理装置100的内部并通过排气口34排放。另外，基板处理装置100可以设置有辅助管18，用于使未反应气体及反应副产物通过排气孔17容易向排气口19流动。
另外，基板处理装置100的内部反应管10的外侧可以设有外部反应管20，外部反应管20配置在喷嘴15及排气孔17的外侧。在外部反应管20的外侧可以设有腔盖5，腔盖5可以具备加热基板W的加热器7。内部反应管10及外部反应管20可以是在陶瓷或石英、或者金属上镀敷陶瓷的材质。
基板处理装置100还包括装载多个基板的基板支架50，通过通道32运送的基板W沿上下方向依次装载到基板支架50上。基板支架50可以沿上下方向形成有多个支撑梢53(或槽)，以便容易装载基板W，在支撑梢53和支撑梢53之间可以具备导向板55。导向板55的截面积大于基板W，可以向通过导向板55沿上下方向装载的基板W和基板W之间进行均匀的气体供给。
基板支架50配置在腔本体30的下部以既定的间隔上升，从而可以将通过通道32运送的基板W沿上下方向装载(“装载位置”)，完成装载的基板支架50上升而转换到工序位置，以便可以实施对基板W的工序。基板支架50被转换到工序位置的情况下，为了最小化工序空间(图3的2)内部的热损失，在基板支架50的下部可以具备多个隔热板58。
在基板支架50的下部设有遮断板60，遮断板60以与基板支架50的同心为基准，具有大于基板支架50的外径的形状。基板支架50被转换到工序位置的情况下，遮断板60与歧管24抵接而封闭内部反应管10的开放的下部来提供工序空间(图3的2)。设置槽63可以沿着遮断板60的上表面形成，密封部件65被插入设置在设置槽63。密封部件65最小化遮断板60和歧管40之间的缝隙，可以将工序空间(图3的2)与装载空间(图3的3)严密切断。密封部件65可以是硅胶材质的O形环(O-ring)。
另外，在遮断板60的内表面形成冷却流路68，沿着冷却流路68从外部供给的冷媒可以沿着冷却流路68流动。优选地，冷却流路68可以与设置槽63以既定的间隔分隔形成，可以具有与设置槽63对应的形状。因此，在基板支架50的工序位置对基板W实施工序时，工序空间(图3的2)可以将由随着向高温气氛的进行造成的密封部件65的破损防范于未然。
在遮断板60的下部中央部可以设置电机壳85。旋转轴83的一侧与遮断板60的下部连接，绕着旋转轴83旋转的旋转电机(未图示)可以固定设置在电机壳85的内部。旋转电机在基板支架50被转换到工序位置而实施对基板W的工序时，可以驱动旋转轴83来使基板支架50旋转。
另外，在遮断板60的下部侧面设置连接气缸80。连接气缸80朝向遮断板60的下部竖立设置，连接气缸80的下部可以具有朝向外侧突出的突出部81。遮断部件70连接在开放的腔本体30的下部和连接气缸80的突出部81之间，将开放的腔本体30的下部与外部隔离而提供装载空间(图3的3)。装载空间(图3的3)在基板支架50的装载位置与工序空间(图3的2)连通，当基板支架50被转换到工序位置时，装载空间(图3的3)与工序空间(图3的2)遮断。
遮断部件70是可伸缩的材质，随着与连接气缸80一起上升，装载空间(图3的3)的体积可以弹性变化。遮断部件70可以是波纹管(bellows)，可以通过凸缘(flange)72连接在腔本体30和连接气缸80之间。支承环95连接在连接气缸80的突出部81下部而支承连接气缸80。托架97的一侧与支承环95连接，托架97的另一侧与竖立设置在遮断部件70的外侧的升降轴90连接。升降电机98连接在升降轴90，可以驱动升降轴90，托架可以通过升降轴90的旋转与支承环95一起升降。
图2及图3是表示图1所示的基板处理装置的工作过程的图，图4是放大图3的A的图。图2是表示图1所示的基板支架的装载位置的图，图3是表示转换到图1所示的基板支架的工序位置的状态的图。如图2所示，通过通道32运送的基板W装载到基板支架50。基板支架50如上所述可升降，通过通道32运送的基板W从基板支架50的上部朝下部方向依次放置在支撑梢53上。
在基板支架50上装载完基板53时，如图3所示，基板支架50被转换到工序位置。基板支架50被转换到工序位置的情况下，连接在基板支架50的下部的遮断板60与歧管40抵接，可以封闭内部反应管10的开放的下部。并且，与遮断板60的下部连接的连接气缸80随着与基板支架50一起升降而升降，连接在腔本体30的下部和连接气缸80之间的遮断部件70可以伸缩，因此可以通过连接气缸80的上升来减少装载空间30的体积。
如图4所示，遮断板60形成有设置槽63，密封部件65被设置在设置槽63，从而密封歧管40和遮断板60之间，从而可以将工序空间2与外部紧密维持。冷却流路68形成为与遮断板60的设置槽63对应，可以防止密封部件65破损及遮断板60的热损伤。另外，密封部件65可以分别设置在歧管40与内部反应管10之间、凸缘72与腔本体30之间、腔本体30与歧管40之间，冷却流路68也可以形成在对应的位置。
图5是表示图3所示的基板处理装置的驰放气流动状态的图。如图5所示，在基板支架50的工序位置，第2供给口14与遮断板60并排形成。在腔本体30的内部沿着第2供给口14可以设有喷嘴环38，驰放气可以沿着第2供给口14通过形成于喷嘴环38上的供给孔39而供给到装载空间3。在腔本体30的通道相反侧形成排气口34，被供给到装载空间3的驰放气可以通过排气口34排放。
即，基板支架50被转换到工序位置时，遮断部件70可以上下伸缩，因此装载空间3被最小化。在基板支架50的工序位置，遮断板60划分工序空间2和装载空间3，可通过密封部件65最小化工序空间2和装载空间3之间的空白。因此，能够容易控制装载空间3的驰放气，通过最小化装载空间3，在完成对基板W的工序后降低基板支架50的情况下，减少由基板W的污染及微粒引起的不合格，可以提高对基板W的成品率且增大生产率。
通过优选实施例详细地说明了本发明，但是也可以是与此不的方式的实施例。因此，下面记载的权利要求的技术思想和范围不限于优选的实施例。
工业实用性
本发明可以应用于多种方式的半导体制造设备及制造方法。

Claims (12)

1.一种基板处理装置，其特征在于，包括：
腔本体，该腔本体的上部和下部开放，并通过形成于一侧的通道运送基板；
内部反应管，该内部反应管具有下部开放的形状，并设置在上述腔本体的上部而提供对上述基板实施工序的工序空间；
基板支架，配置在上述腔的开放的下部，可以将通过上述通道运送的上述基板转换到沿着上下方向装载的装载位置、及朝向上述工序空间上升而对被装载的上述基板实施工序的工序位置；
遮断板，连接在上述基板支架的下部而与上述基板支架一起升降，在上述工序位置封闭上述内部反应管的开放的下部；
连接气缸，竖立设置在上述遮断板的下部而与上述遮断板一起升降；及遮断部件，被连接在上述腔本体的开放的下部表面和上述连接气缸之间，将开放的上述腔本体的下部与外部隔离。
2.如权利要求1所述的基板处理装置，其特征在于，
上述遮断部件在上述基板支架的装载位置提供与上述工序空间连通的装载空间；
在上述基板支架的工序位置可以减少上述装载空间。
3.如权利要求1或2所述的基板处理装置，其特征在于，
上述遮断部件能够随着上述遮断板的升降而伸缩。
4.如权利要求1所述的基板处理装置，其特征在于，
上述连接气缸的下部具有朝向外侧突出的突出部，
上述遮断部件连接在上述腔本体的被开放的下部表面和上述突出部之间。
5.如权利要求1所述的基板处理装置，其特征在于，
上述连接气缸在上述基板支架的装载位置位于上述腔本体的下部，在上述基板支架的工序位置位于上述腔本体的内部。
6.如权利要求1所述的基板处理装置，其特征在于，
上述基板处理装置还包括设置于上述腔本体的上部的歧管；上述内部反应管被上述歧管支承。
7.如权利要求6所述的基板处理装置，其特征在于，
上述遮断板在上述工序位置与上述歧管抵接配置而形成上述工序空间。
8.如权利要求6所述的基板处理装置，其特征在于，
上述歧管形成有：第1供给口，向上述工序空间供给工序气体；排气口，形成在上述工序气体供给口的相反侧而排放被供给到上述工序空间的上述工序气体；及第2供给口，形成在上述第1供给口的下部而向上述腔本体的内部供给驰放气，
其中，上述第2供给口在上述基板支架的工序位置与上述遮断板相互并排配置。
9.如权利要求1所述的基板处理装置，其特征在于，
上述基板处理装置还包括插入到沿着上述遮断板的上表面形成的设置槽中的密封部件。
10.如权利要求1所述的基板处理装置，其特征在于，
上述基板处理装置还包括形成于上述遮断板的内部并流过从外部供给的冷媒的冷却流路。
11.如权利要求10所述的基板处理装置，其特征在于，
上述基板处理装置还包括插入到沿着上述遮断板的上表面形成的设置槽中的密封部件，并且上述冷却流路沿着上述密封部件邻接配置。
12.如权利要求1所述的基板处理装置，其特征在于，
上述基板处理装置还具备：
升降轴，竖立设置在上述遮断部件的外侧；
升降电机，连接在上述升降轴而绕着上述升降轴旋转；
支承环，连接在上述连接气缸的下部；及
托架，分别连接在上述支承环和上述升降轴，随着上述升降轴的旋转与上述支承环一起升降。
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