TW201530609A - 基板處理裝置 - Google Patents

基板處理裝置 Download PDF

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TW201530609A
TW201530609A TW103135489A TW103135489A TW201530609A TW 201530609 A TW201530609 A TW 201530609A TW 103135489 A TW103135489 A TW 103135489A TW 103135489 A TW103135489 A TW 103135489A TW 201530609 A TW201530609 A TW 201530609A
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substrate
processing apparatus
lower half
substrate holder
disposed
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TWI559362B (zh
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Jun-Jin Hyon
Byoung-Gyu Song
Kyong-Hun Kim
Yong-Ki Kim
Yang-Sik Shin
Chang-Dol Kim
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Eugene Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B1/00—Shaft or like vertical or substantially vertical furnaces
    • F27B1/10—Details, accessories, or equipment peculiar to furnaces of these types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B1/00—Shaft or like vertical or substantially vertical furnaces
    • F27B1/02—Shaft or like vertical or substantially vertical furnaces with two or more shafts or chambers, e.g. multi-storey
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B1/00—Shaft or like vertical or substantially vertical furnaces
    • F27B1/10—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B1/20—Arrangements of devices for charging
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B1/00—Shaft or like vertical or substantially vertical furnaces
    • F27B1/10—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B1/21—Arrangements of devices for discharging
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B3/00—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces
    • F27B3/02—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces of single-chamber fixed-hearth type
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B5/14—Arrangements of heating devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B5/16—Arrangements of air or gas supply devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B5/18—Arrangement of controlling, monitoring, alarm or like devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00—Charging; Discharging; Manipulation of charge
    • F27D3/0084—Charging; Manipulation of SC or SC wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0033—Chamber type furnaces the floor of the furnaces consisting of the support carrying the charge, e.g. car type furnaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers

Abstract

本發明揭示一種基板處理裝置。該基板處理設備包含：一腔室本體，其具有一通道，透過其一側輸送基板，該腔室本體具有開放式上半部與下半部；一內部反應管，其設置於該腔室本體之上來提供一處理空間，其中執行有關該等基板的一處理，該內部反應管具有一開放式下半部；一基板固定器，設置於該腔室的該開放式下半部內，以便在輸送通過該通道的該等基板垂直堆疊之一堆疊位置與該基板固定器朝向該處理空間上升之一處理位置之間移動，來執行與該等堆疊基板有關的該處理；一阻擋板，其連接至該基板固定器的下半部，以便與該基板固定器一起上升或下降，該阻擋板在該處理位置上封閉該內部反應管的該開放式下半部；一連接圓筒，其垂直設置於該阻擋板的下半部上，隨著該阻擋板一起上升或下降；以及一阻擋構件，其連接在該腔室本體的該開放式下半部與該連接圓筒之間，將該腔室本體的該開放式下半部與外界隔離。

Description

基板處理裝置
本說明書中揭示的本發明係關於基板處理裝置，尤其係關於一批次型基板處理裝置，其中當使用一彈性阻擋構件在一基板上執行處理時，一堆疊空間的體積受到控制，將該基板上的汙染減至最低，藉此改善品質與生產力。
用於製造半導體、平板顯示器、光電電池等等的基板處理裝置可為執行基本熱處理程序，將沉積在一基板上，例如矽晶圓或玻璃基板上的預定薄膜結晶以及轉變相位之裝置。
一般來說，在製造液晶顯示器或薄膜結晶矽光電電池的情況下，使用矽結晶裝置將該玻璃基板上的非晶矽結晶成多晶矽。若要執行該結晶處理，則必須加熱其上形成該預定薄膜的該基板，例如將該非晶矽結晶的處理溫度必須大約550℃至大約600℃。
這種基板處理裝置可區分成單一晶圓型基板處理裝置，其中在一個基板上執行基板處理程序，以及批次型基板處理裝置，其中在複數個基板上執行基板處理程序。該單一晶圓型基板處理裝置的優勢就是結構簡單，不過該單一晶圓型基板處理裝置的生產力會下降，因此批次型基板處理裝置就受到重視，當成用於量產的基板處理裝置。
【先前技術文件】 【專利文件】
第10-2013-0054706號韓國專利申請案(2013年5月27日)
本發明提供一種基板處理裝置，其中在從一堆疊空間當中密封出一處理空間的狀態下，執行有關一基板的處理。
本發明也提供一種基板處理裝置，其中在一基板固定器的一處理位置上將一堆疊空間體積最小化。
參閱下列詳細說明以及附圖將可了解本發明的其他目的。
本發明的具體實施例提供基板處理裝置，包含：一腔室本體，其具有一通道，透過其一側輸送基板，該腔室本體具有開放式上半部與下半部；一內部反應管，其設置於該腔室本體之上來提供一處理空間，其中執行有關該等基板的一處理，該內部反應管具有一開放式下半部；一基板固定器，設置於該腔室的該開放式下半部內，以便在輸送通過該通道的該等基板垂直堆疊之一堆疊位置與該基板固定器朝向該處理空間上升之一處理位置之間移動，來執行與該等堆疊基板有關的該處理；一阻擋板，其連接至該基板固定器的下半部，以便與該基板固定器一起上升或下降，該阻擋板在該處理位置上封閉該內部反應管的該開放式下半部；一連接圓筒，其垂直設置於該阻擋板的下半部上，隨著該阻擋板一起上升或下降；以及一阻擋構件，其連接在該腔室本體的該開放式下半部與該連接圓筒之間，將該腔室本體的該開放式下半部與外界隔離。
在某些具體實施例內，該阻擋構件可在該基板固定器的該堆疊位置上提供與該處理空間連通的一堆疊空間，並且在該基板固定器的該 處理位置上該堆疊空間可縮小體積。
在其他具體實施例內，該阻擋構件可隨該阻擋板上升而有彈性。
仍舊在其他具體實施例內，該連接圓筒可具有一突出物，從其下半部往外突出，並且該阻擋構件可連接在該腔室本體的該開放式下半部與該突出物之間。
甚至在其他具體實施例內，該連接圓筒在該基板固定器的該堆疊位置上設置於該腔室本體的下半部內，並且在該基板固定器的該處理位置上設置於該腔室本體內。
尚且在其他具體實施例內，該基板處理裝置可另包含設置於該腔室本體上的一分歧管，其中該內部反應管由該分歧管支撐。
在進一步具體實施例內，在該處理位置上該阻擋板可接觸該分歧管，以定義該處理空間。
仍舊在進一步具體實施例內，該分歧管可包含：一第一供應單元，其供應一處理氣體進入該處理空間；一排氣單元，其設置於與該第一供應單元相對的側邊上，用於排出供應進入該處理空間的該處理氣體；以及一第二供應單元，其設置於該第一供應單元之下，將一淨化氣體供應進入該腔室本體內，其中該第二供應單元在該基板固定器的該處理位置上與該阻擋板平行設置。
甚至在進一步具體實施例內，該基板處理裝置可另包含一密封構件，其插入延著該阻擋板上表面定義的一安裝溝槽內。
尚且在進一步具體實施例內，該基板處理裝置可另包含定義 在該阻擋板內的一冷卻通道，允許從外界供應的一冷卻劑流入其中。
在更進一步具體實施例內，該基板處理裝置可另包含一密封構件，其插入延著該阻擋板上表面定義的一安裝溝槽內，其中該冷卻通道與該密封構件相鄰設置。
仍舊在更進一步具體實施例內，該基板處理裝置另包含：一升降轉軸，其垂直設置於該阻擋構件之外；一升降馬達，其連接至該升降轉軸來旋轉該升降轉軸；一支撐環，其連接至該連接圓筒的下半部；以及一托架，其連接至每一該支撐環與該升降轉軸，該托架會利用該升降轉軸的旋轉與該支撐環一起升降。
2‧‧‧處理空間
3‧‧‧堆疊空間
5‧‧‧腔室蓋
7‧‧‧加熱器
10‧‧‧內部反應管
13‧‧‧第一供應單元
14‧‧‧第二供應單元
15‧‧‧噴嘴
17‧‧‧排氣嘴
18‧‧‧輔助管
19‧‧‧排氣單元
20‧‧‧外部反應管
30‧‧‧腔室本體
32‧‧‧通道
34‧‧‧排氣口
38‧‧‧噴嘴環
39‧‧‧供應孔
40‧‧‧分歧管
50‧‧‧基板固定器
53‧‧‧支撐尖端
55‧‧‧導板
58‧‧‧隔熱板
60‧‧‧阻擋板
63‧‧‧安裝溝槽
65‧‧‧密封構件
68‧‧‧冷卻通道
70‧‧‧阻擋構件
72‧‧‧凸緣
80‧‧‧連接圓筒
81‧‧‧突出部分
83‧‧‧旋轉軸
85‧‧‧馬達外殼
90‧‧‧升降轉軸
95‧‧‧支撐環
97‧‧‧托架
98‧‧‧升降馬達
100‧‧‧基板處理裝置
W‧‧‧基板
在此包含附圖來進一步了解本發明，並且併入以及構成此說明書的一部分。圖式例示本發明的示範具體實施例，並且在搭配內容說明之後可用來解釋本發明原理。圖式中：第一圖為根據本發明具體實施例的基板處理裝置之圖解圖；第二圖和第三圖為例示第一圖中該基板處理裝置的一操作處理之圖式；第四圖為第三圖中A部分的放大圖；以及第五圖為例示第三圖中該基板處理裝置內一淨化氣體的流動狀態之圖式。
此後，將參照第一圖至第五圖來詳細說明本發明的範例具體實施例。不過，本發明可以有不同形式的修改，並且不受限於此處公佈的 具體實施例。而是提供這些具體實施例，如此所揭示範圍更完整，並且將本發明範疇完整傳輸給精通此技術的人士。在圖式中，為了清晰起見所以誇大了組件的形狀。
另外，精通技術人士瞭解除了具體實施例內所描述的基板W以外，本發明也適用於許多要處理的物體。例如：本發明並不受限於要處理的基板類型，如此，基板由許多材料形成，例如玻璃、塑膠、聚合物、矽晶圓、不銹鋼、藍寶石材料等等，這一般用於整個半導體製程。另外，該基板的處理經了解為一預定或在該基板上形成圖案的處理，以及該基板本身的處理。
另外，本發明的該基板處理裝置並不受限於使用該裝置，如此整個半導體處理，例如沉積處理、蝕刻處理、表面處理等等，都可使用根據本發明的該基板處理裝置來執行。此外，底下將只描述本發明的主要組件。另外根據用途，很明顯有許多組件可額外提供給本發明的該基板處理裝置。
第一圖為根據本發明具體實施例的基板處理裝置之圖解圖。如第一圖內所例示，一基板處理裝置100包含其一上半部與一下半部都開放的一腔室本體30、覆蓋腔室本體30的該上半部之一腔室蓋5，以及用於將腔室本體30的該開放式下半部與外界隔離之一阻擋構件70。一基板W透過腔室本體30一側定義的一通道32，輸送進入腔室本體30。一閘道閥(未顯示)可設置於通道32外面，以開啟與關閉通道32。另外，一排氣口34可設置於與該通道相對的一側邊上。稍後將描述的一淨化氣體可通過排氣口34排放到外界。
分歧管40可設置於腔室本體30的該上半部上，並且分歧管40可支撐一內部反應管10。內部反應管10可封閉腔室本體30的該開放式上半部，以提供其中執行有關該基板W的處理之一處理空間(請參閱第三圖的參考編號2)。內部反應管10可具有一開放式下半部。第一和第二供應單元13和14以及一排氣單元19可分別設置於分歧管40的內表面上。在此，第一供應單元13可設置於第二供應單元14之上。一噴嘴15可連結至第一供應單元13。從外界供應的一處理氣體可透過第一供應單元13供應進入噴嘴15，並且透過噴嘴15供應至該基板上。
噴嘴15可沿著內部反應管10的內壁插入，並且沿著圓周方向設置於彼此不同的高度上。從噴嘴15供應的該處理氣體可流向設置於與噴嘴15相對側邊上的排氣嘴17，確保該處理氣體與基板W的表面有足夠時間彼此反應。在此，透過排氣孔17將該處理期間產生的未反應氣體與副產物吸入排氣單元19，然後排放到外側。該淨化氣體可透過第二供應單元14供應進入基板處理裝置100內，並且透過排氣口34排出。另外，一輔助管18可設置於基板處理裝置100內，如此未反應氣體與副產物可輕易透過排氣孔17供應至排氣單元19。
另外，在基板處理裝置100內，一外部反應管20可設置於內部反應管10之外，並且設置於噴嘴15與排氣孔17之外。另外，腔室蓋5可設置於外部反應管20之外，腔室蓋5可包含一加熱器7，用於將該基板W加熱。內部反應管10與外部反應管20都可由陶瓷、石英或塗上陶瓷的金屬所形成。
基板處理裝置100另包含其中堆疊複數個基板的一基板固定器50。傳輸通過一通道32的該等基板W可往垂直方向連續載至基板固定器 50上。複數個支撐尖端53(或溝槽)可垂直設置於基板固定器50內，如此可輕鬆堆疊該等基板W。另外，在支撐尖端53之間可放置一導板55，導板55的面積可大於該基板W的面積。透過導板55，氣體可均勻供應至該等垂直堆疊的基板W之間。
基板固定器50可設置於腔室本體30的下半部內。基板固定器50可上升一預定距離，允許垂直堆疊透過通道32輸送的該等基板W(「堆疊位置」)。其上已經完全堆疊該等基板W的基板固定器50可上升輸送至一處理位置，如此執行與該基板W有關的處理。當基板固定器50移動至該處理位置時，複數個隔熱板58可設置於基板固定器50之下，如此讓一處理空間(請參閱第三圖的參考編號2)之內的熱損失降至最低。
在基板固定器50之下可設置一阻擋板60。相對於與基板固定器50相同中心，阻擋板60的外徑大於基板固定器50的外徑。當該基板移動至該處理位置時，阻擋板60可接觸分歧管40，將內部反應管10的開放式下半部關閉，藉此提供該處理空間(請參閱第三圖的參考編號2)。一安裝溝槽63可沿著阻擋板60的頂端表面定義，一密封構件65可插入安裝溝槽63內。密封構件65可將阻擋板60與分歧管40之間的間隙縮至最小，從一堆疊空間(請參閱第三圖的參考編號3)密封一處理空間(請參閱第三圖的參考編號2)。密封構件65可為由矽形成的一O形環。
另外，一冷卻通道68可定義在阻擋板60的內表面內，在此從外界供應的冷卻劑可流過冷卻通道68。冷卻通道68可與安裝溝槽63相隔一預定距離。冷卻通道68具有一形狀對應至安裝溝槽63的形狀。如此，當在基板固定器50的該處理位置上執行有關該基板W的處理時，該處理空間(請 參閱第三圖的參考編號2)可避免密封構件65因為該處理空間的高溫氣體而破裂。
一馬達外殼85可設置於阻擋板60的下方中間部分內。一旋轉軸83具有一端連接至阻擋板60的下半部。而旋轉該旋轉軸83的一旋轉馬達(未顯示)可固定至馬達外殼85的內部。當基板固定器50移動至該處理位置來執行與該基板W相關的處理時，該旋轉馬達可驅動旋轉軸83，來旋轉基板固定器50。
另外，一連接圓筒80可設置於阻擋板60的下方側邊表面上，連接圓筒80垂直設置朝向阻擋板60的下半部。另外，朝向外面突出的一突出部分81可設置於連接圓筒80的下半部上。一阻擋構件70可連接在腔室本體30的該開放式下半部與連接圓筒80的突出物81之間，將腔室本體30的該開放式下半部與外界隔離，藉此提供該堆疊空間(請參閱第三圖的參考編號3)。該堆疊空間(請參閱第三圖的參考編號3)在基板固定器50的該堆疊位置上，可與該處理空間(請參閱第三圖的參考編號)連通。當基板固定器50移動至該處理位置時，該堆疊空間(請參閱第三圖的參考編號3)密封與該處理空間(請參閱第三圖的參考編號2)隔開。
阻擋構件70由彈性材料形成。因為阻擋構件70與連接圓筒80一起上升，所以該堆疊空間(請參閱第三圖的參考編號3)的體積會彈性改變。阻擋構件70可為一伸縮套管。阻擋構件70可透過一凸緣72連接在腔室本體30與連接圓筒80之間。一支撐環95可連接至連接圓筒80的突出部分81下半部，以便支撐連接圓筒80。一托架97可具有一側連接至支撐環95，並且另一側連接至垂直設置於阻擋構件70之外的一升降轉軸90。一升降馬達 98連接至升降轉軸90來驅動升降轉軸90，在此利用升降轉軸90轉動，托架97可與支撐環95一起升降。
第二圖和第三圖為例示第一圖中該基板處理裝置的一操作處理之圖式，並且第四圖為第三圖中A部分的放大圖。第二圖為例示第一圖中該基板固定器的一堆疊位置之圖式，並且第三圖為例示第一圖中該基板固定器移動至一處理位置的狀態下之圖式。請參閱第二圖，輸送通過通道32的該等基板W可連續載至基板固定器50上。如上述，基板固定器50可升降。在此，輸送通過通道32的該等基板W可依序從基板固定器50上面，往下放置到支撐尖端53上。
當基板53全部都放置在基板固定器50上時，基板固定器50移動至該處理位置，如第三圖內所例示。當基板固定器50移動至該處理位置時，連接至基板固定器50下半部的阻擋板60可與分歧管40接觸，並且封閉內部反應管10的該開放式下半部。另外，連接至阻擋板60下半部的連接圓筒80可與基板固定器50一起升降。另外，連接在腔室本體30下半部與該連接圓筒之間的阻擋構件70可具有彈性。如此，根據連接圓筒80的升降，堆疊空間3可減少體積。
如第四圖內所例示，安裝溝槽63定義在阻擋板60內，並且密封構件65設置於安裝溝槽63上，用於密封分歧管40與阻擋板60之間的一空間，藉此緊密密封處理空間2與外界分隔。冷卻通道68可定義成對應至阻擋板60的安裝溝槽63，避免密封構件65與阻擋板60受損以及熱損。另外，密封構件65以及冷卻通道68可分別設置於分歧管40與內部反應管10之間、凸緣72與腔室本體30之間以及腔室本體30與分歧管40之間。
第五圖為例示第三圖中該基板處理裝置內一淨化氣體的流動狀態之圖式。如第五圖內所例示，第二供應單元14在基板固定器50的該處理位置上與阻擋板60平行設置。一噴嘴環38可沿著第二供應單元14設置在腔室本體30內。該淨化氣體可透過沿著第二供應單元14的噴嘴環38內定義之供應孔39，供應至堆疊空間3。排氣口34可定義在與腔室本體30的一通道相對之一側邊內。在此，供應至堆疊空間3的該淨化氣體可透過排氣口34排出。
如此，當基板固定單元50移動至該處理位置時，因為阻擋構件70具有彈性，所以堆疊空間3可以最小化。利用阻擋板60，在基板固定器50的該處理位置上分割處理空間2與堆疊空間3。利用密封構件65，可將處理空間2與堆疊空間3之間的間隙縮至最小。因此，可輕鬆控制堆疊空間3內的該淨化氣體。另外，堆疊空間3可最小化。如此，當在相對於該基板W的處理完成之後基板固定器50下降時，可減少由於污染物與顆粒對於該基板W的損害。如此，可改善該基板W的產量與生產力。
根據本發明的具體實施例，該批次型基板處理裝置可在該堆疊空間輕鬆密封與該處理空間分隔的狀態下，執行有關該基板的處理。另外，因為可在該堆疊空間體積最小的狀態下執行有關該基板的處理，所以可減少在該基板上發生污染的情況，而改善品質與生產力。
雖然本發明以參考範例具體實施例來詳細說明，不過本發明可在不同的形式內具體實施。如此，底下所公佈的技術理念與申請專利範圍的範疇都不受限於該等較佳具體實施例。
上述相關主題僅為說明並不設限，並且申請專利範圍意欲涵 蓋位於本發明精神與範疇內的所有這種修改、增強以及其他具體實施例。如此，為了有最大的法律適用範圍，本發明範疇由下列申請專利範圍及其附屬項的最寬鬆允許解釋來決定，並且不受前面詳細說明所侷限或限制。
5‧‧‧腔室蓋
7‧‧‧加熱器
10‧‧‧內部反應管
13‧‧‧第一供應單元
14‧‧‧第二供應單元
15‧‧‧噴嘴
17‧‧‧排氣嘴
18‧‧‧輔助管
19‧‧‧排氣單元
20‧‧‧外部反應管
30‧‧‧腔室本體
32‧‧‧通道
34‧‧‧排氣口
38‧‧‧噴嘴環
39‧‧‧供應孔
50‧‧‧基板固定器
53‧‧‧支撐尖端
55‧‧‧導板
40‧‧‧分歧管
60‧‧‧阻擋板
63‧‧‧安裝溝槽
65‧‧‧密封構件
68‧‧‧冷卻通道
70‧‧‧阻擋構件
72‧‧‧凸緣
80‧‧‧連接圓筒
81‧‧‧突出部分
83‧‧‧旋轉軸
85‧‧‧馬達外殼
90‧‧‧升降轉軸
95‧‧‧支撐環
97‧‧‧托架
98‧‧‧升降馬達
100‧‧‧基板處理裝置

Claims (12)

  1. 一種基板處理裝置，包含：一腔室本體，其具有一通道，透過其一側輸送基板，該腔室本體具有開放式上半部與下半部；一內部反應管，其設置於該腔室本體之上來提供一處理空間，其中執行有關該等基板的一處理，該內部反應管具有一開放式下半部；一基板固定器，設置於該腔室的該開放式下半部內，以便在輸送通過該通道的該等基板垂直堆疊之一堆疊位置與該基板固定器朝向該處理空間上升之一處理位置之間移動，來執行與該等堆疊基板有關的該處理；一阻擋板，其連接至該基板固定器的下半部，以便與該基板固定器一起上升或下降，該阻擋板在該處理位置上封閉該內部反應管的該開放式下半部；一連接圓筒，其垂直設置於該阻擋板的下半部上，隨著該阻擋板一起上升或下降；以及一阻擋構件，其連接在該腔室本體的該開放式下半部與該連接圓筒之間，將該腔室本體的該開放式下半部與外界隔離。
  2. 如申請專利範圍第1項之基板處理裝置，其中該阻擋構件提供一堆疊空間，在該基板固定器的該堆疊位置上與該處理空間連通，以及在該基板固定器的該處理位置上，該堆疊空間的體積縮小。
  3. 如申請專利範圍第1或2項之基板處理裝置，其中在該阻擋板上升時該阻擋構件具有彈性。
  4. 如申請專利範圍第1項之基板處理裝置，其中該連接圓筒具有一突出物，從其一下半部往外突出，以及該阻擋構件連接在該腔室本體的該開放式下半部與該突出物之間。
  5. 如申請專利範圍第1項之基板處理裝置，其中該連接圓筒在該基板固定器的該堆疊位置上設置於該腔室本體的下半部內，並且在該基板固定器的該處理位置上設置於該腔室本體內。
  6. 如申請專利範圍第1項之基板處理裝置，另包含設置在該腔室本體上的一分歧管，其中該內部反應管由該分歧管支撐。
  7. 如申請專利範圍第6項之基板處理裝置，其中在該處理位置上該阻擋板接觸該分歧管，以定義該處理空間。
  8. 如申請專利範圍第6項之基板處理裝置，其中該分歧管包含：一第一供應單元，其供應一處理氣體進入該處理空間；一排氣單元，其設置於與該第一供應單元相對的側邊上，用於排出供應進入該處理空間的該處理氣體；以及一第二供應單元，其設置於該第一供應單元之下，將一淨化氣體供應進入該腔室本體，其中該第二供應單元在該基板固定器的該處理位置上與該阻擋板平行設置。
  9. 如申請專利範圍第1項之基板處理裝置，另包含一密封構件，其插入延著該阻擋板上表面定義的一安裝溝槽內。
  10. 如申請專利範圍第1項之基板處理裝置，另包含定義在該阻擋板內的 一冷卻通道，允許從外界供應的一冷卻劑流入其中。
  11. 如申請專利範圍第10項之基板處理裝置，另包含一密封構件，其插入延著該阻擋板上表面定義的一安裝溝槽內，其中該冷卻通道與該密封構件相鄰設置。
  12. 如申請專利範圍第1項之基板處理裝置，另包含：一升降轉軸，其垂直設置於該阻擋構件之外；一升降馬達，其連接至該升降轉軸來旋轉該升降轉軸；一支撐環，其連接至該連接圓筒的下半部；以及一托架，其連接至每一該支撐環與該升降轉軸，該托架會利用該升降轉軸的旋轉與該支撐環一起升降。
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