CN105514054A - 功率半导体装置 - Google Patents

功率半导体装置 Download PDF

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Publication number
CN105514054A
CN105514054A CN201510649904.1A CN201510649904A CN105514054A CN 105514054 A CN105514054 A CN 105514054A CN 201510649904 A CN201510649904 A CN 201510649904A CN 105514054 A CN105514054 A CN 105514054A
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Prior art keywords
semiconductor element
distribution component
power semiconductor
protuberance
semiconductor arrangement
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CN201510649904.1A
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CN105514054B (zh
Inventor
浅田晋助
吉松直树
井本裕儿
石山祐介
藤野纯司
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于提供一种能够提高封装部件的填充性的技术。功率半导体装置具备绝缘基板(1)、半导体元件(2)、壳体(4)、以及配线部件(5)。壳体(4)形成以绝缘基板(1)的、接合有半导体元件(2)的面为底面的容器体。配线部件(5)具有位于半导体元件(2)的上表面电极(2a)的上方的接合部分。在配线部件(5)的接合部分处，设置有：凸出部(5b)，其向半导体元件(2)的上表面电极(2a)侧凸出，通过焊料(6)与该上表面电极(2a)进行接合；以及贯穿孔(5c)，其穿过凸出部(5b)而在厚度方向上贯穿接合部分。

Description

功率半导体装置
技术领域
本发明涉及一种功率半导体装置，特别地，涉及一种通过焊料将半导体元件与配线部件进行接合的功率半导体装置。
背景技术
在现有的一般的功率半导体装置的制造中，将在半导体元件的下表面形成的下表面电极与绝缘基板上的电路图案进行接合，将在半导体元件的上表面形成的上表面电极与其他半导体元件、外部端子，利用与它们进行了超声接合的由铝等构成的导线，进行电连接。然后，进行模塑树脂的封装、或者封装部件的填充等。
但是，在利用导线进行配线的情况下，每根导线的允许电流存在限制，因此在形成大电流电路的功率半导体装置中，必须增加导线的根数，生产率存在问题。因此，作为用于提高生产率的大电流电路的配线方式，提出了下述配线方式，即，将对金属板进行冲压加工而形成的板状的配线部件与半导体元件的上表面电极利用焊料等进行接合(例如专利文献1)。
专利文献1：日本特开2013－69825号公报
在上述这样的具备板状的配线部件的功率半导体装置中，板状的配线部件以覆盖半导体元件的上表面的方式进行配置。因此，存在下述问题，即，在配线部件与半导体元件之间的未设置焊料的部分处，形成封装部件等难以填充的狭窄间隙。并且，在焊料过度地润湿延展的情况下，配线部件与半导体元件之间的间隙变得更窄，因而存在封装部件等更加难以填充的问题。
在此，对于壳体型的功率半导体装置而言，与模塑型不同，在封装部件的填充时利用模具进行加压较为困难，封装部件向间隙等的浸透(填充)依赖于自然的浸透性，因此与模塑型相比封装部件更加难以填充。特别地，对于作为这样的装置的一种的、将配线部件与壳体进行了一体化的装置而言，根据壳体的组装状态的不同，配线部件容易发生倾斜，半导体元件与配线部件之间的间隔容易波动。因此，间隔容易变小，焊料容易变得供给过剩而向接合区域外部润湿延展，因此封装部件难以填充的倾向变得显著。
在此，在封装部件由于上述理由等没有填充至间隙处的情况下，绝缘性当然会降低，不仅如此，封装部件对配线部件与半导体元件之间的接合部进行约束的机械强度也会降低。其结果，半导体元件、焊料接合部无法承受由温度变化而产生的热应力，产生可靠性降低的问题。
因此，为了防止上述这样的焊料的润湿延展，在专利文献1中提出了在配线部件中设置比半导体元件的上表面电极小的凸起这样的结构。根据这样的结构，将剩余的焊料在凸起的侧部作为填角(fillet)而进行吸收，因而能够将焊料保留在上表面电极的内侧。但是，剩余焊料有时仍然会过度地润湿延展，封装部件的填充变得不充分。
发明内容
因此，本发明的功率半导体就是鉴于上述问题而提出的，其目的在于提供一种能够提高封装部件的填充性的技术。
本发明所涉及的功率半导体装置具备：绝缘基板；半导体元件，其具有与所述绝缘基板接合的下表面、和设置有电极的上表面；壳体，其形成以所述绝缘基板的、接合有所述半导体元件的面为底面的容器体；板状的配线部件，其向侧方延伸设置，具有与所述壳体进行了一体化的第1部分、和在所述容器体内位于所述半导体元件的所述电极的上方的第2部分；以及封装部件，其填充在所述容器体内，对该容器体内的所述配线部件进行覆盖，在所述配线部件的所述第2部分处，设置有：凸出部，其向所述半导体元件的所述电极侧凸出，通过焊料与该电极进行接合；以及贯穿孔，其穿过所述凸出部而在厚度方向上贯穿所述第2部分。
发明的效果
根据本发明，能够抑制在半导体元件与配线部件之间产生封装部件难以填充的狭窄间隙，因而能够提高封装部件的填充性。
附图说明
图1是表示实施方式1所涉及的功率半导体装置的结构的斜视图。
图2是表示实施方式1所涉及的功率半导体装置的结构的一部分的斜视图。
图3是表示实施方式1所涉及的功率半导体装置的结构的剖视图。
图4是表示变形例所涉及的功率半导体装置的结构的一部分的斜视图。
图5是表示变形例所涉及的功率半导体装置的结构的剖视图。
图6是表示实施方式2所涉及的功率半导体装置的结构的剖视图。
标号的说明
1绝缘基板，2半导体元件，2a上表面电极，4壳体，5配线部件，5b凸出部，5ba平面部，5c贯穿孔，5d凹部，6焊料，9封装部件，10阻焊膜。
具体实施方式
<实施方式1>
使用图1至图3对本发明的实施方式1所涉及的功率半导体装置进行说明。图1是表示功率半导体装置的结构的斜视图，图2是为了便于说明而从图1中省略了封装部件9的图示而得到的斜视图。图3是表示沿图2的A－A线的结构的剖视图。
如图1～图3所示，本实施方式1所涉及的功率半导体装置具备绝缘基板1、半导体元件2、焊料等接合部件3、壳体4、配线部件5、焊料6、导线7、外部信号端子8、以及封装部件9。
在绝缘基板1的上表面(一个面)设置有电路图案1a。
半导体元件2例如是二极管或者IGBT(InsulatedGateBipolarTransistor)。在本实施方式1中，假设该半导体元件2是在对车辆的电动机进行控制的逆变器、或者车辆的再生用转换器等中使用的。这里所说的车辆例如包含电动汽车、电气列车等。
半导体元件2的下表面通过接合部件3与电路图案1a接合。即，半导体元件2经由电路图案1a以及接合部件3与绝缘基板1接合。此外，在本实施方式1中，2个半导体元件2与绝缘基板1接合。
在各半导体元件2的、与绝缘基板1接合的下表面的相反侧的上表面，设置有作为电极的上表面电极2a。上表面电极2a在1个半导体元件2中既可以设置于1处，也可以设置大于或等于2处。在上表面电极2a的表面，也可以形成用于良好地与焊料6接合的例如由金、镍或钛等构成的金属膜。
壳体4是包围半导体元件2的外周的周壁体。在本实施方式1中，壳体4安装在绝缘基板1上，形成以该绝缘基板1的、接合有半导体元件2的面为底面的容器体。这里形成的容器体是无盖的容器体。壳体4的材质例如适用PPS(聚苯硫醚)或PBT(聚对苯二甲酸丁二醇酯)等热塑性树脂等。
配线部件5例如是通过冲压加工而成型的板状的部件，向侧方延伸设置。在此，配线部件5与绝缘基板1以及半导体元件2平行地延伸设置。配线部件5的材质例如适用铜、铝或者它们的复合材料等。
配线部件5具有与壳体4进行了一体化的一端部分(第1部分)。在本实施方式1中，配线部件5的一端部分中的前端部从壳体4的上表面部露出设置，作为与外部连接的连接端子5a使用。
另外，配线部件5具有在由绝缘基板1和壳体4形成的上述容器体内，位于半导体元件2的上表面电极2a的上方的接合部分(第2部分)。在本实施方式1中，配线部件5针对每个上表面电极2a具有接合部分，其中的1个接合部分配置在配线部件5的另一端附近。关于该配线部件5的接合部分，在后面详细进行说明。
焊料6将半导体元件2的上表面电极2a与配线部件5的接合部分进行接合。由此，将半导体元件2与配线部件5进行电连接。在本实施方式1中，作为其结果，一个半导体元件2经由焊料6以及配线部件5与另一个半导体元件2进行电连接。此外，焊料6的材质并不特别指定，例如适用SnAgCu类、SnCu类、SnSb类等。
外部信号端子8例如通过与配线部件5相同的加工以及材质形成。外部信号端子8也与配线部件5相同地与壳体4进行一体化。并且，外部信号端子8的一端部分经由导线7与1个半导体元件2连接，外部信号端子8的另一端部分从壳体4的上表面部露出设置，作为与外部连接的连接端子使用。
封装部件9填充在由绝缘基板1和壳体4形成的上述容器体内，对该容器体内的配线部件5、绝缘基板1的电路图案1a、半导体元件2以及焊料3等进行覆盖。
封装部件9的材质例如适用环氧树脂等热硬化性树脂，为了调整机械性能，根据需要含有二氧化硅等粉末(填料)。封装部件9保护电路部件不受污损、冲击的损害，或者确保绝缘性。另外，封装部件9通过对配线部件5与半导体元件2之间的接合部、或者绝缘基板1与半导体元件2之间的接合部进行约束，从而抑制由配线部件5与半导体元件2之间的热膨胀率之差、或者绝缘基板1与半导体元件2之间的热膨胀率之差产生的热应力所造成的损伤。因此，如果适当地填充封装部件9，由封装部件9进行的约束是充分的，则能够提高功率半导体装置的可靠性。
<配线部件5的接合部分>
下面，对配线部件5中的、位于半导体元件2的上表面电极2a的上方的接合部分详细进行说明。
在配线部件5的接合部分处，设置有向半导体元件2的上表面电极2a侧凸出的凸出部5b，凸出部5b通过焊料6与该上表面电极2a接合。在本实施方式1中，配线部件5的凸出部5b的前端部包含有平面部5ba，该平面部5ba相对于凸出部5b以外的配线部件5形成为台阶状。另外，凸出部5b(平面部5ba)的外周形状与半导体元件2的上表面电极2a的外周形状大致相同，半导体元件2的上表面电极2a的外周与配线部件5的凸出部5b的外周的位置对齐。此外，剖面为台梯状的凸出部5b能够通过半冲裁加工等冲压加工而形成。出于加工上的限制，凸出部5b的高度例如优选以板厚的一半左右为限度，但并不限定于此。
在配线部件5的接合部分处，设置有穿过凸出部5b(平面部5ba)而在厚度方向上贯穿接合部分的贯穿孔5c。另外，在配线部件5的、与设置有凸出部5b的面相反侧的面(上表面)处，设置有与贯穿孔5c连通的凹部5d。
<实施方式1的总结>
在实际的制造中，配线部件5的加工精度、一体化有配线部件5的壳体4的尺寸精度、以及壳体4与绝缘基板1的组装精度等存在限制。因此，难以将半导体元件2的上表面电极2a与配线部件5的凸出部5b(平面部5ba)之间的间隔即焊料6的厚度设为固定，上述间隔发生波动。但是，单独地测定上述间隔的波动，根据该测定结果单独地调整焊料6的量并进行供给会导致生产率的降低，因此并不现实。
与此相对，在本实施方式1所涉及的功率半导体装置中，即使在上述间隔小于所设想的大小，焊料6变得供给过剩的情况下，也能够使过剩部分溢至设置于配线部件5的贯穿孔5c。因此，即使上述间隔存在波动，也能够抑制焊料6向上表面电极2a以及凸出部5b(平面部5ba)的外侧润湿延展。由此，能够抑制在半导体元件2与配线部件5之间产生封装部件9难以填充的狭窄间隙，因而能够提高封装部件9的填充性。其结果，能够实现可靠性高的功率半导体装置。
另外，在本实施方式1中，凸出部5b的前端部包含平面部5ba。因此，通过边缘效应，能够抑制焊料6向上表面电极2a以及凸出部5b(平面部5ba)的外侧润湿延展。由此，能够进一步抑制狭窄间隙的产生，因而能够进一步提高封装部件9的填充性。
另外，在本实施方式1中，凸出部5b向上表面电极2a侧凸出，半导体元件2的上表面电极2a的外周与配线部件5的凸出部5b的外周的位置对齐。由此，在与上表面电极2a以及凸出部5b(平面部5ba)的外周线紧邻的外侧处，能够使配线部件5与半导体元件2之间的间隙较宽。因此，封装部件9变得容易填充至配线部件5与半导体元件2之间的间隙处，因此能够进一步提高封装部件9的填充性。
另外，在本实施方式1中，在配线部件5的、与设置有凸出部5b的面相反侧的面(上表面)处，设置有与贯穿孔5c连通的凹部5d。由此，溢至贯穿孔5c中的焊料6即使试图从配线部件5的上表面隆起，也被收容至凹部5d内。因此，不需要将对上述容器体内的配线部件5进行覆盖的封装部件9不必要地增厚，因此能够期待装置的小型化。
<实施方式1的变形例>
图4是与图2相同地省略封装部件9的图示而示出实施方式1的变形例所涉及的功率半导体装置的结构的斜视图，图5是表示沿图4的A－A线的结构的剖视图。
在本变形例所涉及的功率半导体装置中，具有与图1～图3所示的实施方式1相同的结构。但是，在本变形例所涉及的功率半导体装置中，以凸出部5b的周围的一部分(在此是大致四边形的一边)与配线部件5的另一端面对齐的方式设置凸出部5b。根据这种本变形例所涉及的功率半导体装置，半导体元件2由配线部件5覆盖的面积，即在半导体元件2与配线部件5之间形成的间隙的面积减少，因此能够提高封装部件9的填充性。
<实施方式2>
图6是对于本发明的实施方式2所涉及的功率半导体装置，与实施方式1的图3相同地示出沿图2的A－A线的结构的剖视图。此外，在本实施方式2所涉及的功率半导体装置中，对与以上说明的结构要素相同或相类似的结构要素标注相同的参考标号，主要说明不同的部分。
本实施方式2所涉及的功率半导体装置是在实施方式1的结构的基础上追加了由焊料6难以润湿的材料构成的膜即阻焊膜(solderresist)10而得到的。该阻焊膜10与配线部件5的凸出部5b的外周邻接设置。在本实施方式2中，阻焊膜10在配线部件5的凸出部5b侧的下表面中的、至少包围凸出部5b的区域上形成。
根据以上这样的本实施方式2所涉及的功率半导体装置，通过阻焊膜10，能够进一步抑制焊料6向凸出部5b的外侧润湿延展。由此，能够进一步抑制封装部件9难以填充的狭窄间隙的产生，因而能够进一步提高封装部件9的填充性。
<实施方式1及2的变形例>
在以上说明的实施方式1及2中，设想的是半导体元件2由Si(硅)构成。但并不限定于此，半导体元件2也可以由利用带隙更大的材料形成的半导体(宽带隙半导体)构成。作为这种材料，例如适用SiC(碳化硅)、GaN(氮化镓类)、金刚石。
利用具备这样的半导体元件2的功率半导体装置，能够进行高温动作。此外，虽然可以想到作用于半导体元件2的热应力随着高温动作而变大，但利用实施方式1及2的结构，封装部件9向半导体元件2与配线部件5之间的间隙的填充性提高，因而能够确保可靠性以及绝缘性。因此，本发明在半导体元件2由宽带隙半导体构成的情况下特别有效。
另外，以上说明的实施方式1及2是利用壳体4包围半导体元件2，利用封装部件9进行封装的壳体型的功率半导体装置。但并不限定于此，也可以是通过模具使外形成型的模塑型的功率半导体装置。
但是，对于壳体型的功率半导体装置而言，与模塑型不同，在封装部件9的填充时利用模具进行加压较为困难，封装部件9向间隙等的浸透(填充)依赖于自然的浸透性，因此与模塑型相比封装部件9更加难以填充。因此，本发明如实施方式1及2所示在壳体型的功率半导体装置中特别有效。
此外，本发明能够在该发明的范围内将各实施方式以及各变形例进行自由组合，或者适当地对各实施方式以及各变形例进行变形、省略。

Claims (7)

1.一种功率半导体装置，具备：
绝缘基板；
半导体元件，其具有与所述绝缘基板接合的下表面、和设置有电极的上表面；
壳体，其形成以所述绝缘基板的、接合有所述半导体元件的面为底面的容器体；
板状的配线部件，其向侧方延伸设置，具有与所述壳体进行了一体化的第1部分、和在所述容器体内位于所述半导体元件的所述电极的上方的第2部分；以及
封装部件，其填充在所述容器体内，对该容器体内的所述配线部件进行覆盖，
在所述配线部件的所述第2部分处，设置有：
凸出部，其向所述半导体元件的所述电极侧凸出，通过焊料与该电极进行接合；以及
贯穿孔，其穿过所述凸出部而在厚度方向上贯穿所述第2部分。
2.根据权利要求1所述的功率半导体装置，
所述配线部件的所述凸出部的前端部包含平面部，该平面部相对于该凸出部以外的所述配线部件形成为台阶状。
3.根据权利要求1或2所述的功率半导体装置，
在所述配线部件的、与设置有所述凸出部的面相反侧的面处，设置有与所述贯穿孔连通的凹部。
4.根据权利要求1或2所述的功率半导体装置，
还具备：
阻焊膜，其与所述配线部件的所述凸出部的外周邻接设置。
5.根据权利要求1或2所述的功率半导体装置，
所述半导体元件的所述电极的外周与所述配线部件的所述凸出部的外周的位置对齐。
6.根据权利要求1或2所述的功率半导体装置，
所述半导体元件由宽带隙半导体构成。
7.根据权利要求1或2所述的功率半导体装置，
所述半导体元件在对车辆的电动机进行控制的逆变器、或者车辆的再生用转换器中使用。
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