CN109952639A - 半导体装置、逆变器单元及汽车 - Google Patents

半导体装置、逆变器单元及汽车 Download PDF

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Publication number
CN109952639A
CN109952639A CN201680090636.7A CN201680090636A CN109952639A CN 109952639 A CN109952639 A CN 109952639A CN 201680090636 A CN201680090636 A CN 201680090636A CN 109952639 A CN109952639 A CN 109952639A
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lead frame
semiconductor chip
semiconductor device
semiconductor
shell
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CN109952639B (zh
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中田洋辅
井本裕儿
佐佐木太志
川濑达也
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

半导体芯片(2a)接合于导体基板(1a)的上表面。与半导体芯片(2a)相比控制端子(11a)配置于外侧，该控制端子通过导线(12a)与半导体芯片(2a)的控制电极连接。壳体(10)包围半导体芯片(2a)。封装材料(13)对半导体芯片(2a)进行封装。引线框架(4)具有：接合部(4a)，其接合于半导体芯片(2a)；以及垂直部(4b)，其装入于壳体(10)，从接合部(4a)引出到控制端子(11a)的外侧，相对于半导体芯片(2a)的上表面向垂直方向立起。

Description

半导体装置、逆变器单元及汽车
技术领域
本发明涉及将引线框架接合于半导体芯片而引出电流的半导体装置。
背景技术
公开了如下半导体装置(例如，参照专利文献1)，即，一体形成壳体和引线框架，将引线框架直接焊料接合于半导体芯片而引出电流。
另外，还公开了通过带状键合件引出电流的半导体装置(例如，参照专利文献2)。带状键合件是在向半导体元件接合的工序中进行弯曲加工的部件。由于厚膜化存在限制，因此为了确保通电电流，需要连接多根带状键合件。因此，装置变大。另一方面，引线框架是在向半导体元件连接的工序前，将与通电电流对应的截面积的板材通过冲裁加工、弯曲加工而形成为任意形状，使用例如焊料材料等与半导体元件连接的部件。针对大于或等于1个半导体元件，通过单个引线框架引出电流。
另外，公开了如下半导体装置(例如，参照专利文献3)，即，引出电流的主端子垂直地设置于中央部。但是，不能在半导体装置之上直接连接控制电路。因此，需要在使用汇流条而向半导体装置的外部引出电流后连接控制基板，因此结构部件增多，装置变大。另外，目的在于，通过垂直地设置主端子，从而确保绝缘性，例如在耐压大于或等于1,700V的高耐压等级的产品中是通常的构造。但是，为了确保绝缘性，难以紧邻地设置控制端子。另外，由于汽车用半导体装置使用设置于汽车内部的电池电压而对半导体装置进行驱动，因此其耐压可以小于或等于1,400V。因此，不需要上述那样的高耐压等级的半导体装置的设计思想，而是与半导体装置的控制端子相比将主电极引出到外侧。因此，即使将控制基板直接安装于半导体装置，也能够相对于半导体装置输入输出电流。
专利文献1：国际公开第2015/029186号
专利文献2：日本特开2011-114137号公报
专利文献3：日本特开2001-135788号公报
发明内容
需要与电流容量的增加对应地使引线框架的截面积增大。但是，如果将引线框架增厚，则来自引线框架的应力增大。并且，为了通过弯曲加工将引线框架形成为任意形状，在厚度上存在限制。因此，必须将引线框架的宽度拓宽。
另外，为了大电流容量化，需要使多个半导体芯片并联动作。为了向多个半导体芯片供给控制信号，需要分别设置控制端子。因此，控制端子的根数增加，所以不能够确保用于将引线框架引出到控制端子外侧的空间。
另外，在从多个半导体装置引出电流的情况下，为了确保电流容量而需要将框架的宽度拓宽，进而成为使半导体装置大型化的原因。另外，与引出各自不同相的输出的情况相比，在从多个半导体芯片引出单一的输出的情况下，不需要绝缘距离，会更接近地配置芯片。因此，不能够确保用于将引线框架引出到控制端子外侧的空间。
特别地，在以高电流密度使用SiC半导体芯片等的情况下，控制端子和引线框架的宽度限制半导体装置的缩小，成为小型化、低电感化、低成本化的障碍。
本发明就是为了解决上述的课题而提出的，其目的在于得到无需使安装平面面积增加就能够使引线框架的宽度增加的半导体装置、逆变器单元及汽车。
本发明涉及的半导体装置的特征在于具备：导体基板；半导体芯片，其接合于所述导体基板的上表面；控制端子，其与所述半导体芯片相比配置于外侧，通过导线与所述半导体芯片的控制电极连接；壳体，其包围所述半导体芯片；引线框架，其具有接合部、垂直部和应力缓和部，该接合部接合于所述半导体芯片的上表面，该垂直部被装入于所述壳体，引出到所述控制端子的外侧，该应力缓和部将所述接合部和所述垂直部连接，缓和向所述半导体芯片的应力；以及封装材料，其对所述半导体芯片进行封装，所述垂直部相对于所述半导体芯片的所述上表面而向垂直方向立起。
发明的效果
在本发明中，引线框架的垂直部相对于半导体芯片的上表面向垂直方向立起。因此，无需使安装平面面积增加就能够使引线框架的宽度增加。
附图说明
图1是表示本发明的实施方式1涉及的半导体装置的俯视图。
图2是将图1的区域A放大后的斜视图。
图3是沿图1的I-II的剖视图。
图4是沿图1的III-IV的剖视图。
图5是表示图1的半导体装置的半导体芯片的排列的俯视图。
图6是表示将本发明的实施方式2涉及的引线框架和壳体分解后的状态的俯视图。
图7是表示本发明的实施方式3涉及的半导体装置的剖视图。
图8是表示本发明的实施方式3涉及的半导体装置的剖视图。
具体实施方式
参照附图对本发明的实施方式涉及的半导体装置、逆变器单元及汽车进行说明。对相同或对应的结构要素标注相同标号，有时省略重复说明。
实施方式1.
图1是表示本发明的实施方式1涉及的半导体装置的俯视图。图2是将图1的区域A放大后的斜视图。图3是沿图1的I-II的剖视图。图4是沿图1的III-IV的剖视图。图5是表示图1的半导体装置的半导体芯片的排列的俯视图。
在导体基板1a之上相邻地配置多个半导体芯片2a。在导体基板1b之上相邻地配置多个半导体芯片2b。半导体芯片2a的下表面电极通过焊料3a接合于导体基板1a的上表面。半导体芯片2b的下表面电极通过焊料3b接合于导体基板1b的上表面。
引线框架4的下表面通过焊料3c接合于多个半导体芯片2a的上表面电极，通过焊料3d接合于导体基板1b的上表面。引线框架5接合于导体基板1a，经由导体基板1a与半导体芯片2a的下表面电极电连接。引线框架6的下表面通过焊料3e接合于多个半导体芯片2b的上表面电极，与半导体芯片2b的上表面电极电连接。
由此，从半导体芯片2a、2b输出电流。半导体芯片2a、2b的上表面电极及下表面电极由包含镍的材料构成，例如，能够通过湿式镀覆法、溅射或蒸镀等气相沉积法形成。
半导体芯片2a构成上桥臂，半导体芯片2b构成下桥臂。通过相邻地排列3组该上下桥臂的组合，从而由1个半导体装置构成6相全桥电路。
绝缘基板7设置于导体基板1a、1b的下表面。由于通过该绝缘基板7能够容易地确保半导体芯片2a、2b与外部的绝缘性，因此半导体装置的操作性和可靠性提高。
在绝缘基板7的下表面设置有冷却板8。在冷却板8的下表面设置有冷却用的多个凸起9。由此，冷却板8本身成为冷却鳍片，因此能够通过直接使冷却水与半导体装置接触而高效地对半导体装置进行水冷。或者，也可以例如经由散热脂将冷却板8与冷却鳍片热接合。由此，能够以简易的构造来实现半导体装置的冷却。
壳体10包围半导体芯片2a、2b。多个控制端子11a与半导体芯片2a相比配置于外侧。多个控制端子11b与半导体芯片2b相比配置于外侧。控制端子11a、11b装入于壳体10，端子部和焊盘部从壳体10露出。控制端子11a、11b的端子部与外部的控制基板连接。控制端子11a的焊盘部通过铝导线等导线12a与半导体芯片2a的控制电极连接。控制端子11b的焊盘部通过铝导线等导线12b与半导体芯片2b的控制电极连接。由此，能够通过外部的控制基板对半导体芯片2a、2b进行控制。控制端子11a、11b是以与在多个半导体芯片2a、2b的表面之上设置的控制电极相同数量设置的。
封装材料13对半导体芯片2a、2b进行封装。引线框架4、5、6的一部分也被封装材料13覆盖。由此，能够容易地确保引线框架4、5、6与导体基板1a、1b、控制端子11a、11b之间的绝缘性，安装成品率及可靠性提高。
引线框架4具有接合部4a、垂直部4b、应力缓和部4c及电流输入输出部4d。引线框架5具有接合部5a、垂直部5b、应力缓和部5c及电流输入输出部5d。引线框架6具有接合部6a、垂直部6b、应力缓和部6c及电流输入输出部6d。引线框架4、5、6由例如以铜为主的材料构成。在通过冲压加工将轧制后的铜板冲裁为任意形状后，通过弯曲加工而形成接合部4a、5a、6a及垂直部4b、5b、6b等。
接合部4a接合于半导体芯片2a的上表面，从半导体芯片2a朝向壳体10延伸。垂直部4b装入于壳体10，从接合部4a引出到控制端子11a、11b的外侧，相对于半导体芯片2a、2b的上表面向垂直方向立起。
接合部5a接合于导体基板1a的上表面。垂直部5b装入于壳体10，从接合部5a引出到控制端子11a、11b的外侧，相对于半导体芯片2a、2b的上表面向垂直方向立起。接合部6a接合于半导体芯片2b的上表面，从半导体芯片2b向壳体10延伸。垂直部6b装入于壳体10，从接合部6a引出到控制端子11a、11b的外侧，相对于半导体芯片2a、2b的上表面向垂直方向立起。
应力缓和部4c将接合部4a和垂直部4b连接。应力缓和部5c将接合部5a和垂直部5b连接。应力缓和部6c将接合部6a和垂直部6b连接。应力缓和部4c、5c、6c通过引线框架4、5、6的弯曲加工，例如形成为台阶状。通过应力缓和部4c、5c、6c，能够缓和将引线框架4、5、6分别接合于半导体芯片2a、导体基板1a及半导体芯片2b时的向半导体芯片2a、导体基板1a及半导体芯片2b的应力。因此，能够提高安装面积小的半导体装置的制造成品率和可靠性。
电流输入输出部4d、5d、6d与控制端子11a、11b相比位于半导体装置的外侧，是通过以变得与半导体芯片2a、2b的上表面平行的方式将垂直部4b、5b、6b垂直地折弯而形成的。例如，在壳体10设置槽，在槽中嵌入螺母。对引线框架4、5、6进行弯曲加工而通过电流输入输出部4d、5d、6d将槽填塞。由此，能够通过螺钉紧固将电流输入输出部4d、5d、6d和外部电极紧固。
在本实施方式中，引线框架4、5、6的垂直部4b、5b、6b相对于半导体芯片2a、2b的上表面向垂直方向立起。因此，无需使安装平面面积增加就能够使引线框架4、5、6的宽度增加。由此，能够使引线框架4、5、6的截面积增加而应对大电流容量。另外，由于能够降低寄生电感，因此能够抑制在半导体芯片2a、2b通断时产生的浪涌电压。
另外，在将并联驱动的多个半导体芯片接近地配置的情况下，也能够配置引线框架。因此，对于并联驱动半导体芯片而引出单一的输出的半导体装置，本实施方式是有效的。
另外，在通过模具固定了引线框架4、5、6和控制端子11a、11b的状态下注入壳体树脂，从而构成将引线框架4、5、6、控制端子11a、11b与壳体10一体化的插入壳体。由此，能够进行引线框架4、5、6的定位，因此引线框架4、5、6的位置精度提高。另外，由于能够确保引线框架4、5、6彼此的绝缘，因此安装成品率及可靠性提高。此外，引线框架4、5、6中的至少接合部4a、5a、6a、应力干涉部4c、5c、6c及电流输入输出部4d、5d、6d从壳体10露出。各引线框架4、5、6以壳体树脂能够发挥充分的绝缘耐压的距离分离。例如，在壳体树脂使用PPS的情况下，优选不仅考虑绝缘耐压，还考虑PPS填埋性和引线框架间隔的制造公差，将引线框架间隔设为分离大于或等于1mm。
另外，为了大电流化，相对于1个开关相而并联地连接多个半导体芯片2a。引线框架4从多个半导体芯片2a引出1个AC输出。这样，通过对多个半导体芯片进行并联驱动，能够增加电流容量。即使增加并联驱动数量而增加控制端子11a、11b的根数，通过本实施方式也能够消除与引线框架4、5、6的空间争夺，因此能够缩小安装平面面积。
引线框架5的垂直部5b和引线框架6的垂直部6b隔着绝缘层即壳体树脂而相对。由此，将引线框架5和引线框架6的距离缩小，使重叠的区域增加，因此能够降低寄生电感。因此，能够抑制通断时的浪涌电压。
实施方式2.
图6是表示将本发明的实施方式2涉及的引线框架和壳体分解后的状态的俯视图。引线框架4、5、6嵌合于壳体10。在壳体10设置有用于分别嵌合引线框架4、5、6的狭缝14a、14b、14c。通过将引线框架4、5、6的垂直部4b、5b、6b分别插入至狭缝14a、14b、14c，能够进行定位。
在对并联动作的半导体芯片2a、2b的数量或大小进行变更的情况下，通常，是分别对引线框架4、5、6的冲裁模具和弯曲模具、壳体10的形成模具进行变更。但是，由于壳体10的形成模具容易大型化，制造成本增大，因此优选不变更壳体10的模具。相对于此，通过如本实施方式那样单独准备壳体10和引线框架4、5、6，从而无需变更壳体10的形状，仅进行引线框架4、5、6的形状变更，就能够应对半导体装置的多样化。
另外，嵌合于壳体10的引线框架4、5、6在半导体芯片2a、2b的大致垂直方向具有自由度。因此，例如，与将壳体10和引线框架4、5、6一体形成的情况相比，能够释放对引线框架4、5、6和半导体芯片2a、2b进行焊料接合时的应力。其结果，能够提高半导体装置的制造成品率和可靠性。优选引线框架4、5、6的俯视观察的位置精度高，其能够通过在壳体10设置的狭缝的公差来确保。因此，能够使引线框架4、5、6的向纵向的移动具有自由度，而不会使引线框架4、5、6的位置精度显著地恶化。
此外，也可以将引线框架4、5、6中的至少插入至狭缝14a、14b、14c的垂直部4b、5b、6b预先由与壳体10等同的材料进行覆盖。另外，由于彼此接近地配置的2对引线框架5、6要求相互的位置精度，因此优选预先由壳体树脂一体形成。
实施方式3.
图7及图8是表示本发明的实施方式3涉及的半导体装置的剖视图。图7与沿图1的I-II的剖面对应，图8与沿图1的III-IV的剖视图对应。引线框架4、5、6的垂直部4b、5b、6b弯曲为U字状。由此，即使在与通电电流对应地拓宽引线框架4、5、6的宽度的情况下，也能够抑制封装件纵向尺寸，即半导体装置的高度。
在形成半桥或全桥的半导体装置的情况下，为了装置的小型化和寄生电感的降低，优选将与电容器连接的引线框架5、6彼此接近地配置。在引线框架5、6的U字部分各自具有供壳体树脂进入的开口。配置为各自的U字部分的开口互相重合，通过壳体树脂进行固定。由此，能够进一步增加重叠的区域，因此能够进一步降低寄生电感。另外，能够确保位置精度和引线框架彼此的绝缘。例如，在将PPS用作壳体树脂的情况下，只要分离0.1mm左右就能够使壳体树脂埋入。为了防止空气积存于U字内部，促进树脂填充，优选在U字底部设置贯穿孔。
实施方式1～3涉及的半导体装置用于作为对汽车动力用电动机进行驱动的电源而配置在汽车框体的逆变器单元。由此，能够将逆变器单元小型化，因此能够在汽车的框体内一体化地容纳例如电动机模块或电池模块和逆变器单元。
半导体芯片2a、2b为IGBT、MOSFET、肖特基势垒二极管等。此外，半导体芯片2a、2b并不限于由硅形成，也可以由与硅相比带隙大的宽带隙半导体形成。宽带隙半导体例如是碳化硅、氮化镓类材料、或金刚石。就由上述的宽带隙半导体形成的半导体芯片而言，由于耐压性、容许电流密度高，因此能够小型化。通过使用该小型化的半导体芯片，从而组装有该半导体芯片的半导体装置也能够小型化。另外，由于半导体芯片的耐热性高，因此能够将散热器的散热鳍片小型化，能够将水冷部空冷化，因此能够进一步将半导体装置小型化。另外，由于半导体芯片的功率损耗低且高效，因此能够使半导体装置高效化。
另一方面，由于由碳化硅等的半导体芯片2a、2b的寄生电容和半导体装置的寄生电感之积决定的时间常数，容易产生阻尼振荡。相对于此，由于本实施方式涉及的半导体装置能够抑制寄生电感的增加，因此能够以更快的通断速度使半导体芯片2a、2b动作。
另外，就碳化硅等的半导体芯片2a、2b而言，由于制造成品率的限制，难以实现芯片的大面积化。因此，为了应对大电流容量，优选使多个半导体芯片2a、2b并联动作。在该情况下，通过本实施方式也能够降低半导体装置的安装面积和寄生电感这两者。通过降低安装面积，从而能够降低半导体装置内部的应力，例如，在将杨氏模量高的碳化硅用于半导体芯片2a、2b的情况下，也能够降低由半导体芯片2a、2b和周边部件之间的热膨胀系数差产生的应力。其结果，能够提高半导体装置的可靠性。
标号的说明
1a、1b导体基板，2a、2b半导体芯片，4、5、6引线框架，4a、5a、6a接合部，4b、5b、6b垂直部，4c、6c应力缓和部，7绝缘基板，8冷却板，9凸起，10壳体，11a、11b控制端子，12a、12b导线，13封装材料。
权利要求书(按照条约第19条的修改)
1.一种半导体装置，其特征在于，具备：
导体基板；
半导体芯片，其接合于所述导体基板的上表面；
控制端子，其与所述半导体芯片相比配置于外侧，通过导线与所述半导体芯片的控制电极连接；
壳体，其包围所述半导体芯片；
引线框架；以及
封装材料，其对所述半导体芯片进行封装，
所述引线框架具备：
接合部，其接合于所述半导体芯片；以及
垂直部，其装入于所述壳体，从所述接合部引出到所述控制端子的外侧，相对于所述半导体芯片的上表面向垂直方向立起，
所述垂直部的至少一部分形成于所述控制端子的内侧。
2.根据权利要求1所述的半导体装置，其特征在于，
所述垂直部从所述控制端子的内侧形成至外侧。
3.根据权利要求1或2所述的半导体装置，其特征在于，
所述引线框架还具有应力缓和部，该应力缓和部将所述接合部和所述垂直部连接，缓和向所述半导体芯片的应力。
4.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
所述半导体芯片具有构成上桥臂的第1半导体芯片、以及构成下桥臂的第2半导体芯片，
所述引线框架具有与所述第1半导体芯片电连接的第1引线框架、以及与所述第2半导体芯片电连接的第2引线框架，
所述第1引线框架的所述垂直部和所述第2引线框架的所述垂直部隔着绝缘层而相对。
5.根据权利要求1至4中任一项所述的半导体装置，其特征在于，
所述引线框架与所述壳体一体化。
6.根据权利要求1至4中任一项所述的半导体装置，其特征在于，
所述引线框架嵌合于所述壳体。
7.根据权利要求1至4中任一项所述的半导体装置，其特征在于，
所述引线框架的所述垂直部弯曲为U字状。
8.根据权利要求1至7中任一项所述的半导体装置，其特征在于，
所述半导体芯片具有相对于1个开关相而并联地连接的多个半导体芯片，
所述引线框架从所述多个半导体芯片引出1个AC输出。
9.根据权利要求1至8中任一项所述的半导体装置，其特征在于，
还具备在所述导体基板的下表面设置的绝缘基板。
10.根据权利要求9所述的半导体装置，其特征在于，
还具备在所述绝缘基板的下表面设置的冷却板。
11.根据权利要求10所述的半导体装置，其特征在于，
还具备在所述冷却板的下表面设置的冷却用的多个凸起。
12.根据权利要求10所述的半导体装置，其特征在于，
所述冷却板经由散热脂而与冷却鳍片热接合。
13.根据权利要求1至12中任一项所述的半导体装置，其特征在于，
所述引线框架被所述封装材料覆盖。
14.根据权利要求1至13中任一项所述的半导体装置，其特征在于，
所述半导体芯片由宽带隙半导体形成。
15.一种逆变器单元，其特征在于，
具有权利要求1至14中任一项所述的半导体装置，该逆变器单元作为对汽车动力用电动机进行驱动的电源配置于汽车框体。
16.一种汽车，其特征在于，
具有权利要求15所述的逆变器单元。
说明或声明(按照条约第19条的修改)
对权利要求1进行修改，追加了“所述垂直部的至少一部分形成于所述控制端子的内侧”。
追加了新的权利要求2。
将原权利要求2至15分别修改为权利要求3至16。

Claims (15)

1.一种半导体装置，其特征在于，具备：
导体基板；
半导体芯片，其接合于所述导体基板的上表面；
控制端子，其与所述半导体芯片相比配置于外侧，通过导线与所述半导体芯片的控制电极连接；
壳体，其包围所述半导体芯片；
引线框架；以及
封装材料，其对所述半导体芯片进行封装，
所述引线框架具备：
接合部，其接合于所述半导体芯片；以及
垂直部，其装入于所述壳体，从所述接合部引出到所述控制端子的外侧，相对于所述半导体芯片的上表面向垂直方向立起。
2.根据权利要求1所述的半导体装置，其特征在于，
所述引线框架还具有应力缓和部，该应力缓和部将所述接合部和所述垂直部连接，缓和向所述半导体芯片的应力。
3.根据权利要求1或2所述的半导体装置，其特征在于，
所述半导体芯片具有构成上桥臂的第1半导体芯片、以及构成下桥臂的第2半导体芯片，
所述引线框架具有与所述第1半导体芯片电连接的第1引线框架、以及与所述第2半导体芯片电连接的第2引线框架，
所述第1引线框架的所述垂直部和所述第2引线框架的所述垂直部隔着绝缘层而相对。
4.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
所述引线框架与所述壳体一体化。
5.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
所述引线框架嵌合于所述壳体。
6.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
所述引线框架的所述垂直部弯曲为U字状。
7.根据权利要求1至6中任一项所述的半导体装置，其特征在于，
所述半导体芯片具有相对于1个开关相而并联地连接的多个半导体芯片，
所述引线框架从所述多个半导体芯片引出1个AC输出。
8.根据权利要求1至7中任一项所述的半导体装置，其特征在于，
还具备在所述导体基板的下表面设置的绝缘基板。
9.根据权利要求8所述的半导体装置，其特征在于，
还具备在所述绝缘基板的下表面设置的冷却板。
10.根据权利要求9所述的半导体装置，其特征在于，
还具备在所述冷却板的下表面设置的冷却用的多个凸起。
11.根据权利要求9所述的半导体装置，其特征在于，
所述冷却板经由散热脂而与冷却鳍片热接合。
12.根据权利要求1至11中任一项所述的半导体装置，其特征在于，
所述引线框架被所述封装材料覆盖。
13.根据权利要求1至12中任一项所述的半导体装置，其特征在于，
所述半导体芯片由宽带隙半导体形成。
14.一种逆变器单元，其特征在于，
具有权利要求1至13中任一项所述的半导体装置，该逆变器单元作为对汽车动力用电动机进行驱动的电源配置于汽车框体。
15.一种汽车，其特征在于，
具有权利要求14所述的逆变器单元。
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