CN105493272B - 半导体模块、半导体装置以及汽车 - Google Patents

半导体模块、半导体装置以及汽车 Download PDF

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CN105493272B
CN105493272B CN201380079233.9A CN201380079233A CN105493272B CN 105493272 B CN105493272 B CN 105493272B CN 201380079233 A CN201380079233 A CN 201380079233A CN 105493272 B CN105493272 B CN 105493272B
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semiconductor module
resin
base plate
insulating substrate
conductive pattern
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CN105493272A (zh
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川濑达也
宫本升
石原三纪夫
藤野纯司
井本裕儿
吉松直树
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Mitsubishi Electric Corp
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Abstract

基座板(1)具有固定面和散热面，该散热面是与固定面相反的面。绝缘基板(3)与基座板(1)的固定面接合。导电图案(4、5)设置在绝缘基板(3)之上。在导电图案(4)之上接合有半导体芯片(7、8)。Al导线(12)将半导体芯片(8)的上表面和导电图案(5)连接。绝缘基板(3)、导电图案(4、5)、半导体芯片(7～10)以及Al导线(11～13)由树脂(16)封装。基座板(1)具有金属部(19)和加固件(20)，该加固件(20)设置在金属部(19)内。加固件(20)的杨氏模量比金属部(19)的杨氏模量高。

Description

半导体模块、半导体装置以及汽车
技术领域
本发明涉及在例如车载用电动机控制中使用的半导体模块以及半导体装置、和使用它们的汽车。
背景技术
在灌封(potting)树脂封装型的半导体模块中，在基座板之上依次载置绝缘基板、导电图案、半导体芯片，用壳体将它们包围，利用灌封树脂对壳体内部进行封装(例如，参照专利文献1)。
专利文献1：日本特开平5－304248号公报
发明内容
灌封树脂封装型的半导体模块构成为，经由绝缘基板将基座板和金属板接合。在基座板和导电图案的材料不同的情况下，两者的线膨胀系数不同，因此发生由热造成的大的翘曲。即便使两者的材质相同，也由于两者的形状差别较大，所以发生翘曲。如果在该状态下将壳体与基座板接合而用灌封树脂进行封装，则难以控制制品的翘曲。其结果，具有P/C(功率循环)、H/C(热循环)性等可靠性降低的问题。
本发明就是为了解决上述课题而提出的，其目的在于，得到能够提高可靠性的半导体模块、半导体装置以及汽车。
本发明所涉及的半导体模块的特征在于，具备：基座板，其具有固定面和散热面，该散热面是与所述固定面相反的面；绝缘基板，其与所述基座板的所述固定面接合；第1及第2导电图案，它们设置在所述绝缘基板之上；半导体芯片，其设置在所述第1导电图案之上；配线部件，其将所述半导体芯片和所述第2导电图案连接；以及树脂，其对所述基座板的所述固定面、所述绝缘基板、所述第1及第2导电图案、所述半导体芯片以及所述配线部件进行封装，所述基座板具有金属部和加固件，该加固件设置在所述金属部内并具有比所述金属部高的杨氏模量。
发明的效果
根据本发明，能够提高可靠性。
附图说明
图1是表示本发明的实施方式1所涉及的半导体模块的剖视图。
图2是表示本发明的实施方式1所涉及的半导体模块的内部的俯视图。
图3是表示本发明的实施方式1所涉及的半导体模块的电路图。
图4是表示本发明的实施方式1所涉及的半导体装置的剖视图。
图5是表示本发明的实施方式1所涉及的汽车的图。
图6是表示本发明的实施方式1所涉及的半导体模块的制造工序的剖视图。
图7是表示本发明的实施方式1所涉及的半导体模块的制造工序的俯视图。
图8是表示本发明的实施方式1所涉及的半导体模块的制造工序的剖视图。
图9是表示本发明的实施方式1所涉及的半导体模块的制造工序的剖视图。
图10是表示本发明的实施方式1所涉及的半导体模块的制造工序的剖视图。
图11是表示本发明的实施方式1所涉及的半导体模块的制造工序的剖视图。
图12是表示本发明的实施方式2所涉及的半导体模块的剖视图。
图13是表示本发明的实施方式2所涉及的半导体模块的内部的俯视图。
图14是表示本发明的实施方式3所涉及的半导体模块的剖视图。
图15是表示本发明的实施方式4所涉及的半导体模块的剖视图。
图16是表示本发明的实施方式5所涉及的半导体模块的剖视图。
具体实施方式
参照附图，对本发明的实施方式所涉及的半导体模块、半导体装置以及汽车进行说明。对相同或相对应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1
图1是表示本发明的实施方式1所涉及的半导体模块的剖视图。基座板1具有固定面(上表面)以及散热面(下表面)，该散热面(下表面)是与固定面相反的面。基座板1在散热面具有至少1个凸起构造2。该凸起构造2是散热片，提高由流水对基座板1的散热面进行冷却的冷却效率。基座板1和凸起构造2的材质既可以相同，也可以不同。例如，为了提高散热性，作为凸起构造2的材质，也可以使用导热率比基座板1高的材质。
绝缘基板3与基座板1的固定面进行熔液接合(melt-bond)。绝缘基板3的材质是SiN、AlN、AlO3等陶瓷。基座板1的外形为70mm×100mm，厚度为3mm。绝缘基板3的外形比基座板1小一圈，厚度为0.635mm。
导电图案4、5设置在绝缘基板3之上。为了提高散热性，优选将绝缘基板3的厚度设为比基座板1和导电图案4、5的厚度薄。在导电图案4之上经由焊料6接合有半导体芯片7、8，在导电图案5之上经由焊料6接合有半导体芯片9、10。Al导线11将半导体芯片7、8的上表面彼此连接，Al导线12将半导体芯片8的上表面和导电图案5连接，Al导线13将半导体芯片9、10的上表面彼此连接。
对绝缘基板3、导电图案4、5、半导体芯片7～10以及Al导线11～13进行包围的树脂质的壳体14通过粘接剂15粘接于基座板1的固定面。该壳体14内部由树脂16封装。设置有将基座板1的外周部和树脂16的外周部贯穿的孔17。在树脂16的孔17中插入有由屈服强度比基座板1高的材质(Fe等)构成的套环18。
基座板1具有金属部19以及加固件20，该加固件20设置在金属部19内。金属部19的材质是Al或Cu等金属，加固件20的材质是SiN、AlN、AlO3等陶瓷。加固件20的杨氏模量是大于或等于100GPa，比金属部19的杨氏模量(在Al的情况下，是70GPa)高。
金属部19的线膨胀系数是22ppm/℃，加固件20的线膨胀系数是4ppm/℃，包含两者的基座板1整体的线膨胀系数是10～20ppm/℃。与此相对，树脂16的线膨胀系数是8～16ppm/℃，是金属部19的线膨胀系数与加固件20的线膨胀系数之间的数值，因此与基座板1整体的线膨胀系数为相同程度。此外，半导体芯片7～10的线膨胀系数是2.6ppm/℃。
图2是表示本发明的实施方式1所涉及的半导体模块的内部的俯视图。图3是表示本发明的实施方式1所涉及的半导体模块的电路图。在俯视图中省略了树脂16。半导体模块是6合1构造，即，将6个开关元件安装于1个模块的构造。在此，开关元件是IGBT。此外，为了说明的简化，省略了开关元件的栅极电极以及与其连接的端子。
开关元件7a～7c对应于半导体芯片7，二极管8a～8c对应于半导体芯片8，二极管9a～9c对应于半导体芯片9，开关元件10a～10c对应于半导体芯片10。金属框21a～e分别对应于U电极、V电极、W电极、P电极、N电极。
开关元件7a～7c和二极管8a～8c的下表面与导电图案4连接。二极管9a和开关元件10a的下表面与导电图案5a连接，二极管9b和开关元件10b的下表面与导电图案5b连接，二极管9c和开关元件10c的下表面与导电图案5c连接。
Al导线11a将开关元件7a和二极管8a的上表面彼此连接，Al导线11b将开关元件7b和二极管8b的上表面彼此连接，Al导线11c将开关元件7c和二极管8c的上表面彼此连接。
Al导线12a～12c将二极管8a～8c的上表面和导电图案5a～5c分别连接。Al导线13a将二极管9a和开关元件10a的上表面彼此连接，Al导线13b将二极管9b和开关元件10b的上表面彼此连接，Al导线13c将二极管9c和开关元件10c的上表面彼此连接。
Al导线22将开关元件10a、10b的上表面彼此连接，Al导线23将开关元件10b、10c的上表面彼此连接。Al导线24a～24c将开关元件7a～7c的上表面和金属框21a～21c分别连接。Al导线25将导电图案4和金属框21d连接。Al导线26将开关元件10c的上表面和金属框21e连接。
图4是表示本发明的实施方式1所涉及的半导体装置的剖视图。为了冷却图1～3所示的半导体模块27，在半导体模块27的基座板1的散热面侧，安装有冷却夹套28。具体地说，通过使螺钉29穿过半导体模块27的孔17而插入至冷却夹套28的螺钉孔，从而将冷却夹套28安装于半导体模块27。在冷却夹套28的槽中，配置有O型环等封装件30。用屈服强度高的套环18承受由螺钉29的紧固产生的反作用力，因此能够抑制孔17周边的基座板1和树脂16的变形。
图5是表示本发明的实施方式1所涉及的汽车的图。汽车是混合动力汽车或电动汽车。在该汽车内，逆变器31将电池32的直流电流变换为三相交流电流而供给至电动机33。此时，通过由驱动装置34对逆变器31进行驱动而控制交流电流，从而能够对电动机33的输出进行控制。上述半导体模块27相当于逆变器31。另外，由于对大功率进行处理的逆变器31的发热量大，所以为了冷却逆变器31而使用水冷系统35。上述冷却夹套28是水冷系统35的一部分。
下面，参照附图，说明本实施方式所涉及的半导体模块的制造方法。图6、8-11是表示本发明的实施方式1所涉及的半导体模块的制造工序的剖视图，图7是表示本发明的实施方式1所涉及的半导体模块的制造工序的俯视图。
首先，如图6及图7所示，准备出能够分离为上模、下模的碳制的铸模36。在铸模36的内部，形成有空腔部37，在空腔部37的底面形成有凹部38，在凹部38的底面形成有凹部39。在该铸模36的凹部38配置绝缘基板3，以横穿空腔部37的方式配置加固件20，用铸模36的上模和下模夹持加固件20的两端。在以此状态进行了加热的铸模36内注入Al等金属熔液并冷却而使其凝固，由此在空腔部37形成金属部19，在凹部39形成导电图案4、5。如上述所示，在金属部19和导电图案4、5的材质相同的情况下，能够一体地制造两者。另一方面，在两者的材质不同的情况下，对于绝缘基板3的上面以及下面，分工序而使用不同的铸模，流入各自的金属。
然后，如图8所示，将利用熔液接合进行了直接接合的基座板1和绝缘基板3从铸模36取出。然后，将从基座板1突出的加固件20的两端通过切断或者割断(break)等除去。利用钻头等在基座板1的四个角落形成孔17。如上所述，通过用铸模36对加固件20进行支撑，从而能够精密地控制基座板1内的加固件20的面方向以及厚度方向位置，因此能够抑制翘曲波动。此外，确认了在利用上述制造方法形成的基座板1与绝缘基板3之间的界面处没有裂缝、剥离。
然后，如图9所示，在绝缘基板3之上利用溅射形成导电图案4、5。在导电图案4、5之上利用非电解镀进行镀Ni(未图示)。在导电图案4的Ni镀层之上经由焊料6接合半导体芯片7、8，在导电图案5的Ni镀层之上经由焊料6接合半导体芯片9、10。
然后，如图10所示，利用Al导线11将半导体芯片7、8的上表面彼此连接，利用Al导线12将半导体芯片8的上表面和导电图案5连接，利用Al导线13将半导体芯片9、10的上表面彼此连接。
然后，如图11所示，将对绝缘基板3、导电图案4、5、半导体芯片7～10以及Al导线11～13进行包围的树脂质的壳体14利用粘接剂15粘接于基座板1的固定面。将该壳体14用作铸模而对树脂16进行灌封。壳体14直接成为半导体模块27的一部分。
如以上所说明，在本实施方式中，通过在基座板1的内部设置加固件20，从而大幅地减少由温度变化造成的基座板1的翘曲。因此，也能够减少用树脂16在基座板1之上进行了封装的半导体模块27整体的翘曲。其结果，对树脂16与壳体14之间的剥离等也进行抑制，因此能够提高P/C、H/C性等可靠性。并且，由于半导体模块27的翘曲少，所以不需要用强制地对翘曲进行限制这样大的力对螺钉29进行紧固，能够缓和对壳体14施加的应力。此外，确认了即使加固件20产生裂缝，基座板1的刚性、热特性也基本不变化。
另外，通过用树脂16将半导体芯片7～10和基座板1封装而固定，从而不需要以前在两者的固定中使用的螺钉、用于抑制模块的翘曲的板材、膏脂等间隔物，能够减少部件数量。另外，由于在半导体芯片7～10与基座板1之间不需要夹着膏脂，所以能够确保散热性。因此，能够有效地将由半导体芯片7～10的通电而发出的热进行散热，能够减小水冷系统35。
但是，如果基座板1和树脂16的线膨胀系数大幅不同，则半导体模块27整体产生翘曲。因此，作为树脂16，选择其线膨胀系数为金属部19的线膨胀系数与加固件20的线膨胀系数之间的数值的树脂。由此，具有金属部19和加固件20的基座板1整体的线膨胀系数接近树脂16的线膨胀系数。因此，在绝缘基板3的上下，线膨胀系数变得接近，因此能够进一步减少树脂封装后由温度变化造成的半导体模块27整体的翘曲。
另外，优选加固件20的材质与绝缘基板3的材质相同。由此，能够使包含彼此接合的基座板1和绝缘基板3在内的构造的翘曲减少。并且，如果加固件20的厚度与绝缘基板3的厚度相同，则能够进一步减少该构造的翘曲。
另外，通过使用廉价的Al导线作为配线部件，从而能够减少制造成本。并且，在对树脂16进行灌封时，使用壳体14作为铸模，直接将壳体14作为半导体模块27的一部分，由此能够减少铸模分离的工序。
另外，在基座板1的散热面设置有至少1个凸起构造2，因此基座板1的散热性能提高，半导体模块27的温度上升得到抑制。其结果，半导体模块27的寿命变长。
另外，通过将基座板1和绝缘基板3进行熔液接合，从而将两者牢固地接合，H/C、P/C的耐久性提高。但是，也可以利用焊料等接合材料将基座板1和绝缘基板3接合。在此情况下，接合材料作为基座板1与绝缘基板3之间的缓冲材料起作用，因此对绝缘基板3施加的应力得到缓和。
另外，也可以将半导体芯片7～10超声波接合在导电图案4之上。如上述所示，用Al钎焊进行无镀敷(plating-less)接合，从而使PC、HC的寿命提高。另外，也可以在加固件20设置至少一个开口。由此，能够减少加固件20的材料，提高基座板1的散热性。
实施方式2
图12是表示本发明的实施方式2所涉及的半导体模块的剖视图。在本实施方式中，作为配线部件，使用Cu框40、41。半导体芯片7、8的上表面分别经由焊料6与Cu框40连接。半导体芯片9、10的上表面分别经由焊料6与Cu框41连接。将Cu框40、41向壳体14的外部取出，作为电极起作用。另外，半导体芯片7、8经由Cu框40与导电图案5连接。
图13是表示本发明的实施方式2所涉及的半导体模块的内部的俯视图。金属框21a～21c相当于Cu框40，金属框21e相当于Cu框41。金属框21a与开关元件7a的上表面、二极管8a的上表面、导电图案5a连接，金属框21b与开关元件7b的上表面、二极管8b的上表面、导电图案5b连接，金属框21c与开关元件7c的上表面、二极管8c的上表面、导电图案5c连接。金属框21d与导电图案5a连接。金属框21e与二极管9a～9c的上表面、开关元件10a～10c的上表面连接。
如上述所示，使用Cu框40、41，从而能够使电流截面积增加，提高半导体模块27的电流容量。并且，配线构造与半导体芯片之间的接合强度提高，因此半导体模块27的H/C、P/C寿命提高。另外，Cu框40、41与Al导线相比传热面积大，因此通过电极实现的散热量增加。
实施方式3
图14是表示本发明的实施方式3所涉及的半导体模块的剖视图。在本实施方式中，由聚酰亚胺膜42对绝缘基板3、Cu框40、41以及导电图案4、5的至少一部分进行覆盖。通过该聚酰亚胺膜42，绝缘基板3、配线部件以及导电图案4、5与树脂16之间的密接性提高，因此半导体模块27的HC、PC寿命提高。
实施方式4
图15是表示本发明的实施方式4所涉及的半导体模块的剖视图。在本实施方式中，代替树脂16，使用对半导体芯片7～10以及配线部件的周边进行封装的第1树脂43、和对第1树脂43的外侧进行封装的第2树脂44。
第1树脂43的杨氏模量为大于或等于100MPa，具有比第2树脂44高的杨氏模量。如上述所示，用坚固的第1树脂43对半导体芯片7～10等进行封装，从而能够用少量的第1树脂43有效地提高半导体模块的P/C、H/C寿命。此外，第2树脂44也可以是凝胶。
此外，与上述相反，也可以使第1树脂43的杨氏模量比第2树脂44的杨氏模量低。在此情况下，通过将与基座板1接触的第1树脂43的线膨胀系数设为6～16ppm/℃而与基座板1的线膨胀系数为相同程度，从而能够减少由温度变化造成的翘曲量。此外，通过用杨氏模量高的第2树脂44覆盖该第1树脂43，从而能够提高半导体模块27整体的刚性，抑制由来自外部的力造成的变形。
实施方式5
图16是表示本发明的实施方式5所涉及的半导体模块的剖视图。在本实施方式中，树脂16是模塑树脂，不存在壳体14等。其他结构与实施方式2相同。在如上述所示使用了模塑树脂的情况下也能够得到相同的效果。此外，也可以与实施方式1同样，使用Al导线作为配线部件，还可以组合实施方式3、4的结构。
在上述实施方式1～5中，开关元件7a～7c、10a～10c不限于IGBT，也可以是MOSFET。另外，半导体芯片7～10不限于是由硅形成的，也可以是由带隙比硅大的宽带隙半导体形成的。宽带隙半导体例如是碳化硅、氮化镓类材料、或者金刚石。由这样的宽带隙半导体形成的半导体芯片7～10的耐电压性、容许电流密度高，因此能够小型化。通过使用该小型化的半导体芯片，组装有该半导体芯片的半导体模块27也能够小型化。另外，元件的耐热性高，因此能够将散热片的凸起构造2小型化，能够将水冷系统35风冷化，因而能够进一步使半导体模块27小型化。另外，半导体芯片7～10的功率损耗低、效率高，因此能够使半导体模块27高效化。此外，虽然优选将开关元件和二极管双方由宽带隙半导体形成，但也可以将某一方的元件由宽带隙半导体形成。
标号的说明
1基座板，2凸起构造，3绝缘基板，4导电图案，5导电图案，7～10半导体芯片，12Al导线(配线部件，金属导线)，14壳体，16树脂，19金属部，20加固件，27半导体模块，28冷却夹套，32电池，33电动机，40Cu框(配线部件，金属框)，42聚酰亚胺膜(覆膜)，43第1树脂，44第2树脂。

Claims (15)

1.一种半导体模块，其特征在于，具备：
基座板，其具有固定面和散热面，该散热面是与所述固定面相反的面；
绝缘基板，其与所述基座板的所述固定面接合；
第1及第2导电图案，它们设置在所述绝缘基板之上；
半导体芯片，其设置在所述第1导电图案之上；
配线部件，其将所述半导体芯片和所述第2导电图案连接；以及
树脂，其对所述基座板的所述固定面、所述绝缘基板、所述第1及第2导电图案、所述半导体芯片以及所述配线部件进行封装，
所述基座板具有金属部和加固件，该加固件设置在所述金属部内并具有比所述金属部高的杨氏模量，
所述加固件的材质与所述绝缘基板的材质相同，
所述加固件的厚度与所述绝缘基板的厚度相同，
所述基座板与从所述散热面突出的至少1个凸起构造一体成型，所述加固件在所述基座板的剖面中相比于中心配置于所述凸起构造侧。
2.根据权利要求1所述的半导体模块，其特征在于，
所述树脂的线膨胀系数是所述金属部的线膨胀系数与所述加固件的线膨胀系数之间的数值。
3.根据权利要求2所述的半导体模块，其特征在于，
所述树脂的线膨胀系数是8～16ppm/℃，
所述基座板的线膨胀系数是10～20ppm/℃。
4.根据权利要求1至3中任一项所述的半导体模块，其特征在于，
所述配线部件是金属导线。
5.根据权利要求1至3中任一项所述的半导体模块，其特征在于，
所述配线部件是金属框。
6.根据权利要求1至3中任一项所述的半导体模块，其特征在于，
所述树脂具有对所述半导体芯片以及所述配线部件的周边进行封装的第1树脂、和对所述第1树脂的外侧进行封装的第2树脂，
所述第1树脂具有比所述第2树脂高的杨氏模量。
7.根据权利要求1至3中任一项所述的半导体模块，其特征在于，还具备：
壳体，其与所述基座板的所述固定面粘接，对所述绝缘基板、所述第1及第2导电图案、所述半导体芯片以及所述配线部件进行包围，
所述树脂是将所述壳体作为铸模使用而灌封的树脂。
8.根据权利要求1至3中任一项所述的半导体模块，其特征在于，
所述树脂是模塑树脂。
9.根据权利要求1至3中任一项所述的半导体模块，其特征在于，
所述基座板与所述绝缘基板进行了熔液接合。
10.根据权利要求1至3中任一项所述的半导体模块，其特征在于，
所述基座板与所述绝缘基板利用接合材料进行了接合。
11.根据权利要求1至3中任一项所述的半导体模块，其特征在于，
所述半导体芯片超声波接合在所述第1导电图案之上。
12.根据权利要求1至3中任一项所述的半导体模块，其特征在于，
在所述加固件设置有至少一个开口。
13.根据权利要求1所述的半导体模块，其特征在于，还具备：
覆膜，其对所述绝缘基板、所述配线部件以及所述第1及第2导电图案的至少一部分进行覆盖而提高与所述树脂的密接性。
14.一种半导体装置，其特征在于，具备：
权利要求1所述的半导体模块；以及
冷却夹套，其安装于所述半导体模块的所述基座板的所述散热面侧，用于对所述半导体模块进行冷却。
15.一种汽车，其特征在于，具备：
权利要求1所述的半导体模块；
电池；以及
电动机，
所述半导体模块将所述电池的直流电流变换为交流电流而供给至所述电动机。
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