JP6705393B2 - 半導体装置及び電力変換装置 - Google Patents
半導体装置及び電力変換装置 Download PDFInfo
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- JP6705393B2 JP6705393B2 JP2017018753A JP2017018753A JP6705393B2 JP 6705393 B2 JP6705393 B2 JP 6705393B2 JP 2017018753 A JP2017018753 A JP 2017018753A JP 2017018753 A JP2017018753 A JP 2017018753A JP 6705393 B2 JP6705393 B2 JP 6705393B2
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Description
図1は、本発明の実施の形態1に係る半導体装置を示す断面図である。ベース板1は、金属ベース板2と、金属ベース板2の上に設けられた樹脂絶縁膜3とを有する樹脂絶縁金属基板である。回路パターン4がベース板1の上面に設けられている。
図2は、本発明の実施の形態2に係る半導体装置を示す断面図である。主電極端子9もベース板1の樹脂絶縁膜3に直接的に固定されている。このように全端子がベース板1の樹脂絶縁膜3に直接的に固定されていれば更なる低背化が可能となる。
図3は、本発明の実施の形態3に係る半導体装置を示す平面図である。ベース板1の上面において中継端子12を回路パターン4よりもベース板1の内側に配置している。図4は、本発明の実施の形態3に係る半導体装置を示す回路図である。図中の矢印が主配線ワイヤ7に対応する。
図6は、本発明の実施の形態4に係る半導体装置を示す平面図である。図7は、本発明の実施の形態4に係る複数の中継端子と制御基板の接続部を拡大した平面図である。複数の中継端子12が、ベース板1の上面においてジグザグに配置されている。複数の中継端子12の先端が制御基板11の複数のスルーホール13をそれぞれ貫通して制御基板11に接続されている。
本実施の形態は、上述した実施の形態1〜4にかかる半導体装置を電力変換装置に適用したものである。電力変換装置は、例えば、インバータ装置、コンバータ装置、サーボアンプ、電源ユニットなどである。本発明は特定の電力変換装置に限定されるものではないが、以下、三相のインバータに本発明を適用した場合について説明する。
Claims (5)
- 金属ベース板と、前記金属ベース板の上に設けられた絶縁膜とを有するベース板と、
前記ベース板の上に設けられた半導体チップと、
前記半導体チップの上方に配置された制御基板と、
前記半導体チップの信号電極に信号配線ワイヤにより接続され、前記制御基板まで延びて前記制御基板に接続された中継端子とを備え、
前記中継端子は前記ベース板の前記絶縁膜に直接的に固定され、
複数の前記中継端子が、前記ベース板の上面においてジグザグに配置されていることを特徴とする半導体装置。 - 前記半導体チップの主電極に主配線ワイヤにより接続され、前記ベース板の前記絶縁膜に直接的に固定された主電極端子を更に備えることを特徴とする請求項1に記載の半導体装置。
- 前記ベース板の上面に設けられた回路パターンと、
前記半導体チップの主電極と前記回路パターンを接続する主配線ワイヤとを備え、
前記中継端子は、前記ベース板の上面において前記回路パターンよりも前記ベース板の内側に配置されていることを特徴とする請求項1又は2に記載の半導体装置。 - 前記半導体チップはワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
- 請求項1〜4の何れか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路とを備えることを特徴とする電力変換装置。
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