CN105474354B - 半导体基板的制造方法 - Google Patents

半导体基板的制造方法 Download PDF

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Publication number
CN105474354B
CN105474354B CN201480038163.7A CN201480038163A CN105474354B CN 105474354 B CN105474354 B CN 105474354B CN 201480038163 A CN201480038163 A CN 201480038163A CN 105474354 B CN105474354 B CN 105474354B
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China
Prior art keywords
layer
amorphous layer
amorphous
substrate
single crystal
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CN201480038163.7A
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English (en)
Chinese (zh)
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CN105474354A (zh
Inventor
今冈功
小林元树
内田英次
八木邦明
河原孝光
八田直记
南章行
坂田丰和
牧野友厚
高木秀树
仓岛优
仓岛优一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Toyota Industries Corp
National Institute of Advanced Industrial Science and Technology AIST
Sicoxs Corp
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Publication of CN105474354A publication Critical patent/CN105474354A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/126—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates characterised by the composition of the bonding layer, e.g. dopant concentration or stoichiometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Recrystallisation Techniques (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
CN201480038163.7A 2013-07-05 2014-07-03 半导体基板的制造方法 Active CN105474354B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-142151 2013-07-05
JP2013142151A JP6061251B2 (ja) 2013-07-05 2013-07-05 半導体基板の製造方法
PCT/JP2014/067777 WO2015002266A1 (ja) 2013-07-05 2014-07-03 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
CN105474354A CN105474354A (zh) 2016-04-06
CN105474354B true CN105474354B (zh) 2018-04-17

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US (1) US9761479B2 (enExample)
EP (1) EP3018696B8 (enExample)
JP (1) JP6061251B2 (enExample)
KR (1) KR101846299B1 (enExample)
CN (1) CN105474354B (enExample)
WO (1) WO2015002266A1 (enExample)

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JP2016139655A (ja) * 2015-01-26 2016-08-04 富士通株式会社 半導体装置及び半導体装置の製造方法
WO2016140229A1 (ja) * 2015-03-04 2016-09-09 有限会社Ｍｔｅｃ 半導体基板の製造方法及び半導体基板
JP6572694B2 (ja) 2015-09-11 2019-09-11 信越化学工業株式会社 ＳｉＣ複合基板の製造方法及び半導体基板の製造方法
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JP6582779B2 (ja) 2015-09-15 2019-10-02 信越化学工業株式会社 ＳｉＣ複合基板の製造方法
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CN107958839B (zh) * 2016-10-18 2020-09-29 上海新昇半导体科技有限公司 晶圆键合方法及其键合装置
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JP2019210161A (ja) * 2018-05-31 2019-12-12 ローム株式会社 半導体基板構造体及びパワー半導体装置
JP7024668B2 (ja) * 2018-09-05 2022-02-24 株式会社Sumco Ｓｏｉウェーハ及びその製造方法
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CN109986191A (zh) * 2019-04-15 2019-07-09 上海交通大学 一种应用于金属/高分子连接的表面处理方法
JP6737378B2 (ja) * 2019-05-09 2020-08-05 信越化学工業株式会社 ＳｉＣ複合基板
JP6955302B2 (ja) * 2019-06-18 2021-10-27 大学共同利用機関法人自然科学研究機構 光学素子の製造方法及び光学素子
KR20230004728A (ko) 2020-06-01 2023-01-06 미쓰비시덴키 가부시키가이샤 복합 기판, 복합 기판의 제조 방법, 반도체 장치 및 반도체 장치의 제조 방법
JP7625248B2 (ja) * 2021-01-20 2025-02-03 国立研究開発法人理化学研究所 接合体の製造方法および接合体
JP2023061509A (ja) 2021-10-20 2023-05-02 株式会社サイコックス 多結晶炭化珪素基板の製造方法
JP2023068782A (ja) * 2021-11-04 2023-05-18 株式会社サイコックス 半導体基板とその製造方法
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JP2023178892A (ja) * 2022-06-06 2023-12-18 株式会社サイコックス 陰極、高速原子ビーム線源、接合基板の製造方法、および、陰極の再生方法
JP2024025064A (ja) 2022-08-10 2024-02-26 株式会社サイコックス ＳｉＣ単結晶転写用複合基板、ＳｉＣ単結晶転写用複合基板の製造方法、およびＳｉＣ接合基板の製造方法
JP2024073797A (ja) 2022-11-18 2024-05-30 株式会社サイコックス 研磨組成物
FR3146237A1 (fr) 2023-02-24 2024-08-30 Mersen France Gennevilliers Plaque en SiC polycristallin dopé à planéité et conductivité électrique améliorées, et procédé de fabrication d’une telle plaque
JP2024121436A (ja) 2023-02-27 2024-09-06 住友金属鉱山株式会社 ＳｉＣ半導体装置用基板、ＳｉＣ接合基板、ＳｉＣ多結晶基板およびＳｉＣ多結晶基板の製造方法
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Also Published As

Publication number Publication date
EP3018696A4 (en) 2017-03-15
JP2015015401A (ja) 2015-01-22
US20160204023A1 (en) 2016-07-14
KR101846299B1 (ko) 2018-05-18
EP3018696B1 (en) 2021-11-17
KR20160040565A (ko) 2016-04-14
JP6061251B2 (ja) 2017-01-18
WO2015002266A1 (ja) 2015-01-08
EP3018696A1 (en) 2016-05-11
US9761479B2 (en) 2017-09-12
CN105474354A (zh) 2016-04-06
EP3018696B8 (en) 2022-02-23

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