CN105449086B - 发光二极管 - Google Patents

发光二极管 Download PDF

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Publication number
CN105449086B
CN105449086B CN201510957553.0A CN201510957553A CN105449086B CN 105449086 B CN105449086 B CN 105449086B CN 201510957553 A CN201510957553 A CN 201510957553A CN 105449086 B CN105449086 B CN 105449086B
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CN
China
Prior art keywords
light emitting
electrode pad
layer
emitting diode
area
Prior art date
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Active
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CN201510957553.0A
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English (en)
Chinese (zh)
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CN105449086A (zh
Inventor
金钟奎
李晓罗
石昊埈
慎镇哲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100070840A external-priority patent/KR101158080B1/ko
Priority claimed from KR1020100106172A external-priority patent/KR101272708B1/ko
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of CN105449086A publication Critical patent/CN105449086A/zh
Application granted granted Critical
Publication of CN105449086B publication Critical patent/CN105449086B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
CN201510957553.0A 2010-07-22 2011-07-21 发光二极管 Active CN105449086B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020100070840A KR101158080B1 (ko) 2010-07-22 2010-07-22 발광다이오드
KR10-2010-0070840 2010-07-22
KR10-2010-0106172 2010-10-28
KR1020100106172A KR101272708B1 (ko) 2010-10-28 2010-10-28 개선된 발광 효율을 갖는 발광다이오드 및 제조방법
CN201180035911.2A CN103026516B (zh) 2010-07-22 2011-07-21 发光二极管

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201180035911.2A Division CN103026516B (zh) 2010-07-22 2011-07-21 发光二极管

Publications (2)

Publication Number Publication Date
CN105449086A CN105449086A (zh) 2016-03-30
CN105449086B true CN105449086B (zh) 2018-03-27

Family

ID=45497303

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201510957553.0A Active CN105449086B (zh) 2010-07-22 2011-07-21 发光二极管
CN201510958319.XA Active CN105529343B (zh) 2010-07-22 2011-07-21 发光二极管
CN201180035911.2A Active CN103026516B (zh) 2010-07-22 2011-07-21 发光二极管

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201510958319.XA Active CN105529343B (zh) 2010-07-22 2011-07-21 发光二极管
CN201180035911.2A Active CN103026516B (zh) 2010-07-22 2011-07-21 发光二极管

Country Status (5)

Country Link
US (2) US8629471B2 (https=)
JP (2) JP2012028749A (https=)
CN (3) CN105449086B (https=)
TW (1) TWI535076B (https=)
WO (1) WO2012011749A2 (https=)

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KR101871372B1 (ko) * 2011-10-28 2018-08-02 엘지이노텍 주식회사 발광 소자
KR101888604B1 (ko) * 2011-10-28 2018-08-14 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
CN102593284B (zh) * 2012-03-05 2014-06-18 映瑞光电科技(上海)有限公司 隔离深沟槽及其高压led芯片的制造方法
TWI572068B (zh) 2012-12-07 2017-02-21 晶元光電股份有限公司 發光元件
KR102087933B1 (ko) * 2012-11-05 2020-04-14 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 어레이
KR20140059985A (ko) * 2012-11-09 2014-05-19 엘지이노텍 주식회사 발광소자
CN104813489B (zh) * 2012-11-23 2018-01-02 首尔伟傲世有限公司 发光二极管及其制造方法
KR20140073351A (ko) * 2012-12-06 2014-06-16 엘지이노텍 주식회사 발광 소자
US9356212B2 (en) 2012-12-21 2016-05-31 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
WO2014098510A1 (en) 2012-12-21 2014-06-26 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
KR102087935B1 (ko) * 2012-12-27 2020-03-11 엘지이노텍 주식회사 발광 소자
KR101992366B1 (ko) 2012-12-27 2019-06-24 엘지이노텍 주식회사 발광 소자
CN103915463B (zh) * 2013-01-09 2016-12-28 新世纪光电股份有限公司 发光装置
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US9780276B2 (en) * 2014-01-23 2017-10-03 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences Wafer-level semiconductor device and manufacturing method thereof
TWI614920B (zh) 2014-05-19 2018-02-11 晶元光電股份有限公司 光電元件及其製造方法
CN113035851B (zh) * 2014-06-18 2022-03-29 艾克斯展示公司技术有限公司 微组装led显示器
KR102231646B1 (ko) * 2014-10-17 2021-03-24 엘지이노텍 주식회사 발광 소자
KR101888608B1 (ko) 2014-10-17 2018-09-20 엘지이노텍 주식회사 발광 소자 패키지 및 조명 장치
CN110061027B (zh) * 2015-02-13 2024-01-19 首尔伟傲世有限公司 发光元件
TWD175295S (zh) * 2015-02-16 2016-05-01 晶元光電股份有限公司 發光二極體陣列之部分
US9905729B2 (en) * 2015-03-27 2018-02-27 Seoul Viosys Co., Ltd. Light emitting diode
JP6428467B2 (ja) * 2015-04-24 2018-11-28 日亜化学工業株式会社 発光素子
JP6176298B2 (ja) 2015-09-03 2017-08-09 富士ゼロックス株式会社 面発光型半導体レーザアレイ及び面発光型半導体レーザアレイの製造方法
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
CN108183157B (zh) * 2017-11-30 2019-11-12 华灿光电（浙江）有限公司 一种发光二极管及制备方法
JP2019149480A (ja) * 2018-02-27 2019-09-05 豊田合成株式会社 半導体素子、発光装置、および発光装置の製造方法
CN108987425B (zh) * 2018-07-19 2020-09-18 豪威半导体（上海）有限责任公司 微led显示器及其制造方法
EP3836234A4 (en) * 2018-08-10 2022-05-04 Lin, Hong-Cheng DIODE DEVICE, DISPLAY PANEL AND FLEXIBLE DISPLAY
CN109765472A (zh) * 2018-12-29 2019-05-17 江西兆驰半导体有限公司 一种非直接电接触式的发光二极管器件的电致发光量测方法
CN109768126B (zh) * 2019-01-07 2020-05-19 华灿光电（浙江）有限公司 一种发光二极管外延片的制造方法
MX2021013719A (es) 2019-05-14 2021-12-10 Seoul Viosys Co Ltd Paquete de chip led y metodo de manufactura del mismo.
US12199215B2 (en) 2019-08-21 2025-01-14 Industrial Technology Research Institute Light-emitting device and display apparatus
US20210057611A1 (en) * 2019-08-21 2021-02-25 Industrial Technology Research Institute Light-emitting device and display apparatus
US11811005B2 (en) * 2020-04-21 2023-11-07 Jade Bird Display (shanghai) Limited Light-emitting diode chip structures with reflective elements
TWI893104B (zh) * 2020-04-21 2025-08-11 中國大陸商上海顯耀顯示科技有限公司 具反射元件之發光二極體晶片結構
KR20220014388A (ko) * 2020-07-24 2022-02-07 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
JP7339559B2 (ja) * 2021-05-20 2023-09-06 日亜化学工業株式会社 発光素子
WO2023279259A1 (zh) * 2021-07-06 2023-01-12 泉州三安半导体科技有限公司 一种高压发光二极管
KR102895315B1 (ko) * 2021-12-23 2025-12-04 삼성디스플레이 주식회사 표시 장치
CN115966642B (zh) * 2022-12-29 2024-03-12 淮安澳洋顺昌光电技术有限公司 一种高压发光二极管芯片
DE102023135556A1 (de) * 2023-12-18 2025-06-18 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement und vorrichtung zur reinigung eines fluids

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Also Published As

Publication number Publication date
CN105529343B (zh) 2018-10-19
TWI535076B (zh) 2016-05-21
JP6081536B2 (ja) 2017-02-15
US8629471B2 (en) 2014-01-14
CN103026516B (zh) 2016-07-06
TW201214806A (en) 2012-04-01
CN103026516A (zh) 2013-04-03
US9202973B2 (en) 2015-12-01
WO2012011749A3 (en) 2012-04-26
CN105449086A (zh) 2016-03-30
US20120187424A1 (en) 2012-07-26
WO2012011749A2 (en) 2012-01-26
CN105529343A (zh) 2016-04-27
JP2015222826A (ja) 2015-12-10
JP2012028749A (ja) 2012-02-09
US20140091338A1 (en) 2014-04-03

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