EP3836234A4 - Diode device, display panel, and flexible display - Google Patents

Diode device, display panel, and flexible display Download PDF

Info

Publication number
EP3836234A4
EP3836234A4 EP19846917.3A EP19846917A EP3836234A4 EP 3836234 A4 EP3836234 A4 EP 3836234A4 EP 19846917 A EP19846917 A EP 19846917A EP 3836234 A4 EP3836234 A4 EP 3836234A4
Authority
EP
European Patent Office
Prior art keywords
diode device
display
display panel
flexible display
flexible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19846917.3A
Other languages
German (de)
French (fr)
Other versions
EP3836234A1 (en
Inventor
Hung-Kuang Hsu
Hong-cheng LIN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Visionlabs Corp
Original Assignee
Lin Hong Cheng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lin Hong Cheng filed Critical Lin Hong Cheng
Publication of EP3836234A1 publication Critical patent/EP3836234A1/en
Publication of EP3836234A4 publication Critical patent/EP3836234A4/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0095Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0093Wafer bonding; Removal of the growth substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials
EP19846917.3A 2018-08-10 2019-05-27 Diode device, display panel, and flexible display Pending EP3836234A4 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862716995P 2018-08-10 2018-08-10
US201862773202P 2018-11-30 2018-11-30
US201962824313P 2019-03-27 2019-03-27
PCT/CN2019/088648 WO2020029657A1 (en) 2018-08-10 2019-05-27 Diode device, display panel, and flexible display

Publications (2)

Publication Number Publication Date
EP3836234A1 EP3836234A1 (en) 2021-06-16
EP3836234A4 true EP3836234A4 (en) 2022-05-04

Family

ID=69413671

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19846917.3A Pending EP3836234A4 (en) 2018-08-10 2019-05-27 Diode device, display panel, and flexible display

Country Status (6)

Country Link
US (3) US11296254B2 (en)
EP (1) EP3836234A4 (en)
JP (2) JP7398818B2 (en)
CN (2) CN112005387A (en)
TW (1) TW202044610A (en)
WO (1) WO2020029657A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3836234A4 (en) * 2018-08-10 2022-05-04 Lin, Hong-Cheng Diode device, display panel, and flexible display
US11322646B2 (en) * 2019-01-18 2022-05-03 Innolux Corporation Light-emitting diode package and electronic device
CN110350063B (en) * 2019-07-22 2020-08-11 京东方科技集团股份有限公司 Light emitting diode, display substrate and transfer method
US10989735B2 (en) * 2019-08-21 2021-04-27 Facebook Technologies, Llc Atomic force microscopy tips for interconnection
CN211125682U (en) * 2019-12-23 2020-07-28 厦门三安光电有限公司 Upright LED chip
CN113380932A (en) * 2020-03-10 2021-09-10 隆达电子股份有限公司 Flip-chip light emitting diode structure and manufacturing method thereof
KR20220032917A (en) 2020-09-08 2022-03-15 삼성전자주식회사 Micro light emitting device and display apparatus having the same
TW202213311A (en) * 2020-09-18 2022-04-01 許華珍 A display device
EP4012755A1 (en) * 2020-12-11 2022-06-15 Samsung Electronics Co., Ltd. Micro-semiconductor chip wetting align apparatus
KR20220085931A (en) * 2020-12-15 2022-06-23 삼성디스플레이 주식회사 Light emitting diode and display device including the same
TWI762172B (en) * 2021-01-29 2022-04-21 台灣愛司帝科技股份有限公司 Light-emitting module and method of manufacturing the same
CN115336015A (en) * 2021-03-11 2022-11-11 京东方科技集团股份有限公司 Display substrate and display device
CN113471341A (en) * 2021-05-26 2021-10-01 厦门大学 Micro-LED structure based on red light AlInGaAs quantum dots and preparation method thereof
TWI779672B (en) * 2021-06-17 2022-10-01 錼創顯示科技股份有限公司 Micro light-emitting device
CN113725340A (en) * 2021-08-31 2021-11-30 錼创显示科技股份有限公司 Miniature light emitting diode display device
TWI790827B (en) * 2021-11-22 2023-01-21 錼創顯示科技股份有限公司 Micro light-emitting diode display device
JP7450158B2 (en) * 2021-12-23 2024-03-15 日亜化学工業株式会社 Manufacturing method of light emitting device
CN114388670A (en) * 2021-12-27 2022-04-22 泉州三安半导体科技有限公司 Invisible light emitting diode
WO2023142152A1 (en) * 2022-01-31 2023-08-03 Jade Bird Display (Shanghai) Company Micro led structure and micro display panel
CN114597229B (en) * 2022-03-22 2023-06-27 业成科技(成都)有限公司 Touch-control type miniature light-emitting diode display and manufacturing method thereof
JP7465612B2 (en) 2022-03-24 2024-04-11 アルディーテック株式会社 Semiconductor light emitting element chip integrated device and its manufacturing method
TWI826022B (en) * 2022-09-29 2023-12-11 錼創顯示科技股份有限公司 Micro light-emitting element and micro light-emitting element display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150349205A1 (en) * 2014-05-30 2015-12-03 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
EP3093834A1 (en) * 2015-04-24 2016-11-16 LG Electronics Inc. Display device using semiconductor light emitting device and manufacturing method thereof
US20180097145A1 (en) * 2015-01-06 2018-04-05 Apple Inc. Led structures for reduced non-radiative sidewall recombination

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124184A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor light emitting device
JPS59124184U (en) 1983-02-12 1984-08-21 池本 允 A device to remove dirt from the tip of the ballpoint pen and the surrounding area.
US5545291A (en) * 1993-12-17 1996-08-13 The Regents Of The University Of California Method for fabricating self-assembling microstructures
US6410942B1 (en) 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
JP2001257218A (en) * 2000-03-10 2001-09-21 Sony Corp Method for mounting fine chip
JP2005026688A (en) * 2003-06-30 2005-01-27 Osram Opto Semiconductors Gmbh Radiation emission semiconductor chip, manufacturing method therefor, and method for adjusting and setting brightness thereof
JP2006113258A (en) * 2004-10-14 2006-04-27 Sony Corp Apparatus and method for mounting component
JP2010517274A (en) * 2007-01-22 2010-05-20 クリー レッド ライティング ソリューションズ、インコーポレイテッド Illumination device using array of light-emitting elements interconnected externally and method of manufacturing the same
US7768483B2 (en) * 2007-07-02 2010-08-03 Tpo Displays Corp. Pixels and display panels
JP2009283912A (en) * 2008-04-25 2009-12-03 Sanyo Electric Co Ltd Nitride-based semiconductor device and method of manufacturing the same
JP2010109331A (en) * 2008-09-30 2010-05-13 Sanyo Electric Co Ltd Semiconductor laser device, and display
US8008683B2 (en) * 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
US8587017B2 (en) 2009-07-05 2013-11-19 Industrial Technology Research Institute Light emitting device and method of fabricating a light emitting device
KR101134731B1 (en) * 2009-10-22 2012-04-13 엘지이노텍 주식회사 Light emitting device and method for fabricating the same
JP2012028749A (en) 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd Light-emitting diode
CN202196806U (en) * 2011-08-10 2012-04-18 安徽三安光电有限公司 Light-emitting diode (LED) chip with current barrier layer
US9245875B2 (en) * 2012-04-20 2016-01-26 Rensselaer Polytechnic Institute Light emitting diodes and a method of packaging the same
US20140367693A1 (en) * 2013-06-14 2014-12-18 Epistar Corporation Light-emitting device and the manufacturing method thereof
US9231153B2 (en) 2014-05-30 2016-01-05 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
CN103972350B (en) * 2014-05-30 2017-01-18 马鞍山太时芯光科技有限公司 LED (light-emitting diode) chip with novel structure and production method thereof
US9590137B2 (en) 2014-05-30 2017-03-07 Mikro Mesa Technology Co., Ltd. Light-emitting diode
US9607907B2 (en) 2014-12-01 2017-03-28 Industrial Technology Research Institute Electric-programmable magnetic module and picking-up and placement process for electronic devices
US9773711B2 (en) 2014-12-01 2017-09-26 Industrial Technology Research Institute Picking-up and placing process for electronic devices and electronic module
TWI549316B (en) * 2014-12-02 2016-09-11 The method of transferring light emitting wafers
CN105552190B (en) * 2015-04-30 2018-10-09 美科米尚技术有限公司 It is micro-led
US10297719B2 (en) 2015-08-27 2019-05-21 Mikro Mesa Technology Co., Ltd. Micro-light emitting diode (micro-LED) device
CN108475712B (en) * 2015-12-01 2021-11-09 夏普株式会社 Image forming element
US10418519B2 (en) * 2015-12-22 2019-09-17 Apple Inc. LED sidewall processing to mitigate non-radiative recombination
US10199542B2 (en) * 2015-12-22 2019-02-05 Epistar Corporation Light-emitting device
US9705035B1 (en) * 2015-12-30 2017-07-11 Epistar Corporation Light emitting device
US10917953B2 (en) 2016-03-21 2021-02-09 X Display Company Technology Limited Electrically parallel fused LEDs
US10223962B2 (en) 2016-03-21 2019-03-05 X-Celeprint Limited Display with fused LEDs
DE102017205639A1 (en) * 2016-04-18 2017-10-19 Seoul Viosys Co., Ltd Light-emitting diode with high efficiency
US20190168222A1 (en) 2016-08-23 2019-06-06 Sony Corporation Single-particle capturing apparatus, single-particle capturing system, and single-particle capturing method
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
KR20180081371A (en) * 2017-01-06 2018-07-16 서울바이오시스 주식회사 Light emitting device having currnt blocking layer
CN108110099B (en) * 2017-04-01 2019-03-12 厦门乾照光电股份有限公司 A kind of LED chip and preparation method thereof
US10707374B2 (en) 2017-09-15 2020-07-07 Glo Ab Etendue enhancement for light emitting diode subpixels
US10693042B2 (en) 2017-11-23 2020-06-23 Lg Display Co., Ltd. Light-emitting device and display device using the same
US20190237940A1 (en) * 2018-01-26 2019-08-01 Lumentum Operations Llc Modified emitter array
US11011677B2 (en) * 2018-03-09 2021-05-18 Innolux Corporation Display device
US10622519B2 (en) * 2018-03-30 2020-04-14 Facebook Technologies, Llc Reduction of surface recombination losses in micro-LEDs
CN108766972B (en) * 2018-05-11 2021-10-22 京东方科技集团股份有限公司 Thin film transistor, manufacturing method thereof and display substrate
US11393955B2 (en) * 2018-08-03 2022-07-19 Genesis Photonics Inc. Light emitting diode and manufacturing method thereof
EP3836234A4 (en) * 2018-08-10 2022-05-04 Lin, Hong-Cheng Diode device, display panel, and flexible display
KR102613051B1 (en) 2018-09-05 2023-12-12 삼성전자주식회사 High resolution display device
KR20200062863A (en) 2018-11-27 2020-06-04 삼성전자주식회사 Display apparatus and method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150349205A1 (en) * 2014-05-30 2015-12-03 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
US20180097145A1 (en) * 2015-01-06 2018-04-05 Apple Inc. Led structures for reduced non-radiative sidewall recombination
EP3093834A1 (en) * 2015-04-24 2016-11-16 LG Electronics Inc. Display device using semiconductor light emitting device and manufacturing method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020029657A1 *

Also Published As

Publication number Publication date
WO2020029657A1 (en) 2020-02-13
US20220223755A1 (en) 2022-07-14
US11881540B2 (en) 2024-01-23
CN112005387A (en) 2020-11-27
US20240047609A1 (en) 2024-02-08
US20210057607A1 (en) 2021-02-25
JP7398818B2 (en) 2023-12-15
JP2021534594A (en) 2021-12-09
TW202044610A (en) 2020-12-01
EP3836234A1 (en) 2021-06-16
CN115775852A (en) 2023-03-10
US11296254B2 (en) 2022-04-05
JP2024026189A (en) 2024-02-28

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Owner name: VISIONLABS CORPORATION