CN114597229B - Touch-control type miniature light-emitting diode display and manufacturing method thereof - Google Patents
Touch-control type miniature light-emitting diode display and manufacturing method thereof Download PDFInfo
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- CN114597229B CN114597229B CN202210283402.1A CN202210283402A CN114597229B CN 114597229 B CN114597229 B CN 114597229B CN 202210283402 A CN202210283402 A CN 202210283402A CN 114597229 B CN114597229 B CN 114597229B
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 238000001465 metallisation Methods 0.000 claims abstract description 26
- 238000003475 lamination Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 24
- 238000000059 patterning Methods 0.000 claims description 9
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 59
- 239000010949 copper Substances 0.000 description 12
- 238000002161 passivation Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
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- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Human Computer Interaction (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
The invention provides a touch micro light emitting diode display, comprising: a semiconductor lamination layer, the upper surface of which is provided with a plurality of under-bump metallization layers and at least one first sensing pattern, the under-bump metallization layers and the at least one first sensing pattern have the same material and thickness, and the under-bump metallization layers extend downwards into the semiconductor lamination layer to be respectively and electrically connected with a plurality of corresponding conductive structures below; a plurality of first conductive bumps electrically connected to the corresponding under bump metallization layers respectively; at least one bonding pad disposed on the at least one first sensing pattern and partially overlapping the at least one first sensing pattern, the at least one bonding pad and the first conductive bumps having the same material and thickness; a plurality of second conductive bumps electrically connected to the corresponding first conductive bumps below; and a plurality of micro light emitting diodes disposed on the second conductive bumps.
Description
Technical Field
The present invention relates to a display and a manufacturing method thereof, and more particularly to a touch micro light emitting diode (micro LED) display and a manufacturing method thereof.
Background
Generally, the micro light emitting diode (micro LED) display 1 of fig. 1 mainly comprises a semiconductor substrate 10, a plurality of aluminum connection pads 20, a first protection layer 30, a second protection layer 40, at least one redistribution layer (Redistribution Layer, RDL) 50, at least one under bump metallization layer 60, and at least one copper bump 70.
However, the micro light emitting diode (micro LED) display 1 has no touch function.
Therefore, how to provide a touch sensing circuit for micro light emitting diode display is an important issue for the industry.
Disclosure of Invention
In view of the foregoing, one aspect of the present disclosure provides a touch-control micro light emitting diode display, comprising: a semiconductor lamination layer, the upper surface of which is provided with a plurality of under bump metallization layers (UBM) and at least one first sensing pattern, the under bump metallization layers and the at least one first sensing pattern have the same material and thickness, and the under bump metallization layers extend downwards to the inside of the semiconductor lamination layer and are respectively and electrically connected with a plurality of corresponding conductive structures below; a plurality of first conductive bumps electrically connected to the corresponding under bump metallization layers respectively; at least one bond pad (bond pad) disposed on the at least one first sensing pattern and partially overlapping the at least one first sensing pattern, the at least one bond pad and the first conductive bumps having the same material and thickness; a plurality of second conductive bumps electrically connected to the corresponding first conductive bumps below; and a plurality of micro light emitting diodes (micro LEDs) disposed on the second conductive bumps.
According to one or more embodiments of the present disclosure, further comprising: the at least one micro structure and the at least one second sensing pattern are arranged on the upper surface of the semiconductor lamination, and the at least one second sensing pattern is positioned on the at least one micro structure, wherein the thickness of the at least one second sensing pattern is larger than that of the at least one micro structure, and the height of the at least one second sensing pattern is larger than or equal to that of the micro light emitting diodes.
In accordance with one or more embodiments of the present disclosure, the conductive structures are redistribution layers (Redistribution Layer, RDL).
In accordance with one or more embodiments of the present disclosure, a thickness ratio of the first conductive bumps to the at least one first sensing pattern is greater than or equal to 5.
In accordance with one or more embodiments of the present disclosure, the at least one first sensing pattern and the at least one second sensing pattern are a transmitting electrode (Tx) or a receiving electrode (Rx) with each other.
In accordance with one or more embodiments of the present disclosure, the thicknesses and materials of the first conductive bumps and the second conductive bumps may be different.
Another aspect of the present disclosure provides a method for manufacturing a touch-type micro light emitting diode display, comprising: providing a semiconductor lamination, wherein the upper surface of the semiconductor lamination is provided with a conductive layer, the conductive layer is provided with a plurality of conductive parts extending downwards, and the conductive parts are respectively and electrically connected with a plurality of conductive structures corresponding to the lower part; performing a first patterning process to simultaneously form a plurality of first conductive bumps and at least one bonding pad on the conductive layer, wherein the first conductive bumps respectively correspond to the conductive structures below; performing a second patterning process to remove a portion of the conductive layer and simultaneously generate a plurality of under bump metallization layers and at least one first sensing pattern on the upper surface of the semiconductor stack, wherein the under bump metallization layers are respectively sandwiched between the corresponding first conductive bumps and the conductive structures, and a portion of the at least one first sensing pattern is sandwiched between the at least one bonding pad and the upper surface of the semiconductor stack; forming corresponding second conductive bumps on each first conductive bump respectively; and disposing a plurality of micro light emitting diodes on the second conductive bumps.
According to one or more embodiments of the present disclosure, further comprising: at least one microstructure and at least one second sensing pattern are formed on the upper surface of the semiconductor lamination, and the at least one second sensing pattern is located on the at least one microstructure.
In accordance with one or more embodiments of the present disclosure, the conductive structures are fabricated using an RDL process.
In accordance with one or more embodiments of the present disclosure, the first conductive bumps, the at least one bonding pad, and the second conductive bumps are fabricated using an electroplating or vapor deposition process.
Drawings
The foregoing and other objects, features, advantages and embodiments of the invention will be more readily apparent from the following description of the drawings in which:
FIG. 1 is a schematic diagram of a prior art micro LED display.
Fig. 2 to 6 are flowcharts illustrating a method for manufacturing a touch-sensitive micro light emitting diode display according to an embodiment of the invention.
Various features and elements are not drawn to scale in accordance with conventional practice in the drawings in a manner that best serves to illustrate the specific features and elements that are pertinent to the present invention. In addition, like elements and components are referred to by the same or similar reference numerals among the different drawings.
The reference numerals are:
1: micro LED display
10: semiconductor substrate
20: aluminum connecting pad
30. 130: first protective layer
40. 150: a second protective layer
50: at least one rewiring layer
60: at least one under bump metallization layer
70: at least one copper bump
110: semiconductor substrate
120: connecting pad
140a, 140b: conductive structure
160: conductive layer
160a, 160b: under bump metallization layer
160c: at least one first sensing pattern
170a, 170b: first conductive bump
170c: at least one bonding pad
180a, 180b: second conductive bump
190: micro light emitting diode
200: at least one microstructure
210: at least one second sensing pattern
1000: touch-control miniature LED display
Detailed Description
The following disclosure provides various embodiments or examples to implement various features of the provided objects. Specific examples of components and arrangements are described below for purposes of simplifying the disclosure and are not intended to be limiting; the size and shape of the elements are not limited by the disclosed ranges or values, but may depend on the processing conditions or desired characteristics of the elements. For example, the technical features of the present invention are described using cross-sectional views, which are schematic illustrations of idealized embodiments. Thus, variations in the shapes of the illustrations as a result of manufacturing processes and/or tolerances are to be expected and should not be construed as limiting.
Furthermore, spatially relative terms, such as "below," "under …," "below," "over …," and "above," and the like, may be used for ease of description of the relationship between elements or features depicted in the drawings; further, spatially relative terms may be intended to encompass different orientations of the element in use or operation in addition to the orientation depicted in the figures.
Hereinafter, a touch micro light emitting diode display and a method for manufacturing the same according to the embodiments of the present invention will be described with reference to the drawings.
Referring to fig. 2 to 6, fig. 2 to 6 are flowcharts illustrating a method for manufacturing a touch-type micro light emitting diode display according to an embodiment of the invention.
First, as shown in fig. 2, in one embodiment of the present invention, a semiconductor stack is provided, which has a semiconductor substrate 110, a plurality of connection pads 120, a first passivation layer 130, a plurality of conductive structures 140a, a conductive structure 140b, and a second passivation layer 150. In an embodiment of the present invention, the semiconductor substrate 110 is, for example, a complementary metal oxide semiconductor wafer (CMOS wafer). The connection pads 120 are distributed in an array on the surface of the semiconductor substrate 110, for example, aluminum. The first protection layer 130 is disposed on the surface of the semiconductor substrate 110 and partially covers the connection pads 120. The second passivation layer 150 is disposed on the surface of the first passivation layer 130 and partially covers the conductive structures 140a and 140b. In one embodiment of the present invention, the conductive structures 140a, 140b may be formed by a redistribution layer (Redistribution Layer, RDL) process, for example, formed of copper (Cu); the conductive structures 140a, 140b may be p-pad (p-pad) or n-pad (n-pad) according to design requirements; in other embodiments of the present invention, the conductive structures 140a, 140b may be fabricated using other techniques, such as physical or chemical metal processes. In addition, the conductive structures 140a and 140b extend downward into the first protection layer 130 to electrically connect the connection pads 120, respectively.
As shown in fig. 2, the upper surface of the semiconductor stack has a conductive layer 160 having a plurality of conductive portions extending downward into the second passivation layer 150, and the conductive portions are electrically connected to the corresponding conductive structures 140a and 140b. In one embodiment of the present invention, the conductive layer 160 is made of a material such as titanium/copper (Ti/Cu) alloy, and may be manufactured by a physical or chemical metal process.
Next, referring to fig. 3, a metal layer is formed on the conductive layer 160 by using a technique such as a physical or chemical metal process, for example, using copper (Cu) or other metal materials. Then, a first patterning process is performed on the copper metal layer to simultaneously form a plurality of first conductive bumps 170a, 170b and at least one bonding pad 170c on the conductive layer 160. In detail, in the first patterning process according to an embodiment of the present invention, a photoresist (e.g. a negative photoresist) is used to define the positions, shapes and sizes of the first conductive bumps 170a and 170b and at least one bonding pad 170c through exposure and development steps, then the copper metal layer is etched and the photoresist is removed, and finally the portion of the copper metal layer left in the conductive layer 160 is formed into the first conductive bumps 170a and 170b and at least one bonding pad 170c. In this way, a plurality of first conductive bumps 170a and 170b and at least one bonding pad 170c can be formed on the conductive layer 160 at the same time, and the first conductive bumps 170a and 170b respectively correspond to the conductive structures 140a and 140b below. At this time, the copper metal layer is partially removed, so that a portion of the surface of the conductive layer 160 is exposed.
Referring to fig. 4, a second patterning process is performed on a portion of the exposed conductive layer 160, and a portion of the conductive layer 160 is removed by exposing, developing and etching with a suitable photoresist. After removing part of the conductive layer 160, part of the upper surface of the semiconductor stack is exposed, i.e. part of the upper surface of the second passivation layer 150 is exposed. It is to be noted that the portions of the conductive layer 160 that are not removed in the second patterning process are respectively used as a plurality of under bump metallization layers 160a, 160b and at least one first sensing pattern 160c. That is, an embodiment of the present invention simultaneously generates a plurality of under bump metallization layers 160a, 160b and at least one first sensing pattern 160c through the second patterning process. And, the under bump metallization layers 160a, 160b are respectively sandwiched between the corresponding first conductive bumps 170a, 170b and the conductive structures 140a, 140b, and a portion of the at least one first sensing pattern 160c is sandwiched between at least one bonding pad 170c and an upper surface of the semiconductor stack (i.e., an upper surface of the second passivation layer 150).
Then, referring to fig. 5, corresponding second conductive bumps 180a and 180b are formed on each of the first conductive bumps 170a and 170b, and a plurality of micro light emitting diodes 190 are disposed on the second conductive bumps 180a and 180 b. As shown in FIG. 5, the device thus completed can be used as a self-contained touch micro-LED display.
In addition, referring to fig. 6, if the device is to be used as a capacitive touch micro-led display, at least one microstructure 200 and at least one second sensing pattern 210 are further formed on the upper surface of the semiconductor stack (i.e. the upper surface of the second passivation layer 150), and the at least one second sensing pattern 210 is located on the at least one microstructure 200. In the embodiment of the invention, the first conductive bumps 170a and 170b, the at least one bonding pad 170c, and the second conductive bumps 180a and 180b are fabricated by electroplating or vapor deposition.
As shown in fig. 6, the touch-sensitive micro-led display 1000 is used as a mutual capacitance type touch-sensitive micro-led display; if at least one microstructure 200 and at least one second sensing pattern 210 are not included, the self-contained touch micro-LED display is provided.
For the touch-sensitive micro light emitting diode display 1000 of FIG. 6, it comprises: a semiconductor stack, a plurality of first conductive bumps 170a and 170b, at least one bonding pad 170c, a plurality of second conductive bumps 180a and 180b, a plurality of micro light emitting diodes 190, at least one micro structure 200, and at least one second sensing pattern 210. The semiconductor stack has a semiconductor substrate 110, a plurality of connection pads 120, a first passivation layer 130, a plurality of conductive structures 140a, a conductive structure 140b, and a second passivation layer 150.
As shown in fig. 6, the upper surface of the semiconductor stack (i.e., the upper surface of the second passivation layer 150) has a plurality of under- bump metallization layers 160a, 160b and at least one first sensing pattern 160c, the under- bump metallization layers 160a, 160b and the at least one first sensing pattern 160c have the same material and thickness, and the under- bump metallization layers 160a, 160b extend downward into the semiconductor stack to electrically connect to the corresponding plurality of conductive structures 140a, 140b. In an embodiment of the present invention, the conductive structures 140a, 140b are redistribution layers (Redistribution Layer, RDL).
As shown in fig. 6, the first conductive bumps 170a and 170b are electrically connected to the corresponding under bump metallization layers 160a and 160b, respectively.
As shown in fig. 6, at least one bonding pad 170c is disposed on at least one first sensing pattern 160c and partially overlaps at least one first sensing pattern 160c. At least one bonding pad 170c has the same material and thickness as the first conductive bumps 170a, 170b. In the embodiment of the invention, the thickness ratio of the first conductive bumps 170a, 170b to the at least one first sensing pattern 160c is greater than or equal to 5, preferably 10.
As shown in fig. 6, a plurality of second conductive bumps 180a, 180b are electrically connected to the corresponding first conductive bumps 170a, 170b respectively.
As shown in fig. 6, the micro leds 190 are disposed on the second conductive bumps 180a and 180 b.
As shown in fig. 6, at least one microstructure 200 and at least one second sensing pattern 210 are disposed on the upper surface of the semiconductor stack, and the at least one second sensing pattern 210 is located on the at least one microstructure 200, wherein the thickness of the at least one second sensing pattern 210 is greater than the thickness of the at least one microstructure 200. In addition, in the embodiment of the invention, the height of the at least one second sensing pattern 210 is greater than or equal to the height of the micro light emitting diodes 190, or at least is close to the height of the micro light emitting diodes 190.
In the embodiment of the present invention, the at least one first sensing pattern 160c and the at least one second sensing pattern 210 are a transmitting electrode (Tx) or a receiving electrode (Rx) each other.
In the embodiment of the present invention, the thicknesses and materials of the first conductive bumps 170a and 170b and the second conductive bumps 180a and 180b may be the same or different. In addition, other conductive bumps with different thicknesses and materials may be disposed on the second conductive bumps 180a and 180b according to design requirements.
The above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. A touch-sensitive micro light emitting diode display, comprising:
the semiconductor lamination is provided with a plurality of under-bump metallization layers and at least one first sensing pattern on the upper surface, wherein the under-bump metallization layers and the at least one first sensing pattern are made of the same material and have the same thickness, and the under-bump metallization layers extend downwards into the semiconductor lamination and are respectively and electrically connected with a plurality of corresponding conductive structures below;
a plurality of first conductive bumps electrically connected to the corresponding under bump metallization layer respectively;
at least one bonding pad disposed on the at least one first sensing pattern and partially overlapping the at least one first sensing pattern, the at least one bonding pad and the first conductive bump having the same material and thickness;
a plurality of second conductive bumps electrically connected to the corresponding first conductive bumps below; and
the micro light emitting diodes are arranged on the second conductive bumps.
2. The touch-sensitive micro light emitting diode display of claim 1, further comprising:
the at least one micro structure and the at least one second sensing pattern are arranged on the upper surface of the semiconductor lamination, and the at least one second sensing pattern is positioned on the at least one micro structure, wherein the thickness of the at least one second sensing pattern is larger than that of the at least one micro structure, and the height of the at least one second sensing pattern is larger than or equal to that of the miniature light emitting diode.
3. The touch-sensitive micro light emitting diode display of claim 1, wherein the conductive structure is a redistribution layer.
4. The touch-sensitive micro light emitting diode display of claim 1, wherein a thickness ratio of the first conductive bump to the at least one first sensing pattern is greater than or equal to 5.
5. The touch-sensitive micro light emitting diode display of claim 2, wherein the at least one first sensing pattern and the at least one second sensing pattern are mutually transmitting electrodes or receiving electrodes.
6. The touch-sensitive micro light emitting diode display of claim 1, wherein the thickness of the first conductive bump and the second conductive bump are the same or different from each other.
7. A manufacturing method of a touch micro light emitting diode display comprises the following steps:
providing a semiconductor lamination, wherein the upper surface of the semiconductor lamination is provided with a conductive layer, the conductive layer is provided with a plurality of conductive parts extending downwards, and the conductive parts are respectively and electrically connected with a plurality of conductive structures corresponding to the lower parts;
performing a first patterning process to simultaneously form a plurality of first conductive bumps and at least one bonding pad on the conductive layer, wherein the first conductive bumps respectively correspond to the conductive structures below;
performing a second patterning process to remove a portion of the conductive layer and simultaneously generate a plurality of under bump metallization layers and at least one first sensing pattern on the upper surface of the semiconductor stack, wherein the under bump metallization layers are respectively sandwiched between the corresponding first conductive bumps and the conductive structures, and a portion of the at least one first sensing pattern is sandwiched between the at least one bonding pad and the upper surface of the semiconductor stack;
forming corresponding second conductive bumps on each first conductive bump respectively; and
a plurality of micro light emitting diodes are disposed on the second conductive bumps.
8. The method of claim 7, further comprising:
at least one microstructure and at least one second sensing pattern are formed on the upper surface of the semiconductor lamination, and the at least one second sensing pattern is located on the at least one microstructure.
9. The method of claim 7, wherein the conductive structure is formed by RDL process.
10. The method of claim 7, wherein the first conductive bump, the at least one bonding pad and the second conductive bump are fabricated by electroplating or vapor deposition.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210283402.1A CN114597229B (en) | 2022-03-22 | 2022-03-22 | Touch-control type miniature light-emitting diode display and manufacturing method thereof |
| TW111111211A TWI804249B (en) | 2022-03-22 | 2022-03-24 | Touch-type miniature light-emitting diode display and manufacturing method thereof |
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| CN202210283402.1A CN114597229B (en) | 2022-03-22 | 2022-03-22 | Touch-control type miniature light-emitting diode display and manufacturing method thereof |
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| CN114597229A CN114597229A (en) | 2022-06-07 |
| CN114597229B true CN114597229B (en) | 2023-06-27 |
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| TW202002338A (en) * | 2018-06-22 | 2020-01-01 | 晶元光電股份有限公司 | Display apparatus with array of light emitting diodes and method of manufacturing the same |
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| TWI803287B (en) * | 2015-03-27 | 2023-05-21 | 日商半導體能源研究所股份有限公司 | Touch panel |
| DE102016206922A1 (en) * | 2015-05-08 | 2016-11-10 | Semiconductor Energy Laboratory Co., Ltd. | touchscreen |
| US10133426B2 (en) * | 2015-06-18 | 2018-11-20 | X-Celeprint Limited | Display with micro-LED front light |
| WO2017060487A2 (en) * | 2015-10-08 | 2017-04-13 | X-Celeprint Limited | Display with integrated electrodes |
| CN107256871B (en) * | 2017-06-27 | 2019-09-27 | 上海天马微电子有限公司 | Micro light-emitting diode display panel and display device |
| WO2019220246A1 (en) * | 2018-05-18 | 2019-11-21 | 株式会社半導体エネルギー研究所 | Display device, display module, electronic apparatus, and display device manufacturing method |
| CN108615740B (en) * | 2018-05-26 | 2020-11-10 | 矽照光电（厦门）有限公司 | Flexible active color semiconductor light-emitting display module and flexible display screen |
| EP3836234A4 (en) * | 2018-08-10 | 2022-05-04 | Lin, Hong-Cheng | Diode device, display panel, and flexible display |
| WO2021003702A1 (en) * | 2019-07-10 | 2021-01-14 | Boe Technology Group Co., Ltd. | Touch control micro light emitting diode display apparatus, method of operating touch control micro light emitting diode display apparatus, and method of fabricating touch control micro light emitting diode display apparatus |
| TWI771879B (en) * | 2020-06-16 | 2022-07-21 | 友達光電股份有限公司 | Touch display panel |
| TWI748621B (en) * | 2020-08-28 | 2021-12-01 | 友達光電股份有限公司 | Touch display device |
| CN114201073B (en) * | 2021-12-11 | 2023-11-07 | 武汉华星光电半导体显示技术有限公司 | Micro light-emitting diode touch display panel |
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| TW202002338A (en) * | 2018-06-22 | 2020-01-01 | 晶元光電股份有限公司 | Display apparatus with array of light emitting diodes and method of manufacturing the same |
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| TWI804249B (en) | 2023-06-01 |
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