TWI762172B - Light-emitting module and method of manufacturing the same - Google Patents

Abstract

A light-emitting module and a method of manufacturing the same are provided. The light-emitting module includes a circuit substrate, a plurality of light-emitting chips and an opaque layer. The light-emitting chips are disposed on the circuit substrate, and each of the light-emitting chips has a light-emitting surface. The opaque layer is disposed on the circuit substrate, and the opaque layer includes a plurality of openings for respectively exposing a plurality of light-emitting surfaces. The method of manufacturing the light-emitting module includes providing a circuit substrate, a plurality of light-emitting chips being disposed on the circuit substrate, each of the light-emitting chips having a light-emitting surface; forming an opaque material on the circuit substrate for covering the light-emitting chips; and removing a part of the opaque material to form an opaque layer having a plurality of openings, a plurality of light-emitting surfaces of the light-emitting chips being exposed by the opaque layer. Therefore, light sources respectively generated by the light-emitting surfaces of the light-emitting chips can respectively project out of the openings of the opaque layer.

Description

Light-emitting module and method of making the same

The present invention relates to a light-emitting module and a manufacturing method thereof, in particular to a light-emitting module for providing an image or a light source and a manufacturing method thereof.

Light emitting diode chips are generally used in light source modules or image displays. However, in the prior art, light source modules or image displays using multiple light emitting diode chips still have room for improvement.

The technical problem to be solved by the present invention is to provide a light-emitting module and a manufacturing method thereof aiming at the deficiencies of the prior art.

In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a method for manufacturing a light-emitting module, which includes: providing a circuit substrate, a plurality of light-emitting chips are arranged on the circuit substrate, and each light-emitting chip has a a light-emitting surface; forming an opaque material on the circuit substrate to cover a plurality of light-emitting chips; and removing a part of the opaque material to form an opaque layer with a plurality of openings, the plurality of light-emitting chips The plurality of light emitting surfaces are exposed by the opaque layer.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a light-emitting module, which includes: a circuit substrate, a plurality of first light-emitting chips, a plurality of second light-emitting chips a light-emitting chip, a plurality of third light-emitting chips and an opaque layer. A plurality of first light-emitting chips are disposed on the circuit substrate, and each first light-emitting chip has a first light-emitting surface. A plurality of second light-emitting chips are disposed on the circuit substrate, and each second light-emitting chip has a second light-emitting surface. A plurality of third light-emitting chips are disposed on the circuit substrate, and each third light-emitting chip has a third light-emitting surface. The opaque layer is arranged on the circuit substrate, the opaque layer has a plurality of first openings, a plurality of second openings and a plurality of third openings, and the plurality of first light-emitting surfaces of the plurality of first light-emitting chips are respectively covered by a plurality of first light-emitting surfaces. The first openings are exposed, the second light-emitting surfaces of the second light-emitting chips are exposed by the second openings, and the third light-emitting surfaces of the third light-emitting chips are respectively exposed by the third openings exposed.

In order to solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a light-emitting module, which includes: a circuit substrate, a plurality of light-emitting chips, and an opaque layer. A plurality of light-emitting chips are arranged on the circuit substrate, and each light-emitting chip has a light-emitting surface. The opaque layer is disposed on the circuit substrate, and the opaque layer has a plurality of openings for exposing the plurality of light-emitting surfaces respectively.

One of the beneficial effects of the present invention is that the present invention provides a method for manufacturing a light-emitting module, which can be achieved by "forming an opaque material on a circuit substrate to cover a plurality of light-emitting chips" and "removing the opaque material" A part of the light material to form an opaque layer with a plurality of openings, and a plurality of light-emitting surfaces of a plurality of light-emitting chips are exposed by the opaque layer” technical solution, so that the plurality of light-emitting chips of the plurality of light-emitting chips emit light. The light sources generated by the surface can be projected from a plurality of openings in the opaque layer, respectively.

One of the beneficial effects of the present invention is that a light-emitting module provided by the present invention can be provided by "a plurality of light-emitting chips are arranged on a circuit substrate, and each light-emitting chip has a light-emitting surface" and "a light-proof layer is arranged On the circuit substrate, and the opaque layer has a plurality of openings for exposing the plurality of light-emitting surfaces respectively”, so that the light sources generated by the plurality of light-emitting surfaces of the plurality of light-emitting wafers can be respectively opaque from the light. Multiple openings of the layer are projected.

For further understanding of the features and technical content of the present invention, please refer to the following The detailed description and drawings of the present invention, however, the drawings are provided for reference and illustration only, and are not used to limit the present invention.

Z: Lighting module

1: circuit board

2: Light-emitting chip

200: Glowing Surface

C1: The first light-emitting chip

C100: first light-emitting surface

C2: The second light-emitting chip

C200: Second luminous surface

C3: The third light-emitting chip

C300: Third light-emitting surface

M: opaque material

3: opaque layer

3000: Upper surface

300: Opening

P100: First opening

P200: Second opening

P300: Third opening

4: The first filling material

41: the first light wavelength conversion layer

4100: Upper surface

42: The first light-transmitting layer

4200: Upper surface

5: Second filling material

51: the second light wavelength conversion layer

5100: Upper surface

52: The second transparent layer

5200: Upper surface

6: The third filling material

61: The third light wavelength conversion layer

62: The third transparent layer

6200: Upper surface

G: Green projection beam

R: red projection beam

B: blue projection beam

W: White projection beam

FIG. 1 is a flowchart of a manufacturing method of a light emitting module according to a first embodiment of the present invention.

FIG. 2 is a schematic diagram of a plurality of light-emitting chips disposed on a circuit substrate according to the first embodiment of the present invention.

FIG. 3 is a schematic diagram of forming the opaque material on the circuit substrate according to the first embodiment of the present invention.

FIG. 4 is a schematic diagram of a portion of the opaque material being removed according to the first embodiment of the present invention.

FIG. 5 is a schematic diagram of a plurality of optical wavelength conversion layers respectively disposed in a plurality of openings according to the first embodiment of the present invention.

FIG. 6 is a schematic diagram of a first light-emitting module according to the first embodiment of the present invention.

FIG. 7 is a schematic diagram of a plurality of light-transmitting layers respectively disposed in a plurality of openings according to the first embodiment of the present invention.

FIG. 8 is a schematic diagram of a second light emitting module according to the first embodiment of the present invention.

FIG. 9 is a schematic diagram of a portion of the opaque material being removed according to the second embodiment of the present invention.

FIG. 10 is a schematic diagram of a plurality of optical wavelength conversion layers respectively disposed in a plurality of openings according to the second embodiment of the present invention.

FIG. 11 is a schematic diagram of a first light-emitting module according to the second embodiment of the present invention.

12 is a schematic diagram of a plurality of light-transmitting layers respectively disposed in a plurality of openings according to the second embodiment of the present invention.

FIG. 13 is a schematic diagram of a second light emitting module according to the second embodiment of the present invention.

FIG. 14 is a schematic diagram of a plurality of optical wavelength conversion layers respectively disposed in a plurality of openings according to the third embodiment of the present invention.

FIG. 15 is a schematic diagram of a light emitting module according to a third embodiment of the present invention.

The following are specific specific examples to illustrate the embodiments of the "light emitting module and its manufacturing method" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further describe the related technical contents of the present invention in detail, but the disclosed contents are not intended to limit the protection scope of the present invention. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.

1 to 14 , the present invention provides a method for manufacturing a light-emitting module, which includes: first, a circuit substrate 1 is provided, and a plurality of light-emitting chips 2 are disposed on the circuit substrate 1 , and each light-emitting chip 2 has a light-emitting surface 200; then, an opaque material M is formed on the circuit substrate 1 to cover the plurality of light-emitting chips 2; The light-emitting layer 3 , the light-emitting surfaces 200 of the light-emitting wafers 2 are exposed by the opaque layer 3 . Thereby, the light sources generated by the plurality of light-emitting surfaces 200 of the plurality of light-emitting chips 2 can be projected from the plurality of openings 300 of the opaque layer 3, respectively.

As shown in FIG. 1 to FIG. 14 , the present invention provides a light-emitting module Z, which includes: a circuit substrate 1 , a plurality of light-emitting chips 2 and an opaque layer 3 . A plurality of light-emitting chips 2 are disposed on the circuit substrate 1 , and each light-emitting chip 2 has a light-emitting surface 200 . The opaque layer 3 is disposed on the circuit substrate 1, and the opaque layer 3 has a plurality of openings 300 for exposing the plurality of light emitting surfaces 200, respectively. borrow Thus, the light sources generated by the plurality of light-emitting surfaces 200 of the plurality of light-emitting wafers 2 can be projected from the plurality of openings 300 of the opaque layer 3, respectively.

[First Embodiment]

Referring to FIGS. 1 to 6 , a first embodiment of the present invention provides a method for manufacturing a light-emitting module, which includes: first, as shown in FIGS. 1 and 2 , a circuit substrate 1 is provided, and a plurality of light-emitting chips 2 are arranged On the circuit substrate 1 , each light-emitting chip 2 has a light-emitting surface 200 (step S100 ); then, as shown in FIG. 1 and FIG. 3 , an opaque material M is formed on the circuit substrate 1 to cover a plurality of light-emitting surfaces wafer 2 (step S102 ); then, as shown in FIG. 1 , FIG. 3 and FIG. 4 , a part of the opaque material M is removed to form an opaque layer 3 having a plurality of openings 300 , a plurality of light-emitting chips The plurality of light-emitting surfaces 200 of 2 are exposed by the opaque layer (step S104); next, as shown in FIG. 1, FIG. 5 and FIG. Filling material 4, a second filling material 5 and a third filling material 6, the first filling material 4 is arranged in the plurality of openings 300 in the first part, and the second filling material 5 is arranged in the plurality of openings 300 in the second part , and the third filling material 6 is disposed in the plurality of openings 300 of the third part (step S106 ).

For example, as shown in FIGS. 4 to 6 , the plurality of light-emitting chips 2 are divided into a plurality of first light-emitting chips C1 , a plurality of second light-emitting chips C2 and a plurality of third light-emitting chips C3 . Each first light emitting chip C1 has a first light emitting surface C100, each second light emitting chip C2 has a second light emitting surface C200, and each third light emitting chip C3 has a third light emitting surface C300. In addition, the plurality of openings 300 are divided into a plurality of first openings P100, a plurality of second openings P200, and a plurality of third openings P300. The plurality of first light-emitting surfaces C100 of the plurality of first light-emitting chips C1 are respectively exposed by the plurality of first openings P100, and the plurality of second light-emitting surfaces C200 of the plurality of second light-emitting chips C2 are respectively covered by the plurality of second openings P200. are exposed, and the plurality of third light emitting surfaces C300 of the plurality of third light emitting chips C3 are respectively exposed by the plurality of third openings P300. However, the present invention is not limited to the above-mentioned examples.

For example, as shown in FIG. 4 , in the step of removing a portion of the opaque material M, the first light-emitting chip C1 is partially covered by the opaque layer 3 , and the second light-emitting chip C2 is partially covered by the opaque layer 3 . The light-transmitting layer 3 is covered, and the third light-emitting wafer C3 is partially covered by the light-opaque layer 3 . Furthermore, the opaque layer 3 may be a black opaque layer, and the plurality of first openings P100, the plurality of second openings P200 and the plurality of third openings P300 are processed by laser processing or plasma processing (plasma processing). (that is, the portion of the opaque material M is removed by laser processing or plasma processing). However, the present invention is not limited to the above-mentioned examples.

For example, as shown in FIG. 5 and FIG. 6 , the first filling material 4 includes a plurality of first light wavelength conversion layers 41 respectively disposed in the plurality of openings 300 of the first part and a plurality of openings respectively disposed in the first part The plurality of first light-transmitting layers 42 in 300 are respectively disposed on the plurality of first light wavelength conversion layers 41 . That is to say, after the plurality of first light wavelength conversion layers 41 are respectively formed in the plurality of openings 300 of the first part in advance (as shown in FIG. 5 ), the plurality of first light-transmitting layers 42 are respectively formed in the plurality of the first part. The openings 300 are respectively disposed on the plurality of first optical wavelength conversion layers 41 (as shown in FIG. 6 ), and the first optical wavelength conversion layers 41 and the first transparent layer 42 cooperate with each other to form a first composite material layer. Furthermore, the second filling material 5 includes a plurality of second light wavelength conversion layers 51 respectively disposed in the plurality of openings 300 of the second part and a plurality of second transparent layers 51 respectively disposed in the plurality of openings 300 of the second part. The optical layer 52 is provided, and the plurality of second light-transmitting layers 52 are respectively disposed on the plurality of second optical wavelength conversion layers 51 . That is to say, after the plurality of second light wavelength conversion layers 51 are respectively formed in the plurality of openings 300 in the second part in advance (as shown in FIG. 5 ), the plurality of second light-transmitting layers 52 are respectively formed in the second part The plurality of openings 300 are respectively disposed on the plurality of second light wavelength conversion layers 51 (as shown in FIG. 6 ), and the second light wavelength conversion layers 51 and the second light transmission layers 52 cooperate with each other to form a second light wavelength conversion layer 51. composite layer. In addition, the third filling material 6 includes a plurality of third light-transmitting layers 62 respectively disposed in the plurality of openings 300 of the third portion. However, the present invention is not limited to the above-mentioned examples.

For example, as shown in FIG. 5 , the plurality of first light wavelength conversion layers 41 are respectively disposed in the plurality of first openings P100 , and the plurality of first light wavelength conversion layers 41 respectively cover the plurality of first light-emitting wafers C1 on the plurality of first light-emitting surfaces C100. As shown in FIG. 6 , the plurality of first light-transmitting layers 42 are respectively disposed in the plurality of first openings P100, and the plurality of first light-transmitting layers 42 cover the plurality of first light wavelengths respectively. on the conversion layer 41 . As shown in FIG. 5 , the plurality of second light wavelength conversion layers 51 are respectively disposed in the plurality of second openings P200, and the plurality of second light wavelength conversion layers 51 respectively cover the plurality of second light emitting wafers C2. Two on the light-emitting surface C200. As shown in FIG. 6 , the plurality of second light-transmitting layers 52 are respectively disposed in the plurality of second openings P200 , and the plurality of second light-transmitting layers 52 respectively cover the plurality of second light wavelength conversion layers 51 . As shown in FIG. 6 , the plurality of third light-transmitting layers 62 are respectively disposed in the plurality of third openings P300 , and the plurality of third light-transmitting layers 62 respectively cover the plurality of third light-emitting layers of the plurality of third light-emitting wafers C3 Surface C300. However, the present invention is not limited to the above-mentioned examples.

For example, the plurality of first light-emitting chips C1, the plurality of second light-emitting chips C2, and the plurality of third light-emitting chips C3 may all be blue light-emitting diode chips for generating blue light sources, and the plurality of first light-emitting chips C3 The light-emitting chips C1, a plurality of second light-emitting chips C2, and a plurality of third light-emitting chips C3 may be arranged in a matrix. Furthermore, one of the first light wavelength conversion layer 41 and the second light wavelength conversion layer 51 may be a green quantum dot material layer mixed with a plurality of green quantum dot particles, and the third The other one of the light wavelength conversion layer 41 and the second light wavelength conversion layer 51 can be a red color with a plurality of fluoride fluorescent particles (eg K ₂ SiF ₆ : Mn ⁴⁺ (KSF)) mixed therein Phosphor material layer. Furthermore, as shown in FIG. 5 , the first light wavelength conversion layer 41 is a green quantum dot material layer mixed with a plurality of green quantum dot particles, and the second light wavelength conversion layer 51 is mixed with a plurality of green quantum dot particles. A layer of red phosphor material of fluoride phosphor particles. However, the present invention is not limited to the above-mentioned examples.

For example, as shown in FIG. 6 , when the first light wavelength conversion layer 41 is a green quantum dot material layer, the blue light source generated by the first light-emitting chip C1 passes through the green quantum dot material layer and is converted into a green projection beam G. In addition, when the second light wavelength conversion layer 51 is a red phosphor material layer, the blue light source generated by the second light-emitting chip C2 passes through the red phosphor material layer and is converted into a red projection beam R. In addition, the blue light source generated by the third light-emitting chip C3 passes through the third light-transmitting layer 62 to form a blue projection beam B. Thereby, the green projection beam G, the red projection beam R, and the blue projection beam B can be mixed with each other to form an image pixel. That is to say, the adjacent first light-emitting chip C1 (with the first light wavelength conversion layer 41 ), the second light-emitting chip C2 (with the use of the second light wavelength conversion The layer 51) and the third light-emitting chip C3 can cooperate with each other to provide an image pixel. However, the present invention is not limited to the above-mentioned examples.

For example, when the first light wavelength conversion layer 41 is a red phosphor material layer, the blue light source generated by the first light-emitting chip C1 passes through the red phosphor material layer and is converted into a red projection beam R. In addition, when the second light wavelength conversion layer 51 is a green quantum dot material layer, the blue light source generated by the second light-emitting chip C2 passes through the green quantum dot material layer and is converted into a green projection beam G. In addition, the blue light source generated by the third light-emitting chip C3 passes through the third light-transmitting layer 62 to form a blue projection beam B. Thereby, the green projection beam G, the red projection beam R, and the blue projection beam B can be mixed with each other to form an image pixel. That is to say, the adjacent first light-emitting chip C1 (with the first light wavelength conversion layer 41 ), the second light-emitting chip C2 (with the second light wavelength conversion layer 51 ) and the third light-emitting chip C3 can cooperate with each other for providing an image pixel. However, the present invention is not limited to the above-mentioned examples.

It should be noted that, as shown in FIG. 6 , an upper surface 4200 of each first transparent layer 42 , an upper surface 5200 of each second transparent layer 52 , and an upper surface 6200 of the third transparent layer 62 And an upper surface 3000 of the opaque layer 3 is flush with each other.

For example, as shown in FIG. 7 and FIG. 8 , the first filling material 4 includes a plurality of first light wavelength conversion layers 41 respectively disposed in the plurality of openings 300 of the first part and a plurality of openings respectively disposed in the first part The plurality of first light-transmitting layers 42 in 300 , and the plurality of first light wavelength conversion layers 41 are respectively disposed on the plurality of first light-transmitting layers 42 . That is to say, after the plurality of first light-transmitting layers 42 are respectively formed in the plurality of openings 300 of the first part in advance (as shown in FIG. 7 ), the plurality of first light wavelength conversion layers 41 are respectively formed on the plurality of openings 300 of the first part. The openings 300 are respectively disposed on the plurality of first light wavelength conversion layers 41 (as shown in FIG. 8 ). Furthermore, the second filling material 5 includes a plurality of second light wavelength conversion layers 51 respectively disposed in the plurality of openings 300 of the second part and a plurality of second transparent layers 51 respectively disposed in the plurality of openings 300 of the second part. The optical layer 52 and the plurality of second light wavelength conversion layers 51 are respectively disposed on the plurality of second light-transmitting layers 52 . That is to say, the plurality of second light-transmitting layers 52 are respectively formed on the second part in advance. After the plurality of openings 300 (as shown in FIG. 7 ), a plurality of second light wavelength conversion layers 51 are respectively formed in the plurality of openings 300 in the second part and respectively disposed on the plurality of second light-transmitting layers 52 ( as shown in Figure 8). In addition, the third filling material 6 includes a plurality of third light-transmitting layers 62 respectively disposed in the plurality of openings 300 of the third portion. However, the present invention is not limited to the above-mentioned examples.

For example, as shown in FIG. 7 , the plurality of first light-transmitting layers 42 are respectively disposed in the plurality of first openings P100 , and the plurality of first light-transmitting layers 42 respectively cover the plurality of first light-emitting wafers C1 . on the first light-emitting surface C100. As shown in FIG. 8 , the plurality of first light wavelength conversion layers 41 are respectively disposed in the plurality of first openings P100 , and the plurality of first light wavelength conversion layers 41 respectively cover the plurality of first light-transmitting layers 42 . As shown in FIG. 7 , the plurality of second light-transmitting layers 52 are respectively disposed in the plurality of second openings P200 , and the plurality of second light-transmitting layers 52 respectively cover the plurality of second light-emitting chips C2 of the plurality of second light-emitting wafers C2 on the surface C200. As shown in FIG. 8 , the plurality of second light wavelength conversion layers 51 are respectively disposed in the plurality of second openings P200 , and the plurality of second light wavelength conversion layers 51 respectively cover the plurality of second light-transmitting layers 52 . As shown in FIG. 7 , the plurality of third light-transmitting layers 62 are respectively disposed in the plurality of third openings P300 , and the plurality of third light-transmitting layers 62 respectively cover the plurality of third light-emitting layers of the plurality of third light-emitting wafers C3 Surface C300. However, the present invention is not limited to the above-mentioned examples.

It is worth noting that, as shown in FIG. 8 , an upper surface 4100 of each first optical wavelength conversion layer 41 , an upper surface 5100 of each second optical wavelength conversion layer 51 , and an upper surface of the third transparent layer 62 The surface 6200 and an upper surface 3000 of the opaque layer 3 are flush with each other.

Therefore, as shown in FIG. 6 or FIG. 8 , the first embodiment of the present invention provides a light-emitting module Z, which includes: a circuit substrate 1 , a plurality of first light-emitting chips C1 , a plurality of second light-emitting chips C2 , a plurality of a third light-emitting chip C3 and an opaque layer 3 . A plurality of first light-emitting chips C1 are disposed on the circuit substrate 1, and each of the first light-emitting chips C1 has a first light-emitting surface C100. A plurality of second light-emitting chips C2 are disposed on the circuit substrate 1, and each second light-emitting chip C2 has a second light-emitting surface C200. A plurality of third light-emitting chips C3 are disposed on the circuit substrate 1, and each third light-emitting chip C3 has a third light-emitting surface C300. The opaque layer 3 is arranged on the circuit substrate 1, and the opaque layer 3 There are multiple first openings P100, multiple second openings P200 and multiple third openings P300. The plurality of first light-emitting surfaces C100 of the plurality of first light-emitting chips C1 are respectively exposed by the plurality of first openings P100, and the plurality of second light-emitting surfaces C200 of the plurality of second light-emitting chips C2 are respectively covered by the plurality of second openings P200. are exposed, and the plurality of third light emitting surfaces C300 of the plurality of third light emitting chips C3 are respectively exposed by the plurality of third openings P300.

Furthermore, as shown in FIG. 6 , the light-emitting module Z provided by the first embodiment of the present invention further includes: a first filling material 4 , a second filling material 5 and a third filling material 6 . The first filling material 4 includes a plurality of first light wavelength conversion layers 41 respectively disposed in the plurality of first openings P100 and a plurality of first light-transmitting layers 42 respectively disposed in the plurality of first openings P100. The second filling material 5 includes a plurality of second light wavelength conversion layers 51 respectively disposed in the plurality of second openings P200 and a plurality of second light-transmitting layers 52 respectively disposed in the plurality of second openings P200. The third filling material 6 includes a plurality of third light-transmitting layers 62 respectively disposed in the plurality of third openings P300.

[Second Embodiment]

Referring to FIG. 9 to FIG. 13 , a second embodiment of the present invention provides a light-emitting module Z and a manufacturing method thereof. As shown in FIGS. 9 to 13 and FIGS. 4 to 8 respectively, the biggest difference between the second embodiment of the present invention and the first embodiment is that in the second embodiment, as shown in FIG. 9 , the first light-emitting chip C1 Not covered by the opaque layer 3 at all, the second light emitting chip C2 is not covered by the opaque layer 3 at all, and the third light emitting chip C3 is not covered by the opaque layer 3 at all.

[Third Embodiment]

Referring to FIG. 14 and FIG. 15 , a third embodiment of the present invention provides a light-emitting module Z and a manufacturing method thereof. As shown in FIGS. 14 and 15 and FIGS. 5 and 6 respectively, the biggest difference between the third embodiment of the present invention and the first embodiment is that the light-emitting module Z provided by the third embodiment includes a plurality of light wavelength conversion layers , each opening is filled with at least one light wavelength conversion layer, and the opaque layer 3 is a white opaque layer.

For example, the light-emitting module Z provided by the third embodiment includes a first filling material 4. A second filling material 5 and a third filling material 6 . The first filling material 4 includes a plurality of first light wavelength conversion layers 41 respectively disposed in the plurality of first openings P100 and a plurality of first light-transmitting layers 42 respectively disposed in the plurality of first openings P100. The second filling material 5 includes a plurality of second light wavelength conversion layers 51 respectively disposed in the plurality of second openings P200 and a plurality of second light-transmitting layers 52 respectively disposed in the plurality of second openings P200. The third filling material 6 includes a plurality of third light wavelength conversion layers 61 respectively disposed in the plurality of third openings P300 and a plurality of third light-transmitting layers 62 respectively disposed in the plurality of third openings P300. Furthermore, each first light wavelength conversion layer 41 is mixed with a plurality of green quantum dot particles and a plurality of fluoride fluorescent particles (that is, a plurality of green quantum dot particles and a plurality of fluoride fluorescent particles are mixed therein. a first mixed material layer), each second light wavelength conversion layer 51 is mixed with a plurality of green quantum dot particles and a plurality of fluoride fluorescent particles (that is, mixed with a plurality of green quantum dot particles and A second mixed material layer of a plurality of fluoride fluorescent particles), and each third light wavelength conversion layer 61 is mixed with a plurality of green quantum dot particles and a plurality of fluoride fluorescent particles (that is, mixed with a third hybrid material layer with a plurality of green quantum dot particles and a plurality of fluoride fluorescent particles). However, the present invention is not limited to the above-mentioned examples.

Thereby, when a blue light source generated by a light-emitting chip (such as the first light-emitting chip C1, the second light-emitting chip C2 or the third light-emitting chip C3) passes through the corresponding light wavelength conversion layer (for example, the first light wavelength conversion layer) 41. When the second light wavelength conversion layer 51 or the third light wavelength conversion layer 61) is used, the blue light source generated by the light-emitting chip will be converted into a white projection beam W, so that the light-emitting module Z can be regarded as being able to be applied to A backlight module of a display.

It is worth noting that when each opening is filled with two optical wavelength conversion layers, one of the optical wavelength conversion layers is an “optical wavelength conversion layer mixed with a plurality of green quantum dot particles”, and the other optical wavelength conversion layer is The layer is an "optical wavelength conversion layer in which a plurality of fluoride fluorescent particles are mixed". When a blue light source generated by the light-emitting chip passes through the "light wavelength conversion layer mixed with a plurality of green quantum dot particles" and the "light wavelength conversion layer mixed with a plurality of fluoride fluorescent particles", the light-emitting chip The generated blue light source is also converted into a white projection beam, so that the light-emitting module Z can be regarded as a capable A backlight module applied to a display. However, the present invention is not limited to the above-mentioned examples.

[Advantageous effects of the embodiment]

One of the beneficial effects of the present invention is that the present invention provides a method for manufacturing a light-emitting module, which can cover a plurality of light-emitting chips 2 by “forming an opaque material M on the circuit substrate 1” and “moving A part of the opaque material M is removed to form an opaque layer 3 having a plurality of openings 300, and the plurality of light-emitting surfaces 200 of the plurality of light-emitting chips 2 are exposed by the opaque layer 3” technical solution, so that The light sources generated by the plurality of light-emitting surfaces 200 of the plurality of light-emitting wafers 2 can be projected from the plurality of openings 300 of the opaque layer 3 , respectively.

One of the beneficial effects of the present invention is that a light-emitting module Z provided by the present invention can be provided by "a plurality of light-emitting chips 2 are disposed on the circuit substrate 1, and each light-emitting chip 2 has a light-emitting surface 200" and " The opaque layer 3 is disposed on the circuit substrate 1, and the opaque layer 3 has a technical solution of a plurality of openings 300" for exposing the plurality of light-emitting surfaces 200, so that the plurality of light-emitting chips 2 emit light. The light sources generated by the surface 200 can be projected from the plurality of openings 300 of the opaque layer 3 respectively.

The contents disclosed above are only preferred feasible embodiments of the present invention, and are not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

Z: Lighting module

1: circuit board

2: Light-emitting chip

C1: The first light-emitting chip

C2: The second light-emitting chip

C3: The third light-emitting chip

3: opaque layer

3000: Upper surface

4: The first filling material

41: the first light wavelength conversion layer

4100: Upper surface

42: The first light-transmitting layer

5: Second filling material

51: the second light wavelength conversion layer

5100: Upper surface

52: The second transparent layer

6: The third filling material

62: The third transparent layer

6200: Upper surface

G: Green projection beam

R: red projection beam

B: blue projection beam

Claims (1)

A light-emitting module, comprising: a circuit substrate; a plurality of first light-emitting chips, the plurality of first light-emitting chips are arranged on the circuit substrate, and each of the first light-emitting chips has a first light-emitting surface; a plurality of second light-emitting chips, a plurality of the second light-emitting chips are disposed on the circuit substrate, each of the second light-emitting chips has a second light-emitting surface; a plurality of third light-emitting chips, a plurality of the first light-emitting chips Three light-emitting chips are disposed on the circuit substrate, each of the third light-emitting chips has a third light-emitting surface; an opaque layer is disposed on the circuit substrate, and the opaque layer is disposed on the circuit substrate. The light layer has a plurality of first openings, a plurality of second openings and a plurality of third openings, and the plurality of first light-emitting surfaces of the plurality of first light-emitting chips are respectively exposed by the plurality of first openings, The second light-emitting surfaces of the second light-emitting wafers are exposed by the second openings, and the third light-emitting surfaces of the third light-emitting wafers are respectively exposed by the plurality of the second openings. exposed by each of the third openings; a first filling material, the first filling material includes a plurality of first light wavelength conversion layers respectively disposed in a plurality of the first openings and a plurality of the first light wavelength conversion layers respectively disposed in the plurality of the A plurality of first light-transmitting layers in the first opening; a second filling material, the second filling material includes a plurality of second light wavelength conversion layers respectively arranged in the plurality of second openings and respectively arranged in a plurality of second light-transmitting layers in the plurality of second openings; and a third filling material, the third filling material including a plurality of third light-transmitting layers respectively disposed in the plurality of third openings ; wherein the first light-emitting wafer is partially covered by the opaque layer or not at all covered by the opaque layer, and the second light-emitting wafer is partially covered by the opaque layer Covered by the opaque layer or not at all covered by the opaque layer, and the third light-emitting wafer is partially covered by the opaque layer or not at all covered by the opaque layer covered; wherein, a plurality of the first light-transmitting layers are respectively covered on a plurality of the first light-emitting surfaces of the first light-emitting wafers, and a plurality of the first light wavelength conversion layers are respectively covered on a plurality of the first light-transmitting layers; wherein a plurality of the second light-transmitting layers respectively cover a plurality of the second light-emitting surfaces of the second light-emitting wafers, and a plurality of the first light-emitting surfaces Two light wavelength conversion layers respectively cover the plurality of second light-transmitting layers; wherein, the plurality of third light-transmitting layers respectively cover the plurality of the third light-emitting surfaces of the plurality of the third light-emitting wafers above; wherein, the opaque layer is a white opaque layer or a black opaque layer, and a plurality of the first openings, a plurality of the second openings and a plurality of the third openings are used laser or plasma processing; wherein, one of the first light wavelength conversion layer and the second light wavelength conversion layer is a green quantum dot mixed with a plurality of green quantum dot particles. material layer, and the other one of the first light wavelength conversion layer and the second light wavelength conversion layer is a red phosphor material layer mixed with a plurality of fluoride phosphor particles, wherein each One of the first light-emitting chips, each of the second light-emitting chips and each of the third light-emitting chips respectively generates a blue light source, and each of the green quantum dot material layers is used to convert each of the first light-emitting chips The blue light source generated by the light-emitting chip or each of the second light-emitting chips is converted into a green projection beam, and each of the red phosphor material layers is used to convert each of the first light-emitting chips or each of the light-emitting chips. The blue light source generated by the second light-emitting chip is converted into a red projection beam.

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