CN105051892A - 电力用半导体模块 - Google Patents
电力用半导体模块 Download PDFInfo
- Publication number
- CN105051892A CN105051892A CN201480013718.2A CN201480013718A CN105051892A CN 105051892 A CN105051892 A CN 105051892A CN 201480013718 A CN201480013718 A CN 201480013718A CN 105051892 A CN105051892 A CN 105051892A
- Authority
- CN
- China
- Prior art keywords
- fin
- circuit board
- insulation circuit
- semiconductor module
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
- H05K7/20263—Heat dissipaters releasing heat from coolant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/205—Heat-dissipating body thermally connected to heat generating element via thermal paths through printed circuit board [PCB]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
- H05K7/20927—Liquid coolant without phase change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
Abstract
提供即使接合于绝缘配线基板的下侧的散热基板比以往薄,也能够缓和将绝缘配线基板和散热基板进行接合的焊料层所产生的应力集中,在焊料层中也不易发生裂纹的电力用半导体模块。一种电力半导体模块,具备:绝缘布线基板(1);搭载于该绝缘布线基板(1)的一个主表面上的半导体元件(4);接合于该绝缘布线基板(1)的另一个主表面的散热基板(10a);一端固定于该散热基板(10a)的另一个主表面且另一端为自由端的多个翅片(10b);用于收容该多个翅片(10b)且供冷却液在该翅片(10b)间流动的水套(11),上述多个翅片的至少一部分的另一端接合于上述水套(11)而形成加强翅片。
Description
技术领域
本发明涉及控制大电流、高电压的半导体装置中所使用的电力用半导体模块。
背景技术
在以混合动力汽车和/或电动汽车等为代表的使用马达的设备中,以往为了节能而利用了电力变换装置。在该电力变换装置中,可广泛使用包含IGBT(InsulatedGateBipolarTransistor:绝缘栅双极型晶体管)等电力用半导体元件的电力用半导体模块。由于电力用半导体元件在控制大电流时会发热,所以为了冷却该电力用半导体元件,实际上利用将多个翅片设置于散热基板而一体化的水冷式的电力用半导体模块的结构。
这样的电力用半导体模块例如具备绝缘布线基板,该绝缘布线基板具有由绝缘性薄板构成的陶瓷基板、直接接合或者钎焊于该基板的一个表面的金属电路布线层、以及直接接合或者钎焊于另一个表面的几乎整面的金属层。在上述金属电路布线层的表面的一部分具备焊接的电力用半导体元件,在形成于上述绝缘布线基板的背面的金属层上具备焊接的散热基板。并且已知有在该散热基板的背面(下侧面)具备以预定的间隔一体接合的多个翅片、和具有以易于使冷却水在形成于该多个翅片间的空间流动的间隙包围整个翅片的收容器的结构的电力用半导体模块(专利文献1)。该电力用半导体模块具有不插入翅片保持用的新的散热基板的结构或者在散热基板与翅片之间不夹设散热硅脂的结构。即,通过构成为将安装了半导体元件的绝缘布线基板直接接合于与翅片一体化的散热基板,能够减少从半导体元件至散热基板的热阻,实现散热性的改善和产品的可靠性的提高。该散热基板一般大多由以铝或者铜为主成分的材料构成。
在其它的文献中,记载了减少因构成半导体模块的部件间的热膨胀差所导致的应力,实现部件的减少、半导体模块的小型化以及简单化的半导体元件冷却用散热器的相关技术(专利文献2、3)。
另外,在其它的文献中,记载了能够抑制散热片的翘曲,并且将翘曲抑制板材容易地钎焊到散热片的半导体装置的相关技术(专利文献4)。
现有技术文献
专利文献
专利文献1:日本特开2007-36094号公报
专利文献2:日本特开2007-173301号公报
专利文献3:日本特开2008-270297号公报
专利文献4:日本特开2010-182831号公报
发明内容
技术问题
在上述的具备使散热基板和翅片一体化的翅片基底的电力用半导体模块中,作为构成绝缘布线基板的绝缘性薄板的陶瓷基板的线膨胀系数一般为3×10-6/℃~8×10-6/℃的程度。相对于此,构成翅片基底的散热基板的线膨胀系数例如为铝的情况下是23×10-6/℃左右,为铜的情况下是17×10-6/℃左右,与绝缘性薄板相比较大。由于这些线膨胀系数差,所以热循环时产生热应力,由于该热应力,设置于绝缘布线基板的金属层与翅片基底的散热基板之间且接合金属层和散热基板的焊料层中产生裂纹,存在发生断裂的问题。
近年来,电力用半导体模块针对小型化和/或高耐热化的要求越发严格。作为应对这些要求的一个对策,有对与翅片一体接合的散热基板进行薄板化。若使散热基板变薄,则能够降低热阻,能够降低电力用半导体模块的半导体元件的温度Tj。但是,另一方面,若使散热基板变薄,则散热基板容易变形,模块整体的翘曲变大。若翘曲大,则存在将绝缘布线基板和散热基板进行接合的焊料层中易于发生裂纹的问题。
因此,本发明考虑到上述的问题,其目的在于提供即便使接合于绝缘布线基板的下侧的散热基板变薄,也能够抑制模块整体的翘曲,并且在将绝缘布线基板和散热基板进行接合的焊料层中不易产生裂纹的电力用半导体模块。
技术方案
为了解决上述的课题,实现其目的,本发明涉及一种电力用半导体模块,所述电力用半导体模块具备:绝缘布线基板;搭载于该绝缘布线基板的一个主表面上的半导体元件;接合于该绝缘布线基板的另一个主表面的散热基板;一端固定于该散热基板的另一个主表面且另一端为自由端的多个翅片;以及用于收容该多个翅片且使冷却液在该翅片间流动的水套,上述多个翅片中的至少一部分翅片的上述另一端接合于上述水套而形成加强翅片。
优选地,上述绝缘布线基板具备绝缘性薄板、接合于该绝缘性薄板的一个主表面的金属电路布线层以及接合于另一个主表面的金属层。
另外,优选地,上述加强翅片包含在上述绝缘布线基板的下方,而且位于将上述绝缘布线基板的一个边的长度设为A、将从上述绝缘布线基板的端部到上述加强翅片位置的距离设为B时,以百分率计B/A之比率为20%以下的位置的翅片。
另外,上述加强翅片包含在所述绝缘布线基板的下方,而且位于从上述绝缘性基板的对置的两侧边起算向内侧相隔上述距离B的位置的至少一对翅片。
另外,优选地,上述加强翅片的上述另一端具备接合于上述水套的区域和自由端的区域。
发明效果
根据本发明,能够提供即便使接合于绝缘布线基板的下侧的散热基板变薄,也能够抑制模块整体的翘曲,并且在将绝缘布线基板和散热基板进行接合的焊料层中不易产生裂纹的电力用半导体模块。
附图说明
图1是本发明的一个实施方式的电力用半导体模块的剖面示意图。
图2是比较实验例1的现有的电力用半导体模块的剖视图。
图3是示出本发明的一实施方式的电力用半导体模块的绝缘布线基板的尺寸A和从该绝缘布线基板的端部到加强翅片为止的距离B的剖视图。
图4是包含本发明的一个实施方式的实验例1~3和比较实验例1~4,是基于热应力模拟的B/A比率(%)、与比较实验例1进行了比较的翘曲量的比率(%)以及与比较实验例1进行了比较的塑性变形幅度的比率(%)之间的关系图。
符号说明
1:绝缘布线基板
2:壳体
3:键合线
4:半导体元件
5:焊料层
6:金属电路布线层
7:绝缘性薄板
8:金属层
9:焊料层
10:翅片基底
10a:散热基板
10b:翅片
10c:加强翅片
11:水套
12:外部导出用电极端子
100:电力用半导体模块
具体实施方式
以下,对本发明的电力用半导体模块的实施例,参照附图进行详细说明。在以下的实施例的说明和附图中,对相同的构成标记相同的符号,省略重复的说明。另外,为了易于观察和理解,在实施例中说明的附图没有以正确的刻度、尺寸比描绘。本发明只要不超过其主旨,就不限定于以下说明的实施例的记载。
首先,对于本发明的电力用半导体模块的实施方式的整体技术思想或者考虑方式,使用附图进行说明。图1中以剖视图示出的本发明的一个实施方式的电力用半导体模块100,虽然在图示的范围中半导体元件4的数量示出了四个,但若包含图示范围外的半导体元件,也可以具有例如六个IGBT(InsulatedGateBipolarTransistor)和六个续流二极管(FreeWheelingDiode:FWD)而构成三相变频器电路。
绝缘布线基板1由绝缘性薄板7、金属电路布线层6以及金属层8构成。金属电路布线层6配置在绝缘性薄板7的正面。金属层8配置在绝缘性薄板7的背面。在金属电路布线层6上,经由焊料层5接合有半导体元件4。
半导体元件4在其上部设置未图示的上部电极,从该上部电极经由键合线3导电连接到外部导出用电极端子12。代替外部导出用电极端子12,键合线3的连接点可以连接到金属电路布线层6的所需要的位置。
翅片基底10由散热基板10a、一端接合于该散热基板10a的下表面而安装的翅片10b以及加强翅片10c构成。水套11以覆盖翅片10b和加强翅片10c的方式接合到散热基板10a。金属层8经由焊料层9接合到散热基板10a表面。
焊接在翅片基底10的散热基板10a表面上的上述绝缘布线基板1和半导体元件4优选由比半导体元件4的高度更高的树脂壳体2包围。侧面由树脂壳体2、底部由翅片基底10包围的空间通过注入未图示的树脂而填埋、或通过未图示的树脂盖而覆盖。也可以一同实施用树脂填埋和用树脂盖覆盖的两种方式。其结果,能够保护内部的半导体元件4远离外部环境和机械外部应力。
该绝缘布线基板1是已知的部件,例如具有由陶瓷基板等的绝缘性薄板7、直接接合或者钎焊于该绝缘性薄板7的正面的薄的金属电路布线层6、接合于该绝缘性薄板7的背面的金属层8构成的构成。作为绝缘布线基板1的绝缘性薄板7,可以使用例如以氮化铝、氧化铝、或者氮化硅等为原材料的陶瓷基板。构成绝缘布线基板1的金属电路布线层6和金属层8使用铜和/或铝等的导电性良好的金属箔,预先直接接合或者钎焊于绝缘性薄板7。
应予说明,在图1中示出了以两个半导体元件4为单位接合于绝缘布线基板1上的构成,但本发明的电力用半导体模块100并不限于接合在绝缘布线基板1上的半导体元件4为两个的情况,可以为一个,也可以为三个以上。
另外,在图1的电力用半导体模块100中,虽然示出了具备两个半导体元件4接合在绝缘布线基板1上的两个绝缘布线基板1的构成,但本发明的电力用半导体模块100并不限定于绝缘布线基板1为两个的构成。绝缘布线基板1的个数可以根据采用电力用半导体模块100的外部电路及其用途或者功能,进行适当的变更。
安装有半导体元件4的绝缘布线基板1在绝缘布线基板1的下表面的金属层8与翅片基底10之间经由焊料层9而接合,能够使从半导体元件4到翅片基底10之间的热阻处于较低的状态。
作为翅片10b和加强翅片10c的形态,例如可以使用刀片式翅片、波纹式翅片、针式翅片。刀片式翅片是指刀片(blade)形状的多个翅片相互平行地以预定的间隔接合于散热基板10a。波纹式翅片是指将一个板以一定的距离间隔周期性地折叠而接合于散热基板10a而成的翅片。针式翅片是指使圆柱或者棱柱形状的多个针以空出预定的间隔的排列接合于散热基板10a而成的翅片。翅片的形态并不限于这些刀片式翅片、波纹式翅片、针式翅片,还可以使用不同的各种形态。但是,由于将冷却液流入翅片的间隙时翅片成为阻力,所以翅片优选具有对冷却液的流动而言压力损耗小的形状。
如上所述,翅片基底10具有一端接合于散热基板10a的下表面而安装的翅片10b和加强翅片10c。翅片10b的远离散热基板10a的另一端为自由端,加强翅片10c的远离散热基板10a的另一端接合于水套11。
以往,所有翅片的远离翅片基底10的另一端为自由端。然而,在上述以往的方式中,出于减少热阻、降低半导体元件4的接合温度Tj的目的,使固定有翅片的一端侧的散热基板10a变薄的情况下,翅片基底10易于变形,模块整体的翘曲增大,热应力易于集中在将散热基板10a和绝缘布线基板1进行接合的焊料层9。若热应力集中在该焊料层9,则存在焊料层9中有裂纹等的问题,可能导致接合面的断裂的问题。
在本发明中,通过将多个翅片中的至少一部分翅片的自由端(另一端侧)接合于水套11而作为加强翅片10c,能够抑制由翅片基底10的变形导致的模块整体的翘曲,能够避免焊料层9中有裂纹等问题。
在本发明中,虽然也可以将所有翅片的另一端接合于水套11并进行固定而作为加强翅片10c,但在该情况下,会产生压力损耗上升的缺陷。因此,优选地,将翅片的一部分作为加强翅片10c,而其它翅片10b的远离散热基板10a的另一端为自由端。
在本发明的电力用半导体模块100中,翅片10b和加强翅片10c将其一端侧接合于散热基板10a,翅片10b、10c和散热基板10a构成为一体。构成一体的方法可以利用铸造、钎焊、焊接、挤出法等。另外,也可以通过压铸和/或加压鍛造,在制造散热基板10a的同时形成成为翅片10b、10c的大致外形的凸部,然后通过切削和/或线切割法将该凸部精加工成所希望的翅片形状,由此能够形成翅片基底10。另外,仅利用加压鍛造法,能够一体形成翅片10b、10c和散热基板10a。
并且,将位于绝缘布线基板1的下侧的翅片中的一部分的另一端接合于水套11而形成加强翅片10c。也可以使加强翅片10c的另一端具备接合于水套11的区域和自由端的区域。由于自由端的区域越宽,冷却液流通时的压力损耗变少,所以能够减少输送冷却液的泵的负荷。
并且,如图1所示,水套11具有上部开口的凹型形状,接合于散热基板10a的周边的下表面将翅片10b和加强翅片10c收容于内部。另外,水套11具有未图示的冷却液的导入口和排出口。通过在这样的水套11内流动冷却液,翅片10b、加强翅片10c利用冷却液进行冷却。排出的冷却液被回收,利用未图示的热交换器将热释放到外部后,通过未图示的泵被导入到导入口进行循环。优选地,水套11与散热基板10a、翅片10b、加强翅片10c同样地由导热率高的材料构成,特别优选为金属材料。例如可以使用铝、铝合金、铜、铜合金等的金属材料来形成。
实施例
接下来,参照图1~图4和表1对本发明的电力用半导体模块100的具体的一个实施例的结构和发明的效果进行详细说明。图1所示的绝缘布线基板1由绝缘性薄板7、绝缘性薄板7的正面侧的金属电路布线层6以及绝缘性薄板7的背面侧的金属层8构成。绝缘性薄板7是0.32mm厚的以氮化硅为主成分的陶瓷基板。可以使用如下的绝缘布线基板,表面侧的金属电路布线层6和背面侧的金属层8分别为0.4mm厚的铜箔,通过绝缘性薄板7和铜箔的共晶反应预先直接接合。绝缘布线基板1与翅片基底10的散热基板10a之间使用Sn-Sb系焊料作为焊料层9,以约0.45mm的厚度进行接合。
翅片基底10通过对铝材料进行挤出成型而形成。使散热基板10a的厚度为1mm,与现有的散热基板的厚度2.0~5.0mm相比较薄。以0.8mm的厚度形成翅片10b和加强翅片10c。在一端接合于散热基板10a且另一端全部为自由端的现有的翅片基底的情况下,若散热基板10a的厚度不满足至少为1.2mm以上、优选为2mm以上时,由于施加到散热基板10a的应力,可能产生翅片基底10的变形。若产生翅片基底10的变形,则接合绝缘布线基板1和散热基板10a之间的焊料层9中可能产生裂纹。
能够使本发明的翅片基底10的散热基板10a与现有的基板相比较薄的理由是,形成了如下的构成,使翅片的另一端不全为自由端,而是包含具有自由端的翅片10b和另一端接合于水套11的加强翅片10c。并且,在本发明的优选的方式中,特征在于配置该加强翅片10c的位置。即,将绝缘布线基板1的一边的长度设为A、将从绝缘布线基板1的端部到配置于绝缘布线基板1的内侧位置的加强翅片10c的位置为止的距离设为B时,使配置加强翅片10c的位置设为从绝缘布线基板1的端部向内侧方向以百分率计B/A优选为20%以内,更优选为15%以内。以下对这样的加强翅片10c的配置构成的理由和模拟的实验结果进行说明。
散热基板10a、翅片10b、加强翅片10c以及水套11优选为由导热率高的材料构成,特别优选为金属材料。例如可以使用铝、铝合金、铜、铜合金等的金属材料而形成。更优选为可使用铝或者铝合金。散热基板10a、翅片10b、加强翅片10c以及水套11可以利用相同种类的金属材料,也可以利用不同种类的金属材料。若为相同种类的金属材料,容易进行制造。
对于具有上述本发明的特征的加强翅片10c的配置的构成和完全不具有加强翅片10c的构成的电力用半导体模块,通过热应力模拟,观察热循环时焊料层9中产生的塑性变形幅度和焊接后的模块的翘曲量之间的关系。
这里,对与塑性变形幅度相关的已知的法则进行说明。一般,焊料的低循环疲劳寿命遵循下式的曼森-科芬方程。
(Δεp:塑性变形幅度,Nf:疲劳寿命,b和C:材料的常量)
因此,为了延长疲劳寿命,在上述曼森-科芬方程中使塑性变形幅度变小即可。
表1中示出了在本发明的电力用半导体模块的实验例和比较实验例中,在热应力模拟中所使用的数据和得到的结果值的一览。
[表1]
在表1中,将所有翅片10b的另一端为自由端的情况设为比较实验例1。将比较实验例1的电力用半导体模块的剖视图示于图2。图2与图1所示的电力用半导体模块的剖视图的不同点在于翅片基底10的翅片10b的另一端全部没有固定而为自由端。虽然在图1和图2中因为比例尺不同而看起来而不同,但除了上述的不同点以外,除了出于简略附图的观点而省略了树脂壳体2和焊线3之外,都相同。
图3是实验例1~3的本发明的电力用半导体模块的剖视图。图3以与图1的剖面示意图不同的尺寸比率进行了绘图,但是表示相同的本发明的电力用半导体模块的结构的剖视图。在图3的电力用半导体模块中,特征在于,翅片的一部分的另一端接合于水套11,形成加强翅片10c。
表1的实验例1~3和比较实验例4中,从绝缘布线基板1的端部到加强翅片10c为止的距离B分别不同。实验例1~3是能够更良好地得到本发明的效果的实验例。实验例1~3的加强翅片10c的位置在绝缘布线基板1的下方,且上述距离B相对于绝缘布线基板1的一个边的长度A以比率B/A的百分率计为20%以下。
另一方面,在比较实验例4中,虽然加强翅片10c的位置在绝缘布线基板1的下方,但以比率B/A的百分率计为超过20%的50%。
表1的比较实验例1如图2所示,是所有翅片具有自由端的翅片10b,不具有加强翅片10c的例子。
另一方面,表1中的比较实验例2、3(未图示)的加强翅片10c的位置与实验例1~3和比较实验例4不同,是不设在绝缘布线基板1的下方的情况,是设置于从绝缘布线基板1的下方离开的位置的情况。在表1和图4中对从这样的绝缘布线基板1的端部起算的距离B和B/A的百分率标记负(-)符号而示出。
图4是以上述表1的值为基础绘图而成,是从绝缘布线基板1的端部到接合于水套11的加强翅片10c为止的距离与翘曲量和塑性变形幅度之间的关系图。图4的横轴是将绝缘布线基板1的一边的长度设为100%时,从绝缘布线基板1的端部到接合于水套11的加强翅片10c为止的距离的比率B/A(%)。并且,纵第一轴(左侧)以百分率(%)示出将针对所有翅片的另一端不接合于水套的结构的情况(比较实验例1)下的塑性变形幅度设为100%的情况下的塑性变形幅度的比率。纵第二轴(右侧)以百分率(%)示出将比较实验例1的翘曲量设为100%的情况下的翘曲量的比率。
对于各实验例1~3和比较实验例2~4,以□表示塑性变形幅度的比率,以■表示翘曲量的比率。
由图4可知,实验例1~3与比较实验例1(设为100%)相比,塑性变形幅度从84%减少到89%左右,翘曲量从39%减少到49%左右。
比较实验例4与比较实验例1相比翘曲量减少到66%,但塑性变形幅度基本相同为99%。
比较实验例2、3显示在横轴中距离B在0左侧的负(-)的位置。比较实验例2和3的塑性变形幅度相对于比较实验例1(100%)的比率为104%和101%,翘曲量为84%和71%,虽然翘曲量变得稍微变小,但塑性变形幅度几乎不变或反而稍微增大。
通过以上的说明,由图4可知,至加强翅片10c为止的距离在绝缘布线基板1的一边的长度的0%~20%的范围内,塑性变形幅度与比较实验例相比能够减少10%以上,并且翘曲量能够减少50%以上,可得到良好的结果。
应予说明,即使在比较实验例2、3、4中,与不设置加强翅片的比较实验例1相比,翘曲量也减少,某种程度上实现了本发明的效果。
应予说明,在实验例1~3和比较实验例2~4中,在靠近各绝缘布线基板1的对置的两侧边分别设置一对加强翅片10c。如此,在本发明中,优选靠近绝缘布线基板1的对置的两侧边设置一对加强翅片10c。
根据以上说明的实施例的电力用半导体模块,能够提供具备即使减薄接合于绝缘布线基板的下侧的散热基板,也能够缓和将绝缘布线基板和散热基板进行接合的焊料层中产生的应力集中,在焊料层中不易产生裂纹的翅片一体型直接水冷结构的电力用半导体模块。
Claims (5)
1.一种电力用半导体模块,其特征在于,具备:绝缘布线基板;搭载于该绝缘布线基板的一个主表面上的半导体元件;接合于该绝缘布线基板的另一个主表面的散热基板;一端固定于该散热基板的另一个主表面且另一端为自由端的多个翅片;以及用于收容该多个翅片且使冷却液在该翅片间流动的水套,
所述多个翅片中的至少一部分翅片的所述另一端接合于所述水套而形成加强翅片。
2.根据权利要求1所述的电力用半导体模块,其特征在于,
所述绝缘布线基板具备绝缘性薄板、接合于该绝缘性薄板的一个主表面的金属电路布线层以及接合于另一个主表面的金属层。
3.根据权利要求1或2所述的电力用半导体模块,其特征在于,
所述加强翅片包含在所述绝缘布线基板的下方,而且位于将所述绝缘布线基板的一个边的长度设为A、将从所述绝缘布线基板的端部到所述加强翅片为止的距离设为B时,以百分率计B/A的比率为20%以下的位置的翅片。
4.根据权利要求3所述的电力用半导体模块,其特征在于,
所述加强翅片包含在所述绝缘布线基板的下方,而且位于从所述绝缘性基板的相对的两侧边起算向内侧相隔所述距离B的位置的至少一对翅片。
5.根据权利要求1~4中任一项所述的电力用半导体模块,其特征在于,
所述加强翅片的所述另一端具备接合于所述水套的区域和自由端的区域。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-183694 | 2013-09-05 | ||
JP2013183694 | 2013-09-05 | ||
PCT/JP2014/070538 WO2015033724A1 (ja) | 2013-09-05 | 2014-08-05 | 電力用半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105051892A true CN105051892A (zh) | 2015-11-11 |
CN105051892B CN105051892B (zh) | 2018-06-15 |
Family
ID=52628207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480013718.2A Active CN105051892B (zh) | 2013-09-05 | 2014-08-05 | 电力用半导体模块 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9888611B2 (zh) |
JP (1) | JP6168152B2 (zh) |
CN (1) | CN105051892B (zh) |
DE (1) | DE112014000898T5 (zh) |
WO (1) | WO2015033724A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110828405A (zh) * | 2018-08-13 | 2020-02-21 | 富士电机株式会社 | 功率半导体模块以及车辆 |
CN112750600A (zh) * | 2020-12-29 | 2021-05-04 | 华进半导体封装先导技术研发中心有限公司 | 一种基于微流道的可调式电感及其制造方法 |
CN113644187A (zh) * | 2021-07-14 | 2021-11-12 | 深圳市定千亿电子有限公司 | 一种高可靠性的集成封装led芯片 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2016158020A1 (ja) * | 2015-04-01 | 2017-07-27 | 富士電機株式会社 | 半導体モジュール |
JP6469521B2 (ja) * | 2015-05-19 | 2019-02-13 | 昭和電工株式会社 | 液冷式冷却装置 |
JP6384406B2 (ja) * | 2015-06-18 | 2018-09-05 | 株式会社デンソー | 半導体装置 |
JP6534873B2 (ja) * | 2015-06-30 | 2019-06-26 | 昭和電工株式会社 | 液冷式冷却装置 |
US10265812B2 (en) | 2015-08-12 | 2019-04-23 | International Business Machines Corporation | Liquid-cooled, composite heat sink assemblies |
WO2017056666A1 (ja) * | 2015-09-28 | 2017-04-06 | 株式会社東芝 | 窒化珪素回路基板およびそれを用いた半導体モジュール |
WO2018146816A1 (ja) * | 2017-02-13 | 2018-08-16 | 新電元工業株式会社 | 電子機器 |
JP2019033624A (ja) * | 2017-08-09 | 2019-02-28 | 株式会社デンソー | 電力変換装置 |
JP6663899B2 (ja) * | 2017-11-29 | 2020-03-13 | 本田技研工業株式会社 | 冷却装置 |
JP7004746B2 (ja) * | 2018-01-15 | 2022-01-21 | 三菱電機株式会社 | ヒートシンク |
JP6570685B1 (ja) * | 2018-03-16 | 2019-09-04 | 三菱電機株式会社 | 電力用半導体装置及びその製造方法 |
JP7159617B2 (ja) | 2018-05-25 | 2022-10-25 | 富士電機株式会社 | 冷却装置、半導体モジュール、車両および製造方法 |
JP7195542B2 (ja) * | 2019-04-05 | 2022-12-26 | 富士電機株式会社 | 冷却器、半導体モジュール |
JP6997229B2 (ja) * | 2020-01-09 | 2022-01-17 | 株式会社フジクラ | コールドプレート |
JP7463825B2 (ja) | 2020-04-27 | 2024-04-09 | 富士電機株式会社 | 半導体モジュールおよび車両 |
FR3119949A1 (fr) * | 2021-02-16 | 2022-08-19 | Valeo Systèmes de Contrôle Moteur | Ensemble électronique avec circuit de refroidissement amélioré |
DE102022209698A1 (de) * | 2022-09-15 | 2024-03-21 | Robert Bosch Gesellschaft mit beschränkter Haftung | Fluiddurchströmbarer Kühler zum Kühlen eines Leistungsmoduls |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080237847A1 (en) * | 2007-03-30 | 2008-10-02 | Nichicon Corporation | Power semiconductor module, and power semiconductor device having the module mounted therein |
JP2010093020A (ja) * | 2008-10-07 | 2010-04-22 | Toyota Motor Corp | パワーモジュール用冷却装置 |
CN101794741A (zh) * | 2009-01-08 | 2010-08-04 | 丰田自动车株式会社 | 散热装置及功率模块 |
CN102714929A (zh) * | 2010-01-12 | 2012-10-03 | 日本轻金属株式会社 | 翅片一体型基板及翅片一体型基板的制造方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5504378A (en) * | 1994-06-10 | 1996-04-02 | Westinghouse Electric Corp. | Direct cooled switching module for electric vehicle propulsion system |
JPH09162335A (ja) * | 1995-12-11 | 1997-06-20 | Janome Sewing Mach Co Ltd | Lsi用ヒートシンク |
JP4600199B2 (ja) | 2005-07-29 | 2010-12-15 | 三菱マテリアル株式会社 | 冷却器及びパワーモジュール |
JP2007173301A (ja) | 2005-12-19 | 2007-07-05 | Sumitomo Electric Ind Ltd | 半導体素子冷却用放熱器、半導体装置、半導体素子冷却用放熱器の製造方法 |
JP2008270297A (ja) | 2007-04-16 | 2008-11-06 | Sumitomo Electric Ind Ltd | パワーユニットおよび放熱容器 |
JP5381561B2 (ja) * | 2008-11-28 | 2014-01-08 | 富士電機株式会社 | 半導体冷却装置 |
US20100170221A1 (en) * | 2009-01-08 | 2010-07-08 | Toyota Jidosha Kabushiki Kaisha | Turbo fan engine |
JP5120284B2 (ja) | 2009-02-04 | 2013-01-16 | 株式会社豊田自動織機 | 半導体装置 |
CN102549743B (zh) * | 2009-08-10 | 2014-12-24 | 富士电机株式会社 | 半导体模块和冷却单元 |
CN102415229B (zh) * | 2009-08-18 | 2015-02-25 | 松下电器产业株式会社 | 电子设备的冷却构造 |
JP5790039B2 (ja) * | 2010-07-23 | 2015-10-07 | 富士電機株式会社 | 半導体装置 |
JP5538653B2 (ja) * | 2011-01-20 | 2014-07-02 | 三菱電機株式会社 | ヒートシンクおよび当該ヒートシンクを備えた半導体装置 |
JP5692368B2 (ja) * | 2011-04-26 | 2015-04-01 | 富士電機株式会社 | 半導体モジュール用冷却器及び半導体モジュール |
US8963321B2 (en) * | 2011-09-12 | 2015-02-24 | Infineon Technologies Ag | Semiconductor device including cladded base plate |
US9293391B2 (en) * | 2011-10-12 | 2016-03-22 | Fuji Electric Co., Ltd. | Semiconductor module cooler and semiconductor module |
JP6060553B2 (ja) * | 2012-04-06 | 2017-01-18 | 株式会社豊田自動織機 | 半導体装置 |
JP5900610B2 (ja) * | 2012-04-16 | 2016-04-06 | 富士電機株式会社 | 半導体装置および半導体装置用冷却器 |
DE112013004552T8 (de) * | 2012-09-19 | 2015-07-30 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
TWI482244B (zh) * | 2012-11-19 | 2015-04-21 | Ind Tech Res Inst | 熱交換器以及半導體模組 |
JP6093186B2 (ja) * | 2013-01-11 | 2017-03-08 | 本田技研工業株式会社 | 半導体モジュール用冷却器 |
JP6164304B2 (ja) * | 2013-11-28 | 2017-07-19 | 富士電機株式会社 | 半導体モジュール用冷却器の製造方法、半導体モジュール用冷却器、半導体モジュール及び電気駆動車両 |
EP3032580B1 (en) * | 2014-03-14 | 2018-06-20 | Fuji Electric Co., Ltd. | Cooling device and semiconductor device having said cooling device |
WO2016031462A1 (ja) * | 2014-08-28 | 2016-03-03 | 富士電機株式会社 | パワー半導体モジュール |
WO2016203885A1 (ja) * | 2015-06-17 | 2016-12-22 | 富士電機株式会社 | パワー半導体モジュール及び冷却器 |
-
2014
- 2014-08-05 WO PCT/JP2014/070538 patent/WO2015033724A1/ja active Application Filing
- 2014-08-05 DE DE112014000898.2T patent/DE112014000898T5/de active Pending
- 2014-08-05 JP JP2015535392A patent/JP6168152B2/ja active Active
- 2014-08-05 CN CN201480013718.2A patent/CN105051892B/zh active Active
-
2015
- 2015-09-11 US US14/851,868 patent/US9888611B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080237847A1 (en) * | 2007-03-30 | 2008-10-02 | Nichicon Corporation | Power semiconductor module, and power semiconductor device having the module mounted therein |
JP2010093020A (ja) * | 2008-10-07 | 2010-04-22 | Toyota Motor Corp | パワーモジュール用冷却装置 |
CN101794741A (zh) * | 2009-01-08 | 2010-08-04 | 丰田自动车株式会社 | 散热装置及功率模块 |
CN102714929A (zh) * | 2010-01-12 | 2012-10-03 | 日本轻金属株式会社 | 翅片一体型基板及翅片一体型基板的制造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110828405A (zh) * | 2018-08-13 | 2020-02-21 | 富士电机株式会社 | 功率半导体模块以及车辆 |
CN112750600A (zh) * | 2020-12-29 | 2021-05-04 | 华进半导体封装先导技术研发中心有限公司 | 一种基于微流道的可调式电感及其制造方法 |
CN112750600B (zh) * | 2020-12-29 | 2022-05-17 | 华进半导体封装先导技术研发中心有限公司 | 一种基于微流道的可调式电感及其制造方法 |
CN113644187A (zh) * | 2021-07-14 | 2021-11-12 | 深圳市定千亿电子有限公司 | 一种高可靠性的集成封装led芯片 |
Also Published As
Publication number | Publication date |
---|---|
DE112014000898T5 (de) | 2015-11-26 |
CN105051892B (zh) | 2018-06-15 |
JP6168152B2 (ja) | 2017-07-26 |
JPWO2015033724A1 (ja) | 2017-03-02 |
WO2015033724A1 (ja) | 2015-03-12 |
US20150382506A1 (en) | 2015-12-31 |
US9888611B2 (en) | 2018-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105051892A (zh) | 电力用半导体模块 | |
JP5588956B2 (ja) | パワー半導体装置 | |
US10304756B2 (en) | Power semiconductor module and cooler | |
JP6237912B2 (ja) | パワー半導体モジュール | |
US7470939B2 (en) | Semiconductor device | |
US7813135B2 (en) | Semiconductor device | |
US10319665B2 (en) | Cooler and cooler fixing method | |
US20160129792A1 (en) | Method for manufacturing cooler for semiconductor-module, cooler for semiconductor-module, semiconductor-module and electrically-driven vehicle | |
CN104247009A (zh) | 半导体装置以及半导体装置的制造方法 | |
EP2793260A1 (en) | Semiconductor device | |
EP3343603B1 (en) | Structure | |
JP3646665B2 (ja) | インバータ装置 | |
CN110047807B (zh) | 半导体装置 | |
US9478477B2 (en) | Semiconductor device | |
US20150130042A1 (en) | Semiconductor module with radiation fins | |
CN114446643B (zh) | 功率转换装置 | |
JP4935783B2 (ja) | 半導体装置および複合半導体装置 | |
CN112106194A (zh) | 用于半导体功率模块的排热组件 | |
US20230282549A1 (en) | Power module for vehicle and method of manufacturing the same | |
JP2005150419A (ja) | 半導体装置 | |
CN116235300A (zh) | 半导体装置以及车辆 | |
CN111954437A (zh) | 用于功率控制的电子模块 | |
JP2020009868A (ja) | 半導体モジュール | |
CN116783707A (zh) | 功率半导体器件 | |
JP2020102595A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |