CN105027439B - 带有低等待时间升压电路的电压电平移位器 - Google Patents

带有低等待时间升压电路的电压电平移位器 Download PDF

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Publication number
CN105027439B
CN105027439B CN201480012224.2A CN201480012224A CN105027439B CN 105027439 B CN105027439 B CN 105027439B CN 201480012224 A CN201480012224 A CN 201480012224A CN 105027439 B CN105027439 B CN 105027439B
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China
Prior art keywords
voltage level
circuit
coupled
level
input
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CN201480012224.2A
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English (en)
Chinese (zh)
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CN105027439A (zh
Inventor
O·拉加
W·郑
D·J·阿拉迪
Y·郭
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/156—Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
    • H03K5/1565—Arrangements in which a continuous pulse train is transformed into a train having a desired pattern the output pulses having a constant duty cycle
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/35613—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit the input circuit having a differential configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L5/00—Automatic control of voltage, current, or power

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
CN201480012224.2A 2013-03-06 2014-03-04 带有低等待时间升压电路的电压电平移位器 Active CN105027439B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/787,590 2013-03-06
US13/787,590 US9306553B2 (en) 2013-03-06 2013-03-06 Voltage level shifter with a low-latency voltage boost circuit
PCT/US2014/020238 WO2014138033A1 (en) 2013-03-06 2014-03-04 Voltage level shifter with a low-latency voltage boost circuit

Publications (2)

Publication Number Publication Date
CN105027439A CN105027439A (zh) 2015-11-04
CN105027439B true CN105027439B (zh) 2017-10-24

Family

ID=50336567

Family Applications (1)

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CN201480012224.2A Active CN105027439B (zh) 2013-03-06 2014-03-04 带有低等待时间升压电路的电压电平移位器

Country Status (6)

Country Link
US (1) US9306553B2 (enExample)
EP (1) EP2965425B1 (enExample)
JP (2) JP6517157B2 (enExample)
KR (1) KR102122304B1 (enExample)
CN (1) CN105027439B (enExample)
WO (1) WO2014138033A1 (enExample)

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* Cited by examiner, † Cited by third party
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US9473120B1 (en) 2015-05-18 2016-10-18 Qualcomm Incorporated High-speed AC-coupled inverter-based buffer with replica biasing
JP6820480B2 (ja) * 2015-12-08 2021-01-27 株式会社ソシオネクスト 出力回路
CN106067804B (zh) * 2016-08-04 2023-04-07 成都博思微科技有限公司 一种时钟信号的电平位移幅度控制电路
TWI723470B (zh) * 2018-07-31 2021-04-01 台灣積體電路製造股份有限公司 驅動電路、積體電路、及操作驅動電路的方法
KR102594977B1 (ko) * 2019-04-09 2023-10-30 에스케이하이닉스 주식회사 신호전달회로 및 이를 포함하는 반도체 장치
JP7379660B2 (ja) * 2019-08-09 2023-11-14 シリコン ストーリッジ テクノロージー インコーポレイテッド 集積回路のための改善されたレベルシフタ
KR102244707B1 (ko) * 2019-09-20 2021-04-27 고려대학교 산학협력단 조건부 스위칭 신호를 위한 주기적인 리프레시 동작을 수행하는 용량성 결합 레벨 시프터 및 그 동작 방법
CN112865778B (zh) * 2019-11-28 2025-07-25 硅存储技术股份有限公司 用于集成电路的低电压电平移位器
CN111106822B (zh) * 2019-12-03 2023-12-12 上海集成电路研发中心有限公司 一种电源上电模块
CN114679167B (zh) * 2022-04-12 2023-05-05 电子科技大学 一种高速无静态功耗的电平位移电路
US20250141451A1 (en) * 2023-10-27 2025-05-01 STMicroelectronics International N. V. Level shifting circuit

Citations (4)

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Publication number Priority date Publication date Assignee Title
US20010001230A1 (en) * 1996-07-29 2001-05-17 Proebsting Robert J. Apparatus for translating a voltage
JP2007311906A (ja) * 2006-05-16 2007-11-29 Asahi Kasei Electronics Co Ltd クロック昇圧回路
CN102394629A (zh) * 2000-01-27 2012-03-28 瑞萨电子株式会社 半导体器件
US20130043933A1 (en) * 2008-04-14 2013-02-21 Sang-Jin Byeon Internal voltage generator and semiconductor memory device including the same

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JPH09148913A (ja) * 1995-11-21 1997-06-06 Seiko Epson Corp 高電位差レベルシフト回路
TW362277B (en) * 1996-07-29 1999-06-21 Hynix Semiconductor Inc Charge pump for a semiconductor substrate
JP2880493B2 (ja) * 1997-02-03 1999-04-12 松下電器産業株式会社 チャージポンプ回路および論理回路
IT1304060B1 (it) 1998-12-29 2001-03-07 St Microelectronics Srl Variatore di livello per circuiteria a tensione d'alimentazionemultipla
JP4432197B2 (ja) * 2000-03-24 2010-03-17 セイコーエプソン株式会社 多段レベルシフト回路およびそれを用いた半導体装置
CN1233093C (zh) 2002-02-20 2005-12-21 松下电器产业株式会社 驱动电路
US20040104756A1 (en) 2002-12-03 2004-06-03 Payne James E. Voltage level shifter circuit having high speed and low switching power
US6894537B1 (en) 2002-12-18 2005-05-17 National Semiconductor Corporation Apparatus and method for level shifting in power-on reset circuitry in dual power supply domains
US7268588B2 (en) 2005-06-29 2007-09-11 Freescale Semiconductor, Inc. Cascadable level shifter cell
US7304530B2 (en) 2005-06-30 2007-12-04 Silicon Laboratories Inc. Utilization of device types having different threshold voltages
KR100711516B1 (ko) * 2006-02-14 2007-04-27 한양대학교 산학협력단 저전력 및 소면적의 용량 결합형 레벨 시프트 회로
KR101230313B1 (ko) * 2006-07-05 2013-02-06 재단법인서울대학교산학협력재단 레벨 시프터 및 그의 구동 방법
US7777547B2 (en) 2007-11-22 2010-08-17 Mediatek Inc. Level shifter for high-speed and low-leakage operation
US7800426B2 (en) 2008-03-27 2010-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Two voltage input level shifter with switches for core power off application
SG169941A1 (en) * 2009-09-11 2011-04-29 Agency Science Tech & Res Circuit arrangement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010001230A1 (en) * 1996-07-29 2001-05-17 Proebsting Robert J. Apparatus for translating a voltage
CN102394629A (zh) * 2000-01-27 2012-03-28 瑞萨电子株式会社 半导体器件
JP2007311906A (ja) * 2006-05-16 2007-11-29 Asahi Kasei Electronics Co Ltd クロック昇圧回路
US20130043933A1 (en) * 2008-04-14 2013-02-21 Sang-Jin Byeon Internal voltage generator and semiconductor memory device including the same

Also Published As

Publication number Publication date
JP6517157B2 (ja) 2019-05-22
US9306553B2 (en) 2016-04-05
KR20150123929A (ko) 2015-11-04
CN105027439A (zh) 2015-11-04
EP2965425A1 (en) 2016-01-13
JP2019097179A (ja) 2019-06-20
EP2965425B1 (en) 2019-10-23
JP2016513914A (ja) 2016-05-16
US20140253210A1 (en) 2014-09-11
WO2014138033A1 (en) 2014-09-12
KR102122304B1 (ko) 2020-06-12

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