KR102122304B1 - 낮은-레이턴시 전압 부스트 회로를 갖는 전압 레벨 시프터 - Google Patents

낮은-레이턴시 전압 부스트 회로를 갖는 전압 레벨 시프터 Download PDF

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KR102122304B1
KR102122304B1 KR1020157027360A KR20157027360A KR102122304B1 KR 102122304 B1 KR102122304 B1 KR 102122304B1 KR 1020157027360 A KR1020157027360 A KR 1020157027360A KR 20157027360 A KR20157027360 A KR 20157027360A KR 102122304 B1 KR102122304 B1 KR 102122304B1
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South Korea
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voltage level
voltage
level
input signal
circuit
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KR20150123929A (ko
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오미드 라자에
웨이 쳉
디네쉬 자가나쓰 알라디
유후아 구오
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퀄컴 인코포레이티드
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/156—Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
    • H03K5/1565—Arrangements in which a continuous pulse train is transformed into a train having a desired pattern the output pulses having a constant duty cycle
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/35613—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit the input circuit having a differential configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L5/00—Automatic control of voltage, current, or power

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
KR1020157027360A 2013-03-06 2014-03-04 낮은-레이턴시 전압 부스트 회로를 갖는 전압 레벨 시프터 Active KR102122304B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/787,590 2013-03-06
US13/787,590 US9306553B2 (en) 2013-03-06 2013-03-06 Voltage level shifter with a low-latency voltage boost circuit
PCT/US2014/020238 WO2014138033A1 (en) 2013-03-06 2014-03-04 Voltage level shifter with a low-latency voltage boost circuit

Publications (2)

Publication Number Publication Date
KR20150123929A KR20150123929A (ko) 2015-11-04
KR102122304B1 true KR102122304B1 (ko) 2020-06-12

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KR1020157027360A Active KR102122304B1 (ko) 2013-03-06 2014-03-04 낮은-레이턴시 전압 부스트 회로를 갖는 전압 레벨 시프터

Country Status (6)

Country Link
US (1) US9306553B2 (enExample)
EP (1) EP2965425B1 (enExample)
JP (2) JP6517157B2 (enExample)
KR (1) KR102122304B1 (enExample)
CN (1) CN105027439B (enExample)
WO (1) WO2014138033A1 (enExample)

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* Cited by examiner, † Cited by third party
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RU2787930C1 (ru) * 2022-04-21 2023-01-13 Владимир Владимирович Шубин Элемент входного регистра

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US9473120B1 (en) 2015-05-18 2016-10-18 Qualcomm Incorporated High-speed AC-coupled inverter-based buffer with replica biasing
JP6820480B2 (ja) * 2015-12-08 2021-01-27 株式会社ソシオネクスト 出力回路
CN106067804B (zh) * 2016-08-04 2023-04-07 成都博思微科技有限公司 一种时钟信号的电平位移幅度控制电路
TWI723470B (zh) * 2018-07-31 2021-04-01 台灣積體電路製造股份有限公司 驅動電路、積體電路、及操作驅動電路的方法
KR102594977B1 (ko) * 2019-04-09 2023-10-30 에스케이하이닉스 주식회사 신호전달회로 및 이를 포함하는 반도체 장치
JP7379660B2 (ja) * 2019-08-09 2023-11-14 シリコン ストーリッジ テクノロージー インコーポレイテッド 集積回路のための改善されたレベルシフタ
KR102244707B1 (ko) * 2019-09-20 2021-04-27 고려대학교 산학협력단 조건부 스위칭 신호를 위한 주기적인 리프레시 동작을 수행하는 용량성 결합 레벨 시프터 및 그 동작 방법
CN112865778B (zh) * 2019-11-28 2025-07-25 硅存储技术股份有限公司 用于集成电路的低电压电平移位器
CN111106822B (zh) * 2019-12-03 2023-12-12 上海集成电路研发中心有限公司 一种电源上电模块
CN114679167B (zh) * 2022-04-12 2023-05-05 电子科技大学 一种高速无静态功耗的电平位移电路
US20250141451A1 (en) * 2023-10-27 2025-05-01 STMicroelectronics International N. V. Level shifting circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020180508A1 (en) 2000-01-27 2002-12-05 Yusuke Kanno Semiconductor device

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JPH09148913A (ja) * 1995-11-21 1997-06-06 Seiko Epson Corp 高電位差レベルシフト回路
US6064250A (en) * 1996-07-29 2000-05-16 Townsend And Townsend And Crew Llp Various embodiments for a low power adaptive charge pump circuit
TW362277B (en) * 1996-07-29 1999-06-21 Hynix Semiconductor Inc Charge pump for a semiconductor substrate
JP2880493B2 (ja) * 1997-02-03 1999-04-12 松下電器産業株式会社 チャージポンプ回路および論理回路
IT1304060B1 (it) 1998-12-29 2001-03-07 St Microelectronics Srl Variatore di livello per circuiteria a tensione d'alimentazionemultipla
JP4432197B2 (ja) * 2000-03-24 2010-03-17 セイコーエプソン株式会社 多段レベルシフト回路およびそれを用いた半導体装置
CN1233093C (zh) 2002-02-20 2005-12-21 松下电器产业株式会社 驱动电路
US20040104756A1 (en) 2002-12-03 2004-06-03 Payne James E. Voltage level shifter circuit having high speed and low switching power
US6894537B1 (en) 2002-12-18 2005-05-17 National Semiconductor Corporation Apparatus and method for level shifting in power-on reset circuitry in dual power supply domains
US7268588B2 (en) 2005-06-29 2007-09-11 Freescale Semiconductor, Inc. Cascadable level shifter cell
US7304530B2 (en) 2005-06-30 2007-12-04 Silicon Laboratories Inc. Utilization of device types having different threshold voltages
KR100711516B1 (ko) * 2006-02-14 2007-04-27 한양대학교 산학협력단 저전력 및 소면적의 용량 결합형 레벨 시프트 회로
JP4787671B2 (ja) 2006-05-16 2011-10-05 旭化成エレクトロニクス株式会社 クロック昇圧回路
KR101230313B1 (ko) * 2006-07-05 2013-02-06 재단법인서울대학교산학협력재단 레벨 시프터 및 그의 구동 방법
US7777547B2 (en) 2007-11-22 2010-08-17 Mediatek Inc. Level shifter for high-speed and low-leakage operation
US7800426B2 (en) 2008-03-27 2010-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Two voltage input level shifter with switches for core power off application
KR100911866B1 (ko) * 2008-04-14 2009-08-11 주식회사 하이닉스반도체 내부전압 생성회로를 포함하는 반도체 메모리장치
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Publication number Priority date Publication date Assignee Title
US20020180508A1 (en) 2000-01-27 2002-12-05 Yusuke Kanno Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2787930C1 (ru) * 2022-04-21 2023-01-13 Владимир Владимирович Шубин Элемент входного регистра
RU2836436C1 (ru) * 2024-07-09 2025-03-17 Владимир Владимирович Шубин Входной регистровый элемент

Also Published As

Publication number Publication date
JP6517157B2 (ja) 2019-05-22
US9306553B2 (en) 2016-04-05
CN105027439B (zh) 2017-10-24
KR20150123929A (ko) 2015-11-04
CN105027439A (zh) 2015-11-04
EP2965425A1 (en) 2016-01-13
JP2019097179A (ja) 2019-06-20
EP2965425B1 (en) 2019-10-23
JP2016513914A (ja) 2016-05-16
US20140253210A1 (en) 2014-09-11
WO2014138033A1 (en) 2014-09-12

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