CN104979179B - 半导体装置以及半导体装置的制造方法 - Google Patents

半导体装置以及半导体装置的制造方法 Download PDF

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Publication number
CN104979179B
CN104979179B CN201510160872.9A CN201510160872A CN104979179B CN 104979179 B CN104979179 B CN 104979179B CN 201510160872 A CN201510160872 A CN 201510160872A CN 104979179 B CN104979179 B CN 104979179B
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China
Prior art keywords
electrode film
semiconductor device
type silicon
layer
silicon substrate
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CN201510160872.9A
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Chinese (zh)
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CN104979179A (zh
Inventor
加地考男
多留谷政良
吉浦康博
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals

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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201510160872.9A 2014-04-10 2015-04-07 半导体装置以及半导体装置的制造方法 Active CN104979179B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-081239 2014-04-10
JP2014081239A JP2015204301A (ja) 2014-04-10 2014-04-10 半導体装置および半導体装置の製造方法

Publications (2)

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CN104979179A CN104979179A (zh) 2015-10-14
CN104979179B true CN104979179B (zh) 2018-03-16

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US (1) US9755037B2 (https=)
JP (1) JP2015204301A (https=)
CN (1) CN104979179B (https=)
DE (1) DE102015202123B4 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017103404A (ja) * 2015-12-04 2017-06-08 シャープ株式会社 半導体装置およびその製造方法
DE112017000426B4 (de) * 2016-01-19 2024-12-12 Mitsubishi Electric Corporation Leistungshalbleitervorrichtung und verfahren zum herstellen einer leistungshalbleitervorrichtung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005474A (zh) * 2009-08-27 2011-04-06 三菱电机株式会社 半导体装置及其制造方法

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JPS55165673A (en) * 1979-06-12 1980-12-24 Fujitsu Ltd Semiconductor device
JPS6439775A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Formation of electrode film of semiconductor device
JPH03183126A (ja) * 1989-12-13 1991-08-09 Kawasaki Steel Corp 半導体装置の製造方法
DE69223868T2 (de) 1991-07-17 1998-09-03 Denso Corp Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements
JP3127494B2 (ja) * 1991-07-17 2001-01-22 株式会社デンソー 半導体装置の電極形成方法
JPH0864799A (ja) * 1994-08-18 1996-03-08 Toshiba Corp 半導体チップおよびそれを用いた半導体装置の製造方法
DE19734434C1 (de) * 1997-08-08 1998-12-10 Siemens Ag Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung
JPH11274102A (ja) * 1998-03-25 1999-10-08 Matsushita Electron Corp 半導体装置の製造方法及びその製造装置
JP3703435B2 (ja) * 2002-02-05 2005-10-05 三菱電機株式会社 半導体装置
US8575474B2 (en) * 2006-03-20 2013-11-05 Heracus Precious Metals North America Conshohocken LLC Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper
JP4221012B2 (ja) 2006-06-12 2009-02-12 トヨタ自動車株式会社 半導体装置とその製造方法
JP4967472B2 (ja) * 2006-06-22 2012-07-04 富士電機株式会社 半導体装置
JP5381420B2 (ja) * 2008-07-22 2014-01-08 富士電機株式会社 半導体装置
JP2010129585A (ja) 2008-11-25 2010-06-10 Toyota Motor Corp 半導体装置の製造方法
JPWO2010109572A1 (ja) * 2009-03-23 2012-09-20 トヨタ自動車株式会社 半導体装置
JP4970530B2 (ja) * 2009-12-28 2012-07-11 株式会社ノリタケカンパニーリミテド 太陽電池用ペースト組成物およびその製造方法ならびに太陽電池
JP5585379B2 (ja) * 2010-10-21 2014-09-10 富士電機株式会社 半導体装置の製造方法およびその製造装置
JP5669780B2 (ja) * 2012-03-21 2015-02-18 三菱電機株式会社 半導体装置の製造方法
JP5925103B2 (ja) 2012-10-15 2016-05-25 株式会社デンソーアイティーラボラトリ 経路探索装置、ナビゲーション装置、経路探索方法、経路探索プログラム、及びナビゲーションプログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005474A (zh) * 2009-08-27 2011-04-06 三菱电机株式会社 半导体装置及其制造方法

Also Published As

Publication number Publication date
JP2015204301A (ja) 2015-11-16
CN104979179A (zh) 2015-10-14
DE102015202123B4 (de) 2024-12-05
US20150294871A1 (en) 2015-10-15
US9755037B2 (en) 2017-09-05
DE102015202123A1 (de) 2015-10-15

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