CN106663612B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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CN106663612B
CN106663612B CN201480080968.8A CN201480080968A CN106663612B CN 106663612 B CN106663612 B CN 106663612B CN 201480080968 A CN201480080968 A CN 201480080968A CN 106663612 B CN106663612 B CN 106663612B
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久野美里
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Mitsubishi Electric Corp
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Abstract

在Si衬底(1)的背面注入n型杂质而形成n型层(3)。在Si衬底(1)的背面形成有凹部(4)。在形成了n型层(3)之后，在背面之上和凹部(4)内形成氧化膜(5)。留下凹部(4)内的保护膜并将背面之上的氧化膜(5)去除。在将氧化膜(5)去除之后，在背面之上形成Al‑Si膜(6)。在Al‑Si膜(6)之上形成金属电极(7)。接着，与对比例进行比较而说明本实施方式的效果。凹部(4)内的氧化膜(5)防止Al从Al‑Si膜(6)经由凹部(4)扩散至Si衬底(1)。

Description

半导体装置的制造方法
技术领域
本发明涉及在Si衬底的背面形成金属电极的半导体装置的制造方法。
背景技术
就用于驱动大电流的电力用半导体装置而言，在Si衬底的背面形成金属电极(例如，参照专利文献1)。为了抑制Si衬底与金属电极的剥离而在两者之间形成Al-Si膜。
专利文献1：日本特开2006-074024号公报
发明内容
由于晶片制造时的机械应力而在Si衬底的背面形成凹部。Al经由该凹部从Al-Si膜扩散至Si衬底而形成p型层。由于耗尽层到达至该p型层，因此存在产生泄漏电流、器件的耐压劣化的问题。
本发明就是为了解决如上述的问题而提出的，其目的是得到一种即使在Si衬底的背面存在凹部也能够抑制泄漏电流和耐压劣化的半导体装置的制造方法。
本发明涉及的半导体装置的特征在于，具有下述工序：针对具有形成有凹部的背面的Si衬底，在所述Si衬底的所述背面注入n型杂质而形成n型层；在形成了所述n型层之后，在所述背面之上和所述凹部内形成保护膜；留下所述凹部内的所述保护膜并将所述背面之上的所述保护膜去除；在将所述保护膜去除之后，在所述背面之上形成Al-Si膜；以及在所述Al-Si膜之上形成金属电极，所述凹部内的所述保护膜防止Al从所述Al-Si膜经由所述凹部扩散至所述Si衬底。
发明的效果
在本发明中，凹部内的保护膜防止Al从Al-Si膜经由凹部扩散至Si衬底。因此，即使在Si衬底的背面存在凹部，也能够抑制泄漏电流和耐压劣化。
附图说明
图1是表示本发明的实施方式1涉及的半导体装置的制造方法的剖面图。
图2是表示本发明的实施方式1涉及的半导体装置的制造方法的剖面图。
图3是表示本发明的实施方式1涉及的半导体装置的制造方法的剖面图。
图4是表示本发明的实施方式1涉及的半导体装置的制造方法的剖面图。
图5是表示对比例涉及的半导体装置的制造方法的剖面图。
图6是表示本发明的实施方式2涉及的半导体装置的制造方法的剖面图。
图7是表示本发明的实施方式3涉及的半导体装置的制造方法的剖面图。
图8是表示本发明的实施方式4涉及的半导体装置的制造方法的剖面图。
图9是表示本发明的实施方式5涉及的半导体装置的制造方法的剖面图。
图10是表示本发明的实施方式6涉及的半导体装置的制造方法的剖面图。
图11是表示本发明的实施方式6涉及的半导体装置的制造方法的剖面图。
图12是表示本发明的实施方式6涉及的半导体装置的制造方法的变形例的剖面图。
具体实施方式
参照附图对本发明的实施方式涉及的半导体装置的制造方法进行说明。针对相同或者对应的结构要素标注相同的标号，有时省略重复说明。
实施方式1.
参照附图对本发明的实施方式1涉及的半导体装置的制造方法进行说明。图1～4是表示本发明的实施方式1涉及的半导体装置的制造方法的剖面图。
首先，如图1所示，在n-型的Si衬底1的表面注入p型杂质而形成p型层2，在背面注入n型杂质而形成n型层3。在Si衬底1的背面形成有凹部4(损伤)。然后，如图2所示，在背面之上和凹部4内形成氧化膜5。然后，如图3所示，通过溅射蚀刻，留下凹部4内的氧化膜5并将背面之上的氧化膜5去除。这里，氧化膜5至少需要保留在凹部4的最深部。然后，如图4所示，在背面之上形成Al-Si膜6。然后，在Al-Si膜6之上形成金属电极7。此外，金属电极7为多层电极。
接着，与对比例进行比较而说明本实施方式的效果。图5是表示对比例涉及的半导体装置的制造方法的剖面图。在对比例中，在凹部4的最深部，Al-Si膜6直接与Si衬底1接触。因此，在对器件施加了反方向的电压时，Al从Al-Si膜6经由凹部4扩散至Si衬底1而形成p型层。由于耗尽层到达至该p型层，因此产生泄漏电流，器件的耐压劣化。
另一方面，在本实施方式中，凹部4内的氧化膜5作为防止Al从Al-Si膜6经由凹部4扩散至Si衬底1的保护膜而起作用。因此，即使在Si衬底1的背面存在凹部4，也能够抑制泄漏电流和耐压劣化。另外，能够利用Al-Si膜6抑制Si衬底1与金属电极7的剥离。
实施方式2.
图6是表示本发明的实施方式2涉及的半导体装置的制造方法的剖面图。在本实施方式中，取代实施方式1的氧化膜5而形成n型掺杂多晶硅8作为保护膜。在该情况下，凹部4内的n型掺杂多晶硅8防止Al从Al-Si膜6经由凹部4扩散至Si衬底1，因此能够得到与实施方式1相同的效果。另外，由于n型掺杂多晶硅8为n型，因此相对于将Si衬底1激活为p型的Al而存在余量，在凹部4也能够通电。
实施方式3.
图7是表示本发明的实施方式3涉及的半导体装置的制造方法的剖面图。在本实施方式中，取代实施方式1的氧化膜5而形成磷化氧化膜玻璃9作为保护膜。在该情况下也能够得到与实施方式1相同的效果。另外，由于磷化氧化膜玻璃9为n型，因此与实施方式2相同地，相对于将Si衬底1激活为p型的Al而存在余量，在凹部4也能够通电。
实施方式4.
图8是表示本发明的实施方式4涉及的半导体装置的制造方法的剖面图。在本实施方式中，取代实施方式1的氧化膜5而形成未硅化物化的单体金属10(钛)作为保护膜。凹部4内的单体金属10作为防止Al扩散的阻挡金属而起作用，因此能够得到与实施方式1相同的效果。另外，单体金属10相对于n型的欧姆特性优异。
实施方式5
图9是表示本发明的实施方式5涉及的半导体装置的制造方法的剖面图。在本实施方式中，在形成了n型层3之后，在背面之上和凹部4内形成金属膜(钛、钴、钨、钼)。随后，通过实施退火而形成金属硅化物11(硅化钛、硅化钴、硅化钨、硅化钼)。然后，通过溅射蚀刻，留下凹部4内的金属硅化物11并将背面之上的金属硅化物11去除。随后，与实施方式1相同地形成Al-Si膜6和金属电极7。
凹部4内的金属硅化物11作为防止Al从Al-Si膜6经由凹部4扩散至Si衬底1的保护膜而起作用，因此能够得到与实施方式1相同的效果。另外，金属硅化物11与单体金属10相比相对于n型的n型层3的欧姆特性更优异，并作为防止Al扩散的阻挡金属而起作用。
实施方式6
图10、11是表示本发明的实施方式6涉及的半导体装置的制造方法的剖面图。首先，与实施方式1的图1相同地，在n-型的Si衬底1的表面注入p型杂质而形成p型层2，在背面注入n型杂质而形成n型层3。在Si衬底1的背面形成有凹部4。然后，如图10所示，对背面实施激光退火而在留有凹部4的状态下使背面重新晶化，再次形成n型层3。然后，如图11所示，在背面之上形成Al-Si膜6。在Al-Si膜6之上形成金属电极7。
由此，能够防止Al从Al-Si膜6经由凹部4扩散至Si衬底1，因此能够得到与实施方式1相同的效果。另外，由于能够再次形成n型层3，因此能够抑制特性变化。另外，在利用激光照射使背面熔融而将凹部4消除的方法下，处理时间变长，但在本实施方式中，由于能够通过留下凹部4而缩短激光退火的处理时间，因此能够降低成本。
图12是表示本发明的实施方式6涉及的半导体装置的制造方法的变形例的剖面图。仅在凹部4选择性地进行激光退火。由此，能够使凹部4附近重新晶化，因此能够得到实施方式6的效果。另外，由于能够通过选择性地实施激光退火而进一步缩短激光退火的处理时间，因此能够降低成本。
标号的说明
1Si衬底，3n型层，4凹部，5氧化膜，6Al-Si膜，7金属电极，8n型掺杂多晶硅，9磷化氧化膜玻璃，10单体金属，11金属硅化物。

Claims (7)

1.一种半导体装置的制造方法，其具有在Al-Si膜之上形成金属电极的工序，
该半导体装置的制造方法的特征在于，具有下述工序：
针对具有形成有凹部的背面的Si衬底，在所述Si衬底的所述背面注入n型杂质而形成n型层；
在形成了所述n型层之后，在所述背面之上和所述凹部内形成保护膜；
留下所述凹部内的所述保护膜并将所述背面之上的所述保护膜去除；以及
在将所述保护膜去除之后，在所述背面之上形成所述Al-Si膜；
所述凹部内的所述保护膜防止Al从所述Al-Si膜经由所述凹部扩散至所述Si衬底。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，
所述保护膜为氧化膜。
3.根据权利要求1所述的半导体装置的制造方法，其特征在于，
所述保护膜为n型掺杂多晶硅或者磷化氧化膜玻璃。
4.根据权利要求1所述的半导体装置的制造方法，其特征在于，
所述保护膜为单体金属。
5.根据权利要求1所述的半导体装置的制造方法，其特征在于，
所述保护膜为金属硅化物。
6.一种半导体装置的制造方法，其具有在Al-Si膜之上形成金属电极的工序，
该半导体装置的制造方法的特征在于，具有下述工序：
针对具有形成有凹部的背面的Si衬底，在所述Si衬底的所述背面注入n型杂质而形成n型层；
对所述背面实施激光退火而在留有所述凹部的状态下使所述背面重新晶化，再次形成所述n型层；以及
在所述激光退火之后，在所述背面之上形成所述Al-Si膜。
7.根据权利要求6所述的半导体装置的制造方法，其特征在于，
在所述凹部选择性地实施所述激光退火。
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