JP5700025B2 - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JP5700025B2 JP5700025B2 JP2012258740A JP2012258740A JP5700025B2 JP 5700025 B2 JP5700025 B2 JP 5700025B2 JP 2012258740 A JP2012258740 A JP 2012258740A JP 2012258740 A JP2012258740 A JP 2012258740A JP 5700025 B2 JP5700025 B2 JP 5700025B2
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- 239000004065 semiconductor Substances 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 34
- 229920005591 polysilicon Polymers 0.000 claims description 29
- 150000002500 ions Chemical class 0.000 claims description 19
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 description 30
- 238000005468 ion implantation Methods 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Description
100:半導体基板
101:コレクタ層
102:ドリフト層
103:バッファ層
104:ボディ層
105:エミッタ層
106:ボディ層
120:トレンチゲート
121:トレンチ
122:ゲート絶縁膜
123:ゲート電極
141:表面電極
142:裏面電極
500:半導体ウェハ
501:p層
502:n層
503:n層
553:ポリシリコン層
Claims (1)
- 第1導電型のドリフト層と、
ドリフト層の表面に接するとともにその一部が半導体基板の表面に露出する第2導電型のボディ層と、
ボディ層の表面の一部に設けられ、半導体基板の表面に露出し、ボディ層によってドリフト層と分離されている第1導電型のエミッタ層と、
ドリフト層の裏面に接する第1導電型のバッファ層と、
バッファ層の裏面に接するとともに半導体基板の裏面に露出する第2導電型のコレクタ層と、
エミッタ層とドリフト層を分離している範囲のボディ層に絶縁膜を介して対向しているゲート電極とを備えた半導体装置の製造方法であって、
単結晶シリコンを材料とする第1層と、第1層の裏面に積層され、ポリシリコンまたはアモルファスシリコンを材料とする第2層とを含む半導体ウェハを準備する工程と、
第2層に第1導電型のイオンを注入して拡散させて第2層にバッファ層を形成する工程と、
第2層にバッファ層を形成した後で、第2層に第2導電型のイオンを注入して第2層のバッファ層の裏面にコレクタ層を形成するとともに、第2層内にバッファ層を残存させる工程と、を含む、半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012258740A JP5700025B2 (ja) | 2012-11-27 | 2012-11-27 | 半導体装置とその製造方法 |
US14/086,301 US9530859B2 (en) | 2012-11-27 | 2013-11-21 | Semiconductor device and manufacturing method of same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012258740A JP5700025B2 (ja) | 2012-11-27 | 2012-11-27 | 半導体装置とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014107391A JP2014107391A (ja) | 2014-06-09 |
JP5700025B2 true JP5700025B2 (ja) | 2015-04-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012258740A Expired - Fee Related JP5700025B2 (ja) | 2012-11-27 | 2012-11-27 | 半導体装置とその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9530859B2 (ja) |
JP (1) | JP5700025B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108831832B (zh) * | 2018-05-07 | 2020-08-14 | 株洲中车时代电气股份有限公司 | 沟槽台阶栅igbt芯片的制作方法 |
JP7091204B2 (ja) * | 2018-09-19 | 2022-06-27 | 株式会社東芝 | 半導体装置 |
US11309411B2 (en) * | 2020-06-03 | 2022-04-19 | Db Hitek Co., Ltd. | Insulated gate bipolar transistor and method of manufacturing same |
CN116544272B (zh) * | 2023-07-06 | 2023-10-03 | 上海陆芯电子科技有限公司 | 一种逆导型igbt器件及其制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0291932A (ja) * | 1988-09-28 | 1990-03-30 | Fujitsu Ltd | 半導体装置の製造方法 |
DE69007446T2 (de) * | 1989-12-21 | 1994-09-29 | Philips Nv | Verfahren zur Herstellung einer Halbleiteranordnung mit einem NPN Bipolartransistor. |
JP3929557B2 (ja) * | 1997-07-30 | 2007-06-13 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP4590880B2 (ja) * | 2003-06-24 | 2010-12-01 | 富士電機システムズ株式会社 | 半導体素子の製造方法 |
DE102004030268B4 (de) | 2003-06-24 | 2013-02-21 | Fuji Electric Co., Ltd | Verfahren zum Herstellen eines Halbleiterelements |
JP5172189B2 (ja) | 2007-03-28 | 2013-03-27 | 株式会社ジャパンディスプレイセントラル | 薄膜半導体装置およびその製造方法 |
JP5668270B2 (ja) | 2008-12-11 | 2015-02-12 | 富士電機株式会社 | 半導体素子の製造方法 |
JP5671867B2 (ja) * | 2010-08-04 | 2015-02-18 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5445563B2 (ja) | 2011-11-21 | 2014-03-19 | 富士電機株式会社 | 半導体装置の製造方法 |
-
2012
- 2012-11-27 JP JP2012258740A patent/JP5700025B2/ja not_active Expired - Fee Related
-
2013
- 2013-11-21 US US14/086,301 patent/US9530859B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20140145239A1 (en) | 2014-05-29 |
US9530859B2 (en) | 2016-12-27 |
JP2014107391A (ja) | 2014-06-09 |
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