CN104900685B - 具有钝化层的半导体器件及用于制作其的方法 - Google Patents

具有钝化层的半导体器件及用于制作其的方法 Download PDF

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CN104900685B
CN104900685B CN201510099304.2A CN201510099304A CN104900685B CN 104900685 B CN104900685 B CN 104900685B CN 201510099304 A CN201510099304 A CN 201510099304A CN 104900685 B CN104900685 B CN 104900685B
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layer
region
semiconductor device
contact electrode
semiconductor
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CN104900685A (zh
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C.黑希特
A.卡巴科夫
J.P.康拉特
R.鲁普
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Infineon Technologies AG
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Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
CN201510099304.2A 2014-03-07 2015-03-06 具有钝化层的半导体器件及用于制作其的方法 Active CN104900685B (zh)

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US14/200732 2014-03-07
US14/200,732 US20150255362A1 (en) 2014-03-07 2014-03-07 Semiconductor Device with a Passivation Layer and Method for Producing Thereof

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DE102019100130B4 (de) * 2018-04-10 2021-11-04 Infineon Technologies Ag Ein halbleiterbauelement und ein verfahren zum bilden eines halbleiterbauelements
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US10957664B2 (en) * 2019-05-29 2021-03-23 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
JP7611155B2 (ja) 2019-09-30 2025-01-09 ローム株式会社 半導体装置
US20240404905A1 (en) * 2020-12-16 2024-12-05 Stmicroelectronics Pte Ltd Passivation layer for an integrated circuit device that provides a moisture and proton barrier
US20220189840A1 (en) * 2020-12-16 2022-06-16 Stmicroelectronics Pte Ltd Passivation layer for an integrated circuit device that provides a moisture and proton barrier
DE112022001137T5 (de) * 2021-03-26 2023-12-21 Rohm Co., Ltd. Halbleiterbauteil
CN113921588A (zh) * 2021-09-01 2022-01-11 格力电器（合肥）有限公司 半导体器件及其制备方法
JPWO2023067925A1 (https=) * 2021-10-21 2023-04-27
IT202100027101A1 (it) * 2021-10-21 2023-04-21 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo elettronico di carburo di silicio e dispositivo elettronico di carburo di silicio
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