CN104620097B - 检验晶片及/或预测形成于晶片上的装置的一或多个特性 - Google Patents

检验晶片及/或预测形成于晶片上的装置的一或多个特性 Download PDF

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Publication number
CN104620097B
CN104620097B CN201380047045.8A CN201380047045A CN104620097B CN 104620097 B CN104620097 B CN 104620097B CN 201380047045 A CN201380047045 A CN 201380047045A CN 104620097 B CN104620097 B CN 104620097B
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dies
printed
defects
error
wafer
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CN104620097A (zh
Inventor
G·马尔库奇利
A·威德曼
E·张
J·鲁滨逊
A·帕克
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
CN201380047045.8A 2012-08-01 2013-08-01 检验晶片及/或预测形成于晶片上的装置的一或多个特性 Active CN104620097B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261678576P 2012-08-01 2012-08-01
US61/678,576 2012-08-01
US13/783,291 US8948495B2 (en) 2012-08-01 2013-03-02 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer
US13/783,291 2013-03-02
PCT/US2013/053252 WO2014022682A1 (en) 2012-08-01 2013-08-01 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer

Publications (2)

Publication Number Publication Date
CN104620097A CN104620097A (zh) 2015-05-13
CN104620097B true CN104620097B (zh) 2017-08-29

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CN201380047045.8A Active CN104620097B (zh) 2012-08-01 2013-08-01 检验晶片及/或预测形成于晶片上的装置的一或多个特性

Country Status (8)

Country Link
US (1) US8948495B2 (https=)
EP (1) EP2880427A1 (https=)
JP (4) JP6282650B2 (https=)
KR (2) KR102129826B1 (https=)
CN (1) CN104620097B (https=)
IL (2) IL236957B (https=)
TW (1) TWI591326B (https=)
WO (1) WO2014022682A1 (https=)

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KR20190005955A (ko) 2016-05-12 2019-01-16 에이에스엠엘 네델란즈 비.브이. 측정치 획득 방법, 프로세스 단계 수행 장치, 계측 장치, 디바이스 제조 방법
US10902576B2 (en) * 2016-08-12 2021-01-26 Texas Instruments Incorporated System and method for electronic die inking after automatic visual defect inspection
US10679909B2 (en) * 2016-11-21 2020-06-09 Kla-Tencor Corporation System, method and non-transitory computer readable medium for tuning sensitivies of, and determining a process window for, a modulated wafer
US10761128B2 (en) * 2017-03-23 2020-09-01 Kla-Tencor Corporation Methods and systems for inline parts average testing and latent reliability defect detection
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CN111426701B (zh) * 2019-06-25 2024-01-30 合肥晶合集成电路股份有限公司 一种晶圆缺陷检测方法及其装置
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US12535314B2 (en) 2020-05-04 2026-01-27 Asml Netherlands B.V. System and method for generating level data for a surface of a substrate
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US12111355B2 (en) * 2021-11-22 2024-10-08 Onto Innovation Inc. Semiconductor substrate yield prediction based on spectra data from multiple substrate dies
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Publication number Publication date
KR102129826B1 (ko) 2020-07-06
IL255772A (en) 2018-01-31
EP2880427A1 (en) 2015-06-10
KR20150036789A (ko) 2015-04-07
TW201415008A (zh) 2014-04-16
IL236957B (en) 2018-07-31
KR102169564B1 (ko) 2020-10-26
WO2014022682A1 (en) 2014-02-06
IL255772B (en) 2020-09-30
JP2020057008A (ja) 2020-04-09
US20140037187A1 (en) 2014-02-06
US8948495B2 (en) 2015-02-03
JP2018097376A (ja) 2018-06-21
KR20200045577A (ko) 2020-05-04
JP2015527740A (ja) 2015-09-17
JP2021182162A (ja) 2021-11-25
TWI591326B (zh) 2017-07-11
CN104620097A (zh) 2015-05-13
JP6282650B2 (ja) 2018-02-21

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