KR102129826B1 - 웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법 - Google Patents

웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법 Download PDF

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KR102129826B1
KR102129826B1 KR1020157005345A KR20157005345A KR102129826B1 KR 102129826 B1 KR102129826 B1 KR 102129826B1 KR 1020157005345 A KR1020157005345 A KR 1020157005345A KR 20157005345 A KR20157005345 A KR 20157005345A KR 102129826 B1 KR102129826 B1 KR 102129826B1
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dies
defects
printed
wafer
focus
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KR20150036789A (ko
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지노 마쿠치리
아미르 위드만
엘리스 창
존 로빈슨
알렌 박
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H01L21/0274—
    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020157005345A 2012-08-01 2013-08-01 웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법 Active KR102129826B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261678576P 2012-08-01 2012-08-01
US61/678,576 2012-08-01
US13/783,291 US8948495B2 (en) 2012-08-01 2013-03-02 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer
US13/783,291 2013-03-02
PCT/US2013/053252 WO2014022682A1 (en) 2012-08-01 2013-08-01 Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer

Related Child Applications (1)

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KR1020207011864A Division KR102169564B1 (ko) 2012-08-01 2013-08-01 웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법

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Publication Number Publication Date
KR20150036789A KR20150036789A (ko) 2015-04-07
KR102129826B1 true KR102129826B1 (ko) 2020-07-06

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KR1020157005345A Active KR102129826B1 (ko) 2012-08-01 2013-08-01 웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법
KR1020207011864A Active KR102169564B1 (ko) 2012-08-01 2013-08-01 웨이퍼 검사 방법 및/또는 웨이퍼 상에 형성되는 디바이스의 하나 이상의 특징을 예측하는 방법

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Country Status (8)

Country Link
US (1) US8948495B2 (https=)
EP (1) EP2880427A1 (https=)
JP (4) JP6282650B2 (https=)
KR (2) KR102129826B1 (https=)
CN (1) CN104620097B (https=)
IL (2) IL236957B (https=)
TW (1) TWI591326B (https=)
WO (1) WO2014022682A1 (https=)

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Publication number Publication date
IL255772A (en) 2018-01-31
EP2880427A1 (en) 2015-06-10
KR20150036789A (ko) 2015-04-07
TW201415008A (zh) 2014-04-16
IL236957B (en) 2018-07-31
KR102169564B1 (ko) 2020-10-26
WO2014022682A1 (en) 2014-02-06
IL255772B (en) 2020-09-30
JP2020057008A (ja) 2020-04-09
CN104620097B (zh) 2017-08-29
US20140037187A1 (en) 2014-02-06
US8948495B2 (en) 2015-02-03
JP2018097376A (ja) 2018-06-21
KR20200045577A (ko) 2020-05-04
JP2015527740A (ja) 2015-09-17
JP2021182162A (ja) 2021-11-25
TWI591326B (zh) 2017-07-11
CN104620097A (zh) 2015-05-13
JP6282650B2 (ja) 2018-02-21

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