CN104517827B - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置 Download PDF

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Publication number
CN104517827B
CN104517827B CN201410504744.7A CN201410504744A CN104517827B CN 104517827 B CN104517827 B CN 104517827B CN 201410504744 A CN201410504744 A CN 201410504744A CN 104517827 B CN104517827 B CN 104517827B
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mentioned
etching
substrate
phosphoric acid
solution
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Chinese (zh)
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CN104517827A (zh
Inventor
小林信雄
滨田晃
滨田晃一
黑川祯明
古矢正明
森秀树
渡边康司
林义典
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Priority to CN201710432802.3A priority Critical patent/CN107256842B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H10P50/642—
    • H10P50/283—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H10P14/3416—
    • H10P72/0402—
    • H10P72/0422—
    • H10P72/0424—
    • H10P72/7618—
    • H10P95/90—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01009—Fluorine [F]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201410504744.7A 2013-09-30 2014-09-26 基板处理方法和基板处理装置 Active CN104517827B (zh)

Priority Applications (1)

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CN201710432802.3A CN107256842B (zh) 2013-09-30 2014-09-26 基板处理方法和基板处理装置

Applications Claiming Priority (6)

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JP2013205624 2013-09-30
JP2013-205624 2013-09-30
JP2013259658 2013-12-16
JP2013-259658 2013-12-16
JP2014170205A JP6502633B2 (ja) 2013-09-30 2014-08-25 基板処理方法及び基板処理装置
JP2014-170205 2014-08-25

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CN104517827A CN104517827A (zh) 2015-04-15
CN104517827B true CN104517827B (zh) 2017-06-27

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US (1) US10319602B2 (enExample)
JP (1) JP6502633B2 (enExample)
KR (2) KR20150037632A (enExample)
CN (2) CN104517827B (enExample)
TW (1) TWI539516B (enExample)

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JP6502633B2 (ja) * 2013-09-30 2019-04-17 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
DE102013220810A1 (de) * 2013-10-15 2015-04-16 Robert Bosch Gmbh Vorrichtung zur homogenen nasschemischen Behandlung von Substraten
JP6320869B2 (ja) * 2014-07-29 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
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JP6359925B2 (ja) 2014-09-18 2018-07-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6383254B2 (ja) * 2014-11-04 2018-08-29 株式会社東芝 処理装置および処理方法
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KR101962080B1 (ko) * 2015-09-30 2019-03-25 시바우라 메카트로닉스 가부시끼가이샤 기판 처리 장치 및 기판 처리 방법
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US10325779B2 (en) * 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
JP6861039B2 (ja) * 2016-03-30 2021-04-21 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
TWI738757B (zh) * 2016-04-05 2021-09-11 美商維克儀器公司 經由化學的適應性峰化來控制蝕刻速率的裝置和方法
KR101870650B1 (ko) * 2016-08-25 2018-06-27 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN106783692B (zh) * 2017-01-12 2018-01-12 广东工业大学 一种微结构刻蚀的加工装置
JP6909620B2 (ja) * 2017-04-20 2021-07-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
KR102264002B1 (ko) 2017-10-20 2021-06-11 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 기판 처리 방법 및 기억 매체
JP6777704B2 (ja) * 2017-10-20 2020-10-28 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP7004144B2 (ja) * 2017-10-25 2022-01-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6917868B2 (ja) * 2017-11-15 2021-08-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
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CN108109946A (zh) * 2018-01-16 2018-06-01 昆山成功环保科技有限公司 一种刻蚀设备
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KR20190099814A (ko) * 2018-02-20 2019-08-28 삼성전자주식회사 약액 리사이클 시스템, 약액 공급 시스템 및 이를 이용한 반도체 장치 제조 방법
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CN109037119B (zh) * 2018-09-13 2021-04-09 友达光电（昆山）有限公司 一种蚀刻装置
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JP7438172B2 (ja) * 2021-09-13 2024-02-26 芝浦メカトロニクス株式会社 供給装置、供給システム
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US10319602B2 (en) 2019-06-11
JP6502633B2 (ja) 2019-04-17
KR20150037632A (ko) 2015-04-08
TWI539516B (zh) 2016-06-21
JP2015135943A (ja) 2015-07-27
CN107256842B (zh) 2021-06-04
CN107256842A (zh) 2017-10-17
KR20170029453A (ko) 2017-03-15
KR102129450B1 (ko) 2020-07-03
CN104517827A (zh) 2015-04-15
US20150093906A1 (en) 2015-04-02
TW201530646A (zh) 2015-08-01

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