JP7045199B2 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- JP7045199B2 JP7045199B2 JP2018008691A JP2018008691A JP7045199B2 JP 7045199 B2 JP7045199 B2 JP 7045199B2 JP 2018008691 A JP2018008691 A JP 2018008691A JP 2018008691 A JP2018008691 A JP 2018008691A JP 7045199 B2 JP7045199 B2 JP 7045199B2
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- 238000003672 processing method Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 468
- 239000000243 solution Substances 0.000 claims description 404
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 356
- 238000005530 etching Methods 0.000 claims description 189
- 239000007788 liquid Substances 0.000 claims description 186
- 239000000126 substance Substances 0.000 claims description 183
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 178
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 86
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 57
- 239000011574 phosphorus Substances 0.000 claims description 57
- 229910052698 phosphorus Inorganic materials 0.000 claims description 57
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 24
- 229910021529 ammonia Inorganic materials 0.000 claims description 18
- 239000012487 rinsing solution Substances 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 239000012535 impurity Substances 0.000 description 46
- 229910052581 Si3N4 Inorganic materials 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 26
- 229910052814 silicon oxide Inorganic materials 0.000 description 26
- 239000002245 particle Substances 0.000 description 18
- 230000001681 protective effect Effects 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Description
110 スピンチャック
120 燐酸液供給装置
130 リンス液供給装置
140 薬液供給装置
W 基板
Lp 燐酸液
Lr リンス液
Lc 薬液
Claims (12)
- 基板を処理する基板処理方法であって、
前記基板を燐酸液で処理する工程と、
前記基板を前記燐酸液で処理した後に、前記基板をリンス液で処理する工程と、
前記基板を前記リンス液で処理した後に、前記基板を前記燐酸液で処理した際に前記基板に形成された燐拡散領域から前記燐拡散領域の深さ方向における一部の厚さの膜をエッチング液で除去する工程と、
前記エッチング液で除去する工程の後に、前記燐拡散領域から前記燐拡散領域の深さ方向における一部の厚さの膜を除去するように、アンモニアを含有する薬液で前記基板を処理する工程と
を包含する、基板処理方法。 - 前記基板には酸化膜および窒化膜が形成されており、前記膜は酸化膜である、請求項1に記載の基板処理方法。
- 前記エッチング液はフッ酸である、請求項1または2に記載の基板処理方法。
- 前記基板を前記エッチング液でエッチングするエッチング速度は、前記基板を前記薬液でエッチングするエッチング速度よりも大きい、請求項1から3のいずれかに記載の基板処理方法。
- 前記エッチング液で前記基板から除去する膜の厚さは、前記薬液で前記基板から除去する膜の厚さよりも大きい、請求項1から4のいずれかに記載の基板処理方法。
- 前記エッチング液の温度は前記薬液の温度よりも高い、請求項1から5のいずれかに記載の基板処理方法。
- 基板を処理する基板処理装置であって、
燐酸液を前記基板に供給する燐酸液供給装置と、
リンス液を前記基板に供給するリンス液供給装置と、
アンモニアを含有する薬液を前記基板に供給する薬液供給装置と、
エッチング液を前記基板に供給するエッチング液供給装置と、
前記燐酸液供給装置と、前記リンス液供給装置と、前記薬液供給装置と、前記エッチング液供給装置とを制御する制御部と
を備え、
前記制御部は、
前記燐酸液供給装置が前記燐酸液を前記基板に供給して前記基板を前記燐酸液で処理するように、前記燐酸液供給装置を制御し、
前記燐酸液で前記基板を処理した後に、前記リンス液供給装置が前記リンス液を前記基板に供給して前記基板を前記リンス液で処理するように、前記リンス液供給装置を制御し、
前記リンス液で前記基板を処理した後に、前記薬液供給装置が前記薬液を前記基板に供給して、前記基板を前記燐酸液で前記基板を処理した際に前記基板に形成された燐拡散領域から前記燐拡散領域の深さ方向における一部の厚さの膜を除去するように、前記薬液供給装置を制御し、
前記基板を前記リンス液で処理した後であって、前記基板を前記薬液で処理する前に、前記基板の前記燐拡散領域の深さ方向における一部の厚さの膜を前記エッチング液で除去するように、前記エッチング液供給装置を制御する、基板処理装置。 - 前記基板には酸化膜および窒化膜が形成されており、前記膜は酸化膜である、請求項7に記載の基板処理装置。
- 前記エッチング液はフッ酸である、請求項7または8に記載の基板処理装置。
- 前記制御部は、前記エッチング液で前記基板をエッチングするエッチング速度が前記薬液で前記基板をエッチングするエッチング速度よりも大きくなるように、前記エッチング液供給装置および前記薬液供給装置を制御する、請求項7から9のいずれかに記載の基板処理装置。
- 前記制御部は、前記エッチング液で前記基板から除去する膜の厚さが前記薬液で前記基板から除去する膜の厚さよりも大きくなるように、前記エッチング液供給装置および前記薬液供給装置を制御する、請求項7から10のいずれかに記載の基板処理装置。
- 前記制御部は、前記エッチング液の温度が前記薬液の温度よりも高くなるように前記エッチング液供給装置および前記薬液供給装置を制御する、請求項7から11のいずれかに記載の基板処理装置。
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