CN104137239B - 非易失性半导体存储器以及非易失性半导体存储器的制造方法 - Google Patents

非易失性半导体存储器以及非易失性半导体存储器的制造方法 Download PDF

Info

Publication number
CN104137239B
CN104137239B CN201380010880.4A CN201380010880A CN104137239B CN 104137239 B CN104137239 B CN 104137239B CN 201380010880 A CN201380010880 A CN 201380010880A CN 104137239 B CN104137239 B CN 104137239B
Authority
CN
China
Prior art keywords
oxide film
silicon
silicon nitride
film
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380010880.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN104137239A (zh
Inventor
福本洋平
佐佐木隆兴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN104137239A publication Critical patent/CN104137239A/zh
Application granted granted Critical
Publication of CN104137239B publication Critical patent/CN104137239B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/683—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being parallel to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CN201380010880.4A 2012-02-28 2013-02-22 非易失性半导体存储器以及非易失性半导体存储器的制造方法 Active CN104137239B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012041221A JP5998521B2 (ja) 2012-02-28 2012-02-28 不揮発性半導体メモリー及び不揮発性半導体メモリーの製造方法
JP2012-041221 2012-02-28
PCT/JP2013/001031 WO2013128864A1 (ja) 2012-02-28 2013-02-22 不揮発性半導体メモリー及び不揮発性半導体メモリーの製造方法

Publications (2)

Publication Number Publication Date
CN104137239A CN104137239A (zh) 2014-11-05
CN104137239B true CN104137239B (zh) 2018-01-12

Family

ID=49082077

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380010880.4A Active CN104137239B (zh) 2012-02-28 2013-02-22 非易失性半导体存储器以及非易失性半导体存储器的制造方法

Country Status (6)

Country Link
US (1) US9461138B2 (enExample)
JP (1) JP5998521B2 (enExample)
KR (1) KR101618160B1 (enExample)
CN (1) CN104137239B (enExample)
TW (1) TWI609480B (enExample)
WO (1) WO2013128864A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6880595B2 (ja) 2016-08-10 2021-06-02 セイコーエプソン株式会社 半導体装置及びその製造方法
US10777566B2 (en) 2017-11-10 2020-09-15 Macronix International Co., Ltd. 3D array arranged for memory and in-memory sum-of-products operations
US10957392B2 (en) 2018-01-17 2021-03-23 Macronix International Co., Ltd. 2D and 3D sum-of-products array for neuromorphic computing system
US10719296B2 (en) 2018-01-17 2020-07-21 Macronix International Co., Ltd. Sum-of-products accelerator array
US20190244662A1 (en) * 2018-02-02 2019-08-08 Macronix International Co., Ltd. Sum-of-products array for neuromorphic computing system
JP6976190B2 (ja) * 2018-02-20 2021-12-08 キオクシア株式会社 記憶装置
US10635398B2 (en) 2018-03-15 2020-04-28 Macronix International Co., Ltd. Voltage sensing type of matrix multiplication method for neuromorphic computing system
US11138497B2 (en) 2018-07-17 2021-10-05 Macronix International Co., Ltd In-memory computing devices for neural networks
US11636325B2 (en) 2018-10-24 2023-04-25 Macronix International Co., Ltd. In-memory data pooling for machine learning
US10672469B1 (en) 2018-11-30 2020-06-02 Macronix International Co., Ltd. In-memory convolution for machine learning
US11562229B2 (en) 2018-11-30 2023-01-24 Macronix International Co., Ltd. Convolution accelerator using in-memory computation
US11934480B2 (en) 2018-12-18 2024-03-19 Macronix International Co., Ltd. NAND block architecture for in-memory multiply-and-accumulate operations
US11119674B2 (en) 2019-02-19 2021-09-14 Macronix International Co., Ltd. Memory devices and methods for operating the same
US10783963B1 (en) 2019-03-08 2020-09-22 Macronix International Co., Ltd. In-memory computation device with inter-page and intra-page data circuits
US11132176B2 (en) 2019-03-20 2021-09-28 Macronix International Co., Ltd. Non-volatile computing method in flash memory
US10910393B2 (en) 2019-04-25 2021-02-02 Macronix International Co., Ltd. 3D NOR memory having vertical source and drain structures
JP2021061450A (ja) * 2021-01-20 2021-04-15 セイコーエプソン株式会社 半導体装置及びその製造方法
US11737274B2 (en) 2021-02-08 2023-08-22 Macronix International Co., Ltd. Curved channel 3D memory device
US11916011B2 (en) 2021-04-14 2024-02-27 Macronix International Co., Ltd. 3D virtual ground memory and manufacturing methods for same
US11710519B2 (en) 2021-07-06 2023-07-25 Macronix International Co., Ltd. High density memory with reference memory using grouped cells and corresponding operations
US12299597B2 (en) 2021-08-27 2025-05-13 Macronix International Co., Ltd. Reconfigurable AI system
US12321603B2 (en) 2023-02-22 2025-06-03 Macronix International Co., Ltd. High bandwidth non-volatile memory for AI inference system
US12417170B2 (en) 2023-05-10 2025-09-16 Macronix International Co., Ltd. Computing system and method of operation thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010021133A1 (en) * 2000-03-10 2001-09-13 Fujitsu Limited Method for manufacturing non-volatile semiconductor memory and non-volatile semiconductor memory manufactured thereby
US20040094793A1 (en) * 2002-11-15 2004-05-20 Mitsuhiro Noguchi Semiconductor memory device
CN1848458A (zh) * 2005-03-11 2006-10-18 英飞凌科技股份公司 半导体存储器

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226502A (ja) 1994-02-14 1995-08-22 Sony Corp Ｍｏｓトランジスタ及びその製造方法
JP3240999B2 (ja) 1998-08-04 2001-12-25 日本電気株式会社 半導体記憶装置及びその製造方法
JP3482171B2 (ja) 1999-03-25 2003-12-22 松下電器産業株式会社 半導体装置及びその製造方法
US6573132B1 (en) 1999-03-25 2003-06-03 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor device having contacts self-aligned with a gate electrode thereof
JP3961211B2 (ja) 2000-10-31 2007-08-22 株式会社東芝 半導体装置の製造方法
JP2002222876A (ja) 2001-01-25 2002-08-09 Sony Corp 不揮発性半導体記憶素子及びその製造方法
JP3641596B2 (ja) 2001-05-09 2005-04-20 株式会社東芝 半導体記憶装置及びその製造方法
US6555865B2 (en) 2001-07-10 2003-04-29 Samsung Electronics Co. Ltd. Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same
JP2003264247A (ja) 2002-03-11 2003-09-19 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
KR100463184B1 (ko) 2003-01-30 2004-12-23 아남반도체 주식회사 비휘발성 메모리 장치 제조 방법
KR100546692B1 (ko) * 2004-05-03 2006-01-26 동부아남반도체 주식회사 플래시 메모리 소자의 제조 방법
JP2006032541A (ja) 2004-07-14 2006-02-02 Renesas Technology Corp 半導体装置
KR100642898B1 (ko) 2004-07-21 2006-11-03 에스티마이크로일렉트로닉스 엔.브이. 반도체 장치의 트랜지스터 및 그 제조방법
JP4890435B2 (ja) * 2005-01-28 2012-03-07 スパンション エルエルシー 不揮発性メモリ及びその制御方法
JP4783044B2 (ja) * 2005-03-23 2011-09-28 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置
JP2007005699A (ja) * 2005-06-27 2007-01-11 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその製造方法
JP2008218727A (ja) 2007-03-05 2008-09-18 Renesas Technology Corp 半導体装置とその製造方法
JP2009071325A (ja) * 2008-11-25 2009-04-02 Renesas Technology Corp 半導体装置の製造方法及び半導体装置
US8471328B2 (en) * 2010-07-26 2013-06-25 United Microelectronics Corp. Non-volatile memory and manufacturing method thereof
US8629025B2 (en) * 2012-02-23 2014-01-14 United Microelectronics Corp. Semiconductor device and method for fabricating semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010021133A1 (en) * 2000-03-10 2001-09-13 Fujitsu Limited Method for manufacturing non-volatile semiconductor memory and non-volatile semiconductor memory manufactured thereby
US20040094793A1 (en) * 2002-11-15 2004-05-20 Mitsuhiro Noguchi Semiconductor memory device
CN1848458A (zh) * 2005-03-11 2006-10-18 英飞凌科技股份公司 半导体存储器

Also Published As

Publication number Publication date
KR20140136000A (ko) 2014-11-27
CN104137239A (zh) 2014-11-05
KR101618160B1 (ko) 2016-05-04
WO2013128864A1 (ja) 2013-09-06
US20150008500A1 (en) 2015-01-08
US9461138B2 (en) 2016-10-04
TWI609480B (zh) 2017-12-21
JP2013179122A (ja) 2013-09-09
TW201347149A (zh) 2013-11-16
JP5998521B2 (ja) 2016-09-28

Similar Documents

Publication Publication Date Title
CN104137239B (zh) 非易失性半导体存储器以及非易失性半导体存储器的制造方法
CN103035650B (zh) 半导体装置以及半导体装置的制造方法
US6486028B1 (en) Method of fabricating a nitride read-only-memory cell vertical structure
CN100435286C (zh) 形成纳米簇电荷存储器件的方法
CN100530600C (zh) 形成非易失性半导体内存组件的方法
TWI408800B (zh) 非揮發性記憶體單元及其製造方法
CN100585861C (zh) 非易失性半导体存储装置
CN101373775A (zh) 半导体存储器件及其制造方法
JP4901729B2 (ja) ナノクラスタ電荷蓄積デバイスの形成方法
WO2008112370A1 (en) Electronic device including channel regions lying at different elevations and processes of forming the same
KR20040103342A (ko) 반도체 장치의 제조 방법 및 반도체 장치
US20070257304A1 (en) Semiconductor device and method of manufacturing the same
US20140284683A1 (en) Semiconductor device and manufacturing method of semiconductor device
US7301193B2 (en) Structure and method for low Vss resistance and reduced DIBL in a floating gate memory cell
CN102569303A (zh) 浮栅型半导体存储器件及其制造方法
CN106024852A (zh) 用于制造半导体器件的方法
CN103380488B (zh) 边缘圆化的场效应晶体管及制造方法
JP2005197684A (ja) 半導体装置
CN101226882B (zh) 无须采用额外掩模以相同工艺制造存储与逻辑元件的方法
JP2002313968A (ja) 半導体装置およびその製造方法
WO2006095890A1 (ja) 半導体装置およびその製造方法
US20090140321A1 (en) Semiconductor device and method of fabricating the same
JP5363004B2 (ja) 半導体装置の製造方法
JPH11251463A (ja) 半導体記憶装置およびその製造方法
JP2010129594A (ja) 半導体記憶装置及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant