CN103843122A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
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- CN103843122A CN103843122A CN201180073865.5A CN201180073865A CN103843122A CN 103843122 A CN103843122 A CN 103843122A CN 201180073865 A CN201180073865 A CN 201180073865A CN 103843122 A CN103843122 A CN 103843122A
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- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Geometry (AREA)
- Power Conversion In General (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electronic Switches (AREA)
- Wire Bonding (AREA)
- Inverter Devices (AREA)
Abstract
Description
Claims (26)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710264506.7A CN107104057B (zh) | 2011-09-30 | 2011-09-30 | 半导体器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/072584 WO2013046439A1 (ja) | 2011-09-30 | 2011-09-30 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710264506.7A Division CN107104057B (zh) | 2011-09-30 | 2011-09-30 | 半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103843122A true CN103843122A (zh) | 2014-06-04 |
CN103843122B CN103843122B (zh) | 2017-04-05 |
Family
ID=47994544
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710264506.7A Active CN107104057B (zh) | 2011-09-30 | 2011-09-30 | 半导体器件 |
CN201180073865.5A Active CN103843122B (zh) | 2011-09-30 | 2011-09-30 | 半导体器件 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710264506.7A Active CN107104057B (zh) | 2011-09-30 | 2011-09-30 | 半导体器件 |
Country Status (7)
Country | Link |
---|---|
US (2) | US9263435B2 (zh) |
EP (2) | EP3460832A1 (zh) |
JP (1) | JP5676771B2 (zh) |
KR (2) | KR101672605B1 (zh) |
CN (2) | CN107104057B (zh) |
TW (2) | TWI538161B (zh) |
WO (1) | WO2013046439A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105529939A (zh) * | 2014-09-30 | 2016-04-27 | 万国半导体股份有限公司 | 单独封装同步整流器 |
CN106951586A (zh) * | 2017-02-15 | 2017-07-14 | 上海集成电路研发中心有限公司 | 一种考虑温度效应的射频mos器件的建模方法 |
CN109429529A (zh) * | 2017-06-19 | 2019-03-05 | 新电元工业株式会社 | 半导体装置 |
CN111199958A (zh) * | 2018-11-16 | 2020-05-26 | 苏州东微半导体有限公司 | 半导体功率器件 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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US9735238B2 (en) * | 2014-01-15 | 2017-08-15 | Virginia Tech Intellectual Properties, Inc. | Avoiding internal switching loss in soft switching cascode structure device |
US10043738B2 (en) | 2014-01-24 | 2018-08-07 | Silergy Semiconductor Technology (Hangzhou) Ltd | Integrated package assembly for switching regulator |
WO2015114728A1 (ja) * | 2014-01-28 | 2015-08-06 | 株式会社日立製作所 | パワーモジュール、電力変換装置、および鉄道車両 |
JP6374225B2 (ja) * | 2014-06-02 | 2018-08-15 | ルネサスエレクトロニクス株式会社 | 半導体装置および電子装置 |
JP6223918B2 (ja) * | 2014-07-07 | 2017-11-01 | 株式会社東芝 | 半導体装置 |
US10290566B2 (en) * | 2014-09-23 | 2019-05-14 | Infineon Technologies Austria Ag | Electronic component |
JP2016139997A (ja) | 2015-01-28 | 2016-08-04 | 株式会社東芝 | 半導体装置 |
JP2016213327A (ja) * | 2015-05-08 | 2016-12-15 | シャープ株式会社 | 半導体装置 |
WO2017043611A1 (ja) * | 2015-09-10 | 2017-03-16 | 古河電気工業株式会社 | パワーデバイス |
JP6631114B2 (ja) * | 2015-09-17 | 2020-01-15 | 富士電機株式会社 | 半導体装置及び半導体装置の計測方法 |
FR3059155B1 (fr) * | 2016-11-23 | 2018-11-16 | Exagan | Circuit integre forme d'un empilement de deux puces connectees en serie |
JP6769458B2 (ja) * | 2017-07-26 | 2020-10-14 | 株式会社デンソー | 半導体装置 |
JP6822939B2 (ja) | 2017-11-30 | 2021-01-27 | 株式会社東芝 | 半導体装置 |
US10886201B2 (en) * | 2018-02-15 | 2021-01-05 | Epistar Corporation | Power device having a substrate with metal layers exposed at surfaces of an insulation layer and manufacturing method thereof |
DE102018115110B3 (de) * | 2018-06-22 | 2019-09-26 | Infineon Technologies Ag | Siliziumcarbid-halbleitervorrichtung |
JP2018195838A (ja) * | 2018-07-19 | 2018-12-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP7024688B2 (ja) | 2018-11-07 | 2022-02-24 | 株式会社デンソー | 半導体装置 |
EP3809458A1 (en) * | 2019-10-15 | 2021-04-21 | Nexperia B.V. | Half-bridge semiconductor device |
JP2022146340A (ja) * | 2021-03-22 | 2022-10-05 | 株式会社東芝 | 半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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DE19610135C1 (de) | 1996-03-14 | 1997-06-19 | Siemens Ag | Elektronische Einrichtung, insbesondere zum Schalten elektrischer Ströme, für hohe Sperrspannungen und mit geringen Durchlaßverlusten |
JP3046017B1 (ja) | 1999-02-25 | 2000-05-29 | インターナショナル・レクチファイヤー・コーポレーション | コパッケ―ジmos―ゲ―トデバイスおよび制御ic |
JP2002208673A (ja) | 2001-01-10 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置およびパワーモジュール |
JP4471555B2 (ja) * | 2002-04-22 | 2010-06-02 | 三洋電機株式会社 | 半導体装置 |
US6900537B2 (en) * | 2002-10-31 | 2005-05-31 | International Rectifier Corporation | High power silicon carbide and silicon semiconductor device package |
JP2006114674A (ja) * | 2004-10-14 | 2006-04-27 | Toshiba Corp | 半導体装置 |
JP5358882B2 (ja) | 2007-02-09 | 2013-12-04 | サンケン電気株式会社 | 整流素子を含む複合半導体装置 |
JP2009071059A (ja) * | 2007-09-13 | 2009-04-02 | Sanyo Electric Co Ltd | 半導体装置 |
JP2009231805A (ja) | 2008-02-29 | 2009-10-08 | Renesas Technology Corp | 半導体装置 |
JP5844956B2 (ja) | 2009-03-05 | 2016-01-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
DE102009046258B3 (de) * | 2009-10-30 | 2011-07-07 | Infineon Technologies AG, 85579 | Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls |
US8575695B2 (en) * | 2009-11-30 | 2013-11-05 | Alpha And Omega Semiconductor Incorporated | Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode |
JP5012930B2 (ja) * | 2010-02-15 | 2012-08-29 | 株式会社デンソー | ハイブリッドパワーデバイス |
-
2011
- 2011-09-30 US US14/348,048 patent/US9263435B2/en active Active
- 2011-09-30 EP EP18203412.4A patent/EP3460832A1/en not_active Withdrawn
- 2011-09-30 EP EP11873214.8A patent/EP2763160B1/en active Active
- 2011-09-30 CN CN201710264506.7A patent/CN107104057B/zh active Active
- 2011-09-30 JP JP2013535780A patent/JP5676771B2/ja active Active
- 2011-09-30 KR KR1020147008420A patent/KR101672605B1/ko active Application Filing
- 2011-09-30 CN CN201180073865.5A patent/CN103843122B/zh active Active
- 2011-09-30 KR KR1020167029941A patent/KR101708162B1/ko active IP Right Grant
- 2011-09-30 WO PCT/JP2011/072584 patent/WO2013046439A1/ja active Application Filing
-
2012
- 2012-08-14 TW TW101129402A patent/TWI538161B/zh active
- 2012-08-14 TW TW105110663A patent/TWI614877B/zh active
-
2016
- 2016-02-07 US US15/017,666 patent/US9502388B2/en active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105529939A (zh) * | 2014-09-30 | 2016-04-27 | 万国半导体股份有限公司 | 单独封装同步整流器 |
CN105529939B (zh) * | 2014-09-30 | 2018-01-23 | 万国半导体股份有限公司 | 单独封装同步整流器 |
CN106951586A (zh) * | 2017-02-15 | 2017-07-14 | 上海集成电路研发中心有限公司 | 一种考虑温度效应的射频mos器件的建模方法 |
CN106951586B (zh) * | 2017-02-15 | 2020-05-15 | 上海集成电路研发中心有限公司 | 一种考虑温度效应的射频mos器件的建模方法 |
CN109429529A (zh) * | 2017-06-19 | 2019-03-05 | 新电元工业株式会社 | 半导体装置 |
CN111199958A (zh) * | 2018-11-16 | 2020-05-26 | 苏州东微半导体有限公司 | 半导体功率器件 |
Also Published As
Publication number | Publication date |
---|---|
KR101708162B1 (ko) | 2017-02-17 |
EP2763160A4 (en) | 2016-01-13 |
CN107104057A (zh) | 2017-08-29 |
JP5676771B2 (ja) | 2015-02-25 |
EP2763160B1 (en) | 2018-12-12 |
KR20160127176A (ko) | 2016-11-02 |
US9502388B2 (en) | 2016-11-22 |
KR101672605B1 (ko) | 2016-11-03 |
US20140231829A1 (en) | 2014-08-21 |
TW201628161A (zh) | 2016-08-01 |
EP3460832A1 (en) | 2019-03-27 |
TW201314866A (zh) | 2013-04-01 |
US9263435B2 (en) | 2016-02-16 |
CN107104057B (zh) | 2019-08-13 |
WO2013046439A1 (ja) | 2013-04-04 |
TWI614877B (zh) | 2018-02-11 |
EP2763160A1 (en) | 2014-08-06 |
CN103843122B (zh) | 2017-04-05 |
JPWO2013046439A1 (ja) | 2015-03-26 |
US20160155726A1 (en) | 2016-06-02 |
KR20140082679A (ko) | 2014-07-02 |
TWI538161B (zh) | 2016-06-11 |
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