CN103748685B - 绝缘栅双极晶体管 - Google Patents
绝缘栅双极晶体管 Download PDFInfo
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- CN103748685B CN103748685B CN201280034911.5A CN201280034911A CN103748685B CN 103748685 B CN103748685 B CN 103748685B CN 201280034911 A CN201280034911 A CN 201280034911A CN 103748685 B CN103748685 B CN 103748685B
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- 230000004888 barrier function Effects 0.000 claims abstract description 78
- 238000009413 insulation Methods 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 2
- 238000004513 sizing Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 18
- 230000000694 effects Effects 0.000 description 15
- 230000000903 blocking effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Abstract
Description
1 | IGBT | 11 | 发射极侧 |
15 | 集电极侧 | 100 | 有源单元 |
110 | 虚拟单元 | 120、130、140、150、160 | 现有技术的IGBT |
2 | 发射极电极 | 25 | 集电极电极 |
3 | 第一沟栅电极 | 31 | 平面栅 |
300 | 倒下的沟栅 | 34 | 第一绝缘层 |
32 | 第二绝缘层 | 4 | 栅电极 |
41 | 第二沟栅电极 | 42 | 导电层 |
43 | 第三绝缘层 | 44 | 第四绝缘层 |
45 | 第五绝缘层 | 46 | 第六绝缘层 |
47 | 凹槽 | ||
410 | 另外的第二沟栅电极 | 420 | 另外的导电层 |
430 | 另外的第三绝缘层 | 440 | 另外的第四绝缘层 |
450 | 另外的第五绝缘层 | 470 | 另外的凹槽 |
5 | 基极层 | 57 | 连接层 |
6 | 增强层 | 7 | 第一源区 |
75 | 第二源区 | 8 | 漂移层 |
85 | 缓冲层 | 9 | 集电极层 |
95 | 第一区 |
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11173910.8 | 2011-07-14 | ||
EP11173910 | 2011-07-14 | ||
PCT/EP2012/063305 WO2013007654A1 (en) | 2011-07-14 | 2012-07-06 | Insulated gate bipolar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103748685A CN103748685A (zh) | 2014-04-23 |
CN103748685B true CN103748685B (zh) | 2016-08-17 |
Family
ID=44654610
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280034940.1A Active CN103875074B (zh) | 2011-07-14 | 2012-07-06 | 绝缘栅晶体管及其生产方法 |
CN201280034911.5A Active CN103748685B (zh) | 2011-07-14 | 2012-07-06 | 绝缘栅双极晶体管 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280034940.1A Active CN103875074B (zh) | 2011-07-14 | 2012-07-06 | 绝缘栅晶体管及其生产方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US9099520B2 (zh) |
EP (1) | EP2732471B8 (zh) |
JP (2) | JP6026528B2 (zh) |
KR (2) | KR101933244B1 (zh) |
CN (2) | CN103875074B (zh) |
DE (1) | DE112012002956B4 (zh) |
GB (2) | GB2506314B (zh) |
WO (2) | WO2013007658A1 (zh) |
Families Citing this family (32)
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KR20100060579A (ko) * | 2008-11-27 | 2010-06-07 | 엘지이노텍 주식회사 | 케이스 |
CN103650148B (zh) * | 2011-07-07 | 2016-06-01 | Abb技术有限公司 | 绝缘栅双极晶体管 |
JP6026528B2 (ja) | 2011-07-14 | 2016-11-16 | アーベーベー・テヒノロギー・アーゲー | 絶縁ゲート型バイポーラトランジスタ |
JP2014060362A (ja) * | 2012-09-19 | 2014-04-03 | Toshiba Corp | 半導体装置 |
KR101452091B1 (ko) | 2013-02-26 | 2014-10-16 | 삼성전기주식회사 | 전력 반도체 소자 및 그 제조 방법 |
JP6052065B2 (ja) * | 2013-05-31 | 2016-12-27 | 豊田合成株式会社 | 半導体素装置および半導体装置の製造方法 |
JP6356803B2 (ja) * | 2013-11-29 | 2018-07-11 | アーベーベー・テクノロジー・アーゲー | 絶縁ゲートバイポーラトランジスタ |
JP6176156B2 (ja) * | 2014-03-06 | 2017-08-09 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
CN103956379B (zh) * | 2014-05-09 | 2017-01-04 | 常州中明半导体技术有限公司 | 具有优化嵌入原胞结构的cstbt器件 |
JP6360191B2 (ja) | 2014-10-29 | 2018-07-18 | 株式会社日立製作所 | 電力変換装置 |
CN104409479A (zh) * | 2014-11-05 | 2015-03-11 | 中国东方电气集团有限公司 | 一种电力电子半导体芯片的终端单元结构及其制造方法 |
CN104332491B (zh) * | 2014-11-05 | 2018-05-22 | 中国东方电气集团有限公司 | 采用金属延伸、多晶截止场板的终端单元结构及制造方法 |
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CN105047705B (zh) * | 2015-06-30 | 2018-04-27 | 西安理工大学 | 一种电子注入增强型的高压igbt及其制造方法 |
JP6605870B2 (ja) * | 2015-07-30 | 2019-11-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10367085B2 (en) | 2015-08-31 | 2019-07-30 | Littelfuse, Inc. | IGBT with waved floating P-Well electron injection |
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CN105226090B (zh) * | 2015-11-10 | 2018-07-13 | 株洲中车时代电气股份有限公司 | 一种绝缘栅双极晶体管及其制作方法 |
JP6634860B2 (ja) * | 2016-02-10 | 2020-01-22 | 株式会社デンソー | 半導体装置 |
CN105762181A (zh) * | 2016-03-04 | 2016-07-13 | 李思敏 | 一种多晶硅发射极晶体管及其制造方法 |
CA3033462C (en) * | 2016-08-10 | 2020-09-01 | Nissan Motor Co., Ltd. | Semiconductor device |
JP6817116B2 (ja) * | 2017-03-14 | 2021-01-20 | エイブリック株式会社 | 半導体装置 |
JP6962063B2 (ja) * | 2017-08-23 | 2021-11-05 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
EP3471147B1 (en) * | 2017-10-10 | 2020-08-05 | ABB Power Grids Switzerland AG | Insulated gate bipolar transistor |
DE102019109368A1 (de) * | 2018-05-15 | 2019-11-21 | Infineon Technologies Ag | Halbleitervorrichtung mit siliziumcarbidkörper und herstellungsverfahren |
JP7056742B2 (ja) * | 2018-08-10 | 2022-04-19 | 富士電機株式会社 | 半導体装置 |
CN113396482B (zh) * | 2019-02-07 | 2023-12-19 | 罗姆股份有限公司 | 半导体装置 |
US20220181319A1 (en) * | 2019-03-22 | 2022-06-09 | Abb Power Grids Switzerland Ag | Reverse Conducting Insulated Gate Power Semiconductor Device Having Low Conduction Losses |
EP3881360B1 (en) * | 2019-11-08 | 2022-05-04 | Hitachi Energy Switzerland AG | Insulated gate bipolar transistor |
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Publication number | Publication date |
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DE112012002956T5 (de) | 2014-05-15 |
GB2506314B (en) | 2015-09-09 |
CN103748685A (zh) | 2014-04-23 |
US20140124831A1 (en) | 2014-05-08 |
EP2732471B1 (en) | 2019-09-04 |
KR20140057552A (ko) | 2014-05-13 |
GB2505854B (en) | 2015-12-02 |
CN103875074B (zh) | 2017-02-15 |
CN103875074A (zh) | 2014-06-18 |
DE112012002956B4 (de) | 2017-07-06 |
GB2506314A (en) | 2014-03-26 |
KR101933244B1 (ko) | 2018-12-27 |
US20140124830A1 (en) | 2014-05-08 |
EP2732471A1 (en) | 2014-05-21 |
US9099520B2 (en) | 2015-08-04 |
KR101933242B1 (ko) | 2018-12-27 |
JP6021908B2 (ja) | 2016-11-09 |
JP2014523134A (ja) | 2014-09-08 |
JP2014523135A (ja) | 2014-09-08 |
GB201400116D0 (en) | 2014-02-19 |
GB201400432D0 (en) | 2014-02-26 |
KR20140042858A (ko) | 2014-04-07 |
EP2732471B8 (en) | 2019-10-09 |
WO2013007654A1 (en) | 2013-01-17 |
US9153676B2 (en) | 2015-10-06 |
JP6026528B2 (ja) | 2016-11-16 |
WO2013007658A1 (en) | 2013-01-17 |
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