CN103050521A - 锗硅hbt器件的集电区引出结构及其制造方法 - Google Patents
锗硅hbt器件的集电区引出结构及其制造方法 Download PDFInfo
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- CN103050521A CN103050521A CN2012101637840A CN201210163784A CN103050521A CN 103050521 A CN103050521 A CN 103050521A CN 2012101637840 A CN2012101637840 A CN 2012101637840A CN 201210163784 A CN201210163784 A CN 201210163784A CN 103050521 A CN103050521 A CN 103050521A
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- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229920005591 polysilicon Polymers 0.000 claims abstract description 181
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 174
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000012535 impurity Substances 0.000 claims abstract description 28
- 230000001154 acute effect Effects 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052732 germanium Inorganic materials 0.000 claims description 41
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 29
- 238000002513 implantation Methods 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 238000011065 in-situ storage Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- 150000002290 germanium Chemical class 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210163784.0A CN103050521B (zh) | 2012-05-23 | 2012-05-23 | 锗硅hbt器件的集电区引出结构及其制造方法 |
US13/899,040 US8803279B2 (en) | 2012-05-23 | 2013-05-21 | Structure for picking up a collector and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210163784.0A CN103050521B (zh) | 2012-05-23 | 2012-05-23 | 锗硅hbt器件的集电区引出结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN103050521A true CN103050521A (zh) | 2013-04-17 |
CN103050521B CN103050521B (zh) | 2015-02-04 |
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CN201210163784.0A Active CN103050521B (zh) | 2012-05-23 | 2012-05-23 | 锗硅hbt器件的集电区引出结构及其制造方法 |
Country Status (2)
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US (1) | US8803279B2 (zh) |
CN (1) | CN103050521B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109461769A (zh) * | 2018-12-10 | 2019-03-12 | 无锡紫光微电子有限公司 | 一种沟槽栅igbt器件结构及其制作方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324628B2 (en) | 2014-02-25 | 2016-04-26 | International Business Machines Corporation | Integrated circuit heat dissipation using nanostructures |
US10553633B2 (en) * | 2014-05-30 | 2020-02-04 | Klaus Y.J. Hsu | Phototransistor with body-strapped base |
US20160380067A1 (en) * | 2015-06-23 | 2016-12-29 | Globalfoundries Inc. | Shaped terminals for a bipolar junction transistor |
US10431654B2 (en) | 2015-06-25 | 2019-10-01 | International Business Machines Corporation | Extrinsic base doping for bipolar junction transistors |
Citations (5)
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US20050139862A1 (en) * | 2002-11-01 | 2005-06-30 | Park Chan W. | Self-aligned heterojunction bipolar transistor and manufacturing method thereof |
US20050184359A1 (en) * | 2004-02-25 | 2005-08-25 | International Business Machines Corporation | Structure and method of self-aligned bipolar transistor having tapered collector |
CN102231379A (zh) * | 2009-12-21 | 2011-11-02 | 上海华虹Nec电子有限公司 | SiGe异质结双极晶体管多指结构 |
CN102412287A (zh) * | 2011-11-08 | 2012-04-11 | 上海华虹Nec电子有限公司 | 锗硅hbt器件及其制造方法 |
CN102437180A (zh) * | 2011-11-21 | 2012-05-02 | 上海华虹Nec电子有限公司 | 超高压锗硅hbt器件及其制造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3528756B2 (ja) * | 2000-05-12 | 2004-05-24 | 松下電器産業株式会社 | 半導体装置 |
US6396107B1 (en) * | 2000-11-20 | 2002-05-28 | International Business Machines Corporation | Trench-defined silicon germanium ESD diode network |
US7384854B2 (en) * | 2002-03-08 | 2008-06-10 | International Business Machines Corporation | Method of forming low capacitance ESD robust diodes |
US7091099B2 (en) * | 2003-03-25 | 2006-08-15 | Matsushita Electric Industrial Co., Ltd. | Bipolar transistor and method for fabricating the same |
JP4216634B2 (ja) | 2003-04-23 | 2009-01-28 | 株式会社日立製作所 | 半導体装置 |
US7348256B2 (en) * | 2005-07-25 | 2008-03-25 | Atmel Corporation | Methods of forming reduced electric field DMOS using self-aligned trench isolation |
US7538409B2 (en) * | 2006-06-07 | 2009-05-26 | International Business Machines Corporation | Semiconductor devices |
JP2010010456A (ja) * | 2008-06-27 | 2010-01-14 | Panasonic Corp | 半導体装置 |
CN102097465B (zh) | 2009-12-15 | 2012-11-07 | 上海华虹Nec电子有限公司 | BiCMOS工艺中的寄生垂直型PNP三极管及其制造方法 |
CN102117827B (zh) * | 2009-12-31 | 2012-11-07 | 上海华虹Nec电子有限公司 | BiCMOS工艺中的寄生垂直型PNP器件 |
CN102403256B (zh) * | 2010-09-08 | 2014-02-26 | 上海华虹宏力半导体制造有限公司 | 赝埋层及制造方法、深孔接触及三极管 |
US8492794B2 (en) * | 2011-03-15 | 2013-07-23 | International Business Machines Corporation | Vertical polysilicon-germanium heterojunction bipolar transistor |
-
2012
- 2012-05-23 CN CN201210163784.0A patent/CN103050521B/zh active Active
-
2013
- 2013-05-21 US US13/899,040 patent/US8803279B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050139862A1 (en) * | 2002-11-01 | 2005-06-30 | Park Chan W. | Self-aligned heterojunction bipolar transistor and manufacturing method thereof |
US20050184359A1 (en) * | 2004-02-25 | 2005-08-25 | International Business Machines Corporation | Structure and method of self-aligned bipolar transistor having tapered collector |
CN102231379A (zh) * | 2009-12-21 | 2011-11-02 | 上海华虹Nec电子有限公司 | SiGe异质结双极晶体管多指结构 |
CN102412287A (zh) * | 2011-11-08 | 2012-04-11 | 上海华虹Nec电子有限公司 | 锗硅hbt器件及其制造方法 |
CN102437180A (zh) * | 2011-11-21 | 2012-05-02 | 上海华虹Nec电子有限公司 | 超高压锗硅hbt器件及其制造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109461769A (zh) * | 2018-12-10 | 2019-03-12 | 无锡紫光微电子有限公司 | 一种沟槽栅igbt器件结构及其制作方法 |
CN109461769B (zh) * | 2018-12-10 | 2024-03-12 | 无锡紫光微电子有限公司 | 一种沟槽栅igbt器件结构及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20130313677A1 (en) | 2013-11-28 |
CN103050521B (zh) | 2015-02-04 |
US8803279B2 (en) | 2014-08-12 |
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