CN103261137A - 含有氟代醇的分子光致抗蚀剂材料及其使用方法 - Google Patents

含有氟代醇的分子光致抗蚀剂材料及其使用方法 Download PDF

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Publication number
CN103261137A
CN103261137A CN2011800601309A CN201180060130A CN103261137A CN 103261137 A CN103261137 A CN 103261137A CN 2011800601309 A CN2011800601309 A CN 2011800601309A CN 201180060130 A CN201180060130 A CN 201180060130A CN 103261137 A CN103261137 A CN 103261137A
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CN
China
Prior art keywords
molecular glass
group
hydrogen
fluoroalcohol
photoresist
Prior art date
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Pending
Application number
CN2011800601309A
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English (en)
Chinese (zh)
Inventor
E·A·德希尔瓦
L·K·桑德伯格
R·苏里亚库马兰
G·布雷塔
L·D·玻加诺
W·辛斯伯格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
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Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN103261137A publication Critical patent/CN103261137A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/24—Halogenated derivatives
    • C07C39/42—Halogenated derivatives containing six-membered aromatic rings and other rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/96—Esters of carbonic or haloformic acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0381—Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/92—Systems containing at least three condensed rings with a condensed ring system consisting of at least two mutually uncondensed aromatic ring systems, linked by an annular structure formed by carbon chains on non-adjacent positions of the aromatic system, e.g. cyclophanes

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN2011800601309A 2010-12-17 2011-11-21 含有氟代醇的分子光致抗蚀剂材料及其使用方法 Pending CN103261137A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/971,292 2010-12-17
US12/971,292 US8530136B2 (en) 2010-12-17 2010-12-17 Fluoroalcohol containing molecular photoresist materials and processes of use
PCT/EP2011/070579 WO2012079919A1 (en) 2010-12-17 2011-11-21 Fluoroalcohol containing molecular photoresist materials and processes of use

Publications (1)

Publication Number Publication Date
CN103261137A true CN103261137A (zh) 2013-08-21

Family

ID=45047757

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800601309A Pending CN103261137A (zh) 2010-12-17 2011-11-21 含有氟代醇的分子光致抗蚀剂材料及其使用方法

Country Status (7)

Country Link
US (1) US8530136B2 (https=)
EP (1) EP2651865B1 (https=)
JP (1) JP5796237B2 (https=)
KR (1) KR101531773B1 (https=)
CN (1) CN103261137A (https=)
TW (1) TWI598683B (https=)
WO (1) WO2012079919A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103752208A (zh) * 2014-01-28 2014-04-30 扬州大学 一种起泡剂和稳泡剂及其合成方法
CN108363275A (zh) * 2018-02-07 2018-08-03 江苏艾森半导体材料股份有限公司 一种用于oled阵列制造的正性光刻胶
CN108897192A (zh) * 2018-04-19 2018-11-27 中科院广州化学有限公司南雄材料生产基地 一种巯基-烯纳米压印光刻胶及其使用方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2487148B1 (en) * 2009-10-06 2014-12-31 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, method for producing same, radiation sensitive composition, and method for forming resist pattern
WO2011065004A1 (ja) * 2009-11-27 2011-06-03 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法
EP3304202A4 (en) 2015-05-28 2019-01-09 Intel Corporation MEANS FOR DECOUPLING THE DIFFUSION AND SOLUBILITY SWITCHING MECHANISMS OF PHOTO BAGS
KR102490291B1 (ko) * 2017-07-27 2023-01-20 디아이씨 가부시끼가이샤 레지스트 재료

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093517A (en) * 1998-07-31 2000-07-25 International Business Machines Corporation Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions
US20080026317A1 (en) * 2006-07-28 2008-01-31 International Business Machines Co Method for using compositions containing fluorocarbinols in lithographic processes

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US4189323A (en) 1977-04-25 1980-02-19 Hoechst Aktiengesellschaft Radiation-sensitive copying composition
EP0058638B1 (de) 1981-02-13 1985-08-28 Ciba-Geigy Ag Härtbare Zusammensetzung auf Basis eines säurehärtbaren Harzes und Verfahren zu dessen Härtung
JPH01293339A (ja) 1988-05-23 1989-11-27 Tosoh Corp フォトレジスト組成物
JP3116751B2 (ja) 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3486341B2 (ja) 1997-09-18 2004-01-13 株式会社東芝 感光性組成物およびそれを用いたパターン形成法
JPH11217385A (ja) * 1998-01-30 1999-08-10 Nihon Schering Kk 含フッ素ポルフィリン錯体およびそれを含有する造影剤
US6713225B2 (en) 2002-03-15 2004-03-30 Toyo Gosei Kogyo Co., Ltd. 1,2-Naphthoquinone-2-diazidesulfonate ester photosensitive agent, method for producing the photosensitive agent, and photoresist composition
JP2006208765A (ja) * 2005-01-28 2006-08-10 Matsushita Electric Ind Co Ltd レジスト材料及びそれを用いたパターン形成方法
US20090042123A1 (en) 2005-06-01 2009-02-12 Hiroo Kinoshita Calixresorcinarene compound, photoresist base comprising the same, and composition thereof
KR101588903B1 (ko) 2006-11-02 2016-01-26 미츠비시 가스 가가쿠 가부시키가이샤 감방사선성 조성물
CN102037409B (zh) 2008-05-23 2013-12-11 康奈尔大学 在电子和电气设备中使用的有机材料的正交工艺

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093517A (en) * 1998-07-31 2000-07-25 International Business Machines Corporation Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions
US20080026317A1 (en) * 2006-07-28 2008-01-31 International Business Machines Co Method for using compositions containing fluorocarbinols in lithographic processes

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103752208A (zh) * 2014-01-28 2014-04-30 扬州大学 一种起泡剂和稳泡剂及其合成方法
CN108363275A (zh) * 2018-02-07 2018-08-03 江苏艾森半导体材料股份有限公司 一种用于oled阵列制造的正性光刻胶
CN108897192A (zh) * 2018-04-19 2018-11-27 中科院广州化学有限公司南雄材料生产基地 一种巯基-烯纳米压印光刻胶及其使用方法
CN108897192B (zh) * 2018-04-19 2022-04-05 中科院广州化学有限公司南雄材料生产基地 一种巯基-烯纳米压印光刻胶及其使用方法

Also Published As

Publication number Publication date
KR20130122634A (ko) 2013-11-07
TW201234104A (en) 2012-08-16
US20120156611A1 (en) 2012-06-21
JP5796237B2 (ja) 2015-10-21
WO2012079919A1 (en) 2012-06-21
JP2014502646A (ja) 2014-02-03
EP2651865A1 (en) 2013-10-23
KR101531773B1 (ko) 2015-06-25
EP2651865B1 (en) 2017-07-12
TWI598683B (zh) 2017-09-11
US8530136B2 (en) 2013-09-10

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Application publication date: 20130821