CN103247574A - 鳍式场效应晶体管（finfet）器件的切割掩模图案化工艺 - Google Patents

鳍式场效应晶体管（finfet）器件的切割掩模图案化工艺 Download PDF

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CN103247574A
CN103247574A CN2012101989572A CN201210198957A CN103247574A CN 103247574 A CN103247574 A CN 103247574A CN 2012101989572 A CN2012101989572 A CN 2012101989572A CN 201210198957 A CN201210198957 A CN 201210198957A CN 103247574 A CN103247574 A CN 103247574A
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elongation
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CN103247574B (zh
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何韦德
吕奎亮
谢铭峰
张庆裕
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/845—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

本发明涉及鳍式场效应晶体管(FinFET)器件的切割掩模图案化工艺，其中，用于以非矩形图案对多个部件(诸如位于集成电路器件上)进行图案化的方法包括：提供包括具有多个伸长凸起的表面的衬底，伸长凸起在第一方向上延伸。在表面上方和多个伸长凸起上方形成第一层，并利用端部切割掩模对其进行图案化。端部切割掩模包括两个紧邻的图案，亚分辨率部件被定位和配置为使得第一层上的合成图案包括两个紧邻的图案以及位于它们之间的连接部分。该方法进一步包括使用第一层上的图案对伸长凸起进行端部切割。

Description

鳍式场效应晶体管(FINFET)器件的切割掩模图案化工艺
技术领域
本发明涉及半导体领域，更具体地，涉及鳍式场效应晶体管(FinFET)器件的切割掩模(cut-mask)图案化工艺。
背景技术
集成电路(IC)技术不断得到提高。这种提高通常涉及按比例缩小器件的几何尺寸，以实现更低的制造成本、更高的器件集成密度、更高的速度以及更好的性能。光刻法通常用于形成集成电路器件的元件，在一般情况下，曝光工具使光穿过掩模或中间掩模并且将光聚焦在晶圆的抗蚀剂层上，使得抗蚀剂层在其中具有集成电路元件的图像。曝光工具的分辨率限制了形成具有较小尺寸的器件图案。例如，形成鳍式场效应晶体管(FinFET)器件受限于目前的光刻分辨率限制。因此，尽管现有光刻技术通常足以实现其预期目的，但是随着器件的不断缩小，现有的光刻技术已经不能在所有方面都完全令人满意。
发明内容
本公开描述了集成电路器件、处理方法以及用于半导体处理的掩模。在一个实施例中，用于对集成电路器件上的多个部件进行图案化的方法包括提供衬底，该衬底包括具有多个伸长凸起的表面，伸长凸起在第一方向上延伸。第一层形成在表面的上方和多个伸长凸起的上方，并且利用端部切割掩模对其进行图案化。端部切割掩模包括两个紧邻的图案，其中，亚分辨部件被定位和配置成使得第一层上的合成图案包括两个紧邻的图案和它们之间的连接部分。该方法进一步包括使用第一层上的图案切割伸长凸起的端部。
优选地，第一层是硬掩模层。
优选地，第一层是光刻胶层。
优选地，多个部件是鳍式场效应晶体管(FinFET)器件的鳍。
优选地，伸长凸起是氮化硅隔离件。
优选地，多个部件是沟槽。
优选地，该方法进一步包括：在形成第一层之前，在表面的上方和多个伸长凸起的上方形成第二层；利用线切割掩模对第二层进行图案化；使用第二层上的图案去除伸长凸起的子集。
在另一个实施例中，一种方法包括：提供包括具有第一层和第二层的表面的衬底；以及在第一和第二层上方的第三层中形成第一伸长凸起、第二伸长凸起和第三伸长凸起。第一图案化层形成在三个伸长凸起的上方，并且蚀刻多个伸长凸起以形成三个伸长凸起的第一图案。蚀刻第一图案去除了第二伸长凸起相对较大的部分以及第一伸长凸起和第三伸长凸起相对较小的部分，从而通过较大部分和较小部分形成一个区域。该方法进一步包括在伸长凸起的第一图案的上方形成第二图案化层。第二图案包括位于该区域上方的至少两个隔开的矩形子图案。然后，蚀刻延伸到该区域中的第一伸长凸起和第三伸长凸起的端部。
优选地，第二图案化层是光刻胶层。
优选地，第二图案化层包括非晶硅硬掩模。
优选地，多个伸长凸起在第一方向上延伸，并且第二图案化层被配置成为在垂直于第一方向的方向上对伸长凸起进行端部切割。
优选地，第二图案包括位于区域上方的三个分离的矩形子图案。
优选地，第一层包括硅，第二层包括二氧化硅，伸长凸起包括氮化硅。
优选地，第二图案中的氮化硅伸长凸起是用于鳍式场效应晶体管类型的鳍。
优选地，所述第二图案化层和所述第三图案化层蚀刻多个伸长凸起在包括二氧化硅的层中形成沟槽的图案。
本公开还描述了一种独特的掩模组，其用于具有限定分辨率的光刻系统，该掩模组包括第一掩模和第二掩模。在一个实施例中，掩模组包括第一掩模。第一掩模包括第一图案区域和第二图案区域，这些区域大于使用掩模组的光刻系统的限定分辨率。在相交区域中，第一图案区域和第二图案区域的多个部分被定位为相互接近。第一掩模还包括位于第一图案区域和第二图案区域之间以及相交区域中的亚分辨率部件。亚分辨率部件和相交区域的尺寸的组合使得当在光刻系统中使用掩模时，所得到的图案包括通过相交区域相互互连的第一图案区域和第二图案区域。
优选地，图案区域为矩形。
优选地，限定通过相交区域相互互连的第一图案区域和第二图案区域的大小以对鳍的结构进行图案化。
优选地，第二掩模包括：第三图案区域，形状与第一图案区域和第二图案区域以及相交区域的组合形状类似。
优选地，第二掩模用于对多个鳍进行线切割，并且第一掩模用于对多个鳍进行端部切割。
附图说明
当结合附图进行阅读时，根据下面详细的描述可以更好地理解本发明。应该强调的是，根据工业中的标准实践，各种部件没有被按比例绘制并且仅仅用于说明的目的。实际上，为了清楚的讨论，各种部件的尺寸可以被任意增大或减小。
图1A至图1D是其上形成多个隔离件的集成电路器件的示图。图1A至图1C是俯视图，图1D是图1C的集成电路器件的侧视图。
图2、图5、图8、图9和图14是根据本发明一个或多个实施例的用于进一步处理图1的器件的掩模的俯视图。
图3A至图4是根据本发明一个或多个实施例的使用图2的掩模进行处理的图1的集成电路器件的俯视图和截面图。
图6和图7是根据本发明一个或多个实施例的使用图5的掩模进行处理的图1的集成电路器件的俯视图。
图10至图13是根据本发明一个或多个实施例的使用图8和图9的掩模进行处理的图1的集成电路器件的俯视图。
图15是根据本发明一个或多个实施例的集成电路器件的俯视图。
具体实施方式
以下公开提供了多种不同实施例或实例，用于实现本发明的不同特征。以下将描述组件和布置的特定实例以简化本发明。当然，这些仅是实例并且不用于限制本发明。例如，在以下描述中，在第二部件上方或之上形成第一部件可以包括第一部件和第二部件直接接触的实施例，也可以包括其他部件可形成在第一部件和第二部件之间使得第一部件和第二部件不直接接触的实施例。另外，本发明可以在多个实例中重复参考符号和/或字符。这种重复用于简化和清楚，并且其本身不表示所述多个实施例和/或配置之间的关系。而且，本公开重复多种工艺(诸如，图案化)。将更为详细且借助首先进行论述的一系列可选实施例来描述该工艺。然后，为了避免不必要的重复，将在更多一般细节上对该工艺进行描述。然而，可以理解，这种细节和可选的实施例可以被应用在随后论述的工艺中。
本公开涉及各个制造阶段期间的集成电路器件。集成电路器件为集成电路(IC)芯片、芯片上系统(SoC)或者它们的一部分，集成电路器件包括各种无源和有源微电子部件，诸如电阻器、电容器、电感器、二极管、金属氧化物半导体场效应晶体管(MOSFET)、互补MOS(CMOS)晶体管、双极结型晶体管(BJT)、横向扩散MOS(LDMOS)晶体管、大功率MOS晶体管、鳍式场效应晶体管(FinFET)、其他适当部件或者它们的组合。在一些所示实施例中，如以下进一步描述的，集成电路器件包括各种FinFET器件，并且示出了FinFET器件制造的各个阶段过程中的集成电路器件。术语FinFET器件指的是任何鳍式、多栅极晶体管。可以在集成电路器件中添加额外部件，并且在集成电路器件的其他实施例中，可以替换或去除以下描述的一些部件。
参考图1A至图1D，执行第一或主要掩模工艺，以限定集成电路器件100的各个鳍结构的鳍的宽度和间距，其中，在各个FinFET器件中包括鳍结构。在图1A中，提供衬底110。在本实例中，衬底110为包括硅(Si)和二氧化硅(SiO2)的叠层的半导体衬底。可选或另外地，衬底110包括：基本半导体，诸如硅或锗；化合物半导体，诸如碳化硅、砷化镓、磷化镓、磷化铟、砷化铟、和/或锑化铟；或者它们的组合。可选地，衬底110为绝缘体上硅(SOI)衬底，其可以使用注氧隔离(SIMOX)、晶圆接合或其他方法来制造。衬底110可以包括各种掺杂区域和其他适当部件。
芯轴(mandrel)120的阵列设置在衬底110上方，其中，相邻的芯轴120相互隔开。芯轴120包括图案化或掩蔽材料，诸如抗蚀剂材料、多晶硅、氧化硅、氮化硅、其他图案化或掩蔽材料或者它们的组合。在实例中，形成芯轴120包括：在衬底110上方沉积图案化或掩蔽层(诸如多晶硅层)；在掩蔽层上方形成抗蚀剂层；使用芯轴掩模(可以称作主掩模)将抗蚀剂层暴露在辐射中，从而形成抗蚀剂层的曝光部分和抗蚀剂层的未曝光部分；去除抗蚀剂层的曝光部分和未曝光部分(例如，通过使曝光的抗蚀剂层处于显影溶液的环境中)，从而形成暴露部分掩蔽层的图案化抗蚀剂层；以及使用图案化的抗蚀剂层来蚀刻掩蔽层(具体地，掩蔽层的曝光部分)，以形成如图1A所示的芯轴120。在其他实例中，通过各种沉积工艺、光刻工艺、蚀刻工艺或它们的组合来形成芯轴120。沉积工艺包括：化学汽相沉积(CVD)、物理汽相沉积(PVD)、原子层沉积(ALD)、高密度等离子体CVD(HDPCVD)、金属有机CVD、远程等离子体CVD(RPCVD)、等离子体增强CVD(PECVD)、低压CVD(LPCVD)、原子层CVD(ALCVD)、常压CVD(APCVD)、电镀、其他沉积方法或它们的组合。光刻工艺可以包括抗蚀剂涂覆(例如，旋涂)、软烘、掩模对准、曝光、曝光后烘焙、显影抗蚀剂、冲洗、干燥(例如，硬烘)、其他光刻工艺或它们的组合。可选地，可以通过其他方法实施或替换光刻工艺，例如，无掩模光刻、电子束写入、离子束写入和/或纳米压印技术。蚀刻工艺包括干蚀刻、湿蚀刻、其他蚀刻方法或它们的组合。
在图1B中，在衬底110的上方形成隔离件130，使得每一个芯轴120都被隔离件130围绕；以及在图1C中，例如通过蚀刻工艺去除芯轴120，使得隔离件130保持设置在衬底110上方。隔离件130包括图案化或掩蔽材料，在本实施例中为氮化硅(SiN)。其他实例包括抗蚀剂材料、多晶硅、氧化硅、其他图案化或掩蔽材料或者它们的组合。通过各种沉积工艺、光刻工艺、蚀刻工艺或它们的组合(例如，本文所述的工艺)来形成隔离件130。每个芯轴120的相对侧壁上的隔离件130的宽度小于每个芯轴120的宽度。每个芯轴120的相对侧壁上的隔离件还通过小于芯轴120的间距的间距相互隔开。如下文中进一步描述的，隔离件130用于形成集成电路器件100的鳍结构，并且下文中将其称作鳍130。
期望将图1C和图1D所示的鳍130的组图案化为预定的非矩形图案。如下面进一步所论述的，通常在对鳍130进行成型时产生困难，尤其是对鳍进行端部切割以使鳍的端部均匀对准，并且不包括边角的倒角(特别是在非矩形图案的内角的周围)。
现参考图2，将在本实施例中使用掩模210以去除一些或所有鳍130(线切割)，从而形成非矩形图案。可以理解，如本领域所公知的，可以根据对光刻和掩模制造的普遍理解来修改掩模。例如，本实例将实施正性光刻胶，其中，掩模上的亮色调用于曝光光刻胶上的相应图案。当然，也可以使用负性光刻胶，从而使掩模上的暗色调用于曝光光刻胶上的相应部分。此外，如本领域已知的，还可以使用诸如光学邻近校正的公知技术。另外，下面所论述的光刻工艺可以是多种类型并且可以包括多个步骤，诸如上面参考图1A至图1C所论述的。
可以以各种技术形成掩模210。例如，可以使用二元技术(binarytechnology)形成掩模。二元掩模包括透明衬底(例如，熔融石英)和涂覆在掩模的不透明区域中的不透明材料(例如，铬)。在另一实例中，使用相移技术来形成掩模，其中，形成在掩模上的图案中的各种部件被配置成具有适当相差，以提高分辨率和成像质量。在各个实例中，相移掩模(PSM)可以为衰减PSM或交替PSM。
掩模210被用于线切割，并提供本实施例所期望的非矩形图案212。非矩形的图案212被示为暗色调，而周围的区域被示为亮色调。非矩形的图案212将用于形成器件100上的鳍130的相应图案。
参考图3A、图3B和图4，在本实施例中，在SiN鳍130的上方和衬底110的上方，向器件100涂敷光刻胶层，其中，衬底包括Si层142和SiO2层144。在光刻工艺中使用掩模210以在器件上形成非矩形光刻胶图案304。非矩形图案与掩模210的图案212(图2)相对应。然后，执行SiN选择性蚀刻工艺(不选择SiO2)来去除部分SiN鳍130，从而制造如图4所示的非矩形鳍图案。一些蚀刻剂实例为CF4或SF6。然后，去除非矩形光刻胶图案304。如图4所示，鳍130的端部410是不规则的，其中，鳍的端部既不具有恰当长度也不均匀。如图4所示，还应该注意，图案304的内角是弯曲的。这至少部分地归因于光刻分辨率(lithography resolution)的限制，尤其在图案边角周围。
现参考图5，在本实施例中使用掩模520以将鳍130的端部切割成非矩形图案。可以在已经使用掩模210(图2)进行线切割之后使用掩模520，或者可以单独使用掩模520来执行线切割和端部切割。可以理解，如本领域所公知的(诸如上面参考图2所论述的)，可以根据对光刻和掩模制造的普遍理解来修改掩模。此外，如上面参考图2所论述的，还可以在各种技术中形成掩模210。掩模210用于进行端部切割，并提供本实施例所期望的非矩形图案。
如图所示，掩模520包括在相交区域中相互非常接近的两个矩形图案522和524。在两个图案522和524之间的相交区域中具有亚分辨率部件(sub-resolution feature)526。亚分辨率部件526具有诸如大小或形状的特性通常认为在相应光刻工艺的分辨率局限范围以外。在本实施例中，亚分辨率部件526是通常用于光学邻近校正(OPC)的部件，其与本领域公知的散射条类似。通过在相交区域中设置为与两个图案522、524相邻，亚分辨率部件526引入相反邻近效应(counter proximity effect)，有时称为隔离/密集邻近效应。如下面更为详细所论述的，亚分辨率部件526的使用对形成在器件上的最终图案产生了独特的效果。
参考图6和图7，在本实施例中，在SiN鳍130的上方和衬底110的上方，将光刻胶层涂敷至器件100，其中，衬底包括Si层142和SiO2层144。在光刻工艺中使用掩模520以在器件上形成非矩形光刻胶图案604。非矩形图案相应于掩模520的图案(图5)。利用掩模520上存在的亚分辨率部件526来连接图案522和524。在曝光之后，亚分辨率部件526不会在衬底上产生图案化线，因为其是辅助图案。在没有亚分辨率部件526的情况下，将出现如上面所论述的端部410(图4)中的边角倒角。利用亚分辨率部件526，边角倒角被减小。然后，执行SiN选择性蚀刻工艺(不选择SiO2)以去除非矩形图案外的部分SiN鳍130，从而产生图7所示的非矩形鳍图案。然后，去除非矩形光刻胶图案604。如图7所示，鳍130的端部710不像图4所示那样不规则，而是相对较为均匀。如图7所示，还应该注意，图案的内角不像图4那样弯曲。这至少部分归因于亚分辨率部件526。
现参考图8和图9，在另一个实施例中，将使用掩模820来去除图1D的一些或所有的鳍130(线切割)，并且掩模920被用于进一步切割剩余鳍的端部，从而形成非矩形图案。可以理解，如本领域所公知的(诸如上面参考图2所论述的)，可以根据对光刻和掩模制造的普遍理解来修改掩模820、920。此外，如上面参考图2所论述的，还可以在各种技术中形成掩模820、920。掩模820、920提供了本实施例所期望的非矩形图案。掩模820包括非矩形图案822，而掩模920包括两个非矩形图案922和924。
参考图10和图11，在本实施例中，在SiN鳍130的上方和衬底110的上方，将光刻胶层涂敷至器件100。在光刻工艺中使用掩模820以在器件100上形成非矩形光刻胶图案1012。非矩形图案相应于掩模820的图案(图8)。然后，执行SiN选择性蚀刻工艺(不选择SiO2)来去除非矩形图案外的部分SiN鳍130，从而产生图11所示的非矩形鳍图案。然后，去除非矩形光刻胶图案604。如图11所示，一些鳍130被去除。剩余的一些鳍具有在边角周围弯曲的端部1120。
参考图12和图13，接下来，在剩余SiN鳍130的上方，将第二光刻胶层涂敷至器件100。在光刻工艺中使用掩模920以在器件100上形成非矩形光刻胶图案1210。非矩形图案相应于掩模920的图案(图9)。然后，执行SiN选择性蚀刻工艺(不选择SiO2)来切割非矩形图案外的SiN鳍130，从而产生图13所示的非矩形鳍图案。然后，去除非矩形光刻胶图案604。如图13所示，鳍130的端部1320不像图11那样不规则，而是相对较为均匀。如图13所示，还应该注意，图案的内角不像图11那样弯曲。
针对上面所讨论的，存在多种额外的可选实施例。参考图14，可以使用掩模1420代替掩模920(图9)来切割剩余鳍130的端部，从而形成非矩形图案。掩模1420包括分别与图案922，924的右侧(如图9所示)相对应的图案1422和1424。然而，提供单个线切割图案1426以与图案922、924的左侧(如图9所示)。可以理解，如本领域所公知的(诸如上面参考图2所论述的)，可以根据对光刻和掩模制造的普遍理解来修改掩模。
在另外的实施例中，可以使用电子束图案化器件来代替掩模920(图9)切割剩余鳍130的端部，从而形成非矩形图案。电子束图案化可以改善不规则和倒角的线端部，尽管减小量很小。
在其他实施例中，可使用硬掩模工艺来形成上述图案。例如，可以将第一非晶硅层形成在包括鳍的器件的上方，然后在其上沉积光刻胶层。如上面所论述地对光刻胶层进行图案化，随后对下面的非晶硅层进行图案化以形成硬掩模。使用图案化的硬掩模，如上所述继续下面层的图案化。
在其他实施例中，可以使用上述的掩模和方法来制造鳍以外的其他部件，诸如，沟槽图案。
现参考图15，示出了具有电路区域1502的器件100，电路区域包括多个非矩形区域1504和1506。在器件100的实施例中，非矩形区域1504可以包括n型FinFET，而非矩形区域1506可以包括p型FinFET。可以理解，尽管非矩形区域1504、1506被示为U形，但是还可以使用其他非矩形形状，包括L形、E形等。
上面论述了若干实施例的部件，使得本领域普通技术人员可以更好地理解本发明的各个方面。本领域普通技术人员应该理解，可以很容易地使用本发明作为基础来设计或更改其他用于达到与这里所介绍实施例相同的目的和/或实现相同优点的处理和结构。本领域普通技术人员也应该意识到，这种等效构造并不背离本发明的精神和范围，并且在不背离本发明的精神和范围的情况下，可以进行多种变化、替换以及改变。

Claims (10)

1.一种用于以非矩形图案对多个部件进行图案化的方法，所述方法包括：
提供包括具有多个伸长凸起的表面的衬底，伸长凸起在第一方向上延伸；
在所述表面的上方和所述多个伸长凸起的上方形成第一层；
利用端部切割掩模对所述第一层进行图案化，所述端部切割掩模包括两个紧邻的图案，亚分辨率部件被定位并配置为使得所述第一层上的合成图案包括所述两个紧邻的图案和位于它们之间的连接部分；
使用所述第一层上的图案切割所述伸长凸起的端部。
2.根据权利要求1所述的方法，其中，所述多个部件是鳍式场效应晶体管(FinFET)器件的鳍。
3.根据权利要求1所述的方法，其中，所述多个部件是沟槽。
4.根据权利要求1所述的方法，进一步包括：
在形成所述第一层之前，在所述表面的上方和所述多个伸长凸起的上方形成第二层；
利用线切割掩模对所述第二层进行图案化；
使用所述第二层上的图案去除所述伸长凸起的子集。
5.一种方法，包括：
提供包括具有第一层和第二层的表面的衬底；
在所述第一层和所述第二层上方的第三层中形成第一伸长凸起、第二伸长凸起和第三伸长凸起；
在三个伸长凸起的上方形成第一图案化层；
蚀刻这三个伸长凸起以形成第一图案，所述第一图案去除所述第二伸长凸起相对较大的部分以及所述第一伸长凸起和所述第三伸长凸起相对较小的部分，从而通过较大部分和较小部分形成一个区域；
在伸长凸起的所述第一图案的上方形成第二图案化层，第二图案包括位于所述区域上方的至少两个分离的矩形子图案；以及
蚀刻在所述区域中延伸的所述第一伸长凸起和所述第三伸长凸起的端部。
6.根据权利要求5所述的方法，其中，所述多个伸长凸起在第一方向上延伸，并且所述第二图案化层被配置成为在垂直于所述第一方向的方向上对所述伸长凸起进行端部切割。
7.根据权利要求6所述的方法，其中，所述第二图案包括位于所述区域上方的三个分离的矩形子图案。
8.一种用于具有限定分辨率的光刻系统的掩模组，所述掩模组包括第一掩模和第二掩模，所述第一掩模包括：
第一图案区域和第二图案区域，大于所述限定分辨率，其中，所述第一图案区域的部分和所述第二图案区域的部分被定位为相互接近并通过相交区域分隔；
亚分辨率部件，位于所述第一图案区域和所述第二图案区域之间以及所述相交区域之中；
其中，所述亚分辨率部件的大小和形状以及所述相交区域的大小使得当在所述光刻系统中使用掩模时，所得到的图案包括通过所述相交区域相互互连的所述第一图案区域和所述第二图案区域。
9.根据权利要求8所述的掩模组，其中，所述第二掩模包括：
第三图案区域，形状与所述第一图案区域和所述第二图案区域以及所述相交区域的组合形状类似。
10.根据权利要求9所述的掩模组，其中，所述第二掩模用于对多个鳍进行线切割，并且所述第一掩模用于对所述多个鳍进行端部切割。
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CN104576732A (zh) * 2013-10-21 2015-04-29 中芯国际集成电路制造(上海)有限公司 一种寄生FinFET的横向双扩散半导体器件
CN105789049A (zh) * 2014-09-12 2016-07-20 台湾积体电路制造股份有限公司 图案化鳍式场效应晶体管（finfet）器件的多个部件的方法
US10049885B2 (en) 2012-02-09 2018-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method for patterning a plurality of features for fin-like field-effect transistor (FinFET) devices
CN109254494A (zh) * 2017-07-12 2019-01-22 中芯国际集成电路制造(上海)有限公司 一种光学邻近修正方法
CN113823600A (zh) * 2020-06-18 2021-12-21 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、掩膜版

Families Citing this family (1171)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8367498B2 (en) 2010-10-18 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Fin-like field effect transistor (FinFET) device and method of manufacturing same
US9059093B2 (en) * 2013-11-15 2015-06-16 Globalfoundries Inc. Forming finfet cell with fin tip and resulting device
US9853154B2 (en) 2014-01-24 2017-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Embedded source or drain region of transistor with downward tapered region under facet region
US9773696B2 (en) 2014-01-24 2017-09-26 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9287131B2 (en) * 2014-02-21 2016-03-15 Globalfoundries Inc. Methods of patterning line-type features using a multiple patterning process that enables the use of tighter contact enclosure spacing rules
US9281363B2 (en) 2014-04-18 2016-03-08 Taiwan Semiconductor Manufacturing Company Ltd. Circuits using gate-all-around technology
JP6366412B2 (ja) * 2014-08-01 2018-08-01 キヤノン株式会社 パターン形成方法
US9385197B2 (en) 2014-08-29 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor structure with contact over source/drain structure and method for forming the same
US9818744B2 (en) 2014-09-04 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Leakage current suppression methods and related structures
US9472653B2 (en) 2014-11-26 2016-10-18 Samsung Electronics Co., Ltd. Method for fabricating semiconductor device
KR102347185B1 (ko) * 2015-02-03 2022-01-04 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9991343B2 (en) 2015-02-26 2018-06-05 Taiwan Semiconductor Manufacturing Company Ltd. LDD-free semiconductor structure and manufacturing method of the same
US9768261B2 (en) 2015-04-17 2017-09-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US9991132B2 (en) 2015-04-17 2018-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Lithographic technique incorporating varied pattern materials
US9391074B1 (en) 2015-04-21 2016-07-12 International Business Machines Corporation Structure for FinFET fins
US9553088B1 (en) * 2015-09-24 2017-01-24 International Business Machines Corporation Forming semiconductor device with close ground rules
US9954081B2 (en) 2015-12-15 2018-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor, semiconductor device and fabricating method thereof
US9722081B1 (en) 2016-01-29 2017-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device and method of forming the same
US9768170B2 (en) 2016-02-05 2017-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and method for fabricating the same
US9847330B2 (en) 2016-02-05 2017-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and method for fabricating the same
US10002867B2 (en) 2016-03-07 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor structure and manufacturing method thereof
US9893120B2 (en) 2016-04-15 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US10079291B2 (en) 2016-05-04 2018-09-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor structure and manufacturing method thereof
US9704859B1 (en) 2016-05-06 2017-07-11 International Business Machines Corporation Forming semiconductor fins with self-aligned patterning
US10032877B2 (en) 2016-08-02 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of forming same
US10157918B2 (en) 2016-08-03 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9741823B1 (en) 2016-10-28 2017-08-22 Internation Business Machines Corporation Fin cut during replacement gate formation
US10840350B2 (en) 2016-10-31 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Nanolaminate structure, semiconductor device and method of forming nanolaminate structure
US10326003B2 (en) 2016-11-28 2019-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and methods of forming
US10879354B2 (en) 2016-11-28 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and forming method thereof
US10700181B2 (en) 2016-11-28 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (finFET) device structure and method for forming the same
US10276677B2 (en) 2016-11-28 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10553720B2 (en) 2016-11-29 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of removing an etch mask
US10510851B2 (en) 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure
US10170378B2 (en) 2016-11-29 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gate all-around semiconductor device and manufacturing method thereof
US10515951B2 (en) 2016-11-29 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10164066B2 (en) 2016-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices and methods of forming
US10008497B2 (en) 2016-11-29 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10453943B2 (en) 2016-11-29 2019-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. FETS and methods of forming FETS
US10115808B2 (en) 2016-11-29 2018-10-30 Taiwan Semiconductor Manufacturing Company, Ltd. finFET device and methods of forming
US9991165B1 (en) 2016-11-29 2018-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetric source/drain epitaxy
US10510888B2 (en) 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9953875B1 (en) 2016-11-30 2018-04-24 Taiwan Semiconductor Manufacturing Company Contact resistance control in epitaxial structures of finFET
US10707328B2 (en) 2016-11-30 2020-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming epitaxial fin structures of finFET
US10269906B2 (en) 2016-11-30 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having two spacers
US10672824B2 (en) 2016-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor
US10453741B2 (en) 2016-12-13 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device contact
DE102017113681A1 (de) 2016-12-14 2018-06-14 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-bauelement mit luft-abstandshalter
US10522642B2 (en) 2016-12-14 2019-12-31 Taiwan Semiconductor Manufacturing Co. Ltd. Semiconductor device with air-spacer
US10037912B2 (en) 2016-12-14 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10269646B2 (en) 2016-12-15 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10522694B2 (en) 2016-12-15 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of manufacturing semiconductor device
US10879370B2 (en) 2016-12-15 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Etching back and selective deposition of metal gate
US10510762B2 (en) 2016-12-15 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain formation technique for fin-like field effect transistor
US11476349B2 (en) 2016-12-15 2022-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structures and methods of forming the same
US10002796B1 (en) 2016-12-15 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. Dual epitaxial growth process for semiconductor device
TWI746673B (zh) 2016-12-15 2021-11-21 台灣積體電路製造股份有限公司 鰭式場效電晶體裝置及其共形傳遞摻雜方法
US10497811B2 (en) 2016-12-15 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structures and methods of forming the same
US10276691B2 (en) 2016-12-15 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Conformal transfer doping method for fin-like field effect transistor
US10418252B2 (en) 2016-12-16 2019-09-17 Taiwan Semiconductor Manufacturing Co, Ltd. Fin-like field effect transistor patterning methods for increasing process margins
US10121675B2 (en) 2016-12-29 2018-11-06 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device and a method for fabricating the same
WO2018125212A1 (en) * 2016-12-30 2018-07-05 Intel Corporation Fin patterning for semiconductor devices
US10325911B2 (en) 2016-12-30 2019-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10516030B2 (en) 2017-01-09 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs and methods forming same
US10170374B2 (en) 2017-03-23 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US11923252B2 (en) 2017-03-23 2024-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for manufacturing the same
US10804375B2 (en) 2017-03-23 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US10304945B2 (en) 2017-03-24 2019-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. High-speed semiconductor device and method for forming the same
US10950605B2 (en) 2017-03-24 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US10090325B1 (en) 2017-03-31 2018-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit cells having separated gate electrodes
US10355095B2 (en) 2017-03-31 2019-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with composite gate helmet
KR102330087B1 (ko) 2017-04-03 2021-11-22 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US10056473B1 (en) 2017-04-07 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10163731B2 (en) 2017-04-12 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET semiconductor structure having hybrid substrate and method of fabricating the same
US10269621B2 (en) 2017-04-18 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs and methods forming same
US10312332B2 (en) 2017-04-18 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US10483266B2 (en) 2017-04-20 2019-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Flexible merge scheme for source/drain epitaxy regions
US10483380B2 (en) 2017-04-20 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10062784B1 (en) 2017-04-20 2018-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned gate hard mask and method forming same
US10186456B2 (en) 2017-04-20 2019-01-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming contact plugs with reduced corrosion
US10079229B1 (en) 2017-04-24 2018-09-18 International Business Machines Corporation Resistor fins
US10475908B2 (en) 2017-04-25 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10872980B2 (en) 2017-04-25 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10373879B2 (en) 2017-04-26 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with contracted isolation feature and formation method thereof
US10332786B2 (en) 2017-04-27 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing a semiconductor device
US10157997B2 (en) 2017-04-27 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods of forming the same
US10319832B2 (en) 2017-04-28 2019-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US10535520B2 (en) 2017-04-28 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Fin patterning methods for increased process margins
US10141225B2 (en) 2017-04-28 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gates of transistors having reduced resistivity
US10170318B2 (en) 2017-04-28 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned contact and manufacturing method thereof
US10115825B1 (en) 2017-04-28 2018-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for FinFET device with asymmetric contact
DE102017122702B4 (de) 2017-04-28 2023-11-09 Taiwan Semiconductor Manufacturing Co. Ltd. Struktur und Verfahren für FinFET-Vorrichtung mit asymmetrischem Kontakt
US10157785B2 (en) 2017-05-01 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10332965B2 (en) 2017-05-08 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10043712B1 (en) 2017-05-17 2018-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US10050149B1 (en) 2017-05-18 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure for semiconductor device
US10665569B2 (en) 2017-05-25 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical transistor device and method for fabricating the same
US10269800B2 (en) 2017-05-26 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical gate semiconductor device with steep subthreshold slope
US10269636B2 (en) 2017-05-26 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10636910B2 (en) 2017-05-30 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method of forming the same
US10522392B2 (en) 2017-05-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10163621B1 (en) 2017-05-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for FinFET devices
US10163628B1 (en) 2017-05-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Lattice-mismatched semiconductor substrates with defect reduction
US10147787B1 (en) 2017-05-31 2018-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US9991268B1 (en) 2017-06-08 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell structure
US9991262B1 (en) 2017-06-15 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device on hybrid substrate and method of manufacturing the same
US10727131B2 (en) 2017-06-16 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain epitaxy re-shaping
US10283414B2 (en) 2017-06-20 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation manufacturing method for semiconductor structures
US10510840B2 (en) 2017-06-20 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. GAA FET with u-shaped channel
US11334703B2 (en) 2017-06-29 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit layouts with fill feature shapes
US10269940B2 (en) 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10483267B2 (en) 2017-06-30 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Eight-transistor static random-access memory, layout thereof, and method for manufacturing the same
US10516037B2 (en) 2017-06-30 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming shaped source/drain epitaxial layers of a semiconductor device
US10347764B2 (en) 2017-06-30 2019-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
US10720358B2 (en) 2017-06-30 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a liner layer with a configured profile and method of fabricating thereof
TWI743252B (zh) 2017-06-30 2021-10-21 台灣積體電路製造股份有限公司 鰭狀場效電晶體裝置與其形成方法
DE102018104944A1 (de) 2017-06-30 2019-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiter-Bauelement mit einer Auskleidungsschicht mit einem konfigurierten Profil und Verfahren zu dessen Herstellung
US10468529B2 (en) 2017-07-11 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with etch stop layer
US10181524B1 (en) 2017-07-14 2019-01-15 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical transistor device and method for fabricating the same
US10211307B2 (en) 2017-07-18 2019-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of manufacturing inner spacers in a gate-all-around (GAA) FET through multi-layer spacer replacement
US10727226B2 (en) 2017-07-18 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US10157988B1 (en) 2017-07-18 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with dual spacers and method for forming the same
US10134640B1 (en) 2017-07-18 2018-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with semiconductor wire
US10290635B2 (en) 2017-07-26 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Buried interconnect conductor
US10283623B2 (en) 2017-07-27 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with gate stacks
US10141430B1 (en) 2017-07-27 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Fin structures with uniform threshold voltage distribution and method of making the same
DE102017126027B4 (de) 2017-07-31 2022-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Metallgatestruktur und Verfahren
US10283503B2 (en) 2017-07-31 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure and methods thereof
US10510875B2 (en) 2017-07-31 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain structure with reduced contact resistance and enhanced mobility
US10685884B2 (en) 2017-07-31 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including a Fin-FET and method of manufacturing the same
US10269624B2 (en) 2017-07-31 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Contact plugs and methods of forming same
US10515952B2 (en) 2017-08-04 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure and method for forming the same
US10833152B2 (en) 2017-08-15 2020-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10515850B2 (en) 2017-08-25 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method and IC design with non-linear power rails
US10504898B2 (en) 2017-08-28 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field-effect transistor structure and method for forming the same
US10529833B2 (en) 2017-08-28 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with a fin and gate structure and method making the same
US10403714B2 (en) 2017-08-29 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Fill fins for semiconductor devices
US10535654B2 (en) 2017-08-30 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate with slanted sidewalls
US10685880B2 (en) 2017-08-30 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for reducing contact depth variation in semiconductor fabrication
US10699956B2 (en) 2017-08-30 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10403550B2 (en) 2017-08-30 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10535525B2 (en) 2017-08-31 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US10297508B2 (en) 2017-08-31 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10163904B1 (en) 2017-08-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure
US10497577B2 (en) 2017-08-31 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method
US10121870B1 (en) 2017-08-31 2018-11-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with strain-relaxed buffer
US10374059B2 (en) 2017-08-31 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with nanowires
US10164053B1 (en) 2017-08-31 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10629679B2 (en) 2017-08-31 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10290548B2 (en) 2017-08-31 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with semiconductor wire
US10276718B2 (en) 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET having a relaxation prevention anchor
US10332985B2 (en) 2017-08-31 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10276720B2 (en) 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming fin field effect transistor (FINFET) device structure
US10475654B2 (en) 2017-08-31 2019-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Wrap-around contact plug and method manufacturing same
US10483378B2 (en) 2017-08-31 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial features confined by dielectric fins and spacers
US10522680B2 (en) 2017-08-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet semiconductor device structure with capped source drain structures
US10515896B2 (en) 2017-08-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure for semiconductor device and methods of fabrication thereof
US10276445B2 (en) 2017-08-31 2019-04-30 Taiwan Semiconductor Manfacturing Co., Ltd. Leakage reduction methods and structures thereof
US10446555B2 (en) 2017-08-31 2019-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Buried metal track and methods forming same
US10374058B2 (en) 2017-09-15 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US10361133B2 (en) 2017-09-18 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. High-K metal gate and method for fabricating the same
US10453752B2 (en) 2017-09-18 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a gate-all-around semiconductor device
US10679988B2 (en) 2017-09-18 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including FinFETS having different channel heights and manufacturing method thereof
US10505040B2 (en) 2017-09-25 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device having a gate with ferroelectric layer
US10868181B2 (en) 2017-09-27 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with blocking layer and method for forming the same
US10468275B2 (en) 2017-09-27 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor fabrication with electrochemical apparatus
US10269914B2 (en) 2017-09-27 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10700177B2 (en) 2017-09-27 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with low resistivity contact structure and method for forming the same
US10535736B2 (en) 2017-09-28 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Fully strained channel
US10763104B2 (en) 2017-09-28 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming differential etch stop layer using directional plasma to activate surface on device structure
US10153278B1 (en) 2017-09-28 2018-12-11 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor structure and manufacturing method thereof
US10403545B2 (en) 2017-09-28 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Power reduction in finFET structures
US10686074B2 (en) 2017-09-28 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same
US10516032B2 (en) 2017-09-28 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device
US10515687B2 (en) 2017-09-28 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Strap cell design for static random access memory (SRAM) array
US10325993B2 (en) 2017-09-28 2019-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. Gate all around device and fabrication thereof
US10763114B2 (en) 2017-09-28 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating gate oxide of semiconductor device
US10074558B1 (en) 2017-09-28 2018-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with controlled air gaps
US10283639B2 (en) 2017-09-28 2019-05-07 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same
US10636673B2 (en) 2017-09-28 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US10297636B2 (en) 2017-09-28 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating complementary metal-oxide-semiconductor image sensor
US10157790B1 (en) 2017-09-28 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US10497624B2 (en) 2017-09-29 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10505021B2 (en) 2017-09-29 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. FinFet device and method of forming the same
US10509334B2 (en) 2017-09-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods and apparatus for removing contamination from lithographic tool
US10510580B2 (en) 2017-09-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy fin structures and methods of forming same
US10483372B2 (en) 2017-09-29 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Spacer structure with high plasma resistance for semiconductor devices
US10804367B2 (en) 2017-09-29 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Gate stacks for stack-fin channel I/O devices and nanowire channel core devices
US10269965B1 (en) 2017-10-25 2019-04-23 Taiwan Semiconductor Manufacturing Company Ltd. Multi-gate semiconductor device and method for forming the same
US10672742B2 (en) 2017-10-26 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10535737B2 (en) 2017-10-27 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11380803B2 (en) 2017-10-30 2022-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10847634B2 (en) 2017-10-30 2020-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and method of forming the same
US10347720B2 (en) 2017-10-30 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Doping for semiconductor device with conductive feature
US10217815B1 (en) 2017-10-30 2019-02-26 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit device with source/drain barrier
US10868127B2 (en) 2017-10-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure and manufacturing method for the same
US10522418B2 (en) 2017-10-30 2019-12-31 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
US10867866B2 (en) 2017-10-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10714592B2 (en) 2017-10-30 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10818777B2 (en) 2017-10-30 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11444173B2 (en) 2017-10-30 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with salicide layer and method for forming the same
US10325912B2 (en) 2017-10-30 2019-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure cutting process and structures formed thereby
US10535738B2 (en) 2017-10-31 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method of the same
US10276693B1 (en) 2017-10-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10163623B1 (en) 2017-10-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Etch method with surface modification treatment for forming semiconductor structure
US10355105B2 (en) 2017-10-31 2019-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistors and methods of forming the same
US10629497B2 (en) 2017-11-02 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device structure and method for enlarging gap-fill window
US10872762B2 (en) 2017-11-08 2020-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming silicon oxide layer and semiconductor structure
US10403551B2 (en) 2017-11-08 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain features with an etch stop layer
US10431696B2 (en) 2017-11-08 2019-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with nanowire
US11404413B2 (en) 2017-11-08 2022-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US10439135B2 (en) 2017-11-09 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. VIA structure and methods of forming the same
US10367078B2 (en) 2017-11-09 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and FinFET devices having shielding layers
US10680084B2 (en) 2017-11-10 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial structures for fin-like field effect transistors
US10847622B2 (en) 2017-11-13 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming source/drain structure with first and second epitaxial layers
US10727178B2 (en) 2017-11-14 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Via structure and methods thereof
US10629708B2 (en) 2017-11-14 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with barrier layer and method for forming the same
US10283624B1 (en) 2017-11-14 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US10964590B2 (en) 2017-11-15 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Contact metallization process
US10468530B2 (en) 2017-11-15 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with source/drain multi-layer structure and method for forming the same
US10840358B2 (en) 2017-11-15 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor structure with source/drain structure having modified shape
US10355102B2 (en) 2017-11-15 2019-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10483168B2 (en) 2017-11-15 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Low-k gate spacer and formation thereof
US10680106B2 (en) 2017-11-15 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming source/drain epitaxial stacks
US10515809B2 (en) 2017-11-15 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Selective high-K formation in gate-last process
US10707318B2 (en) 2017-11-15 2020-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10468527B2 (en) 2017-11-15 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure and methods of fabricating thereof
US10269576B1 (en) 2017-11-15 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Etching and structures formed thereby
US10515948B2 (en) 2017-11-15 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including vertical routing structure and method for manufacturing the same
US10396184B2 (en) 2017-11-15 2019-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device fins
US10170322B1 (en) 2017-11-16 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition based process for contact barrier layer
US10978351B2 (en) 2017-11-17 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Etch stop layer between substrate and isolation structure
US10629693B2 (en) 2017-11-17 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with barrier layer and method for forming the same
US10269648B1 (en) 2017-11-17 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating a semiconductor device structure
US10658508B2 (en) 2017-11-17 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with low resistance contact
US10510619B2 (en) 2017-11-17 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing the same
US10867859B2 (en) 2017-11-17 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having isolation structures with liners
US10727117B2 (en) 2017-11-20 2020-07-28 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
US11037924B2 (en) 2017-11-21 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming source/drain contacts
US10504990B2 (en) 2017-11-21 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation features and methods of fabricating the same
US10672613B2 (en) 2017-11-22 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming semiconductor structure and semiconductor device
US10867809B2 (en) 2017-11-22 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Laser anneal process
US10497628B2 (en) 2017-11-22 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming epitaxial structures in fin-like field effect transistors
US10418453B2 (en) 2017-11-22 2019-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Forming metal contacts on metal gates
US10867986B2 (en) 2017-11-24 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device having fin structure
US10361279B2 (en) 2017-11-24 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing FinFET structure with doped region
US10340190B2 (en) 2017-11-24 2019-07-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10276449B1 (en) 2017-11-24 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming fin field effect transistor (FinFET) device structure
US10374038B2 (en) 2017-11-24 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device source/drain region with arsenic-containing barrier region
US10971493B2 (en) 2017-11-27 2021-04-06 Taiwan Semiconductor Manufacturing Company Ltd. Integrated circuit device with high mobility and system of forming the integrated circuit
US10714475B2 (en) 2017-11-27 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10332789B2 (en) 2017-11-27 2019-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with TiN adhesion layer for forming a contact plug
US10658362B2 (en) 2017-11-27 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor component and fabricating method thereof
US10840154B2 (en) 2017-11-28 2020-11-17 Taiwan Semiconductor Manufacturing Co.. Ltd. Method for forming semiconductor structure with high aspect ratio
US10790142B2 (en) 2017-11-28 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Selective capping processes and structures formed thereby
US10714334B2 (en) 2017-11-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure
US10777466B2 (en) 2017-11-28 2020-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor Fin cutting process and structures formed thereby
US10804378B2 (en) 2017-11-29 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method for semiconductor device fabrication with improved epitaxial source/drain proximity control
US10510889B2 (en) 2017-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. P-type strained channel in a fin field effect transistor (FinFET) device
US10840376B2 (en) 2017-11-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method with enhanced gate contact and threshold voltage
US10312089B1 (en) 2017-11-29 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for controlling an end-to-end distance in semiconductor device
US11114549B2 (en) 2017-11-29 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure cutting process and structures formed thereby
US10164048B1 (en) 2017-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming source/drain contacts
US10510838B2 (en) 2017-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. High surface dopant concentration formation processes and structures formed thereby
US10177038B1 (en) 2017-11-30 2019-01-08 Taiwan Semiconductor Manufacturing Co., Ltd. Prevention of contact bottom void in semiconductor fabrication
US10460994B2 (en) 2017-11-30 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Residue-free metal gate cutting for fin-like field effect transistor
US10629749B2 (en) 2017-11-30 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of treating interfacial layer on silicon germanium
US10672889B2 (en) 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10366982B2 (en) 2017-11-30 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Structure with embedded memory device and contact isolation scheme
US10804180B2 (en) 2017-11-30 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US10475929B2 (en) 2017-11-30 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10510874B2 (en) * 2017-11-30 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US10319581B1 (en) 2017-11-30 2019-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate process for reducing transistor spacing
DE102018128925B4 (de) 2017-11-30 2024-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung
US10861745B2 (en) 2017-11-30 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10446669B2 (en) 2017-11-30 2019-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain surface treatment for multi-gate field effect transistors
US11901190B2 (en) * 2017-11-30 2024-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of patterning
US10923595B2 (en) 2017-11-30 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a SiGe epitaxial layer containing Ga
US10847413B2 (en) 2017-11-30 2020-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming contact plugs for semiconductor device
US10504899B2 (en) 2017-11-30 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Transistors with various threshold voltages and method for manufacturing the same
US10497778B2 (en) 2017-11-30 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10748774B2 (en) 2017-11-30 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10516039B2 (en) 2017-11-30 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10515849B2 (en) 2017-11-30 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device, interconnection structure and method for forming the same
US10361120B2 (en) 2017-11-30 2019-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure
US10867833B2 (en) 2017-11-30 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Buried metal for FinFET device and method
US11011618B2 (en) 2017-11-30 2021-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit devices with gate seals
US10700066B2 (en) 2017-11-30 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
DE102018106581B4 (de) 2017-11-30 2020-07-09 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-Bauelement und Verfahren zu dessen Herstellung
US10756114B2 (en) 2017-12-28 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor circuit with metal structure and manufacturing method
US10461171B2 (en) 2018-01-12 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stacks
US10658225B2 (en) 2018-01-19 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET devices and methods of forming the same
US10608094B2 (en) 2018-01-23 2020-03-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US10651292B2 (en) 2018-02-19 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Dual metal via for contact resistance reduction
US10867851B2 (en) 2018-02-26 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure and semiconductor device and method of forming the same
US10461078B2 (en) 2018-02-26 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Creating devices with multiple threshold voltage by cut-metal-gate process
US10522656B2 (en) 2018-02-28 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd Forming epitaxial structures in fin field effect transistors
US10535748B2 (en) 2018-03-01 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a contact with a silicide region
US11031286B2 (en) 2018-03-01 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure
US10468409B2 (en) 2018-03-14 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with oxidation-resist STI liner structure
US10475702B2 (en) 2018-03-14 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure using bottom-up filling deposition
US10943822B2 (en) 2018-03-15 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Forming gate line-end of semiconductor structures
US10290535B1 (en) 2018-03-22 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication with a passivation agent
US10867844B2 (en) 2018-03-28 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Wet cleaning with tunable metal recess for VIA plugs
US10804140B2 (en) 2018-03-29 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect formation and structure
US11056392B2 (en) 2018-03-29 2021-07-06 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices having gate stacks with protruding parts and method of forming the same
US10510776B2 (en) 2018-03-29 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with common active area and method for manufacturing the same
US10763363B2 (en) 2018-04-10 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gradient doped region of recessed fin forming a FinFET device
US10854715B2 (en) 2018-04-13 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Supportive layer in source/drains of FinFET devices
US10854714B2 (en) 2018-04-20 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium containing nanowires and methods for forming the same
US10522546B2 (en) 2018-04-20 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd FinFET devices with dummy fins having multiple dielectric layers
US11270994B2 (en) 2018-04-20 2022-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
US10629492B2 (en) 2018-04-27 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure having a dielectric gate and methods thereof
US10699943B2 (en) 2018-04-30 2020-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming contacts in a semiconductor device
US10867848B2 (en) 2018-04-30 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10276719B1 (en) 2018-04-30 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11245005B2 (en) 2018-05-14 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor structure with extended contact structure
US10522622B2 (en) 2018-05-14 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate semiconductor device and method for forming the same
US10685966B2 (en) 2018-05-16 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with contacting gate structures
US10756089B2 (en) 2018-05-16 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid semiconductor transistor structure and manufacturing method for the same
US11398476B2 (en) 2018-05-16 2022-07-26 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with hybrid fins
US10636878B2 (en) 2018-05-18 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Steep sloped vertical tunnel field-effect transistor
US10269655B1 (en) 2018-05-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10504775B1 (en) 2018-05-31 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming metal layer structures in semiconductor devices
US10529414B2 (en) 2018-05-31 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell having SiGe PMOS fin lines
US10529860B2 (en) 2018-05-31 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for FinFET device with contact over dielectric gate
US10825933B2 (en) 2018-06-11 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure and manufacturing method for the same
US10644125B2 (en) 2018-06-14 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gates and manufacturing methods thereof
US10522390B1 (en) 2018-06-21 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Shallow trench isolation for integrated circuits
US10522662B1 (en) 2018-06-22 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with T-shaped fin and method for forming the same
US11107902B2 (en) 2018-06-25 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric spacer to prevent contacting shorting
US10651314B2 (en) 2018-06-26 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Nanowire stack GAA device with inner spacer and methods for producing the same
US11043556B2 (en) 2018-06-26 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Local epitaxy nanofilms for nanowire stack GAA device
US10950434B2 (en) 2018-06-27 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of reducing gate spacer loss during semiconductor manufacturing
US10790391B2 (en) 2018-06-27 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain epitaxial layer profile
US10840153B2 (en) 2018-06-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Notched gate structure fabrication
US10665673B2 (en) 2018-06-28 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure with non-gated well tap cell
US11694933B2 (en) 2018-06-28 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming metal gate spacer
US11410890B2 (en) 2018-06-28 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial layers in source/drain contacts and methods of forming the same
US11081356B2 (en) 2018-06-29 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for metal gate cut and structure thereof
US11018053B2 (en) 2018-06-29 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with material modification and low resistance plug
US11315933B2 (en) 2018-06-29 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM structure and method for forming the same
US10672899B2 (en) 2018-06-29 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Tunnel field-effect transistor with reduced trap-assisted tunneling leakage
US11355339B2 (en) 2018-06-29 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Forming nitrogen-containing layers as oxidation blocking layers
US11244898B2 (en) 2018-06-29 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd Integrated circuit interconnect structures with air gaps
US10468500B1 (en) 2018-06-29 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET fabrication methods
US11081403B2 (en) 2018-06-29 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming contact features in field-effect transistors
US11011623B2 (en) 2018-06-29 2021-05-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method for increasing germanium concentration of FIN and resulting semiconductor device
US11031239B2 (en) 2018-06-29 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium nanosheets and methods of forming the same
US11437497B2 (en) 2018-06-29 2022-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10868128B2 (en) 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Ohmic contact structure, semiconductor device including an ohmic contact structure, and method for forming the same
US10840375B2 (en) 2018-06-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with channel-strain liner
US10755917B2 (en) 2018-06-29 2020-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment for adhesion improvement
US11296225B2 (en) 2018-06-29 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US10861750B2 (en) 2018-07-02 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10872825B2 (en) 2018-07-02 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10998310B2 (en) 2018-07-09 2021-05-04 Taiwan Semiconductor Manufacturing Company Ltd. Fins with wide base in a FINFET
US11114566B2 (en) 2018-07-12 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10541175B1 (en) 2018-07-13 2020-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with fin structures
US11127631B2 (en) 2018-07-13 2021-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with contact structures
US10755945B2 (en) 2018-07-16 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Metal contacts on metal gates and methods thereof
US10672870B2 (en) 2018-07-16 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10949597B2 (en) 2018-07-16 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Through-silicon vias in integrated circuit packaging
US10861969B2 (en) 2018-07-16 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming FinFET structure with reduced Fin buckling
US11205700B2 (en) 2018-07-16 2021-12-21 Taiwan Semiconductor Manufacturing Co., Ltd. Air gap spacer and related methods
US11276695B2 (en) 2018-07-16 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US10854503B2 (en) 2018-07-16 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with air gap and method sealing the air gap
US11271111B2 (en) 2018-07-26 2022-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structure with barrier in FinFET device and method for forming the same
US11171053B2 (en) 2018-07-27 2021-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor device and related methods
US10700180B2 (en) 2018-07-27 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US10734474B2 (en) 2018-07-30 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal structure and methods of fabrication thereof
US10840189B2 (en) 2018-07-30 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit devices having raised via contacts and methods of fabricating the same
US10535667B1 (en) 2018-07-30 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array and semiconductor chip
US10784278B2 (en) 2018-07-30 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and manufacturing method thereof
US10672879B2 (en) 2018-07-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming FinFET and gate-all-around FET with selective high-K oxide deposition
US10707333B2 (en) 2018-07-30 2020-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11296236B2 (en) 2018-07-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10854716B2 (en) 2018-07-30 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with source/drain contact formed using bottom-up deposition
US10629490B2 (en) 2018-07-31 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field-effect transistor device and method of fabricating the same
US11217479B2 (en) 2018-07-31 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple metallization scheme
US11038059B2 (en) 2018-07-31 2021-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11038043B2 (en) 2018-07-31 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10714342B2 (en) * 2018-07-31 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US10790195B2 (en) 2018-07-31 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Elongated pattern and formation thereof
US10679995B2 (en) 2018-07-31 2020-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11121129B2 (en) 2018-07-31 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US10658237B2 (en) 2018-07-31 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices
US11081395B2 (en) 2018-07-31 2021-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistor having air gap and method for manufacturing the same
US10868182B2 (en) 2018-07-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and manufacturing method thereof
US10868184B2 (en) 2018-07-31 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with hard mask layer over gate structure and method for forming the same
US10886182B2 (en) 2018-07-31 2021-01-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11227918B2 (en) 2018-07-31 2022-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Melt anneal source and drain regions
US11069692B2 (en) 2018-07-31 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with dielectric fins
US11114303B2 (en) 2018-07-31 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Gate all around device, method for manufacturing FinFET device, and method for manufacturing gate all around device
US11031300B2 (en) 2018-07-31 2021-06-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing the same
US10879394B2 (en) 2018-07-31 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US11211293B2 (en) 2018-07-31 2021-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and methods of forming the same
US11158727B2 (en) 2018-07-31 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for gate-all-around device with extended channel
US11158644B2 (en) 2018-07-31 2021-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with field effect transistors of differing gate dielectric thickness on the same substrate and method of manufacturing the same
US11049775B2 (en) 2018-07-31 2021-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having FinFET with work function layers and method of manufacturing the same
US10679856B2 (en) 2018-08-14 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with insulating structure over fin isolation structure and method for forming the same
US11031383B2 (en) 2018-08-14 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US11211479B2 (en) 2018-08-14 2021-12-28 Taiwan Semiconductor Manufaciuring Co., Ltd. Method of fabricating trimmed fin and fin structure
US10840342B2 (en) 2018-08-14 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming source/drain contacts in field-effect transistors
US10693004B2 (en) 2018-08-14 2020-06-23 Taiwan Semiconductor Manufactruing Co., Ltd. Via structure with low resistivity and method for forming the same
US10879393B2 (en) 2018-08-14 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having gate structure with bent sidewalls
US10797161B2 (en) 2018-08-14 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor structure using selective forming process
US11362001B2 (en) 2018-08-14 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing nanostructures with various widths
US10763255B2 (en) 2018-08-14 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11018226B2 (en) 2018-08-14 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10741558B2 (en) 2018-08-14 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Nanosheet CMOS device and method of forming
US10720503B2 (en) 2018-08-14 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device
US10522623B1 (en) 2018-08-15 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium nitride layers on semiconductor structures, and methods for forming the same
US11062963B2 (en) 2018-08-15 2021-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and process of integrated circuit having latch-up suppression
US11037837B2 (en) 2018-08-15 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial source/drain and methods of forming same
DE102019120821A1 (de) 2018-08-15 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur und prozess einer integrierten schaltung mit einer latch-up-unterdrückung
US11024550B2 (en) 2018-08-16 2021-06-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11152491B2 (en) 2018-08-23 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure with inner spacer layer
US11264380B2 (en) 2018-08-27 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10868020B2 (en) 2018-08-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Well strap structures and methods of forming the same
US11018011B2 (en) 2018-08-29 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming contact features in semiconductor devices
US11043578B2 (en) 2018-08-30 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Nanowire stack GAA device with inner spacer
US10930564B2 (en) 2018-08-31 2021-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structure cutting process
US10868118B2 (en) 2018-08-31 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming epitaxial source/drain features in semiconductor devices
US11043425B2 (en) 2018-08-31 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of reducing parasitic capacitance in semiconductor devices
US10867862B2 (en) 2018-08-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor method and device
US11222951B2 (en) 2018-08-31 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial source/drain structure and method
US10886269B2 (en) 2018-09-18 2021-01-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10714395B2 (en) 2018-09-18 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Fin isolation structure for FinFET and method of forming the same
US10861928B2 (en) 2018-09-18 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with capacitors
US11101385B2 (en) 2018-09-19 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with air gap and method for forming the same
US11024721B2 (en) 2018-09-20 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11018012B2 (en) 2018-09-21 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures with deposited silicide layers
US10923393B2 (en) 2018-09-24 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contacts and interconnect structures in field-effect transistors
US11437385B2 (en) 2018-09-24 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with reduced fin pitch
US10872891B2 (en) 2018-09-25 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with gate cut features
US11217585B2 (en) 2018-09-25 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Forming dielectric dummy fins with different heights in different regions of a semiconductor device
US11245011B2 (en) 2018-09-25 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical tunnel field-effect transistor with U-shaped gate and band aligner
US11626507B2 (en) 2018-09-26 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing FinFETs having barrier layers with specified SiGe doping concentration
US11508827B2 (en) 2018-09-26 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Air spacer for a gate structure of a transistor
US11563167B2 (en) 2018-09-26 2023-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for an MRAM device with a multi-layer top electrode
US11038036B2 (en) 2018-09-26 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Separate epitaxy layers for nanowire stack GAA device
US10840152B2 (en) 2018-09-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11411090B2 (en) 2018-09-27 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures for gate-all-around devices and methods of forming the same
US10804162B2 (en) 2018-09-27 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Dual channel gate all around transistor device and fabrication methods thereof
US11349008B2 (en) 2018-09-27 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile
US10879355B2 (en) 2018-09-27 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Profile design for improved device performance
US10964816B2 (en) 2018-09-27 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method and device for boosting performance of FinFETs via strained spacer
US10923659B2 (en) 2018-09-27 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Wafers for use in aligning nanotubes and methods of making and using the same
US11094826B2 (en) 2018-09-27 2021-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US10636702B2 (en) 2018-09-27 2020-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive interconnect structures in integrated circuits
US10991630B2 (en) 2018-09-27 2021-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10937691B2 (en) 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
US11171209B2 (en) 2018-09-27 2021-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US11121025B2 (en) 2018-09-27 2021-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. Layer for side wall passivation
US11031397B2 (en) 2018-09-27 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device integration with separated Fin-like field effect transistor cells and gate-all-around transistor cells
US10854506B2 (en) 2018-09-27 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11024729B2 (en) 2018-09-27 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd Method for manufacturing semiconductor device
US11450571B2 (en) 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
US11374126B2 (en) 2018-09-27 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with fin top hard mask and method of forming the same
US10840133B2 (en) 2018-09-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with staggered selective growth
US11011636B2 (en) 2018-09-27 2021-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with hard mask layer over gate structure and method for forming the same
US11004740B2 (en) 2018-09-27 2021-05-11 Taiwan Semicondctor Manufacturing Co., Ltd. Structure and method for interconnection with self-alignment
US10672665B2 (en) 2018-09-28 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
DE102019117897B4 (de) 2018-09-28 2024-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung zur logik- und speicher-co-optimierung sowie schaltung
US10790184B2 (en) 2018-09-28 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation with multi-step structure for FinFET device and method of forming the same
US11069812B2 (en) 2018-09-28 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method of forming the same
US10923474B2 (en) 2018-09-28 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having gate-all-around devices
US10680075B2 (en) 2018-09-28 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including source/drain epitaxial layer having facets and manufacturing method thereof
US11205714B2 (en) 2018-09-28 2021-12-21 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy structure at fin cut
US11222958B2 (en) 2018-09-28 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor with external ferroelectric structure
US11257671B2 (en) 2018-09-28 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system of control of epitaxial growth
US11107925B2 (en) 2018-09-28 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming contact features in field-effect transistors
US10763863B2 (en) 2018-09-28 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device for logic and memory co-optimization
US11264237B2 (en) 2018-09-28 2022-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of epitaxy and semiconductor device
US10867861B2 (en) 2018-09-28 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method of forming the same
US11094597B2 (en) 2018-09-28 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with fin structures
US11024549B2 (en) 2018-09-28 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11088262B2 (en) 2018-09-28 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Radical etching in gate formation
US10950725B2 (en) 2018-09-28 2021-03-16 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial source/drain structure and method of forming same
US10872805B2 (en) 2018-09-28 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11289583B2 (en) 2018-09-28 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. High aspect ratio gate structure formation
US10910375B2 (en) 2018-09-28 2021-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabrication thereof
US11121036B2 (en) 2018-10-16 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11069579B2 (en) 2018-10-19 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10847373B2 (en) 2018-10-23 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming silicide contact in field-effect transistors
US11107904B2 (en) 2018-10-23 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Inner spacer formation in multi-gate transistors
US11380682B2 (en) 2018-10-23 2022-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with FinFET gate structures
US10825721B2 (en) 2018-10-23 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Insulating cap on contact structure and method for forming the same
US10840251B2 (en) 2018-10-25 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and manufacturing method
US10872906B2 (en) 2018-10-25 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10868018B2 (en) 2018-10-25 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM structure and connection
US10937876B2 (en) 2018-10-26 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain feature to contact interfaces
US10950729B2 (en) 2018-10-26 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structure with insulating cap
US11133222B2 (en) 2018-10-26 2021-09-28 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor structure
US10833167B2 (en) 2018-10-26 2020-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (finFET) device structure and method for forming the same
US10985022B2 (en) 2018-10-26 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures having interfacial layers
US10847426B2 (en) 2018-10-28 2020-11-24 Taiwan Semicondutor Manufacturing Company, Ltd. FinFET devices and methods of forming the same
US10943983B2 (en) 2018-10-29 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits having protruding interconnect conductors
US10868114B2 (en) 2018-10-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures of semiconductor devices
US10916550B2 (en) 2018-10-30 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Memory devices with gate all around transistors
US10727134B2 (en) 2018-10-30 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices with gate-all-around structure
US11145544B2 (en) 2018-10-30 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Contact etchback in room temperature ionic liquid
US10811255B2 (en) 2018-10-30 2020-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices
US10957604B2 (en) 2018-10-31 2021-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10998238B2 (en) 2018-10-31 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with buried interconnect conductors
US11043558B2 (en) 2018-10-31 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain metal contact and formation thereof
US10971408B2 (en) 2018-10-31 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Contact air gap formation and structures thereof
US10944009B2 (en) 2018-10-31 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating a FinFET device with wrap-around silicide source/drain structure
US11335604B2 (en) 2018-10-31 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10943818B2 (en) 2018-10-31 2021-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10950730B2 (en) 2018-10-31 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Merged source/drain features
US10868183B2 (en) 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and methods of forming the same
US11217486B2 (en) 2018-10-31 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11087987B2 (en) 2018-10-31 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10867842B2 (en) 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for shrinking openings in forming integrated circuits
US11038029B2 (en) 2018-11-08 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11296077B2 (en) 2018-11-19 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Transistors with recessed silicon cap and method forming same
US10868185B2 (en) 2018-11-27 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US11257928B2 (en) 2018-11-27 2022-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for epitaxial growth and device
US11195951B2 (en) 2018-11-27 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with self-aligned wavy contact profile and method of forming the same
US10923598B2 (en) 2018-11-27 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure and methods of forming the same
US11476196B2 (en) 2018-11-27 2022-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with multi-layer dielectric
US11276832B2 (en) 2018-11-28 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with diffusion break and method
US11031291B2 (en) 2018-11-28 2021-06-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US11264268B2 (en) 2018-11-29 2022-03-01 Taiwan Semiconductor Mtaiwananufacturing Co., Ltd. FinFET circuit devices with well isolation
US11101360B2 (en) 2018-11-29 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11271094B2 (en) 2018-11-29 2022-03-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of manufacturing the same
US11387362B2 (en) 2018-11-30 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11107690B2 (en) 2018-11-30 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method of forming the same
US11164944B2 (en) 2018-11-30 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
DE102019115490B4 (de) 2018-11-30 2022-10-20 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-bauelement und verfahren zu dessen herstellung
US10879400B2 (en) 2018-12-24 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and method of manufacturing the same
US10720431B1 (en) 2019-01-25 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having gate-all-around structure with oxygen blocking layers
US10868000B2 (en) 2019-01-25 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with epitaxial structure and method for forming the same
US11685015B2 (en) 2019-01-28 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for performing chemical mechanical polishing
US11088150B2 (en) 2019-01-28 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10825918B2 (en) 2019-01-29 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10777455B2 (en) 2019-01-29 2020-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-etching process for forming via opening in semiconductor device structure
US11211381B2 (en) 2019-01-29 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11164866B2 (en) 2019-02-20 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for manufacturing the same
US10825919B2 (en) 2019-02-21 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process
US11823896B2 (en) 2019-02-22 2023-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive structure formed by cyclic chemical vapor deposition
US10868171B2 (en) 2019-02-26 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with gate dielectric layer and method for forming the same
US11217526B2 (en) 2019-02-28 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with source resistor and manufacturing method thereof
US10535524B1 (en) 2019-03-11 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Tuning threshold voltage through meta stable plasma treatment
US11469109B2 (en) 2019-03-14 2022-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having metal contact features and method for forming the same
US10867867B2 (en) 2019-03-14 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices with mixed threshold voltages boundary isolation of multiple gates and structures formed thereby
US10872810B2 (en) 2019-03-14 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US11164796B2 (en) 2019-03-14 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US10978354B2 (en) 2019-03-15 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Selective dual silicide formation
US11043594B2 (en) 2019-03-26 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Low parasitic resistance contact structure
US11201060B2 (en) 2019-04-17 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US11101353B2 (en) 2019-04-17 2021-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US11121234B2 (en) 2019-04-24 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked gate spacers
US10971630B2 (en) 2019-04-24 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having both gate-all-around devices and planar devices
US11232943B2 (en) 2019-04-24 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for semiconductor interconnect
US11031336B2 (en) 2019-04-25 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory device having contact element of rectangular shape
US11038058B2 (en) 2019-04-26 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11239339B2 (en) 2019-04-29 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method
US11094695B2 (en) 2019-05-17 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device and method of forming the same
US11069784B2 (en) * 2019-05-17 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US11088255B2 (en) 2019-05-17 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices
US11088034B2 (en) 2019-05-22 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures for semiconductor devices
US11183574B2 (en) 2019-05-24 2021-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Work function layers for transistor gate electrodes
US11183580B2 (en) 2019-05-30 2021-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US10879379B2 (en) 2019-05-30 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US10818768B1 (en) 2019-05-30 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming metal cap layers to improve performance of semiconductor structure
US11069578B2 (en) 2019-05-31 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
US10755964B1 (en) 2019-05-31 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain isolation structure and methods thereof
US11342229B2 (en) 2019-06-13 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a semiconductor device structure having an electrical connection structure
US11043595B2 (en) 2019-06-14 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate in memory macro edge and middle strap
US11004725B2 (en) 2019-06-14 2021-05-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a FinFET device with gaps in the source/drain region
US11056573B2 (en) 2019-06-14 2021-07-06 Taiwan Semiconductor Manufacturing Company, Ltd. Implantation and annealing for semiconductor device
US11107923B2 (en) 2019-06-14 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain regions of FinFET devices and methods of forming same
US10868174B1 (en) 2019-06-14 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Devices with strained isolation features
US10971402B2 (en) 2019-06-17 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including interface layer and method of fabricating thereof
US11682665B2 (en) 2019-06-19 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor layout with different row heights
US11264284B2 (en) 2019-06-20 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10872821B1 (en) 2019-06-24 2020-12-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US11245071B2 (en) 2019-06-25 2022-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell, method of forming the same, and semiconductor device having the same
US11373870B2 (en) 2019-06-27 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device including performing thermal treatment on germanium layer
US11244871B2 (en) 2019-06-27 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices for tightening spacing between nanosheets in GAA structures and structures formed thereby
US10879469B1 (en) 2019-06-28 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a field effect transistor using nanotube structures and a field effect transistor
US11515197B2 (en) 2019-07-11 2022-11-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method of forming the semiconductor device
US11152486B2 (en) 2019-07-15 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance
US11133223B2 (en) 2019-07-16 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Selective epitaxy
US11049774B2 (en) 2019-07-18 2021-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid source drain regions formed based on same Fin and methods forming same
US11476166B2 (en) 2019-07-30 2022-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers
US11348839B2 (en) 2019-07-31 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor devices with multiple silicide regions
US11411112B2 (en) 2019-07-31 2022-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structure, method of forming the same, and semiconductor device having the same
US11145660B2 (en) 2019-07-31 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Dual-port SRAM cell structure
US11532550B2 (en) 2019-07-31 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having a multi-layer conductive feature and method making the same
US11342225B2 (en) 2019-07-31 2022-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier-free approach for forming contact plugs
US11335817B2 (en) 2019-08-15 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Composite etch stop layers for sensor devices
US10985266B2 (en) 2019-08-20 2021-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of gap filling for semiconductor device
US11094788B2 (en) 2019-08-21 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11152488B2 (en) 2019-08-21 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure with dummy pattern top in channel region and methods of forming the same
US20210057273A1 (en) 2019-08-22 2021-02-25 Taiwan Semiconductor Manufacturing Co., Ltd. Barrier-Less Structures
US11456368B2 (en) 2019-08-22 2022-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with hard mask layer over fin structure and method for forming the same
US10985265B2 (en) 2019-08-22 2021-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
US11114345B2 (en) 2019-08-22 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. IC including standard cells and SRAM cells
US11069811B2 (en) 2019-08-22 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11127639B2 (en) 2019-08-22 2021-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with fin structures
US11245029B2 (en) 2019-08-22 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US11133416B2 (en) 2019-08-23 2021-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices having plural epitaxial layers
US11011372B2 (en) 2019-08-23 2021-05-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture
US11189727B2 (en) 2019-08-23 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET contacts and method forming same
US10978344B2 (en) 2019-08-23 2021-04-13 Taiwan Semiconductor Manufacturing Company, Ltd. Melting laser anneal of epitaxy regions
US11101180B2 (en) 2019-08-23 2021-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US11189531B2 (en) 2019-08-23 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method
US11515199B2 (en) 2019-08-26 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structures including standard cells and tap cells
US11133386B2 (en) 2019-08-27 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-layer fin structure
US11710667B2 (en) 2019-08-27 2023-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same
US11315925B2 (en) 2019-08-28 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Uniform gate width for nanostructure devices
US11315936B2 (en) 2019-08-29 2022-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and manufacturing method thereof
US11195934B2 (en) 2019-08-29 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for bi-layer self-aligned contact
US11239368B2 (en) 2019-08-30 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
DE102020114875B4 (de) 2019-08-30 2024-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet-vorrichtung und verfahren
US11489063B2 (en) 2019-08-30 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd Method of manufacturing a source/drain feature in a multi-gate semiconductor structure
US11282942B2 (en) 2019-08-30 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with uniform threshold voltage distribution and method of forming the same
US11456383B2 (en) 2019-08-30 2022-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a contact plug with an air gap spacer
US11158721B2 (en) 2019-08-30 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Metal oxide interlayer structure for nFET and pFET
US11462614B2 (en) 2019-08-30 2022-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacturing
US11201243B2 (en) 2019-09-03 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Nanowire stack GAA device and methods for producing the same
US11545573B2 (en) 2019-09-10 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid nanostructure and fin structure device
US11227950B2 (en) 2019-09-16 2022-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming air spacers in semiconductor devices
US11282920B2 (en) 2019-09-16 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with air gap on gate structure and method for forming the same
US11302818B2 (en) 2019-09-16 2022-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gate resistance reduction through low-resistivity conductive layer
US10937884B1 (en) 2019-09-16 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Gate spacer with air gap for semiconductor device structure and method for forming the same
US11430891B2 (en) 2019-09-16 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Gate all around structure with additional silicon layer and method for forming the same
US10937652B1 (en) 2019-09-16 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure of cut end with self-aligned double patterning
US11239114B2 (en) 2019-09-16 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with reduced contact resistance and methods of forming the same
US11107836B2 (en) 2019-09-16 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10867863B1 (en) 2019-09-16 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11227828B2 (en) 2019-09-16 2022-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11362212B2 (en) 2019-09-17 2022-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Contact interface engineering for reducing contact resistance
US11114547B2 (en) 2019-09-17 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with negative capacitance dieletric structures
US11335592B2 (en) 2019-09-17 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Contact resistance between via and conductive line
US11094821B2 (en) 2019-09-17 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor structure and method with strain effect
US11342231B2 (en) 2019-09-17 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device with low threshold voltage
US11088249B2 (en) 2019-09-17 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with implant and method of manufacturing same
US11315785B2 (en) 2019-09-17 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial blocking layer for multi-gate devices and fabrication methods thereof
US11469139B2 (en) 2019-09-20 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Bottom-up formation of contact plugs
US11646311B2 (en) 2019-09-23 2023-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
US11164868B2 (en) 2019-09-24 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US11177344B2 (en) 2019-09-25 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device with air gap spacer and fabrication methods thereof
US11282935B2 (en) 2019-09-26 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with protective dielectric layer and method of forming the same
US11670551B2 (en) 2019-09-26 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Interface trap charge density reduction
US11239121B2 (en) 2019-09-26 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate contacts and methods of forming the same
US11342222B2 (en) 2019-09-26 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned scheme for semiconductor device and method of forming the same
US11508624B2 (en) 2019-09-26 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around device with different channel semiconductor materials and method of forming the same
US11322409B2 (en) 2019-09-26 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate devices and method of fabricating the same
US11145765B2 (en) 2019-09-26 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around structure with self substrate isolation and methods of forming the same
US11387146B2 (en) 2019-09-26 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with air gaps between metal gates and method of forming the same
US11282748B2 (en) 2019-09-26 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US11482610B2 (en) 2019-09-26 2022-10-25 Taiwan Semiconductor Manufacturing Co. Method of forming a gate structure
US11621224B2 (en) 2019-09-26 2023-04-04 Taiwan Semiconductor Manufacturing Co. Ltd. Contact features and methods of fabricating the same in semiconductor devices
US11211116B2 (en) 2019-09-27 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded SRAM write assist circuit
US11328990B2 (en) 2019-09-27 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Via structure having a metal hump for low interface resistance
US11587927B2 (en) 2019-09-27 2023-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Crown bulk for FinFET device
US11581226B2 (en) 2019-09-27 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with tunable epitaxy structures and method of forming the same
US11222948B2 (en) 2019-09-27 2022-01-11 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of fabricating the semiconductor structure
US11443980B2 (en) 2019-09-27 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating semiconductor device with metal pad extending into top metal layer
US11271083B2 (en) 2019-09-27 2022-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, FinFET device and methods of forming the same
US11121037B2 (en) 2019-09-27 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11728405B2 (en) 2019-09-28 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Stress-inducing silicon liner in semiconductor devices
US11031292B2 (en) 2019-09-29 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11296084B2 (en) 2019-09-29 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition method, semiconductor device and method of fabricating the same
US11374104B2 (en) 2019-09-30 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of reducing capacitance in field-effect transistors
US11264393B2 (en) 2019-09-30 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain contact having a protruding segment
US11289417B2 (en) 2019-09-30 2022-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of forming the same
US11417653B2 (en) 2019-09-30 2022-08-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same
US11094796B2 (en) 2019-09-30 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor spacer structures
US11158539B2 (en) 2019-10-01 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for barrier-less plug
US11088251B2 (en) 2019-10-01 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain contacts for semiconductor devices and methods of forming
US11127832B2 (en) 2019-10-01 2021-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US10937704B1 (en) 2019-10-01 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Mixed workfunction metal for nanosheet device
US11296227B2 (en) 2019-10-16 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing semiconductor devices and semiconductor devices
US11189708B2 (en) 2019-10-17 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with gate stack and method for forming the same
US11018257B2 (en) 2019-10-18 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having a plurality of threshold voltages and method of forming the same
US11522085B2 (en) 2019-10-18 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric semiconductor device and method
US11037925B2 (en) 2019-10-18 2021-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method of integrated circuit having decouple capacitance
US11335774B2 (en) 2019-10-18 2022-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure for semiconductor device and method
US11201229B2 (en) 2019-10-18 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US11502197B2 (en) 2019-10-18 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain epitaxial layers
US11145650B2 (en) 2019-10-18 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Gate cut dielectric feature and method of forming the same
US11251305B2 (en) 2019-10-25 2022-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US11233130B2 (en) 2019-10-25 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11322495B2 (en) 2019-10-28 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Complementary metal-oxide-semiconductor device and method of manufacturing the same
US10977409B1 (en) 2019-10-29 2021-04-13 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of generating a layout for a semiconductor device
US11264270B2 (en) 2019-10-29 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Air-replaced spacer for self-aligned contact scheme
US11658245B2 (en) 2019-10-29 2023-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing
US11251284B2 (en) 2019-10-29 2022-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy gate cutting process and resulting gate structures
US11296199B2 (en) 2019-10-29 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods
US11450754B2 (en) 2019-10-29 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture
US11145728B2 (en) 2019-10-30 2021-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming same
US11417748B2 (en) 2019-10-30 2022-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating a semiconductor device
US11264327B2 (en) 2019-10-30 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Backside power rail structure and methods of forming same
US11515212B2 (en) 2019-10-30 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing semiconductor devices having controlled S/D epitaxial shape
US11322619B2 (en) 2019-10-30 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11355605B2 (en) 2019-10-30 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US11621195B2 (en) 2019-10-30 2023-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing the same
DE102020114813A1 (de) 2019-10-31 2021-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur und bildungsverfahren für halbleitervorrichtung mit isolierungsstruktur
US11424242B2 (en) 2019-10-31 2022-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with isolation structure
US11488857B2 (en) 2019-10-31 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough process
US11631770B2 (en) 2019-10-31 2023-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with stressor
US11374090B2 (en) 2019-10-31 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures for semiconductor devices
US11201225B2 (en) 2019-10-31 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with stressor
US11756997B2 (en) 2019-10-31 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
US11127842B2 (en) 2019-11-19 2021-09-21 Globalfoundries U.S. Inc. Single fin structures
US10964792B1 (en) 2019-11-22 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Dual metal capped via contact structures for semiconductor devices
US11081401B2 (en) 2019-11-29 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US11133221B2 (en) 2019-12-17 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure with gate electrode layer
US11380781B2 (en) 2019-12-17 2022-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Contact and via structures for semiconductor devices
US11545490B2 (en) 2019-12-17 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US11233134B2 (en) 2019-12-19 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistors with dual silicide contact structures
US11227794B2 (en) 2019-12-19 2022-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structure
US11502166B2 (en) 2019-12-20 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Seal material for air gaps in semiconductor devices
US11728223B2 (en) 2019-12-20 2023-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of manufacture
US11296187B2 (en) 2019-12-20 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Seal material for air gaps in semiconductor devices
US11901220B2 (en) 2019-12-20 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Bilayer seal material for air gaps in semiconductor devices
US11075195B2 (en) 2019-12-26 2021-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated hybrid standard cell structure with gate-all-around device
US11664420B2 (en) 2019-12-26 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11444200B2 (en) 2019-12-26 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with isolating feature and method for forming the same
US11276571B2 (en) 2019-12-26 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method of breaking through etch stop layer
US11362096B2 (en) 2019-12-27 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11488859B2 (en) 2019-12-27 2022-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11282944B2 (en) 2019-12-30 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11380548B2 (en) 2019-12-30 2022-07-05 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing semiconductor structure through multi-implantation to fin structures
US11508623B2 (en) 2019-12-31 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Local gate height tuning by CMP and dummy gate design
US11393925B2 (en) 2019-12-31 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with nanostructure
US11107886B2 (en) 2020-01-10 2021-08-31 Taiwan Semiconductor Manufacturing Company Ltd. Memory device and method of fabricating the memory device
US11233156B2 (en) 2020-01-15 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and manufacturing method thereof
US11855619B2 (en) 2020-01-15 2023-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Power switch circuit, IC structure of power switch circuit, and method of forming IC structure
US11476365B2 (en) 2020-01-16 2022-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor device structure and method for forming the same
US11302692B2 (en) 2020-01-16 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
US11495491B2 (en) 2020-01-16 2022-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with stacked conductive structures
US11139379B2 (en) 2020-01-16 2021-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US11309419B2 (en) 2020-01-17 2022-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11183584B2 (en) 2020-01-17 2021-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11355615B2 (en) 2020-01-17 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET having fluorine-doped gate sidewall spacers
US11302577B2 (en) 2020-01-17 2022-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Self aligned contact scheme
US11244899B2 (en) 2020-01-17 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Butted contacts and methods of fabricating the same in semiconductor devices
US11444202B2 (en) 2020-01-17 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11302784B2 (en) 2020-01-17 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having contact feature and method of fabricating the same
US11393910B2 (en) 2020-01-21 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and formation method thereof
US11322603B2 (en) 2020-01-21 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-punch-through doping on source/drain region
US11264504B2 (en) 2020-01-24 2022-03-01 Globalfoundries U.S. Inc. Active and dummy fin structures
US11201106B2 (en) 2020-01-24 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with conductors embedded in a substrate
US11251268B2 (en) 2020-01-28 2022-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with doped structure
US11929327B2 (en) 2020-01-29 2024-03-12 Taiwan Semiconductor Manufacturing Co., Inc. Liner-free conductive structures with anchor points
US11417764B2 (en) 2020-01-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Interface profile control in epitaxial structures for semiconductor devices
US11264273B2 (en) 2020-01-29 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Electron migration control in interconnect structures
US11521969B2 (en) 2020-01-29 2022-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures for semiconductor devices
DE102020119831A1 (de) 2020-01-29 2021-07-29 Taiwan Semiconductor Manufacturing Co., Ltd. Überzugfreie leitfähige strukturen mit ankerpunkten
US11245028B2 (en) 2020-01-30 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures of semiconductor devices
DE102020119963A1 (de) 2020-01-30 2021-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und verfahren
US11444177B2 (en) 2020-01-30 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11522050B2 (en) 2020-01-30 2022-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11563110B2 (en) 2020-01-30 2023-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for forming the same
DE102020114860A1 (de) 2020-01-31 2021-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor-gates und verfahren zum bilden davon
US11437287B2 (en) 2020-01-31 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gates and methods of forming thereof
US11217586B2 (en) 2020-01-31 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having dummy fin physically separating the first and second gate stacks
US11610822B2 (en) 2020-01-31 2023-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structures for tuning threshold voltage
US11444197B2 (en) 2020-02-07 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11177383B2 (en) 2020-02-10 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11094702B1 (en) 2020-02-10 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. One-time programmable memory device including anti-fuse element and manufacturing method thereof
US11158741B2 (en) 2020-02-11 2021-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Nanostructure device and method
US11177180B2 (en) * 2020-02-11 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Profile control of a gap fill structure
US11705372B2 (en) 2020-02-11 2023-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin loss prevention
US11189706B2 (en) 2020-02-11 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure with airgap and method of forming the same
US11264287B2 (en) 2020-02-11 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with cut metal gate and method of manufacture
US11335776B2 (en) 2020-02-11 2022-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid channel semiconductor device and method
US11830948B2 (en) 2020-02-19 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11664279B2 (en) 2020-02-19 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple threshold voltage implementation through lanthanum incorporation
US11854688B2 (en) 2020-02-19 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11862712B2 (en) 2020-02-19 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of semiconductor device fabrication including growing epitaxial features using different carrier gases
US11211472B2 (en) 2020-02-24 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming the same
US11257950B2 (en) 2020-02-24 2022-02-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method for the semiconductor structure
US11201085B2 (en) 2020-02-25 2021-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having air gap and method for forming the same
US11133230B2 (en) 2020-02-26 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with dual isolation liner and method of forming the same
US11715781B2 (en) 2020-02-26 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with improved capacitors
US11373947B2 (en) 2020-02-26 2022-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming interconnect structures of semiconductor device
US11329165B2 (en) 2020-02-26 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with isolation structure
US11211256B2 (en) 2020-02-26 2021-12-28 Taiwan Semiconductor Manufacturing Co., Ltd Method with CMP for metal ion prevention
US11404570B2 (en) 2020-02-27 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with embedded ferroelectric field effect transistors
US11316046B2 (en) 2020-02-27 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
CN113113359A (zh) 2020-02-27 2021-07-13 台湾积体电路制造股份有限公司 半导体装置的制造方法
TW202145443A (zh) 2020-02-27 2021-12-01 台灣積體電路製造股份有限公司 半導體裝置的形成方法
US11264502B2 (en) 2020-02-27 2022-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11515211B2 (en) 2020-02-27 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Cut EPI process and structures
TW202139270A (zh) 2020-02-27 2021-10-16 台灣積體電路製造股份有限公司 半導體裝置的形成方法
US11328963B2 (en) 2020-02-27 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11374128B2 (en) 2020-02-27 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for air gap inner spacer in gate-all-around devices
US11515216B2 (en) 2020-02-27 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Dual silicide structure and methods thereof
US11769820B2 (en) 2020-02-27 2023-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of manufacturing a FinFET by forming a hollow area in the epitaxial source/drain region
US11393898B2 (en) 2020-02-27 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11799019B2 (en) 2020-02-27 2023-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Gate isolation feature and manufacturing method thereof
US11545432B2 (en) 2020-02-27 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device with source and drain vias having different sizes
US11152475B2 (en) 2020-02-27 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming source/drain contacts utilizing an inhibitor
US11495682B2 (en) 2020-02-27 2022-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11233119B2 (en) 2020-03-02 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Core-shell nanostructures for semiconductor devices
US11233149B2 (en) 2020-03-03 2022-01-25 Taiwan Semiconductor Manufacturing Co., . Ltd. Spacer structures for semiconductor devices
US11695055B2 (en) 2020-03-03 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Passivation layers for semiconductor devices
US11677013B2 (en) 2020-03-30 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain epitaxial layers for transistors
US11563001B2 (en) 2020-03-30 2023-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Air spacer and capping structures in semiconductor devices
US11588038B2 (en) 2020-03-30 2023-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit structure with gate configuration
US11107736B1 (en) 2020-03-31 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures for semiconductor devices
US11374105B2 (en) 2020-03-31 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Nanosheet device with dipole dielectric layer and methods of forming the same
US11158632B1 (en) 2020-04-01 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd Fin-based strap cell structure for improving memory performance
US11309398B2 (en) 2020-04-01 2022-04-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method for the semiconductor device
US11417751B2 (en) 2020-04-01 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11443979B2 (en) 2020-04-01 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US11189697B2 (en) 2020-04-01 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. Ultra-thin fin structure and method of fabricating the same
US11508572B2 (en) 2020-04-01 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11271096B2 (en) 2020-04-01 2022-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming fin field effect transistor device structure
US11257911B2 (en) 2020-04-01 2022-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Sacrificial layer for semiconductor process
US11251073B2 (en) 2020-04-01 2022-02-15 Taiwan Semiconductor Manufacturing Co. Selective deposition of barrier layer
US11450602B2 (en) 2020-04-01 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid method for forming semiconductor interconnect structure
US11387365B2 (en) 2020-04-01 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device for recessed fin structure having rounded corners
US11302796B2 (en) 2020-04-01 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming self-aligned source/drain metal contacts
US11139432B1 (en) 2020-04-01 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming a FinFET device
US11296202B2 (en) 2020-04-01 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Memory chip structure having GAA transistors with different threshold voltages and work functions for improving performances in multiple applications
US11495661B2 (en) 2020-04-07 2022-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including gate barrier layer
US11489053B2 (en) 2020-04-09 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
CN113053878A (zh) 2020-04-09 2021-06-29 台湾积体电路制造股份有限公司 半导体器件及其制造方法
US11309424B2 (en) 2020-04-13 2022-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11177212B2 (en) 2020-04-13 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact formation method and related structure
US11335638B2 (en) 2020-04-15 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Reducing RC delay in semiconductor devices
US11335552B2 (en) 2020-04-17 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with oxide semiconductor channel
US11342501B2 (en) 2020-04-17 2022-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell, method of forming the same, and semiconductor device having the same
US11164789B1 (en) 2020-04-17 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device that includes covering metal gate with multilayer dielectric
US11121138B1 (en) 2020-04-24 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. Low resistance pickup cells for SRAM
US11342413B2 (en) 2020-04-24 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Selective liner on backside via and method thereof
US11450660B2 (en) 2020-04-27 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
US11355410B2 (en) 2020-04-28 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal dissipation in semiconductor devices
TWI741935B (zh) 2020-04-28 2021-10-01 台灣積體電路製造股份有限公司 半導體元件與其製作方法
US11521929B2 (en) 2020-04-28 2022-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Capping layer for liner-free conductive structures
US11251308B2 (en) 2020-04-28 2022-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11349004B2 (en) 2020-04-28 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Backside vias in semiconductor device
US11410930B2 (en) 2020-04-28 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11955370B2 (en) 2020-04-28 2024-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
US11342326B2 (en) 2020-04-28 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned etch in semiconductor devices
US11398385B2 (en) 2020-05-08 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
DE102020122823B4 (de) 2020-05-12 2022-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtungen mit entkopplungskondensatoren
US11450600B2 (en) 2020-05-12 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including decoupling capacitors
US11239208B2 (en) 2020-05-12 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Packaged semiconductor devices including backside power rails and methods of forming the same
US11257712B2 (en) 2020-05-13 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain contact formation methods and devices
US11670692B2 (en) 2020-05-13 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around devices having self-aligned capping between channel and backside power rail
US11631745B2 (en) 2020-05-15 2023-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with uneven gate profile
US11393924B2 (en) 2020-05-18 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with high contact area
US11217629B2 (en) 2020-05-19 2022-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11437492B2 (en) 2020-05-20 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
DE102020127567A1 (de) 2020-05-20 2021-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und verfahren zu ihrer herstellung
US11791218B2 (en) 2020-05-20 2023-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Dipole patterning for CMOS devices
US11527527B2 (en) 2020-05-21 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Tap cell, integrated circuit structure and forming method thereof
US11374089B2 (en) 2020-05-22 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Shallow trench isolation (STI) contact structures and methods of forming same
US11349005B2 (en) 2020-05-22 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicide structures in transistors and methods of forming
US11450572B2 (en) 2020-05-22 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11282843B2 (en) 2020-05-22 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device, SRAM cell, and manufacturing method thereof
US11295989B2 (en) 2020-05-26 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures for semiconductor devices
US11637101B2 (en) 2020-05-26 2023-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11289383B2 (en) 2020-05-27 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11417767B2 (en) 2020-05-27 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including backside vias and methods of forming the same
US11532703B2 (en) 2020-05-27 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
DE102020131611A1 (de) 2020-05-28 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung mit luftspalten und verfahren zu deren herstellung
US11862561B2 (en) 2020-05-28 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside routing and method of forming same
US11410876B2 (en) 2020-05-28 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device with air gaps and method of fabrication thereof
US11502199B2 (en) 2020-05-28 2022-11-15 Taiwan Semiconductor Manufacturing Co, Ltd. Independent control of stacked semiconductor device
US11600528B2 (en) 2020-05-28 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US11380768B2 (en) 2020-05-28 2022-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11929329B2 (en) 2020-05-28 2024-03-12 Taiwan Semiconductor Manufacturing Company, Ltd. Damascene process using cap layer
US11532731B2 (en) 2020-05-28 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
US11682711B2 (en) 2020-05-28 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having multi-layered gate spacers
US11637126B2 (en) 2020-05-29 2023-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same
US11715777B2 (en) 2020-05-29 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11935793B2 (en) 2020-05-29 2024-03-19 Taiwan Semiconductor Manufacturing Co., Ltd. Dual dopant source/drain regions and methods of forming same
US11699742B2 (en) 2020-05-29 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with varying numbers of channel layers and method of fabrication thereof
US11799002B2 (en) 2020-05-29 2023-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of forming the same
US11444198B2 (en) 2020-05-29 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Work function control in gate structures
US11664374B2 (en) 2020-05-29 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Backside interconnect structures for semiconductor devices and methods of forming the same
US11443987B2 (en) 2020-05-29 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside air gap dielectric
US11527539B2 (en) 2020-05-29 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Four-poly-pitch SRAM cell with backside metal tracks
US11527533B2 (en) 2020-05-29 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET pitch scaling
US11302580B2 (en) 2020-05-29 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Nanosheet thickness
US11302798B2 (en) 2020-05-29 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with air gate spacer and air gate cap
US11195752B1 (en) 2020-05-29 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming same
US11723209B2 (en) 2020-05-29 2023-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional memory device and manufacturing method thereof
US11264283B2 (en) 2020-05-29 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-channel devices and methods of manufacture
US11888064B2 (en) 2020-06-01 2024-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
CN113299648A (zh) 2020-06-05 2021-08-24 台湾积体电路制造股份有限公司 半导体器件及其制造方法
US11699735B2 (en) 2020-06-05 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method
US11361994B2 (en) 2020-06-08 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Fully self-aligned interconnect structure
US11515165B2 (en) 2020-06-11 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11417777B2 (en) 2020-06-11 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Enlargement of GAA nanostructure
US11424347B2 (en) 2020-06-11 2022-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11271113B2 (en) 2020-06-12 2022-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11296095B2 (en) 2020-06-12 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and method for forming the same
US11316033B2 (en) 2020-06-12 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11417571B2 (en) 2020-06-12 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Dopant profile control in gate structures for semiconductor devices
US11374006B2 (en) 2020-06-12 2022-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11367784B2 (en) 2020-06-15 2022-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11600728B2 (en) 2020-06-15 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a facet-free source/drain epitaxial structure having an amorphous or polycrystalline layer
US11257755B2 (en) 2020-06-15 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Metal loss prevention in conductive structures
US11637099B2 (en) 2020-06-15 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Forming ESD devices using multi-gate compatible processes
US11282943B2 (en) 2020-06-15 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate devices and fabricating the same with etch rate modulation
US11296080B2 (en) 2020-06-15 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain regions of semiconductor devices and methods of forming the same
US11631736B2 (en) 2020-06-15 2023-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial source/drain feature with enlarged lower section interfacing with backside via
US11342334B2 (en) 2020-06-15 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Memory cell and method
US20210391470A1 (en) 2020-06-15 2021-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Layered structure, semiconductor device including the same, and manufacturing method thereof
US11316023B2 (en) 2020-06-15 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Dumbbell shaped self-aligned capping layer over source/drain contacts and method thereof
US11367621B2 (en) 2020-06-15 2022-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11398550B2 (en) 2020-06-15 2022-07-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with facet S/D feature and methods of forming the same
US11444025B2 (en) 2020-06-18 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor and fabrication method thereof
US20210399013A1 (en) 2020-06-18 2021-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same
US11563006B2 (en) 2020-06-24 2023-01-24 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing thereof
US11527630B2 (en) 2020-06-24 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for fabricating the same
US11699736B2 (en) 2020-06-25 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method
US11728171B2 (en) 2020-06-25 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with metal gate fill structure
US11532714B2 (en) 2020-06-25 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming thereof
US11430700B2 (en) 2020-06-26 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Trench isolation with conductive structures
US11387233B2 (en) 2020-06-29 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11145734B1 (en) 2020-06-29 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with dummy fin and liner and method of forming the same
US11489075B2 (en) 2020-06-29 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11462549B2 (en) 2020-06-30 2022-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
US11545546B2 (en) 2020-06-30 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11264513B2 (en) 2020-06-30 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures for transistors
US11848238B2 (en) 2020-06-30 2023-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for manufacturing semiconductor devices with tunable low-k inner air spacers
US11315924B2 (en) 2020-06-30 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structure for preventing unintentional merging of epitaxially grown source/drain
US11729967B2 (en) 2020-07-08 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor, memory device, and method
US11903189B2 (en) 2020-07-09 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Three-dimensional memory and fabricating method thereof
US11437371B2 (en) 2020-07-10 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistors with negative capacitance layers
US11848239B2 (en) 2020-07-10 2023-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning method and structures resulting therefrom
US11233005B1 (en) 2020-07-10 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing an anchor-shaped backside via
US11855185B2 (en) 2020-07-16 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer masking layer and method of forming same
US11728244B2 (en) 2020-07-17 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for forming the same
US11664278B2 (en) 2020-07-22 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with L-shape conductive feature and methods of forming the same
US11195930B1 (en) 2020-07-22 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and methods of fabrication thereof
US11276643B2 (en) 2020-07-22 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with backside spacer and methods of forming the same
US11804531B2 (en) 2020-07-23 2023-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film transfer using substrate with etch stop layer and diffusion barrier layer
US11329163B2 (en) 2020-07-27 2022-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11903213B2 (en) 2020-07-29 2024-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method for making same
US11296082B2 (en) 2020-07-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11728413B2 (en) 2020-07-30 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gate capping structures in semiconductor devices
US11791401B2 (en) 2020-07-30 2023-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11532718B2 (en) 2020-07-30 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the fins
US11417745B2 (en) 2020-07-30 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stack
US11557510B2 (en) 2020-07-30 2023-01-17 Taiwan Semiconductor Manufacturing Co., Ltd. Spacers for semiconductor devices including backside power rails
US11456211B2 (en) 2020-07-30 2022-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming interconnect structure
US11245023B1 (en) 2020-07-31 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11810960B2 (en) 2020-07-31 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures in semiconductor devices
US11862701B2 (en) 2020-07-31 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked multi-gate structure and methods of fabricating the same
US11862559B2 (en) 2020-07-31 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structures and methods of forming the same
US11348921B2 (en) 2020-07-31 2022-05-31 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of manufacturing the same
US11456209B2 (en) 2020-07-31 2022-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Spacers for semiconductor devices including a backside power rails
US11217494B1 (en) 2020-07-31 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
US11444199B2 (en) 2020-08-03 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11527621B2 (en) 2020-08-05 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Gate electrode deposition and structure formed thereby
US11437240B2 (en) 2020-08-05 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structure and method of forming
US11355587B2 (en) 2020-08-06 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain EPI structure for device boost
US11489057B2 (en) 2020-08-07 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures in semiconductor devices
US11728391B2 (en) 2020-08-07 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. 2d-channel transistor structure with source-drain engineering
US11923436B2 (en) 2020-08-07 2024-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structure for semiconductor device
US11302816B2 (en) 2020-08-11 2022-04-12 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same
US11335806B2 (en) 2020-08-11 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US11557518B2 (en) 2020-08-12 2023-01-17 Taiwan Semiconductor Manufacturing Co., Ltd. Gapfill structure and manufacturing methods thereof
US11610979B2 (en) 2020-08-13 2023-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Profile control in forming epitaxy regions for transistors
US11610890B2 (en) 2020-08-13 2023-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxy regions extending below STI regions and profiles thereof
US11653581B2 (en) 2020-08-13 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM device structure and manufacturing method
US11315834B2 (en) 2020-08-13 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. FinFETs with epitaxy regions having mixed wavy and non-wavy portions
US11374088B2 (en) 2020-08-14 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Leakage reduction in gate-all-around devices
US11935941B2 (en) 2020-08-14 2024-03-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for manufacturing thereof
US11563083B2 (en) 2020-08-14 2023-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Dual side contact structures in semiconductor devices
US11430790B2 (en) 2020-08-14 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11437474B2 (en) 2020-08-17 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures in transistors and method of forming same
US11757021B2 (en) 2020-08-18 2023-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with fin-top hard mask and methods for fabrication thereof
US11532607B2 (en) 2020-08-19 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. ESD structure and semiconductor structure
US11335606B2 (en) 2020-08-19 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Power rails for stacked semiconductor device
US11508621B2 (en) 2020-08-21 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11646377B2 (en) 2020-08-21 2023-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
US11810857B2 (en) 2020-08-25 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Via for semiconductor device and method
US11616143B2 (en) 2020-08-27 2023-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and methods of fabrication thereof
US11676864B2 (en) 2020-08-27 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11482594B2 (en) 2020-08-27 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and method thereof
US11404321B2 (en) 2020-08-31 2022-08-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of manufacturing the same
US11302693B2 (en) 2020-08-31 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11615962B2 (en) 2020-09-11 2023-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures and methods thereof
US11450569B2 (en) 2020-09-18 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and forming method thereof
US11469326B2 (en) 2020-09-18 2022-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of fabrication thereof
US11600533B2 (en) 2020-09-18 2023-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device fabrication methods and structures thereof
US11387322B2 (en) 2020-09-21 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having nanosheet transistor and methods of fabrication thereof
US11569234B2 (en) 2020-09-21 2023-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11502034B2 (en) 2020-09-21 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and methods of fabrication thereof
US11355398B2 (en) 2020-09-21 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and methods of forming the same
US11551969B2 (en) 2020-09-23 2023-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure with backside interconnection structure having air gap
US11862694B2 (en) 2020-09-23 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11349002B2 (en) 2020-09-25 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof
US11430701B2 (en) 2020-09-25 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Gate oxide structures in semiconductor devices
US11348929B2 (en) 2020-09-28 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and method for forming the same
KR20220043945A (ko) 2020-09-28 2022-04-06 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11728212B2 (en) 2020-09-29 2023-08-15 Taiwan Semicondcutor Manufacturing Company, Ltd. Integrated circuit structure and manufacturing method thereof
US11942371B2 (en) 2020-09-29 2024-03-26 Taiwan Semiconductor Manufacturing Co., Ltd. Etch profile control of via opening
US11749732B2 (en) 2020-09-29 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Etch profile control of via opening
US11705491B2 (en) 2020-09-29 2023-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Etch profile control of gate contact opening
US11967526B2 (en) 2020-09-29 2024-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure and manufacturing method thereof
US11581218B2 (en) 2020-09-29 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Etch profile control of gate contact opening
US11664272B2 (en) 2020-09-29 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Etch profile control of gate contact opening
US11721593B2 (en) 2020-09-30 2023-08-08 Tiawan Semiconductor Manufacturing Co., Ltd. Source/drain epitaxial structures for semiconductor devices
US11728173B2 (en) 2020-09-30 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Masking layer with post treatment
US11404548B2 (en) 2020-10-13 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitance reduction for backside power rail device
US11626485B2 (en) 2020-10-14 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor and method
US11594610B2 (en) 2020-10-15 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11894435B2 (en) 2020-10-15 2024-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Contact plug structure of semiconductor device and method of forming same
US11450743B2 (en) 2020-10-21 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a semiconductor device with implantation of impurities at high temperature
US11765892B2 (en) 2020-10-21 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional memory device and method of manufacture
US11737254B2 (en) 2020-10-21 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and layout, manufacturing method of the same
US11637018B2 (en) 2020-10-27 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Barrier layer for contact structures of semiconductor devices
US11502201B2 (en) 2020-10-27 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with backside power rail and methods of fabrication thereof
US11495463B2 (en) 2020-10-27 2022-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11276604B1 (en) 2020-10-27 2022-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Radical-activated etching of metal oxides
US11658119B2 (en) 2020-10-27 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Backside signal interconnection
US11688807B2 (en) 2020-10-27 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and methods of forming
US11569223B2 (en) 2020-10-30 2023-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and method for fabricating the same
US11521971B2 (en) 2020-11-13 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Gate dielectric having a non-uniform thickness profile
CN114284267A (zh) 2020-11-13 2022-04-05 台湾积体电路制造股份有限公司 集成电路及其制造方法
US11735470B2 (en) 2020-11-13 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor device structure with source/drain contact
US11482451B2 (en) 2020-11-20 2022-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structures
US11854831B2 (en) 2020-11-24 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Cleaning process for source/drain epitaxial structures
US11450663B2 (en) 2020-11-25 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11374093B2 (en) 2020-11-25 2022-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11508807B2 (en) 2020-11-25 2022-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having nanosheet transistor and methods of fabrication thereof
US11450666B2 (en) 2020-11-25 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices including two-dimensional material and methods of fabrication thereof
US11450664B2 (en) 2020-11-25 2022-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having nanosheet transistor and methods of fabrication thereof
US11777014B2 (en) 2021-01-04 2023-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Controlled doping in a gate dielectric layer
US11594455B2 (en) 2021-01-05 2023-02-28 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method for the same
US11527622B2 (en) 2021-01-08 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Effective work function tuning via silicide induced interface dipole modulation for metal gates
US11784218B2 (en) 2021-01-08 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Gate air spacer protection during source/drain via hole etching
US11557511B2 (en) 2021-01-12 2023-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11948939B2 (en) 2021-01-13 2024-04-02 Taiwan Semiconductor Manufacturing Company, Ltd Profile control of gate structures in semiconductor devices
US11658216B2 (en) 2021-01-14 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for metal gate boundary isolation
US11670681B2 (en) 2021-01-14 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming fully strained channels
US11502081B2 (en) 2021-01-14 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11749566B2 (en) 2021-01-15 2023-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Inner filler layer for multi-patterned metal gate for nanostructure transistor
US11923357B2 (en) 2021-01-18 2024-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11532522B2 (en) 2021-01-19 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain EPI structure for improving contact quality
US11411079B1 (en) 2021-01-21 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11688786B2 (en) 2021-01-22 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11715762B2 (en) 2021-01-28 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structures and methods of forming the same
US11588018B2 (en) 2021-01-28 2023-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with nanostructure and method for forming the same
US11538927B2 (en) 2021-01-28 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Nanostructures and method for manufacturing the same
US11810961B2 (en) 2021-01-28 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structures and methods of forming the same
US11637180B2 (en) 2021-01-28 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate structures and methods of forming the same
KR20220110379A (ko) 2021-01-29 2022-08-08 삼성전자주식회사 반도체 소자 및 그 제조 방법
US11600703B2 (en) 2021-01-29 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium tin gate-all-around device
US11581411B2 (en) 2021-02-09 2023-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11581410B2 (en) 2021-02-12 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11621197B2 (en) 2021-02-15 2023-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with gate cut feature and method for forming the same
US11798943B2 (en) 2021-02-18 2023-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor source/drain contacts and methods of forming the same
US11563109B2 (en) 2021-02-19 2023-01-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US11652171B2 (en) 2021-02-22 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Contact for semiconductor device and method of forming thereof
US11652140B2 (en) 2021-02-25 2023-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11670595B2 (en) 2021-02-25 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11640941B2 (en) 2021-02-25 2023-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices including metal gate protection and methods of fabrication thereof
US11688767B2 (en) 2021-02-25 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US11735483B2 (en) 2021-02-26 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming epitaxial source/drain features using a self-aligned mask and semiconductor devices fabricated thereof
US11676862B2 (en) 2021-02-26 2023-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11855143B2 (en) 2021-02-26 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures and methods thereof
US11626495B2 (en) 2021-02-26 2023-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Protective liner for source/drain contact to prevent electrical bridging while minimizing resistance
US11532628B2 (en) 2021-02-26 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11848209B2 (en) 2021-02-26 2023-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning semiconductor devices and structures resulting therefrom
US11569348B2 (en) 2021-02-26 2023-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of fabrication thereof
US11610805B2 (en) 2021-02-26 2023-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Replacement material for backside gate cut feature
US11854963B2 (en) 2021-03-03 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor interconnection structure and methods of forming the same
US11887985B2 (en) 2021-03-04 2024-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11626482B2 (en) 2021-03-04 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Air spacer formation with a spin-on dielectric material
US11538858B2 (en) 2021-03-05 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, method of forming the same, and memory array
US11387109B1 (en) 2021-03-05 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. CMP process and methods thereof
US11688768B2 (en) 2021-03-05 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure with source/drain spacers
US11876119B2 (en) 2021-03-05 2024-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with gate isolation features and fabrication method of the same
US11527614B2 (en) 2021-03-09 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with conductive structure and method for manufacturing the same
US11810948B2 (en) 2021-03-10 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11855153B2 (en) 2021-03-10 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11532725B2 (en) 2021-03-11 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming sidewall spacers and semiconductor devices fabricated thereof
US11581437B2 (en) 2021-03-11 2023-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11942358B2 (en) 2021-03-12 2024-03-26 Taiwan Semiconductor Manufacturing Co., Ltd. Low thermal budget dielectric for semiconductor devices
US11670499B2 (en) 2021-03-18 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming conductive feature including cleaning step
US11830912B2 (en) 2021-03-18 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11575026B2 (en) 2021-03-19 2023-02-07 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structure for semiconductor device
US11862700B2 (en) 2021-03-19 2024-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure including forksheet transistors and methods of forming the same
US11605558B2 (en) 2021-03-26 2023-03-14 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit interconnect structure having discontinuous barrier layer and air gap
US11482518B2 (en) 2021-03-26 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structures having wells with protruding sections for pickup cells
US11942479B2 (en) 2021-03-26 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11843032B2 (en) 2021-03-30 2023-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with channel and method for forming the same
US11605591B2 (en) 2021-03-30 2023-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11682675B2 (en) 2021-03-30 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field-effect transistor device and method
US11894460B2 (en) 2021-03-30 2024-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having nanosheet transistor and methods of fabrication thereof
US11961884B2 (en) 2021-03-31 2024-04-16 Taiwan Semiconductor Manufacturing Company, Ltd. Fill structures with air gaps
US11901228B2 (en) 2021-03-31 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned scheme for semiconductor device and method of forming the same
US11749729B2 (en) 2021-03-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, integrated circuit component and manufacturing methods thereof
US11515393B2 (en) 2021-03-31 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having nanosheet transistor and methods of fabrication thereof
US11600534B2 (en) 2021-03-31 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structures and method of forming
US11695042B2 (en) 2021-04-08 2023-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor contacts and methods of forming the same
US11688793B2 (en) 2021-04-08 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure and manufacturing method thereof
US11664378B2 (en) 2021-04-08 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11942556B2 (en) 2021-04-08 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11658074B2 (en) 2021-04-08 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET device with source/drain modulation
US11646346B2 (en) 2021-04-08 2023-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure with air spacer for semiconductor device and method for forming the same
US11784228B2 (en) 2021-04-09 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Process and structure for source/drain contacts
US11545559B2 (en) 2021-04-14 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11742353B2 (en) 2021-04-14 2023-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11710664B2 (en) 2021-04-15 2023-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with backside via contact and a protection liner layer
US11728218B2 (en) 2021-04-16 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11855092B2 (en) 2021-04-16 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming same
US11848372B2 (en) 2021-04-21 2023-12-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for reducing source/drain contact resistance at wafer backside
US11908701B2 (en) 2021-04-22 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning method and manufacturing method of semiconductor device
US11737287B2 (en) 2021-04-23 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, method of forming the same, and semiconductor device having the same
US11710774B2 (en) 2021-04-23 2023-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof
US11929287B2 (en) 2021-04-23 2024-03-12 Taiwan Semiconductor Manufacturing Co., Ltd. Dielectric liner for field effect transistors
US11652152B2 (en) 2021-04-23 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Capping structures in semiconductor devices
US11482595B1 (en) 2021-04-23 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Dual side contact structures in semiconductor devices
US11855186B2 (en) 2021-04-28 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11915937B2 (en) 2021-04-29 2024-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Fluorine incorporation method for nanosheet
US11869892B2 (en) 2021-04-29 2024-01-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11855079B2 (en) 2021-04-30 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with backside trench for metal gate definition
US11967622B2 (en) 2021-05-05 2024-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Inter block for recessed contacts and methods forming same
US11476342B1 (en) 2021-05-05 2022-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with improved source and drain contact area and methods of fabrication thereof
US11600699B2 (en) 2021-05-05 2023-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure integrating air gaps and methods of forming the same
US11705371B2 (en) 2021-05-05 2023-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices having merged source/drain features and methods of fabrication thereof
US11942478B2 (en) 2021-05-06 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11776895B2 (en) 2021-05-06 2023-10-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for manufacturing the same
US11756884B2 (en) 2021-05-06 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnection structure and methods of forming the same
US11640940B2 (en) 2021-05-07 2023-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming interconnection structure including conductive graphene layers
US11575047B2 (en) 2021-05-12 2023-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device active region profile and method of forming the same
US11792977B2 (en) 2021-05-13 2023-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor memory structure
US11757018B2 (en) 2021-05-27 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Formation method of semiconductor device with gate all around structure
US11742416B2 (en) 2021-05-27 2023-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for manufacturing the same
US11869954B2 (en) 2021-05-28 2024-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Nanostructured channel regions for semiconductor devices
US11901415B2 (en) 2021-05-28 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor isolation structures
US11764277B2 (en) 2021-06-04 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method for manufacturing the same
US11688645B2 (en) 2021-06-17 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with fin structures
US11810919B2 (en) 2021-06-17 2023-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure with conductive via structure and method for forming the same
US11916151B2 (en) 2021-06-25 2024-02-27 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure having fin with all around gate
US11855167B2 (en) 2021-07-08 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with nanosheet structure
US11916122B2 (en) 2021-07-08 2024-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Gate all around transistor with dual inner spacers
US11626400B2 (en) 2021-07-16 2023-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure incorporating air gap
US11942329B2 (en) 2021-07-23 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Formation method of semiconductor device with dielectric isolation structure
US11935954B2 (en) 2021-07-30 2024-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US11957070B2 (en) 2021-08-06 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, memory cell and method of forming the same
US11948843B2 (en) 2021-08-06 2024-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming hardmask formation by hybrid materials in semiconductor device
US11670590B2 (en) 2021-08-12 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Chip structure with etch stop layer and method for forming the same
US11908702B2 (en) * 2021-08-19 2024-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures in semiconductor devices
US11581416B1 (en) 2021-08-19 2023-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures in semiconductor devices
US11908921B2 (en) 2021-08-26 2024-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor isolation structures
US11756995B2 (en) 2021-08-27 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a semiconductor device structure having an isolation layer to isolate a conductive feature and a gate electrode layer
US11855078B2 (en) 2021-08-27 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure including forksheet transistors and methods of forming the same
US11901364B2 (en) 2021-08-27 2024-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and methods of forming the same
US11804532B2 (en) 2021-08-27 2023-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around devices with superlattice channel
US11894276B2 (en) 2021-08-30 2024-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same
US11920254B2 (en) 2021-08-30 2024-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Detection of contact formation between a substrate and contact pins in an electroplating system
US11901412B2 (en) 2021-08-30 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Facet-free epitaxial structures for semiconductor devices
US11688625B2 (en) 2021-08-30 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US11710781B2 (en) 2021-08-30 2023-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Growth process and methods thereof
US11784225B2 (en) 2021-08-30 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers
US11810824B2 (en) 2021-08-30 2023-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US11908893B2 (en) 2021-08-30 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11749570B2 (en) 2021-08-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Etch monitoring and performing
US11901410B2 (en) 2021-08-31 2024-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
US11948840B2 (en) 2021-08-31 2024-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Protective layer over FinFET and method of forming same
US11942533B2 (en) 2021-08-31 2024-03-26 Taiwan Semiconductor Manufacturing Co., Ltd. Channel structures for semiconductor devices
US11955384B2 (en) 2022-02-17 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor device with nanostructure channels and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050239252A1 (en) * 2004-04-27 2005-10-27 Young-Joon Ahn Methods of forming integrated circuit devices having field effect transistors of different types in different device regions
US20090001463A1 (en) * 2007-06-26 2009-01-01 Stmicroelectronics (Crolles 2) Sas Finfet field effect transistor insultated from the substrate

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7465973B2 (en) * 2004-12-03 2008-12-16 International Business Machines Corporation Integrated circuit having gates and active regions forming a regular grating
US7807343B2 (en) * 2007-01-10 2010-10-05 Texas Instruments Incorporated EDA methodology for extending ghost feature beyond notched active to improve adjacent gate CD control using a two-print-two-etch approach
US7713824B2 (en) * 2007-02-21 2010-05-11 Infineon Technologies North America Corp. Small feature integrated circuit fabrication
US8003466B2 (en) * 2008-04-08 2011-08-23 Advanced Micro Devices, Inc. Method of forming multiple fins for a semiconductor device
US7862962B2 (en) 2009-01-20 2011-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit layout design
KR101618749B1 (ko) 2009-02-27 2016-05-09 삼성전자주식회사 반도체 소자의 패턴 형성 방법
CN102474099B (zh) 2009-07-02 2015-01-07 Abb研究有限公司 用于控制ac系统的方法和设备
US20110058410A1 (en) * 2009-09-08 2011-03-10 Hitachi, Ltd. Semiconductor memory device
US9159627B2 (en) * 2010-11-12 2015-10-13 Tela Innovations, Inc. Methods for linewidth modification and apparatus implementing the same
US8881066B2 (en) 2011-12-29 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) device
US8486770B1 (en) 2011-12-30 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming CMOS FinFET device
US8741776B2 (en) 2012-02-07 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process for fin-like field effect transistor (finFET) device
US8826200B2 (en) * 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US20150014772A1 (en) * 2013-07-11 2015-01-15 International Business Machines Corporation Patterning fins and planar areas in silicon
US9209037B2 (en) 2014-03-04 2015-12-08 GlobalFoundries, Inc. Methods for fabricating integrated circuits including selectively forming and removing fin structures

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050239252A1 (en) * 2004-04-27 2005-10-27 Young-Joon Ahn Methods of forming integrated circuit devices having field effect transistors of different types in different device regions
CN1700446A (zh) * 2004-04-27 2005-11-23 三星电子株式会社 形成具有不同类型的场效应晶体管的集成电路器件的方法
US7566619B2 (en) * 2004-04-27 2009-07-28 Samsung Electronics Co., Ltd. Methods of forming integrated circuit devices having field effect transistors of different types in different device regions
US20090001463A1 (en) * 2007-06-26 2009-01-01 Stmicroelectronics (Crolles 2) Sas Finfet field effect transistor insultated from the substrate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10049885B2 (en) 2012-02-09 2018-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method for patterning a plurality of features for fin-like field-effect transistor (FinFET) devices
CN104576732A (zh) * 2013-10-21 2015-04-29 中芯国际集成电路制造(上海)有限公司 一种寄生FinFET的横向双扩散半导体器件
CN104576732B (zh) * 2013-10-21 2018-02-06 中芯国际集成电路制造(上海)有限公司 一种寄生FinFET的横向双扩散半导体器件
CN105789049A (zh) * 2014-09-12 2016-07-20 台湾积体电路制造股份有限公司 图案化鳍式场效应晶体管（finfet）器件的多个部件的方法
CN105789049B (zh) * 2014-09-12 2019-06-21 台湾积体电路制造股份有限公司 图案化鳍式场效应晶体管（finfet）器件的多个部件的方法
CN109254494A (zh) * 2017-07-12 2019-01-22 中芯国际集成电路制造(上海)有限公司 一种光学邻近修正方法
CN109254494B (zh) * 2017-07-12 2021-11-12 中芯国际集成电路制造(上海)有限公司 一种光学邻近修正方法
CN113823600A (zh) * 2020-06-18 2021-12-21 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、掩膜版
CN113823600B (zh) * 2020-06-18 2023-11-17 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、掩膜版

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