CN102820230B - 后形成鳍的置换型金属栅极finfet - Google Patents
后形成鳍的置换型金属栅极finfet Download PDFInfo
- Publication number
- CN102820230B CN102820230B CN201210189904.4A CN201210189904A CN102820230B CN 102820230 B CN102820230 B CN 102820230B CN 201210189904 A CN201210189904 A CN 201210189904A CN 102820230 B CN102820230 B CN 102820230B
- Authority
- CN
- China
- Prior art keywords
- fin
- hard mask
- gate electrode
- dummy gate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 32
- 239000002184 metal Substances 0.000 title claims abstract description 32
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 239000000945 filler Substances 0.000 claims abstract description 16
- 239000012212 insulator Substances 0.000 claims abstract description 14
- 238000000059 patterning Methods 0.000 claims abstract description 14
- 239000002019 doping agent Substances 0.000 claims abstract description 13
- 238000012856 packing Methods 0.000 claims abstract description 12
- 239000003989 dielectric material Substances 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 238000011049 filling Methods 0.000 claims description 7
- 230000004913 activation Effects 0.000 claims description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 238000004151 rapid thermal annealing Methods 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 description 37
- 238000010586 diagram Methods 0.000 description 30
- 238000005516 engineering process Methods 0.000 description 28
- 238000005530 etching Methods 0.000 description 19
- 238000001020 plasma etching Methods 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 229910021332 silicide Inorganic materials 0.000 description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 238000002955 isolation Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229920000359 diblock copolymer Polymers 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920000390 Poly(styrene-block-methyl methacrylate) Polymers 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000002408 directed self-assembly Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000013138 pruning Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000009919 sequestration Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/157,812 US8637359B2 (en) | 2011-06-10 | 2011-06-10 | Fin-last replacement metal gate FinFET process |
US13/157,812 | 2011-06-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102820230A CN102820230A (zh) | 2012-12-12 |
CN102820230B true CN102820230B (zh) | 2016-01-27 |
Family
ID=47220708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210189904.4A Active CN102820230B (zh) | 2011-06-10 | 2012-06-08 | 后形成鳍的置换型金属栅极finfet |
Country Status (3)
Country | Link |
---|---|
US (2) | US8637359B2 (zh) |
CN (1) | CN102820230B (zh) |
DE (1) | DE102012207913B4 (zh) |
Families Citing this family (124)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8436404B2 (en) * | 2009-12-30 | 2013-05-07 | Intel Corporation | Self-aligned contacts |
CN102768957B (zh) * | 2011-05-06 | 2016-09-14 | 中国科学院微电子研究所 | 鳍式场效应晶体管及其制造方法 |
US20120302025A1 (en) * | 2011-05-27 | 2012-11-29 | Institute of Microelectronics, Chinese Academy of Sciences | Method for Manufacturing a Semiconductor Structure |
US8969154B2 (en) * | 2011-08-23 | 2015-03-03 | Micron Technology, Inc. | Methods for fabricating semiconductor device structures and arrays of vertical transistor devices |
US8580643B2 (en) | 2011-08-24 | 2013-11-12 | Globalfoundries Inc. | Threshold voltage adjustment in a Fin transistor by corner implantation |
US8441072B2 (en) | 2011-09-02 | 2013-05-14 | United Microelectronics Corp. | Non-planar semiconductor structure and fabrication method thereof |
EP3174106A1 (en) | 2011-09-30 | 2017-05-31 | Intel Corporation | Tungsten gates for non-planar transistors |
WO2013048516A1 (en) * | 2011-09-30 | 2013-04-04 | Intel Corporation | Capping dielectric structure for transistor gates |
US9637810B2 (en) | 2011-09-30 | 2017-05-02 | Intel Corporation | Tungsten gates for non-planar transistors |
WO2013048524A1 (en) | 2011-10-01 | 2013-04-04 | Intel Corporation | Source/drain contacts for non-planar transistors |
US9087915B2 (en) | 2011-12-06 | 2015-07-21 | Intel Corporation | Interlayer dielectric for non-planar transistors |
KR101876793B1 (ko) * | 2012-02-27 | 2018-07-11 | 삼성전자주식회사 | 전계효과 트랜지스터 및 그 제조 방법 |
US8697501B1 (en) * | 2012-12-04 | 2014-04-15 | Globalfoundries Inc. | Semiconductor device having a gate formed on a uniform surface and method for forming the same |
CN103855026B (zh) * | 2012-12-06 | 2017-04-19 | 中国科学院微电子研究所 | FinFET及其制造方法 |
US20140167162A1 (en) * | 2012-12-13 | 2014-06-19 | International Business Machines Corporation | Finfet with merge-free fins |
CN103915372B (zh) * | 2013-01-08 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
CN103972093B (zh) * | 2013-01-30 | 2018-03-06 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管牺牲栅极的制作方法 |
CN104022036B (zh) * | 2013-02-28 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管的形成方法 |
US9012270B2 (en) * | 2013-03-15 | 2015-04-21 | Globalfoundries Inc. | Metal layer enabling directed self-assembly semiconductor layout designs |
CN110047752B (zh) * | 2013-03-15 | 2023-03-17 | 索尼公司 | 利用硬掩模层的纳米线晶体管制造 |
CN104124159B (zh) * | 2013-04-23 | 2017-11-03 | 中国科学院微电子研究所 | 半导体器件制造方法 |
US9263554B2 (en) * | 2013-06-04 | 2016-02-16 | International Business Machines Corporation | Localized fin width scaling using a hydrogen anneal |
US9178043B2 (en) * | 2013-06-21 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-planar transistors with replacement fins and methods of forming the same |
US9093534B2 (en) | 2013-07-29 | 2015-07-28 | International Business Machines Corporation | Dielectric filler fins for planar topography in gate level |
KR102025309B1 (ko) * | 2013-08-22 | 2019-09-25 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US9276115B2 (en) * | 2013-08-29 | 2016-03-01 | Globalfoundries Inc. | Semiconductor devices and methods of manufacture |
CN104425279B (zh) * | 2013-09-04 | 2018-03-06 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其形成方法、半导体器件 |
US9153473B2 (en) | 2013-09-20 | 2015-10-06 | Globalfoundries Singapore Pte. Ltd. | Wafer processing |
US9129910B2 (en) * | 2013-09-20 | 2015-09-08 | Globalfoundries Singapore Pte. Ltd. | Wafer processing |
KR102136234B1 (ko) | 2013-10-03 | 2020-07-21 | 인텔 코포레이션 | 나노와이어 트랜지스터들을 위한 내부 스페이서들 및 그 제조 방법 |
EP2866264A1 (en) | 2013-10-22 | 2015-04-29 | IMEC vzw | Method for manufacturing a field effect transistor of a non-planar type |
US9263349B2 (en) * | 2013-11-08 | 2016-02-16 | Globalfoundries Inc. | Printing minimum width semiconductor features at non-minimum pitch and resulting device |
US9059042B2 (en) * | 2013-11-13 | 2015-06-16 | Globalfoundries Inc. | Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices |
US9412603B2 (en) | 2013-11-19 | 2016-08-09 | Applied Materials, Inc. | Trimming silicon fin width through oxidation and etch |
US9224654B2 (en) | 2013-11-25 | 2015-12-29 | International Business Machines Corporation | Fin capacitor employing sidewall image transfer |
TWI642186B (zh) | 2013-12-18 | 2018-11-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
EP2887399B1 (en) * | 2013-12-20 | 2017-08-30 | Imec | A method for manufacturing a transistor device and associated device |
EP3087616A4 (en) * | 2013-12-23 | 2017-08-02 | Intel Corporation | Method of fabricating semiconductor structures on dissimilar substrates |
US10204989B2 (en) | 2013-12-23 | 2019-02-12 | Intel Corporation | Method of fabricating semiconductor structures on dissimilar substrates |
US9257537B2 (en) | 2013-12-27 | 2016-02-09 | International Business Machines Corporation | Finfet including improved epitaxial topology |
US9252243B2 (en) | 2014-02-07 | 2016-02-02 | International Business Machines Corporation | Gate structure integration scheme for fin field effect transistors |
US20150228503A1 (en) * | 2014-02-07 | 2015-08-13 | Applied Materials, Inc. | Hardmask trimming in semiconductor fin patterning |
US9231072B2 (en) | 2014-02-12 | 2016-01-05 | International Business Machines Corporation | Multi-composition gate dielectric field effect transistors |
US9406746B2 (en) | 2014-02-19 | 2016-08-02 | International Business Machines Corporation | Work function metal fill for replacement gate fin field effect transistor process |
US9391141B2 (en) | 2014-02-24 | 2016-07-12 | Imec Vzw | Method for producing fin structures of a semiconductor device in a substrate |
US9543407B2 (en) * | 2014-02-27 | 2017-01-10 | International Business Machines Corporation | Low-K spacer for RMG finFET formation |
US9171935B2 (en) | 2014-03-07 | 2015-10-27 | Globalfoundries Inc. | FinFET formation with late fin reveal |
US9196711B2 (en) | 2014-03-07 | 2015-11-24 | International Business Machines Corporation | Fin field effect transistor including self-aligned raised active regions |
US9231080B2 (en) * | 2014-03-24 | 2016-01-05 | International Business Machines Corporation | Replacement metal gate |
US9209095B2 (en) * | 2014-04-04 | 2015-12-08 | International Business Machines Corporation | III-V, Ge, or SiGe fin base lateral bipolar transistor structure and method |
US9780213B2 (en) * | 2014-04-15 | 2017-10-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having a reversed T-shaped profile in the metal gate line-end |
US9281303B2 (en) | 2014-05-28 | 2016-03-08 | International Business Machines Corporation | Electrostatic discharge devices and methods of manufacture |
KR102202753B1 (ko) | 2014-08-11 | 2021-01-14 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9455323B2 (en) | 2014-08-28 | 2016-09-27 | International Business Machines Corporation | Under-spacer doping in fin-based semiconductor devices |
US9735256B2 (en) | 2014-10-17 | 2017-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features |
CN109037072A (zh) * | 2014-10-30 | 2018-12-18 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管及其形成方法 |
US9312186B1 (en) * | 2014-11-04 | 2016-04-12 | Taiwan Semiconductor Manufacturing Company Limited | Method of forming horizontal gate all around structure |
US10037992B1 (en) | 2014-12-22 | 2018-07-31 | Altera Corporation | Methods and apparatuses for optimizing power and functionality in transistors |
KR102262834B1 (ko) | 2014-12-24 | 2021-06-08 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9929242B2 (en) | 2015-01-12 | 2018-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9502567B2 (en) | 2015-02-13 | 2016-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor fin structure with extending gate structure |
KR102235612B1 (ko) | 2015-01-29 | 2021-04-02 | 삼성전자주식회사 | 일-함수 금속을 갖는 반도체 소자 및 그 형성 방법 |
US9673056B2 (en) * | 2015-03-16 | 2017-06-06 | International Business Machines Corporation | Method to improve finFET cut overlay |
US9496338B2 (en) * | 2015-03-17 | 2016-11-15 | International Business Machines Corporation | Wire-last gate-all-around nanowire FET |
CN106158637B (zh) * | 2015-03-31 | 2019-04-26 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其形成方法 |
CN106158638B (zh) * | 2015-04-01 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管及其形成方法 |
US9306001B1 (en) | 2015-04-14 | 2016-04-05 | International Business Machines Corporation | Uniformly doped leakage current stopper to counter under channel leakage currents in bulk FinFET devices |
CN104952918A (zh) * | 2015-04-29 | 2015-09-30 | 上海华力微电子有限公司 | 一种鳍式场效应晶体管的制造方法 |
US9287135B1 (en) * | 2015-05-26 | 2016-03-15 | International Business Machines Corporation | Sidewall image transfer process for fin patterning |
US10269968B2 (en) * | 2015-06-03 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including fin structures and manufacturing method thereof |
US9514263B1 (en) | 2015-06-08 | 2016-12-06 | International Business Machines Corporation | Chemo epitaxy mask generation |
KR102399027B1 (ko) | 2015-06-24 | 2022-05-16 | 삼성전자주식회사 | 반도체 장치 |
KR102410146B1 (ko) * | 2015-06-26 | 2022-06-16 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
US10170608B2 (en) | 2015-06-30 | 2019-01-01 | International Business Machines Corporation | Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET |
US9601366B2 (en) | 2015-07-27 | 2017-03-21 | International Business Machines Corporation | Trench formation for dielectric filled cut region |
US9484264B1 (en) | 2015-07-29 | 2016-11-01 | International Business Machines Corporation | Field effect transistor contacts |
US9472620B1 (en) | 2015-09-04 | 2016-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including fin structures and manufacturing method thereof |
US9425105B1 (en) * | 2015-09-15 | 2016-08-23 | International Business Machines Corporation | Semiconductor device including self-aligned gate structure and improved gate spacer topography |
US9768272B2 (en) | 2015-09-30 | 2017-09-19 | International Business Machines Corporation | Replacement gate FinFET process using a sit process to define source/drain regions, gate spacers and a gate cavity |
US9536750B1 (en) | 2015-09-30 | 2017-01-03 | International Business Machines Corporation | Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme |
US9496371B1 (en) | 2015-10-07 | 2016-11-15 | International Business Machines Corporation | Channel protection during fin fabrication |
US9911608B2 (en) | 2016-01-26 | 2018-03-06 | Micron Technology, Inc. | Method of forming patterns |
US10431583B2 (en) | 2016-02-11 | 2019-10-01 | Samsung Electronics Co., Ltd. | Semiconductor device including transistors with adjusted threshold voltages |
US9653547B1 (en) | 2016-03-17 | 2017-05-16 | International Business Machines Corporation | Integrated etch stop for capped gate and method for manufacturing the same |
CN108885974A (zh) * | 2016-03-28 | 2018-11-23 | 英特尔公司 | 用于光刻边缘放置误差提前矫正的对齐节距四等分图案化 |
US9799514B1 (en) | 2016-04-07 | 2017-10-24 | Globalfoundries Inc. | Protecting, oxidizing, and etching of material lines for use in increasing or decreasing critical dimensions of hard mask lines |
US10068766B2 (en) | 2016-04-07 | 2018-09-04 | Globalfoundries Inc. | Oxidizing and etching of material lines for use in increasing or decreasing critical dimensions of hard mask lines |
US20170294354A1 (en) * | 2016-04-07 | 2017-10-12 | Globalfoundries Inc. | Integration of nominal gate width finfets and devices having larger gate width |
CN105977153B (zh) * | 2016-05-17 | 2019-09-17 | 上海华力微电子有限公司 | 超浅结退火方法 |
US10170591B2 (en) * | 2016-06-10 | 2019-01-01 | International Business Machines Corporation | Self-aligned finFET formation |
US9876097B2 (en) * | 2016-06-14 | 2018-01-23 | International Business Machines Corporation | Selectively formed gate sidewall spacer |
US9853127B1 (en) | 2016-06-22 | 2017-12-26 | International Business Machines Corporation | Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process |
US10910223B2 (en) | 2016-07-29 | 2021-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doping through diffusion and epitaxy profile shaping |
DE102016121443A1 (de) * | 2016-07-29 | 2018-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dotierung durch Diffusion und Epitaxie-Profilformen |
US10297614B2 (en) * | 2016-08-09 | 2019-05-21 | International Business Machines Corporation | Gate top spacer for FinFET |
JP6670707B2 (ja) | 2016-08-24 | 2020-03-25 | 東京エレクトロン株式会社 | 基板処理方法 |
US10083961B2 (en) | 2016-09-07 | 2018-09-25 | International Business Machines Corporation | Gate cut with integrated etch stop layer |
US9698251B1 (en) | 2016-09-26 | 2017-07-04 | International Business Machines Corporation | Fin reveal last for finfet |
US9754798B1 (en) | 2016-09-28 | 2017-09-05 | International Business Machines Corporation | Hybridization fin reveal for uniform fin reveal depth across different fin pitches |
US10128239B2 (en) | 2016-10-17 | 2018-11-13 | International Business Machines Corporation | Preserving channel strain in fin cuts |
TWI749100B (zh) | 2016-11-14 | 2021-12-11 | 日商東京威力科創股份有限公司 | 奈米線fet裝置用閘極間隔件的形成方法 |
US10381267B2 (en) | 2017-04-21 | 2019-08-13 | International Business Machines Corporation | Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch |
US10242867B2 (en) * | 2017-05-18 | 2019-03-26 | Globalfoundaries Inc. | Gate pickup method using metal selectivity |
US11461620B2 (en) * | 2017-07-05 | 2022-10-04 | Samsung Electronics Co., Ltd. | Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETs |
US10374066B2 (en) | 2017-07-11 | 2019-08-06 | International Business Machines Corporation | Fin and shallow trench isolation replacement to prevent gate collapse |
US10186599B1 (en) | 2017-07-20 | 2019-01-22 | International Business Machines Corporation | Forming self-aligned contact with spacer first |
US10483168B2 (en) * | 2017-11-15 | 2019-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low-k gate spacer and formation thereof |
KR102403723B1 (ko) | 2017-12-15 | 2022-05-31 | 삼성전자주식회사 | 반도체 장치 및 그의 제조 방법 |
US10204781B1 (en) | 2018-02-14 | 2019-02-12 | Applied Materials, Inc. | Methods for bottom up fin structure formation |
US10439047B2 (en) | 2018-02-14 | 2019-10-08 | Applied Materials, Inc. | Methods for etch mask and fin structure formation |
US11101348B2 (en) * | 2018-07-25 | 2021-08-24 | Globalfoundries U.S. Inc. | Nanosheet field effect transistor with spacers between sheets |
US10770302B2 (en) * | 2018-09-27 | 2020-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor FinFET device and method |
US10872826B2 (en) * | 2018-10-31 | 2020-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field-effect transistor device and method |
US11201060B2 (en) * | 2019-04-17 | 2021-12-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device with metal gate stack |
DE102020112695A1 (de) * | 2019-05-31 | 2020-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optimiertes näheprofil für verspanntes source/drain-merkmal und verfahren zu dessen herstellung |
CN112071908A (zh) * | 2019-06-10 | 2020-12-11 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN110752156A (zh) * | 2019-10-28 | 2020-02-04 | 中国科学院微电子研究所 | 一种鳍状结构的制备方法以及半导体器件的制备方法 |
US11476347B2 (en) | 2020-05-20 | 2022-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Processes for removing spikes from gates |
DE102020124588A1 (de) * | 2020-05-20 | 2021-11-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Prozesse zum entfernen von spitzen von gates |
US11757021B2 (en) * | 2020-08-18 | 2023-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices with fin-top hard mask and methods for fabrication thereof |
KR20220090672A (ko) | 2020-12-22 | 2022-06-30 | 삼성전자주식회사 | 반도체 소자 |
CN112768529B (zh) * | 2021-01-28 | 2022-09-23 | 福建省晋华集成电路有限公司 | 一种半导体器件制备方法 |
US11562910B2 (en) | 2021-03-19 | 2023-01-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method for forming thereof |
US11791383B2 (en) * | 2021-07-28 | 2023-10-17 | Infineon Technologies Ag | Semiconductor device having a ferroelectric gate stack |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1534745A (zh) * | 2003-03-26 | 2004-10-06 | ̨������·����ɷ�����˾ | 多栅极晶体管的结构及其制造方法 |
CN101010788A (zh) * | 2004-07-06 | 2007-08-01 | 英特尔公司 | 用于制作具有高k栅介电层和金属栅电极的半导体器件的方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6974729B2 (en) * | 2002-07-16 | 2005-12-13 | Interuniversitair Microelektronica Centrum (Imec) | Integrated semiconductor fin device and a method for manufacturing such device |
KR100487567B1 (ko) * | 2003-07-24 | 2005-05-03 | 삼성전자주식회사 | 핀 전계효과 트랜지스터 형성 방법 |
US7018551B2 (en) * | 2003-12-09 | 2006-03-28 | International Business Machines Corporation | Pull-back method of forming fins in FinFets |
US7488650B2 (en) | 2005-02-18 | 2009-02-10 | Infineon Technologies Ag | Method of forming trench-gate electrode for FinFET device |
US20090321849A1 (en) * | 2006-05-23 | 2009-12-31 | Nec Corporation | Semiconductor device, integrated circuit, and semiconductor manufacturing method |
US7825477B2 (en) * | 2007-04-23 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with localized stressor |
JP2008282901A (ja) * | 2007-05-09 | 2008-11-20 | Sony Corp | 半導体装置および半導体装置の製造方法 |
US7923337B2 (en) | 2007-06-20 | 2011-04-12 | International Business Machines Corporation | Fin field effect transistor devices with self-aligned source and drain regions |
JP5457045B2 (ja) * | 2009-02-12 | 2014-04-02 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US8313999B2 (en) * | 2009-12-23 | 2012-11-20 | Intel Corporation | Multi-gate semiconductor device with self-aligned epitaxial source and drain |
DE102010029527B4 (de) * | 2010-05-31 | 2012-04-05 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Herstellung eines selbstjustierenden Transistors mit Mehrfachgate auf einem Vollsubstrat |
US8647952B2 (en) * | 2010-12-21 | 2014-02-11 | Globalfoundries Inc. | Encapsulation of closely spaced gate electrode structures |
CN102655094B (zh) * | 2011-03-04 | 2015-09-30 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
-
2011
- 2011-06-10 US US13/157,812 patent/US8637359B2/en not_active Expired - Fee Related
-
2012
- 2012-05-11 DE DE102012207913.0A patent/DE102012207913B4/de not_active Expired - Fee Related
- 2012-06-08 CN CN201210189904.4A patent/CN102820230B/zh active Active
-
2014
- 2014-01-07 US US14/149,295 patent/US8969965B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1534745A (zh) * | 2003-03-26 | 2004-10-06 | ̨������·����ɷ�����˾ | 多栅极晶体管的结构及其制造方法 |
CN101010788A (zh) * | 2004-07-06 | 2007-08-01 | 英特尔公司 | 用于制作具有高k栅介电层和金属栅电极的半导体器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20140117464A1 (en) | 2014-05-01 |
US20120313170A1 (en) | 2012-12-13 |
US8969965B2 (en) | 2015-03-03 |
DE102012207913B4 (de) | 2014-05-15 |
CN102820230A (zh) | 2012-12-12 |
DE102012207913A1 (de) | 2012-12-13 |
US8637359B2 (en) | 2014-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102820230B (zh) | 后形成鳍的置换型金属栅极finfet | |
TWI737391B (zh) | 具有強健內間隔件之環繞式閘極場效電晶體及方法 | |
US10770591B2 (en) | Source/drain contacts for non-planar transistors | |
KR102558315B1 (ko) | 강유전성 랜덤 액세스 메모리 디바이스들 및 방법들 | |
US9368502B2 (en) | Replacement gate multigate transistor for embedded DRAM | |
JP5299928B2 (ja) | Uゲートトランジスタ製造方法 | |
US8928083B2 (en) | Diode structure and method for FINFET technologies | |
US20190067115A1 (en) | Gate cut method for replacement metal gate | |
US8497198B2 (en) | Semiconductor process | |
US10170634B2 (en) | Wire-last gate-all-around nanowire FET | |
US8969963B2 (en) | Vertical source/drain junctions for a finFET including a plurality of fins | |
US9214529B2 (en) | Fin Fet device with independent control gate | |
US11315922B2 (en) | Fin cut to prevent replacement gate collapse on STI | |
TW200908160A (en) | Fin field effect transistor devices with self-aligned source and drain regions | |
CN101714507A (zh) | 具有金属栅极堆叠的半导体装置及其制造方法 | |
US20150162438A1 (en) | Memory device employing an inverted u-shaped floating gate | |
US20140231913A1 (en) | Trilayer SIT Process with Transfer Layer for FINFET Patterning | |
TW202215493A (zh) | 半導體裝置及其形成方法 | |
US20120306005A1 (en) | Trough channel transistor and methods for making the same | |
US20180301469A1 (en) | Finfet devices with multiple channel lengths | |
CN108573850B (zh) | 一种半导体器件的制造方法 | |
CN115910928A (zh) | 半导体结构及其形成方法 | |
TWI514480B (zh) | 多閘極電晶體元件之製作方法 | |
CN115377101A (zh) | 半导体结构及其形成方法 | |
CN115602717A (zh) | 半导体结构及其形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161229 Address after: Cayman Islands Grand Cayman Patentee after: INTERNATIONAL BUSINESS MACHINES Corp. Address before: The United States Delaware Patentee before: Globalfoundries second American LLC Effective date of registration: 20161229 Address after: The United States Delaware Patentee after: Globalfoundries second American LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180328 Address after: Ontario, Canada Patentee after: International Business Machines Corp. Address before: Cayman Islands Grand Cayman Patentee before: INTERNATIONAL BUSINESS MACHINES Corp. |