CN102666909B - 透明导电膜的制造方法、透明导电膜的制造装置、溅射靶及透明导电膜 - Google Patents

透明导电膜的制造方法、透明导电膜的制造装置、溅射靶及透明导电膜 Download PDF

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Publication number
CN102666909B
CN102666909B CN201080051495.0A CN201080051495A CN102666909B CN 102666909 B CN102666909 B CN 102666909B CN 201080051495 A CN201080051495 A CN 201080051495A CN 102666909 B CN102666909 B CN 102666909B
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China
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nesa coating
component
ito film
film
target
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Chinese (zh)
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CN102666909A (zh
Inventor
汤川富之
武井応树
小林大士
赤松泰彦
清田淳也
增泽健二
石桥晓
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Ulvac Inc
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Ulvac Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Non-Insulated Conductors (AREA)
CN201080051495.0A 2009-11-19 2010-11-16 透明导电膜的制造方法、透明导电膜的制造装置、溅射靶及透明导电膜 Active CN102666909B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-263966 2009-11-19
JP2009263966 2009-11-19
PCT/JP2010/006713 WO2011061922A1 (fr) 2009-11-19 2010-11-16 Procédé et dispositif de fabrication pour film conducteur transparent, cible de pulvérisation, et film conducteur transparent

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201410341203.7A Division CN104213085A (zh) 2009-11-19 2010-11-16 透明导电膜的制造方法、透明导电膜的制造装置、溅射靶及透明导电膜

Publications (2)

Publication Number Publication Date
CN102666909A CN102666909A (zh) 2012-09-12
CN102666909B true CN102666909B (zh) 2016-06-22

Family

ID=44059409

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201080051495.0A Active CN102666909B (zh) 2009-11-19 2010-11-16 透明导电膜的制造方法、透明导电膜的制造装置、溅射靶及透明导电膜
CN201410341203.7A Pending CN104213085A (zh) 2009-11-19 2010-11-16 透明导电膜的制造方法、透明导电膜的制造装置、溅射靶及透明导电膜

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CN201410341203.7A Pending CN104213085A (zh) 2009-11-19 2010-11-16 透明导电膜的制造方法、透明导电膜的制造装置、溅射靶及透明导电膜

Country Status (5)

Country Link
JP (2) JP5726752B2 (fr)
KR (4) KR20170005149A (fr)
CN (2) CN102666909B (fr)
TW (2) TWI500786B (fr)
WO (1) WO2011061922A1 (fr)

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JP2013012409A (ja) * 2011-06-29 2013-01-17 Toshiro Kuji 透明導電膜の生成方法及び透明導電膜生成装置
CN102651251A (zh) * 2012-05-29 2012-08-29 番禺南沙殷田化工有限公司 一种低温结晶ito透明导电薄膜及其制备方法
CN102945694B (zh) * 2012-11-08 2015-05-20 深圳南玻显示器件科技有限公司 Ito基板及其制备方法
KR102061790B1 (ko) 2013-02-05 2020-02-12 삼성디스플레이 주식회사 유기 발광 표시 장치의 투명전극 제조방법 및 그 투명전극을 구비한 유기 발광 표시 장치
JP5805799B2 (ja) * 2013-05-15 2015-11-10 日本写真印刷株式会社 タッチセンサおよびタッチセンサモジュール
US9988707B2 (en) * 2014-05-30 2018-06-05 Ppg Industries Ohio, Inc. Transparent conducting indium doped tin oxide
CN104746003B (zh) * 2014-12-24 2017-09-26 信利（惠州）智能显示有限公司 氧化铟锡低温镀膜方法
JP6553950B2 (ja) * 2015-05-27 2019-07-31 日東電工株式会社 透明導電性フィルムおよびその製造方法
JP6418708B2 (ja) * 2016-09-12 2018-11-07 株式会社アルバック 透明導電膜付き基板の製造方法、透明導電膜付き基板の製造装置、及び透明導電膜付き基板
CN106893132B (zh) * 2017-03-30 2019-11-15 维沃移动通信有限公司 一种有机曲面壳体加工方法和有机曲面壳体
WO2018211793A1 (fr) * 2017-05-15 2018-11-22 三井金属鉱業株式会社 Cible de pulvérisation cathodique pour film conducteur transparent
KR102375637B1 (ko) * 2017-08-08 2022-03-17 미쓰이금속광업주식회사 산화물 소결체 및 스퍼터링 타깃
CN108149210B (zh) * 2017-12-26 2019-12-31 哈尔滨工业大学 一种长波红外增透保护膜的制备方法
JP7112854B2 (ja) * 2018-02-19 2022-08-04 住友化学株式会社 酸化錫粉末
WO2021240962A1 (fr) * 2020-05-25 2021-12-02 日東電工株式会社 Procédé de production d'une feuille conductrice transmettant la lumière
CN117229051B (zh) * 2023-09-21 2024-05-10 株洲火炬安泰新材料有限公司 一种LaTb共掺杂ITO靶材及其制备方法与应用

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WO2008114588A1 (fr) * 2007-03-20 2008-09-25 Idemitsu Kosan Co., Ltd. Ice cible de pulvérisation, film semi-conducteur d'oxyde et dispositif semi-conducteur
JP2008243928A (ja) * 2007-03-26 2008-10-09 Idemitsu Kosan Co Ltd 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
WO2008139860A1 (fr) * 2007-05-07 2008-11-20 Idemitsu Kosan Co., Ltd. Film fin à semi-conducteur, procédé de fabrication d'un film fin à semi-conducteur et élément semi-conducteur

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US5433901A (en) * 1993-02-11 1995-07-18 Vesuvius Crucible Company Method of manufacturing an ITO sintered body
JP3501614B2 (ja) * 1997-02-26 2004-03-02 株式会社オプトロン Ｉｔｏ焼結体およびその製造方法ならびに前記ｉｔｏ焼結体を用いたｉｔｏ膜の成膜方法
JP2000054115A (ja) * 1998-07-31 2000-02-22 Oputoron:Kk Ｉ．ｔ．ｏ焼結体の製造方法及びｉ．ｔ．ｏ薄膜の形成方法
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KR100744017B1 (ko) * 2001-06-26 2007-07-30 미츠이 긴조쿠 고교 가부시키가이샤 고저항 투명 도전막용 스퍼터링 타겟 및 고저항 투명도전막의 제조방법
EP2264211B1 (fr) * 2001-08-02 2012-02-15 Idemitsu Kosan Co., Ltd. Cible de pulverisation
JP4285019B2 (ja) * 2003-02-07 2009-06-24 住友金属鉱山株式会社 透明導電性薄膜とその製造方法、それを用いた表示パネル用透明導電性基材及びエレクトロルミネッセンス素子
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JP5000230B2 (ja) * 2006-08-10 2012-08-15 出光興産株式会社 酸化ランタン含有酸化物ターゲット
JP2008179850A (ja) * 2007-01-24 2008-08-07 Toshiba Matsushita Display Technology Co Ltd アモルファスｉｔｏ膜の成膜方法およびその装置
JP4807331B2 (ja) * 2007-06-18 2011-11-02 住友金属鉱山株式会社 酸化インジウム系スパッタリングターゲットの製造方法
KR101155358B1 (ko) * 2007-07-13 2012-06-19 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 복합 산화물 소결체, 아모르퍼스 복합 산화막의 제조 방법, 아모르퍼스 복합 산화막, 결정질 복합 산화막의 제조 방법 및 결정질 복합 산화막
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WO2008114588A1 (fr) * 2007-03-20 2008-09-25 Idemitsu Kosan Co., Ltd. Ice cible de pulvérisation, film semi-conducteur d'oxyde et dispositif semi-conducteur
JP2008243928A (ja) * 2007-03-26 2008-10-09 Idemitsu Kosan Co Ltd 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
WO2008139860A1 (fr) * 2007-05-07 2008-11-20 Idemitsu Kosan Co., Ltd. Film fin à semi-conducteur, procédé de fabrication d'un film fin à semi-conducteur et élément semi-conducteur

Also Published As

Publication number Publication date
JP6060202B2 (ja) 2017-01-11
TWI500786B (zh) 2015-09-21
CN102666909A (zh) 2012-09-12
KR20140071502A (ko) 2014-06-11
TW201538764A (zh) 2015-10-16
WO2011061922A1 (fr) 2011-05-26
CN104213085A (zh) 2014-12-17
KR20170005149A (ko) 2017-01-11
JP5726752B2 (ja) 2015-06-03
KR20120070597A (ko) 2012-06-29
TW201124546A (en) 2011-07-16
TWI620827B (zh) 2018-04-11
JPWO2011061922A1 (ja) 2013-04-04
KR20180063386A (ko) 2018-06-11
JP2015158014A (ja) 2015-09-03

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