CN102652351A - 在高剂量植入剥除前保护硅的增强式钝化工艺 - Google Patents
在高剂量植入剥除前保护硅的增强式钝化工艺 Download PDFInfo
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Abstract
本发明提供用于从工件表面剥除光致抗蚀剂并移除离子植入相关残留物的改进的方法及设备。根据各种实施例,使所述工件暴露于钝化等离子体,允许冷却一时间周期,并接着使其暴露于基于氧气或基于氢气的等离子体以移除所述光致抗蚀剂及离子植入相关残留物。本发明的方面包含减小硅损失,从而留下极少或不留下残留物,同时维持可接受的剥除速率。在某些实施例中,方法及设备在高剂量离子植入工艺之后移除光致抗蚀剂材料。
Description
相关申请案的交叉参考
本申请案根据34USC§119(e)主张2009年12月11日申请的第61/285,918号美国临时专利申请案的权益,所述临时专利申请案以引用的方式并入本文中。
技术领域
本发明涉及从工件表面移除或剥除光致抗蚀剂材料并移除相关残留物的方法及设备。在某些实施例中,本申请案涉及在离子植入或等离子体辅助掺杂植入之后用于剥除抗蚀剂(低剂量或高剂量植入的抗蚀剂)的方法及设备。
背景技术
光致抗蚀剂是在处理期间在工件表面(例如半导体晶片)上形成图案化涂层的某些制造工艺中所使用的感光材料。在使所述光致抗蚀剂涂覆的表面暴露于高能量辐射的图案之后,移除所述光致抗蚀剂的部分以显露下表面,并使剩余表面受到保护。在未经遮盖表面及所述剩余光致抗蚀剂上执行半导体工艺(例如蚀刻、沉积及离子植入)。在执行一个或一个以上半导体工艺之后,以剥除操作移除所述剩余光致抗蚀剂。
发明内容
本发明提供用于从工件表面剥除光致抗蚀剂并移除离子植入相关残留物的改进的方法及设备。根据各种实施例,使所述工件暴露于钝化等离子体,允许冷却一时间周期,并接着使其暴露于基于氧气或基于氢气的等离子体以移除所述光致抗蚀剂及离子植入相关残留物。本发明的方面包含减小硅损失,从而使残留物极少或无残留物,同时维持可接受的剥除速率。在某些实施例中,方法及设备在高剂量离子植入工艺之后移除光致抗蚀剂材料。
本发明的一方面涉及一种在反应腔室中从工件表面移除材料的方法,且涉及使所述工件暴露于产自成形气体的等离子体;在使所述工件暴露于所述成形气体等离子体之后,允许晶片安置于非等离子体环境中持续至少30秒的时间周期;且在允许所述晶片安置之后,使所述晶片暴露于基于氧气或基于氢气的等离子体以移除所述材料。
根据各种实施例,允许所述工件安置持续至少大约100秒、至少大约150秒、至少大约200秒或至少大约220秒。
在某些实施例中,所述基于氧气或基于氢气的等离子体中的至少一者包含氟物质;在其它实施例中,所述基于氧气或基于氢气的等离子体中的至少一者都不包含氟物质。从所述工件表面移除的材料可为高剂量植入的抗蚀剂。在某些实施例中,所述成形气体等离子体是经远程产生。在某些实施例中,在所述工件暴露于所述成形气体等离子体之后于所述工件的所暴露硅部分上形成保护膜。所述保护膜可为SixNy膜。
本发明的另一方面涉及一种用于从包含反应腔室的工件表面移除材料的设备,所述反应腔室包含等离子体源、置于所述等离子体源下游的喷洒头及所述喷洒头下游的工件支撑件,所述工件支撑件包括底座及控制支撑在所述工件支撑件上的工件的温度的温度控制机构;及用于执行指令集的控制器,所述指令集包含用于使所述工件暴露于产自成形气体的等离子体的指令;在使所述工件暴露于所述成形气体等离子体之后,允许晶片安置于非等离子体环境中持续至少30秒的时间周期;且在允许晶片安置之后,使所述晶片暴露于基于氧气或基于氢气的等离子体以移除材料。
以下将参看相关图式更详细地描述本发明的这些及其它特征及优点。
附图说明
图1A到1D描绘离子植入及剥除操作前后半导体装置制造的各个阶段。
图2是说明依照本发明的某些实施例的操作的工艺流程图。
图3是展示随钝化后等待时间而变的硅损失的图表。
图4是展示适合用于实施本发明的方面的设备的示意图。
图5展示适合用于实施本发明的方面的多站循序架构。
具体实施方式
介绍
在本发明的以下详细描述中,陈述许多具体实施例以提供对本发明的透彻理解。然而,所属领域的技术人员将明白,本发明可在并无这些具体细节的情况下或通过使用替代性元件或工艺来实践。在其它情况中,并未详细描述众所周知的工艺、程序及组件,以免不必要地混淆本发明的方面。
在本申请案中,术语“工件(work piece)”、“半导体晶片(semiconductor wafer)”、“晶片(wafer)”及“经部分制造的集成电路(partially fabricated integrated circuit)”将可互换使用。所属领域的技术人员将了解,术语“经部分制造的集成电路(partially fabricatedintegrated circuit)”在其上集成电路制造的多个阶段的任一阶段期间可表示硅晶片。以下详细描述假设在晶片上实施本发明。然而,本发明并非局限于此。所述工件可为各种形状、大小及材料。除半导体晶片之外,可利用本发明的其它工件包含各种物件(例如显示器、印刷电路板及类似物)。
光致抗蚀剂是在处理期间在工件表面(例如半导体晶片)上形成图案化涂层的某些制造工艺中所使用的感光材料。在使所述光致抗蚀剂涂覆的表面暴露于高能量辐射的图案之后,移除所述光致抗蚀剂的一部分以显露下表面,并使剩余表面受到保护。在未经遮盖表面及剩余光致抗蚀剂上执行半导体工艺(例如蚀刻、沉积及离子植入)。在执行一个或一个以上半导体工艺之后,以剥除操作移除剩余光致抗蚀剂。
在离子植入期间,掺杂剂离子(例如硼离子、二氟化硼离子、铟离子、镓离子、铊离子、磷离子、砷离子、锑离子、铋离子或锗离子)朝向工件目标加速。所述离子植入所述工件的所暴露区域以及剩余光致抗蚀剂表面中。所述工艺可形成阱区域(源极/漏极)及轻微掺杂漏极(LDD)区域及双扩散漏极(DDD)区域。所述离子植入物用植入物质浸渍抗蚀剂并使表面耗尽氢。所述抗蚀剂的外层或外壳形成碳化层,所述碳化层的密度可能比下伏块体抗蚀剂层更大。这两个层具有不同热膨胀速率并在不同速率下对剥除工艺作出反应。
在后高剂量离子植入抗蚀剂中在外层与块体层之间的差别是极显著的。在高剂量植入中,离子剂量可大于1×1015个离子/平方厘米,且能量可从10Kev到大于100Kev。传统高剂量植入剥除(HDIS)工艺采用氧气化学方法,其中远离工艺腔室形成单价氧气等离子体且接着使所述单价氧气等离子体指向工件表面处。活性氧与光致抗蚀剂结合以形成用真空泵移除的气态副产物。对于HDIS,需要额外气体来移除具有氧气的所植入掺杂剂。
主要的HDIS考虑包含剥除速率、残余物量及所暴露下伏膜层的膜损失。残留物通常是在HDIS及剥除之后出现于衬底表面上。残留物可由于在抗蚀剂中的高能量植入、外壳的不完全移除及/或植入原子的氧化期间的溅镀而产生。在剥除之后,表面应无残留物或大致无残留物,以确保高产量并消除对额外残留物移除处理的需要。可由过剥除(即,超过移除所有光致抗蚀剂标称所需的剥除工艺的继续)而移除残留物。不幸地是,在传统HDIS操作中,过剥除有时移除一些下伏功能装置结构。在装置层处,即使来自晶体管源极/漏极区域的硅损失极小,其也可不利地影响装置性能及产量,对于在<32纳米设计规则或更小的条件下制造的极浅结装置而言尤其如此。
如先前提到的,本发明的方法及设备可用以在高剂量离子植入之后高效率并有效地移除光致抗蚀剂材料。本发明并不限于高剂量植入剥除(HDIS)。本发明也并不限于任何特定种类的所植入掺杂剂。举例来说,所描述的方法及设备可在中等或低剂量植入之后与剥除一起有效地使用。虽然已讨论特定掺杂剂离子(例如硼离子、砷离子及亚磷离子),但是所描述的方法及设备可有效地用以剥除经其它掺杂剂(例如氮、氧、碳、锗及铝)浸渍的抗蚀剂。
本发明的方法及设备使用由成形气体生产的钝化等离子体。所述方法及设备还使用光致抗蚀剂剥除及产自含有氧气及/或氢气的等离子体气体的离子移除等离子体。在某些实施例中,所述气体还含有含氟气体、弱氧化剂及一个或一个以上额外成分。所属领域的技术人员将认识到,等离子体中存在的实际物质可为源于用于产生本文中所描述的等离子体的特定气体的不同离子、基团及分子的混合物。举例来说,应注意到:由于等离子体与有机光致抗蚀剂及其它残留物发生反应并将其分解,所以反应腔室中可存在其它物质(例如小碳氢化合物、二氧化碳、水蒸气及其它挥发性成分)。所属领域的技术人员还将认识到,引入等离子体中的初始气体通常不同于等离子体中存在的气体以及在剥除期间接触工件表面的气体。
图1A到1D描绘离子植入及剥除操作前后半导体制造的各个阶段。图1A展示经光致抗蚀剂材料103涂覆的半导体衬底101。衬底101可包含一个或一个以上沉积膜层(例如,氧化物膜、硅化物接触件及/或多晶硅膜),或可为包含例如绝缘体上硅型衬底在内的裸露硅衬底。所述光致抗蚀剂材料最初涂覆整个衬底表面。接着使光致抗蚀剂通过掩模暴露于所产生的图案化辐射并显影以移除所述材料的部分(例如,图1A中所展示在剩余光致抗蚀剂材料130之间的开口104)。
接着,使衬底暴露于离子植入工艺。在离子植入期间,工件的表面或晶片被植入掺杂剂离子。所述工艺可为(例如)等离子体浸渍离子植入(PIII)或离子束植入。离子冲击包含所暴露硅层101及光致抗蚀剂103的衬底表面。随着高能量离子植入,可使少量下伏材料107溅镀到光致抗蚀剂侧壁。参见图1B。此材料可包含一些植入物质、等离子体或离子束中的其它材料及植入的副产物。它们包含硅、铝、碳、氟、钛、其它接触材料(例如钴)及元素与化合物两种形式的氧。实际物质取决于在离子植入之前的衬底的组合物、光致抗蚀剂及所植入物质。
在所暴露硅层101处,产生掺杂区域109。离子能量或冲击强度决定掺杂区域的深度或厚度。离子流密度决定掺杂程度。
离子还浸渍产生外壳层105的光致抗蚀剂表面。外壳层105可为碳化并显著交联聚合物链。所述外壳通常耗尽氢并经植入物质浸渍。外壳层105的密度大于块体抗蚀剂层103的密度。相对密度取决于离子流,而外壳层的厚度取决于离子能量。
此外壳层105比下方的块体光致抗蚀剂103更难以剥除。外壳层的移除速率可比下伏块体慢50%或75%。保护硅的增强式钝化工艺在保护硅的高剂量植入增强式钝化工艺之前,保护硅的高剂量植入增强式钝化工艺在高剂量植入光致抗蚀剂之前。块体光致抗蚀剂含有相对较高水平的经化学结合的氮及一些其初始浇铸溶剂。在升高的晶片温度下(例如,高于150℃到高于200℃),块体抗蚀剂可脱气并相对于外壳层膨胀。接着,整个光致抗蚀剂可随着下伏块体光致抗蚀剂在外壳下增强压力而“爆裂(pop)”。光致抗蚀剂爆裂是微粒及工艺缺陷的原因,这是因为残留物尤其难以从晶片表面及腔室内部部件清除。随着高剂量离子植入,在外壳与下伏块体抗蚀剂层之间的密度差更高。外壳也会较厚。
图1C展示未能完全移除光致抗蚀剂103及侧壁溅镀残留物107的剥除之后的衬底。侧壁溅镀残留物107可包含在传统剥除化学方法下并未形成挥发性化合物的微粒。这些微粒在传统剥除操作之后可保留下来。残留物还可包含由基于氧气的剥除化学方法中所使用的活性氧形成的植入物质的氧化物(例如氧化硼及氧化砷)。外壳105的部分还可保留于衬底上。因为几何形状的缘故,光致抗蚀剂通孔的底部处的外壳侧壁及拐角可能难以剥除。在一些情况中,这些残留物微粒可由过剥除、使用含氟化学物或湿式清洗所述晶片来移除。
硅损失随抗蚀剂厚度、外壳厚度及百分比过剥除而变。移除较厚的抗蚀剂的较长且较具侵蚀性的过剥除也可移除更多的硅。对于具有较厚的外壳的抗蚀剂,外壳层与块体抗蚀剂层之间的差别更明显。较厚的外壳侧壁及拐角更难以剥除。因此,经设计以移除厚的外壳的剥除工艺也往往移除更多的硅。除残留物移除之外,过剥除还可用以解决抗蚀剂均匀性及几何形状问题。过剥除是超过移除所有光致抗蚀剂标称所需的剥除工艺的继续。如果在晶片的一些区域(但非其它)中完全移除光致抗蚀剂,那么所述剥除工艺的继续将产生待从已剥除的区域移除的额外材料(通常是硅及氧化硅)。
图1D展示已移除所有残留物之后的衬底。根据各种实施例,残留物是在无额外硅损失或氧化及最小延迟的情况下移除。在某些实施例中,所述剥除工艺不留下残留物并因此减少工艺步骤的数目。
本文中所提供的是减小高剂量植入剥除(HDIS)工艺的硅损失的方法,但是如上所述,所述方法可在中等或低剂量植入或其它光致抗蚀剂剥除工艺之后与剥除一起有效地使用。本文中所描述的方法提供钝化层以在剥除之前防止硅损失,且并不限于特定剥除化学方法。
图2是说明根据某些实施例的方法中的操作的工艺流程图200。首先,在操作201中提供具有光致抗蚀剂及植入残留材料的晶片。可对能够含有等离子体的腔室提供所述晶片。虽然并未描绘,但任选地将所述晶片预热(操作201之前、期间或之后)到足够低以防止爆裂的固定温度,并在另外操作中将所述晶片预热到足够高以提供用于形成钝化层的能量及可接受的蚀刻速率的固定温度。接着在操作203中使所述晶片暴露于产自成形气体的等离子体。所述成形气体包括氢气及惰性稀释剂(例如,氮气、氦气或类似物)或其组合。在本发明的示范性实施例中,所述成形气体是大约0.5摩尔百分比(%)到大约10摩尔百分比(%)氢气。在本发明的特定实施例中,所述成形气体是大约3%到大约6%氢气(例如,4%氢气)。在某些实施例中,使用纯氮气,其中基本上没有氢气。已发现纯氮气可提供类似于成形气体的钝化效应。
使所述晶片暴露于成形气体等离子体持续一时间周期(例如,大约10秒到90秒(例如,大约20秒到40秒))。在许多实施例中,等离子体是经远程产生的等离子体,但是其可为原位等离子体。在某些实施例中,所述等离子体是产自基本上由成形气体组成的气体。在其它实施例中,可添加其它物质。在某些实施例中,在气体入口到等离子体产生器中大致不存在氧气或氟气。
接着在操作205中,等离子体消失且晶片安置一时间周期。在某些实施例中,允许晶片在此操作期间冷却(例如)到大约35C。在并未由特定理论限制的情况下,相信在所暴露硅上形成保护表面以缓慢防止氧化或蚀刻受可包含氟物质的后继基于氧气或基于氢气的剥除化学物质影响。保护表面可为SixNy膜。
出人意料地发现,在操作203与后继剥除操作之间的等待时间对减小硅损失至关重要。图3是展示随暴露于成形气体等离子体与使用含有氟气的基于氢气的化学物质的后继剥除工艺之间的等待时间(秒)而变的硅损失(埃)的图表。所述硅损失随着等待时间增加而急剧降低,最终稳定在大约220秒。根据各种实施例,所述等待时间是至少大约30秒、至少大约60秒、至少大约100秒、至少大约120秒、至少大约140秒、至少大约160秒、至少大约180秒、至少大约200秒、至少大约220秒、至少大约240秒、至少大约260秒或至少大约280秒。图3中所观察到的效果是出人意料的,因为将期望形成SixNy膜的反应的化学动力学更快速。
一旦完成等待周期,就在操作207中执行剥除工艺。所述剥除工艺可使用一个或一个以上基于氧气或基于氢气的等离子体。在某些实施例中,剥除化学物质在一个或一个以上操作中额外含有氟物质。可馈送到等离子体产生器以产生此物质的氟化合物包含三氟化氮(NF3)、六氟化硫(SF6)、六氟乙烷(C2F6)、四氟甲烷(CF4)、三氟甲烷(CHF3)、二氟甲烷(CH2F2)、八氟丙烷(C3F8)、八氟环丁烷(C4F8)、八氟[1-]丁烷(C4F8)、八氟[2-]丁烷(C4F8)、八氟异丁烯(C4F8)、氟(F2)及类似物。
虽然本文中所描述的方法并不限于任何特定剥除化学方法,但是移除光致抗蚀剂及HDI残留物的实例性等离子体包含产自下列材料的等离子体:
O2/NF3
O2/CF4
O2/N2
H2/CO2/NF3
H2/CO2/CF4
H2/CO2/NF3/CF4
H2/CO2
H2/N2
在许多实施例中,执行具有不同化学过程的多个操作以完全移除光致抗蚀剂及残留物。在某些实施例中,将成形气体添加到那些HDI剥除操作的一者或一者以上。举例来说,在某些实施例中,将成形气体添加到所有不含氟等离子体操作中。已发现在含氟站中使用成形气体或纯氮气可不利地影响硅损失。在并未由特定理论限制的情况下,相信这可能是由于成形气体中的氮气促使NF3的分裂从而释放更多F-离子。通常,在这些操作之后并未赋予显著的等待时间,但是在某些实施例中,可能赋予显著的等待时间。实例如下:
O2/FG与成形气体供应大约14%到25%容积;
H2/CO2/FG与成形气体供应大约40%到60%容积;
应注意到:操作203及205中所描述的钝化工艺可在所述工艺中的其它阶段处(例如,一个或一个以上剥除操作之间)执行或重复。在某些实施例中,仅在这些操作之间插入操作203。
等离子体产生
依照本发明可使用各种类型的等离子体源,其包含RF、DC及基于微波的等离子体源。在优选实施例中,使用下游RF等离子体源。通常,用于300毫米晶片的RF等离子体功率在大约300瓦特到大约10千瓦特之间变化。在一些实施例中,RF等离子体功率是在大约2000瓦特与5000瓦特之间(例如,3500W)。
喷洒头组合件
根据本发明的各种实施例,等离子体气体是经由喷洒头组合件分布于加工表面。喷洒头组合件可经接地或具有所施加电压以吸引某些带电物质同时不影响中性物质到晶片的流动(例如,0瓦特到1000瓦特偏压)。等离子体中的许多带电物质在喷洒头处再组合。所述组合件包含喷洒头自身,其中喷洒头可为具有引导等离子体及惰性气体混合物进入反应腔室的孔的金属板。所述喷洒头经由较大区域重新分布来自等离子体源的活性氢,从而允许使用较小的等离子体源。喷洒头孔的数目及配置可经设定以优化剥除速率及剥除速率均匀性。如果等离子体源是位于晶片中心,那么喷洒头孔在喷洒头的中心优选地为较小且较少,以将反应性气体推向外部区域。所述喷洒头可具有至少100个孔。合适的喷洒头包含可购自加州圣荷西市诺发系统(Novellus Systems)公司的Gamma xPR喷洒头或GxT插入喷洒头。在不存在喷洒头组合件的实施例中,所述等离子体直接进入工艺腔室。
工艺腔室
所述工艺腔室可为用于正执行的剥除操作的任何适合的反应腔室。所述工艺腔室可为多腔室设备的一个腔室或其可仅为单一腔室设备。所述腔室还可包含多个站,其中在所述站中同时处理不同晶片。所述工艺腔室可为其中发生植入、蚀刻或其它抗蚀剂介入工艺的相同腔室。在其它实施例中,单独腔室专供剥除之用。工艺腔室压力可从大约600毫托到2托变化。在某些实施例中,所述压力从大约0.9托到1.5托变化。
所述工艺腔室包含其上执行剥除操作的一个或一个以上的处理站。在某些实施例中,所述一个或一个以上的处理站包含预热站、至少一个剥除站及一个除灰站(overashstation)。晶片支撑件经配置以在处理期间支撑所述晶片。所述晶片支撑件还可在处理期间将热量传送到所述晶片并将热量从所述晶片传送出以视需要调整晶片温度。在某些实施例中,所述晶片是支撑于多个最小接触件上,且并未物理地接触晶片支撑件表面平面。心轴拾取所述晶片并将所述晶片从一站传送到另一站。
图4是展示适合用于在晶片上实践本发明的下游等离子体设备400的方面的示意说明。此设备可用于钝化及剥除操作两者。设备400具有由喷洒头组合件417分隔的等离子体产生部分411及暴露腔室401。在暴露腔室401内部,晶片403倚靠在压板(或平台)405上。压板405装配有加热/冷却元件。在一些实施例中,压板405还经配置以用于对晶片403施加偏压。在暴露腔室401中经由真空泵通孔导管407达到低压。气态氢气源(具有或不具有稀释/载流气体)及二氧化碳(或其它弱氧化剂)经由入口409将气体流提供到所述设备的等离子体产生部分411中。等离子体产生部分411部分由感应线圈413围绕,感应线圈413又连接到电源415。在操作期间,将气体混合物引入等离子体产生部分411中,激励感应线圈413,并在等离子体产生部分411中产生等离子体。喷洒头组合件417可具有所施加电压或经接地引导物质流进入暴露腔室401中。如所提及,晶片403可经受温度控制且/或可被施加RF偏压。可使用各种配置及几何形状的等离子体源411及感应线圈413。举例来说,感应线圈413可以交错的方式环绕等离子体源411。在另一实例中,等离子体源411可成形为圆顶而非圆柱。控制器450可连接到所述工艺腔室的组件,且控制工艺气体组合物、所述剥除操作的压力、温度及晶片转位。机器可读媒体可耦合到所述控制器并含有用于控制这些操作的工艺条件的指令。
合适的等离子体腔室及系统包含美国加州圣荷西市(San Jose)诺发系统(NovellusSystems)公司提供的Gamma 2100,2130I2CP(交叉电感耦合等离子体)、G400及GxT。其它系统包含来自美国马里兰州洛克维尔市(Rockville)亚舍利科技(Axcelis Technologies)的熔合线(Fusion line);来自韩国PSK科技公司的TERA21;及来自美国加州费利蒙市(Fremont)马特森科技(Mattson Technology)公司的Aspen。此外,各种剥除腔室可经配置于群集工具上。举例来说,剥除腔室可添加到可购自美国加州圣克拉拉市(Santa Clara)应用材料(Applied Materials)公司的森特拉(Centura)群集工具。
工件
在优选实施例中,依照本发明的方法及设备使用的工件是半导体晶片。可使用任意大小的晶片。大部分现代晶片制造设施使用200毫米或300毫米晶片。如上所揭示,本文中所揭示的工艺及设备在处理操作(例如蚀刻、离子植入或沉积)之后剥除光致抗蚀剂。本发明适合用于具有极小特征或临界尺寸(例如,100纳米以下,65纳米处或45纳米处或小于45纳米)的晶片。所揭示的HDIS的低硅损失特征尤其适合用于先进逻辑装置的极浅结。本发明还尤其适合用于经历路线前端(FEOL)离子植入(尤其是高剂量离子植入)的晶片。
等离子体活化物质与晶片上的光致抗蚀剂及溅镀残留物发生反应。在所述晶片处,反应性气体可包含许多的等离子体活化物质、基团、带电物质及气体副产物。对于基于氢气的等离子体,各种氢气物质的容积浓度可为大约20%到80%的晶片处的气体,通常大于50%。对于基于氧气的等离子体,各种氧气物质的容积浓度可为大约20%到80%的晶片处的气体,通常大于50%。各种氟物质的容积浓度可为0.01%到大约2%或小于1%。来自弱氧化剂的各种物质的容积浓度可为0.05%到大约5%或大约1.2%。这些物质可包含H2*、H2+、H+、H*、e-、OH、O*、CO、CO2、H2O、HF、F*、F-、CF、CF2及CF3。
工艺条件可根据晶片大小变化。在本发明的一些实施例中,期望使工件在对其表面施加等离子体期间保持在特定温度。晶片温度可在大约110℃与大约500℃之间变化。为减小上述光致抗蚀剂爆裂的可能性,晶片温度优选地缓慢增加直到移除足够的外壳且光致抗蚀剂爆裂不再是关注点。初始站温度可为大约110℃到大约260℃,例如大约240℃。随后站可成功使用较高温度(例如285℃及大约350℃)及良好的剥除速率。在某些实施例中,在NF3掺料期间降低温度以减小与这些掺料关联的Si损失。
实例性工艺
如上所指示,在某些实施例中,多站剥除设备用以执行本文中所描述的光致抗蚀剂及残留物剥除工艺。图5是展示包含站1、站2、站3、站4、站5及站6的此设备的俯视图的简单示意图。晶片经由腔室501进入所述设备站1处,依序将晶片传送到每一站用于所述站处的处理操作,且晶片在完成所述工艺之后经由腔室502从站6退出。所述架构允许在钝化工艺之后暂停或冷却所述晶片以通过HDIS剥除化学方法保护硅不受侵蚀。
实例性工艺1
实例性工艺2
在另一实例性工艺中,6个站上的第一次通过经执行以提供成形气体钝化,接着是第二次通过中的站1中的预热及站2到6中的剥除操作。等待操作可在腔室外在非氧化环境中发生。
可在包含用于半导体制造的光刻及/或图案化硬件的系统中实施所揭示的方法及设备。此外,可在所揭示的方法之前或之后在利用光刻及/或图案化工艺的工艺中实施所揭示的方法。
实验
进行各种实验来比较站1中的成形气体钝化先于站2到6中的含F剥除操作的情况下Si损失与并未执行钝化工艺的情况下的Si损失。硅损失减小54%到82%。
虽然已依据少数优选实施例描述了本发明,但是其不应限于上文呈现的具体细节。可使用上述优选实施例的许多变化。因此,应参考所附权利要求书来广义上解释本发明。
Claims (17)
1.一种在反应腔室中从工件表面移除材料的方法,所述方法包括:
使所述工件暴露于从成形气体产生的等离子体;
在使所述工件暴露于所述成形气体等离子体之后,允许晶片安置于非等离子体环境中持续至少30秒的时间周期;
及在允许所述晶片安置之后,使所述晶片暴露于基于氧气或基于氢气的等离子体以移除所述材料。
2.根据权利要求1所述的方法,其中允许所述工件安置至少100秒。
3.根据权利要求1所述的方法,其中允许所述工件安置至少150秒。
4.根据权利要求1所述的方法,其中允许所述工件安置至少200秒。
5.根据权利要求1所述的方法,其中允许所述工件安置至少220秒。
6.根据权利要求1到5中任一权利要求所述的方法,其中所述基于氧气或基于氢气的等离子体包括氟物质。
7.根据权利要求1到6中任一权利要求所述的方法,其中从所述工件表面移除的所述材料包括高剂量植入的抗蚀剂。
8.根据权利要求1到7中任一权利要求所述的方法,其中远程产生所述成形气体等离子体。
9.根据权利要求1到8中任一权利要求所述的方法,其中在所述工件暴露于所述成形气体等离子体之后在所述工件的所暴露硅部分上形成保护膜。
10.根据权利要求9所述的方法,其中所述保护膜是SixNy膜。
11.根据权利要求1所述的方法,其中在光刻操作之后执行暴露所述工件。
12.一种用于从工件表面移除材料的设备,其包括:
反应腔室,其包括:
等离子体源,
喷洒头,其定位于所述等离子体源的下游,及
所述喷洒头的下游的工件支撑件,所述工件支撑件包括基座及控制支撑于所述工件支撑件上的工件的温度的温度控制机构;及
控制器,其用于执行指令集,所述指令集包括如下指令:使所述工件暴露于从成形气体产生的等离子体;在使所述工件暴露于所述成形气体等离子体之后允许所述工件安置于非等离子体环境中持续至少30秒的时间周期;及在允许所述工件安置之后使所述晶片暴露于基于氧气或基于氢气的等离子体以移除所述材料。
13.根据权利要求12所述的设备,其中所述控制器指令包括允许所述工件安置至少100秒的指令。
14.根据权利要求12所述的设备,其中所述控制器指令包括允许所述工件安置至少100秒的指令。
15.根据权利要求12所述的设备,其中所述控制器指令包括允许所述工件安置至少150秒的指令。
16.根据权利要求12所述的设备,其中所述控制器指令包括允许所述工件安置至少200秒的指令。
17.根据权利要求12所述的设备,其中所述控制器指令包括允许所述工件安置至少220秒的指令。
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CN102652351B (zh) | 2016-10-05 |
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WO2011072061A3 (en) | 2011-09-22 |
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JP5770740B2 (ja) | 2015-08-26 |
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