CN102591161B - 光致抗蚀剂组合物及多层抗蚀剂体系的多次曝光方法 - Google Patents
光致抗蚀剂组合物及多层抗蚀剂体系的多次曝光方法 Download PDFInfo
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- CN102591161B CN102591161B CN201210043396.9A CN201210043396A CN102591161B CN 102591161 B CN102591161 B CN 102591161B CN 201210043396 A CN201210043396 A CN 201210043396A CN 102591161 B CN102591161 B CN 102591161B
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- Prior art keywords
- film
- ester
- approximately
- patterned layer
- repetitive
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/955,451 US7838198B2 (en) | 2007-12-13 | 2007-12-13 | Photoresist compositions and method for multiple exposures with multiple layer resist systems |
US11/955,451 | 2007-12-13 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801190576A Division CN101884013B (zh) | 2007-12-13 | 2008-12-05 | 光致抗蚀剂组合物及多层抗蚀剂体系的多次曝光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102591161A CN102591161A (zh) | 2012-07-18 |
CN102591161B true CN102591161B (zh) | 2014-06-11 |
Family
ID=40427142
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210043396.9A Expired - Fee Related CN102591161B (zh) | 2007-12-13 | 2008-12-05 | 光致抗蚀剂组合物及多层抗蚀剂体系的多次曝光方法 |
CN2008801190576A Expired - Fee Related CN101884013B (zh) | 2007-12-13 | 2008-12-05 | 光致抗蚀剂组合物及多层抗蚀剂体系的多次曝光方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801190576A Expired - Fee Related CN101884013B (zh) | 2007-12-13 | 2008-12-05 | 光致抗蚀剂组合物及多层抗蚀剂体系的多次曝光方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7838198B2 (zh) |
JP (1) | JP5490013B2 (zh) |
KR (1) | KR20100092470A (zh) |
CN (2) | CN102591161B (zh) |
TW (1) | TWI416255B (zh) |
WO (1) | WO2009074522A1 (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5035562B2 (ja) * | 2007-08-22 | 2012-09-26 | 信越化学工業株式会社 | パターン形成方法 |
US8236476B2 (en) | 2008-01-08 | 2012-08-07 | International Business Machines Corporation | Multiple exposure photolithography methods and photoresist compositions |
JP5175579B2 (ja) * | 2008-02-25 | 2013-04-03 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP5573356B2 (ja) * | 2009-05-26 | 2014-08-20 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
TWI420571B (zh) * | 2009-06-26 | 2013-12-21 | 羅門哈斯電子材料有限公司 | 形成電子裝置的方法 |
JP5184460B2 (ja) * | 2009-07-24 | 2013-04-17 | 信越化学工業株式会社 | パターン形成方法 |
JP5516195B2 (ja) * | 2009-08-04 | 2014-06-11 | 信越化学工業株式会社 | パターン形成方法及びレジスト材料 |
JP5244740B2 (ja) * | 2009-08-26 | 2013-07-24 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法 |
JP5624742B2 (ja) * | 2009-10-02 | 2014-11-12 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法 |
JP5753351B2 (ja) * | 2009-11-19 | 2015-07-22 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 電子デバイスを形成する方法 |
JP5542500B2 (ja) * | 2010-03-30 | 2014-07-09 | 東京応化工業株式会社 | レジストパターン形成方法およびレジスト組成物 |
JP5621735B2 (ja) * | 2010-09-03 | 2014-11-12 | 信越化学工業株式会社 | パターン形成方法及び化学増幅ポジ型レジスト材料 |
US8394573B2 (en) | 2010-09-16 | 2013-03-12 | International Business Machines Corporation | Photoresist compositions and methods for shrinking a photoresist critical dimension |
KR20130114095A (ko) * | 2010-09-17 | 2013-10-16 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 중합체 및 레지스트 패턴 형성 방법 |
US20120122031A1 (en) * | 2010-11-15 | 2012-05-17 | International Business Machines Corporation | Photoresist composition for negative development and pattern forming method using thereof |
CN102566285B (zh) * | 2010-12-09 | 2014-05-28 | 远东新世纪股份有限公司 | 制造微结构的方法及该微结构 |
EP2492749A1 (en) * | 2011-02-28 | 2012-08-29 | Rohm and Haas Electronic Materials LLC | Photoresist compositions and methods of forming photolithographic patterns |
EP2492750A1 (en) * | 2011-02-28 | 2012-08-29 | Rohm and Haas Electronic Materials LLC | Photoresist compositions and methods of forming photolithographic patterns |
JP5898985B2 (ja) | 2011-05-11 | 2016-04-06 | 東京応化工業株式会社 | レジストパターン形成方法 |
KR101913865B1 (ko) | 2011-09-22 | 2018-10-31 | 도오꾜오까고오교 가부시끼가이샤 | 레지스트 조성물 및 레지스트 패턴 형성 방법 |
KR101936435B1 (ko) | 2011-09-22 | 2019-01-08 | 도오꾜오까고오교 가부시끼가이샤 | 레지스트 조성물, 레지스트 패턴 형성 방법 |
KR20130039124A (ko) * | 2011-10-11 | 2013-04-19 | 삼성전자주식회사 | 반도체 소자의 패턴 형성방법 |
JP5898962B2 (ja) * | 2012-01-11 | 2016-04-06 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP6075369B2 (ja) * | 2012-03-14 | 2017-02-08 | Jsr株式会社 | フォトレジスト組成物、レジストパターン形成方法及び酸拡散制御剤 |
JP5593357B2 (ja) * | 2012-09-18 | 2014-09-24 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP6132554B2 (ja) * | 2013-01-08 | 2017-05-24 | アイバイツ株式会社 | 光塩基発生剤組成物 |
WO2016043203A1 (ja) * | 2014-09-17 | 2016-03-24 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置、有機エレクトロルミネッセンス表示装置およびタッチパネル |
TWI666257B (zh) * | 2014-12-30 | 2019-07-21 | Sumitomo Bakelite Co., Ltd. | 含有熱鹼產生劑之光可成像組成物 |
TWI636326B (zh) * | 2015-05-15 | 2018-09-21 | 南韓商羅門哈斯電子材料韓國公司 | 光鹼產生劑及包括其的光致抗蝕劑組成物 |
WO2019240891A1 (en) * | 2018-06-15 | 2019-12-19 | Mattson Technology, Inc. | Methods and apparatus for post exposure bake processing of a workpiece |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0926555A1 (en) * | 1997-12-24 | 1999-06-30 | Agfa-Gevaert N.V. | Photoactive materials applicable to imaging systems. |
JP2005017354A (ja) * | 2003-06-23 | 2005-01-20 | Fuji Photo Film Co Ltd | ホログラム記録材料用組成物、ホログラム記録材料及びホログラム記録方法。 |
US6969577B2 (en) * | 2003-03-04 | 2005-11-29 | Fuji Photo Film Co., Ltd. | Positive resist composition |
US6991893B2 (en) * | 2002-10-31 | 2006-01-31 | Intel Corporation | Controlling resist profiles through substrate modification |
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US5650261A (en) | 1989-10-27 | 1997-07-22 | Rohm And Haas Company | Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system |
US5206117A (en) | 1991-08-14 | 1993-04-27 | Labadie Jeffrey W | Photosensitive polyamic alkyl ester composition and process for its use |
US5576143A (en) | 1991-12-03 | 1996-11-19 | Fuji Photo Film Co., Ltd. | Light-sensitive composition |
US5932391A (en) | 1995-08-18 | 1999-08-03 | Kabushiki Kaisha Toshiba | Resist for alkali development |
JPH1010741A (ja) | 1996-06-27 | 1998-01-16 | Dow Corning Asia Kk | 紫外線硬化性ポリシロキサン組成物およびこれを用いた硬化物パターンの製造方法 |
US6177360B1 (en) | 1997-11-06 | 2001-01-23 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
JPH11269138A (ja) * | 1998-03-20 | 1999-10-05 | Mitsubishi Paper Mills Ltd | 有機塩基発生剤 |
US6303266B1 (en) | 1998-09-24 | 2001-10-16 | Kabushiki Kaisha Toshiba | Resin useful for resist, resist composition and pattern forming process using the same |
DE10120675B4 (de) | 2001-04-27 | 2005-07-21 | Infineon Technologies Ag | Verfahren zur Strukturierung einer Photolackschicht |
JP4265286B2 (ja) * | 2002-06-03 | 2009-05-20 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP4154953B2 (ja) * | 2002-08-09 | 2008-09-24 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、それを用いたパターンの製造方法および電子部品 |
JP4612999B2 (ja) | 2003-10-08 | 2011-01-12 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
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KR100639680B1 (ko) * | 2005-01-17 | 2006-10-31 | 삼성전자주식회사 | 반도체 소자의 미세 패턴 형성방법 |
JP4877388B2 (ja) * | 2007-03-28 | 2012-02-15 | Jsr株式会社 | ポジ型感放射線性組成物およびそれを用いたレジストパターン形成方法 |
JP2008286924A (ja) * | 2007-05-16 | 2008-11-27 | Panasonic Corp | 化学増幅型レジスト材料、トップコート膜形成用材料及びそれらを用いたパターン形成方法 |
US7803521B2 (en) * | 2007-11-19 | 2010-09-28 | International Business Machines Corporation | Photoresist compositions and process for multiple exposures with multiple layer photoresist systems |
-
2007
- 2007-12-13 US US11/955,451 patent/US7838198B2/en not_active Expired - Fee Related
-
2008
- 2008-10-28 TW TW097141306A patent/TWI416255B/zh not_active IP Right Cessation
- 2008-12-05 JP JP2010537397A patent/JP5490013B2/ja not_active Expired - Fee Related
- 2008-12-05 WO PCT/EP2008/066915 patent/WO2009074522A1/en active Application Filing
- 2008-12-05 CN CN201210043396.9A patent/CN102591161B/zh not_active Expired - Fee Related
- 2008-12-05 KR KR1020107011940A patent/KR20100092470A/ko not_active Application Discontinuation
- 2008-12-05 CN CN2008801190576A patent/CN101884013B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0926555A1 (en) * | 1997-12-24 | 1999-06-30 | Agfa-Gevaert N.V. | Photoactive materials applicable to imaging systems. |
US6991893B2 (en) * | 2002-10-31 | 2006-01-31 | Intel Corporation | Controlling resist profiles through substrate modification |
US6969577B2 (en) * | 2003-03-04 | 2005-11-29 | Fuji Photo Film Co., Ltd. | Positive resist composition |
JP2005017354A (ja) * | 2003-06-23 | 2005-01-20 | Fuji Photo Film Co Ltd | ホログラム記録材料用組成物、ホログラム記録材料及びホログラム記録方法。 |
Also Published As
Publication number | Publication date |
---|---|
JP2011508246A (ja) | 2011-03-10 |
CN101884013A (zh) | 2010-11-10 |
TW200938952A (en) | 2009-09-16 |
CN101884013B (zh) | 2013-04-10 |
US7838198B2 (en) | 2010-11-23 |
KR20100092470A (ko) | 2010-08-20 |
TWI416255B (zh) | 2013-11-21 |
WO2009074522A1 (en) | 2009-06-18 |
US20090155718A1 (en) | 2009-06-18 |
JP5490013B2 (ja) | 2014-05-14 |
CN102591161A (zh) | 2012-07-18 |
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