CN102473844A - 基于单层或多层石墨烯的光探测器件 - Google Patents

基于单层或多层石墨烯的光探测器件 Download PDF

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CN102473844A
CN102473844A CN2010800359781A CN201080035978A CN102473844A CN 102473844 A CN102473844 A CN 102473844A CN 2010800359781 A CN2010800359781 A CN 2010800359781A CN 201080035978 A CN201080035978 A CN 201080035978A CN 102473844 A CN102473844 A CN 102473844A
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夏丰年
P·阿沃利斯
T·米勒
林佑民
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Abstract

公开了一种使用栅极氧化物层(12)上的单层或多层石墨烯作为光子探测层(14)的光探测器。公开了具有源极(8)、漏极(6)和栅极(10)电极的不同配置的多个实施方式。另外，公开了包含多个光探测元件的光探测器阵列，用于诸如成像和监控等应用。在石墨烯层(14)之下的光波导可嵌入衬底(10)或栅极氧化物层(12)内，以将光子引导至石墨烯层(14)。

Description

基于单层或多层石墨烯的光探测器件
技术领域
本发明涉及使用单层或多层石墨烯作为光探测器中的光子探测层。
背景技术
光探测器被用于探测或感测光或其他电磁能量。目前可用的光探测器一般被用于多种实际应用，诸如有线或无线通信、感测、监控、科学仪器、国家安全等等。
许多光学光探测器使用半导体材料作为光检测材料系统。然而半导体材料具有带隙，因此只能探测到具有大于带隙的能量的光子，从而潜在地留下未探测的光子。此外，基于半导体的光探测器的固有带宽受到光探测区内载流子渡越(transit)时间的限制。这两种限制都造成达不到最优的光探测器。
发明内容
本发明的各个方面在所附权利要求中进行限定，现在应当参考所附权利要求。
本发明提供一种其中单层或多层石墨烯作为光传导层的光探测器件。
根据本发明的一个方面，提供其上沉积栅极氧化物层的衬底，然后将石墨烯的沟道层沉积在栅极氧化物层上，并且在石墨烯层上构图形成源极接触区和漏极接触区。
根据本发明的另一方面，在源极和漏极区的顶部提供分离的栅极。并且，可以提供多个源极和漏极区。
根据本发明的另一方面，可以与传统信号处理读出电路一同提供多个光探测元件，来建立光探测阵列。
附图说明
图1示出了基于石墨烯的光探测器的简单FET实施方式。
图2为示出跨基于石墨烯的光探测器的沟道所产生的内部电势的图形。
图3示出了基于石墨烯的光探测器的分离栅极型FET实施方式。
图4为示出跨分离栅极的基于石墨烯的光探测器的沟道所产生的内部电势的图形
图5示出了具有集成的波导结构的基于石墨烯的光探测器的分离栅极型的基于石墨烯的FET实施方式。
图6示出了具有用于增强有效光探测面积的金属叉指(interdigitated fingers)的基于石墨烯的光探测器。
图7示出了基于石墨烯的光探测器阵列的俯视图。
具体实施方式
此处的实施例及其各种特征和有利细节将参考附图中图示以及以下描述中详述的非限制性实施例而进行更完整的解释。省略众所周知的部件和处理技术的描述，以免不必要地使此处的实施例难以理解。在制作此处所述结构时，可运用半导体工艺中众所周知的传统工艺。此处使用的示例仅仅是为了帮助理解此处的实施例可以被实施的方式，以及进一步使得本领域技术人员能够实施此处的实施例。因而，不应将此处的示例理解为限制此处的实施例的范围。
本发明的实施例使用单层或多层石墨烯作为光探测器中的光探测层。因为石墨烯具有作为零或非常小带隙的材料的独特特性，所以可吸收任意波长(或任意能级)的光子。因此，石墨烯可用作波长范围至少从紫外到远红外的宽范围的光应用的通用材料。高电场下石墨烯内载流子输运速度可以接近费米(Fermi)速度106米/秒，这比传统半导体内的载流子输运速度大10至100倍。这可以导致光探测器具有高得多的带宽。采用本发明的器件可以在光电流产生路径之间无直接外部偏压的情况下工作，这自然导致零暗电流，并且可以使得能够进行其中低暗电流非常关键的成像、遥感和监控中的许多应用。采用本发明的器件在光电流产生路径之间有直接外部偏压的情况下也可工作，这通常导致较高效率，但具有一些暗电流。
参见图1，依照本发明所制造的光探测器的第一实施例具有类似于传统场效应晶体管(FET)的基本设计，其中通过施加栅极偏压以建立石墨烯p-n结以便将探测效率最大化，来实现光探测。背栅极10由硅背栅极(重掺杂或轻掺杂)组成。在背栅极10的顶部上，沉积栅极氧化物层12作为绝缘层。栅极氧化物层12可以是SiO2或任何介电材料。在栅极氧化物顶部上提供可以是一层或多层厚的石墨烯层14。石墨烯层14可以是掺杂的或未掺杂的。石墨烯层可以通过包括机械剥离、化学沉积或生长的若干工艺来创建。接着，在石墨烯/栅极氧化物层12上构图形成漏极6接触和源极8接触，然后石墨烯形成在漏极6接触和源极8接触之间的沟道。石墨烯与源极接触和漏极接触应重叠至少100nm，以建立良好的金属-石墨烯结。
施加栅极偏压VG以场掺杂沟道层14中间的石墨烯。接近源极和漏极并且在源极和漏极底下的石墨烯的掺杂由接触而非背栅极主导。在适当选择栅极偏压VG的情况下，因为在源极(或漏极)-石墨烯界面处形成石墨烯p-n结，所以可获得良好的探测效率。
图2示出了跨图1的沟道层14的宽度d所产生的内部电势。容易看出，最大光探测的区域紧靠源极8区和漏极6区，在该处形成石墨烯p-n结并且在此区域内电场被最大化，导致光产生载流子的有效分离。
参见图3，根据本发明制作的另一实施方式使用分离栅极型结构，从而可以建立高电场光探测区。在衬底34和栅极氧化物层12的顶部，源极区30和漏极区32分别沉积于单层或多层(2至5层)的石墨烯层38上。透明栅极介电层(可以是高K或低K)40沉积在石墨烯38、源极30区和漏极32区的顶部。然后栅极42和44构图形成在介电层40的顶部。为解释目的，在图3中栅极介电层40被示出为部分地被切除。除了需要电连接的位置之外，该层可覆盖源极区和漏极区以及石墨烯沟道的整体。
在操作中，分别将栅极偏压施加至栅极42和44，以创建其中产生显著电场的沟道38内的灵敏的光探测区。栅极偏压的幅值是顶部栅极电介质40的厚度的函数。图4图形化地示出了图3内的器件的源极30区和漏极32区之间由顶部栅极42和44产生的电势。
图5示出了如图3中所见、但添加了在石墨烯下的光波导50的分离栅极型光探测器件。该器件的操作方式与图3的光探测器件一样，但因为波导50的捕获在更大面积上入射器件的光子并将它们引导至石墨烯层38的特性，所以更高效。波导50可使用诸如材料生长、晶片键合、湿法或干法蚀刻等典型半导体工艺，从硅、氮化硅、氮氧化硅或任何低损耗材料来制造。
图6示出了可以对于前述实施例进行的修改。在石墨烯层38的顶部构图形成定义多个源极区(64-67)和漏极区(60-63)的叉指。因为可以大大增强有效光探测面积，所以该实施方式提供了非常灵敏的光探测器。可以使用具有不同功函数的不同的源极金属和漏极金属，以便在零源极-漏极偏压下产生用于光载流子分离的内部电势。施加源极-漏极偏压可进一步增强光检测效率。然而在此情况下，暗电流将被引入到操作中。而且，如果对于源极接触和漏极接触使用相同金属，则可使用荫罩(shadow mask)以阻挡源极/石墨烯接触或漏极/石墨烯接触内的光吸收，以增强光电流产生。
光探测器阵列在诸如成像(在至少从远红外至可见的非常广的波长范围内)和监控之类的应用中非常有用。本发明的基于石墨烯的光探测器也可使用标准半导体工艺制作成如图7所示的这样的阵列70。添加传统的信号处理电路72可提供从探测器阵列内所有光探测元件74的读出，其中每个元件74可包含根据任何前述实施例的光探测器。
本领域技术人员应理解，尽管与前面示例实施方式相关而描述了本发明，但是本发明并不限于此，并且存在落入本发明的范围之内的许多可能的变化和修改。
本发明的范围包括任何在此公开的新颖特征或特征组合。申请人特此声明，在本申请或任何从本申请衍生的进一步的申请的申请过程期间，可以对于这样的特征或特征组合制定新权利要求。特别的，参照所附权利要求，来自从属权利要求的特征可与独立权利要求的特征组合，并且来自各独立权利要求的特征可以以任何适当的方式且不仅仅是权利要求中列举的特定组合方式来组合。
为了避免不确定，此处贯穿说明书和权利要求所使用的术语“包括”不应理解为意为“只包括”。

Claims (15)

1.一种光探测器件，包括：
a.衬底(10，34)；
b.栅极氧化物层(12)，沉积于所述衬底上；
c.石墨烯的沟道层(14，38)，沉积于所述栅极氧化物层上；以及
d.源极接触区和漏极接触区(6，8，30，32，60-67)，设置在所述石墨烯层上。
2.根据权利要求1所述的光探测器件，其中光探测层为单层石墨烯。
3.根据权利要求1所述的光探测器件，其中光探测层为不超过10层的石墨烯。
4.根据权利要求1、2或3所述的光探测器件，其中提供多个源极(60-63)区和漏极(64-67)区。
5.根据权利要求4所述的光探测器件，其中，所述多个源极区和漏极区包括金属叉指(60-67)。
6.根据权利要求5所述的光探测器件，其中，所述源极和漏极叉指(60-67)由具有不同功函数的不同金属制成。
7.根据前述权利要求中的任一项所述的光探测器件，进一步包括栅极偏压VG被施加于其上的背栅极(10)。
8.根据前述权利要求中的任一项所述的光探测器件，进一步包括，
栅极介电层(40)，沉积于所述石墨烯层(14，38)上；以及
分离栅极(42，44)，沉积于所述栅极介电层的顶部，用于跨所述石墨烯层施加电场。
9.根据前述权利要求中的任一项所述的光探测器件，进一步包括：
光波导，形成所述衬底的一部分。
10.根据权利要求1-8所述的光探测器件，进一步包括：
光波导，嵌入所述栅极氧化物层中且在所述石墨烯之下。
11.根据权利要求9或10所述的光探测器件，其中所述光波导为低损耗材料。
12.根据权利要求9、10或11所述的光探测器件，其中所述光波导选自于由硅、氮化硅以及氮氧化物组成的组。
13.一种光探测器阵列，包括多个根据前述权利要求中的任一项所述的光探测器件。
14.一种制作光探测器件的方法，包括：
a.提供衬底(10，34)；
b.将栅极氧化物层(12)沉积于所述衬底上；
c.将石墨烯的沟道层(14，38)沉积于所述栅极氧化物层上；以及
d.在所述石墨烯层上构图形成源极接触区和漏极接触区(6，8，30，32，60-67)。
15.根据权利要求14所述的方法，其中，沉积单层石墨烯作为所述沟道层。
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