CN115004386A - 表面等离子体光子学电场增强型光电探测器及图像传感器 - Google Patents
表面等离子体光子学电场增强型光电探测器及图像传感器 Download PDFInfo
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Abstract
本发明涉及一种表面等离子体光子学电场增强型光电探测器,根据一实施例的光电探测器可以吸收表面等离子体激元(Surface plasmon polariton,SPP)而生成光电流,该表面等离子体激元(Surface plasmon polariton,SPP)是表面等离子体(Surface plasmon,SP)与光波(Light wave)的光子(Photon)结合而生成。
Description
相关申请的交叉引用
本申请对于整篇内容作为参考分别包括在本发明的以下申请要求优先权,分别为:申请日期为2020年1月14日、申请号为62/961,029的美国临时专利申请以及申请日期为2020年7月2日、申请号为16/919,831的美国专利申请。
技术领域
本发明涉及一种表面等离子体光子学电场增强型光电探测器,更具体地,涉及一种应用以下现象的技术:通过光与金属表面的自由电子相互作用(Coupling)引起的表面等离子体激元(Surface plasmon polariton,SPP),与电介质之间的分界面上产生强力增强型电场(Enhanced electric field),表面等离子体激元(Surface plasmon polariton,SPP)是作为自由电子集体振荡的表面等离子体(Surface plasmon,SP)与光波(Lightwave)结合的形态。
背景技术
光电探测器与通常金属氧化物半导体场效应晶体管(MOSFET)结构类似,采用标准CMOS工艺制作而成,以使其在源极和漏极之间流过电流。
但,将光的入射聚集到栅极时,与光吸收层所在的栅极内多晶硅掺杂的离子、氧化膜与硅基板之间的界面、硅基板等中,光激发活动将活跃起来。并且,此时吸收能量的电荷在形成于氧化膜与硅基板之间的沟道区或者施加有驱动电压的漏极电极等,隧穿氧化膜,使其电荷进入栅极。这种隧穿会在栅极与氧化膜之间形成电荷耗尽层,使整个栅极的电荷量发生变化。
并且,随着隧穿的实施,电荷量和栅极电场会发生变化,这立刻会产生沟道阈值电压的减低效果。实施隧穿之后,最终由于入射到栅极的光,在晶体管的沟道上,会诱导光电流。并且,栅极用于接受光,其形成为与外部电极连接的结构,以便于针对源自光的沟道的光电流及暗电流大小、灵敏度、动态范围等实施:输出信号特性调节、像素复位功能等。
通常光电探测器形成为:使栅极吸收光,引起光电转换的结构。
这种传统的光电探测器具有以下弊端:栅极尺寸小于入射光的波长范围时,由于入射光直接被吸收,无法引起光激发,针对应用探测器尺寸及其结构的图像传感器降低像素大小时,会具有局限性。
另外,还需要进一步提升:被入射的光直接激发的电荷引起光电转换的内量子效率。
发明内容
本发明的目的在于:使金属层(Metal Layers)与入射光相互作用,通过介电常数不同的接合面产生的表面等离子体(Surface Plasmon,SP)和表面等离子体激元(SurfacePlasmon Polariton,SPP)实现光电转换,使表面等离子体激元直接增强光电流。
本发明的目的在于:根据入射光和金属层的相互作用生成的表面等离子体激元和局部电场(Localized Electric Field)效应,使被激发的电荷以绝缘膜为介质隧穿到另外的空间,使空间的电荷量和耗尽层的大小发生变化,然后,对于相邻的电流沟道的阈值电压产生影响,使光感应能力达到最强。
关于附加的状态,可以通过下述详细说明局部地提示或描述,也可以通过以上提示的发明实施例做出明确的解释。
一实施例中,光电探测器可以吸收表面等离子体激元(Surface plasmonpolariton,SPP)生成光电流,该表面等离子体激元(Surface plasmon polariton,SPP)是表面等离子体(Surface plasmon,SP)与光波(Light wave)的光子(Photon)结合而生成。
一实施例中,光电探测器可以通过所述被吸收的表面等离子体激元引起的隧穿诱导光电流,生成所述光电流。
一实施例中,光电探测器可以包括:金属层,其遮蔽入射光,与表面等离子体相互作用来产生表面等离子体激元,在所述被遮蔽的入射光的光子与电介质的接合面生成该表面等离子体;光吸收层,其吸收所述产生的表面等离子体激元,通过所述被吸收的表面等离子体激元和局部电场(Localized Electric Field)效应,使被激发的电荷以绝缘膜为介质进行隧穿;以及半导体层,其基于所述被隧穿的电子的电场(Electric field)效应,诱导光电流。
一实施例中,所述金属层包括至少一部分开放的纳米孔,所述产生的表面等离子体激元可以通过所述纳米孔被吸收到所述光吸收层。
一实施例中,所述纳米孔形成有介电常数高于空气的物质。
一实施例中,所述纳米孔可以由包含Si3N4的物质形成。
一实施例中,所述金属层可以包含铝(Al)、金(Au)和银(Ag)中至少一个。
一实施例中,所述金属层从表面延伸至所述光吸收层,可以将所述产生的表面等离子体激元引导至所述光吸收层。
一实施例中,图像传感器包括金属表面、形成于所述金属表面的金属纳米孔阵列以及与所述金属纳米孔阵列对应的位置形成的探测器阵列,所述探测器阵列可以吸收表面等离子体激元(Surface plasmon polariton,SPP),生成光电流,该表面等离子体激元(Surface plasmon polariton,SPP)是形成于所述金属表面的表面等离子体(Surfaceplasmon,SP)与光波(Light wave)的光子(Photon)结合而生成。
一实施例中,所述探测器阵列可以通过隧穿诱导光电流而生成所述光电流,该隧穿由所述被吸收的表面等离子体激元引起。
一实施例中,所述金属表面遮蔽入射光,与表面等离子体相互作用来产生表面等离子体激元,在所述被遮蔽的入射光的光子与电介质的接合面生成该表面等离子体,
所述探测器阵列包括:
光吸收层,其吸收所述产生的表面等离子体激元,使通过所述被吸收的的表面等离子体激元和局部电场(Localized Electric Field)效应激发的电荷以绝缘膜为介质进行隧穿;以及
半导体层,其基于所述被隧穿的电子的电场(Electric field)效应,诱导光电流。
一实施例中,所述金属表面从表面延伸至所述光吸收层,可以将所述产生的表面等离子体激元引导至所述光吸收层。
一实施例中,光电探测器的工作方法包括:吸收表面等离子体激元(Surfaceplasmon polariton,SPP),该表面等离子体激元(Surface plasmon polariton,SPP)是表面等离子体(Surface plasmon,SP)与光波(Light wave)的光子(Photon)结合而生成的步骤;以及利用所述被吸收的表面等离子体激元生成光电流的步骤。
一实施例中,生成所述光电流的步骤可以包括:通过所述被吸收的表面等离子体激元引起的隧穿诱导光电流而生成光电流的步骤。
一实施例中,图像传感器的工作方法可以包括:利用形成于金属表面的金属纳米孔阵列以及与所述金属纳米孔阵列对应的位置形成的探测器阵列生成光电流的步骤,生成所述光电流的步骤可以包括:所述探测器阵列吸收表面等离子体激元(Surface plasmonpolariton,SPP),该表面等离子体激元(Surface plasmon polariton,SPP)是形成于所述金属表面的表面等离子体(Surface plasmon,SP)与光波(Light wave)的光子(Photon)结合而生成的步骤;以及利用所述被吸收的表面等离子体激元生成光电流的步骤。
一实施例中,生成所述光电流的步骤可以包括:通过所述被吸收的表面等离子体激元引起的隧穿诱导光电流而生成所述光电流的步骤。
附图说明
添加到所述的示意状态、实施例及特征,并参考以下详细说明及相关附图,明确地解释附加的状态、实施例及特征。
图1示出了根据本发明一实施例中光电探测器的结构。
图2示出了根据本发明一实施例的图像传感器。
图3示出了能带图的光电流生成机制。
图4示出了光电流沟道直接生成表面等离子体激元的实施例。
图5示出了将基于金属组成的表面等离子体激元直接传播至光吸收层的实施例。
图6示出了根据本发明的光谱敏感度(IPCE,Incident photon to currentefficiency)。
具体实施方式
本说明书记载了基于本发明概念的实施例,其中,特定结构或功能的描述仅用于举例说明基于本发明概念的实施例,基于本发明概念的实施例可以实施为多种形态,其不受本说明书所述实施例的限定。
基于本发明概念的实施例可以进行多种变更,可以具有多种形态,以下,对于实施例,将通过附图示出,通过本实施例详细描述。但,这不是采用特定的揭示形态限定基于本发明概念的实施例,且囊括着包括在本发明思想及技术范围的变更、等同物或替代物。
第一或第二等术语可以用于描述多种构件,所述构件不应当受到所述术语的限定。所述术语仅用于区别一构件与另外构件,例如,在不脱离基于本发明概念的权利要求书的状态下,第一构件可以命名为第二构件,类似地,第二构件也可以命名为第一构件。
记载有某构件与另外构件“连接”或“接入”时,应当理解为,可以直接与其另外构件连接或接入,也可以中间存在另外构件。与此相反,记载有某构件与另外构件“直接连接”或“直接接入”时,应当理解为,中间不存在另外构件。描述构件之间关系的表达中,例如,对于“在~之间”和“正处于~之间”或“与~直接相邻”等也应当做出相同的解释。
本说明书采用的术语仅用于描述特定实施例,不用于限定本发明。除非上下文明确表示具有不同的涵义,否则单数的表达包括复数的表达。应当理解,本说明书中,“包括”或“具有”等术语在指出实施特征、数字、步骤、动作、构件、部件或其组合的存在,不预先排除一个或其以上其他特征或数字、步骤、动作、构件、部件或其组合的存在或添加可能性。
除非另行定义,否则包括技术或科学术语在内,这里采用的所有术语具有的涵义应当解释为与本发明所属技术领域的通常技术人员平常理解的涵义一致。通用词典中定义的术语具有的涵义应当解释为与相关技术的说明书上具有的涵义一致,除非本说明书上明确地做出定义,否则不应当解释为理想化或过度形式化的涵义。
以下,参考附图详细说明实施例。但,专利申请的范围不受这种实施例的限制或限定。各个附图中示出的相同的参考符号表示相同的部件。
图1示出了本发明一实施例中光电探测器100的结构。
一实施例中,光电探测器100可以通过以下步骤工作:吸收表面等离子体激元(Surface plasmon polariton,SPP),该表面等离子体激元(Surface plasmon polariton,SPP)是表面等离子体(Surface plasmon,SP)与光波(Light wave)的光子(Photon)结合而生成的步骤;以及生成光电流的步骤。此时,为了生成光电流,光电探测器100可以通过被吸收的表面等离子体激元引起的隧穿诱导光电流而生成光电流。
具体地,一实施例中,光电探测器100可以包括金属层102、光吸收层104和半导体层105、106、107、108。
金属层102遮蔽入射光101,与表面等离子体相互作用来产生表面等离子体激元,在被遮蔽的入射光101的光子与电介质的接合面生成该表面等离子体。
并且,光吸收层104吸收产生的表面等离子体激元,使通过所述被吸收的表面等离子体激元和局部电场(Localized Electric Field)效应激发的电荷以绝缘膜为介质隧穿到半导体层105、106、107、108。
半导体层105、106、107、108可以基于被隧穿的电子的电场效应(Electricfield),诱导光电流。
为此,如图1所示,Node A106、Node B107、Node D108在硅基板上形成杂质的掺杂极性和浓度差。并且,Node C104可以隔着绝缘体105,由多晶硅或金属形成。
一实施例中,光入射到表面部,整个表面部用金属层102进行防护(Shield),NodeC作为光吸收层104,可以在上部配置非金属的高介电常数电介质,人为地形成不具备金属层纳米孔103(Nano hole),从而生成光电探测器100。
一实施例中,纳米孔103可以形成有介电常数高于空气的物质。例如,纳米孔103可以由包含Si3N4的物质形成。
在这种结构中,可视光和近红外光的光到达表面时,由于波长大于纳米孔103的尺寸,直接穿过不带金属的部分,无法生成半导体的激子。
但,入射光与金属引起相互作用(Coupling),转换成表面等离子体激元。被转换的表面等离子体激元传播(Propagation)表面的金属层102和电介质的界面,随之,与纳米孔103相遇。
表面等离子体激元在金属层102与电介质相遇的边缘部分形成LSP(Localizedsurface plasmon)。形成的表面等离子体激元将伴随强大的电场增强(Electric fieldenhancement),这将成为沿着硅基板方向产生电场的起因。
并且,表面等离子体激元基于从入射光转换的波向量(Wave vector),增加运动量和能量,比起多晶硅、硅氧化膜和基板的激子(Exiciton),起到更有效的作用,这导致电荷激发得多。
此时,被激发的电荷通过金属表面的纳米孔103边缘(Edge)部分的强大的增强型电场(Enhanced electric field),隧穿硅氧化膜进入Node C104,使Node C104的整个电荷量发生变化。
其结果,Node C104的电荷量变化会改变形成于硅氧化膜和硅界面的电流沟道的阈值电压,从而诱导光电流。
Node C104流入大量电子或者由金属形成时,可以考虑以下情况:被入射光转换的表面等离子体激元生成在Node A106和Node B107之间,直接增强光电流。
本发明将以下现象应用于光电探测器中:在纳米光子(Nano Photonics)环境,光通量不均匀,可以使光停止,光与金属表面的自由电子相互作用(Coupling),通过表面等离子体激元(Surface plasmon polariton,SPP),与电解质的分解面上产生强大的增强型电场(Enhanced electric field),该表面等离子体激元(Surface plasmon polariton,SPP)是表面等离子体(Surface plasmon,SP)作为自由电子的集体振荡与其光波(Light wave)结合的形态。
这是通常的光与金属相互作用而转换成表面等离子体激元的现象,光的波长被压缩,以运动量及能量增加的形态构成的新物理性质与半导体发生反应。并且,可以通过改变表面金属层的尺寸和结构来控制表面等离子体激元的共振(Resonance)光谱或色散峰(Dispersion peak)。如此,在光电探测器的工作和结构上,通过几种特殊的量子力学Quantum Mechanical)设计(Design),获得极其有效且创新的光电转换(Photo electricconversion)特性。
基于PN Junction结构的光探测器或者现有PAT-PD(Photon AssistedTunneling-Photo Detector)的光感应特性应用了从入射光的光子能量直接激发的电荷转换成电压的原理。因此,探测器的尺寸或入射光的角度等对于光电转换中的内量子效率产生很大的影响。但,本发明中,将光与金属的相互作用产生的表面等离子体激元和量子隧穿现象相结合的结构以及工作原理应用在新概念的光探测器时,可以将其特性扩展到图像传感器中。
即,将光入射到位于金属与电介质的接合面的表面等离子体(Surface Plasmon)上生成表面等离子体激元,该表面等离子体激元与纳米尺寸的人为金属结构体相遇时,会引起局部(Localized)的电场增强(Plasmonic Field-Enhanced),会出现相较于入射光,波向量(Wave Vector)变大的现象。此时,波向量变大意味着:相较于入射光,能量和运动量变大,而波长(Wavelength)变小。比起入射光直接被半导体吸收而生成激子(Electron-HolePair),在金属表面,将入射光转换成表面等离子体激元,与半导体相互作用(Coupling),从而应用在光激发时,可以获得内量子效率极高的光电转换特性。这意味着,要想有效生成及应用表面等离子体激元,应该选择介电常数高的物质,结构上,还要经过特殊的制作过程。
一实施例中,光电转换的工作原理及结构如下。受光部不采用由量子效率(Quantum Efficiency)低的PN接合组成的探测器。特别是,将受光部制作成具有以下形态的结构:使由于光生成于金属表面的表面等离子体激元与半导体中产生的激子(Exciton)相互作用,使此时激发的电子(Electrons)尽快隧穿(Tunneling)到隔着绝缘体的特定空间,然后,通过其隧穿的电子的电场(Electric Field)效应,诱导光电流(Photo current)。此时,引起有效隧穿的电场主要应用在:主要由表面等离子体激元和纳米结构体生成的局部表面等离子体(LSP,Localized Surface Plasmon)以及表面等离子体光子学电场增强(Plasmonic Field-Enhanced)效果。更具体地,为了局部产生电场增强(Electric FieldEnhancement),将受光部表面金属层的纳米尺寸从数十扩展至数百的同时,将其余部分全部遮蔽(Shield)。不带金属的扩展部分的物质主要采用介电常数(Dielectric Constant)高于空气(Air)的Si3N4等物质来调整厚度等,以使入射光(Induced Light)顺利到达电介质与金属的分界面。此时,与金属之间的分界面上,光子与表面等离子体相互作用而产生表面等离子体激元。此时,如果传播至金属表面的表面等离子体激元与纳米尺寸的非金属(nonmetallic)电介质相遇,会产生LSP的同时,在纵跨金属的边缘(Edge)部分引起电场增强现象。该电场增强可以使表面等离子体激元激发的电荷隧穿,有效诱导光电流。
但,即使入射光被转换成能量和运动量大的表面等离子体激元与激子相互作用,能量小于硅带隙能量的长波长范围下,例如,波长为1200nm以上时,激子的激发需要单独进行以下处理。
首先,光被吸收(Absorb)的路径中,特定部分在硅的带隙部分生成人为的(Artifial)Localized Interface States。通常,在制造装置之前阶段,通过几种硅基板表面清洗等,调整(Control)初始硅的悬空键(dangling bond)的结合状态(Bonding State)并进行控制,以使吸收长波长时,顺利形成激子。但,另外的N、Ge等物质可以在1至2单层与硅表面结合之后,形成氧化膜(Oxide Layer),单独生成Localized States。如此,形成于带隙内的Localized Quantum States可以通过与表面等离子体激元之间的相互作用,使空穴电子对(Electron-Hole Pair)进行跃迁(Transition),并转换(Conversion)成电信号。
在这种情况下,通常的Localized Quantum States由于密度不高,获得有效的光电转换(Photo electric conversion)特性并不容易。但,本发明中,入射光具有达到1200nm以上的长波长,其不直接生成激子,而是首先与金属接触而产生表面等离子体激元,利用表面等离子体激元的波向量相较于入射光的波向量(Wave Vector)变大的现象,实现光电转换。
即,入射光可以转换成振动频率(Frequency)相同而光速(Light Speed)改变的表面等离子体激元,传播(Propagation)至纳米尺寸的受光部(Light Receiving Area),有效激发(Excite)被Localized Quantum states捕获(Trapped)的电子。
PN接合二极管作为平常的光探测器,光吸收层(受光部)的面积对于受光效率直接产生影响,实际上,为了实现高敏感度特性,只能放大光入射面积。但,本发明中,通过纳米尺寸金属薄膜的纳米孔周边产生的等离子体振子电场增强效果隧穿的电荷引起栅极的电荷量发生变化,因此,在诱导光电流的结构以及工作原理上,光吸收面积越小,光电转换效率反而越高。
其原因在于:与金属相互作用而生成表面等离子体激元的波向量大于入射光的波向量(Wave Vector),导致了激发激子的能量和运动量增大。即,金属孔的尺寸缩小时,单位面积产生的局部电场(Localized Electric Field)的密度会增加,激发的电荷隧穿氧化膜的概率更高,生成的光电流也会大,因此,光电转换效率会变高。此时,金属层通常可以采用铝,但,表面进一步涂覆金(Au)或银(Ag)等贵金属(Precious Metal)时,可以使表面等离子体激元的生成更活跃。
图2示出了根据本发明一实施例的图像传感器200。
一实施例中,图像传感器200可以包括金属表面202、形成于金属表面202的金属纳米孔阵列201以及与金属纳米孔阵列201对应的位置形成的探测器阵列203。
并且,一实施例中,根据图像传感器200的工作方法,可以利用形成于金属表面的金属纳米孔阵列以及与金属纳米孔阵列对应的位置形成的探测器阵列生成光电流。
并且,为了生成光电流,根据一实施例的图像传感器200的工作方法可以包括:探测器阵列吸收表面等离子体激元(Surface plasmon polariton,SPP),该表面等离子体激元(Surface plasmon polariton,SPP)是所述金属表面形成的表面等离子体(Surfaceplasmon,SP)与光波(Light wave)的光子(Photon)结合而生成的步骤;利用吸收的表面等离子体激元生成光电流的步骤。
一实施例中,金属表面202遮蔽入射光,与表面等离子体相互作用来产生表面等离子体激元,在被遮蔽的入射光的光子与电介质的接合面生成该表面等离子体。
并且,一实施例中,探测器阵列203可以包括光吸收层206和半导体层207、208、209、210。
表示为Node C的光吸收层206吸收产生的表面等离子体激元,使通过所述被吸收的表面等离子体激元和局部电场(Localized Electric Field)效应激发的电荷以绝缘膜为介质进行隧穿。
并且,半导体层207、208、209、210可以基于被隧穿的电子的电场效应(Electricfield),诱导光电流。
一例中,探测器阵列203可以吸收表面等离子体激元(Surface plasmonpolariton,SPP)生成光电流,该表面等离子体激元(Surface plasmon polariton,SPP)是形成于金属表面202的表面等离子体(Surface plasmon,SP)与光波(Light wave)的光子(Photon)结合而生成。
一实施例中,可以在探测器阵列203正上方形成金属纳米孔阵列201。形成的各金属纳米孔之间的间距最小相隔几微米,实际上,由于这种结构,难以传播表面等离子体激元并对于相邻的金属纳米孔也产生影响。
如图2所示,表面等离子体激元基于从入射光204转换的波向量(Wave vector)增加运动量和能量。并且,运动量和能量得到增加的表面等离子体激元相较于多晶硅、硅氧化膜和基板的激子(Exiciton),做功更有效,可以激发的电荷多。
此时,激发的电荷通过金属表面的纳米孔201的边缘Edge部分的强力增强型电场(Enhanced electric field),隧穿硅氧化膜,进入到相当于光吸收层的Node C(206),改变Node C(206)的整个电荷量。并且,由于改变的整个电荷量,与氧化膜相邻的部分生成耗尽区,对于沟道的电场产生影响。其结果,Node C(206)的电荷量变化会改变形成于硅氧化膜和硅界面的电流沟道的阈值电压,诱导光电流。并且,从外部调整Node C(206)的电压时,可以随意调整敏感度、动态范围、信号的线性关系等输出特性等。
图3示出了能带图的光电流生成机制。
图3示出了基于光电探测器300的301方向截面能级的工作原理、基于302方向截面能级的工作原理。
首先,图310中,表面等离子体激元可以在Poly-Silicon Gate、Strained SiliconLayer、Bulk Silicon与各个能级相互作用,生成空穴电子对(Electron-Hole Pair)。并且,生成空穴电子对(Electron-Hole Pair)的同时,如附图符号310所示,激发的电子通过电场,在形成于硅界面的沟道和Node B等隧穿氧化膜。并且,电子进行隧穿的同时,使掺杂为P型的Node C和氧化膜之间的Node C区耗尽。
如附图符号320所示,Node C由于这种电子的隧穿而耗尽,这会导致整个电荷量发生变化。实际上,这会对于Node A、Node B之间的阈值电压(Threshold Voltage)产生影响。这与Node C电荷量变化产生影响的电流沟道之间电场的大小发生变化时出现的效果相同,通过沟道生成基于沟道导电率(Conductance)变化量的光电流。
此时,最终对于沟道导电率产生影响的还是通过表面等离子体激元激发的电子进行隧穿的现象。即,实际上,与表面等离子体激元之间的相互作用以及各能级决定光探测器的波长反应特性。光的入射被中断,处于暗电流(Dark)状态,表面等离子体激元的生成和相互作用被消失时,通过隧穿使Node C耗尽的电子再次隧穿到Node A和沟道区,使Node C的电荷量回复到原先状态。并且,沿着缩小耗尽层的方向实施其过程,沟道中表面等离子体激元产生的光电流也自然消失。
图4示出了光电流沟道直接生成表面等离子体激元的实施例400。
由于入射光生成的表面等离子体激元传播金属层401的表面时,如果与介电常数及金属纳米孔不同的电介质相遇,会发生表面等离子体激元的波向量被改变的现象。如此,重新生成的表面等离子体激元沿着半导体基板403方向传播。此时,根据纳米孔的尺寸,共振频率(Resonance Frequency)会发生变化,因此,可以依据待检测入射光的波长,调整纳米孔的大小。
特别是,将重新生成的表面等离子体激元诱导至硅基板和氧化膜402之间的沟道时,Node A和Node B之间的电极会发生偏置,表面等离子体激元直接作为光电流,通过NodeB流去。
并且,大量电子隧穿Node C,具有类似金属的特性。这种电子使接触Node C的氧化膜402电介质的分界面发生直接诱导表面等离子体激元的现象,进一步发生表面等离子体激元与激子(Exciton)相互作用的现象,从而造成直接增强光电流的情况。
图5示出了将基于金属组成的表面等离子体激元直接传播至光吸收层的实施例。
一实施例中,金属表面501可以将从表面延伸至光吸收层502而生成的表面等离子体激元引导至光吸收层502。
探测器阵列可以吸收表面等离子体激元(Surface plasmon polariton,SPP)生成光电流,该表面等离子体激元(Surface plasmon polariton,SPP)是形成于金属表面的表面等离子体(Surface plasmon,SP)与光波(Light wave)的光子(Photon)结合而生成。
实施例500采用通过表面等离子体激元,使光电转换进一步达到最高的方案,根据该构成,沿着半导体深度方向延伸金属表面501,引导表面等离子体激元。表面等离子体激元直接与Node C接触时,进一步产生纳米孔LSP效应的同时,可以使表面等离子体激元直接在沟道实现电场增强(Electric Field Enhancement)。由此,不依靠电荷隧穿实现阈值电压调制,也可以有效地诱导光电流。并且,位于氧化膜及其界面的Strained Layer与表面等离子体激元相互作用的概率变得更高,可以获得有效扩展的长波长反应特性。
图6示出了根据本发明的光谱敏感度(IPCE,Incident photon to currentefficiency)图表600。
图表600的横轴为Wavelength(nm),竖轴示出了Efficiency。
图表600中,可以确认到:入射光与金属层相互作用而生成的表面等离子体激元产生的增强型电场(Enhanced Electric Field)以及应用隧穿效应的光电转换效率。具体地,图表600示出了具备尺寸为200nm的纳米孔金属层的探测器结构上交替入射光波长范围而检测IPCE的结果。图表600的检测值是通过输入计算出的入射光光子数中,光电转换的输出电流的电荷数所占百分比。
从图表600可以确认,入射光的光子直接被半导体吸收时,在不能生成激子的450至950nm区,具有极高的光电转换效率(6000~16000%)。
特别是,图表600中,入射光的波长越长,效率越高,由此可知,依据纳米孔尺寸,LSP增强型电场(Enhanced Electric Field)的共振条件(Resonance Condition)位于入射光波长范围800nm附近。
其结果,利用本发明,可以通过金属层(Metal Layers)与入射光相互作用、介电常数不相同的接合面上生成的表面等离子体(Surface Plasmon,SP)和表面等离子体激元(Surface Plasmon Polariton,SPP),使表面等离子体激元直接增强光电流,从而实现光电转换。
并且,使通过入射光与金属层的相互作用生成的表面等离子体激元和局部电场(Localized Electric Field)效应激发的电荷,以绝缘膜为介质,隧穿到另外空间,使空间的电荷量和耗尽层的大小发生变化,然后,对于相邻电流沟道的阈值电压产生影响,使光感应能力达到最强。
上述内容虽然通过有限的附图描述了实施例,但,只要是该技术领域的通常技术人员,就可以依据上述记载进行多种修改和变形。例如,描述的技术以不同于所述方法的顺序实施,以及/或者,描述的系统、结构、装置、电路等的构件以不同于所述方法的形态进行结合或组合,或者,被其他构件或等同物代替或置换,也可以达到相同的效果。
因此,不同的表现、不同的实施例以及权利要求书和等同物也属于所附权利要求书的范畴。
Claims (16)
1.一种光电探测器,其特征在于:吸收表面等离子体激元(Surface plasmonpolariton,SPP)而生成光电流,该表面等离子体激元(Surface plasmon polariton,SPP)是表面等离子体(Surface plasmon,SP)与光波(Light wave)的光子(Photon)结合而生成。
2.根据权利要求1所述的光电探测器,其特征在于:通过所述被吸收的表面等离子体激元引起的隧穿来诱导光电流而生成所述光电流。
3.根据权利要求1所述的光电探测器,其特征在于:包括:
金属层,其遮蔽入射光,与表面等离子体相互作用来产生表面等离子体激元,在所述被遮蔽的入射光的光子与电介质的接合面生成该表面等离子体;
光吸收层,其吸收所述产生的表面等离子体激元,使通过所述被吸收的表面等离子体激元和局部电场(Localized Electric Field)效应激发的电荷以绝缘膜为介质进行隧穿;以及
半导体层,其基于所述被隧穿的电子的电场(Electric field)效应,诱导光电流。
4.根据权利要求3所述的光电探测器,其特征在于:包括:所述金属层包括至少一部分开放的纳米孔,所述产生的表面等离子体激元可以通过所述纳米孔被吸收到所述光吸收层。
5.根据权利要求4所述的光电探测器,其特征在于:所述纳米孔形成有介电常数高于空气的物质。
6.根据权利要求4所述的光电探测器,其特征在于:所述纳米孔可以由包含Si3N4的物质形成。
7.根据权利要求3所述的光电探测器,其特征在于:所述金属层可以包含铝(Al)、金(Au)和银(Ag)中至少一个。
8.根据权利要求3所述的光电探测器,其特征在于:所述金属层从表面延伸至所述光吸收层,可以将所述产生的表面等离子体激元引导至所述光吸收层。
9.一种图像传感器,其特征在于:
包括:
金属表面;
形成于所述金属表面的金属纳米孔阵列;以及
与所述金属纳米孔阵列对应的位置形成的探测器阵列,
所述探测器阵列可以吸收表面等离子体激元(Surface plasmon polariton,SPP),生成光电流,该表面等离子体激元(Surface plasmon polariton,SPP)是形成于所述金属表面的表面等离子体(Surface plasmon,SP)与光波(Light wave)的光子(Photon)结合而生成。
10.根据权利要求9所述的图像传感器,其特征在于:所述探测器阵列可以通过隧穿诱导光电流而生成所述光电流,该隧穿由所述被吸收的表面等离子体激元引起。
11.根据权利要求9所述的图像传感器,其特征在于:
所述金属表面遮蔽入射光,与表面等离子体相互作用来产生表面等离子体激元,在所述被遮蔽的入射光的光子与电介质的接合面生成该表面等离子体,
所述探测器阵列包括:
光吸收层,其吸收所述产生的表面等离子体激元,使通过所述被吸收的的表面等离子体激元和局部电场(Localized Electric Field)效应激发的电荷以绝缘膜为介质进行隧穿;以及
半导体层,其基于所述被隧穿的电子的电场(Electric field)效应,诱导光电流。
12.根据权利要求11所述的图像传感器,其特征在于:所述金属表面从表面延伸至所述光吸收层,可以将所述产生的表面等离子体激元引导至所述光吸收层。
13.一种光电探测器的工作方法,其包括:
吸收表面等离子体激元(Surface plasmon polariton,SPP),该表面等离子体激元(Surface plasmon polariton,SPP)是表面等离子体(Surface plasmon,SP)与光波(Lightwave)的光子(Photon)结合而生成的步骤;以及
利用所述被吸收的表面等离子体激元生成光电流的步骤。
14.根据权利要求13所述的光电探测器的工作方法,其特征在于:生成所述光电流的步骤可以包括:通过所述被吸收的表面等离子体激元引起的隧穿诱导光电流而生成光电流的步骤。
15.一种图像传感器的工作方法,其特征在于:
包括:
利用形成于金属表面的金属纳米孔阵列以及与所述金属纳米孔阵列对应的位置形成的探测器阵列生成光电流的步骤,
生成所述光电流的步骤可以包括:所述探测器阵列吸收表面等离子体激元(Surfaceplasmon polariton,SPP),该表面等离子体激元(Surface plasmon polariton,SPP)是形成于所述金属表面的表面等离子体(Surface plasmon,SP)与光波(Light wave)的光子(Photon)结合而生成的步骤;以及利用所述被吸收的表面等离子体激元生成光电流的步骤。
16.根据权利要求15所述的光电探测器的工作方法,其特征在于:生成所述光电流的步骤包括:通过所述被吸收的表面等离子体激元引起的隧穿诱导光电流而生成所述光电流的步骤。
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KR20220101133A (ko) | 2022-07-19 |
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