JP5123889B2 - 赤外光検出器 - Google Patents
赤外光検出器 Download PDFInfo
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- JP5123889B2 JP5123889B2 JP2009125194A JP2009125194A JP5123889B2 JP 5123889 B2 JP5123889 B2 JP 5123889B2 JP 2009125194 A JP2009125194 A JP 2009125194A JP 2009125194 A JP2009125194 A JP 2009125194A JP 5123889 B2 JP5123889 B2 JP 5123889B2
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- 230000007246 mechanism Effects 0.000 claims description 25
- 230000005284 excitation Effects 0.000 claims description 21
- 230000008878 coupling Effects 0.000 claims description 20
- 238000010168 coupling process Methods 0.000 claims description 20
- 238000005859 coupling reaction Methods 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 20
- 230000008859 change Effects 0.000 claims description 11
- 238000005036 potential barrier Methods 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 206010034960 Photophobia Diseases 0.000 description 3
- 208000013469 light sensitivity Diseases 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910002796 Si–Al Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Description
(実施例1)
図9(a)は、図3(a)(b)に示されている光結合機構110が形成されている場合の実験結果を表わしている。この場合、量子効率ηは7.8%であった。
(比較例1)
図9(b)は、長さl=2.8[μm]、かつ、幅w=0.5[μm]の相互に中央部分で直交する線分により構成される十字形状の窓が、x方向およびy方向のそれぞれに周期p=2.8[μm]で相互に連続して配列されている金属薄膜により光結合機構110が形成されている場合の実験結果を表わしている。この場合、量子効率ηは1.6%であった。
(比較例2)
図9(c)は、各辺の長さw=3.3[μm]の正方形状の窓が、x方向およびy方向のそれぞれに周期p=4.0[μm]で相互に離れて配列されている金属薄膜により光結合機構110が形成されている場合の実験結果を表わしている。この場合、量子効率ηは1.5%であった。
(比較例3)
図9(d)は、各辺の長さw=1.9[μm]の正方形状の窓が、x方向およびy方向のそれぞれに周期p=4.0[μm]で相互に離れて配列されている金属薄膜により光結合機構110が形成されている場合の実験結果を表わしている。この場合、量子効率ηは2.5%であった。
Claims (3)
- 2次元電子層である第1電子層において電気的に孤立した状態が維持されうる第1電子領域と、
入射赤外光に応じて前記第1電子領域に垂直な振動電場成分を生成することにより電子を励起し、前記第1電子領域に形成されている量子井戸のサブバンドの間で遷移させる光結合機構と、
前記第1電子層に対して中間絶縁層を介して平行に配置されている2次元電子層である第2電子層において、前記光結合機構により励起された電子が前記第1電子領域から流出した結果として電気伝導度が変化する伝導チャネルと、
前記第1電子領域が外部電子系から電気的に遮断されている遮断状態と、前記外部電子系と電気的に接続されている接続状態とを切り替える状態制御機構とを備え、
前記伝導チャネルの指定方向についての電気伝導度の変化を検出することにより前記入射赤外光を検出する赤外光検出器であって、
単一の前記第1電子領域が、相互に電気的に独立しているとともに、前記伝導チャネルに対向して前記指定方向に並んでいる複数の前記第1電子領域に分割され、
前記複数の第1電子領域のそれぞれについて所定条件が満たされるように前記外部電子系が構成され、
前記所定条件は、前記接続状態における前記第1電子領域のそれぞれの前記励起サブバンドの電子エネルギーレベルが、前記伝導チャネルにおいて前記第1電子領域のそれぞれに対向する第2電子領域のそれぞれにおけるフェルミ準位に対して、前記遮断状態における前記第1電子領域のそれぞれの励起サブバンドに遷移した電子が、前記第2電子領域のそれぞれに流出しうる程度に高くなるという条件であることを特徴とする赤外光検出器。 - 請求項1記載の赤外光検出器において、
前記第2電子領域のそれぞれが、前記第1電子領域のそれぞれの前記外部電子系として構成されていることを特徴とする赤外光検出器。 - 請求項1記載の赤外光検出器において、
前記中間絶縁層とともに前記一の2次元電子層を挟む上部絶縁層の上面において前記単一の第1電子領域を横断するように複数のゲート電極が形成され、
それぞれの前記ゲート電極にバイアス電圧が印加されて前記一の2次元電子層に電位障壁が形成されることにより、前記単一の第1電子領域が前記複数の第1電子領域に分割されることを特徴とする赤外光検出器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009125194A JP5123889B2 (ja) | 2009-05-25 | 2009-05-25 | 赤外光検出器 |
EP10780379.3A EP2426738B1 (en) | 2009-05-25 | 2010-04-16 | Infrared light detector |
US13/322,208 US8395142B2 (en) | 2009-05-25 | 2010-04-16 | Infrared light detector |
PCT/JP2010/056864 WO2010137422A1 (ja) | 2009-05-25 | 2010-04-16 | 赤外光検出器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009125194A JP5123889B2 (ja) | 2009-05-25 | 2009-05-25 | 赤外光検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010272794A JP2010272794A (ja) | 2010-12-02 |
JP5123889B2 true JP5123889B2 (ja) | 2013-01-23 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2009125194A Expired - Fee Related JP5123889B2 (ja) | 2009-05-25 | 2009-05-25 | 赤外光検出器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8395142B2 (ja) |
EP (1) | EP2426738B1 (ja) |
JP (1) | JP5123889B2 (ja) |
WO (1) | WO2010137422A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013090233A (ja) | 2011-10-20 | 2013-05-13 | Sony Corp | 撮像素子およびカメラシステム |
US9293627B1 (en) * | 2012-12-03 | 2016-03-22 | Sandia Corporation | Sub-wavelength antenna enhanced bilayer graphene tunable photodetector |
JP6342674B2 (ja) * | 2014-02-27 | 2018-06-13 | 国立研究開発法人科学技術振興機構 | 赤外光検出器、赤外顕微鏡、および、赤外分光器 |
US10439093B2 (en) * | 2016-04-15 | 2019-10-08 | Arizon Board Of Regents On Behalf Of Arizona State University | Antenna-assisted photovoltaic graphene detectors |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US4106044A (en) * | 1974-03-16 | 1978-08-08 | Nippon Gakki Seizo Kabushiki Kaisha | Field effect transistor having unsaturated characteristics |
US5309007A (en) | 1991-09-30 | 1994-05-03 | The United States Of America As Represented By The Secretary Of The Navy | Junction field effect transistor with lateral gate voltage swing (GVS-JFET) |
JPH114017A (ja) * | 1995-10-16 | 1999-01-06 | Toshiba Corp | 光学装置 |
JP3192397B2 (ja) * | 1997-11-19 | 2001-07-23 | 株式会社東芝 | 電子機能素子の製造方法 |
JP3743745B2 (ja) | 1998-08-31 | 2006-02-08 | 株式会社東芝 | 半導体素子 |
JP4281094B2 (ja) * | 2004-07-09 | 2009-06-17 | 独立行政法人科学技術振興機構 | 赤外光検出器 |
JP5240748B2 (ja) | 2007-02-19 | 2013-07-17 | 独立行政法人科学技術振興機構 | 赤外光検出器 |
-
2009
- 2009-05-25 JP JP2009125194A patent/JP5123889B2/ja not_active Expired - Fee Related
-
2010
- 2010-04-16 EP EP10780379.3A patent/EP2426738B1/en active Active
- 2010-04-16 WO PCT/JP2010/056864 patent/WO2010137422A1/ja active Application Filing
- 2010-04-16 US US13/322,208 patent/US8395142B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP2426738B1 (en) | 2019-10-02 |
US20120068158A1 (en) | 2012-03-22 |
EP2426738A1 (en) | 2012-03-07 |
WO2010137422A1 (ja) | 2010-12-02 |
US8395142B2 (en) | 2013-03-12 |
EP2426738A4 (en) | 2012-07-18 |
JP2010272794A (ja) | 2010-12-02 |
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