CN102446774B - 半导体元件安装用基板的制造方法 - Google Patents
半导体元件安装用基板的制造方法 Download PDFInfo
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- CN102446774B CN102446774B CN201110303104.6A CN201110303104A CN102446774B CN 102446774 B CN102446774 B CN 102446774B CN 201110303104 A CN201110303104 A CN 201110303104A CN 102446774 B CN102446774 B CN 102446774B
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims abstract description 30
- 230000033228 biological regulation Effects 0.000 claims abstract description 21
- 108091008695 photoreceptors Proteins 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 230000007261 regionalization Effects 0.000 claims description 2
- 239000011347 resin Substances 0.000 abstract description 12
- 229920005989 resin Polymers 0.000 abstract description 12
- 230000006978 adaptation Effects 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000001994 activation Methods 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Abstract
Description
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-223374 | 2010-10-01 | ||
JP2010223374A JP5370330B2 (ja) | 2010-10-01 | 2010-10-01 | 半導体素子搭載用基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102446774A CN102446774A (zh) | 2012-05-09 |
CN102446774B true CN102446774B (zh) | 2016-01-20 |
Family
ID=46009164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110303104.6A Active CN102446774B (zh) | 2010-10-01 | 2011-09-29 | 半导体元件安装用基板的制造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5370330B2 (zh) |
KR (1) | KR101671037B1 (zh) |
CN (1) | CN102446774B (zh) |
TW (1) | TWI517208B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6099369B2 (ja) * | 2012-11-20 | 2017-03-22 | Shマテリアル株式会社 | 半導体素子搭載用基板及びその製造方法 |
JP6099370B2 (ja) * | 2012-11-21 | 2017-03-22 | Shマテリアル株式会社 | 半導体素子搭載用基板及びその製造方法 |
JP2015211157A (ja) * | 2014-04-28 | 2015-11-24 | 三菱電機株式会社 | パワー半導体モジュールおよびその製造方法 |
JP6299004B2 (ja) * | 2015-04-30 | 2018-03-28 | Shマテリアル株式会社 | 半導体素子搭載用基板及び半導体装置、並びにそれらの製造方法 |
JP6555927B2 (ja) * | 2015-05-18 | 2019-08-07 | 大口マテリアル株式会社 | 半導体素子搭載用リードフレーム及び半導体装置の製造方法 |
CN109565941B (zh) | 2016-08-10 | 2021-07-20 | 株式会社村田制作所 | 陶瓷电子部件 |
CN108269736B (zh) * | 2018-01-25 | 2020-09-01 | 深圳市华星光电技术有限公司 | 通过光阻剥离实现电极层图案化的方法 |
CN114501801A (zh) * | 2020-10-28 | 2022-05-13 | 深南电路股份有限公司 | 一种线路板的加工方法及线路板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5091288A (en) * | 1989-10-27 | 1992-02-25 | Rockwell International Corporation | Method of forming detector array contact bumps for improved lift off of excess metal |
CN100439233C (zh) * | 2002-09-12 | 2008-12-03 | 好利获得I-Jet股份公司 | 有选择地覆盖微加工表面的方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4362809A (en) * | 1981-03-30 | 1982-12-07 | Hewlett-Packard Company | Multilayer photoresist process utilizing an absorbant dye |
JPS616830A (ja) * | 1984-06-21 | 1986-01-13 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
JPH04196152A (ja) * | 1990-11-26 | 1992-07-15 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
JPH0715113A (ja) * | 1993-06-24 | 1995-01-17 | Hitachi Ltd | プリント配線パターン形成方法 |
JPH0722735A (ja) * | 1993-07-05 | 1995-01-24 | Ibiden Co Ltd | プリント配線板 |
JPH081810A (ja) * | 1994-06-20 | 1996-01-09 | Koichi Ishida | 等方性エッチングにより形成する微小レンズ |
JP2007093958A (ja) * | 2005-09-28 | 2007-04-12 | Sumitomo Heavy Ind Ltd | パターン加工方法 |
-
2010
- 2010-10-01 JP JP2010223374A patent/JP5370330B2/ja active Active
-
2011
- 2011-08-24 TW TW100130384A patent/TWI517208B/zh active
- 2011-09-26 KR KR1020110096884A patent/KR101671037B1/ko active IP Right Grant
- 2011-09-29 CN CN201110303104.6A patent/CN102446774B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5091288A (en) * | 1989-10-27 | 1992-02-25 | Rockwell International Corporation | Method of forming detector array contact bumps for improved lift off of excess metal |
CN100439233C (zh) * | 2002-09-12 | 2008-12-03 | 好利获得I-Jet股份公司 | 有选择地覆盖微加工表面的方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201236051A (en) | 2012-09-01 |
TWI517208B (zh) | 2016-01-11 |
KR101671037B1 (ko) | 2016-10-31 |
JP2012079905A (ja) | 2012-04-19 |
CN102446774A (zh) | 2012-05-09 |
KR20120034566A (ko) | 2012-04-12 |
JP5370330B2 (ja) | 2013-12-18 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: YOULI MATERIAL CO., LTD. Free format text: FORMER OWNER: SUMITOMO METAL MINING CO., LTD. Effective date: 20131127 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20131127 Address after: Tokyo, Japan Applicant after: SH MATERIALS CO.,LTD. Address before: Tokyo, Japan Applicant before: SUMITOMO METAL MINING Co.,Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180712 Address after: Japan Kagoshima Patentee after: Oguchi Electric Materials Co.,Ltd. Address before: Tokyo, Japan Patentee before: SH MATERIALS CO.,LTD. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231128 Address after: The road development processing zone Kaohsiung city Taiwan China No. 24 Patentee after: CHANG WAH TECHNOLOGY Co.,Ltd. Address before: Japan Kagoshima Patentee before: Oguchi Electric Materials Co.,Ltd. |