TWI225702B - Method of manufacturing lead frame - Google Patents

Abstract

A method in which a raw material for a lead frame is used to manufacture a lead frame having a plating area, which is formed by a photometric method, at its recessed part and planar part other than the recessed part, wherein a resist layer which was used as a mask for etching is then used as a mask for plating.

Description

Case No. 9210167 纟 曰 Five, description of the invention (1) [Technical field to which the invention belongs-The method of the present invention relates to a method for manufacturing a lead frame by photometry (photometries " Green 4 is a method for manufacturing etched recesses and unetched [prior art] Λ frames. As one of the yak-equipped wafers on which semiconductor elements are mounted, the lead frame is mainly electrically connected by the electrode parts. In order to manufacture the lead frame with the small size of the conventional electronic equipment that has not been subjected to the semiconductor device surface, the method of engraving is used because of the high density of engraving. Due to the problem of processing accuracy, etching is often used. For example, in the wire Frame the photoresist sound with & pole μ + (resist) and there are two ^ = photosensitive photoresist material = mask for entrance and exit, facing the lead frame; engraving, and then remove the remaining Constructed by a photoresist layer: At this moment, the electricity is taken into consideration. “Considering to obtain # good ~ and other factors, such as key recording, forging, and mining gold when the material is copper. This type of BCC (Bump Clip Carrier) The wire frame is a recess formed on the lead frame material by the aforementioned etching method to form the electrode portion Π 0 and the chip mounting portion 120, and then a necessary portion including the recess is provided with a dissolution characteristic different from that of the lead frame material. For the plating layer. When using a lead frame for BCC (Figure 1 (A)), as shown in Figures 1 (A) to (D),

314355 (Revised version) .ptc Page 6 Revision — ^^ 92101673 V. Description of the invention (2) 'On the surface of the concave chip &# 130 element. Lightning load / 卩 I20 is equipped with a semiconductor element 130, and the semiconductor pattern (β)), Rand, 虽 —the concave part and the concave electrode part 110 are welded on the inside surface (the first wire frame material 仃 resin package (the first 1) (C)), then dissolve and remove the guide and other 4 (D)). Therefore, the size of the package can be reduced compared to the use of the BCC lead frame seal. In the case of a flat part, and in the case of a wood frame, when the chip mounting part has a concave part at the same time, the flat part other than the concave part also needs to be plated during the operation. The photoresist layer used for plating, and the photoresist layer used for etching cannot be used directly as an electric mask for warming the umbrella. Once peeled off, the photoresist layer needs to be set up again. For example, a mask for electroplating is obtained, followed by a variety of procedures for the lead frame, and a straight-bladed W knife is used for plating, and then the mask for electroplating is removed. Although the lead frame for BCC is more expensive than the package size package, it has its advantages in [invented internal capacity], but it is difficult to be widely used. Technical Problems to be Solved by the Invention The present invention "The sun and the moon t", "Concavity and Concavity": The purpose is to provide a low-cost method to solve the above problems. A step of the method for manufacturing a lead frame having a plated area on a portion other than the shape shown in the following steps is a method of manufacturing the frame. A first area defined by a mask is etched by etching, and a second mask area is electroplated in such a manner as to include the first area. (1) The step of providing a photoresist layer on the surface of the lead frame sheep's soil r9 ^, the wood material ；; the step of closely contacting the first mask on the surface, and performing the exposure by the first exposure method 1225702 _Case No. 92101673 _ V. Description of the invention (3) steps; (3) the steps of removing the first mask, closely contacting the second mask, and performing the exposure in the second exposure mode; (4) removing the second mask and using the first display A step of developing in an image-forming manner to form an etching mask made of a photoresist layer as in the first region; (5) forming a concave portion by etching the lead frame material exposed from the etching mask; (6) a step of developing in a second development mode to form a plating mask composed of a photoresist layer as a second region; and (7) a lead frame exposed from the plating mask The step of plating with a material, and removing the photoresist layer by the first exposure method, the second exposure method, and the first development method, leaving the photoresist layer by the second exposure method and the first development method, and With the second exposure method, the first development method and the second development method, Go photoresist layer. In another aspect of the method for manufacturing a lead frame of the present invention, the first region defined by the first mask is made into a concave portion by an etching method by a photometric method having the following steps, and the first region is included in the first region. The area is plated on a second area defined by the second mask. (1) the step of providing a first photoresist layer on the surface of the material for the lead frame, and providing a second photoresist layer having a lower sensitivity than the first photoresist layer on the first photoresist layer; (2) closely contacting the first mask on the surface Step of performing exposure in the first exposure mode (3) removing the first mask, closely contacting the second mask, and performing the exposure in the second exposure mode;

314355 (revised version) .ptc Page 8! 2257〇2 Case No. 92101673 Description of the invention (4) Five (4) Take off the second mask, the first development mode ^ area to the area is composed of a photoresist layer The step of masking the surface is formed as described in (5), and the step of forming a concave portion is performed on the lead frame exposed from the mask for etching. The step of forming a concave portion is performed by feeding; T > = second development A method of performing development to form a mask for electroplating such as a layer; and exposing (c) the light in the c domain from the mask for electroplating

In the step, the material of the lead frame is subjected to I $. By the first exposure method and the second exposure method, the first photoresist layer and the first and second development methods and the first development method can be removed, and the first: Layer 'by the second :: save' by the second exposure method, the "first-resistance layer" to make the first light "light side to remove the first photoresist layer. The-development mode and the second display of the present invention The lead frame & + formula can use the steps shown below, using a juxtaposed pattern, which is a two pattern and a third pattern that shields the light from the first pattern and a semi-transparent pattern; defined by a pattern of light The photometric method of the first region, the first, the second, and the second region is plated by the rikt specification. Then the surface cost of the step frame material is provided with a photoresist layer composed of a positive photoresist. Steps of masking, exposing, and removing the mask · H develops the image in the first development mode to form a mask for etching that is composed of the first region; _ 的 由 先 阻 (4) Step of forming a concave portion from the exposed lead frame for etching; a special material is etched 1225702

The area is made of light jt and No. MK 92101673 V. Description of the invention (5) (5) The step of developing the image using a second development mode and forming a mask for electroplating; Use the exposed material of the lead frame to perform electrical step mining and exposure. Exposure to the first area and the first development method, the photoresist layer, use the exposure to the _: and # 一 display = to save, borrow By the exposure to the second area, the first formula makes the first resist layer remain L. ^ l7 ^ X. Bb a ψ especially the development method and the second developer = to remove the first resist layer 'and borrow the third pattern The third area that shields the light will leave the following 5 J :: υ frame manufacturing method in another aspect, by using the following steps, using a first pattern of light transmission, a second pattern of light, and a mask The photometric method of the mask of the third pattern of light. The third region of the masked light is recessed by the engraving method, and -9 performs electroacoustic sound on the second region defined by the light transmitted through the second pattern ^ ·. 1 ^ (1) a step of providing a photoresist layer composed of a negative photoresist on the surface of the material for the lead frame; (2) a step of connecting a mask to the surface φ, exposing and removing the mask; (3) the first A developing method is used for developing to form an etching mask formed as the $ area | < φ $ (4) by lifting the lead frame exposed from the etching mask to form a recess. Step of the shape; step of developing a photoresist in a wood material by a photoresist (5) in a second development mode to form a mask for electroplating formed as a first layer; and (6) a step for plating from the electroplating Lead frame parts exposed by the mask

Steps, + plating with materials

314355 (revised version) .ptc 1225702 _ Case No. 92101673_ Revision 1 in the middle of the month _ V. Description of the invention (6) The photoresist layer can be removed by the first development method, and the exposure and The first development mode leaves the photoresist layer. The photoresist layer can be removed by exposure to the second area, the first development mode and the second development mode, and by exposure to the first area, the first development The imaging method and the second developing method make the photoresist layer remain. In another aspect of the method for manufacturing a lead frame of the present invention, the first area defined by the first part of the mask is made by the photometric method using the mask having the first part and the second part by the steps shown below. The recessed portion is formed by the etching method, and the second region defined in the second portion is plated so as to include the first region. (1) a step of providing a photoresist layer on the surface of the material for the lead frame; (2) a step of exposing the surface to the first portion of the mask in a first exposure manner; (3) a step of closely contacting the mask in the first area The second part is the step of performing exposure in the second exposure mode; (4) the step of developing in the first development mode to form a mask for etching, which is formed by a photoresist layer in the first area; (5) borrowing A step of forming a concave portion by etching the lead frame material exposed from the mask for etching; (6) developing in a second development mode to form a plating formed of a photoresist layer as a second region A step of using a mask; and (7) a step of electroplating the lead frame material exposed from the plating mask, and light can be removed by the first exposure method, the second exposure method, and the first development method Barrier layer, using the second exposure method and the first development method

314355 (revised version) .ptc Page 11 1225702 Amendment 92101673 V. Description of the invention (7) Method, the first development method and the first | photoresist layer remain, and the second | development method can remove the photoresist layer Another method of manufacturing the invented lead frame can perform the steps shown below, using the juxtaposed section: η: the first part of the mask refers to the mask of the knife and the first part by the I photometric method I is a concave portion, and the second region :: ^:] domain is formed by etching to form a second region for electroplating. According to the formula, (1) a photoresist layer is provided on the surface of the lead frame material (2) the first part of the mask is closely contacted with the surface, and the second exposure + + (3) the second part of the first area is closely contacted with the mask Adjacent to two y, the first part of the mask is in close contact with the lead frame. It is a step of sequentially exposing the mask by moving the mask to expose it; /, the surface part is carried out (4) the first imaging method is carried out Step of developing and forming a mask for etching such as a mouth layer; Step of forming a concave part by photoresist (5) in the first region by forming a mask on the I exposed from the mask for etching; The step of using the material to develop the surname (6) in a second development mode to form a mask for electroplating such as the first and second layers; and a region of photoresist 1 (7) for the mask from the electroplating The exposed lead frame | step, the material is electroplated, and through two exposures and the first development mode, the photoresist layer can be left in one exposure and the first development mode. ^ Remove the photoresist layer. The first development mode and the second development mode can be removed by a single exposure in the etching area and the plating area. Adjacent photoresist layer. A photoresist layer that is insensitive to exposure at 10% is preferred. , Location, or near shape

314355 (revised version) .ptc page 12 1225702 ------------ ^^^ １〇1673_% year A month a day amended V. Description of the invention (8) [Embodiment]

In the first aspect of the method of the present invention, the positional relationship between the material for the lead frame, the mask, and the photoresist layer with different oblique lines representing changes in the photosensitive state is shown in Figures 2 (A) to (C), Shown as a continuous cross-sectional view. That is, a photosensitive photoresist layer is provided on the surface of the ^^ wire frame using a material (Fig. 2 (a)), and firstly exposed with a mask having a desired etching resist pattern (Fig. 2 (B)). A mask with a plated pattern is exposed (FIG. ^ (C)): As a result, the photoresist layer corresponding to the etched part may be easily opened even under a mild developing stripe, and does not correspond to the etched part. The photoresist layer corresponding to the plated part is only after stronger developing conditions. The essence of the invention is to use this result. The exposure conditions and development conditions of the interbody are not particularly limited because they depend on the material used to form the photoresist layer. If necessary, it is ideal to obtain the prerequisites for implementation in advance. The usable photoresist can be a photosensitive photoresist or a thermal photoresist; its shape is also a film or a liquid. FIG. 2 (㈧ to ((;) is a post-production process of surface development, etching, second development, and plating. In a second aspect of the method of the present invention, a material for a lead frame, a mask, And the positional relationship of the photoresist layer with different oblique lines indicating the change in the photosensitive state is shown in Figure 3 (A) and (B) in a continuous cross-sectional view. That is, 'the degree of exposure is separated by stage (3 (B)), in the first development process, only the photoresist position corresponding to the part to be etched is opened. Then, the second development process is performed after etching. At this time, the Except for the part corresponding to the part, remove the photoresist layer corresponding to the part to be plated. The photoresist layer in this part will be in the first place due to insufficient light transmission.

1225702

Case No. 92101673 V. Description of the invention (9) Residues in the second development process can only be completely removed in the second development process. Therefore, this part functions as an etching mask after the first development. Liyangyang:;: The specific exposure conditions and development conditions are not limited because they depend on the materials used to form the first barrier. If necessary, the conditions prior to implementation are ideal. ^ & The available photoresist can be a photosensitive photoresist or a thermal photoresistor. It can be a film or a liquid. Figures 3 to 袅 show the post-development, development, second development, and plating processes. Table 3 shows that in the third aspect of the method of the present invention, the mask and the photoresist material and the relationship indicating the change in the photosensitive state with different oblique lines are shown in FIGS. 4 (A) to (D). As a continuous photoresist layer on the surface of the material for the lead frame, it is expressed. Sensitivity is first placed on the side of the material for the lead frame (Figure 4 puts high resistance on the outside, and 2 types of% ^ β, general # 一 # layer of negative photoresist are obtained by laminating (No. 4 Temple First ( B)). On the photoresist layer obtained from the sample, ^ Figure 4 (Figure 4 (C)), and then close the first and first mask and then bury it, and then expose the Tian mask (Figure 4) (D)). Because the part that should be etched is not sensitive, it is easy to η η. It is easy to open on shores other than the part that should be etched. The layer is only received once, so it will remain in the initial development, and it will be exposed to humans. The death and injury play a mask for etching.

However, the remaining photoresistance of the electroplated part should be removed to form a mask for electroplating. s is reduced in the first K development. In this case, the specific exposure order development can be the same condition, but also the first development and the different conditions. If necessary ~ w thing

314355 (revised version). The ptc photoresist layer depends on the material of the photoresist layer, so it has no parts. It is similar to 702. Modified ^^ _ i21〇1673 ^ V. Description of the invention (10) It is better to obtain the conditions mentioned before implementation. The available photoresist can be used to operate a film-like photoresist, but a liquid-like photoresist is not necessary. The ideal for historical use, another aspect of this method, is, for example, at the lead frame station and hopeful dream 2-hopefully etch the pattern -0 on the surface of the photoresist layer and then expose it, # 、 冬The second part of the close-packed etching pattern overlaps at a predetermined position to align the position of the frame material. = Second case, the second part can be easily guided with green, = the mouthman is in a mild development condition. The resistance layer is also stronger. Only after the development conditions ;;, the light corresponding to the ministry is exposed and developed in this way. The essence of narration is to be beneficial. In the foregoing aspect, regarding the photoresistive screen material, the mask, and the relationship between the &#; ^ Θ ^, the lead frame g is represented by different oblique lines. Shi Private Door ’depends on the specific exposure bar, so there is no special limit. If necessary, the conditions are based on the materials used. The conditions are ideal. In addition, before the exposure is obtained in advance, the exposure may be performed separately, or a plurality of the first part: the first part and the second part may be separated. 1 knife and multiple second exposure at a time. The available photoresist can be photosensitive, its form is also $, it can be film-like, it can also be thermal photoresistor; and, in other forms, the lead frame ^.

The IM line indicates the positional relationship between the photoresist material, the mask, and the photoresist layer with different oblique changes in the photosensitive state. And completely insensitive in exposed light ——_ ^ 5 pictures (A) to (C),

314355 (revised version) ptc 1225702

The method of the present invention will be described below with examples. Example 1 = Explanation according to the continuous sectional views shown in Figs. 2 (A) to (G).媸 For the expansion, a copper sheet with a thickness of 125mm, a width of 35mm, and a length of 150 mm is used as a guide concave bottom edge = 558). There will be four openings with a side of 20mm to form I and a bottom π. Part and the first mask 16 with a diameter of 0.5mm equally arranged on both sides of the concave bottom, for forming a pattern of the opening portion of the concave electrode pad part, is in close contact with the photoresist The surface of the layer was irradiated with 30 m of ultraviolet rays. Then 'remove the first mask 16, there will be provided four openings with a side of 22 mm for plating on the concave bottom, and a diameter of 0. 0 0 0 mm equally arranged on both sides of the concave bottom, for a total of 25 Five second masks 丨 8 for the pattern of the openings for electroplating the concave electrode pads were closely adhered to the surface of the photoresist layer and irradiated with ultraviolet light of 10 mJ. Next, 'the second mask 18 is removed, and it is immersed in a sodium carbonate solution for 40 seconds to develop a photoresist layer to produce a mask for etching. Then, the surface portion of the exposed lead frame material is half-etched to form a concave bottom and an ω-shaped electrode.

314355 (revised version) .ptc page 16 1225702 _____ case number 92101673_year left month day _ amendment V. Description of the invention (12) Pad. Next, it was immersed in a sodium carbonate solution for 80 seconds, the photoresist layer was developed again, and a mask for an electric key was found. Then, gold strike plating was performed on the surface of the lead frame material exposed from the power mining mask, followed by a palladium plating layer with a thickness of 1 // m, and a nickel plating layer with a thickness of 6 / zm. With the average thickness of the outermost layer I " m palladium plating layer. Thus, a BCC lead frame is formed. In this embodiment, it takes 5 hours to manufacture 1,000 lead frames. Next, semiconductor components were mounted using the lead frame for BCC thus obtained, and 500 BCCs were fabricated. Dissolve and remove lead frame materials. The obtained B C C was mounted on a printed wiring board by solder reflow (r e f 1 0 w), and a continuity test was performed. As a result, there was no poor conduction. Conventional Example 1 is explained with reference to the continuous sectional views shown in FIGS. 6 (A) to (I). A copper sheet material with a thickness of 125mm, a width of 35mm, and a length of 150mm is used as the wire frame wood material i 2, and a photoresist layer i 4 (made by Asahi Kasei Corporation, product, AQ-2558) is provided on the surface. Each of them has a diameter of 20 mm to form a concave bottom, and a diameter of 255 equally arranged on both sides of the concave bottom to form a concave σ portion 毺 of a concave electrode pad portion. A mask 16 is in close contact with the surface of the photoresist layer and irradiates 80 mJ of ultraviolet light. Then, the first mask 16 is removed to develop the photoresist layer, and the surface of the masking material for etching is semi-etched to form a part. Dip in a sodium carbonate solution for 40 seconds and cover. Then, the exposed lead frame is formed into a concave bottom and welded to the concave electrode. ^ Remove the mask for the rest of the time, and set light on the surface of the lead frame material.

314355 (revised version). Ptc page 17 it 1225702 _ case number 92101673 —__ $ 年 # 月 一 ^ 日 改 __ V. Description of the invention (13) Resistive layer (made by Asahi Kasei Corporation, trade name: AQ-2558), will There are four having a diameter of 2 2 mm for the concave bottom, and a diameter of 0. 0 0 mm equally arranged on both sides of the concave bottom, for a total of 2 2 5 for the concave electrode welding. The second mask 18 of the pattern of the opening portion where the plating is to be plated is in close contact with the surface of the resist layer, and is irradiated with 80 mJ of ultraviolet rays. Next, 'the second mask 18 is removed, and it is immersed in a sodium carbonate solution for 40 seconds to develop a photoresist layer to produce a mask for electroplating. Then, gold plating is performed on the exposed surface portion of the lead frame material, followed by a palladium plating layer having a thickness of 1 # m, a nickel plating layer having a thickness of 6 // m, and a plating layer having an average thickness of m as the outermost layer. . Thus, a B C C lead frame is formed. In this conventional example, it takes 8 hours to manufacture j OO lead frames. Evaluation of the same continuity test as in Example 1 was performed, and as a result, no poor conduction occurred. Embodiment 2 is explained with reference to the continuous sectional views shown in Figs. 4 (A) to (i). A copper sheet material having a thickness of 0125 mm, a width of 35 mm, and a length of 150 mm was used as the lead frame material 12, and a high-sensitivity photoresist film 20 ("LF1 410", manufactured by Li Kasei Co., Ltd.) was laminated on the surface, and a general sensitivity was laminated thereon. Photoresist film

1225702, case number 92101673, year and month V. Description of the invention (14) 0 · 0 0 0 m m, a total of 2 2 5 are used for welding the concave electrode to the concave electrode >. ° 丨 Choose ^ 亍 The second mask 18 of the pattern of the opening of the electric bell is in close contact with the surface of the photoresist layer,

w emits 30 m J of ultraviolet rays. Next, the second mask 18 was removed and immersed in a sodium carbonate solution for 40 seconds to develop a photoresist layer to prepare a mask for etching. Then, the surface of the exposed wire frame is semi-etched to make a concave bottom and a concave electrode ^. Next, it was immersed in a sodium carbonate solution for 40 seconds, and the photoresist layer was developed again to obtain a mask for electroplating. Then, the exposed surface portion of the lead frame material is subjected to gold plating, followed by a palladium plating layer with a thickness of 1 // m, a coin nickel layer with a thickness of 6 // m, and an average thickness of 1 / m as the outermost layer. Layer of palladium. Thus, a lead frame for BCC is formed. In this embodiment, it takes 6 hours to manufacture 1,000 lead frames. Evaluation of the same continuity test as in Example 1 was performed, and as a result, no poor conduction occurred. Embodiment 3 is explained with reference to the continuous sectional views shown in FIGS. 3 (A) to (F). A copper sheet material with a thickness of 125 mm, a width of 35 mm, and a length of 150 mm was used as the lead frame material 12, and a photoresist layer 14 (made by Asahi Kasei Corporation, trade name: AQ-2 558) was formed on the surface of the lead frame. Then, there will be: four with a side of 20mm to form a concave bottom, and a diameter of 0 · 0 7 5mm evenly arranged on both sides of the concave ^, a total of 2 2 5 to form a concave White pattern of ultraviolet light transmission at the opening of the electrode f 塾 ° 卩; 30% of the width of 1 mm of ultraviolet light at the outer peripheral portion of each concave bottom ^ concave electrode pad is transparent & color @ 案 2 6 ; And other parts are black patterns that can block ultraviolet rays

1225702-^ 92101673, --- leap year f month _ ^ V. Description of the invention (15) '--- --- The mask 24 is closely attached to it and irradiates 80 mJ of ultraviolet rays. Next, it was immersed in a sodium carbonate solution for 40 seconds to make the photoresist layer a mask for etching. Then, the surface of the exposed lead frame material = row and a half # is engraved to form a concave bottom and a concave electrode welding pad. Next, it was immersed in a sodium carbonate solution for 80 seconds to make the photoresist layer visible again to obtain a mask for electroplating. Then, the exposed surface of the lead frame material is plated with gold, and then a palladium plated layer having a thickness of 111 is provided, and a palladium plated layer having a thickness of 6 and a nickel layer and an average thickness of 11] is provided. Thereby-a lead frame for BCC. In this embodiment, 1,000 lead frames are manufactured for hours. v and t were evaluated for the same continuity test as in Example 1. As a result, they were not defective. # 实施 例 4 With reference to the continuous cross-sectional views shown in Figure 2 (A) to (G). A copper sheet material with a thickness of 0.125 mm, a width of 35 mm, and a length of 150 mm was used as the material for the lead frame, and a photoresist layer (made by Asahi Kasei Corporation, trade name: AQ-2 5 58) was provided on the surface. It is 20 mm to form a concave bottom portion, and a diameter of 0.3 mm equally arranged on both sides of the concave bottom portion, and a total of 2 to 25 pieces are used to form a pattern of an opening portion of a concave electrode pad. One part is provided with four having a side of 2 2 mm for the concave bottom, and a diameter of 0.4 mm equally arranged on both sides of the concave bottom, a total of 225 for the concave electrode pad portion. The mask alignment position of the second part of the pattern of the plating opening part is arranged in close contact with the surface of the photoresist layer. Firstly, the 80mJ ultraviolet light is exposed through the first part, and then the sheet alignment position is moved through the second part in the same area.丨 〇m J UV exposure. Correct

314355 (revised version) .ptc page 20 1225702

After the correction, the mask was removed, immersed in a sodium carbonate solution for 60 seconds, and the layers were developed. An etching layer was removed from the photoresist layer to be etched, and then the surface portion of the lead frame material was removed. Etching, ..., making recessed wafers + laps, and recessed electrode pads. The garment was then immersed in a sodium carbonate solution for 1 to 20 seconds to re-image the photoresist layer to a mask for electroplating from which the photoresist layer to be plated was removed. The surface part of the lead frame material used is gold-plated, and a palladium plated layer of ^ ^ ^ ^ m, and a nickel plated layer with a thickness of 6 // m is used as the most table drawer. 5 // m palladium plating. Thus, a BCC lead frame is formed. 9. Example: It takes 8 hours to make 1,000 lead frames. Here, the same continuity test and evaluation as in Example 1 were performed, and the results were not satisfactory. Calling brother etc. Conventional Example 2 is explained with reference to the continuous sectional views shown in Figs. 6 (A) to (I). A copper sheet wire frame material 12 with a thickness of 0.125 mm, a width of 35 mm, and a length of 150 mm is used. A photoresist layer 14 (Asahi Kasei as the guide name. AQ-2558) is provided on the surface. _ 之 ^ The concave bottom of the quotient, and the diameter equally arranged on both sides of the concave bottom 〇7 Γ 十 ΓΓΓίΛΛ to form the opening portion of the concave electrode pad portion = the first cover f 16 is closely attached to the sheet On the surface, 80 μl of ultraviolet rays were irradiated. Next, the first mask i 6 was removed, and the photoresist layer was developed by being immersed in a sodium carbonate solution to prepare a mask for etching. Then, the surface portion of the exposed material is half-finished to form a concave wafer electrode pad portion. ^ I /, concave

1225702 _ Case No. 92101673 $ year & month q amendment_ V. Description of the invention (17) Next, remove the mask for etching and set a photoresist layer on the surface of the material for the lead frame (made by Asahi Kasei Corporation, trade name: AQ-2 5 5 8), there will be provided four recessed wafer mounting portions with a side of 22 mm, and a diameter of 0.4 mm equally arranged on both sides of the recessed wafer mounting portion, for a total of 2 2 5 The second mask 18 of the pattern of the opening portion where the concave electrode pad portion is plated is closely adhered to the surface of the photoresist layer and irradiated with 80 mJ of ultraviolet rays. Next, the second mask 18 was removed and immersed in a sodium carbonate solution for 60 seconds to develop a photoresist layer to obtain a mask for electroplating. Then, the exposed surface portion of the lead frame material is subjected to gold plating, and then a palladium plated layer having a thickness of 0.1 1 // m, and a nickel plated layer having a thickness of 6 // m and an average thickness of 0.5 / / m of palladium plating. Thus, a BCC lead frame is formed. In this comparative example, it took 12 hours to manufacture 1,000 lead frames. Evaluation of the same continuity test as in Example 1 was performed, and as a result, no poor conduction occurred. (Effects of the Invention) In the method of the present invention, the photoresist layer formed at one time can be used sequentially as a mask for etching and a mask for electroplating, thereby saving operating materials. Furthermore, since the steps can be shortened, a lead frame can be provided which is cheaper than the conventional method.

314355 (Revised version) .ptc Page 22 No. 92 No. 92 Simple description of revised drawings [Simplified description of drawings] Figures 1 (A) to (d) Cross-sections of the manufacturing steps of each piece ^ The figure shows the use of the conventional lead frame The manufacturing steps of the electronic zero 2 (a) to (r-state) show the _ and scratch views of the method for manufacturing the lead frame of the present invention. Figure 3 (A) to (f _ | manufacturing steps of another state) ^ A cross-sectional view showing the manufacturing method of the lead frame of the present invention 0 丨 Another-state two (i) i is a cross-section: This: A cross-sectional view showing the manufacturing method of the lead frame. Figures (A) to (1) show the past [Description of main component symbols] of the manufacturing process of the lead frame of the photoresist layer The second mask of the photoresist layer Gray pattern wafer mounting portion of the general sensitivity 12 The material for the lead frame 16 The first mask 20 The high-sensitivity photoresist film 24 Cover 110 Electrode section 130 Semiconductor element Page 23 314355 (revised version) · ptc

Claims (1)

1225702 ML 92101673 VI. Method for manufacturing a patent for amending the year &month; Japanese-style lead frame manufacturing method, which uses the photometric method to make the first method prescribed by the first mask into a concave portion, and includes the The method of the first area is ^ 3. The second area is a lead frame for electroplating. The second area is shielding. U) The photoresist is placed on the surface of the material of the lead frame, and the surface is closely contacted with the first cover. Steps of light; ^ Youwan type exposure (3) remove the first mask, close the second mask, and perform the exposure in one pattern; the first exposure side (4) remove the second mask, Chu — Cheng For example, the first e Μ > i the first, the first, the image development method, the formation of the step-like mask made of the first resist layer, the second step, 错-two, wrong from the right Material for lead frame rods exposed from the mask for etching * Steps for lamp etching to form recesses · Wood material (6) develops in a second development method, and a mask for plating composed of a photoresist layer ; And (7) the step of electroplating from the electroplating mask, ( The lead frame out of the mask is made of a material and is subjected to the first exposure method and the second exposure method. 2. To remove the photoresist layer, use the second exposure method and the first; J resist layer remains' and by the second exposure method. First, J mode and second development mode can remove the photoresist layer .., member image-a manufacturing method of lead frame, which uses the photometric method (PWic) to make the Area borrowing 1225702 _ case number 92101673_% years? January 1st amendment_ VI. A method for manufacturing a lead frame that becomes a concave part by applying the patent scope method and plating the second area specified by the second mask in a manner that includes the first area includes: (1) in A step of providing a first photoresist layer on the surface of the material for the lead frame, and then providing a second photoresist layer having a lower sensitivity than the first photoresist layer on the first photoresist layer; (2) closely adhering the first mask on the surface to Steps of performing exposure in the first exposure mode; (3) Steps of removing the first mask, closely contacting the second mask, and performing exposure in the second exposure mode; (4) Removing the second mask, and performing the first development (5) forming a recessed portion by etching the lead frame material exposed from the etching mask, as shown in FIG. Steps; (6) a step of developing by a second developing method to form a mask for electroplating composed of a photoresist layer as a second region; and (7) for a lead frame exposed from the mask for electroplating Material is electroplated, and by the first exposure method, the second In the light mode and the first development mode, the first photoresist layer and the second photoresist layer can be removed, and the second photoresist layer is removed by the second exposure method and the first development mode, so that the first photoresist layer remains. The first photoresist layer can be removed by the second exposure method, the first development method, and the second development method. 3. —A method for manufacturing a lead frame, which is provided with light transmission by using 314355 (revised version) .ptc page 25 1225702 = -f case, the semi-transmissive second pattern, and the photometric method of the mask of the third pattern that shields the light, make the first area defined by the first pattern through transmission into a concave portion by etching, and A method for manufacturing a lead frame for electricity ore from a second region through a light pattern of a first pattern includes: (1) a step of providing a resist layer made of a positive photoresist on the surface of the material for the lead frame; (2) ) The steps of tightly masking, exposing, and removing the mask on the surface; (3) developing in the first development mode to form a mask with a surname composed of a photoresist layer as in the first region; 4) a step of forming a concave portion by etching the lead frame exposed from the etching mask; / (5) developing in a second development mode to form, for example, a second region composed of a photoresist layer The step of plating for the electroplating; and (6) the step of electroplating the lead frame exposed from the electroplating mask; Remove the photoresist layer, use the exposure to the second area and the first photoresist layer to remain, # 由 对The exposure of the second area, the first development j, and the first development mode can remove the photoresist layer, and the third area of the photoresist layer will remain. 1. A method for manufacturing a lead frame, which uses a photometric method of a mask having a translucent, translucent second pattern and a third pattern that shields light. 3 patterns that block light Page 26 314355 (Revision 1225702) , 3 areas are engraved with a surname & become a concave shape, and the second area is a lead frame for electricity mining. The resistance layer Γ is made of a material with a negative photoresist (2) on the surface. The steps of masking, exposing, and removing the mask; (3) the step of developing by the first developing method to form a mask for etching, such as the third region, made of a photoresist layer; (4) by comparing with The lead frame exposed by the mask is etched to form a recessed portion; the material (5) is developed in a second development mode to form a mask for electroplating, such as a second area, formed of a photoresist layer. And (3) (6) the step of plating the lead frame material exposed from the plating mask, and / or performing and removing the photoresist layer by the first development method, and exposing the area with the first The one-image development mode makes the photoresist layer remain, and the second photoresist layer can be removed by the exposure of two areas, the first development mode, and the second development mode, and by the exposure of the first area and the first development In the division and second development mode, the photoresist layer is left. "Method 5. Crazy ▼ Bing Low Yixin shipments, you use a photometric method with the mask of the first part. The first area specified by the first part of the mask is made by etching. Method for manufacturing a lead frame by cutting and defining the second portion so as to include the first region, and plating the region, including the first region 314355 (Revised). Ptc Page 27 1225702 MM 92101673, the scope of patent application 丨 = the step of providing a photoresist layer on the surface of the wire frame material; (2) the step of exposing the surface to a close mask; using the first exposure method 2) 3) close the mask on the first area The second part is a step of exposing in a light manner; a first to an exposure (4) a step of developing in a first developing mode to form a mask for etching such as a first resist layer; °. Or, MH is a step of etching the lead frame exposed from the etching mask with # 4 to form a concave portion; developing with the material (6) in the second development mode, and forming A step of plating a mask made of a photoresist layer; and ° or the electric key The lead frame material exposed by the electric material is carried out and the photoresist layer is removed by the first exposure method, the second exposure method, and the ru, and the second exposure method and the first-display , And by the second exposure method, the first-display! 6 > The first development method can remove the photoresist layer. 2 A method for manufacturing a lead frame, which uses a photometric method of a mask in which a first Γ and 22 parts are juxtaposed, so that the first area defined by scooping into the 卩 ° points is borrowed. The etching method becomes a concave portion, and the method of the first region defines the second part of the method of manufacturing the electrically forged lead frame according to the second part, including: a step of providing a photoresist layer on the surface of the material for the lead frame; 2) Step _, the step of exposing the mask to the surface; 1225702 _ Case No. 92101673_1 ^ year g "____ Sixth, the scope of patent application (3) The second part of the mask is tightly sealed in the first area, and the first part of the mask is closely contacted with another material of the lead frame by moving the mask The surface part is exposed, and the steps of exposure are sequentially performed in this way; (4) the step of developing in the first developing mode to form a mask for etching as a photoresist layer in the first region, (5) A step of forming a concave portion by etching the lead frame material exposed from the mask with the remaining moment; and the material line (6) is developed in a second development mode to form a second region formed by a photoresist layer The step of forming a mask for electroplating; and 3 (7) a step of removing the material for the lead frame and the power ore exposed from the mask for electroplating, and removing it by two exposures and the first development In the method, the layer can be removed, and the photoresist layer can be left by one exposure and the first development mode. The photoresist layer can be removed by one exposure, the first development mode, and the second development mode. For example, the manufacturing method of the lead frame of the patent application No. 6 is a photoresist layer that is insensitive to light when it is adjacent to or near the etching area and the plating area. War exposure 314355 (revised) ptc page 29