201236051 六、發明說明： 【發明所屬之技術領域】 屬層 【先前技術】 在具有導躲基板的—録面上，作成已施作特定圖案 的光阻鮮（resist mask)，縣_糊露㈣的基板上， 將導電性金屬作電沉積（eleetnxlepQsitiGn)，作成供半導 體元件裝載用金屬層與外部連接用的電極層，藉由除去光阻 遮罩’作辭⑽元件裝_紐；在前辭導體元件裝載 用基板上裝載半導體树，打線接合後，進行樹脂封裝，除 去基板’得_半導體裝置係使電沉積在樹脂這-側的導電 性金屬之背面娜妹，方紅為人所知。 ,在特開2002-9196號公報令，揭示：藉由越過己作成( =阻遮罩’使導電性金屬產生電沉積，所得觸半導體心 裝载用基板’在供料體元舰_金朗斜部連接心 電極層上端部位的周邊緣具有突出部份，樹脂封裝之際，^ 樹脂這—測’癌實殘留有變成樹脂侵雜形（encroac^ ^ 金屬.層知電極層的突出部份。 在特開2007-103450號公報中，揭示：形成光阻遮罩j 牙' 使用散射紫外線（scatter ultravicilet)，將光阻遮; 作成梯形（ti*apez〇id)，❿將金屬層或電極層作成_形 201236051 ，·· (inverted trapezoid)。 . : ··. 【發X容】 〆· 【發明所要解決之問題】 ^ 特開2002-9196號公報中所揭示之越過光阻遮罩使導電 f生金屬發生電沉積的方法，係使光阻遮罩懸垂（〇verhang) 作成的鍍金屬層而形成，控制此懸垂量十分困難，因此產生 作成的鑛合屬層無法全部有相同簷長度（eaves length)的 問題；也有與相鄰的鍍金屬層連結後的問題。又，因為鍍金 屬層變薄則突出部份的厚度也變薄，因此也還有與樹脂的黏 合性降低的問題。目此’被騎⑽金騎社表面，由於 鍍金屬的縱向和橫向的生長比侧係，魏雜，也變成使 接合打線的可靠性降低的主要原因。 ，又，特開2007-103450號公報所揭示之方法：使用散射 紫外線、使光阻層開口部位的剖面形狀作成‘形的、.方法，所 使用的光阻的厚度在25微米（_)程度是有效的、形成 的金屬層或電極層的厚度則成為20微米程度；舉例來說，光 F且層若是作成50微米程度的厚度時，因為紫.外線被光阻吸 收’射向基材方向的光就逐漸減衰，開口部位别面形狀的梯 形角度變的接近90度《亦即，長方形》，甚至變的比這個更 大域肩又的梯形’由於金屬層或電極層的形狀不能成為 倒梯形’金屬層或電極層與樹脂的黏合性就降低。 201236051 马了使電極層與樹脂的黏合性更加提高，將電極層的厚 度加厚’並且作成可以吞人麟的倒獅，是極有效的U;也 就是况，使料極層厚度可以_25微米以上厚度的光阻也 可以作成倒梯形的光阻層，因此，就可以製造用5〜謂微米 程度的厚度的電極層《於後述，形成鏟金屬層10的那-側》 形成倒梯形所作成料導體元件裝·基板。 有鐘於前述各項問題’因此產生本發明之半導體元件裝 載用基板的製造方法，藉由將電極層作成倒梯形，可以提供 電極廢和樹脂的黏合性提高的半導體元件裝載用基板，此為 本發明之目的。 【解決問題所採去的方法】 本發明之半導體元件裝載用基板的製造方法，係：金屬 板的表面上，藉由感光波長不_恤，形成上層和 ==3^層之《;及前述下層先阻料未曝输 Γ 層轉錢轉光的健；及在前述上 曰先阻層之特定圖案處形成 氺沾乂、+、τθ 丨位攸该開口部位，未曝 光的則4下層光阻層，於前述上層光阻層的圖案處，鬥 口部位，使前述金屬板表面有一部 二 " 詩〜… 切顯路出來的顯影作業； =使^下層光阻層曝光、i更化的作業；及在前述下 層顯路出麵_金屬板表面± ^ 鞏；及脾Α、+、τθ 成寺疋的鍍金屬層的作 業’及將衛層和上層所構成的2層的光阻層完全剝落分 201236051 離的作業；依此順序進行作為其特徵的方法。 兑又，本發明之半導體元件裝載用基板的製造方法中，關 於月】述顯衫作業’係靠著自前述上層光阻層的前述開口部位 推動前述下層光阻層進行顯影，在前述金屬板表^，有一 部份顯露出來，形成開口部位，此開口部㈣剖面形成倒 梯形’則較合於理想。 又’本發明之半導體元件裝制基板哺造方法中，前 述下層光阻層’係比其後作針卿成的前频金屬的高度 更厚的層，則較合於理想。 又’本發明之半導體元件裝制基板的製造方法中，在 光源與特定_及作成的料之間，經過濾波器油时）， 用所需要波長的光，使前述上層光阻層曝光，則較合於理想。 【發明之成果】 域本發明之半導體赫輯縣㈣製造方法 ，由於 大致上承襲過去的作業,，作成倒梯形的剖面形狀的鑛金屬 曰f以很谷易地彳于到與樹脂黏合性極優的半導體元件裝載 用基板。 【實施方式】 其-人關1和圖2為基礎，說明本發明之半導體元件 裝載用基板的製造方法的實施型態。 201236051 首先’如圖1⑴所示’在其後作業中作成的鍍金屬層1〇 的金屬板20的表面上，作出比鏟金屬層10所必需高度更高 的厚度的下層的光阻層30,此光阻層3G係藉由i線❹線或 g線而感光的雜層’成為下層的細層3G的厚度預先作成 這樣，因此可以確實作成剖面為倒梯形形狀所必需高度的鍍 金屬層10。 其次，如圖1(2)所示，在其上作成與先前已作成的下層 光阻層30感光波長不同的上層所形成之光阻層4〇。 ，其次’如圖1⑶所示，使用具有特定圖案的遮罩5〇，上 層光阻層40以特定圖案曝光；此時，下層光阻層3〇係未曝 光的狀態。該上層光阻層40曝光之際，相對於水銀燈的光源， 使用只通過必需波長的帶賴波器6G，就可以使下層光阻層 30為未曝光狀態，而上層光阻層40曝光。 其次，如圖1(4)所示，進行顯影，在上層光阻層41的特 定圖案處形成開口部位，未曝光的下層光阻層3ι，從上層光 阻層4!的開π部位推賴影，使金屬板2()的表面有一部曰份 顯露出來。 經過這種處理，下層光阻層31之剖面變成倒梯形形狀的 開口部位。再者，所謂倒梯形形狀，係指比起底邊《與金屬 板20銜接之側》，上方邊之長度較長的梯形形狀。 此處，使用圖2，詳細說明前述圖i⑷的下層光阻層幻 作成倒梯形的剖面形狀的顯影作業之細節。 ^ 201236051 顯影作業中，如圖2⑴所 阳日> 丁百先，形成來自於上層光 二1:觸下層的光阻廣3。;因此，如_所示’顯 衫液80^動，使光阻層3〇 + 门下方被除去，同時顯影液80也 ° ^動因此’如圖2(3)所示’顯影液80形成渦卷狀 ^ )的流動，光阻層3G被除去，其剖面變成圓弧狀； 々圖2(4)所不’光阻層3Q使金屬板20露出，顯影夜 8〇除去橫方向的光阻層3G。其結果，如圖2⑸所示，作成剖 面形狀變成倒梯形的開口部位的光阻層3ι。 其次，如圖1⑸所示，未曝光的下層的光阻層31全面曝 光’使其硬化。 其次’如圖1(6)所示，露出的金屬板'2〇的表面上，進行 鍍金屬前處理，作成必要高度的鍍金屬層1〇。 最後’如圖1(7)所示，藉由除去全部的光阻層31、41， 可以彳于到在金屬板2〇的表面上具有倒梯形的剖面形狀之鍍金 屬層i0的半導體元件裝載用基板。 再者，不使用水銀燈作為光源，使用特定波長的紫外線 發光二極體燈作為光源；沒有使用帶通濾波器，也可以使上 層的光阻層曝光。 ： 【實施例1】 使用厚度為0.15毫米（麵）的SUS430作為金屬板2〇， 201236051 在-们表面上’覆蓋厚度5Q微米的細光阻（Mm⑽土对) 《旭化成E—_erials製造之終5038》的薄；U laminate)， 作成光阻層30。覆蓋薄片的條件，係在滾筒溫度職、滾 筒壓力0· 5百萬帕（MPa; m賢）、送入速度每分鐘& 5 米（m/nrni)下進行。再者，薄片覆蓋後的薄膜光阻係負型 光阻（negative type resist)，係藉由i線照射《感光波長： 365奈米（ηπ〇》可以曝光的光阻。 其次，只有在作成前述光阻層3〇的金屬板的表面這一側 《該側其後會作成鍍金屬層1G》，使用·感光波長與厚度％微 米之光阻層30不同的薄膜光阻《旭化成E_materiais製造之 ADH-252》，在與前述相同條件下，覆蓋薄片，重疊於前述光 阻層30上，作成上層的光阻層4()。此薄膜光阻也是負型光 阻，係藉由h線照射《感歧長：棚奈米（nm)>可以曝光 的光阻。 至此’在金屬板20的表面側，作成感級長不同的二層 光阻層30、40 ;而在背面側，則作成與表面側之下層柑同的 光阻層30。 然後，在表面側的上層光阻層4〇的表面上，蓋上以特定 圖案做成的遮罩50，該遮罩5〇與曝光用光源之間，設置4〇5 奈米的帶通濾波器60。 然後’使用包含主波長i線及h線、g線的混合光線7〇 的水銀燈《OAK製造之短電弧燈（sh〇rt arc iamp)》，進行曝 201236051 光’表面側的上層光阻層4〇藉由杨奈求紫外線，使特定圖 案處感光並硬化，而背面側藉由_光源，使光阻層30全面 感光並硬化。 此時’表面側，由於有405奈米的帶通濾波器6〇，以匕 線71照射進行曝光，下層的光阻層30係未曝光的狀態。1 背面側，^為混合光線70而曝光，變成全面硬化的光阻層31。 其次是進行顯影’表面側的上層光阻層4〇形成特定的圖 變成作成開口部位的光阻層4卜絲，未曝光的下層光 層。0攸上層光阻層41的開口部位推進顯影，使金屬板表 ，顯露出來。藉由此處理，表蝴的下層細㈣變成剖面 ^大為倒梯形的開口部位。此顯影處理係以1%碳酸納溶液， 3Gt、喷霧壓力G肩百萬帕_，約8〇秒時間進 部曝光使其硬化 然後’在表面側上，從特定圖案處形成開口部位嶋 ^斤捕出來的金屬板2G表面，經過去除表面氧化皮思 屬前處理，進行表面活化性處理後，實施_， 乍成厚度為4G微米的鍍金屬層1()。' ^藉由鹼性溶液，使金屬板2Q喊面上所形編 ^全部贿分哩，得鮮導體元件«用基板。 斤作成的剖面為倒梯形形狀的錢金屬層10的斜 201236051 邊，與金屬板的角度係75〜80度。 本實施例，在金屬板2〇的背面側，藉由i線照射而作成 可以曝光的絲層30，軸使用含有i線和h線和g線的混 合光線的水紐作為麟、，但此並沒有限必要；如果與 上層光阻層40的感光波長不同的話，作成任何類型的光阻層 都可以。再者，在背面侧形成的光阻層，因為使其全部硬化， 使用任何類型的光阻層都沒有問題。 又’作成的鍍金屬層’層疊複數的鍍金屬也可以，因應 需要，也可以選擇金、絶（Palladium)、錄、銅、銘（c〇balt) 等及它們的合金的鑛金屬，順次層疊作成鍍金屬層。 【實施例2】 使用厚度為0.15毫米的的SUS430作為金屬板2〇，在表 面側《其後形成鍍金屬層1〇之側》上，覆蓋2片厚度38微 米的薄膜光阻（film resist)《旭化成E-materials製造之 AQ-4096》的薄片（laminate)，背面側覆蓋1片相同的薄片， 作成在表面側的76微米厚度的下層光阻層30。覆蓋薄片的條 件，係在滾筒溫度l〇5°C、滾筒壓力〇. 5百萬帕（MPa ; mega-Pascal)、送入速度每分鐘2. 5米（m/min)下進行。 然後’在金屬板20的表面側之前述光阻層30上，層疊厚度 25微米的薄膜光阻《旭化成E-materials製造之ADH-252》， 於與前述相同條件下覆蓋薄膜，作成在表面側的上層光阻層 201236051 40。 然後，在表_壯層光_ 4G的表面上，使用以特定 圖案做成的遮罩50，藉由h線照射，實施曝光；背面側係全 部曝光’而表面側的上層練層4G以特定_使其硬化，背 面側的光阻層30使其全部硬化。曝光方法與實施例1相同， 光源使用水銀燈，在表關，因為光源與鱗之間設置了 405 奈米的帶魏波器，只有h線能通過。此時，表面側的下層 光阻層30係未曝光的狀態。 接下來’進行顯影’在表面側的上層光阻層仙作成特定 圖案處開口部位，形成光阻㈣。然後，未曝光的下層光阻 ^ 30，從上層光阻層41的開口部位推進顯影，使金屬板表面 .捕出來。經過此處理，下層光阻層31變成剖面形狀為倒梯 形的開口部位。具體的條件係：以1%碳酸納溶液，在液溫 航、喷霧壓力08百萬帕㈣），顯影處_0秒時間 進行。 然後’對於表_的下層光阻層31，藉由水銀燈，進行 全部曝光，變成剖面為倒梯形形狀的開口部位，使下層光阻 職硬化。嶋输有前繼_嶋下魏— 般的曝光。 「 圖案作成的光阻層31所顯露出來的金屬板 的表面’精由-般錄金屬前處理，進行表面 依照厚度输叫米、舰微米、鍍錄二二， 201236051 敝〇. 1微米、鑛金0· 8微米的順序，依次實施，作成鑛金 屬層10。 其後’用驗溶液將金屬板20的兩側已作成的光阻層31、 41全部半導體元艦輯絲板。.： 所作成的麻關獅做_麵層1() 板2〇的角度係65〜78度。 …屬 【圖式簡單說明】 圖1係顯示本發明之半導體树裝載用基板的製造方法的各 作業之圖。⑴係金屬板的兩面上作成光阻層的剖面圖；⑵ 係在表面的側上’作成與先前已域的光_的感光波 長不同的光阻層的剖面圖；⑶係在曝光作業中，表面的這— 側有特疋的料’在覆蓋光源（未顯示於® t) *遮罩之門 設置帶通渡波器（band—_ filter) ’為了來自統_卜 線麟上層光阻層曝S，照射必要波長的紫外線，而背面這 ，全部曝光的剖_;⑷係進行顯影，在上層光阻層，於 特定圖案處作朗口部位，未曝光的下層光阻層，從上Μ光 阻層的開口部位，進行推動顯影，使金屬板表面有—部料 露出來的剖面圖，藉由此種處理，下層光阻層，其剖面形狀 ^成觸形的開㈣位。⑸絲賴未曝光的下層光阻層曝 光後’使其硬化的剖關；⑹係顯示在顯露出來的金屬板表 面上作成鍍金屬層的剖關；⑺係將絲層㈣分離，在金 201236051 元件裝載用基板 的刮面 屬板表面上作成鑛金屬層的半導體 圖。 面形狀的顯 圖2係圖1(4)所示之下層光阻層作成倒梯形的剖 影作業之詳細說明圖。 【主要元件符號說明】 1〇 鍍金屬層 20 金屬板 30 覆蓋在金屬板的薄片、形成下層的光阻層 31 光阻層30經過顯影形成特定圖案的光阻層 40 形成在光阻層30上、作成上層的光阻層 41 光阻層40經過顯影形成特定圖案的光阻層 50 遮罩 60 帶通濾波器 70 紫外線 71 通過帶通/慮波器的特定波長的紫外線 80 顯影液 14201236051 VI. Description of the invention: [Technical field to which the invention pertains] A genus layer [Prior Art] A resist mask that has been applied to a specific pattern is formed on a recording surface having a substrate to be occluded, and the county _ paste (4) On the substrate, a conductive metal is electrodeposited (electroetnxlepQsitiGn) to form an electrode layer for connecting the metal layer for mounting the semiconductor element to the outside, and the photoresist mask is removed by the word "10". A semiconductor tree is mounted on a substrate for mounting a conductor element, and after being bonded by wire bonding, the substrate is removed, and the substrate is removed. The semiconductor device is a back surface of a conductive metal electrodeposited on the resin side. In Japanese Patent Laid-Open Publication No. 2002-9196, it is disclosed that: by making an over-made (=resistance mask to cause electrodeposition of a conductive metal, the resulting contact semiconductor core loading substrate is used in the supply body ship_金朗The peripheral edge of the upper end portion of the oblique portion connecting the core electrode layer has a protruding portion, and when the resin is packaged, the resin is measured as a resin intrusive shape (encroac^^ metal. The protruding portion of the electrode layer) In Japanese Laid-Open Patent Publication No. 2007-103450, it is disclosed that: a photoresist mask is formed to use a scatter ultravicilet to block a photoresist; a trapezoid (ti*apez〇id) is formed, and a metal layer or an electrode is formed. The layer is made into _ shape 201236051,··· (inverted trapezoid). : :·. 【发发容】 〆· [Problems to be solved by the invention] ^ The crossing of the photoresist mask is disclosed in Japanese Laid-Open Patent Publication No. 2002-9196. The method of electrodepositing the conductive f-metal is formed by forming a metallization layer of the photoresist mask overhang, and it is very difficult to control the amount of the suspension. Therefore, the produced mineral layer cannot have the same length. (eaves length) problem; there are also The problem that the adjacent metal plating layers are connected. Moreover, since the thickness of the protruding portion is also thinned as the metal plating layer is thinned, there is also a problem that the adhesion to the resin is lowered. Therefore, the horse is riding (10) On the surface of the company, the growth of the metallization in the longitudinal direction and the lateral direction is the main reason for the decrease in the reliability of the bonding wire. Moreover, the method disclosed in Japanese Laid-Open Patent Publication No. 2007-103450 uses ultraviolet light scattering. The cross-sectional shape of the opening portion of the photoresist layer is formed into a 'shape. The thickness of the photoresist used is effective at a level of 25 μm (_), and the thickness of the formed metal layer or electrode layer is 20 μm. For example, if the light F and the layer are made to a thickness of about 50 micrometers, the light emitted by the photoresist is gradually reduced due to the absorption of the photoresist by the photoresist, and the trapezoidal angle of the shape of the opening portion becomes close to 90. Degree "that is, rectangular", even changed to a larger trapezoidal shape than this one. Because the shape of the metal layer or the electrode layer cannot be an inverted trapezoidal metal layer or the adhesion of the electrode layer to the resin is lowered. 01236051 The horse has improved the adhesion between the electrode layer and the resin, thickened the thickness of the electrode layer, and made a lion that can be swallowed. It is extremely effective U; that is, the thickness of the material layer can be _25. The photoresist having a thickness of a micron or more can also be formed as an inverted trapezoidal photoresist layer. Therefore, it is possible to manufacture an electrode layer having a thickness of about 5 to a micron, which is formed on the side of the shovel metal layer 10, which will be described later. In order to produce the semiconductor element mounting substrate of the present invention, the electrode layer can be provided with an inverted trapezoid, thereby providing an improvement in adhesion between the electrode waste and the resin. The substrate for mounting a semiconductor element is the object of the present invention. [Method for Solving the Problem] The method for manufacturing a substrate for mounting a semiconductor element according to the present invention is a method of forming an upper layer and a layer of ==3^ on a surface of a metal plate by a photosensitive wavelength; The lower layer firstly blocks the material and does not expose the layer to turn the money and turns the light; and in the specific pattern of the first layer of the upper layer, the 氺 乂, +, τθ 丨 position is formed in the opening portion, and the unexposed layer 4 ray is formed. a resist layer, at the pattern of the upper photoresist layer, the mouth portion, so that the surface of the metal plate has a second " poetry ... ... the development work of the road; = the lower layer of the photoresist layer is exposed, i is more The operation of the lower layer of the surface of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The layer completely peels off the work of 201236051; in this order, the method is characterized. Further, in the method for producing a semiconductor element mounting substrate of the present invention, the lower layer photoresist layer is pushed by the opening portion of the upper photoresist layer to develop the metal sheet. Table ^, a part of it is revealed, forming an opening portion, and the opening portion (four) is formed into an inverted trapezoidal shape, which is more desirable. Further, in the method of feeding a semiconductor element-mounted substrate of the present invention, the lower-layer photoresist layer is more preferable than the layer having a higher thickness of the front-frequency metal formed later. Further, in the method for producing a semiconductor element mounted substrate of the present invention, when the light source and the specific material and the material to be produced are passed through the filter oil, the upper photoresist layer is exposed by light of a desired wavelength. More ideal than ideal. [Effects of the Invention] In the semiconductor manufacturing method of the Hei County (IV) of the present invention, the ore metal 曰f which is formed into an inverted trapezoidal cross-sectional shape is highly entangled with the resin. Excellent substrate for mounting semiconductor components. [Embodiment] The embodiment of the method for manufacturing a substrate for mounting a semiconductor element of the present invention will be described based on the above-mentioned aspects and Fig. 2 . 201236051 First, as shown in Fig. 1 (1), on the surface of the metal plate 20 of the metallization layer 1 which is formed in the subsequent operation, a lower photoresist layer 30 having a thickness higher than the height necessary for the shovel metal layer 10 is formed, The photoresist layer 3G is formed such that the thickness of the thin layer 3G which is formed by the i-line or the g-line is the thickness of the lower layer 3G. Therefore, the metal plating layer 10 having the height necessary for the inverted trapezoidal shape can be surely formed. . Next, as shown in Fig. 1 (2), a photoresist layer 4 formed on the upper layer having a different wavelength from that of the previously formed lower photoresist layer 30 is formed. Next, as shown in Fig. 1 (3), the upper photoresist layer 40 is exposed in a specific pattern using a mask 5 having a specific pattern; at this time, the lower photoresist layer 3 is in an unexposed state. When the upper photoresist layer 40 is exposed, the lower photoresist layer 30 can be exposed to the unexposed state, and the upper photoresist layer 40 can be exposed, with respect to the light source of the mercury lamp, using the band-passing device 6G which only passes the necessary wavelength. Next, as shown in Fig. 1 (4), development is performed to form an opening portion at a specific pattern of the upper photoresist layer 41, and the unexposed lower photoresist layer 3i is deviated from the open π portion of the upper photoresist layer 4! Shadow, a part of the surface of the metal plate 2 () is revealed. After this treatment, the cross section of the lower photoresist layer 31 becomes an opening portion of an inverted trapezoidal shape. In addition, the inverted trapezoidal shape refers to a trapezoidal shape in which the length of the upper side is longer than that of the side "the side joined to the metal plate 20". Here, the details of the development operation of the lower layer photoresist layer of the above-described Fig. i (4) which is morphed into an inverted trapezoidal cross-sectional shape will be described in detail using Fig. 2 . ^ 201236051 In the development operation, as shown in Fig. 2(1), Yang Ri > Ding Baixian, formed from the upper layer of light 2: the touchdown layer has a wide resistance of 3. Therefore, as shown in the figure _, the liquid layer 80 is moved, so that the photoresist layer 3 〇 + is removed under the door, and the developer 80 is also moved. Therefore, 'the developer 80 is formed as shown in FIG. 2 (3). In the flow of the spiral shape, the photoresist layer 3G is removed, and the cross section thereof becomes an arc shape; FIG. 2(4) does not expose the metal plate 20 by the photoresist layer 3Q, and the horizontal light is removed at 8 显影 night. Resistance layer 3G. As a result, as shown in Fig. 2 (5), a photoresist layer 3ι having an opening portion having an inverted trapezoidal shape is formed. Next, as shown in Fig. 1 (5), the unexposed lower photoresist layer 31 is fully exposed to be hardened. Next, as shown in Fig. 1 (6), the surface of the exposed metal plate '2' is subjected to metallization pretreatment to form a metal plating layer 1 of a necessary height. Finally, as shown in Fig. 1 (7), by removing all of the photoresist layers 31, 41, it is possible to load the semiconductor element to the metallization layer i0 having an inverted trapezoidal cross-sectional shape on the surface of the metal plate 2A. Use a substrate. Further, instead of using a mercury lamp as a light source, an ultraviolet light-emitting diode lamp of a specific wavelength is used as a light source; instead of using a band pass filter, the upper photoresist layer can be exposed. [Example 1] SUS430 having a thickness of 0.15 mm (face) was used as the metal plate 2〇, 201236051. On the surface of the surface, 'thickness of 5Q micron was covered (Mm(10) soil pair). The end of the manufacturing of Asahi Kasei E-_erials 5038" thin; U laminate), made of photoresist layer 30. The conditions for covering the sheet were carried out at a temperature of the drum, a roller pressure of 0.5 MPa (MPa; m xian), and a feed rate of 5 m (m/nrni) per minute. Furthermore, the negative-type resist of the thin film after the sheet is covered is irradiated by the i-ray "photosensitive wavelength: 365 nm (ηπ〇) can be exposed to light. Secondly, only in the foregoing On the side of the surface of the metal plate of the photoresist layer 3, "the side will be formed as a metallization layer 1G", and the film photoresist having a different wavelength from the photoresist layer 30 having a thickness of a micrometer is used. "ADH manufactured by Asahi Kasei E_materiais" -252", under the same conditions as above, the cover sheet is overlaid on the photoresist layer 30 to form an upper photoresist layer 4 (). The thin film photoresist is also a negative photoresist, which is irradiated by h lines. Long sensation: shed nanometer (nm)> photoresist that can be exposed. So far, on the surface side of the metal plate 20, two layers of photoresist layers 30 and 40 having different levels of sensitivity are formed; on the back side, a photoresist layer 30 having a citrus layer on the surface side. Then, on the surface of the upper photoresist layer 4 on the surface side, a mask 50 made of a specific pattern is attached to the mask 5 and the light source for exposure. Between, set a 4 〇 5 nm bandpass filter 60. Then 'use the main wave I-line and h-line, g-line mixed light 7〇 mercury lamp "short arc lamp (O〇) made by OAK, exposed to the upper layer of the photoresist layer on the surface side of the 201236051 light by Yang Naiqi Ultraviolet rays make the specific pattern sensitized and hardened, while the back side is fully sensitized and hardened by the light source. At this time, the surface side has a 405 nm bandpass filter 6〇 71 is irradiated for exposure, and the lower photoresist layer 30 is in an unexposed state. 1 The back side is exposed to the mixed light 70 to become a fully cured photoresist layer 31. Next, the upper side photoresist layer on the surface side is developed. 4. The specific pattern is formed into a photoresist layer 4 which is an opening portion, and an unexposed lower layer. The opening portion of the upper photoresist layer 41 is developed and the metal plate is exposed. The lower layer of the butterfly (4) becomes the opening part of the section ^largely inverted trapezoid. The development treatment is performed by 1% sodium carbonate solution, 3Gt, spray pressure G shoulder MPa, and about 8 sec. It hardens and then 'on the surface side, shaped from a specific pattern The surface of the 2G metal plate that has been taken into the opening portion is subjected to surface activating treatment after the surface is removed, and then subjected to surface activating treatment to form a metallized layer 1 () having a thickness of 4 Gm. By means of an alkaline solution, the metal plate 2Q is shouted on the surface and all the bribes are distributed, and the fresh conductor element «uses the substrate. The cross section made of the inverted trapezoidal shape of the money metal layer 10 is inclined 201236051, with metal The angle of the plate is 75 to 80 degrees. In this embodiment, on the back side of the metal plate 2, an exposed wire layer 30 is formed by i-ray irradiation, and the axis uses a mixed light containing an i line, an h line, and a g line. The water is used as a lining, but this is not limited; if it is different from the photosensitive wavelength of the upper photoresist layer 40, any type of photoresist layer can be formed. Further, the photoresist layer formed on the back side has no problem in using any type of photoresist layer because it is hardened. In addition, the "metallization layer to be formed" may be laminated with a plurality of metal plating materials, and if necessary, a metal such as gold, Palladium, copper, copper, or the like may be selected and sequentially laminated. Made of a metallized layer. [Example 2] SUS430 having a thickness of 0.15 mm was used as a metal plate 2, and on the surface side, "the side on which the metallized layer 1 is formed later", two film resists having a thickness of 38 μm were covered. The laminate of "AQ-4096 manufactured by Asahi Kasei E-materials" was covered with the same sheet on the back side to form a lower photoresist layer 30 having a thickness of 76 μm on the surface side. The conditions for covering the sheet were carried out at a drum temperature of l 〇 5 ° C, a drum pressure of 百万 5 MPa (MPa; mega-Pascal), and a feed rate of 2. 5 m (m/min) per minute. Then, on the photoresist layer 30 on the surface side of the metal plate 20, a film photoresist of a thickness of 25 μm, ADH-252 manufactured by Asahi Kasei E-materials, was laminated, and the film was covered under the same conditions as described above to be formed on the surface side. Upper photoresist layer 201236051 40. Then, on the surface of the table _ _ _ _ 4G, a mask 50 made of a specific pattern is used, and exposure is performed by h-ray irradiation; the back side is entirely exposed' and the upper side layer 4G of the surface side is specified. _ hardens it, and the photoresist layer 30 on the back side hardens it all. The exposure method is the same as that in the first embodiment. The light source uses a mercury lamp, and the surface is turned off. Because the 405 nm belt is provided between the light source and the scale, only the h line can pass. At this time, the lower photoresist layer 30 on the surface side is in an unexposed state. Next, the "development" is performed on the surface of the upper photoresist layer to form an opening portion at a specific pattern to form a photoresist (4). Then, the unexposed lower layer resist 30 is advanced from the opening portion of the upper photoresist layer 41 to trap the surface of the metal plate. Through this treatment, the lower photoresist layer 31 becomes an opening portion having an inverted trapezoidal shape. The specific conditions are as follows: 1% sodium carbonate solution, liquid temperature, spray pressure 08 MPa (four)), development time _0 seconds. Then, the lower photoresist layer 31 of the watch sheet is entirely exposed by a mercury lamp to form an opening portion having an inverted trapezoidal shape, and the lower layer resist is hardened. There is a pre-existing _ under the Wei-like exposure. "The surface of the metal plate exposed by the patterned photoresist layer 31 is precisely processed by the pre-recorded metal, and the surface is converted according to the thickness of the meter, the ship micron, and the plated two, 201236051 敝〇. 1 micron, mine The sequence of gold 0.8 μm is sequentially carried out to form the ore-forming metal layer 10. Thereafter, the photoresist layers 31 and 41 which have been formed on both sides of the metal plate 20 are all used to test the solution. The angle of the 麻 层 1 1 ) 板 ( ( 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图Fig. (1) is a cross-sectional view showing a photoresist layer on both sides of a metal plate; (2) a cross-sectional view on the side of the surface to form a photoresist layer different from the wavelength of the light of the previously-existing light; (3) in the exposure operation In the middle of the surface, there is a special material on the side of the covered light source (not shown in the ® t). * The gate of the mask is provided with a band-pass filter (band__ filter) 'for the upper layer of the photoresist The layer is exposed to S, and the ultraviolet rays of the necessary wavelength are irradiated, and the back surface is the cross section of the entire exposure. (4) developing, in the upper photoresist layer, at the specific pattern, the unexposed lower photoresist layer, from the opening portion of the upper photoresist layer, to promote the development, so that the surface of the metal plate has a material The exposed cross-sectional view, by the treatment, the lower-layer photoresist layer has a cross-sectional shape that is in a touched open (four) position. (5) The uncoated exposed lower photoresist layer is exposed to 'harden the cross section; (6) The system shows a metallization layer on the surface of the exposed metal plate; (7) separates the wire layer (4), and forms a semiconductor pattern of the ore metal layer on the surface of the scraped surface plate of the element mounting substrate of the gold 201236051. Figure 2 is a detailed illustration of the undercut operation of the underlying photoresist layer shown in Figure 1 (4). [Main component symbol description] 1 〇 metallized layer 20 Metal plate 30 Covered sheet of metal plate The photoresist layer 30 is formed to form a lower layer. The photoresist layer 40 is developed to form a specific pattern. The photoresist layer 40 is formed on the photoresist layer 30 to form an upper photoresist layer. The photoresist layer 40 is developed to form a specific pattern of the photoresist layer. 50 mask 60 band pass filter Ultraviolet light of a specific wavelength band pass / consider the wave UV 7180 70 14 developer