CN108269736B - Method for patterning electrode layer by photoresist stripping - Google Patents
Method for patterning electrode layer by photoresist stripping Download PDFInfo
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- CN108269736B CN108269736B CN201810074903.2A CN201810074903A CN108269736B CN 108269736 B CN108269736 B CN 108269736B CN 201810074903 A CN201810074903 A CN 201810074903A CN 108269736 B CN108269736 B CN 108269736B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0331—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers for lift-off processes
Abstract
The invention provides a method for realizing electrode layer patterning by light resistance stripping, which comprises the steps of continuously coating a lower light resistance layer and an upper light resistance layer with different cross-linking performances on a substrate to form a light resistance layer, then using a half-tone photomask to expose and develop the light resistance layer, removing the light resistance layer in a second light resistance area and reserving the light resistance layer in a first light resistance area, then depositing an electrode layer, finally stripping the upper light resistance layer and the lower light resistance layer in the first light resistance area, and simultaneously removing part of the electrode layer deposited on the upper light resistance layer in the first light resistance area to obtain a patterned electrode layer.
Description
Technical Field
The invention relates to the field of display panel manufacturing processes, in particular to a method for realizing electrode layer patterning through photoresist stripping.
Background
With the development of Display technology, flat panel Display devices such as Liquid Crystal Display (LCD) panels and Organic Light Emitting Diode (OLED) panels have become mainstream products in the market.
LCD display panels have many advantages such as thin body, power saving, no radiation, etc., and are widely used, for example: a liquid crystal television, a smart phone, a digital camera, a tablet computer, a computer screen, or a notebook computer screen, etc. Compared with the LCD display panel, the OLED display panel has the advantages of being thinner, wider in visual angle, capable of actively emitting light, continuously adjustable in light emitting color, faster in response speed, high in light emitting efficiency, capable of flexibly displaying and the like.
A Thin Film Transistor Array Substrate (TFT Array Substrate) is an important component of an OLED display panel and an LCD display panel, and in the process of manufacturing the TFT Array Substrate, photolithography processes are required to manufacture structural layers such as a gate electrode, a source/drain electrode, and a pixel electrode. The complete photolithography process includes Photoresist (PR) coating, exposure, development, etching, photoresist stripping, etc. In order to save the mask and reduce the number of processes, a method for simultaneously removing a portion of the electrode layer on the photoresist to be stripped by photoresist stripping to realize patterning of the electrode layer has been proposed, and is often referred to as PR Lift-off method by those skilled in the art.
In the conventional PR Lift-off method, the photoresist is stripped at a low speed and with a high difficulty, regardless of whether the positive photoresist (the portion irradiated with light is removed by the developer) or the negative photoresist (the portion not irradiated with light is removed by the developer), so that the efficiency of patterning the electrode layer is low. As shown in fig. 1, for a negative photoresist, the photoresist block 100 to be stripped is in an inverted trapezoid shape (the photoresist block 100 to be stripped is located between the substrate 300 and the electrode block 500 to be removed), an included angle between a waist of the inverted trapezoid and a vertical direction, which is also called an Undercut angle (Undercut), is small, and a permeation speed of a stripping solution into the photoresist block 100 is slow, so that a stripping rate of the photoresist is slow; as shown in fig. 2, for positive photoresist, the photoresist block 100 ' to be stripped (the photoresist block 100 ' to be stripped is located between the buffer layer 200 and the electrode block 500 ' to be removed, and the buffer layer 200 is located on the substrate 300 ') is trapezoidal, the included angle of the waist of the trapezoid relative to the vertical direction is also small, the permeation speed of stripping liquid into the photoresist block 100 ' is slow, and thus the photoresist stripping rate is slow; as shown in fig. 3, there is a PR nano texturing technique (both positive and negative photoresists) to strip the photoresist block 100 "(the photoresist block 100" is on the substrate 300 "), but the PR nano texturing technique is difficult to implement, not only has a slow stripping rate, but also causes contamination to the chamber where the related process is located.
Disclosure of Invention
The invention aims to provide a method for realizing electrode layer patterning through photoresist stripping, which can improve the photoresist stripping rate and accelerate the efficiency of realizing electrode layer patterning.
In order to achieve the above object, the present invention provides a method for patterning an electrode layer by photoresist stripping, comprising the steps of:
step S1, continuously coating at least one lower layer photoresist and one upper layer photoresist on the substrate to form a photoresist layer;
the cross-linking performance of the lower layer light resistance is different from that of the upper layer light resistance;
step S2, exposing and developing the photoresist layer by using a half-tone photomask to form a first photoresist area, a second photoresist area and a non-photoresist area;
step S3, removing the photoresist layer in the second photoresist region and retaining the photoresist layer in the first photoresist region;
step S4, depositing an electrode layer on the substrate and the upper photoresist in the first photoresist region;
and step S5, stripping the upper layer photoresist and the lower layer photoresist in the first photoresist region by using a stripping liquid, and simultaneously removing part of the electrode layer deposited on the upper layer photoresist in the first photoresist region to obtain a patterned electrode layer.
Further comprising between the step S2 and the step S3:
and step S23, etching the substrate through the non-photoresistance areas to form through holes.
The deposited electrode layer of step S4 also fills the via hole.
The base plate comprises a substrate base plate and a buffer layer arranged on the substrate base plate, and the through hole penetrates through the buffer layer.
Optionally, the lower layer photoresist and the upper layer photoresist are negative photoresists, and after the exposure and development in the step S2, the lower layer photoresist and the upper layer photoresist in the first photoresist region are both in an inverted trapezoid shape.
The light sensitivity of the upper layer light resistance is higher than that of the lower layer light resistance, so that the cross-linking performance of the upper layer light resistance is higher than that of the lower layer light resistance after exposure.
Or the light sensitivity of the upper layer light resistance is lower than that of the lower layer light resistance, so that the cross-linking performance of the upper layer light resistance is lower than that of the lower layer light resistance after exposure.
The components of the upper layer light resistance and the lower layer light resistance contain photosensitizer, and the content of the photosensitizer in the upper layer light resistance is different from that of the photosensitizer in the lower layer light resistance or the type of the photosensitizer in the upper layer light resistance is different from that of the photosensitizer in the lower layer light resistance.
The components of the upper layer light resistance and the lower layer light resistance also contain a solvent and phenolic resin.
Optionally, the lower layer photoresist and the upper layer photoresist are both positive photoresists, and after the exposure and development in step S2, the lower layer photoresist and the upper layer photoresist in the first photoresist region are both trapezoidal.
The invention has the beneficial effects that: the invention provides a method for realizing electrode layer patterning by light resistance stripping, which comprises the steps of continuously coating a lower light resistance layer and an upper light resistance layer with different cross-linking performances on a substrate to form a light resistance layer, then using a half-tone photomask to expose and develop the light resistance layer, removing the light resistance layer in a second light resistance area and reserving the light resistance layer in a first light resistance area, then depositing an electrode layer, finally utilizing a stripping liquid to strip the upper light resistance layer and the lower light resistance layer in the first light resistance area, and simultaneously removing part of the electrode layer deposited on the upper light resistance layer in the first light resistance area to obtain a patterned electrode layer. Compared with the conventional PR Lift-off method, namely a method for realizing electrode layer patterning by stripping a single-layer photoresist, the method has the advantages that a larger undercut angle can be formed by the lower-layer photoresist and the upper-layer photoresist which have different cross-linking properties, namely, a larger gap can be provided for a stripping liquid to permeate, so that the photoresist stripping rate is accelerated, and if the cross-linking property of the upper-layer photoresist is higher than that of the lower-layer photoresist, the cross-linking degree of the lower-layer photoresist is lower and the stripping is easier, the upper-layer photoresist is stripped along the strip while the lower-layer photoresist is stripped, the photoresist stripping rate is further accelerated, and the efficiency for realizing the electrode layer patterning is accelerated; if the cross-linking performance of the upper layer of light resistance is lower than that of the lower layer of light resistance, the cross-linking degree of the upper layer of light resistance is lower, stripping is easier, after the upper layer of light resistance is stripped, the lower layer of light resistance is completely exposed, a larger area is provided for stripping liquid to permeate, the light resistance stripping rate can be increased, and the efficiency of realizing electrode layer patterning is increased.
Drawings
For a better understanding of the nature and technical aspects of the present invention, reference should be made to the following detailed description of the invention, taken in conjunction with the accompanying drawings, which are provided for purposes of illustration and description and are not intended to limit the invention.
In the drawings, there is shown in the drawings,
FIG. 1 is a schematic diagram of a first prior art PR Lift-off process;
FIG. 2 is a schematic diagram of a second prior art PR Lift-off process;
FIG. 3 is a schematic diagram of a third prior art PR Lift-off process;
FIG. 4 is a flow chart of a method of patterning an electrode layer by photoresist stripping according to the present invention;
FIG. 5 is a diagram illustrating step S1 of the method for patterning an electrode layer by photoresist stripping according to the first embodiment of the present invention;
FIG. 6 is a diagram illustrating step S2 of the method for patterning an electrode layer by photoresist stripping according to the first embodiment of the present invention;
FIG. 7 is a diagram illustrating steps S23 and S3 of the method for patterning an electrode layer by photoresist stripping according to the first embodiment of the present invention;
FIG. 8 is a diagram illustrating step S34 of the method for patterning an electrode layer by photoresist stripping according to the first embodiment of the present invention;
FIG. 9 is a diagram illustrating step S4 of the method for patterning an electrode layer by photoresist stripping according to the first embodiment of the present invention;
FIG. 10 is a diagram illustrating step S1 of the method for patterning an electrode layer by photoresist stripping according to the second embodiment of the present invention;
FIG. 11 is a diagram illustrating step S2 of the method for patterning an electrode layer by photoresist stripping according to the second embodiment of the present invention;
FIG. 12 is a diagram illustrating steps S23 and S3 of a method for patterning an electrode layer by photoresist stripping according to a second embodiment of the present invention;
FIG. 13 is a diagram illustrating step S34 of the method for patterning an electrode layer by photoresist stripping according to the second embodiment of the present invention;
FIG. 14 is a diagram illustrating step S4 of the method for patterning an electrode layer by photoresist stripping according to the second embodiment of the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
The invention provides a method for realizing electrode layer patterning through photoresist stripping. Referring to fig. 4 and fig. 5 to 9, a first embodiment of the method for patterning an electrode layer by photoresist stripping according to the present invention includes the following steps:
step S1, as shown in fig. 5, at least one lower photoresist 21 and one upper photoresist 22 are coated on the substrate 1 to form a photoresist layer 2, and the cross-linking performance of the lower photoresist 21 and the upper photoresist 22 is different.
Specifically, the method comprises the following steps:
the substrate 1 includes a substrate 11 (not limited to a glass substrate) and a buffer layer 12 provided on the substrate 11.
In the first embodiment, the lower layer photoresist 21 and the upper layer photoresist 22 are negative photoresists, and the photosensitivity of the upper layer photoresist 22 is higher than that of the lower layer photoresist 21, so that after the subsequent steps of exposure, the crosslinking performance of the upper layer photoresist 22 is higher than that of the lower layer photoresist 21.
Further, the main components of the upper layer photoresist 22 and the lower layer photoresist 21 are a solvent (which makes the photoresist have solubility and coatability), a phenolic resin (which makes the photoresist generate polymerization reaction), and a photosensitizer (such as diazoquinone, etc.), but the content of the photosensitizer in the upper layer photoresist 22 is different from the content of the photosensitizer in the lower layer photoresist 21 or the kind of the photosensitizer in the upper layer photoresist 22 is different from the kind of the photosensitizer in the lower layer photoresist 21, so that the photosensitivity of the upper layer photoresist 22 is different from the photosensitivity of the lower layer photoresist 21.
In step S2, as shown in fig. 6, the photoresist layer 2 is exposed and developed by using a Half tone (Half tone) mask, so as to form a first photoresist region a, a second photoresist region B, and a non-photoresist region D.
The film thickness of the photoresist layer 2 in the first photoresist region A is kept unchanged, the film thickness of the photoresist layer 2 in the second photoresist region B is smaller than that of the photoresist layer 2 in the first photoresist region A, and no photoresist is arranged in the photoresist-free region D.
In the first embodiment, since the lower layer photoresist 21 and the upper layer photoresist 22 are negative photoresists, after the exposure and development in the step S2, the lower layer photoresist 21 and the upper layer photoresist 22 in the first photoresist region a are both in an inverted trapezoid shape. Compared with a single-layer photoresist used by the conventional PR Lift-off method, the PR Lift-off method adopts the lamination of the lower photoresist 21 and the upper photoresist 22, and can form a larger undercut angle after exposure and development; since the photosensitivity of the upper layer photoresist 22 is higher than that of the lower layer photoresist 21, and the light flux received by the lower layer photoresist 21 is smaller than that received by the upper layer photoresist 22, after the exposure in step S2, the crosslinking performance of the upper layer photoresist 22 is higher than that of the lower layer photoresist 21.
Step S23, as shown in fig. 7, the substrate 1 is etched through the non-photoresist region D to form a via hole V penetrating the buffer layer 12.
Step S3, comparing fig. 6 and fig. 7, removing the photoresist layer 2 in the second photoresist region B, and retaining the photoresist layer 2 in the first photoresist region a;
specifically, this step S3 employs a photoresist ashing (Ash) process to remove the photoresist layer 2 in the second photoresist region B while reducing the film thickness of the upper layer photoresist 22 in the photoresist layer 2 in the first photoresist region a.
Step S4, as shown in fig. 8, depositing an electrode layer 3 on the substrate 1 and the upper photoresist 22 in the first photoresist region a, where the electrode layer 3 fills the via hole V.
Specifically, the electrode layer 3 may be, but is not limited to, a pixel electrode, and the material thereof may be, but is not limited to, an Indium Tin Oxide (ITO) thin film.
In step S5, as shown in fig. 9, the upper layer resist 22 and the lower layer resist 21 in the first resist region a are stripped by a stripping liquid.
When the upper layer photoresist 22 and the lower layer photoresist 21 in the first photoresist region a are stripped, part of the electrode layer 3 deposited on the upper layer photoresist 22 in the first photoresist region a is removed to obtain the patterned electrode layer 3, so that the special etching process for the electrode layer 3 to realize patterning can be omitted, and a photomask is saved.
In the first embodiment, on one hand, because the lower layer photoresist 21 and the upper layer photoresist 22 are laminated, a larger undercut angle can be formed after exposure and development, so that a larger gap can be provided for a stripping solution to penetrate, and the photoresist stripping rate is accelerated; on the other hand, the cross-linking performance of the upper layer photoresist 22 is higher than that of the lower layer photoresist 21, and the light flux received by the lower layer photoresist 21 is smaller than that received by the upper layer photoresist 22, so that the cross-linking degree of the lower layer photoresist 21 is lower, stripping is easier, the upper layer photoresist 22 is stripped along the strip while the lower layer photoresist 21 is stripped, the photoresist stripping rate is further accelerated, and therefore the efficiency of realizing electrode layer patterning can be accelerated.
In the first embodiment, only the lower layer photoresist 21 and the upper layer photoresist 22 are negative photoresists, and the cross-linking performance of the upper layer photoresist 22 is higher than that of the lower layer photoresist 21, for example, the lower layer photoresist 21 and the upper layer photoresist 22 are positive photoresists, and the cross-linking performance of the upper layer photoresist 22 is higher than that of the lower layer photoresist 21 by adjusting the components of the lower layer photoresist 21 and the upper layer photoresist 22, so that after the exposure and development in the step S2, the lower layer photoresist 21 and the upper layer photoresist 22 in the first photoresist region a are both trapezoidal, and still a larger undercut angle can be formed, so that a larger gap can be provided for the permeation of stripping solution, the photoresist stripping rate is increased, and the cross-linking degree of the lower layer photoresist 21 is lower, so that the stripping is easier, the upper layer photoresist 22 is stripped along the strip while the lower layer photoresist 21 is stripped, and the photoresist stripping rate is further increased, the efficiency of implementing the patterning of the electrode layer can be accelerated. Of course, more layers of photoresists with different cross-linking properties can be arranged, and the effect of accelerating the stripping rate of the photoresists can also be achieved.
Referring to fig. 4 and fig. 10 to 14, a second embodiment of the method for patterning an electrode layer by photoresist stripping according to the present invention includes the following steps:
step S1, as shown in fig. 10, at least one lower photoresist 21 and one upper photoresist 22 are coated on the substrate 1 to form a photoresist layer 2, and the cross-linking performance of the lower photoresist 21 and the upper photoresist 22 is different.
Specifically, the method comprises the following steps:
the substrate 1 includes a substrate 11 (not limited to a glass substrate) and a buffer layer 12 provided on the substrate 11.
In the second embodiment, the lower layer photoresist 21 and the upper layer photoresist 22 are both negative photoresists, and the photosensitivity of the upper layer photoresist 22 is lower than that of the lower layer photoresist 21, so that after the subsequent steps of exposure, the crosslinking performance of the upper layer photoresist 22 is lower than that of the lower layer photoresist 21.
Further, the main components of the upper layer photoresist 22 and the lower layer photoresist 21 are a solvent (which makes the photoresist have solubility and coatability), a phenolic resin (which makes the photoresist generate polymerization reaction), and a photosensitizer (such as diazoquinone, etc.), but the content of the photosensitizer in the upper layer photoresist 22 is different from the content of the photosensitizer in the lower layer photoresist 21 or the kind of the photosensitizer in the upper layer photoresist 22 is different from the kind of the photosensitizer in the lower layer photoresist 21, so that the photosensitivity of the upper layer photoresist 22 is different from the photosensitivity of the lower layer photoresist 21.
In step S2, as shown in fig. 11, the photoresist layer 2 is exposed and developed using a halftone mask, so as to form a first photoresist region a, a second photoresist region B, and a non-photoresist region D.
The film thickness of the photoresist layer 2 in the first photoresist region A is kept unchanged, the film thickness of the photoresist layer 2 in the second photoresist region B is smaller than that of the photoresist layer 2 in the first photoresist region A, and no photoresist is arranged in the photoresist-free region D.
In the second embodiment, since the lower layer photoresist 21 and the upper layer photoresist 22 are both negative photoresists, after the exposure and development in the step S2, the lower layer photoresist 21 and the upper layer photoresist 22 in the first photoresist region a are both in an inverted trapezoid shape. Compared with a single-layer photoresist used by the conventional PR Lift-off method, the PR Lift-off method adopts the lamination of the lower photoresist 21 and the upper photoresist 22, and can form a larger undercut angle after exposure and development; since the photosensitivity of the upper layer photoresist 22 is lower than that of the lower layer photoresist 21, the cross-linking performance of the upper layer photoresist 22 is lower than that of the lower layer photoresist 21 after the exposure of step S2.
Step S23, as shown in fig. 12, the substrate 1 is etched through the non-photoresist region D to form a via hole V penetrating the buffer layer 12.
Step S3, comparing fig. 11 and fig. 12, removing the photoresist layer 2 in the second photoresist region B, and retaining the photoresist layer 2 in the first photoresist region a;
specifically, the step S3 employs a photoresist ashing process to remove the photoresist layer 2 in the second photoresist region B, while reducing the film thickness of the upper photoresist 22 in the photoresist layer 2 in the first photoresist region a.
Step S4, as shown in fig. 13, depositing an electrode layer 3 on the substrate 1 and the upper photoresist 22 in the first photoresist region a, where the electrode layer 3 fills the via hole V.
Specifically, the electrode layer 3 may be, but is not limited to, a pixel electrode, and the material thereof may be, but is not limited to, an indium tin oxide thin film.
In step S5, as shown in fig. 14, the upper layer resist 22 and the lower layer resist 21 in the first resist region a are stripped by a stripping liquid.
When the upper layer photoresist 22 and the lower layer photoresist 21 in the first photoresist region a are stripped, part of the electrode layer 3 deposited on the upper layer photoresist 22 in the first photoresist region a is removed to obtain the patterned electrode layer 3, so that the special etching process for the electrode layer 3 to realize patterning can be omitted, and a photomask is saved.
In the second embodiment, on one hand, because the lower layer photoresist 21 and the upper layer photoresist 22 are laminated, a larger undercut angle can be formed after exposure and development, so that a larger gap can be provided for a stripping solution to penetrate, and the photoresist stripping rate is accelerated; on the other hand, the cross-linking performance of the upper layer photoresist 22 is lower than that of the lower layer photoresist 21, so that the cross-linking degree of the upper layer photoresist 22 is lower, and stripping is easier, and after the upper layer photoresist 21 is stripped, the lower layer photoresist 22 is completely exposed, and has a larger area for a stripping solution to permeate, so that the photoresist stripping rate can be further accelerated, and the efficiency of realizing electrode layer patterning can be accelerated.
In the second embodiment, only the lower layer photoresist 21 and the upper layer photoresist 22 are negative photoresists, and the cross-linking performance of the upper layer photoresist 22 is lower than that of the lower layer photoresist 21, but it may also be configured that the lower layer photoresist 21 and the upper layer photoresist 22 are positive photoresists, and the cross-linking performance of the upper layer photoresist 22 is lower than that of the lower layer photoresist 21 by adjusting the components of the lower layer photoresist 21 and the upper layer photoresist 22, so that after the exposure and development in step S2, the lower layer photoresist 21 and the upper layer photoresist 22 in the first photoresist region a are both trapezoidal, and still can form a larger undercut angle, so as to provide a larger gap for the permeation of the stripping solution, and accelerate the stripping rate of the photoresist, and the cross-linking degree of the upper layer photoresist 22 is lower, so that the stripping is easier, after the upper layer photoresist 21 is stripped, the lower layer photoresist 22 is completely exposed, and a larger area for the permeation of the stripping solution is provided, the photoresist stripping rate can be further increased, and thus the efficiency of realizing the patterning of the electrode layer can be increased. Of course, more layers of photoresists with different cross-linking properties can be arranged, and the effect of accelerating the stripping rate of the photoresists can also be achieved.
In summary, the method for patterning an electrode layer by photoresist stripping of the present invention includes continuously coating a lower photoresist and an upper photoresist on a substrate to form a photoresist layer, exposing and developing the photoresist layer using a halftone mask, removing the photoresist layer in a second photoresist region while retaining the photoresist layer in a first photoresist region, depositing an electrode layer, stripping the upper photoresist and the lower photoresist in the first photoresist region using a stripping solution, and removing a portion of the electrode layer deposited on the upper photoresist in the first photoresist region to obtain a patterned electrode layer. Compared with the conventional PRLift-off method, namely a method for realizing electrode layer patterning by stripping single-layer light resistance, the method has the advantages that the lower-layer light resistance with different cross-linking properties and the upper-layer light resistance are arranged to form a larger undercut angle, namely, a larger gap can be provided for stripping liquid to permeate, so that the light resistance stripping rate is accelerated, and if the cross-linking property of the upper-layer light resistance is higher than that of the lower-layer light resistance, the cross-linking degree of the lower-layer light resistance is lower, the stripping is easier, the upper-layer light resistance is stripped along the strip while the lower-layer light resistance is stripped, the light resistance stripping rate is further accelerated, and the efficiency for realizing the electrode layer patterning is; if the cross-linking performance of the upper layer of light resistance is lower than that of the lower layer of light resistance, the cross-linking degree of the upper layer of light resistance is lower, stripping is easier, after the upper layer of light resistance is stripped, the lower layer of light resistance is completely exposed, a larger area is provided for stripping liquid to permeate, the light resistance stripping rate can be increased, and the efficiency of realizing electrode layer patterning is increased.
As described above, it will be apparent to those skilled in the art that other various changes and modifications may be made based on the technical solution and concept of the present invention, and all such changes and modifications should fall within the scope of the claims of the present invention.
Claims (8)
1. A method for realizing electrode layer patterning through photoresist stripping is characterized by comprising the following steps:
step S1, at least one lower layer photoresist (21) and one upper layer photoresist (22) are coated on the substrate (1) continuously to form a photoresist layer (2);
the cross-linking performance of the lower layer light resistance (21) is different from that of the upper layer light resistance (22);
step S2, exposing and developing the photoresist layer (2) by using a half-tone mask to form a first photoresist area (A), a second photoresist area (B) and a non-photoresist area (D);
step S3, removing the photoresist layer (2) in the second photoresist region (B), and retaining the photoresist layer (2) in the first photoresist region (a); step S4, depositing an electrode layer (3) on the substrate (1) and the upper layer photoresist (22) in the first photoresist region (A);
step S5, stripping the upper layer photoresist (22) and the lower layer photoresist (21) in the first photoresist region (A) by using a stripping liquid, and simultaneously removing part of the electrode layer (3) deposited on the upper layer photoresist (22) in the first photoresist region (A) to obtain a patterned electrode layer (3);
the components of the upper layer light resistance (22) and the lower layer light resistance (21) both contain a photosensitizer, and the content of the photosensitizer in the upper layer light resistance (22) is different from that in the lower layer light resistance (21) or the type of the photosensitizer in the upper layer light resistance (22) is different from that in the lower layer light resistance (21).
2. The method for patterning an electrode layer by photoresist stripping as claimed in claim 1, further comprising between the steps S2 and S3:
step S23, etching the substrate (1) through the non-photoresistance area (D) to form a via hole (V);
the deposited electrode layer (3) of step S4 also fills the via hole (V).
3. The method for patterning an electrode layer by photoresist stripping as claimed in claim 2, wherein the base plate (1) comprises a substrate base plate (11) and a buffer layer (12) provided on the substrate base plate (11), the via hole (V) penetrating through the buffer layer (12).
4. The method for patterning an electrode layer by photoresist stripping as claimed in claim 1, wherein the lower layer photoresist (21) and the upper layer photoresist (22) are negative photoresist, and after the exposure and development of step S2, the lower layer photoresist (21) and the upper layer photoresist (22) in the first photoresist region (a) are both in inverse trapezoid shape.
5. The method for patterning an electrode layer by photoresist stripping as claimed in claim 4, wherein the photosensitivity of the upper layer photoresist (22) is higher than that of the lower layer photoresist (21), so that the crosslinking performance of the upper layer photoresist (22) after exposure is higher than that of the lower layer photoresist (21).
6. The method for patterning an electrode layer by photoresist stripping as claimed in claim 4, wherein the photosensitivity of the upper layer photoresist (22) is lower than that of the lower layer photoresist (21), so that the crosslinking performance of the upper layer photoresist (22) after exposure is lower than that of the lower layer photoresist (21).
7. The method for patterning an electrode layer by photoresist stripping as claimed in claim 1, wherein the composition of the upper layer photoresist (22) and the lower layer photoresist (21) further contains a solvent and a phenolic resin.
8. The method for patterning an electrode layer by photoresist stripping as claimed in claim 1, wherein the lower layer photoresist (21) and the upper layer photoresist (22) are both positive photoresists, and after the exposure and development of step S2, the lower layer photoresist (21) and the upper layer photoresist (22) in the first photoresist region (a) are both trapezoidal.
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| CN110854067B (en) * | 2019-10-22 | 2022-05-03 | Tcl华星光电技术有限公司 | Manufacturing method of display panel |
| CN111628116B (en) * | 2020-06-04 | 2023-06-27 | 南京华易泰电子科技有限公司 | Method for solving problem that photoresist is not easy to peel after RGB evaporation in OLED (organic light emitting diode) manufacturing process |
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| JP5370330B2 (en) * | 2010-10-01 | 2013-12-18 | 住友金属鉱山株式会社 | Manufacturing method of semiconductor device mounting substrate |
| TWI515910B (en) * | 2011-12-22 | 2016-01-01 | 群創光電股份有限公司 | Thin film transistor subtrate and manufacturing method thereof, display |
| CN103176354B (en) * | 2013-03-20 | 2016-08-17 | 中国科学院上海微系统与信息技术研究所 | A kind of electron beam exposure graphic method in dielectric substrate |
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