CN111628116B - Method for solving problem that photoresist is not easy to peel after RGB evaporation in OLED (organic light emitting diode) manufacturing process - Google Patents
Method for solving problem that photoresist is not easy to peel after RGB evaporation in OLED (organic light emitting diode) manufacturing process Download PDFInfo
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Abstract
The invention relates to the technical field of display devices, in particular to a method for solving the problem that photoresist is not easy to peel after RGB vapor deposition in an OLED (organic light emitting diode) process, which comprises the following steps: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2; and a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1; and a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2; fourth step: dry etching is adjusted, and the whole substrate after development is placed in a cavity basin subjected to dry etching; the invention has the advantages of enabling the photoresist stripping liquid to be in good contact with the photoresist and shortening the time consumed by the photoresist removing process, and solves the problems that the photoresist stripping liquid is easy to be in poor contact with the photoresist after the evaporation of the existing display device, thereby affecting the photoresist removing, and the phenomenon can cause the excessively long time consumed by the photoresist removing process in the OLED yellow light process, even lead the photoresist to be incapable of being removed smoothly, thereby affecting the subsequent process.
Description
Technical Field
The invention relates to the technical field of display devices, in particular to a method for solving the problem that photoresist is not easy to peel after RGB vapor deposition in an OLED (organic light emitting diode) process.
Background
RGB color mode is a color standard in industry, which is to obtain various colors by changing three color channels of red (R), green (G) and blue (B) and overlapping them with each other, and RGB is a color representing three channels of red, green and blue, and this standard includes almost all colors perceived by human eyesight, and is one of the most widely used color systems.
After evaporation, a photoresist layer is required to be carried out, and as the surface of the photoresist layer is uniformly covered with a 200-400nm OLED functional layer, photoresist stripping liquid cannot be well contacted with photoresist, so that photoresist removal is affected, the phenomenon can cause overlong time consumed by a photoresist removal process in the OLED yellow light process, even the photoresist cannot be smoothly removed, the subsequent process is affected, and finally, the OLED display device generates pixel defects to form black spots.
Disclosure of Invention
The invention aims to provide a method for solving the problem that photoresist is not easy to strip after RGB vapor deposition in an OLED (organic light emitting diode) process, which has the advantages of enabling photoresist stripping liquid to be in good contact with the photoresist and shortening the time consumed by a photoresist removing process, and solves the problem that the photoresist stripping liquid is easy to be in contact with the photoresist after vapor deposition of the existing display device, so that the photoresist removing is influenced, and the phenomenon can cause the excessively long time consumed by the photoresist removing process in the OLED yellow light process, even the photoresist cannot be removed smoothly, so that the subsequent process is influenced.
In order to achieve the above purpose, the present invention provides the following technical solutions: a method for solving problem of difficult stripping of photoresist after evaporation of RGB in OLED process comprises the following steps,
the first step: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2;
and a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1;
and a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2;
fourth step: dry etching is adjusted, the whole substrate after development is placed in a cavity basin subjected to dry etching, and an upper electrode and a lower electrode are arranged in the cavity basin;
fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light;
sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel defining region to form a cone-like structure.
Preferably, in the first step, the photosensitive wavelength bands of the first photoresist layer PR1 and the second photoresist layer PR2 are the same, and the developing solutions are the same.
Preferably, in the first step, the first photoresist layer PR1 is denser to resist dry etching, and the second photoresist layer PR2 is opposite.
Preferably, in the second step, the exposure width a is greater than the ITO anode region.
Preferably, in the third step, photoresist development is performed on the first photoresist layer PR1 and the second photoresist layer PR2 by using a photoresist stripping solution.
Preferably, in the fourth step, the substrate is placed with a normal line at a certain angle θ with respect to the upper and lower normal lines, and the substrate is rotated at a certain rate with the center of the substrate as an axis.
Preferably, in the fourth step, the second photoresist layer PR2 is formed to have a taper shape θ with respect to the normal line of the substrate.
Preferably, in the fifth step, when the OLED functional layers are evaporated, the OLED functional layers form a discontinuous film at the edge regions of the photoresist openings due to the special opening shapes thereof.
Preferably, in the sixth step, when the process of removing the second photoresist layer PR2 is performed by using the stripping solution, the stripping solution may smoothly contact the second photoresist layer PR2 at the uncovered cross section of the OLED functional layer, thereby achieving the purpose of removing the photoresist.
Compared with the prior art, the invention has the following beneficial effects:
the invention has the advantages of enabling the photoresist stripping liquid to be in good contact with the photoresist and shortening the time consumed by the photoresist removing process, and solves the problems that the photoresist stripping liquid is easy to be in poor contact with the photoresist after the evaporation of the existing display device, thereby affecting the photoresist removing, and the phenomenon can cause the excessively long time consumed by the photoresist removing process in the OLED yellow light process, even lead the photoresist to be incapable of being removed smoothly, thereby affecting the subsequent process.
Drawings
FIG. 1 is a schematic illustration of a photoresist layer coating according to the present invention;
FIG. 2 is an exposure schematic diagram of the present invention;
FIG. 3 is a schematic diagram of photoresist development according to the present invention;
FIG. 4 is a schematic diagram of a dry etching process according to the present invention;
FIG. 5 is a schematic diagram showing photoresist removal according to the present invention;
FIG. 6 is a schematic diagram showing a photoresist removal process according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
A method for solving problem of difficult stripping of photoresist after evaporation of RGB in OLED process comprises the following steps,
the first step: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2;
and a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1;
and a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2;
fourth step: dry etching is adjusted, the whole substrate after development is placed in a cavity basin subjected to dry etching, and an upper electrode and a lower electrode are arranged in the cavity basin;
fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light;
sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel defining region to form a cone-like structure.
Embodiment one:
a method for solving problem of difficult stripping of photoresist after evaporation of RGB in OLED process comprises the following steps,
the first step: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2; the photosensitive wave bands of the first photoresist layer PR1 and the second photoresist layer PR2 are the same, and the developing solutions are the same.
And a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1;
and a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2;
fourth step: dry etching is adjusted, the whole substrate after development is placed in a cavity basin subjected to dry etching, and an upper electrode and a lower electrode are arranged in the cavity basin;
fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light;
sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel defining region to form a cone-like structure.
Embodiment two:
a method for solving problem of difficult stripping of photoresist after evaporation of RGB in OLED process comprises the following steps,
the first step: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2; the photosensitive wave bands of the first photoresist layer PR1 and the second photoresist layer PR2 are the same, the developing solution is the same, the first photoresist layer PR1 is more compact and can resist dry etching, and the second photoresist layer PR2 is opposite.
And a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1;
and a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2;
fourth step: dry etching is adjusted, the whole substrate after development is placed in a cavity basin subjected to dry etching, and an upper electrode and a lower electrode are arranged in the cavity basin;
fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light;
sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel defining region to form a cone-like structure.
Embodiment III:
a method for solving problem of difficult stripping of photoresist after evaporation of RGB in OLED process comprises the following steps,
the first step: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2; the photosensitive wave bands of the first photoresist layer PR1 and the second photoresist layer PR2 are the same, the developing solution is the same, the first photoresist layer PR1 is more compact and can resist dry etching, and the second photoresist layer PR2 is opposite.
And a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1; the exposure width A is larger than the ITO anode region.
And a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2;
fourth step: dry etching is adjusted, the whole substrate after development is placed in a cavity basin subjected to dry etching, and an upper electrode and a lower electrode are arranged in the cavity basin;
fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light;
sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel defining region to form a cone-like structure.
Embodiment four:
a method for solving problem of difficult stripping of photoresist after evaporation of RGB in OLED process comprises the following steps,
the first step: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2; the photosensitive wave bands of the first photoresist layer PR1 and the second photoresist layer PR2 are the same, the developing solution is the same, the first photoresist layer PR1 is more compact and can resist dry etching, and the second photoresist layer PR2 is opposite.
And a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1; the exposure width A is larger than the ITO anode region.
And a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2; the photoresist stripping solution is used for photoresist development of the first photoresist layer PR1 and the second photoresist layer PR 2.
Fourth step: dry etching is adjusted, the whole substrate after development is placed in a cavity basin subjected to dry etching, and an upper electrode and a lower electrode are arranged in the cavity basin;
fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light;
sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel defining region to form a cone-like structure.
Fifth embodiment:
a method for solving problem of difficult stripping of photoresist after evaporation of RGB in OLED process comprises the following steps,
the first step: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2; the photosensitive wave bands of the first photoresist layer PR1 and the second photoresist layer PR2 are the same, the developing solution is the same, the first photoresist layer PR1 is more compact and can resist dry etching, and the second photoresist layer PR2 is opposite.
And a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1; the exposure width A is larger than the ITO anode region.
And a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2; the photoresist stripping solution is used for photoresist development of the first photoresist layer PR1 and the second photoresist layer PR 2.
Fourth step: dry etching is adjusted, the whole substrate after development is placed in a cavity basin subjected to dry etching, and an upper electrode and a lower electrode are arranged in the cavity basin; in the fourth step, the substrate is placed with a normal line at a certain angle θ with respect to the upper and lower normal lines, and rotated at a certain rate about the substrate center, so that the second photoresist layer PR2 is tapered with a angle θ with respect to the substrate normal line.
Fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light;
sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel defining region to form a cone-like structure.
Example six:
a method for solving problem of difficult stripping of photoresist after evaporation of RGB in OLED process comprises the following steps,
the first step: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2; the photosensitive wave bands of the first photoresist layer PR1 and the second photoresist layer PR2 are the same, the developing solution is the same, the first photoresist layer PR1 is more compact and can resist dry etching, and the second photoresist layer PR2 is opposite.
And a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1; the exposure width A is larger than the ITO anode region.
And a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2; the photoresist stripping solution is used for photoresist development of the first photoresist layer PR1 and the second photoresist layer PR 2.
Fourth step: dry etching is adjusted, the whole substrate after development is placed in a cavity basin subjected to dry etching, and an upper electrode and a lower electrode are arranged in the cavity basin; in the fourth step, the substrate is placed with a normal line and an upper normal line and a lower normal line at a certain angle theta, and the substrate is rotated at a certain speed by taking the center of the substrate as an axis.
Fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light; when the functional layers of the OLED are evaporated, the functional layers of the OLED form discontinuous films at the edge areas of the openings of the photoresist due to the special opening shapes of the functional layers.
Sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel defining region to form a cone-like structure.
Embodiment seven:
a method for solving problem of difficult stripping of photoresist after evaporation of RGB in OLED process comprises the following steps,
the first step: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2; the photosensitive wave bands of the first photoresist layer PR1 and the second photoresist layer PR2 are the same, the developing solution is the same, the first photoresist layer PR1 is more compact and can resist dry etching, and the second photoresist layer PR2 is opposite.
And a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1; the exposure width A is larger than the ITO anode region.
And a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2; the photoresist stripping solution is used for photoresist development of the first photoresist layer PR1 and the second photoresist layer PR 2.
Fourth step: dry etching is adjusted, the whole substrate after development is placed in a cavity basin subjected to dry etching, and an upper electrode and a lower electrode are arranged in the cavity basin; in the fourth step, the substrate is placed with a normal line at a certain angle θ with respect to the upper and lower normal lines, and rotated at a certain rate about the substrate center, so that the second photoresist layer PR2 is tapered with a angle θ with respect to the substrate normal line.
Fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light; when the functional layers of the OLED are evaporated, the functional layers of the OLED form discontinuous films at the edge areas of the openings of the photoresist due to the special opening shapes of the functional layers.
Sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel defining region to form a cone-like structure.
Example eight:
a method for solving problem of difficult stripping of photoresist after evaporation of RGB in OLED process comprises the following steps,
the first step: photoresist coating, namely coating a first photoresist layer PR1 and a second photoresist layer PR2; the photosensitive wave bands of the first photoresist layer PR1 and the second photoresist layer PR2 are the same, the developing solution is the same, the first photoresist layer PR1 is more compact and can resist dry etching, and the second photoresist layer PR2 is opposite.
And a second step of: UV exposure, namely performing exposure treatment on the first photoresist layer PR 1; the exposure width A is larger than the ITO anode region.
And a third step of: developing the photoresist, namely developing the first photoresist layer PR1 and the second photoresist layer PR2; the photoresist stripping solution is used for photoresist development of the first photoresist layer PR1 and the second photoresist layer PR 2.
Fourth step: dry etching is adjusted, the whole substrate after development is placed in a cavity basin subjected to dry etching, and an upper electrode and a lower electrode are arranged in the cavity basin; in the fourth step, the substrate is placed with a normal line at a certain angle θ with respect to the upper and lower normal lines, and rotated at a certain rate about the substrate center, so that the second photoresist layer PR2 is tapered with a angle θ with respect to the substrate normal line.
Fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light; when the functional layers of the OLED are evaporated, the functional layers of the OLED form discontinuous films at the edge areas of the openings of the photoresist due to the special opening shapes of the functional layers.
Sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel point definition area and forming a cone-like structure; when the process of removing the second photoresist layer PR2 is performed by using the stripping liquid, the stripping liquid can smoothly contact the second photoresist layer PR2 at the uncovered section of the OLED functional layer, thereby achieving the purpose of removing the photoresist.
The specific steps of the method are as follows,
the method comprises the steps of coating a first photoresist layer PR1 and a second photoresist layer PR2 on the surface of a substrate, exposing an exposure source through a position A, then developing the photoresist layer, then moving the substrate into a dry etching basin, adjusting the inclination angle of the substrate, enabling a normal line of the substrate to be placed at a certain angle theta with an upper polar normal line and a lower polar normal line, rotating at a certain speed by taking the center of the substrate as an axis, forming holes in a red, green and blue pixel point definition area and forming a cone-like structure, and when each OLED functional layer is evaporated, forming a discontinuous film on the edge area of the photoresist hole by the OLED functional layer due to the special hole shape, wherein when the process of removing the second photoresist layer PR2 is carried out by using a stripping liquid, the stripping liquid can smoothly contact the uncovered cross section of the OLED functional layer with the second photoresist layer PR2, so that the purpose of removing the photoresist is achieved.
The invention has the advantages of enabling the photoresist stripping liquid to be in good contact with the photoresist and shortening the time consumed by the photoresist removing process, and solves the problems that the photoresist stripping liquid is easy to be in poor contact with the photoresist after the evaporation of the existing display device, thereby affecting the photoresist removing, and the phenomenon can cause the excessively long time consumed by the photoresist removing process in the OLED yellow light process, even lead the photoresist to be incapable of being removed smoothly, thereby affecting the subsequent process.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A method for solving the problem that the photoresistance is not easy to peel after evaporation of RGB in OLED manufacturing process is characterized in that: comprises the following steps of the method,
the first step: a photoresist coating a first photoresist layer (PR 1) and a second photoresist layer (PR 2);
and a second step of: UV exposure, the exposure treatment is carried out on the first photoresist layer (PR 1);
and a third step of: developing the photoresist, and performing development treatment on the first photoresist layer (PR 1) and the second photoresist layer (PR 2);
fourth step: dry etching is adjusted, the whole developed substrate is placed in a cavity basin in dry etching, an upper electrode and a lower electrode are arranged in the cavity basin, a substrate placement normal line and an upper normal line and a lower normal line form a certain angle theta, the substrate center is taken as an axis to rotate at a certain speed, and a second photoresist layer (PR 2) forms a cone shape with the substrate normal line theta;
fifth step: evaporating an OLED functional layer, and evaporating an OLED by utilizing evaporating red light, evaporating green light and evaporating blue light;
sixth step: removing the photoresist layer, and forming an opening in the red, green and blue pixel defining region to form a cone-like structure.
2. The method for solving the problem of difficult stripping of the photoresist after evaporation of RGB in the OLED process according to claim 1, wherein the method comprises the following steps: in the first step, the photosensitive wave bands of the first photoresist layer (PR 1) and the second photoresist layer (PR 2) are the same, and the developing solutions are the same.
3. The method for solving the problem of difficult stripping of the photoresist after evaporation of RGB in the OLED process according to claim 1, wherein the method comprises the following steps: in the first step, the first photoresist layer (PR 1) is denser and resists dry etching, and the second photoresist layer (PR 2) is opposite.
4. The method for solving the problem of difficult stripping of the photoresist after evaporation of RGB in the OLED process according to claim 1, wherein the method comprises the following steps: in the second step, the exposure width A is larger than the ITO anode region.
5. The method for solving the problem of difficult stripping of the photoresist after evaporation of RGB in the OLED process according to claim 1, wherein the method comprises the following steps: in the third step, photoresist stripping liquid is used for photoresist development of the first photoresist layer (PR 1) and the second photoresist layer (PR 2).
6. The method for solving the problem of difficult stripping of the photoresist after evaporation of RGB in the OLED process according to claim 1, wherein the method comprises the following steps: in the fifth step, when the functional layers of the OLED are evaporated, the functional layers of the OLED form a discontinuous film at the edge area of the opening of the photoresist due to the special opening shape.
7. The method for solving the problem of difficult stripping of the photoresist after evaporation of RGB in the OLED process according to claim 1, wherein the method comprises the following steps: in the sixth step, when the process of removing the second photoresist layer (PR 2) is performed by using the stripping liquid, the stripping liquid can smoothly contact with the second photoresist layer (PR 2) at the uncovered section of the OLED functional layer, thereby achieving the purpose of removing the photoresist.
8. The method for solving the problem of difficult stripping of the photoresist after evaporation of RGB in the OLED process according to claim 1, wherein the method comprises the following steps: comprises the following steps of the method,
a first photoresist layer (PR 1) and a second photoresist layer (PR 2) are coated on the surface of a substrate, exposure is carried out through the position A, then development treatment is carried out on the photoresist layer, then the substrate is moved into a dry etching basin, the inclination angle of the substrate is adjusted, the normal line of the substrate is placed to form a certain angle theta with the upper and lower polar normals, the substrate is rotated at a certain speed by taking the center of the substrate as an axis, holes are formed in red, green and blue pixel point definition areas, a cone-like structure is formed, when each OLED functional layer is evaporated, the OLED functional layer forms a discontinuous film in the edge area of the hole of the photoresist due to the special hole shape, when a process of removing the second photoresist layer (PR 2) is carried out by using a stripping liquid, the stripping liquid can smoothly contact the second photoresist layer (PR 2) on the uncovered section of the OLED functional layer, and therefore the purpose of removing the photoresist is achieved.
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| TW200539378A (en) * | 2004-05-31 | 2005-12-01 | Univ Nat Central | Processes of semiconductor and bipolar transistor and method of fabricating capacitance structure |
| CN108269736A (en) * | 2018-01-25 | 2018-07-10 | 深圳市华星光电技术有限公司 | The method for realizing electrode layer pattern is removed by photoresist |
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| TW200539378A (en) * | 2004-05-31 | 2005-12-01 | Univ Nat Central | Processes of semiconductor and bipolar transistor and method of fabricating capacitance structure |
| CN108269736A (en) * | 2018-01-25 | 2018-07-10 | 深圳市华星光电技术有限公司 | The method for realizing electrode layer pattern is removed by photoresist |
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